JP2000288770A - AuSn multilayer solder - Google Patents
AuSn multilayer solderInfo
- Publication number
- JP2000288770A JP2000288770A JP11093869A JP9386999A JP2000288770A JP 2000288770 A JP2000288770 A JP 2000288770A JP 11093869 A JP11093869 A JP 11093869A JP 9386999 A JP9386999 A JP 9386999A JP 2000288770 A JP2000288770 A JP 2000288770A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ausn
- multilayer
- solder
- multilayer solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims description 56
- 238000007747 plating Methods 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 23
- 239000000956 alloy Substances 0.000 abstract description 23
- 229910015363 Au—Sn Inorganic materials 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 238000007772 electroless plating Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002846 Pt–Sn Inorganic materials 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
(57)【要約】
【課題】多層電極表面が平滑化され、多層電極のＡｕメ
ッキ層からのボイドや不純物がＡｕ−Ｓｎ合金中に拡散
することがなく、高強度かつ高信頼性の接合特性が得ら
れるようにする。
【解決手段】最下層がＡｕ薄膜４であり、Ａｕ薄膜４上
に拡散防止金属層３が積層され、該拡散防止金属層３上
にＡｕ層１とＳｎ層２の交互層を有する。
[PROBLEMS] To provide a high-strength and high-reliability bonding characteristic in which the surface of a multilayer electrode is smoothed, voids and impurities from an Au plating layer of the multilayer electrode do not diffuse into the Au-Sn alloy. Is obtained. A lowermost layer is an Au thin film, a diffusion preventing metal layer is laminated on the Au thin film, and an Au layer and an Sn layer are alternately formed on the diffusion preventing metal layer.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミックチップ
キャリア等のＡｕメッキ層の電極上に、光半導体素子等
を高精度、高強度に固定するためのＡｕＳｎ多層ハンダ
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an AuSn multilayer solder for fixing an optical semiconductor element or the like with high precision and high strength on an electrode of an Au plating layer such as a ceramic chip carrier.
【０００２】[0002]
【従来の技術】従来のＡｕＳｎ多層ハンダＨ２を図２に
示す。同図において、１はＡｕＳｎ多層ハンダのＡｕ
層、２はＡｕＳｎ多層ハンダのＳｎ層、５はセラミック
基板上の配線電極等の最上層を構成するＡｕメッキ層、
６は配線電極等の中間層であるＮｉメッキ層、７は配線
電極等の最下層である下地電極層である。2. Description of the Related Art FIG. 2 shows a conventional AuSn multilayer solder H2. In the figure, reference numeral 1 denotes Au of an AuSn multilayer solder.
Layer 2, an Sn layer of AuSn multilayer solder, 5 an Au plating layer constituting an uppermost layer such as a wiring electrode on a ceramic substrate,
Reference numeral 6 denotes a Ni plating layer which is an intermediate layer such as a wiring electrode, and reference numeral 7 denotes a base electrode layer which is a lowermost layer such as a wiring electrode.
【０００３】従来、このようなＡｕＳｎ多層ハンダは、
一般にシリコン等の半導体基板上に形成され、Ｃｒ下層
／Ａｕ上層，Ｔｉ最下層／Ｐｔ中間層／Ａｕ最上層等の
構造を有する電極上に、半導体レーザやフォトダイオー
ド等の光半導体素子を固定するために、接合強度及び接
合位置精度について高い信頼性が得られることから、多
用されて来た。Conventionally, such AuSn multilayer solder has
In general, an optical semiconductor device such as a semiconductor laser or a photodiode is fixed on an electrode formed on a semiconductor substrate such as silicon and having a structure such as a Cr lower layer / Au upper layer, a Ti lower layer / Pt intermediate layer / Au upper layer. Therefore, it has been widely used because high reliability can be obtained with respect to bonding strength and bonding position accuracy.
【０００４】上記ＡｕＳｎ多層ハンダの形成方法におい
て、一般に組成比、位置精度等の点で高精度が要求され
るため、同時蒸着によるＡｕ−Ｓｎ合金ハンダや、Ａｕ
及びＳｎを交互に蒸着し、積層する事により所望の重量
比とするＡｕＳｎ多層ハンダが提案されている（特開平
７−９４７８６号公報参照）。前記ＡｕＳｎ多層ハンダ
において、最下層のＡｕ層は最終的にＡｕ−Ｓｎ合金ハ
ンダを構成する一成分として捉えられており、図３のＡ
ｕ−Ｓｎ合金の状態図に示すように、実際共晶点である
２８０℃以上に加熱するとＡｕ−Ｓｎ合金化する。In the method of forming the AuSn multilayer solder, high accuracy is generally required in terms of composition ratio, positional accuracy, and the like. Therefore, Au—Sn alloy solder by simultaneous evaporation, Au
Au and Sn are alternately deposited and laminated to obtain a desired weight ratio by AuSn multilayer soldering (see Japanese Patent Application Laid-Open No. 7-94786). In the AuSn multilayer solder, the lowermost Au layer is finally regarded as one component constituting the Au—Sn alloy solder, and is shown in FIG.
As shown in the phase diagram of the u-Sn alloy, when it is heated to 280 ° C. or more, which is the actual eutectic point, it turns into an Au-Sn alloy.
【０００５】一方、電極及びＡｕＳｎ多層ハンダを使用
する基板について、高周波特性等が良好なものとして低
誘電率のアルミナ等のセラミックス材料が用いられる。
このアルミナ等のセラミックスから成る基板上に電極を
形成する方法として、セラミックグリーンシートに、下
地電極層としてＷ，Ｍｏ等の高融点金属のペーストを印
刷することにより所望の電極パターンを形成し、この電
極パターンをセラミックグリーンシートと共に１５００
〜１６００℃で同時焼成し、ハンダ付けを可能にするた
め電極パターン上にＮｉメッキ層を無電解メッキで形成
し、更にＡｕメッキ層を無電解メッキで形成する方法が
提案されている（特開平１０−２４２３２７号公報参
照）。更に、前記電極パターン上に光半導体素子等を高
精度に搭載するために、前記Ａｕメッキ層上に、メタル
マスク等を用いてＡｕ−Ｓｎ合金又はＡｕＳｎ多層ハン
ダを蒸着法により形成している。On the other hand, for a substrate using an electrode and AuSn multilayer solder, a ceramic material such as alumina having a low dielectric constant is used so as to have good high-frequency characteristics.
As a method of forming electrodes on a substrate made of ceramics such as alumina, a desired electrode pattern is formed by printing a paste of a high melting point metal such as W or Mo on a ceramic green sheet as a base electrode layer. Electrode pattern with ceramic green sheet 1500
A method has been proposed in which a Ni plating layer is formed by electroless plating on an electrode pattern and an Au plating layer is formed by electroless plating in order to enable simultaneous soldering at 1600 ° C. and soldering (JP-A-Hei. 10-242327). Further, in order to mount an optical semiconductor element or the like on the electrode pattern with high accuracy, an Au—Sn alloy or AuSn multilayer solder is formed on the Au plating layer by using a metal mask or the like by a vapor deposition method.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、一般に
Ｗ，Ｍｏ等の高融点金属からなる下地電極層は、前記
Ｗ，Ｍｏ等の金属粒子を含むペーストを印刷、焼成して
形成するため、焼成後の表面形状は平滑性に劣り、この
下地電極層上に形成するＮｉメッキ層及びＡｕメッキ層
も表面が凸凹化するという問題があった。また、Ｎｉメ
ッキ層及びＡｕメッキ層には微量のメッキ液や不純物等
が混入する事があるため、Ｎｉメッキ層及びＡｕメッキ
層上に直接ＡｕＳｎ多層ハンダを形成すると、その接合
強度や長期信頼性に大きな問題が生じる事がある。However, in general, a base electrode layer made of a refractory metal such as W or Mo is formed by printing and firing a paste containing metal particles such as W or Mo. Has poor surface smoothness, and the surface of the Ni plating layer and the Au plating layer formed on the base electrode layer also has a problem that the surface becomes uneven. Also, since a very small amount of plating solution or impurities may be mixed in the Ni plating layer and the Au plating layer, if the AuSn multilayer solder is directly formed on the Ni plating layer and the Au plating layer, the bonding strength and the long-term reliability are increased. Can have major problems.
【０００７】即ち、Ｎｉメッキ層及びＡｕメッキ層が平
滑性に劣るため、積層したＡｕＳｎ多層ハンダを加熱溶
融しＡｕ−Ｓｎ合金を形成する際に下地のＡｕメッキ層
も一部溶食されるため、ボイドや不純物がＡｕ−Ｓｎ合
金中に拡散する事により、接合強度が劣化するばかりで
なく接合の長期信頼性が低下するという問題点があっ
た。特に、無電解メッキで形成したＡｕメッキ層等の電
極の一部を、ＡｕＳｎ多層ハンダの組成の一部として用
いると、顕著に接合特性が劣化するという問題点があっ
た。That is, since the Ni plating layer and the Au plating layer are inferior in smoothness, when the laminated AuSn multilayer solder is heated and melted to form an Au-Sn alloy, the underlying Au plating layer is also partially eroded. In addition, the diffusion of voids and impurities into the Au-Sn alloy not only deteriorates the bonding strength but also lowers the long-term reliability of the bonding. In particular, when a part of the electrode such as the Au plating layer formed by the electroless plating is used as a part of the composition of the AuSn multilayer solder, there is a problem that the bonding characteristics are remarkably deteriorated.
【０００８】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は、セラミックス基板上に形
成された下地電極層／Ｎｉメッキ層／Ａｕメッキ層から
成る多層電極上に、ＡｕＳｎ多層ハンダを用いて光半導
体素子等を搭載する場合に、多層電極表面が凸凹化せず
平滑性に優れ、Ａｕメッキ層からのボイドや不純物がＡ
ｕ−Ｓｎ合金中に拡散することがなく、その結果高強度
かつ高信頼性の接合特性が得られるＡｕＳｎ多層ハンダ
を提供する事である。Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to provide AuSn on a multilayer electrode composed of a base electrode layer / Ni plating layer / Au plating layer formed on a ceramic substrate. When an optical semiconductor element or the like is mounted using multilayer solder, the surface of the multilayer electrode is not uneven and has excellent smoothness, and voids and impurities from the Au plating layer are A
An object of the present invention is to provide an AuSn multilayer solder which does not diffuse into a u-Sn alloy, and as a result, has high strength and high reliability bonding characteristics.
【０００９】[0009]
【課題を解決するための手段】本発明のＡｕＳｎ多層ハ
ンダは、最上層がＡｕメッキ層である多層電極上で溶融
され固着するＡｕＳｎ多層ハンダであって、最下層がＡ
ｕ薄膜であり、Ａｕ薄膜上に拡散防止金属層が積層さ
れ、該拡散防止金属層上にＡｕ層とＳｎ層の交互層を有
することを特徴とする。The AuSn multilayer solder of the present invention is an AuSn multilayer solder which is melted and fixed on a multilayer electrode whose uppermost layer is an Au plating layer, and the lowermost layer is made of ASn.
It is a u thin film, wherein a diffusion prevention metal layer is laminated on the Au thin film, and an alternate layer of an Au layer and a Sn layer is provided on the diffusion prevention metal layer.
【００１０】本発明は上記構成により、拡散防止金属層
（以下、金属バリア層ともいう）が、Ａｕメッキ層等の
メッキ時に混入したメッキ液に起因するボイドや不純物
の拡散を防止すると共に、金属バリア層上のＡｕＳｎ多
層ハンダが下地のＡｕメッキ層を溶食する事を防止す
る。その結果、ＡｕＳｎ多層ハンダの溶融、固着後の組
成比のバラツキを低減でき、安定したＡｕＳｎ合金を形
成でき、接合強度及び長期信頼性の点で優れたものとな
る。According to the present invention, the diffusion preventing metal layer (hereinafter, also referred to as a metal barrier layer) prevents diffusion of voids and impurities caused by a plating solution mixed at the time of plating an Au plating layer or the like. It prevents AuSn multilayer solder on the barrier layer from eroding the underlying Au plating layer. As a result, variation in the composition ratio of the AuSn multilayer solder after melting and fixing can be reduced, a stable AuSn alloy can be formed, and the bonding strength and long-term reliability are excellent.
【００１１】また本発明において、好ましくは、前記拡
散防止金属層が白金族元素からなる。前記白金族元素は
Ｐｔ，Ｐｄ，Ｉｒ，Ｒｈ，Ｒｕ，Ｏｓであり、耐食性及
びＳｎと合金を形成する上で好適であり、このうちＰｔ
が最も耐食性及び化学的安定性に優れ、容易にＳｎと合
金を形成し、その結果優れた接合強度が得られる。In the present invention, preferably, the diffusion preventing metal layer comprises a platinum group element. The platinum group elements are Pt, Pd, Ir, Rh, Ru, and Os, and are suitable for corrosion resistance and for forming an alloy with Sn.
Is most excellent in corrosion resistance and chemical stability, easily forms an alloy with Sn, and as a result, excellent bonding strength can be obtained.
【００１２】更に本発明において、好ましくは、前記Ａ
ｕ層とＳｎ層の交互層全体でのＡｕとＳｎの重量比が、
Ａｕ／Ｓｎ＜８０／２０である。Further, in the present invention, preferably, the above A
The weight ratio of Au and Sn in the entire alternating layer of the u layer and the Sn layer is:
Au / Sn <80/20.
【００１３】上記構成とすることにより、Ａｕ−Ｓｎ合
金組成（Ａｕ／Ｓｎ＝８０／２０）よりも若干Ｓｎリッ
チとする事により、Ａｕ−Ｓｎ合金形成時にＡｕＳｎ多
層ハンダと金属バリア層との界面で溶食されるＳｎ成分
の補給を行うと共に、搭載する光半導体素子用電極のＡ
ｕメッキ層を含めてほぼＡｕ／Ｓｎ＝８０／２０のＡｕ
Ｓｎ共晶ハンダを形成する事ができる。[0013] With the above structure, the Au-Sn alloy composition (Au / Sn = 80/20) is made slightly Sn-rich, so that the interface between the AuSn multilayer solder and the metal barrier layer is formed during the formation of the Au-Sn alloy. The replenishment of the Sn component which is eroded by the above is carried out, and the A
Au of approximately Au / Sn = 80/20 including u-plated layer
Sn eutectic solder can be formed.
【００１４】[0014]
【発明の実施の形態】本発明のＡｕＳｎ多層ハンダにつ
いて以下に説明する。図１は本発明のＡｕＳｎ多層ハン
ダＨ１の断面図であり、同図において、１はＡｕＳｎ多
層ハンダを構成するＡｕ層、２はＡｕＳｎ多層ハンダを
構成するＳｎ層、３は金属バリア層、４はＡｕ薄膜、５
は多層電極の最上層であり無電解メッキ等で形成された
Ａｕメッキ層、６は多層電極の中間層であり無電解メッ
キ等で形成されたＮｉメッキ層、７はＷ，Ｍｏ等の高融
点金属からなる下地電極層、８は光半導体素子を搭載す
るチップキャリア等用のセラミックス基板である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The AuSn multilayer solder of the present invention will be described below. FIG. 1 is a cross-sectional view of an AuSn multilayer solder H1 of the present invention. In FIG. 1, reference numeral 1 denotes an Au layer that forms an AuSn multilayer solder, 2 denotes an Sn layer that forms an AuSn multilayer solder, 3 denotes a metal barrier layer, and 4 denotes a metal barrier layer. Au thin film, 5
Is the uppermost layer of the multilayer electrode and is an Au plating layer formed by electroless plating or the like, 6 is an intermediate layer of the multilayer electrode and is a Ni plating layer formed by electroless plating or the like, and 7 is a high melting point such as W or Mo. A base electrode layer 8 made of metal is a ceramic substrate for a chip carrier or the like on which an optical semiconductor element is mounted.
【００１５】前記金属バリア層３の組成としては、上側
のＡｕＳｎ多層ハンダと下側のＡｕメッキ層との密着
性、ボイド及び不純物の拡散防止効果に関して検討、実
験を行った結果、Ｐｔ，Ｐｄ，Ｉｒ，Ｒｈ，Ｒｕ，Ｏｓ
の白金族元素、特にＰｔがＡｕＳｎ多層ハンダを構成す
るＡｕ，Ｓｎと合金を形成する金属であり、下側の多層
電極と密着性に優れた金属で、更に不純物の拡散を防止
する点で好適な事が判明した。これら白金族元素は、Ａ
ｕＳｎ多層ハンダを加熱溶融させＡｕ−Ｓｎ合金を形成
する際に、その成分元素であるＳｎと金属バリア層３の
界面で合金層を形成するため、Ａｕ−Ｓｎ合金と金属バ
リア層３との界面で優れた接合強度が得られる。また、
多層電極のＡｕメッキ層からのボイドや不純物の拡散を
抑制する効果が特に顕著であり、従って優れた接合特性
を有する。更には、前記金属バリア層３により、下側の
多層電極のＡｕメッキ層の溶喰がなくなるため、ＡｕＳ
ｎ多層ハンダの組成比の制御が行い易くなる。As for the composition of the metal barrier layer 3, as a result of study and experiments on the adhesion between the upper AuSn multilayer solder and the lower Au plating layer and the effect of preventing the diffusion of voids and impurities, Pt, Pd, Ir, Rh, Ru, Os
Is a metal that forms an alloy with Au and Sn that constitute the AuSn multilayer solder, and is a metal that has excellent adhesion to the lower multilayer electrode and is preferable in that it further prevents diffusion of impurities. It turned out. These platinum group elements are represented by A
When the uSn multilayer solder is heated and melted to form an Au-Sn alloy, an alloy layer is formed at the interface between Sn, which is a component element thereof, and the metal barrier layer 3, so that the interface between the Au-Sn alloy and the metal barrier layer 3 is formed. Excellent bonding strength can be obtained. Also,
The effect of suppressing the diffusion of voids and impurities from the Au plating layer of the multilayer electrode is particularly remarkable, and therefore has excellent bonding characteristics. Further, the metal barrier layer 3 prevents the Au plating layer of the lower multilayer electrode from being eroded.
It becomes easy to control the composition ratio of the n-layer solder.
【００１６】また、本発明では、ＡｕＳｎ多層ハンダの
Ａｕ層とＳｎ層の交互層全体でのＡｕとＳｎの重量比
が、Ａｕ／Ｓｎ＜８０／２０が良く、これにより、基板
側では若干のＳｎが金属バリア層３のＰｔ等と合金を形
成し、搭載される光半導体素子等側ではその電極のＡｕ
を溶喰し、溶融してＡｕＳｎ共晶ハンダ組成にほぼ等し
くなる。その結果、十分な接合強度を有し、長期信頼性
に優れた接合構造となる。より好ましくはＡｕ／Ｓｎ＝
７０／３０〜７６／２４であり、更には多層電極のＡｕ
メッキ層を含めるとＡｕ／Ｓｎが８０／２０以上になる
ように設定するのが良い。Further, in the present invention, the weight ratio of Au / Sn in the entire alternate layer of the Au layer and the Sn layer of the AuSn multilayer solder is preferably Au / Sn <80/20. Sn forms an alloy with Pt or the like of the metal barrier layer 3 and, on the side of the mounted optical semiconductor element or the like, the Au of the electrode is formed.
Is melted and becomes approximately equal to the AuSn eutectic solder composition. As a result, a bonding structure having sufficient bonding strength and excellent long-term reliability is obtained. More preferably, Au / Sn =
70/30 to 76/24, and further, the multilayer electrode Au
It is preferable that Au / Sn is set to be 80/20 or more when the plating layer is included.
【００１７】上記金属バリア層３の厚さは０．５〜２μ
ｍが良く、０．５μｍ未満では十分な拡散防止機能を果
たさず、２μｍを超えるとＡｕ／Ｓｎ多層ハンダのＳｎ
が多量に溶融され、Ａｕ／Ｓｎ多層ハンダ組成が大きく
ずれてしまう。The thickness of the metal barrier layer 3 is 0.5 to 2 μm.
m is good, and if it is less than 0.5 μm, it does not fulfill a sufficient diffusion preventing function. If it exceeds 2 μm, the Sn of the Au / Sn multilayer solder becomes
Is melted in a large amount, and the Au / Sn multilayer solder composition is largely shifted.
【００１８】本発明のＡｕＳｎ多層ハンダの総膜厚は３
〜６μｍが良く、３μｍ未満では以下の点で不都合であ
る。即ち、上記の如くＡｕＳｎ多層ハンダが溶融しＡｕ
−Ｓｎ合金化する際に、若干のＳｎとＰｔが合金を形成
する事で接合強度が増すが、Ａｕ−Ｓｎ合金の組成比に
及ぼす影響が大きくなる。一方、６μｍを超えると、Ａ
ｕＳｎ多層ハンダの量が多すぎＡｕ−Ｓｎ合金化するの
に時間がかかり、搭載する光半導体素子等の位置ずれを
起こし易く、位置精度が劣化する。The total thickness of the AuSn multilayer solder of the present invention is 3
６6 μm is good, and less than 3 μm is inconvenient in the following points. That is, as described above, the AuSn multilayer solder melts and
When forming a Sn alloy, a small amount of Sn and Pt form an alloy to increase the bonding strength, but the influence on the composition ratio of the Au-Sn alloy increases. On the other hand, if it exceeds 6 μm, A
The amount of the uSn multilayer solder is too large, and it takes time to form an Au-Sn alloy, and the mounted optical semiconductor element or the like is likely to be displaced, and the positional accuracy is deteriorated.
【００１９】また、ＡｕＳｎ多層ハンダにおけるＡｕ層
の層数は５〜１２が良く、５層未満では、光半導体素子
等の実装時の加熱温度プロファイルに非常に敏感な影響
を受け、実装時の位置精度等が劣化し易く安定性及び再
現性に欠ける。また、１２層を超えると、ＡｕＳｎ多層
ハンダの成膜時間が長くなり過ぎ、製造の作業性が悪く
高コスト化する。Ｓｎ層についても同様である。The number of Au layers in the AuSn multilayer solder is preferably 5 to 12, and if the number of layers is less than 5, the heating temperature profile at the time of mounting an optical semiconductor element or the like is very sensitive to the influence of the position. Accuracy deteriorates easily and lacks stability and reproducibility. On the other hand, when the number of layers is more than 12, the film formation time of the AuSn multilayer solder becomes too long, and the workability of the production is poor, and the cost is increased. The same applies to the Sn layer.
【００２０】本発明のＡｕＳｎ多層ハンダと接合する多
層電極は、最上層がＡｕメッキ層であり、これはＡｕＳ
ｎ多層ハンダとの密着強度を高める為である。In the multilayer electrode to be joined to the AuSn multilayer solder of the present invention, the uppermost layer is an Au plating layer, which is formed of AuSn.
This is for increasing the adhesion strength with the n-layer solder.
【００２１】また、一般的に、多層電極の下地電極層７
の厚さは２０〜３０μｍ程度、多層電極のＮｉメッキ層
６の厚さは２〜５μｍ程度、多層電極のＡｕメッキ層６
の厚さは２〜５μｍ程度である。In general, the underlying electrode layer 7 of the multilayer electrode
Has a thickness of about 20 to 30 μm, the thickness of the Ni plating layer 6 of the multilayer electrode is about 2 to 5 μm, and the thickness of the Au plating layer 6 of the multilayer electrode.
Has a thickness of about 2 to 5 μm.
【００２２】更に、ＡｕＳｎ多層ハンダの最下層はＡｕ
薄膜４からなり、これはＡｕメッキ層５表面の凹凸を埋
め平滑化する。前記Ａｕ薄膜４の厚さは、平滑化をする
上で５００〜１０００Å程度あれば良い。Further, the lowermost layer of the AuSn multilayer solder is made of Au.
It is made of a thin film 4 which fills and smoothes the irregularities on the surface of the Au plating layer 5. The thickness of the Au thin film 4 may be about 500 to 1000 ° for smoothing.
【００２３】本発明のＡｕＳｎ多層ハンダが使用される
基板としては、高誘電率のアルミナセラミックス等のセ
ラミックス基板が良く、その他熱伝導性に優れた窒化ア
ルミ等のセラミックス材料が好ましい。これらは同時焼
成で電極形成が行え、また高周波特性及び放熱性に優れ
る。これらセラミックス基板はテープ成形されたもの、
或いは高精度の成形が可能な粉体成形によるものであっ
ても良い。As the substrate on which the AuSn multilayer solder of the present invention is used, a ceramic substrate such as alumina ceramic having a high dielectric constant is preferable, and a ceramic material such as aluminum nitride having excellent thermal conductivity is preferable. These can form electrodes by co-firing, and are excellent in high-frequency characteristics and heat dissipation. These ceramic substrates are tape-formed,
Alternatively, it may be based on powder molding that enables high-precision molding.
【００２４】かくして、本発明は、多層電極表面が凸凹
化せず平滑性に優れ、Ａｕメッキ層からのボイドや不純
物がＡｕ−Ｓｎ合金中に拡散することがなく、その結果
高強度かつ高信頼性の接合特性が得られるという作用効
果を有する。Thus, the present invention provides a multilayer electrode having excellent surface smoothness without unevenness, without voids and impurities from the Au plating layer diffusing into the Au—Sn alloy, and as a result, high strength and high reliability. This has the operational effect of obtaining a strong bonding characteristic.
【００２５】尚、本発明は上記実施形態に限定されるも
のではなく、本発明の要旨を逸脱しない範囲内において
種々の変更をすることは何等差し支えない。It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention.
【００２６】[0026]
【実施例】本発明の実施例を以下に説明する。Embodiments of the present invention will be described below.
【００２７】（実施例）図１のＡｕＳｎ多層ハンダを以
下の工程〔１〕〜〔４〕により作製した。(Example) The AuSn multilayer solder of FIG. 1 was manufactured by the following steps [1] to [4].
【００２８】〔１〕アルミナセラミックス基板上に、下
地電極層７用のＭｏ含有ペーストを厚さ２０μｍに印刷
し、同時焼成してＭｏの下地電極層７を形成した。[1] A Mo-containing paste for the base electrode layer 7 was printed to a thickness of 20 μm on an alumina ceramic substrate and fired simultaneously to form the Mo base electrode layer 7.
【００２９】〔２〕下地電極層７上に、無電解メッキ法
により厚さ約３μｍのＮｉメッキ層６、及び厚さ約２μ
ｍのＡｕメッキ層５を連続して形成した。[2] An Ni plating layer 6 having a thickness of about 3 μm on the base electrode layer 7 by electroless plating, and a thickness of about 2 μm.
m of Au plating layers 5 were continuously formed.
【００３０】〔３〕Ａｕメッキ層５上に所望の形状のＡ
ｕＳｎ多層ハンダを形成するためのメタルマスクを被覆
し、アルミナセラミックス基板を蒸着装置にセッティン
グした。まず、厚さ０．０５μｍのＡｕ薄膜４を形成
し、次いで金属バリア層３としてＰｔを０．７μｍ形成
した。[3] A of a desired shape is formed on the Au plating layer 5.
A metal mask for forming a uSn multilayer solder was covered, and an alumina ceramics substrate was set in a vapor deposition apparatus. First, an Au thin film 4 having a thickness of 0.05 μm was formed, and then Pt was formed as a metal barrier layer 3 by 0.7 μm.
【００３１】〔４〕更に、厚さ０．２８μｍのＡｕ層１
を成膜後、厚さ０．６μｍのＳｎ層２と厚さ０．２８μ
ｍのＡｕ層１の交互層を形成し、最上層は酸化防止のた
めに厚さ約０．６μｍのＡｕ層１とした。これら全体と
して１１層積層し、また全体ののＡｕとＳｎの重量比が
Ａｕ／Ｓｎ＝７０／３０になるようにした。[4] Further, an Au layer 1 having a thickness of 0.28 μm
Is formed, and a Sn layer 2 having a thickness of 0.6 μm and a thickness of 0.28 μm are formed.
An Au layer 1 having a thickness of about 0.6 μm was formed as an uppermost layer to prevent oxidation. 11 layers were laminated as a whole, and the weight ratio of Au to Sn was set to be Au / Sn = 70/30.
【００３２】このようにして作製したＡｕＳｎ多層ハン
ダを介して、Ａｕ電極を有する光半導体素子を接合した
ところ、十分な接合強度（ダイシェア強度≧５０ｇ）が
得られた。また、その溶融断面をＳＥＭ（電子走査顕微
鏡）で観察したところ、ＰｔとＡｕＳｎ多層ハンダとの
界面にＰｔ−Ｓｎ合金層が形成され、強力に接合されて
いる事を確認した。When an optical semiconductor device having an Au electrode was joined via the AuSn multilayer solder thus produced, a sufficient joining strength (die shear strength ≧ 50 g) was obtained. Further, when the molten cross section was observed with an SEM (electron scanning microscope), it was confirmed that a Pt—Sn alloy layer was formed at the interface between the Pt and the AuSn multilayer solder, and that the solder was strongly bonded.
【００３３】[0033]
【発明の効果】本発明は最下層がＡｕ薄膜であり、Ａｕ
薄膜上に拡散防止金属層が積層され、拡散防止金属層上
にＡｕ層とＳｎ層の交互層を有することにより、多層電
極表面が凸凹化せず平滑化され、Ａｕメッキ層からのボ
イドや不純物がＡｕ−Ｓｎ合金中に拡散することがな
く、その結果高強度かつ高信頼性の接合特性が得られ
る。According to the present invention, the lowermost layer is an Au thin film,
The diffusion prevention metal layer is laminated on the thin film and the Au layer and the Sn layer are alternately formed on the diffusion prevention metal layer, so that the surface of the multilayer electrode is smoothened without unevenness, and voids and impurities from the Au plating layer are formed. Does not diffuse into the Au—Sn alloy, and as a result, high-strength and highly-reliable bonding characteristics can be obtained.
【図１】本発明のＡｕＳｎ多層ハンダＨ１の断面図であ
る。FIG. 1 is a sectional view of an AuSn multilayer solder H1 of the present invention.
【図２】従来のＡｕＳｎ多層ハンダＨ２の断面図であ
る。FIG. 2 is a cross-sectional view of a conventional AuSn multilayer solder H2.
【図３】ＡｕＳｎ共晶ハンダのＡｕ，Ｓｎの組成比及び
温度に関する状態図である。FIG. 3 is a phase diagram relating to the composition ratio of Au and Sn and the temperature of AuSn eutectic solder.
１：Ａｕ層 ２：Ｓｎ層 ３：拡散防止金属層 ４：Ａｕ薄膜 ５：Ａｕメッキ層 ６：Ｎｉメッキ層 ７：下地電極層 ８：セラミックス基板 1: Au layer 2: Sn layer 3: Diffusion preventing metal layer 4: Au thin film 5: Au plating layer 6: Ni plating layer 7: base electrode layer 8: ceramic substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｋ 3/34 ５０１ Ｈ０５Ｋ 3/34 ５１２Ｃ ５１２ Ｈ０１Ｌ 21/92 ６０２Ｄ Ｆターム(参考） 4E351 AA07 BB01 BB31 BB32 BB33 BB35 BB36 CC01 CC07 CC11 DD06 DD12 DD17 DD19 DD20 GG09 GG11 5E319 AA07 AC04 AC18 CC22 GG20──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 3/34 501 H05K 3/34 512C 512 H01L 21/92 602D F-term (Reference) 4E351 AA07 BB01 BB31 BB32 BB33 BB35 BB36 CC01 CC07 CC11 DD06 DD12 DD17 DD19 DD20 GG09 GG11 5E319 AA07 AC04 AC18 CC22 GG20
Claims (3)
溶融され固着するＡｕＳｎ多層ハンダであって、最下層
がＡｕ薄膜であり、Ａｕ薄膜上に拡散防止金属層が積層
され、該拡散防止金属層上にＡｕ層とＳｎ層の交互層を
有することを特徴とするＡｕＳｎ多層ハンダ。1. An AuSn multilayer solder which is melted and fixed on a multilayer electrode whose uppermost layer is an Au plating layer, wherein a lowermost layer is an Au thin film, a diffusion preventing metal layer is laminated on the Au thin film, and An AuSn multilayer solder having an alternate layer of an Au layer and a Sn layer on a prevention metal layer.
請求項１記載のＡｕＳｎ多層ハンダ。2. The AuSn multilayer solder according to claim 1, wherein said diffusion preventing metal layer is made of a platinum group element.
とＳｎの重量比が、Ａｕ／Ｓｎ＜８０／２０である請求
項１又は２記載のＡｕＳｎ多層ハンダ。3. The method according to claim 1, wherein the Au layer and the Sn layer are alternately formed of Au as a whole.
3. The AuSn multilayer solder according to claim 1, wherein a weight ratio of Sn and Sn is Au / Sn <80/20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11093869A JP2000288770A (en) | 1999-03-31 | 1999-03-31 | AuSn multilayer solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11093869A JP2000288770A (en) | 1999-03-31 | 1999-03-31 | AuSn multilayer solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000288770A true JP2000288770A (en) | 2000-10-17 |
Family
ID=14094475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11093869A Pending JP2000288770A (en) | 1999-03-31 | 1999-03-31 | AuSn multilayer solder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000288770A (en) |
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