JP2000323516A - Wiring board manufacturing method, wiring board and semiconductor device - Google Patents

Abstract

(57) Abstract: The present invention relates to a method of manufacturing a wiring board, a wiring board, and a semiconductor device, wherein electrodes formed on the surface of the board are connected by internal wiring formed inside the board, and a light weight. It is an object of the present invention to cope with a higher density and a narrower pitch of a semiconductor element while achieving the trend. The surface of a wiring board is covered with an insulating material, a plurality of pads (16, 17) formed at predetermined positions on the insulating resin (20), and a surface of a conductive wire. And a predetermined pad 1
6 and 17 are electrically connected and a part of the insulating resin 2 is used.
A configuration is provided that includes the covered wire 18 exposed from 0 and a conductive resin 22 formed on the insulating resin 20 to seal the covered wire 18 exposed on the insulating resin 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a wiring board, a wiring board and a semiconductor device, and more particularly to a wiring having a structure in which electrodes formed on the surface of a substrate are connected by internal wiring formed inside the substrate. The present invention relates to a method for manufacturing a substrate, a wiring substrate, and a semiconductor device. In recent years, BGA (Ball Grid Arra
As represented by y), there is provided a semiconductor device in which a semiconductor element is mounted on a wiring board and uses external connection terminals such as solder balls as external connection terminals.

In addition, with the increase in the number of terminals of the semiconductor element accompanying the above-mentioned high density, the internal wiring formed on the wiring board also tends to have a high density. Therefore, there is a demand for a technique for reliably fanning out wiring in a wiring board from a connection position of a semiconductor element to a connection position of an external connection terminal even when the number of terminals of the semiconductor element increases.

[0003]

2. Description of the Related Art Conventionally, as a wiring board used for a semiconductor device having a structure in which a semiconductor element is mounted on a wiring board and external connection terminals such as solder balls are provided on a surface opposite to a mounting surface of the semiconductor element. A wiring board made of an inorganic material such as ceramic, or a wiring board in which a through-hole is provided in a single-layer resin substrate, and a pattern formed on the upper surface of the substrate and a pattern formed on the lower surface of the substrate are connected using the through-hole. Etc. are known.

Further, as a method of bonding a semiconductor element to a wiring board, a method using flip-chip bonding has been increasing in order to cope with a higher density of semiconductor elements and a narrower pitch of terminals. In addition, in order to cope with the above-mentioned increase in density and increase in the number of terminals, wiring boards having a multi-layer wiring structure, particularly inorganic material-based boards, are increasing.

FIG. 1 shows an example of a conventional wiring board. In the figure, a wiring substrate is applied to a semiconductor device. The semiconductor device 1 shown in FIG. 1 uses a ceramic multilayer wiring board 3 as a wiring board, and uses a flip chip bonding as a bonding method of the semiconductor element 2. The ceramic multilayer wiring board 3 has a bump bonding pad 6 on an element mounting surface (an upper surface in the figure) on which the semiconductor element 2 is mounted, and has an external connection on a side opposite to the element mounting surface (a lower surface in the figure). For use. A bump 5 is provided on the lower surface of the semiconductor element 2 in the drawing, and the semiconductor element 2 is mounted on the ceramic multilayer wiring board 3 by bonding the bump 5 to a bump bonding pad 6.

A conductor wiring 8 is formed inside the ceramic multilayer wiring board 3. The bump bonding pad 6 is formed at one end of the conductor wiring 8, and an external connection pad 7 is formed at the other end. Are formed. Solder balls 4 functioning as external connection terminals are bonded to the external connection pads 7, whereby the semiconductor element 2 is connected to the solder balls 4 via the bumps 5, the bump bonding pads 6, the conductor wiring 8, and the external connection pads 7. 4 is electrically connected.

The coefficient of thermal expansion of the semiconductor element 2 is different from the coefficient of thermal expansion of the ceramic multilayer wiring board 3. For this reason, when a heating process is performed to join the solder balls 4 to a mounting board (not shown) during mounting, the semiconductor element 2 is greatly deformed with respect to the ceramic multilayer wiring board 3, and thus the semiconductor element 2 and the ceramic multilayer wiring A large stress is applied to the bonding position with the substrate 3, that is, the position where the bumps 5 are provided.

For this reason, an underfill material 9 is interposed between the semiconductor element 2 and the ceramic multilayer wiring board 3 to prevent an excessive stress from being applied to the bump 5 by the underfill material 9. are doing.

[0009]

SUMMARY OF THE INVENTION The above-described semiconductor device 1
Since the ceramic multi-layer wiring board 3 is used as the wiring board, stack vias become possible, and if the number of layers is increased, the pitch of the bumps 5 can be reduced. However, when the number of layers is increased, the weight of the ceramic multilayer wiring board 3 made of an inorganic material is increased, resulting in a problem that the semiconductor device 1 becomes heavier.

Further, since a semiconductor device using a resin substrate as a wiring substrate uses a wiring substrate made of resin which is lighter than ceramics, the semiconductor device 1 using the ceramic multilayer wiring substrate 3 is lighter. There are benefits in terms of conversion. However, since a single-layer wiring board is used, the wiring density is limited, and there is a problem that it is not possible to cope with a higher density and a narrower pitch of a semiconductor element.

The present invention has been made in view of the above points, and provides a method of manufacturing a wiring board, a wiring board, and a semiconductor device which can cope with a high density and a narrow pitch of semiconductor elements while reducing the weight. The purpose is to do.

[0012]

Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means. In the method for manufacturing a wiring board according to the present invention, a conductive layer is formed on a flat insulating substrate,
An electrode forming step of forming an electrode by patterning the conductive layer, and wire bonding for electrically connecting predetermined electrodes formed on the insulating substrate using a coated wire whose surface is coated with an insulating material And forming an insulating resin on a surface of the insulating substrate on which the electrodes are formed, so as to cover at least a connection portion between the coated wires and the electrodes, and to expose a part of a loop of the coated wires. A forming step, a conductive resin forming step of forming a conductive resin on the insulating resin so as to seal the covered wire exposed on the insulating resin, and an insulating step of removing the insulating substrate so as to expose the electrodes. And a substrate removing step.

According to a second aspect of the present invention, there is provided a method of manufacturing a wiring board, comprising forming a predetermined electrode on a flat conductive substrate using a coated wire having a surface coated with an insulating material. A wire bonding step of connecting between the positions, a surface of the conductive substrate on which the covering wire is provided, covering at least a connection portion between the covering wire and the conductive substrate, and a loop of the covering wire; An insulating resin forming step of forming an insulating resin so that a portion is exposed, and sealing the covered wire exposed on the insulating resin,
A wiring board, comprising: a conductive resin forming step of forming a conductive resin on the insulating resin; and an electrode forming step of forming an electrode at the electrode forming position by patterning the conductive substrate. Manufacturing method.

According to a third aspect of the present invention, there is provided a wiring board, comprising: an insulating resin formed in a sheet shape; electrodes formed at predetermined positions on the insulating resin; It is configured to be coated, and electrically connected between the predetermined electrodes and partially covered wire exposed from the insulating resin, to seal the covered wire exposed on the insulating resin, And a conductive resin formed on the insulating resin.

Further, according to a fourth aspect of the present invention, there is provided a semiconductor device, wherein the semiconductor element is mounted, and the wiring manufactured by the method of manufacturing a wiring board according to any one of the first to third aspects. A substrate, comprising an external connection terminal joined to the wiring substrate, among the electrodes formed on the wiring substrate, as an element connection electrode for connecting the electrode located near the center to the semiconductor element, The semiconductor element is electrically connected to the element connection electrode, and among the electrodes formed on the wiring board, an external connection terminal electrode for connecting the electrode located near the outer periphery to the external connection terminal, The external connection terminal is electrically connected to the external connection terminal electrode, and the covering wire is configured to electrically connect the element connection electrode and the external connection terminal electrode. Do Than it is.

Each of the above means operates as follows.
According to the first to third aspects of the present invention, since the surface of the coated wire connecting the predetermined electrodes is coated with an insulating material, even if the coated wires come into contact with each other, it is possible for both to conduct. Absent. Therefore, the pitch between the electrodes can be reduced, and it is possible to cope with the increase in the number of terminals associated with the increase in the density of the semiconductor element.

Further, since the wiring board is mostly composed of resin (specifically, insulating resin and conductive resin), the weight of the wiring board can be reduced. That is, since the resin is lighter than an inorganic material such as ceramic, most of the wiring substrate is made of a resin (specifically, an insulating resin and a conductive resin), so that the ceramic multilayer wiring conventionally used is used. The weight can be reduced as compared with the substrate.

Further, the connection between the covered wire and each electrode is protected by an insulating resin, and the portion of the covered wire exposed from the insulating resin is covered with the conductive resin. Therefore, the electrical characteristics (particularly, high-frequency characteristics) of the wiring board can be improved. Further, according to the fourth aspect of the present invention, as described above, the use of a wiring board which can cope with the increase in the number of terminals, is lightweight, and has good electric characteristics is used, thereby increasing the density and weight of the semiconductor device. , And high-speed processing can be achieved.

[0019]

Next, embodiments of the present invention will be described with reference to the drawings. 2 and 3 show the first embodiment of the present invention.
A method of manufacturing a wiring board 10A according to an embodiment is shown along a manufacturing procedure, and FIG. 5 shows a semiconductor device 11A using the wiring board 10A. For convenience of description, prior to description of the method of manufacturing the wiring substrate 10A, first, the semiconductor device 11
The configuration of A will be described.

The semiconductor device 11A shown in FIG. 5 roughly includes a semiconductor element 12, a wiring board 10A, and solder balls 14.
(External connection terminals), an insulating substrate 20A (substrate), and the like. The semiconductor element 12 has a plurality of bumps 15 formed on the outer periphery of a circuit formation surface (upper surface in the figure).
Further, the semiconductor element 12 is a high-density element, so that the bump pitch is also reduced.

The wiring board 10A includes the bump bonding pad 1
6, the external connection pad 17, the covering wire 18, the insulating resin 20, the conductive resin 22, and the like. The bump bonding pad 16 and the external connection pad 17 are made of copper,
It is formed of a metal material such as aluminum or 42 alloy. Among them, the bump bonding pad 16 is connected to the wiring board 10A.
Are formed at positions corresponding to the positions at which the bumps 15 provided on the semiconductor element 12 are formed. The external connection pad 17 is formed at a position outside the wiring board 10A, and the formation position is set to correspond to the arrangement position of the solder balls 14.

A covering wire 18 is wire-bonded between a predetermined bump bonding pad 16 and an external connection pad 17. The covered wire 18 has a configuration in which the surface of a conductive wire such as gold is coated with an insulating resin film, and is configured to be capable of performing wire bonding with an existing wire bonding apparatus. Further, the insulating resin film is configured to be melted or sublimated by heat applied when bonding the covering wire 18 to the pads 16 and 17. Therefore, when performing the wire bonding process, the same wire bonding process as using a normal wire (a wire that is not coated with an insulating resin film) can be performed using the covered wire 18.

The bonding positions between the pads 16 and 17 and the covering wire 18 are protected by being covered with an insulating resin 20. The insulating resin 20 is a sheet-shaped resin, and is made of an insulating resin having thermosetting or thermoplastic properties, or a resin obtained by adding an inorganic material such as silica or alumina to this insulating resin. Specific resin materials include, for example, epoxy resins, polyimide resins, benzocyclobutene, olefins, and organic resins such as Teflon.

The thickness of the insulating resin 20 depends on each pad 1
It is smaller than the wire loop height of the covering wire 18 disposed between the wires 6 and 17. Therefore, a part of the covering wire 18 is exposed on the upper surface of the insulating resin 20. The coated wire 18 exposed on the insulating resin 20 is
It is sealed with a conductive resin 22. Conductive resin 22
Is made of a thermosetting or thermoplastic resin containing a material having good thermal conductivity and conductivity such as silver as a filler. The conductive resin 22 is formed on the conductive resin 22 by a potting method using a dispenser, a printing method using a mask, or the like. In addition, the conductive resin 22 is formed so as to entirely cover the covered wire 18 described above.

The semiconductor element 12 is mounted on the bump bonding pad 16 formed on the wiring substrate 10A having the above-mentioned structure by using the flip chip technique. Thus, the semiconductor element 12 and the wiring board 10A are electrically connected. An underfill material 19 is interposed between the semiconductor device 12 and the wiring board 10A. Underfill material 19
Is made of a thermosetting organic resin such as an epoxy, a cyanate ester, and a polyimide. The underfill material 19 has a function of suppressing stress (stress) on the flip-chip bonded bump bonding portion.

On the other hand, the solder ball 14 functions as an external connection terminal, and is joined to the external connection pad 17 of the wiring board 10A by using, for example, a transfer method. Therefore,
The semiconductor element 12 includes a bump 15 and a bump bonding pad 1.
6, electrically connected to the solder ball 14 via the covering wire 18 and the external connection pad 17. continue,
A first embodiment of a method of manufacturing the wiring board 10A provided in the semiconductor device 11A having the above configuration will be described with reference to FIGS.

To manufacture the wiring board 10A, first, FIG.
As shown in (A), a flat insulating substrate 21 is prepared.
The flat insulating substrate 21 is made of, for example, an inorganic material such as alumina, mullite, glass, or silicon, or an organic material such as polyimide, FR-4, or BT resin. The upper surface of the insulating substrate 21 is a highly accurate smooth surface.
As shown in FIG. 2B, a conductor layer 22 is formed on the entire upper surface of the insulating substrate 21 with a predetermined thickness. The conductive layer 22 is a conductive metal such as copper, aluminum, nickel, and gold, and is formed by using a sputtering method or an electroless plating method.

When the conductor layer 22 is formed, a resist (not shown) for masking a portion corresponding to a position where the bump bonding pad 16 and the external connection pad 17 are formed is formed, and an etching process is performed to perform a patterning process. Thereby, as shown in FIG. 2C, the bump bonding pad 16 and the external connection pad 17 are located at predetermined positions on the upper surface of the insulating substrate 21.
(Electrode) is formed (electrode formation step).

Subsequently, as shown in FIG. 3D, a covering wire 18 is wire-bonded between a predetermined bump bonding pad 16 formed on the insulating substrate 21 and the external connection pad 17 (wire bonding). Process). As described above, the covered wire 18 is formed by coating a wire made of a conductive metal material such as a gold wire with an insulating resin film.
It is configured to be melted or sublimated by the heat applied when bonding the substrates 6 and 17. Therefore, even with the coated wire 18 on which the insulating resin film is formed, a wire bonding process can be performed in the same manner as a normal wire.

As described above, when the wire bonding process of the covering wire 18 to each of the pads 16 and 17 is completed, the insulating resin 20 is subsequently formed on the insulating substrate 21 as shown in FIG. (Insulating resin forming step). The insulating resin 20 is formed on the insulating substrate 2 by a potting method using a dispenser, a printing method using a mask, or the like.
1 is formed. The insulating resin 20 is formed to have a thickness that covers the bonding position between the above-described covered wire 18 and each of the pads 16 and 17. Therefore, the insulating resin 20 has a sheet-like shape, and also has a function of protecting the joining position.

When the above-mentioned insulating resin forming step is completed, subsequently, as shown in FIG. 3F, a conductive resin 22 is formed on the insulating substrate 20 (conductive resin forming step). As described above, the conductive resin 22 is a thermosetting or thermoplastic resin containing a material having good heat conductivity and conductivity, such as silver, as a filler, and thus both the heat conductivity and conductivity are good. Characteristics. The conductive resin 22 is formed on the conductive resin 22 by a potting method using a dispenser, a printing method using a mask, or the like. At this time, the conductive resin 22 is formed so as to cover all the covering wires 18 exposed from the insulating substrate 21.

After the conductive resin 22 is formed as described above, a process of removing the insulating substrate 21 is performed to expose the pads 16 and 17 (insulating substrate removing step). The process of removing the insulating substrate 21 is performed by performing, for example, laser processing, etching processing, or polishing processing. By performing the above processing, FIG.
The wiring substrate 10A shown in FIG.

In order to manufacture the semiconductor device 11A using the wiring board 10A, the semiconductor element 12 is mounted on the bump bonding pads 16 formed on the wiring board 10A by using the flip chip technique, and the semiconductor device 12A is manufactured. An underfill material 19 is interposed between the substrate and the wiring board 10A.
The external connection pad 1 formed on the wiring board 10A
The solder ball 14 is bonded to the substrate 7 by using, for example, a transfer method.
Thus, the semiconductor device 11A shown in FIG. 5 is manufactured.

According to the manufacturing method of the present embodiment, the covering wire 18 connecting the bump bonding pad 16 and the external connection pad 17 is adjacent to the covering wire 18 because its surface is covered with the insulating material. The covering wires 18 are arranged close to each other, so that even if the covering wires 18 come into contact with each other, they do not conduct. Therefore, the pitch of the bump bonding pad 16 can be reduced. Therefore, the wiring board 10
When A is used for the semiconductor device 11A, the semiconductor element 1
It is possible to cope with the increase in the number of terminals associated with the high density of 2.

Further, since the wiring board 10A is mostly composed of resin (specifically, the insulating resin 20 and the conductive resin 22), the weight of the wiring board 10A can be reduced. That is, since the resin is lighter than an inorganic material such as ceramics, the weight of the wiring board 10A is reduced as compared with the conventionally used ceramic multilayer wiring board 3 (see FIG. 1) by forming most of the wiring board with the resin. Can be achieved. Therefore, when the wiring board 10A is used for the semiconductor device 11A, the weight of the semiconductor device 11A can be reduced.

The covering wire 18 and each of the pads 16, 1
Since the connection portion 7 is protected by the insulating resin 21, the bonding reliability between the covering wire 18 and the pads 16 and 17 can be improved. Furthermore, since the portion of the covered wire 18 exposed from the insulating resin 21 is covered with the conductive resin 22, the conductive resin 22 having excellent conductivity functions as a shielding material for shielding the covered wire 18. Therefore, the electrical characteristics (particularly, high frequency characteristics) of the wiring board 1A can be improved. Therefore, the wiring board 10
When A is used in the semiconductor device 11A, the penetration of disturbance can be prevented, and the semiconductor device 12 driven at a high frequency can be prevented without affecting other electronic devices disposed near the semiconductor device 11A. Can respond.

Next, a method of manufacturing the wiring board 10B according to the second embodiment will be described with reference to FIGS.
The wiring board 10A and the wiring board 10B manufactured according to the present embodiment have a configuration in which a part of each of the pads 16 and 17 is embedded in the insulating resin 20 (the configuration of the wiring board 10A), or All of the pads 16 and 17 are insulating resin 2
The only difference is whether the configuration is exposed from 0 (the configuration of the wiring board 10B), and the configurations are substantially the same. Also,
4 and 5, the same components as those shown in FIGS. 2 and 3 are denoted by the same reference numerals, and description thereof will be omitted.

To manufacture the wiring board 10B, first, FIG.
As shown in (A), a conductive substrate 30 in the form of a flat plate is prepared. The flat conductive substrate 30 is made of a conductive metal such as copper, aluminum, and 42 alloy, for example, and its upper surface is a smooth surface with high precision. This conductive substrate 3
A wire 18 is wire-bonded on the wire 0 as shown in FIG. 4B (wire bonding step).
The covering wire 18 is provided so as to connect between a predetermined formation position of the bump bonding pad 16 and a predetermined formation position of the external connection pad 17.

As described above, the covered wire 18 is formed by coating a wire made of a conductive metal material such as a gold wire with an insulating resin film, and the insulating resin film covers the covered wire 18. It is configured to dissolve or sublime by the heat applied when bonding to the pads 16 and 17. Therefore, even with the coated wire 18 on which the insulating resin film is formed, a wire bonding process can be performed in the same manner as a normal wire.

When the above-described wire bonding process is completed, the conductive substrate 30 is subsequently turned off as shown in FIG.
The insulating resin 20 is formed thereon (insulating resin forming step).
As in the first embodiment, at least the covering wire 18 and each pad 1 are formed by a potting method using a dispenser or a printing method using a mask, as in the first embodiment.
It is formed on the insulating substrate 21 with a thickness that covers the joint position with the insulating substrates 6 and 17.

When the insulating resin forming step is completed, a conductive resin 22 is formed on the insulating substrate 20 as shown in FIG. 4D (conductive resin forming step). The conductive resin 22 is also formed on the conductive resin 22 by a potting method using a dispenser, a printing method using a mask, or the like. At this time, the conductive resin 22 is formed so as to cover all the covering wires 18 exposed from the insulating substrate 21.

After the conductive resin 22 is formed as described above, a process of patterning the conductive substrate 30 is performed to form the pads 16 and 17 (electrode forming step). The pads 16 and 17 are formed by performing, for example, laser processing, etching processing, and the like. By performing the above processing, the wiring substrate 10B shown in FIG. 4E is formed.

In the manufacturing method according to the present embodiment, the insulating substrate 21 required in the manufacturing method according to the first embodiment is not required.
The number of parts can be reduced, and the product cost of the wiring board 10B can be reduced accordingly. In addition, since the step of removing the insulating substrate required in the manufacturing method of the first embodiment is not required, the manufacturing process can be simplified.

Next, the second embodiment of the present invention will be described with reference to FIGS.
The semiconductor devices 11B and 11C according to the third embodiment will be described. Each of the semiconductor devices 11B and 11C is characterized by using the above-described wiring board 11A (the same applies to the wiring board 11B). 6 and 7, the same components as those described with reference to FIG. 5 are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 6 shows a semiconductor device 11 according to a second embodiment.
B is shown. The semiconductor device 11B shown in the figure has a frame member 23 provided on a wiring board 11A. The frame member 23 is disposed at the outermost peripheral position of the wiring board 11A. The frame material 23 functions as an outer frame when the insulating resin 20 and the conductive resin 22 are potted in the insulating resin disposing step and the conductive resin disposing step. By providing the frame member 23, unnecessary flow of the insulating resin 20 and the conductive resin 22 at the time of potting can be prevented, and the accuracy of the outer dimensions can be determined. Further, by selecting a highly rigid material for the frame member 23, the strength of the semiconductor device 11B can be improved.

FIG. 7 shows a semiconductor device 10 according to the third embodiment.
It is a figure for explaining C. The semiconductor device 10C according to the present embodiment is characterized in that the radiation fins 26 are provided. The heat radiation fins 26 are made of a material having a light weight and good thermal conductivity, such as aluminum, and have a shape with a wide heat radiation area. The radiation fins 26 are formed of the conductive resin 2 on the wiring board 10A.
2 is fixed using a heat conductive material (not shown).

As described above, the conductive resin 22 contains a filler having good heat conductivity inside, and has high heat conductivity. Therefore, by disposing the radiating fins 26 on the conductive resin 22, the heat generated in the semiconductor element 12 can be radiated to the outside from the radiating fins 26 via the conductive resin 22, and the semiconductor element 12 can be stabilized. Can be operated.

In each of the above embodiments, the semiconductor device 1
Although only the configuration in which the semiconductor device 12 is flip-chip mounted on the wiring boards 10A and 10B is shown, the semiconductor device 12 may be mounted face-up on the wiring boards 10A and 10B. Further, in the present embodiment, the example in which the wiring boards 10A and 10B are applied to the semiconductor devices 11A to 11C has been described, but the application of the wiring boards 10A and 10B is applied to the semiconductor devices 11A to 11C.
However, the present invention is not limited to this, and can be used as a substrate on which other electronic elements are mounted.

[0049]

According to the present invention as described above, the following various effects can be realized. According to the first to third aspects of the present invention, since the surface of the coated wire is coated with the insulating material, even if the coated wires come into contact with each other, they do not conduct. Therefore, the pitch between the electrodes can be reduced, and it is possible to cope with the increase in the number of terminals associated with the increase in the density of the semiconductor element.

Further, since most of the wiring board is made of resin (specifically, insulating resin and conductive resin), the resin is lighter than inorganic materials such as ceramics, and is therefore conventionally used. The weight can be reduced as compared with the ceramic multilayer wiring substrate. In addition, the connection between the covered wire and each electrode is protected with an insulating resin, and the portion of the covered wire exposed from the insulating resin is covered with the conductive resin. Electrical characteristics (particularly, high-frequency characteristics) of the substrate can be improved.

Further, according to the fourth aspect of the present invention, by using a wiring board which can cope with the increase in the number of terminals, is lightweight and has good electric characteristics, it is possible to increase the density and weight of the semiconductor device, and High-speed processing can be achieved. With respect to the above description, the following items are further disclosed. (1) An insulating resin formed in a sheet shape, an electrode formed at a predetermined position on the insulating resin, and a surface of a conductive wire coated with an insulating material. And a conductive resin formed on the insulating resin so as to seal the coated wire partially exposed from the insulating resin and sealing the coated wire exposed on the insulating resin. A wiring board characterized by the above-mentioned. (2) The wiring board according to (1), wherein the covering wire has a configuration in which the internal wire is exposed by dissolving or sublimating the insulating material by heat applied during the connection. Wiring board. (3) In the wiring board described in the paragraph (1) or (2),
A wiring substrate, wherein a resin material serving as a base material containing a filler having high thermal conductivity and high conductivity is used as the conductive resin.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 2 is a view for explaining the method of manufacturing the wiring board according to the first embodiment of the present invention (part 1);

FIG. 3 is a diagram for explaining the method of manufacturing the wiring board according to the first embodiment of the present invention (part 2).

FIG. 4 is a diagram for explaining a method of manufacturing a wiring board according to a second embodiment of the present invention.

FIG. 5 is a diagram illustrating a semiconductor device according to a first embodiment of the present invention.

FIG. 6 is a diagram illustrating a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a diagram illustrating a semiconductor device according to a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10A, 10B Wiring board 11A-11C Semiconductor device 12 Semiconductor element 14 Solder ball 15 Bump 16 Bump bonding pad 17 External connection pad 18 Covering wire 20 Insulating resin 21 Insulating substrate 22 Conductive resin 23 Frame material 26 Radiation fin 30 Conductive substrate

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Dai Kanwa 4-1-1, Kamidadanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture F-term in Fujitsu Limited 5F044 FF01 KK02 KK19 LL11 LL15 5F061 AA01 BA04 CA05 CA12

Claims (4)

[Claims] 1. A conductive layer is formed on a flat insulating substrate,
An electrode forming step of forming an electrode by patterning the conductor layer; and wire bonding for electrically connecting predetermined electrodes formed on the insulating substrate using a coated wire whose surface is coated with an insulating material. And an insulating resin for forming an insulating resin on a surface of the insulating substrate on which the electrodes are formed, so as to cover at least a connection portion between the coated wires and the electrodes, and to expose a part of a loop of the coated wires. A forming step, a conductive resin forming step of forming a conductive resin on the insulating resin so as to seal the covered wire exposed on the insulating resin, and an insulating step of removing the insulating substrate so as to expose the electrodes. A method for manufacturing a wiring board, comprising: a substrate removing step. 2. A wire bonding step of connecting between predetermined electrode forming positions set on a flat conductive substrate using a coated wire whose surface is coated with an insulating material; An insulating resin forming step of forming an insulating resin on a surface on which the covering wire is provided, so as to cover at least a connection portion between the covering wire and the conductive substrate, and to expose a part of a loop of the covering wire. An electrically conductive resin forming step of forming an electrically conductive resin on the insulating resin so as to seal the covered wire exposed on the insulating resin, and by patterning the electrically conductive substrate, an electrode is formed at the electrode forming position. Forming an electrode, and a method of manufacturing a wiring board. 3. An insulating resin formed in a sheet shape, an electrode formed at a predetermined position on the insulating resin, and a surface of a conductive wire coated with an insulating material. A conductive wire formed on the insulating resin to electrically connect the electrodes and partially expose the coating wire from the insulating resin, and to seal the coated wire exposed on the insulating resin. A wiring board comprising: 4. A semiconductor element, a wiring board manufactured by the method for manufacturing a wiring board according to claim 1, wherein the semiconductor element is mounted, and an external connection bonded to the wiring board. A terminal, wherein the electrode located near the center of the electrodes formed on the wiring substrate is used as an element connection electrode for connecting to the semiconductor element, and the semiconductor element is electrically connected to the element connection electrode. Among the electrodes formed on the wiring substrate, an electrode for an external connection terminal that connects the electrode located near the outer periphery to the external connection terminal, and the external connection terminal is connected to the external connection terminal electrode. A semiconductor device, wherein the semiconductor wire is electrically connected, and the covering wire electrically connects the element connection electrode and the external connection terminal electrode.