JP2000277826A - Piezoelectric element and its processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic material thinner than the manufacturing limit by setting, in a recess or the like formed in the upper face of a first processing support tool, a second processing support tool a little higher than the depth of the recess or the like, and then placing a piezoelectric element to be polished to polish it using a lower and an upper lapping plate. SOLUTION: In the upper face of a first processing support tool 11, a recess or step in the shape of a ring or in other shape is formed. Then, a second processing support tool 19 in the cylindrical shape or in other shape which is a little higher than the depth of the recess or step is set inside the first processing support tool 11. Thereafter, a piezoelectric element 13 to be polished in the shape of a disc or in other shape which is as tall as the height of a part of the second tool 19 projecting out of the first tool 11 or is a little lower or higher than the projecting part is positioned. Then, the piezoelectric element is polished using an upper and a lower lapping plate. As a result, the electronic material thinner than the manufacturing limit can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to barium titanate, quartz, lithium niobate or potassium niobate used for an acceleration sensor or an angular velocity sensor.
Processing tools for processing other single crystals or piezoelectric elements such as piezoelectric ceramics or other ceramics, or silicon, gallium arsenide, or other electronic materials, optical lenses, or other substances, and the processing thereof About the method.

[0002]

2. Description of the Related Art Quartz resonators, which are a type of piezoelectric element, are used for clock generation of microcomputers for general-purpose computers, OA information equipment, and home appliances, as well as oscillation sources of the reference frequency of communication equipment and measurement equipment. Although it is diverse,
In order to improve the performance of information processing and transmission, it is required to reduce the thickness of a vibrator and increase its natural vibration frequency. In order to obtain a high-quality vibrator, it has been proposed to finish it into a lens shape, and it has been used in a relatively low frequency range.

[0003] However, as a problem in reducing the thickness of the vibrator, the production method using a double-sided lapping machine currently has a production limit of 24.0 µm (= 70 MHz). Also, when the vibrator is finished in a lens shape, it is very difficult to create a curved surface on a thin section, and there has been no example manufactured so far.

[0004]

SUMMARY OF THE INVENTION An object of the present invention is to provide an electronic material, a piezoelectric element, and a method for processing the same, which are thinner than the conventional manufacturing difficulties. .

[0005]

In order to solve the above-mentioned problems, a method for processing a piezoelectric element according to the present invention is characterized in that it is made of a super-steel, iron, hard glass, glass, or other material. A hard glass, in which a ring or square or other shape groove or step is formed on the upper surface of the processing aid 1 and a cylindrical shape or other shape is slightly higher than the depth of the groove or step. Or, super steel or iron or
A second processing aid made of other material is fitted into the groove or the step, and the first processing aid is
A disc-shaped or other-shaped polished object of a piezoelectric element, which is the same as or slightly lower than the protruding height from the upper surface of the processing aid, is provided. The lower and upper lapping plates (upper upper plate) on the lower side of the polished object and the upper wrapping plate (upper upper plate) on the first processing aid It is characterized in that an extremely thin workpiece is polished.

[0006] As a method of fixing the first processing aid to the disk-shaped or other object to be polished with the piezoelectric element, a circular shape formed on the upper surface of the first processing aid or other shapes can be used. A liquid of an aqueous solution or a viscous substance (for example, a substance such as a surfactant) is put in a groove or a step having a shape of, and the periphery of the lower surface of the object to be polished of the piezoelectric element is brought into close contact with the liquid.
The object to be polished is placed on the first processing aid, and is placed on the upper surface of the first processing aid by using the surface tension of the liquid or by freezing. Placing the object to be polished on the hydrophilic thin plate impregnated with water, and using the surface tension of water contained in the hydrophilic thin plate, or using the first processing aid In the ingredients,
By forming a plurality of holes and filling the holes with a viscous substance or another adhesive (for example, a rubber-based adhesive) such as starch syrup, honey, an adhesive bond or grease, the piezoelectric element is polished. Although a method in which the lower surface of the object is brought into close contact with the viscous substance may be adopted, the object to be polished is simply placed on the first processing aid, or the vacuum suction force is reduced. Use and adsorb. Furthermore, the first processing aid and the second processing aid, which are made of hard glass or super steel or iron or other metal,
It can be fixed using rosin, paraffin, starch paste or other adhesives, but it may not be necessary to use it after fixing.

In the piezoelectric element of the present invention, a pressure receiving surface made of a material having a piezoelectric effect, such as quartz, barium titanate, lithium niobate, or other ceramics, is formed at the center of the cylinder. A pair of electrodes is formed on the pressure receiving surface. The cylinder and the pressure receiving surface can be made of an integral material having a piezoelectric effect.

Further, the method for processing a piezoelectric element according to the present invention comprises:
Made of a material having a piezoelectric effect, from both ends of the round bar, respectively, using a grinding means, punch a cylindrical hole, at the center of the round bar, to form a pressure receiving surface of a predetermined thickness, the A pair of electrodes is provided on the pressure receiving surface to convert external air vibration into an amplified electric signal.
The grinding means forms a groove on the surface of the barrel-shaped grindstone, and by injecting compressed air or liquid into the groove, the grindstone is rotated, or using other mechanical means,
The barrel-shaped whetstone may be rotated. A barrel-shaped grindstone can also be formed using a steel ball close to a true sphere.

[0009]

Embodiments of the present invention will be described below. The present inventor has developed a new processing method classified as a grinding method, and has a 9 μm-thick uniconvex lens shape (Pl).
(ano-convex type) Quartz vibrator was successfully manufactured. Further, for the purpose of improving the performance of the crystal resonator, the relationship between the thickness and the electrical characteristics of the resonator having a thickness of 500 μm or less was investigated.

[0010] Since quartz is a hard and brittle material, applicable processing methods are mechanical lapping or chemical W.
It was thought that it was limited to et etching processing. Therefore, the grinding method is hardly used for processing the high frequency crystal resonator.

As shown in FIG. 1, the grinding method developed by the present inventor is a method using a ball grinding stone 1 in which diamond abrasive grains are electrodeposited on steel balls. That is, a quartz plate 4 is attached on a cylindrical magnet 3 attached to a main shaft 2 of an ultra-precision lathe, and a tool holder 6 provided with a seat on which a ball rides is attached to a tip of a grinding spindle 5. When this is brought close to the cylindrical magnet 3, the steel ball is attracted and held by the tool holder 6 by magnetic induction. Since the tool holder 6 is smaller than the diameter of the cylindrical magnet 3, the magnetic flux density is smaller than that between the ball grinding wheel 1 and the cylindrical magnet 3.
The space between the ball grinding wheel 1 and the tool holder 6 is larger. For this reason, the ball grindstone 1 is strongly sucked into the tool holder 6, and does not come off even when rotated at a high speed, and is strongly integrated.

The steel balls are electrodeposited and fixed with diamond abrasive grains to form the ball grinding stone 1. Since the steel balls are held by the magnetic force in the cylindrical tool holder 6, they are easily formed. The whetstone can be replaced. Moreover, since the steel balls are held by using the cylindrical tool holder 6 and the high-precision steel balls, the work of centering the grindstone 1 which is necessary at the time of replacement is unnecessary. It has a feature that the ball grindstone 1 used for the rough processing and the finishing processing can be quickly replaced. Since the movement of the ball grinding wheel 1 is controlled by the NC device, a curved surface can be created. Ball whetstone 1 made of steel balls used for ball bearings, etc.
The diameter of the diamond abrasive grains 57 to be electrodeposited and fixed is, for example, 30 μm used for rough machining, 16 μm used for medium finishing, and 4 μm used for finishing. In the case of, the diameters of the ball grinding stones 1 are different from each other by the diameter of the diamond abrasive grains 57. If the diameters of the diamond abrasive grains 57 are different,
When the ball grinding stone 1 is attracted to and held by the cylindrical tool holder 6 using the magnetic induction of the cylindrical magnet 3 on the main shaft 2 side, the diameter of the diamond abrasive grains 57 differs by the amount corresponding to each other. The center point of the ball grindstone 1 held by the tool holder 6 by magnetic force moves in the vertical direction. As a solution to this problem, as shown in FIG. 1B, the ball whetstone 1 is held by the tool holder 6.
If only the area of the holding portion 56 of the ball grindstone 1 is not fixed to the diamond grindstone 57 by electrodeposition and the ball grindstone 1 is used, as shown in FIG. Regardless of the thickness, the center axes of the vertical and horizontal χ and γ axes, particularly the vertical χ axis of the ball grinding wheel 1 are always fixed, so that the ball grinding wheel 1 for rough finishing can be used.
Even if the ball grinding stone 1 for the intermediate finishing and the ball grinding stone 1 for the finishing are exchanged for the ball grinding stone 1 for the finishing, respectively, χ, γ
As shown in FIG. 1C, the axis does not always change, so that the replacement of the ball grindstone 1 is facilitated.

The present inventor has used this processing method to obtain FIG.
As shown in (a), the Plano-convex type processing in which the holding portion 51 and the groove 52 were integrally formed was successfully performed. The curve connecting the holding portion 51 and the groove 52 is called a smooth line 53. As shown in FIG. 2 (b), the shape of the quartz crystal disk was ground at 25 μm.
The lens shape has a radius of curvature of 3 mm and a shape error of 0.1 μm or less. Heretofore, it has been considered that a crystal resonator having this shape is likely to be accompanied by sub-vibration, and cannot exhibit sufficient performance. However, as is apparent from FIG. 2C, the reactance frequency characteristic draws a sharp resonance curve and does not involve any sub-vibration, so that it is understood that it is almost ideal as a crystal resonator.

An attempt was made to produce a thinner crystal resonator, and a crystal resonator having a thickness of 9 μm and a radius of curvature of 200 mm was successfully processed. The surface was further removed by about 0.5 μm by polishing with cerium oxide, and as a result, FIG.
An element as shown in (a) was obtained. As shown in FIG. 3B, the reactance frequency characteristics of the resonance curve lack a little sharpness, suggesting that Q is slightly smaller than that of the crystal resonator of FIG. Is not accompanied at all. As a cause of the lack of sharpness of the resonance curve, it is expected that damage due to processing is inherent below the surface of the crystal unit, and the thickness of the crystal unit is reduced,
This is probably because the ratio of the thickness of the damaged layer was relatively increased. However, the characteristics can be improved by removing the damaged layer by an etching method.

Next, under the condition that the radius of curvature of the Plano-convex type is 30 mm and the thickness of the lens portion is
Tried to increase. Until it reaches a thickness of 125 μm
A sharp resonance curve without secondary vibration similar to FIG. 2 was maintained. However, beyond that, a phenomenon appeared with accompanying or no vibration.

On the other hand, as shown in FIG. 4A, a planar shape with a thickness of a vibrating portion of 27 μm or a concave lens shape (Inverted mesa type) was also manufactured. As compared with the Plano-convex type having the same resonance frequency, as shown in FIG. 4B, it can be seen that although the electrical characteristics are somewhat inferior, no secondary vibration is involved. Furthermore, when the thickness of the inverted mesa type flat plate portion was increased, a phenomenon in which no vibration occurred when the thickness exceeded 30 μm appeared. In the inverted mesa type, Plano-c in which the radius of curvature of the lens portion is infinite is used.
The quartz resonator having this shape, which is considered to be an ovex type and has a ring support, can be said to have a region exhibiting good vibration characteristics and a region where it cannot vibrate due to the thickness and curvature of the vibrating portion.

The following conclusions have been obtained by the method of the present invention. Until now, it has been considered that a favorable quartz-crystal vibrator without a sub-vibration cannot be obtained unless the shape is a Bi-convex type. However, even in the Plano-convex type, when a ring support is provided and the thickness is reduced to about 30 μm,
It has been found that a crystal resonator having ideal reactance frequency characteristics without secondary vibration can be obtained.

As described above, a result is obtained in which the performance of the quartz resonator can be expected to be improved in a thin region. But,
It was also found that when the thickness exceeds 125 μm, sub-vibration occurs or the vibration stops. FIG. 2 (a)
And a concave lens type shape (Invert) shown in FIG. 4A.
ed mesa type shape), a certain thickness,
And if it is polished to a certain radius of curvature, Pla
From the back surface forming the no-Convex type shape and the concave lens type shape, RIE processing, plasma etching,
Alternatively, a Plano-Conv using a chemical wet etching means and a single-side polishing machine, a double-side polishing machine, or other polishing means together or alone.
Processing the back of the ex-shaped shape, or the back of the concave lens-shaped shape,
Or, by polishing, extremely thin, Pla
Polishing processing of a no-Convex type shape and a concave lens type shape can be performed. The processing means shown in FIG. 1 is not limited to the Plano-Convex type shape,
ncavo-Convex type shape or Bi-Conv
Ex-shaped processing can also be performed.

The present inventor has been studying a processing method for reducing the thickness of the crystal unit as much as possible. 5 and 6 show that the diameter and thickness of the polish point are 5 mm, 76.7 μm and 10 mm, respectively.
FIG. 9 shows a reactance frequency characteristic in the case of 0 μm. According to this, it is understood that the sub-vibration exists near the frequency of the main vibration. FIG. 7 shows the reactance frequency characteristics of a crystal resonator having a thickness of 33 μm.
No sub-vibration exists in the frequency range of 5 MHz.
As shown in FIG. 8, a complicated sub-vibration is observed in a frequency region separated by about 6 MHz. FIG. 9 shows that the thickness is 31 μm.
This shows the reactance frequency characteristics of the crystal resonator of the above. There is no sub-vibration in the ± 5 MHz region of the main vibration. However, as shown in FIG. , About 8 MHz apart. From this, it can be seen that the sub-vibration departs from the frequency of the main vibration as the thickness of the crystal resonator decreases.

FIGS. 11 to 19 show an apparatus for processing an ultra-thin quartz crystal unit. In this processing equipment,
As shown in FIG. 11, on the upper surface of the first processing aid 11,
A groove or step 12 having a ring shape or a square shape or another shape is formed, and as shown in FIG. 12, a cylindrical shape or a slightly higher depth than the depth of the ring or other shape groove or step 12 is formed. A second processing aid 19 having a shape is fitted therein, and as shown in FIG.
The second processing aid 19 is fitted into the inside of the disk-shaped member, and a disk-shaped or slightly higher or slightly higher than the projection height (for example, 40 μm) from the first processing auxiliary tool 11 or A piezoelectric element to be polished in another shape, in this example, a quartz plate 13 is provided. Further, as another processing order, the following is more preferable because the distortion generated at the stage of processing the quartz plate 13 is corrected. Before placing the quartz plate 13 on the first processing aid 11, as a pretreatment, a metal such as gold or silver or aluminum is vapor-deposited on one surface of the quartz plate 13, After forming a metal coating on one side of the plate 13 or using other means, the one side of the quartz plate 13 is subjected to a surface treatment so that the front and back surfaces of the quartz plate 13 can be distinguished. For example,
When an extremely thin metal coating is formed, the crystal plate 13 is placed on the first processing aid 11 with the surface on which the metal coating is formed facing downward, and The thickness of
For example, if both sides are polished and the thickness is 40 μm,
Even at the stage of polishing to a thickness of about 20 μm, considerable distortion occurs on the polished surface of the quartz plate 13.
In order to remove this distortion, at this stage, a processing aid formed using the first processing aid 11 and the second processing aid 19, and a quartz plate being processed. 13 is taken out from the double-side polishing machine, washed well, and then, again, the surface of the metal film formed on the surface of the quartz plate 13 is turned upward, and the quartz plate 13 in the process of being processed is removed. When the quartz plate 13 is placed on the surface of the processing aid 1 and is coated with a metal coating, and the quartz plate 13 is polished from the surface, the quartz plate 13 having a thickness of 10 μm or less as a final target is obtained. It can be easily polished and the quartz plate 13
Is polished from both sides.
3 can be suppressed to a minimum the occurrence of distortion caused by polishing from one side,
Extremely thin, quartz plate 1 without changing the characteristics of quartz
3 can be polished. By the way, when the deposition is performed by using gold, the thickness of the deposition layer is 100 ° (angstrom) to 200 °, and the deposition layer can be formed uniformly on one surface of the quartz plate 13. Because you can
The thickness of the vapor deposition layer itself is a thickness that does not matter as compared with the thickness of the quartz plate 13 to be polished. By depositing a metal such as gold on one side of the crystal plate 13, even if the crystal plate 13 is processed halfway, the crystal mixed in the polishing agent such as cerium oxide. By washing the plate 13 with the abrasive and the crystal plate 13 with water, only the crystal plate 13 can be separated and taken out. Further, if the initial thickness of the quartz plate 13 is, for example, 40 μm, the thickness of about 25 μm is removed by rough processing using processing means such as RIE processing, and then, of the remaining 15 μm, If about 5 μm is polished using the processing aid described above, using a double-side polishing machine, or a single-side polishing machine, or other processing means, the above is explained. There is no need to use processing means, it is much simpler than the processing means described above,
Better. In the case of a polishing means which does not require the use of the processing aid described above, the quartz plate 13 may be polished by itself without using the processing aid.

The quartz plate 13 and the upper surface of the first processing aid 11 are usually fixed with an adhesive or polished without using an adhesive. Using an agent, on the upper surface of the first processing aid 11, on the entire surface,
When the adhesive is applied and attached, in the case of a thin plate (for example, a thickness of 10 μm) or a quartz plate, the quartz plate 13 receives a strong external stress due to a contraction force when the adhesive hardens. As a result, the electrical characteristics of the crystal plate 13 are reduced, and the characteristics of the crystal plate 13 are lost, so the adhesive is applied to the entire lower surface of the crystal plate 13 by applying an adhesive. Cannot be performed. Therefore, as shown in FIG. 14, a circular or other shape formed on the upper surface of the first processing aid 11 ', pure water is put in the groove 14, or rosin or other adhesive is applied. Put the crystal plate 13 on the pure water so that the periphery of the lower surface of the crystal plate 13 is in close contact with the pure water, use the surface tension of water, freeze the water, or use rosin or other resin. Using an adhesive, vacuum suction, or the like, the first processing aid 11 ′ is formed in a circular shape or other shape formed on the upper surface, using only a part of the outer peripheral portion of the groove 14, 1 processing aid 1
1 ′ and the crystal plate 13 can be fixed.

As another example, as shown in FIG. 15, the second processing aid 1 is not used without using the first processing aid 11.
The crystal plate 13 can also be polished using only 9.

Further, as another example, as shown in FIG. 17, a plurality of holes 16 are formed in the first processing aid 11, and two or three holes 16 are appropriate. This hole 16
By filling a viscous substance such as starch syrup, honey, an adhesive bond or grease or other adhesive, the lower surface of the quartz plate 13 is brought into close contact with the viscous substance, and the first processing aid 11 and The crystal plate 13 is spotted and fixed only by the area of the hole 16. Alternatively, vacuum suction may be used using holes 16. Note that the arrangement of the holes 16 is as shown in FIG.
As shown in FIG.
As shown in (b), they may be arranged concentrically, but are not limited to these examples. Also, using the hole 16 formed in the first processing aid 11, the first processing aid 11 and the quartz plate 13 are separated by using the area of the area of the hole 16, In the case where the first processing aid 11 and the crystal plate 13 are spotted and fixed to only a part, the second processing aid 19 may not be used. In addition, the crystal plate 13 is
Is used by adsorbing it on the upper surface of the processing aid 11 ′, since a double-side polishing machine cannot be used structurally, the structure uses a single-side polishing machine. However, a drawing of a structure in which the upper surface of the processing aid 11 'is sucked by vacuum suction is omitted.

As shown in FIG. 16A, the first processing aid 11 is connected to the upper lapping plate 18 as shown in FIG.
(Upper upper plate) and lower wrapping plate 17 (Lower upper plate), two upper and lower wrapping plates 17 and 18 are used. Then, the upper lapping plate 18 is formed with a groove or a step 12 having a ring shape, a quadrangle shape, or a hexagonal shape, or another shape. The workpiece is polished. In addition, the first processing aid 1
1 is manufactured by using metal such as super steel or iron or hard glass which is difficult to grind, and the second processing aid is made of metal such as hard glass or super steel or iron When manufactured, the upper lapping plate 18 made of metal such as iron is polished with the first processing aid 11 made of iron or the like, and the lower lapping plate 17 is made of hard glass or The second processing aid 19 made of a metal such as super steel or iron and the quartz plate 13 are processed or, as shown in FIG. 16B, described in FIG. The means is the reverse of the second processing aid 1
9 and the quartz plate 13 are arranged, and the upper wrapping plate 1
At 8, the second processing aid 19 and the crystal plate 13 may be polished, and the first processing aid 11 may be polished using the lower lapping plate 17.

FIGS. 18 and 19 show the state of FIG.
3, a quartz plate 13 formed by using the first processing aid 11 and the second processing aid 19 and formed by polishing using the processing aid, The figure shows a polished shape. The reason why the shape of the quartz plate 13 shown in FIG. 18 is different from the shape of the quartz plate 13 shown in FIG. 19 is as follows.
The processing aid is manufactured using a material different from the material used for manufacturing the processing aid 19 of FIG. 19 and the material forming the second processing aid 19 shown in FIG. That's why. However, only when using a wrapping plate with a suede (pad or buff),
In the case of a tin-plate wrapping plate made of iron or tin, etc. (However, when a tin-plate wrapping plate is used, cerium oxide, diamond, GC, etc. The second processing aid 19 shown in FIG. 18, which has the same shape as that of FIG. 18, is made of quartz having a hardness almost equal to the hardness of the quartz plate 13. The second processing aid 19 is manufactured by using hard glass, which is the raw material of the second processing aid 19, as shown in FIG.
Manufactures the second processing aid 19 using plastics or hard metal, such as super steel or iron, which is harder to grind than the quartz plate 13. Depending on the difference. However, the condition is that cerium oxide or another abrasive is used as the abrasive. The reason is that when an abrasive such as cerium oxide is used, the quartz plate 13 and the hard glass are made of the same quartz, and therefore, when cerium oxide is used, both can be polished well. However, metals such as super steel or iron can hardly be polished using cerium oxide, however, such as cerium oxide,
If an abrasive is used, the quartz plate 13 can be polished well, so the polishing process of the second processing aid 19 made of metal such as super steel or iron is performed by polishing the quartz plate 13. This is because it can be delayed more than processing.
This difference is the reason why the shape of the quartz plate 13 shown in FIG. 18 is different from the shape of the quartz plate 13 shown in FIG. The dimensional diagram of the completed quartz plate 13 shown in FIG. 19 is such that the quartz plate 13 shown in FIG. 19 is shown in the figure more than the quartz plate 13 shown in FIG. In addition, since the thickness of FIG. 19 can be made thinner than that of FIG. 18 with a thickness of about 5 μm, there are the following advantages. By manufacturing the second processing aid 19 using a metal such as a super-steel, the crystal plate 13 is lower than the height of the second processing aid 19 by several μm, for example, about 5 μm ( Since it can be processed thinly, even if polishing is performed using a double-side polishing machine,
The crystal plate 13 does not come off the second processing aid 19 and is not damaged. A large-diameter crystal plate 13 having a diameter of 1 inch to 2 inches or more can be processed. After RIE processing or other chemical wet etching processing, removing the damaged layer of 0.2 μm to several μm uneven surface, polishing the mirror surface and using it for correction processing Can be done. A very thin quartz plate 13 (for example, a thickness of about 5 μm) can be polished. Although the means shown in FIG. 19 can process the extremely thin quartz plate 13 more than the means shown in FIG. 18, even if the means shown in FIG. 18 is used,
Either method may be used because the processing can be made extremely thin. In order to fix the second processing aid to the first processing aid, an adhesive that melts at a low temperature, such as rosin or paraffin, is used to fix the second processing aid to the first processing aid. When the tool is fixed, even if the crystal plate 13 is simply placed on the upper surface of the first processing aid without using an adhesive, the polishing is completed by the effect of watering, and the crystal plate is finished. When removing 13 from the first processing aid, 70 ° C.
Before and after, the processing aid is heated, a rod is inserted from the hole 64 in the direction of the arrow shown in the figure, the second processing aid is pushed up, and the first processing aid is When the second processing aid is detached, the crystal plate 13 placed on the upper surface of the first processing aid can also be easily detached from the first processing aid. Since the outer portion, which is the outer peripheral portion of the crystal plate 13, does not cause peripheral sag, the thickness of the central portion and the thickness of the outer peripheral portion are the means shown in FIGS. 18 and 19. By using hard glass and super steel, there is an advantage that peripheral sag is eliminated, parallel accuracy is good, and there is no variation in parallel accuracy, so that the yield is improved.

Another important point in performing the above-mentioned polishing process is that when performing the polishing process, usually, a lapping plate on which a suede or a nonwoven fabric (hereinafter, referred to as a suede) is stuck on both sides. 17,
In the case of manufacturing a quartz plate 13 having a concave lens shape as shown in FIG. 19, for example, one surface is made of a metal plate such as iron, as shown in FIG.
The other side is polished using a lapping plate 18 on which a suede is pasted, so that the upper lapping plate 18 has a suede as shown in FIG. The lower lapping plate 17 is made of a metal plate such as iron using a lapping plate 18 and is polished to form a metal such as super steel or iron. The back surface of the first processing aid 11 is made of a metal plate, and is polished using a lapping plate 17. The metal plate forming the wrapping plate 17 is used. And the hardness of the metal forming the first processing aid 11 are made substantially equal, so that the first processing aid 1
The back surface of the upper lapping plate 18 is set under the conditions that the polishing process is difficult to perform as much as possible.
When a polishing process is performed using a suede, the finished accuracy of the crystal plate 13 can be easily increased. In addition, since the quartz plate 13 having the shape shown in FIG. 19 can be polished by using a double-side polishing machine, the reproducibility or accuracy of the finished quartz plate 13 is extremely high. There is also an advantage that a large amount of precision quartz plates 13 can be produced at low cost.

Although not shown in the drawings, the processing auxiliary tool formed by using the first processing auxiliary tool and the second processing auxiliary tool as the polishing means described above is used. As another method of use, even if a single-side polishing machine, or another polishing machine, which is a machine other than the double-side polishing machine, is used, the flat plate shape or the figure shown in FIGS. The concave lens-shaped quartz plate 13 having the shape shown in FIG. 26 can be polished easily and in large quantities.

Further, using the processing aids formed by using the first processing aid 11 and the second processing aid 19, the quartz plate is formed into a shape as shown in FIG. 13
When polishing using a double-side polishing machine or a single-side polishing machine, using a processing means as shown in FIG. 25 or FIG. 32, a concave lens shape or a flat plate shape is used in advance. 26, the quartz plate 13 is ground into a concave lens shape as shown in FIG. 26, or the grinding process is performed, or the center portion of the quartz plate 13 is masked, and only the center portion is Laser irradiation such as an excimer laser is performed, and only the central portion of the crystal plate 13 having an initial thickness of, for example, 40 μm is removed by, for example, one heat irradiation pulse to remove a processed layer of about 0.1 μm. , In total,
A heat irradiation pulse of about 200 pulses is performed, and FIG.
Is processed using a laser to form a concave lens shape (inverted MESA type) having a depth of, for example, about 20 μm, or is formed of hydrofluoric acid, ammonium chloride, or the like. Using a chemical, the crystal plate 13 is chemically wet-etched, and only the center portion of the crystal plate 13 is processed into a concave lens shape, or ion milling using a fluorine-based gas or the like. Or a crystal plate 1 using a processing means such as plasma etching.
3. Only the center part is processed into a concave lens shape,
Or, using a processing means such as sanding, or using other processing means, after processing the quartz plate 13 into a concave lens shape, as a subsequent processing step, processed into a concave lens shape, The crystal plate 13 is polished by using a processing aid as shown in FIG. 13, or without using a processing aid as shown in FIG. As shown, the carrier 37 is directly used, and the carrier 37 is used for the crystal plate 13.
Assuming that the crystal plate 13 is in a planetary motion, and a double-side polishing machine is used to perform a finishing and polishing process for removing a work-affected layer formed on the crystal plate 13 using a double-side polishing machine. 26, it is possible to produce a large number of highly accurate concave lens-shaped or flat-plate-shaped quartz plates 13 in a short time as shown in FIGS. 45 and 46.

As shown in FIGS. 20 and 21, the upper and lower wrapping plates 17 and 18 are rotated together with the supply of the slurry (free abrasive grains), so that the carrier on which the first processing aid 11 is placed is placed. 37, sun gear 3
9 and the internal gear 38, the processing aid 11 revolves around the sun gear 39, and rotates and rotates in a planetary motion. When the other side of the first processing aid 11 is polished using the upper lapping plate 18, the extremely thin quartz plate 13 can be easily polished. can do. When a single-side polishing machine is used, the quartz plate 13 can be polished by the same means as the above-mentioned polishing means.

Further, after processing the extremely thin quartz plate 13 by the above means (for example, when the thickness is 10 μm)
Then, since the crystal plate 13 is extremely thin, it is difficult to handle it, and it is difficult to form electrodes on the crystal plate 13. Therefore, as shown in FIG. At the center of the fixing frame 48 made of non-insulating material,
3 is set, and the crystal plate 13 is fixed to the fixing frame 48 using an extremely thin gold wire 49 (for example, about 18 μm) using a bonding machine. The crystal plate 13
After being fixed to the fixing frame 48, as shown in FIG.
As shown in the figure, when the entire surface of the crystal plate 13 is lifted from below or by other means, the slackness of the gold wire 49 is corrected, and the gold wire 49 is brought into a linear state. Good.
Also, what is shown in FIG. 22 is that when the crystal plate 13 is fixed to the fixing frame 48 from at least three directions by using the gold wire 49 by the means as shown in FIG. When the crystal plate 13 is fixed in the air using an extremely thin gold wire 49, the vibration of the crystal plate 13 is absorbed by the gold wire 49. The characteristics can be enhanced to the utmost.

Further, as shown in FIG. 23, the quartz plate 13 is fixed to a fixing frame 48 using a gold wire 49, and then, as shown in FIG. In order to provide the electrodes, only a very small portion of the central portion of the quartz plate 13 is deposited using gold or the like, and then a bonding machine is attached to the deposited central portion of the quartz plate 13 from both sides. By using the gold wire 49, a connection is made between the quartz plate 13 and the fixing frame 48, and the gold wire 49 is
By using the electrode 50 attached to the center of the quartz plate 13 and using it as an electrode 50, the center of the quartz plate 13 is compared with an electrode conventionally used (for example, an electrode formed by vapor deposition on the front and back of the quartz plate). Only the part is extremely thin gold wire 49 (18
(approximately μm) can be used to form the electrode 50, so that the characteristics of the crystal are not reduced.

FIG. 25 shows an apparatus for manufacturing a quartz plate 13 having a concave surface on one side. In FIG. 25, 11 is the first
, A reference numeral 19 denotes a second processing aid, and 41 denotes a low-speed rotation of the processing aids 11 and 19 (for example, 100 to 300 rpm).
m), a motor 43 for rotating the polishing tool 44 at a high speed (for example, 5000 rpm). As the polishing tool 44, a soft tool such as a felt, a cotton swab, a buff or the like is used, and a polishing agent such as cerium oxide, GC, or diamond is used to polish about 1 μm per minute. As shown in FIG. 26, a disk-shaped crystal plate having an initial thickness of about 40 μm is finished into a concave lens-shaped crystal plate 13 having a thickness of 10 to 2 μm at the center. Also, the quartz plate 13 can be processed into a concave lens shape by using an apparatus having a structure as shown in FIG. 25. The polishing tool 44 used in this case is a diamond abrasive. By using a polishing tool 44 made of electroplated foil, the quartz plate 13 can be easily processed into a concave lens shape. Then, when the finishing process of the quartz plate 13 after processing into the concave lens shape is polished using a double-side polishing machine or a single-side polishing machine, as shown in FIG. The quartz plate 13 having a concave lens shape can be polished and finished.

As the processing aid, in addition to the structure shown in FIG. 25, as shown in FIGS. 27, 28 and 29, quartz, super steel, plastics, quartz, glass or other metal plates are used. Then, the flat-plate-shaped processing aid 11a or the processing aid 11b shown in the drawing is manufactured,
Alternatively, the part shown in black is formed by forming an adhesive layer 59 using rosin, paraffin, or the like, and fixing the quartz plate 13 having a flat plate shape or a concave lens shape to a processing aid. The quartz plate 13 and the processing aid are integrated with the crystal plate 13 and the processing aid using a double-side polishing machine (lapping machine) shown in FIG. If the quartz plate 13 is polished with a configuration in which the tool is polished and the other one surface, the lapping plate 18 polishes the quartz plate 13 and then peels off the quartz plate 13 from the processing aid, Regardless of the thickness of the carrier 37 used in the lapping machine, the quartz plate 13
Is a means of performing single-side polishing using a double-side polishing machine, capable of performing extremely thin processing with high precision, capable of performing double-side polishing, or using a single-side polishing machine, or Polishing by operation may be performed, or other polishing means may be used. Further, a processing aid 11 used for attaching a quartz plate 13 for polishing.
As a material for producing a, 11b, and 11c, a processing aid 11a using quartz, which is a material having the same thermal expansion,
When manufacturing 11b and 11c, rosin, paraffin, A
70 ° C when pasting using garose etc.
To about 100 ° C., the processing aids 11a, 1
1b and 11c, the crystal plate 13 has the same coefficient of thermal expansion. Therefore, even if the crystal plate 13 is heated from 70 ° C. to 100 ° C. or rapidly cooled to room temperature, stress is generated on the crystal plate 13 Will not occur. Using quartz glass, which is a material having substantially the same coefficient of thermal expansion as quartz, processing aids 11a,
11b and 11c may be manufactured, but it is better to manufacture the processing aids 11a, 11b and 11c using a crystal having the same thermal expansion coefficient as the quartz plate 13 as much as possible.
The structure of the processing aid 11b shown in FIG. 28 is better than that of the processing aid 11a shown in FIG.
(Shaded portion) is formed by the processing aid 11a.
Is applied to the entire back surface of the quartz plate 13 to fix the crystal plate 13 to the processing aid 11a, whereas in the case of the shape of the processing aid 11b, the quartz plate 13 is An adhesive layer 59 is formed on the side wall of the quartz plate 13 to fix the quartz plate 13 to the processing aid 11b.
By fixing the crystal plate 13 to the processing aid 11b, the side wall of the crystal plate 13 can be protected and the adhesive layer 59 does not exist between the processing aid 11b and the crystal plate 13. The close contact allows highly accurate polishing of the quartz plate 13.

Further, the structure shown in FIG.
When the processing aid 11c having the structure of the processing aid 11c in which the groove 52 is formed using quartz, quartz glass, or super steel as the processing aid 11c, the processing aid shown in FIG. 28 is used. It is still better than 11b in the following points. Quartz plate 13 with flat plate or concave lens shape
Is very thin, from about 10 μm to about 80 μm. The use of the processing aid 11 c having the groove 52 formed thereon allows the thickness of the adhesive layer 59 to be increased. This is because the crystal plate 13 also has a structure in which the crystal plate 13 can be fixed to the processing aid 11c using the side wall of the crystal plate 13. The structure of the processing aid 11c is a structure in which the thickness of the adhesive layer 59 can be increased arbitrarily.
Even if the crystal plate 13 is extremely thin,
1c.

Next, as an application example of the piezoelectric element of the present invention,
The acoustic-electric converter will be described. Conventionally, seismic exploration and prediction include ocean observation, underground structure exploration, geomagnetic observation, observation by GPS, and measurement of the movement of the earth's core by laser measurement of the distance between two points. Observing the vibration of air due to an earthquake or tsunami is another predictive method.

As a means for converting the vibration of air into an electric signal which can be easily recorded and analyzed, there is a sound collecting microphone. However, noise is easily picked up, and it is difficult to detect a sound wave having a desired frequency.

FIGS. 30A to 30E show embodiments of an acoustic-electric converter using the piezoelectric element of the present invention. A cylinder 21 made of a material having a piezoelectric effect, such as crystal or barium titanate or other ceramics
Alternatively, the pressure receiving surface 22 is formed in the center of the cylinder 54, and a pair of electrodes 23 and 24 are formed on the pressure receiving surface 22.
Amplifier 25 for measuring the induced voltage between 3, 24
Are connected. (Only the electrodes 23 and 24 and the amplifier 25 are shown in FIG. 30A). 30A is a biconvex lens (bi-comvex) type, FIG. 30B is a biconcave lens type, FIG. 30C is a planar type, FIG. (plano-convex) type. As shown in FIG.
Is sealed using two pieces, and the inside of the cylinder 21 is sealed.
A chamber is formed, the inside of the cylinder 54 is sealed, and a chamber B is formed,
The left and right cylinders 21 of the cylinders 21 and 54 both have a structure in which the inside of the cylinder 21 is sealed and the inside of the cylinder A is sealed, and the inside of the cylinder 54 and the inside of the chamber B are both decompressed (preferably in a vacuum state). And the cylinder 54 catches vibrations in the horizontal axis direction and the vertical axis direction, and forms the pressure receiving surface 22 formed in the center portion of the cylinder 21 and the cylinder 54, when the cylinder 21 and the cylinder 54 are not formed. In comparison, the pressure receiving surface 22 has a structure that catches vibration more strongly. In addition,
For the above reasons, the smaller the diameter and the longer the length of the cylinders 21 and 54 are, the more the vibration from the outside is generated by the pressure receiving surface 2.
2 is easy to receive, so that a highly accurate pressure sensor can be made. In addition, when not depressurizing the insides of the chambers A and B, it is preferable to inject an inert gas.

FIG. 31 is a top view shown in FIGS. 30 (a) and 30 (e). The vibrated vibration caused the cylinder 21 and the cylinder 54 to vibrate from the portion A to the portion B or from the portion B to the portion A shown in FIGS. 30 (a) and 30 (e). Vibration
By freely moving from both ends, the cylinder 21 and the cylinder 5
Vibration (vibration of part A,
Vibration caused by vibrating the portion B) is caused by the cylinder 21 and the cylinder 54
By freely moving from both ends, the vibration that vibrated the portion A and the vibration that vibrated the portion B resonated in the center portion, causing a resonance phenomenon, and When the space portion 47 is not formed, the pressure receiving surface 22 formed in the center portion is vibrated stronger than the space portion 47 by comparison.

Next, a method of forming the pressure receiving surface 22 will be described. Basically, as shown in FIG. 32, quartz or barium titanate, lithium niobate or other ceramics, and other materials having a piezoelectric effect,
A round bar 30 made of a material is attached to a chuck 31 of a processing machine such as a lathe.
A processing tool 33 having a grindstone 32 with a diamond stone attached to the surface of a metal ball and a rotatably provided grinding wheel 32 at the tip is gripped by a tool holder 34. Whetstone 32
As shown in FIG. 33, is a sphere whose opposing surface is cut,
It is rotatably mounted. On the peripheral surface of the whetstone 32,
FIG. 34A is an enlarged cross-sectional view of FIG.
As shown in (b), a V-shaped groove 32a is formed, and one of the inner walls of the groove 32a has a directionality included in a plane passing through the center of the grindstone 32. This whetstone 32
Is rotated at high speed (preferably 8.000 to 50.000 rpm) by a jet stream of air, which is tangentially jetted from the air nozzle 40 to the peripheral surface of the grindstone 32,
Take the surface to be ground slowly (for example, 1μ
m) Sharpening. During this grinding, from the fountain nozzle 41
Water is injected to cool the grindstone 32 and discharge shavings. When the grindstone 32 is driven to rotate, the round bar 30
As shown in FIG. 2, a circular or cylindrical hole is formed by the grindstone 32 driven to rotate around the axis. As another method of using the grinding or polishing means described above, the use of a grindstone 32 ″ as shown in FIG. The shape shown in FIG. 4 or another shape can be applied to grinding or polishing.

When the polished surface of the pressure receiving surface 22 is convex,
As shown in FIG. 36 ((a) is a front view and (b) is a plan view), a drum-shaped whetstone 32 'is used. When the polished surface of the pressure receiving surface 22 is flat, a flat grindstone 32 ″ as shown in FIG. 36C is used. Alternatively, as shown in FIG. 37, a grindstone 32 having a diameter much smaller than the hole diameter. Using
The same as the machining tool 33 shown in FIG.
The grindstone 32 is rotated while moving the machining tool 33 given along with the NC device or the like along the curved surface of the pressure receiving surface. At the same time, the pressure receiving surface is machined while rotating the chuck 31 and the round bar 30. Also, if a grindstone 32 ″ having a shape as shown in FIG. 36D is used as a means for forming the hole or the space portion 47, the holding portion 47 is easily left,
Holes or space portions 47 can be machined. Also, as a means for forming the hole or the space portion 47, it is possible to form the hole or the space portion 47 by using a drill which is electrodeposited with ordinary diamond.

For machining a circular hole, a tool rotating around a normal axis can also be used. A spherical grinding wheel as shown in FIG. 38 and a disk grinding wheel as shown in FIG. Can be used. When the grinding process is completed using the grindstone 32, a polishing grindstone 32 ″ ″ for polishing having the same structure as the grindstone 32 is manufactured using a material such as felt or buff, When the grinding wheel 32 "" is replaced with the grinding wheel 32 "" and the grinding is performed using the grinding wheel 32 "",
Finish processing is possible. Made of felt or buff,
The means for rotationally driving the grinding wheel 32 "" is the same as the means for rotating and driving the grinding stone 32, and the felt or buff is formed with grooves 3 in the felt or buff.
If 2 (a) is formed and the air nozzle 40 is used to perform the rotation drive, the polishing can be easily performed.

FIGS. 40 and 41 show the state of FIG.
FIG. 4 is a production drawing of a grinding and polishing apparatus having the structure shown in FIG. The diameter of the whetstone 32 actually manufactured is 20 mm
The depth of the groove 32 (a) is 1 mm, and the number of grooves is 16
Air nozzle 4
From 0, the air pressure jetted in the tangential direction to the peripheral surface of the grindstone 32 and the rotational speed of the grindstone 32 are obtained by
The number of rotations is the following number. When the air pressure is 0.5 atm, the rotation speed of the grindstone 32 is approximately 12.200 rotations. When the air pressure is 1.0 atm, the rotation speed of the grindstone 32 is approximately 22,000 rotations. When the air pressure is 2.0 atm, the rotation speed of the grindstone 32 is approximately 37.500 rotations. When the air pressure is 3.0 atm, the rotation speed of the grindstone 32 is approximately 47.800 rotations. When the air pressure is 4.0 atm, the rotation speed of the grindstone 32 is about 5 which is the limit that the bearing can withstand.
This is the number of revolutions of 0.000 revolutions.

In the grinding and polishing apparatus having the structure shown in FIGS. 40 and 41, a metal such as iron, aluminum, or copper, or a buff or
36. A polishing grindstone 32 ″ ″ (e) shown in FIG. 36 is made of felt, glass, plastic, ceramics, or another polishing material, and the polishing grindstone 32 ″ ″ (e) is formed. , As an abrasive, diamond paste or cerium oxide or alumina or GC or
Using other abrasives, a crystal is formed into a shape as shown in FIGS. 2A, 3A and 4A by using the processing method shown in FIG. Such as a piezoelectric material,
Grinding and polishing are performed simultaneously. Grinding and polishing can be performed simultaneously because the rotation speed of the grinding wheel 32 "" (e) is limited to the rotation speed up to 50.000 rotations, which is the limit that the bearing can withstand. Since the grinding wheel 32 "" (e) can be easily driven, the polishing process can be performed efficiently and in a very short time only by the polishing process. With a piezoelectric material such as this, two processes of grinding and polishing can be performed simultaneously using a polishing grindstone 32 ″ ″ (e) made of felt, buff, iron, or the like.

FIG. 42A shows an angular velocity sensor or a piezoelectric plate 57 made of a piezoelectric material such as lithium niobate or potassium niobate for manufacturing the angular velocity sensor. A thick plate of the piezoelectric plate 57, for example, a thick plate of about 350 μm, and a thin piezoelectric plate 57, for example, a plate of about 25 μm, are formed by using an adhesive layer 59 made of an insulator. 2 shows a piezoelectric plate 57 which is bonded and plywood.

FIG. 42B shows a circular plate having a diameter of about 3 mm on the center of the thick plate of the piezoelectric plate 57 by using the processing means shown in FIG. , Processed into a concave lens shape (Inverted mesa type), the thickness was set to 25 μm, and the adhesive layer 59 was sandwiched.
This example shows a case where the processing was successful, which was used for an electrostatic capacity type angular velocity sensor and had a total of 50 μm. Although this lithium niobate or potassium niobate is a material that is very difficult to process, if the processing means shown in FIG. 1 is used, the material is not affected by heat and can be processed with high accuracy. It can be easily processed. In the case of lithium niobate, processing is difficult because the allowable temperature difference is a temperature difference within 20 ° C. or the allowable temperature difference is not allowed.

FIG. 43 (a) shows the quartz plate 1
3 is coated with a resist and masked to form a metal film or a film made of another material.
3 with a mask, using hydrofluoric acid, etc.
Chemical wet etching, or _C 2 _{F 6} or CHF ₃
Using fluorine-based gas or chlorine-based gas such as
At the center of the quartz plate 13 that has been processed or etched by using other chemicals, for example, into a concave lens shape (inverted MESA shape) having a diameter of 1.5 mm,
The shape of the quartz plate 13 formed by performing a chemical wet etching process or an RIE process is illustrated. Quartz plate 13 or other piezoelectric material, such as hydrofluoric acid,
When an etching process is performed using a chemical, the shape of the outer peripheral portion, which is indicated by diagonal lines, becomes a square shape (floor digging shape). The drawback of forming an electrode is that it is difficult to form an electrode, which is a disadvantage of the chemical wet etching process. Also, in the case of RIE processing, although it does not form a square shape, it is almost perpendicular to the etched surface, so even in the case of RIE processing, electrodes are formed using evaporation. There is a disadvantage that it is difficult to do.

FIG. 43B shows the state of FIG.
In order to correct the disadvantages of the chemical wet etching process described in (a) and to remove the process-damaged layer generated by the RIE process, as shown in FIG.
Using a double-side polishing machine, for example, the upper wrapping plate 18 uses a wrapping plate with a suede 15 attached thereto, and the lower wrapping plate 17 uses a metal wrapping plate such as a tin plate or iron. 43, or using a lapping plate 17 and a wrapping plate 18 on both sides of which a suede 15 is stuck, and etching the quartz plate 13 into a concave lens shape as shown in FIG. The concave lens shape portion of the above, using a suede 15, using a polishing agent 65 such as cerium oxide, diamond, GC,
The polishing process can form a smooth line 53 as shown in FIG.
Is the advantage. Further, the second advantage is that the abrasive 65
Inside the concave lens shape, upper and lower wrapping plates 17
And 18, the inside of the concave lens shape can be polished steadily and stepwise using the upper lapping plate 18 to accumulate, and the lower lapping plate 17 Since the front and back surfaces forming the concave lens shape can be simultaneously polished from both surfaces, it is extremely thin, for example, as thin as 0.5 μm (natural vibration frequency about 3 GHz). Even if the quartz plate 13 is polished, the thickness of the holding portion 51 can be maintained in the range of 40 μm to about 30 μm. Without difficulty in maintaining strength and handling. Further, a third advantage is that
Using a double-side polishing machine, a concave lens shape can be polished. The above three advantages are due to the chemical We
Chemical wet etching and polishing (mechanical polishing) using both t-etching and a double-side polishing machine, a single-side polishing machine or other polishing means.
Or chemical wet etching / polishing
It is born from processing means that combines etching (chemical wet etching). When the concave lens-shaped quartz plate 13 shown in FIG. 43 (a) is polished by using the suede 15 using a double-side polishing machine, it depends on the pressure applied to the lapping plate. A vibrating portion having a concave lens shape having a step of about 30 μm can be mechanically polished.

FIGS. 44 (a), (b), (c) and (d)
FIG. 13 shows a processed surface in which a concave lens shape is formed on the quartz plate 13 using RIE processing, or plasma etching, or chemical wet etching, or other means. The crystal processing board 13 is held by using the processing aid 11 formed by using the first processing aid 11 and the second processing aid 19, and the second processing aid 19 is Using a processing aid 11 made of hard glass or the like made of steel or quartz, one surface is a back surface of a quartz plate 13 processed into a concave lens shape, and the other surface is a processing aid 11 20 and 21, using a double-side polishing machine, or a single-side polishing machine, or other processing means, from the upper and lower, both sides simultaneously polishing state Is shown. FIG. 44D shows a completed dimensional diagram. When polishing the quartz plate 13 having the concave lens shape using a single-side polishing machine, the surface having the concave lens shape is processed by the processing aid 1.
1 or by directly attaching the concave lens-shaped surface to a ken (polishing machine) using an adhesive or the like, or by using other means. When the back surface with the concave lens shape formed is polished using a single-side polishing machine, the extremely thin quartz plate 13 can be easily polished.

The operation shown in FIG. 44 will be described in order as follows. FIG. 44A shows that the quartz plate 13 has R
A concave lens shape having a depth of 15 μm is formed by using IE processing or chemical wct etching means. FIG. 44B shows a state where the concave lens shape is formed by using the processing aid 11 shown in FIG. 13 and the quartz plate 13 is held by using the processing aid 11. are doing. FIG. 44C shows a state where 59.5 μm is shaved off by using a mechanical polishing means. In this case, only by mechanical means, 59.5μ
When all of m are removed, distortion occurs in the quartz plate 13. First, a thickness of about 59.0 μm is chemically reduced using an etching means such as RIE processing or plasma etching. If the remaining about 0.5 μm is scraped off using a mechanical polishing means after being scraped off using any means, no distortion is generated.
The affected layer generated by the IE processing can be removed. FIG. 44 (d) shows the final stage.
Again, fine adjustment is corrected using wet etching, and the process is completed.

FIG. 45 or FIG. 46 shows the base of the quartz plate 13 mechanically polished to a thickness of 1.0 μm and a thickness of 80 μm.
As shown in (b), 62 μm is removed by RIE processing or wet etching processing, and thereafter, FIG.
As shown in FIG. 5C and FIG. 45D, RIE processing or other chemical etching processing is performed using the processing aid 11 and a double-side polishing machine or a single-side polishing machine. By performing mechanical polishing of the irregularities of several μm, for example, 6 μm generated by performing the above, processing the quartz plate 13 with high accuracy and extremely thin, for example, inside and outside 10 μm. Is shown. In the final finishing step, if RIE processing is not used as much as possible and chemical wet etching processing or mechanical polishing processing is used as the final finishing processing, the electrical characteristics of the crystal plate 13 do not decrease, The electrical characteristics of the crystal plate 13 are good. Also, a very thin (thickness of about 14 μm) quartz plate 13
If the quartz plate 13 is processed using mechanical polishing, using chemical wet etching using hydrofluoric acid, NH ₄ HF ₂ , or NF,
Chemical Wet Etc even after removing several μm from both sides
There is an advantage that a pinhole (hole), which is a drawback of hin, cannot be formed. When the thickness becomes about 10 μm or less, a pinhole is formed immediately after processing using chemical Wet Etching.
This is because it is a disadvantage of hin.

The first processing aids 11 and 11 ″ shown in FIGS. 45 (c) and 46 (c) are manufactured using a metal such as iron, and the second processing aids are used. It is good to manufacture using metal, such as super steel, as 19. Moreover, as a grinding | polishing machine, you may use a single-side grinding machine, a double-side grinding machine, an ultrasonic grinding machine, or other grinding | polishing. A processing machine may be used. Further, as a means for fixing the quartz plate 13 to the processing aid 11 or 11 ″, a hole 16 formed in the processing aid 11 or 11 ″ may be used.
The structure may be such that the quartz plate 13 is sucked on the surface of the processing aid 11 or 11 ″ by vacuum suction in the direction of the arrow shown in the drawing. In addition to using a single-side polishing machine, in order to make the crystal plate 13 attract, the quartz plate 13
Cannot be mechanically polished by adhering to the processing aid 11 or 11 ″. However, the crystal plate 13 is attached to the upper surface of the processing aid 11 or 11 ″ using vacuum suction. The structure for adsorbing is omitted from the drawings.

FIG. 45 or FIG. 46 will be described in the order of machining, based on the results of experiments actually performed. As shown in FIG. 45 (b) and FIG. 46 (b), R
When 62 μm is removed by the IE processing, first, a deteriorated layer or unevenness in the range of 1 μm to 6 μm is generated. The cause of the generation of the unevenness is processing before the RIE processing. ), The thickness is 80 μm
Then, the very small scratches (for example,
Second, the ion particles formed by the RIE process repeatedly collide with the extremely small impurities contained in the quartz plate 13 to produce very small scratches and very small impurities. Are irregularities enlarged by the collision of ion particles. In addition to the unevenness, a deteriorated layer is formed by RIE processing. The surface of the quartz plate 13 has a thickness of 0.1 mm at a high temperature due to collision of ion particles.
In order to dissolve inside and outside 2 μm to 1 μm, it becomes quartz, becomes a single crystal of silicon, or combines with the used ionic particles to form a compound, or becomes an oxide, and becomes amorphous, Become amorphous and crystal plate 13
Crystallinity is lost. The first processing aid 11 or the first processing auxiliary tool 11 for the purpose of removing irregularities inside and outside of 0.2 μm to 6 μm by mechanical polishing, for the purpose of removing the deteriorated layer due to the above two causes. 11 "and the second processing aid manufactured using the second processing aid 19, when using the processing aid, the material for manufacturing the second processing aid 19 is polished with an abrasive such as cerium oxide. When it is manufactured using a metal material such as super steel, which is a material that is difficult to produce, the outer peripheral portion of the quartz plate 13, the circumferential portion of the circular portion, is formed by the processing aid 19 made of super steel. Because it is protected and polished, even if it is polished using a single-side polishing machine, for example, as a lapping plate, it can be made of super steel, etc., while following a metal plate such as a tin plate The second processing aid 19 is the parallelism of the tin plate, Since the polishing process is always performed while correcting the integration, it is possible to perform processing with high parallelism and surface accuracy to the utmost extent. The tool 19 was manufactured using a super steel.
(D) or 6 μm as shown in FIG.
When the inside and outside are polished using a single-side polishing machine or a double-side polishing machine, the parallelism and surface accuracy are 1
It has been found that machining can be performed within an error range of / 100 or less. By using this machining method, for example,
Parallelism (tilt angle) even when polishing a 2 inch (about 5.8 cm) substrate and processing a thickness of 5 μm
Can be processed within an error range of 5 μm × 1/100 → 0.05 μm, so that the error is not enough to affect the electrical characteristics of the quartz plate 13. further,
A metal material such as a super steel is used to protect the outer periphery of the quartz plate 13, so that a state of a processing method in which cracks or breakage does not occur in a peripheral portion of the quartz plate 13 is illustrated. still,
When the quartz plate 13 is removed by 62 μm by RIE processing, firstly, irregularities inside and outside 0.1 μm to 6 μm are generated.
Although it is best to remove the unevenness by using mechanical polishing means, the second cause is that the ionic particles generated by the collision with the quartz plate 13 are generated. As means for removing the work-affected layer generated due to the cause of 2, the amorphous portion has a thickness of at most 0.2%.
Since the thickness is from about 1 μm to about 1 μm, the amorphous portion may be removed by using only a chemical wet etching process using hydrofluoric acid or the like.

Although the description regarding the above-described polishing has been made using a single-side polishing machine, when polishing is performed using a double-side polishing machine, FIG.
As shown in FIGS. 45 and 46, the quartz plate 13 is polished using the upper lapping plate 18 (see FIG. 16B), and the lower surfaces of the processing aids 11 and 11 ″ are lowered. Polishing is performed from both sides in the vertical direction by using the lapping plate 17 of the above.
As a means for fixing to the processing aids 11 and 11 ", the second means for forming the processing aids 11 and 11" by simply placing them on the processing aids 11 and 11 "without using an adhesive is used. By using the processing aid 19 to protect the outer periphery of the crystal plate 13 and placing the crystal plate 13 on the upper surfaces of the processing aids 11 and 11 ″, the polishing can be performed while fixing the crystal plate 13.
In addition, since the vacuum suction cannot be used for the processing aids 11 and 11 ″ used when performing polishing using this double-side polishing machine, the processing aids 11 and 11 ″ are used. The formed hole 16 will not be needed.

Further, when the lapping plates 17 and 18 are polished using a double-sided lapping machine, the material of the lapping plates 17 and 18 is made of a metal such as iron. The plate 17 is made of a metal such as iron of the same material as the processing aids 11 and 11 ″, and the lapping plate 18 for polishing the quartz plate 13 is a wrapping plate with a suede 15 (pad) or the like. As shown in FIG. 45, when the polishing processing is performed using the metal 18, the processing aid 19 made of a metal such as super steel is not polished, for example, only the crystal plate 13 is 6 μm. Before and after, since the polishing processing is performed deeper than the processing aid 19, the crystal plate 13 in the middle of the polishing processing does not protrude from the processing auxiliary tool 11. The difference between the quartz plate 13 shown in FIG. 45 and FIG. 46 is that the lapping plate 18 for polishing the quartz plate 13 shown in FIG. 45 and FIG. Although the wrapping plate 18 is used, the processing aid 11 shown in FIG.
Although the material of the second processing aid 19 forming the second processing aid is a metal such as a super steel, the second processing forming the processing aid 11 ″ shown in FIG. The material of the auxiliary tool 19 is a processing aid 11 and 11 ″ due to the difference due to the use of hard glass made of quartz or the like.
The second processing aid 19 shown in FIG. 45 is different in the height direction of the second processing aid 19 forming
Is not polished at all, whereas the second processing aid 19 shown in FIG. 46 is polished to the same height as the quartz plate 13. However, cerium oxide is used as the polishing agent. The reason is that the material of the quartz plate 13 and the material of the second processing aid 19 are made of the same quartz.

Using the processing means shown in FIGS. 45 and 46, the thickness 2 which cannot be manufactured at present using a double-side polishing machine (also called a lapping machine).
7 μm (currently, the limit of the thickness that can be manufactured is 24
When the thin quartz plate 13 below is manufactured, the thickness of the thin quartz plate 13 is set to about 29 μm.
FIGS. 45 (b) and 46 (b) show first processing means.
As shown in FIG.
As shown in FIG. 46A and FIG.
Plate with a base thickness machine-polished to a thickness of 1.
3 was removed by 62 μm, and the thickness of the quartz plate 13 was reduced to 1
After having a thickness of 8 μm, RIE is used as a second processing means.
In the case where 62 μm is removed by a RIE process, a deteriorated layer generated by the process, for example, about 0.2 μm to 6 μm
Of about 0.2 μm to 6 μm
Of the work-affected layer is removed by mechanical polishing using a processing means such as a lapping machine, a single-side polishing machine, or other mechanical polishing, or a chemical wet Et.
The electrical characteristics of the quartz plate 13 are improved by removing using the means of ching.

Reactive Ion Etchin
g (RIE) processing means that, in a vacuum or almost a vacuum, ion particles are accelerated to a speed of several tens km to several hundred km, and the ion particles are made of a piezoelectric material such as a quartz plate 13;
Or, using a kinetic energy generated by colliding with other electronic materials, the surface of the crystal plate 13 or the like is a processing means for scraping the surface in very small amounts. At the moment when the ion particles collide, the temperature rises on the surface of the quartz plate 13, and the quartz plate 13 melts very little by little on the surface of the quartz plate 13 due to the high temperature. And crystal plate 1
On the surface of No. 3, a temperature rise above the Curie temperature (approximately 495 ° C.) occurs, and on the surface of the quartz plate 13, a phenomenon of gasification, vaporization, and blowing off occurs. From the above, in the case of a material having crystallinity or a crystal direction such as the quartz plate 13, an extremely thin amorphous, that is, a polycrystal of quartz or silicon becomes amorphous on the surface where the ion particles collide. Or a compound with the gas used,
For example, a film of a compound with fluorine, an argon gas, or a chlorine-based gas, or another oxide (being not to be a crystal), or an oxide film (for example,
When 10 μm is deleted by RIE processing, 1/10 to 1
/ 100 (it is considered to be a film of about 0.1 μm to about 1.0 μm).
Since the electrical characteristics such as No. 3 are extremely deteriorated, RIE
After processing and processing, as a subsequent processing means, mechanical polishing or chemical Wet Etc
Unless the ching process is performed, it is impossible to process a piezoelectric material and an electronic material having good electrical characteristics.
However, as shown in FIG. 45 (e) and FIG. 46 (e), if the RIE process is performed on both sides by 1.0 μm at a time, it is within the allowable range. As a finishing step, it is better to use wet etching processing means without using RIE processing. The advantage of the RIE processing is that it is used as a means for roughing 62 μm and a processing means for fine adjustment for cutting the inside and outside of 0.1 μm to 1 μm as shown in FIGS. 45 (b) and 46 (b). Or the processing aids 11 and 11 ″ shown in FIGS. 45 (d) and 46 (d).
And RIE processing means are combined to provide the advantages and disadvantages of mechanical polishing processing means with good electrical characteristics.
By alternately using the processing means of processing and the processing means of chemical wet etching, at the stage shown in FIGS. 45 (e) and 46 (e), which could not be performed by mechanical polishing. The thickness of the quartz plate 13 obtained by finally removing the hatched portion by using chemical wet etching is 1 inch × 1 inc inside and outside 10 μm.
h or a 2 inch × 2 inch round or square base plate of the quartz plate 13 can be mass-produced in large quantities at low cost. This is achieved by polishing using both the RIE processing and the processing aids 11 and 11 ″. This is an advantage of performing the processing.
As shown in FIG. 45 (b) and FIG. 46 (b), the above processing is enabled by the RIE processing as the first processing means, when the thickness of the quartz plate 13 is 80 μm. 62μ without any distortion on the substrate
45 (d) and FIG. 46 (d), as a second processing means, it is possible to manufacture a quartz plate 13 having a thickness of 18 μm, though it is rough processing by removing m. Using the processing aids 11 and 11 ″ shown in FIG.
Degraded layer generated by IE processing, which is a defect of RIE processing (for example, about 0.2 μm
m to 6 μm) is removed by polishing using mechanical polishing means (however, almost no distortion occurs in RIE processing), thereby improving electrical characteristics. In addition, it is possible to manufacture the crystal plate 13 having good electric characteristics. Furthermore, the electrical characteristics are good,
If the base of the crystal plate 13 is formed, FIGS.
And the concave lens shape shown in FIG.
-Convcx type shape, Concavo-Connve
The present invention can also be used for highly precise production of the quartz plate 13 having an x-shape, a Bi-Convex-shape, or another shape.

As shown in FIGS. 44, 45 and 46,
A quartz plate having a flat plate or concave lens shape formed by holding a flat plate or concave lens shape surface of a quartz plate 13 having a flat plate or concave lens shape by using a processing aid 11 When the back surface of the substrate 13 and one surface of the processing aid 11 are simultaneously polished from the upper and lower surfaces using a double-side polishing machine, one surface of the quartz plate 13 having a flat plate shape or a concave lens shape is formed. Since there is no polishing at all, and only the back surface having a flat plate shape or a concave lens shape can be polished, there are the following advantages. By using a double-side polishing machine, it is possible to polish the crystal plate 13 which is extremely thin and has a flat plate shape or a concave lens shape. Even if the polishing process is performed using a double-side polishing machine, the flat surface or the concave lens shape is formed on the quartz plate 13 by using the processing aid 11 without any polishing process. Since only the back surface on which the shape or the concave lens shape is formed can be polished, the processing dimensional accuracy of the flat plate shape or the concave lens shape portion does not change. By using the processing aid 11, single-side polishing can be performed using a double-side polishing machine, so that roughing, lapping, polishing, polishing, polishing, Or, the precision of the processing dimension of the concave lens shape portion does not change. By using the processing aid 11, it is possible to achieve the parallel accuracy and the planar accuracy, which are the advantages of the double-side polishing machine, while performing the single-side polishing. By using the processing aid 11, both the advantages of the RIE or chemical etching, the advantages of the single-side polishing machine, and the advantages of the double-side polishing machine can be utilized. By performing the one-side polishing using the processing aid 11, the disadvantage of the one-side polishing machine is eliminated.

FIG. 47 shows a quartz plate 13 having a concave lens shape on both sides manufactured by RIE, plasma or other chemical etching from both sides of the quartz plate 13. 13, using the carrier 37 shown in FIG. 20 directly without using the processing aid 11, and by using the carrier 37 shown in FIG. The figure shows a processing state in which a damaged layer due to etching is removed by machining. FIG. 47 (c) shows an example of a completed dimensional diagram. In addition, a quartz plate 13 having both surfaces formed into a concave lens shape, a suede 15 was stuck thereon,
When the quartz plate 13 having a concave lens shape on both sides is polished using a lapping plate 17 and a lapping plate 18 to apply a polishing pressure from above and below, using a double-side polishing machine, FIG. It has been found that the shape of the quartz plate 13 having the shape shown in FIG. 47) can be polished to the shape of the quartz plate 13 having the shape shown in FIG.

FIG. 48 shows that when a quartz plate 13 is actually manufactured, a mask is formed by masking the surface of the quartz plate 13 of a 2.0-inch wafer, and chemical wet is performed. Using etching, hundreds to thousands of plate-shaped or concave lens-shaped quartz plates 13 on one side or concave lens shapes on both sides are formed.
Is cut, and the quartz plate 13 is used in a state of a square shape, or the quartz plate 13 is cut into a round shape and used. 48 (a) and 48 (b) show a round shape, but in practice there may be cases where a square shape is used.

Although the processing means described with reference to FIGS. 44, 45, and 46 describes the processing method one by one, actually, as shown in FIG. On the surface of the 0-inch wafer, a resist is applied and masked, a mask is applied to the quartz plate 13, and then etching such as chemical wet etching is performed, and a large amount of etching is performed at once.
A processing aid 11 or a processing aid capable of holding a quartz plate 13 having a concave lens shape on one side or a concave lens shape on both sides, or a flat plate shape, or another shape formed by performing a large amount of etching. Tool 11 ", or FIG.
9 using the third processing aid 61,
Alternatively, the carrier 37 shown in FIG. 20 is processed by using the processing aid or the processing aid 11 or the processing aid 11 ″ directly without using the processing aid 11 ″ in another shape. Using a double-sided polishing machine to perform polishing from both sides, or use a single-sided polishing machine to keep polishing, or use After performing another etching process such as a chemical wet etching process for the purpose of adjustment, the crystal plate 13 is cut and manufactured one by one to obtain a high-precision quartz crystal at a low cost. The plate 13 can be manufactured in a large amount in a short time.

FIGS. 48 (a), (b), (c) and (d)
The quartz plates 13 shown in FIG.
When polishing a two-inch base (wafer) forming one or several thousand concave lens shapes, the third base as shown in FIGS. 49 (a) and (d) is used.
The third processing aid 61 is manufactured by using the processing aid 61 of plastic, super steel, iron, or other metal, or another material, and the space portion of the third processing aid 61 is manufactured. After the quartz plate 13 is inserted into the space portion 62 as shown in FIGS. 49C and 49E, the carrier 37 shown in FIG. The crystal plate 13 may be used as a processing step of performing a double-side polishing process by causing the crystal plate 13 to perform a planetary motion. Although FIG. 49 shows the processing means using both grinding and polishing of the quartz plate 13 one by one,
The shape of the concave lens is from several tens to several hundreds, or
Both the grinding process and the polishing process for forming the 000 crystal plates 13 are exactly the same as the processing means using both the grinding process and the polishing process for the crystal plate 13 in the case shown in FIG.
The conditions for polishing the quartz plate 13 shown in FIG.
The back surface forming the concave lens shape is polished using a lapping plate 18 on which a suede 15 is stuck, and the polishing process on the front surface forming the concave lens shape is an iron or tin plate. When the polishing process is performed using a lapping plate 17 made of a metal plate such as a metal plate and using a very small polishing agent such as diamond, GC, or cerium oxide as the polishing agent, the quartz plate 13 becomes the third
By inserting (inserting) into the space portion 62 of the processing auxiliary tool 61, the crystal plate 13 and the third processing auxiliary tool 61 are united integrally, and the combined crystal plate 13 and the third processing auxiliary are integrated. The tool 61 is connected to the third processing aid 61 which is combined with the quartz plate 13 by using the carrier 37 shown in FIG.
The third processing aid 61 made of metal such as super steel, which is located on the outer periphery of the crystal plate 13 by performing planetary motion, constantly performs planetary motion with the crystal plate 13,
Since the parallelism and surface accuracy of the lower wrapping plate 17 made of metal such as iron or tin plate are constantly corrected and increased, the accuracy of the finished quartz plate 13 is extremely high. The effect that the polishing process of the crystal plate 13 of
It is created by using a third processing aid 61 made of super steel or the like. When cerium oxide is used as an abrasive, the material of the lower wrapping plate 17 is made of a metal such as iron or tin plate. The upper lapping plate 18 is made of cerium oxide which is compatible with the quartz plate 13 by using the lapping plate 18 on which the suede 15 is stuck. The upper and lower lapping plates 17 and 18 are used for polishing. Then, only the surface of the upper wrapping plate 18 on which the suede 15 is stuck is polished to a thickness of 9/10 or more. Therefore, as shown in FIG. Quartz plate 1 in shape
Since only the concave lens-shaped back surface (flat surface) of No. 3 is polished, only the vibrating portion of the quartz plate 13 is polished extremely thinly stepwise. In addition, the third
Even if the height of the processing aid 61 is the same as the height of the quartz plate 13 having a concave lens shape, if the polishing is performed using the lapping plate 18 on which the suede 15 is stuck, the third
Since the processing aid 61 is made of super steel, the quartz plate 13 inserted into the third processing aid 61 has a depth of up to about 15 μm even if it is not polished at all. For example, if the thickness of the concave lens-shaped quartz plate 13 is initially 80 μm, the third processing auxiliary tool 61 is polished to a depth of about 80 μm−15 μm = 65 μm. Even if the quartz plate 13 has the same height, only the quartz plate 13 can be polished to a thickness of up to about 65 μm.

The quartz plate 13 shown in FIG. 49 (c) has a square shape, and the processing aid 61 into which the square quartz plate 13 is inserted is also a rectangular space. When polishing is performed using the processing aid 61 forming the processing aid 61, the processing aid 61 forming the round-shaped space portion 62 shown in FIG. In some cases, it is possible to perform the polishing more effectively by performing the planetary motion using the carrier 37 directly using the processing aid 61 having a square shape.

FIG. 50 shows a mask plate 63 made of, for example, a quartz plate 13 having a hole of 0.5 mm formed immediately above the quartz plate 13, or quartz or tungsten seaside or other material. Mask plate 6 made of
3, using an ultrasonic processing machine or the like, a mask plate 63 having a hole of 0.5 mm is placed right above the quartz plate 13, and RIE (Rcacti) is performed from above the quartz plate 13.
vc Ion Etching) processing, depth 1
A state in which a concave lens shape of 5 μm is formed on the quartz plate 13 is shown. Why use mask plate 63 instead of masking instead of masking (metal coating)
When forming a concave lens shape of 15 μm to 25 μm or more on the quartz plate 13, when forming a concave lens shape of 15 μm to 25 μm or more on the quartz plate 13, the thickness of the metal film is determined by masking using an exposure unit. However, at the stage of forming a concave lens shape inside and outside 15 μm on the quartz plate 13 because it is at most about 1 μm, the thickness of the metal coating of the masking is completely eliminated and becomes zero, but it is useless. In addition to masking the quartz plate 13 using the mask plate 63 in which holes, for example, 0.5 mm holes are formed in the mask plate 63 and performing RIE processing, 13, it is impossible to form a concave lens shape having a depth of 15 μm or more. Also, the mask plate 63
As a material for the crystal, quartz or the like made of quartz, which is the same material as quartz, is a suitable material for the mask plate 63 when the quartz plate 13 is subjected to RIE processing. This is because, when the mask plate 63 is manufactured using quartz or a material other than quartz, the RIE is performed on the surface of the quartz plate 13.
Another substance which is decomposed by the fluorine gas used in the processing and turned into a plasma state, adheres to the surface of the quartz plate 13, and a phenomenon occurs in which irregularities are formed on the surface of the quartz plate 13. For this reason, it is impossible to process the quartz plate 13 with high accuracy. Therefore, a state is shown in which quartz or quartz is used as the mask plate 63 and the quartz plate 13 is used as the mask plate 63. I have. As a bad example, for example, if a plate made of Pyrex is used as the mask plate 63, a substance such as aluminum contained in Pyrex is decomposed by fluorine gas to form alumina or the like, and quartz is formed. Pyrex or the like cannot be used because a phenomenon occurs such that it adheres and combines on the surface of the plate 13. It should be noted that, other than the above means, it is also possible to easily mask by a method of attaching a resist on the surface of the quartz plate 13 using a dry film (a product of Dubon MRC Dry Film Co., Ltd.). As other means, directly on the surface of the quartz plate 13,
Masking is also possible by a method of applying a resist.

FIGS. 51 and 52 show that the quartz plate 13 is formed into a concave lens shape on both sides or a convex lens shape on both sides by using RIE processing, plasma etching, or other chemical etching means. And the crystal plate 13
After processing into a concave lens shape, as a subsequent processing means, a mechanical polishing process, using a double-side polishing machine, or a single-side polishing machine, or other polishing processing means, into a concave lens shape, chemical The deteriorated layer on the processed surface formed using a wet etching means is removed by a mechanical polishing means so that the parallel polishing and the surface accuracy of both surfaces are maintained, or the RIE is performed again. Etching using chemical wet etching means, such as processing and plasma etching, is a disadvantage of etching.
Very small, several μm, irregularities occur.
Furthermore, by removing the back surface of the quartz plate 13 forming the concave lens shape again by mechanically polishing and mechanically removing the back surface by using both polishing and mechanical polishing, This shows a state in which the crystal plate 13 can be processed extremely and thinly to the limit. In the drawings, hatched portions indicate portions that have been shaved off by using both etching and a double-side polishing machine or a single-side polishing machine. To summarize the above, the crystal plate 13
Is processed into a concave lens shape or a convex lens shape using RIE processing or other chemical wet etching means, or mechanical grinding means, and then mechanically polished to perform RIE processing. Alternatively, minute irregularities formed by chemical etching means can be removed to improve parallel accuracy and surface accuracy. RIE processing or chemical wet etching processing and mechanical,
The polishing plate and the etching process are used together to make the quartz plate 13
Even if the crystal plate 13 is made as thin as possible, the surface accuracy is not reduced.
However, holes are not formed or damaged due to impurities due to excessive etching. 51 and FIG.
The processing means for processing the quartz plate 13 shown in FIG. 2 having a concave lens shape on one or both sides may be the following processing means. After processing the quartz plate 13 into a concave lens shape from one surface or both surfaces using wet etching, chemical wet etching means, or mechanical grinding or polishing processing means, From both sides,
In the figure, the hatched portions are reactive.
After performing an Ion Etching (RIE) process and reducing a similar shape or a relatively reduced size from both sides, a mechanical polishing process is used to remove a deteriorated layer generated by the RIE process, or use a chemical polishing process. Wet Etc
By performing the hing process and removing the process-damaged layer generated by the RIE process, the electrical characteristics are good, and the thickness of the quartz plate 13 can be processed to a thickness of 1 μm or less.

Further, after processing into a shape as shown in FIG. 52 (a) using the grinding means shown in FIG. 1, for example, as shown in FIG. 52 (b), (c), As shown in FIGS. 52 (d) and (e), by using RIE processing means from both surfaces, the hatched portions in the figure are removed by RIE processing to obtain FIG. (A)
The shape shown in Fig. 7 is reduced to a similar shape exactly the same as the shape shown in Figs.
-In the Convex type shape, the thickness of the holding portion 51 having the size shown in FIG. 52 (a) is 74.5 μm.
FIG. 52 shows a shape in which the thickness of the groove 52 is 24.5 μm and the thickness of the thickest part of the vibrating part is 26.5 μm.
As shown in (f), the thickness of the holding portion 51 is 5
0.5 μm, the thickness of the groove 52 is 0.5 μm, and the thickness of the thickest part of the vibrating part is 1.5 μm.
The state which can be reduced to a similar shape is shown.
In addition, as a subsequent processing means, it is necessary to remove the deteriorated layer generated by the RIE processing by using a mechanical polishing process or by using a chemical wet etching.

FIGS. 53 and 54 show the first embodiment.
As a processing means, a metal film is formed by masking the quartz plate 13 shown in FIG. 53 (a) or 54 (a), and the central portion of the quartz plate 13 has a diameter of 0.5 mm.
After forming only the center portion in the concave lens shape by using RIE processing or other chemical wet etching means, mechanical polishing shown in FIG. 1A is used as second processing means. If the processing means is the second processing means for finishing, the margin for performing the grinding by the grinding means, which is the second processing means, can be reduced, so that in one short time, one surface has a convex lens shape, or Both sides are convex lens-shaped, and as shown in the figure, forming a holding portion 51 and a smooth line 53, both sides are convex lens-shaped, or one surface is concave and the other is convex. This shows a state in which a concave-convex lens type shape can be manufactured. Further, after a grinding process and a polishing process are performed together to form a Bi-Convex shape shown in FIG.
FIG. 54 (d) shows the Bi-Convcx type shape shown in FIG. 54 (d), when it is reduced to a similar shape by RIE processing from both sides and etching from both sides by 9.25 μm each. Alternatively, an extremely thin and highly accurate Bi-Convex-type quartz resonator having the shape shown in FIG. 54 (d ′) can be easily manufactured. Further, after the Bi-Convcx type shape is reduced to a similar shape by RIE processing, the Bi-Convex type shape is subjected to Bi-Co using a mechanical polishing processing means such as a double-side polishing machine.
From both sides of the nvex type shape, polishing is performed, or by a processing means such as chemical wet etching.
When the affected layer is removed by the RIE process, a crystal oscillator having good electric characteristics can be obtained. The explanation of the processing means shown in FIG. 53 and FIG.
Although the explanation regarding 3 has been made, the actual processing is performed when the diameter is 1 "inch × 1" inch or 2 "inch ×
Using a 2 ″ inch square or round crystal plate 13, a large number of products are manufactured at a time.

FIG. 55 (a) and FIG. 56 (a) show that the thickness is 80 μm using a double-side polishing machine.
2 shows a quartz plate 13 having a square shape with a diameter of 1 inch and both surfaces of which are polished to a mirror surface. FIG. 55 (b)
56 (b) shows the quartz plate 1 having a thickness of 80 μm shown in FIGS. 55 (a) and 56 (a).
3 shows a state where the thickness of the crystal plate 13 is reduced by 68 μm from one side surface of the crystal plate 13 using the processing means of the RIE processing, and the remaining thickness of the crystal plate 13 remains 12 μm. FIG. 55 (c) shows a crystal plate obtained by processing the thickness of the crystal plate 13 having a thickness of 80 μm to a thickness of 12 μm by using RIE processing means. 13
Hydrofluoric acid, only from one side after RIE processing
Chemical We using NH ₄ HF ₂ or HF
By performing t Etching, a process-affected layer (amorphous portion) generated by the RIE process is removed by 1.5 μm, and a quartz plate 13 having a thickness of 10.5 μm and a diameter of 1 inch is processed. It shows the state where it is. FIG. 56 (c) shows that the thickness of the quartz plate 13 which was initially 80 μm was reduced to 12 μm by using the processing means of RIE processing.
The quartz plate 13 processed to a thickness of m
_{4 When} placed in a solution such as HF ₂ or HF, 1.5 μm from one side subjected to RIE processing, 1.5 μm from one side without RIE processing, and a total of 3 μm from both sides were chemically treated. By performing the basic Wet Etching, the affected layer generated by the RIE processing is removed by 1.5 μm. As a result,
This shows a state where a quartz plate 13 having a thickness of 9 μm and a diameter of 1 inch is being processed.

As shown in FIGS. 55 and 56, the thickness of the quartz plate 13 having a thickness of 80 μm was
When the thickness of the quartz plate 13 is reduced to 68 μm using the processing means of processing and the thickness of the quartz plate 13 is set to 12 μm,
Fluorine-based or chlorine-based, high heat generated when ion particles strike the quartz plate 13, the thickness from the surface of the quartz plate 13 to a depth of about 0.2 μm to about 1.0 μm. In addition, the surface layer on the surface of the quartz plate 13 becomes a damaged layer and a work-affected layer (amorphous layer) due to the influence of high heat at a temperature higher than the Curie temperature, and the electrical characteristics of the quartz plate 13 are greatly improved. For the purpose of improving the electrical characteristics of the quartz plate 13, the quartz plate 13 is initially formed by mechanical polishing.
As shown in FIG. 55, the quartz plate 13 having a thickness of 80 μm is RIE-processed to be cut down by 68 μm to form a quartz plate 13 having a thickness of 12 μm, from one side of the RIE-processed plate, or As shown in FIG.
The entire surface of the processed one side and both surfaces of the one side subjected to the mechanical polishing are put in a solution such as hydrofluoric acid and subjected to chemical wet etching or chemical etch. Chemical Wet Etchi by spraying the solution into a mist
ng is performed to remove the 1.5-μm thickness of the work-affected layer generated by the RIE process from one or both sides, thereby restoring the original electrical characteristics of the crystal plate 13. It turned out that we could do it. RIE
As means for removing the deteriorated layer generated during processing,
As shown in FIGS. 45 and 46, the mechanically damaged layer may be removed by using a mechanical polishing processing means, or may be cut into small pieces, for example, when the thickness is 10 μm, the diameter may be reduced. May be cut into a 1.2 mm or 2.0 mm round or square shape, and polishing using ultrasonic vibration or barrel polishing may be used.
, Hydrofluoric acid, NH ₄ HF ₂ , or H
The process-induced deterioration layer generated by the RIE process may be removed by using a processing means of chemical wet etching in which the quartz plate 13 is entirely placed in a solution such as F.

FIGS. 57, 58, 59 and 60 first show that FIG. 57 first shows
A circular shape with a diameter of 2.89 mm and a thickness of 29.5μ
m shows a measured diagram of the frequency (56.595 MHz) characteristic of a flat-plate-shaped quartz plate 13 that has been polished (polished) to a mirror surface using a double-side polishing machine for both surfaces. Secondly, FIG. 58 shows a case where 12.13 μm is removed from one side of the quartz plate 13 shown in FIG. The thickness became 17.36 μm,
FIG. 3 shows an actual measurement diagram in which characteristics of a frequency (96.1599 MHz) of the quartz plate 13 are measured. Thirdly, what is shown in FIG. 59 is that the RIE processing is performed using
For the purpose of removing irregularities and a work-affected layer (amorphous portion) generated on the surface of the quartz plate 13, only one side of the quartz plate 13 shown in FIG. Polishing is performed mechanically using cerium oxide as a polishing agent, and a thickness of 0.12 is used to remove a deteriorated layer generated by processing means of RIE processing.
μm, and the thickness of the quartz plate 13 becomes 17.24 μm
After that, the frequency of the quartz plate 13 (96.8847M
(Hz) is shown. Fourth,
FIG. 60 is a view again showing the crystal plate 13 with a thickness of 17.24 μm shown in FIG. 59 for the purpose of further removing the work-affected layer of the crystal plate 13. 59
The quartz plate 13 shown in (1) is again polished to 4.96 using cerium oxide as the polishing agent as in the third case.
By removing the thickness of μm, the thickness of the quartz plate 13 becomes 12.2.
After reaching 6 μm, the frequency of the quartz plate 13 (136.1
149 MHz).

To explain the above, first, first,
In the frequency measurement diagram shown in FIG. 57, the occurrence of sub-vibration is small, and the plate-shaped quartz plate 13 oscillates a very wonderful wave-shaped frequency. Secondly, FIG. 58 shows that the crystal plate 13 having a thickness of 29.5 μm shown in FIG.
Looking at the waveform of the frequency of the crystal plate 13 when 12.13 μm is removed, the sub-vibration is very close to the main vibration, so it is completely used as a crystal vibrator. This shows an oscillating state as a wave-shaped crystal resonator that cannot perform the above operation. Third, what is shown in FIG.
Using the processing means of the RIE processing shown in FIG.
2. From the RIE-processed surface of the crystal plate 13 after removing 13 μm, cerium oxide was used as an abrasive, and 0.12 μm was mechanically polished using mechanical polishing means. The undulation shown in FIG. 59 is different from the undulation shown in FIG. 56 in that the sub-vibration is more distant from the main vibration. You can see that Fourth, what is shown in FIG. 60 is that the quartz plate 13 shown in FIG.
Using cerium oxide as an abrasive, 4.96 μm in thickness from the surface subjected to RIE processing using mechanical polishing processing means. FIG. 60 is an actual measurement diagram in which the frequency of the quartz plate 13 with the layer removed is measured. FIG. 59 shows a comparison between the measurement diagram of the frequency shown in FIG. 60 and the measurement diagram of the frequency shown in FIG. It can be seen that the sub-vibration has disappeared from the frequency measurement diagram shown in FIG. From the above results, using the processing means of the RIE processing, the crystal plate 13 which originally oscillated a good wave-shaped frequency was used.
Processing, a sub-vibration was generated, and it was found that it could not be used as a quartz oscillator and oscillated a wave shape of frequency. However, the RIE-processed quartz plate 1
It has been found that the electrical characteristics of the quartz plate 13 can be improved by mechanically polishing the machined surface 3 again.

From the above, it can be judged that the polishing was performed using a double-side polishing machine, and FIG.
The wave shape of the quartz plate 13 shown in FIG.
In order to increase the frequency, the thickness of the quartz plate 13 is reduced by using RIE processing means for the purpose of reducing the thickness of the quartz plate 13.
When the thickness is reduced, the processing-affected layer (the surface of the quartz plate 13 becomes an amorphous film extremely partially, and is made of quartz, polycrystal of silicon, oxide of silicon, or other oxidation by RIE processing) , Or other compounds), and oscillates at a wave-shaped frequency that cannot be used as a vibrator at all. But RIE
By removing the affected layer of 0.2 μm to 1.0 μm generated by the processing again by using a mechanical polishing processing means, a wonderful and good frequency waveform is oscillated again. It turned out to be a quartz crystal oscillator. This makes it possible to compensate for the drawbacks of the processing means of the RIE processing by mechanical polishing processing means and chemical wet etching.
Although the use of the ching processing means can make up for the drawbacks of the processing means of the RIE processing, the chemical wet et
It is better to remove mechanically damaged layers by using a mechanical polishing means than a processing means of the ching processing, and the original electrical characteristics of the quartz are better. From the above, R
Polishing (mechanical polishing) using IE processing together
→ RIE processing → polishing or chemical Wet Et
Ching processing or RIE processing (used for fine adjustment)
By using the processing means, it was possible to manufacture a crystal oscillator that was as thin as possible, as much as possible, with a good wave shape, as much as possible, as high as possible, at a high frequency, at a low price. Since this processing technique is a simple processing technique, it is also the last technology on earth to cause an industrial revolution. When fluorine-based ion particles such as CF ₄ or C ₂ F ₆ or chlorine-based ion particles are made to strike the crystal plate 13 at an extremely high speed on the surface of the crystal plate 13, for example, fluorine Ion particles or carbon particle ions are deposited on a quartz (Si)
O ₂ ) undergoes a chemical reaction with O ₂ (oxygen) to produce a crystal (S
Fluorine ion particles from iO ₂ ) to oxygen (O ₂ ) have a higher ionization tendency than silicon (Si), are further accelerated at a very high speed, are given kinetic energy, and have a high potential. O ₂ ) is deprived, fluorine ion particles and oxygen (O or O ₂ ) undergo a chemical reaction, and a fluorine compound or a fluorine oxide is formed on the surface of the quartz plate 13, More oxygen (O or O ₂ )
Projecting, 0.2 mm on the surface of the quartz plate 13
Very thin, used gas and Si of about μm to several μm
A compound of O ₂ , for example, a compound of fluorine and SiO ₂ , or a single crystal of silicon, or a polycrystal of silicon (Si);
Alternatively, the quartz plate 13 is melted by the influence of high heat generated by kinetic energy when the ion particles collide with the quartz plate 13 due to the formation of a silicon oxide film and the quartz (S)
iO ₂ ). The thickness of a silicon (Si) single crystal or silicon polycrystal film, quartz (SiO ₂ ), or other oxide film (processed layer) formed on the surface of the quartz plate 13 is as follows. In the case where the ion particles are at a speed of several kilometers per second, several tens of kilometers, several hundreds of kilometers, and several thousand km, the processing-degraded layer (film) formed on the surface of the quartz plate 13 can be formed. Although the thickness is different, the thickness of the film is about 0.2 μm to about 5 μm.

FIG. 61, FIG. 62, FIG. 63 and FIG. 64 show that a concave Wet lens has a chemical Wet Etc.
Hing processing, or mechanical processing, or other processing means, processed into a concave lens shape, the thickness is 80μm,
A prismatic quartz plate 13 having a concave lens shape having a depth of 60 μm and a diameter of 1 inch or more is formed with the same thickness and a thickness of 80 μm.
After bonding using an adhesive such as rosin on a quartz plate 13 which is not processed into a concave lens shape having a diameter of 1 inch or more and having a diameter of m, FIG. 16, FIG. 20 and FIG. Using a double-sided polishing machine (lapping machine), polishing is performed using upper and lower lapping plates 17 and 18, or as shown in FIGS. After bonding the surfaces of the quartz plate 13 processed into the concave lens shape with the concave lens shape to each other using an adhesive such as rosin, the back surface of the quartz plate 13 with the concave lens shape is attached to the upper and lower lapping plates. When polishing using 17 and 18, since the materials to be bonded are the same crystal, distortion does not occur during processing due to the same coefficient of thermal expansion. Further, as a material to be bonded to the quartz plate 13 having the concave lens shape, quartz glass having a thermal expansion coefficient close to that of quartz may be used instead of quartz. 62 and 64, an adhesive layer 59 such as rosin is injected into the concave lens shape forming the concave lens shape, and
2 shows a state in which the concave lens-shaped portion is reinforced.

FIGS. 65, 66, 67, 68, and 69
And FIG. 70 shows the same shape as the quartz plate 13 shown in FIG. 61, a thickness of 80 μm, a concave lens shape having a depth of 60 μm, and a square shape having a diameter of 2.0 mm. The two types of quartz plates 13 having a concave lens shape in the case of a square shape having a diameter of 1 inch are attached to the first processing aid 1.
1 and 11 ′, and the processing surface formed with the concave lens shape on the processing aid 11 formed using the second processing aid 19, and the processing surface formed with the concave lens shape on the first processing aid 11 and 11 ′, The first processing aids 11 and 1 are placed as they are (just put on) or using an adhesive such as rosin, paraffin, or agarose such as agar.
A quartz plate 13 having a concave lens shape is formed directly above 1 ′.
After sticking using an adhesive such as rosin, using a double-side polishing machine shown in FIG. 16, using upper and lower lapping plates 17 and 18 to form a concave lens shape on one side. The back surface of the crystal plate 13 is polished, and the other surface is polished on the back surfaces of the first processing aids 11 and 11 ′ to form a concave lens shape. Can be polished, so that a very thin and small-diameter substrate to a large-diameter substrate can be polished without changing the dimensions of the concave lens shape formed on the quartz plate 13.

FIG. 65 and FIG. 66 show the processing of each piece, but FIG.
7, FIG. 68, FIG. 69, and FIG. 70 describe the processing in the case where the shape of the square base having a diameter of 1 inch is used. When a 1-inch square substrate is used, the thickness is 61 μm, the diameter is 2.0 mm, and the thickness of the vibrating portion is about 10 μm to 0.5 μm, as shown in FIG. Of the crystal oscillator is 1
Approximately 56 quartz resonators can be made from one 1-inch substrate, so that the larger the diameter of the substrate, the lower the manufacturing cost per unit.

67, 68, 69 and 70 are different from each other in that the height of the second processing aid 19 and the material of the second processing aid 19 are made of super steel or It shows the difference between a material such as hard glass and a material such as hard glass.
FIGS. 69 and 70 show the back surface of the quartz plate 13 having the concave lens shape, the concave lens shape being formed,
While the state in which the second processing aid 19 is polished together is shown, FIGS. 67 and 68 show that the height of the quartz plate 13 having the concave lens shape is larger than that of the crystal plate 13. By lowering the second processing aid 19, the second processing aid 19 is not polished, and the back surface of the quartz plate 13 having the concave lens shape and the back surface of the first processing aid 11 are not polished. Shows a state where polishing is performed. The second processing aid 19 shown in FIG.
Is made of hard glass made of quartz or the like of the same material as quartz, whereas the second processing aid 19 shown in FIG. 70 is made of metal such as super steel. Differences due to what is done are shown. The advantage of using a super steel is that even if the diameter of the quartz plate 13 becomes large, there is no peripheral sagging due to polishing. FIG. 67, FIG.
8, as shown in FIG. 69 and FIG.
After removing 18 μm by IE processing, the remaining 1 μm is
As shown in (d), a mechanical polishing process may be performed. As shown in (c), it is a matter of course that the entire 19 μm may be polished only by mechanical polishing.

FIGS. 71, 72, 73, 74, 7
5, FIG. 76, FIG. 77 and FIG. 78 show a quartz plate 1 having a thickness of 80 μm, a diameter of 2.0 mm, or a square shape of 1 inch or more, and a concave lens shape having a depth of 60 μm.
3 using upper and lower lapping plates 17 using a double-side polishing machine shown in FIGS. 16, 20 and 21.
And 18 using the carrier 37 directly
This shows a state in which a rough polishing process is being performed and a final polishing process is being performed. FIGS. 71 and 72 show a quartz plate 13 having a thickness of 80 μm, a square shape having a diameter of 2.0 mm, a concave lens shape having a depth of 60 μm, and upper and lower wrapping plates 17 and 18. Then, when the final polishing is performed from the rough grinding, the area to be processed by the upper lapping plate 18 is 4 mm ² (2 ^mn × 2 m).
→ 4 mm ² ), whereas the area processed by the lower lapping plate 17 is 3.75 mm ² (4 mm ^2).
−0.25 mm ² = 3.75 mm ² ), so that the upper and lower lapping plates 17 and 18 allow the polishing margin to be polished so that the concave lens shape formed on the quartz plate 13 is The polishing pressure is slightly different between the case where it is peeled off and the case where the concave lens shape is directed downward.

The difference between FIG. 71 and FIG. 72 is that FIG. 72 shows that the inside of the concave lens shape of the quartz plate 13 having the concave lens shape is polished to obtain cerium oxide. The abrasive 65 such as
However, the inside of the concave lens shape is confined by the polishing pressure, and the inside of the concave lens shape naturally reinforces. The state where the grinding / polishing process is performed after the reinforcement is described indicates a different state.

FIGS. 73, 74, 75 and 76 show FIGS. 16, 20 and 21, respectively.
When performing grinding and polishing using the upper and lower lapping plates 17 and 18 using a double-side polishing machine, the same weight is applied to the upper and lower wrapping plates 17 and 18 and the upper and lower wrapping plates 17 and 18 are applied. In order to make the margin almost the same, the margin of the crystal plate 13 with the concave lens shape
This shows a state where the surface on which the concave lens shape is formed is equally distributed to the upper wrapping plate 18 and the lower wrapping plate 17. By alternately arranging the concave lens-shaped surface and the concave lens-shaped front surface of the quartz plate 13 having the concave lens shape on the wrapping plates 17 and 18, the upper and lower wrapping plates 17 and 18 are arranged. This shows a state in which the clearance between the front surface forming the concave lens shape and the rear surface forming the concave lens shape is the same because the added weight is the same. Note that FIG. 74 shows that the abrasive 65 is naturally confined inside the concave lens shape formed on the crystal plate 13 by the polishing pressure as described with reference to FIG. FIG. 76 shows that the adhesive layer 59 (the portion painted black) is formed inside the concave lens shape to reinforce the concave lens shape. The state is shown. As a processing means, it is better to confine the abrasive 65 than to form the adhesive layer 59.

As shown in FIGS. 73 and 74, first, after forming a concave lens shape on the quartz plate 13, the double-side polishing machine is used as a subsequent processing means. Wrapping plates 17 and 18
If the surface having the concave lens shape and the rear surface having the concave lens shape are alternately arranged and polished so that the same weight is applied, the condition for processing only the quartz plate 13 having the concave lens shape is different. By applying the same weight to the upper and lower lapping plates 17 and 18, the thickness of the vibrating portion of the quartz plate 13 processed by the upper and lower wrapping plates 17 and 18 becomes uniform, and the thickness is extremely thin and high in accuracy. A large number of transducers can be manufactured at low cost. However, as shown in FIGS. 77 and 78, no problem occurs even if the quartz plates 13 having the concave lens shapes are arranged in the same direction and subjected to grinding and polishing.

FIGS. 79 and 80 show a quartz plate 13 having concave lens shapes formed on both sides, as shown in FIG. 71, as shown in FIGS. This shows a state in which a polishing machine is used to polish using upper and lower wrapping plates 17 and 18. As described with reference to FIG. 72, what is shown in FIG. 80 is that upper and lower wrapping plates 17 and 1
A state in which the abrasive 65 such as cerium oxide is trapped by the polishing pressure of 8 and the inside of the concave lens is gradually polished from above and below by the frictional resistance of the trapped abrasive 65 inside the concave lens. ing.

FIG. 81, FIG. 82 and FIG. 83 show processing means for RIE processing from the back surface of the quartz plate 13 having the concave lens shape or the front surface having the concave lens shape. Generated by performing RIE processing after removing 19 μm using
Upper and lower lapping is performed to remove a 0.25 μm processing-affected layer (oxide film, or compound layer, or amorphous layer) using a double-side polishing machine as described in FIG. A state in which polishing is performed using the plates 17 and 18 is shown. As shown in FIGS. 81 and 82, the concave lens shape formed on the quartz plate 13 is turned upward, and the surface on which the concave lens shape is formed is formed using the upper wrapping plate 18. The lower surface of the quartz plate 13 forming the
In the case of performing the polishing process by using, the polishing process is performed. Since the margin is as small as 0.25 μm, both the upper and lower wrapping plates 17 and 18 may be the wrapping plates 17 and 18 on which the suede is pasted. But,
If possible, the lower wrapping plate 17 is made of a metal plate made of a casting or the like, or the wrapping plate 17 made of a metal plate such as tin is used. Suede 15
Even when using the lapping plate 18 with affixed thereon and polishing using a polishing agent such as cerium oxide as the polishing agent 65, the thickness of the vibrating portion is extremely thin, 0.5 μm. Polishing can be performed without breakage. As shown in FIG. 83, when the concave lens shape formed on the quartz plate 13 and the front surface forming the concave lens shape and the rear surface are alternately arranged, both the upper and lower wrapping plates 17 and 18 Polishing may be performed using the wrapping plates 17 and 18 to which the suede 15 is attached. FIGS. 82 and 83 show that an upper and lower wrapping plate 17 is provided inside a concave lens shape formed on a quartz plate 13 by an abrasive 65 such as cerium oxide as described in FIG. The polishing pressure from above and below 18 confines the abrasive 65 to maintain a balance between the internal pressure and the polishing pressure inside the concave lens shape having an extremely thin vibrating portion and a thickness of 0.5 μm. The suede 1 on the upper and lower wrapping plates 17 and 18
5 is used, or the wrapping plates 17 and 18 of other metal plates are used, even if the quartz plate 13 having the concave lens shape is formed to the limit, for example,
Even if processed to a thickness of 0.1 μm or less, there is no breakage.

[0082]

According to the present invention, a chemical Wet Et is formed in a concave lens shape.
Using a ching process, or a mechanical process, or other means, a quartz plate processed into a concave lens shape is directly planetary-moved using a carrier, and two upper and lower wrapping plates are used. Grinding and polishing using a double-side polishing machine at the same time from the top and bottom of the surface having the concave lens shape and the rear surface having the concave lens shape have the following advantages. The first point is that the thickness of the quartz plate is increased by the depth dimension forming the concave lens shape, which is the same as above. Therefore, it is easy to process only the vibrating part as thin as possible. I can do it. Second
The point is that the holding portion, which is the outer peripheral portion other than the vibrating portion, becomes thicker by the depth of the concave lens shape. For example, even if the vibrating portion is as thin as 0.1 μm, Thus, both sides can be directly polished using a carrier and a lapping machine (the limit of the carrier is around 30 μm). The third point is that the upper and lower lapping plates of the quartz plate processed into a concave lens shape are alternately formed with the front surface (omorimen) processing the concave lens shape and the back surface processing the concave lens shape. On the top, a quartz plate forming a concave lens shape is alternately arranged on the front and back sides in such a ratio that the weight is applied to the upper and lower wrapping plates at the same rate. Since the weight applied to the lapping plate is exactly the same, it is easy to measure the margin when processing, and it is possible to perform highly accurate and uniform processing. The fourth point is that the upper and lower wrapping plates are alternately arranged so that the same ratio of weight is applied thereto, and the weight is adjusted to adjust the weight so that the concave lens shape is formed on the quartz plate and the concave lens shape is formed on the surface. , And the back of the concave lens shape,
Since the size of the margin can be the same, the thickness of the holding portion (for example, about 60 μm) which is the outer peripheral part is large, and the vibration part is extremely thin (for example, thin to about 0.1 μm). , A quartz resonator with a concave lens shape,
It can be processed in large quantities at low cost. The fifth point is that since the abrasive is naturally confined inside the concave lens shape of the quartz plate formed by the concave lens shape by the action of the polishing pressure, by reinforcing the inside of the concave lens shape, it is as thin as possible, for example. , A crystal oscillator of 0.1 μm or less (oscillation of 16 GHz or more with a fundamental wave)
It can be manufactured with high accuracy. As described above, the five effects are generated. If the front and back surfaces of the quartz plate having the concave lens shape are not arranged alternately, grinding and polishing cannot be performed. The front and back surfaces may be used. Also, rosin, Ag,
By injecting an adhesive such as arose, the strength inside the concave lens shape can be reinforced.

A quartz plate processed into a flat plate shape or a concave lens shape is processed by using a processing aid assembled using a first processing aid and a second processing aid,
Or processing using a third processing aid, or processing aids of other shapes, using a combination of double-sided polishing machine, grinding and polishing, very thin, flat shape, Alternatively, it is possible to manufacture a large amount of highly accurate quartz plates in which the vibrating portion is formed in an extremely thin concave lens shape at a low cost.

A first processing aid forming a groove;
In the case of a processing aid assembled using the above-mentioned two parts of the second processing aid having a cylindrical shape, the two parts are flat, so a double-side polishing machine or the like was used. Since the polishing process can be easily performed by using the polishing means of the plane polishing process, it is possible to easily produce a processing auxiliary tool which has good parallel accuracy and low cost without limit. Since the processing aids are consumables, it is important that they have high accuracy and low cost.
In addition, the third processing aid has the same shape as the second processing aid, and thus has the same reason as described above.

Without using the processing means of RIE processing, a chemical Wet Etchi
Using a processing means of ng processing, a concave lens type shape (inverted M
After forming the (ESA type shape), using the first processing aid and the processing aid formed using the second processing aid, or using the third processing aid, or Polishing both sides of the concave lens-shaped shape and one side of the processing aid using a double-sided polishing machine using a processing aid of another shape forms a crystal plate as thin as possible. The vibrating portion that is being polished can be polished, and has the following advantages. Even if the vibrating part of the quartz plate is polished as thin as possible,
First, since the concave lens shape is formed by the processing means of the chemical wet etching process, the outer peripheral portion is thicker than the vibrating portion, so that there is no difficulty in handling, thereby polishing the extremely thin vibrating portion. Can be processed. Even without using the processing means of RIE processing, it is possible to polish a large-diameter quartz plate of 1 inch to 2 inches or more without causing distortion in the quartz plate. This is because they can be placed (just placed) and polished. In the processing means of the RIE processing, the influence of the high heat generated when the ion particles collide with the quartz plate and the vibration caused by the impact when the ion particles collide with the quartz plate extremely reduce the size of the ion plate on the quartz plate. The occurrence of small cracks causes damage to the crystal structure of the quartz plate, but the mechanical polishing means has the advantage that damage to the crystal structure of the quartz plate hardly occurs. The processing means of the chemical wet etching processing is a processing method that does not have a bad influence on the crystal structure of the quartz plate as much as the processing means of the RIE processing, but has poor electrical characteristics as compared with the mechanical polishing processing. . The above processing means is a processing means capable of extremely thin and polishing the quartz plate, so that it is not only placed on the processing aid, but also on the surface of the processing aid, agar such as Agarosc, pine resin, or Even if it is pasted using an adhesive such as paraffin and polished, it is extremely thin (for example, 1
(Thickness inside and outside of μm) Since polishing can be performed, if the diameter of the vibrating portion is 100 times 1 μm, the portion vibrates. Therefore, even if a little distortion occurs in the length direction, there is no problem. Naturally, if the vibrating part is thick, the diameter in the length direction becomes large, so that the influence of the distortion also increases, so that the distortion becomes a problem. This is also an advantage that the vibration part can be made as thin as possible. When a concave lens-shaped surface is pasted on the surface of a processing aid using agar such as Agarose, rosin, or paraffin, a plurality of (for example, , Several tens to several hundred
Unless the quartz plate having the concave lens shape is attached to the surface of the processing aid, the air inside the concave lens shape expands due to heat (about 70 ° C.). It is very difficult to stick them one by one to the processing aid. If a quartz plate is polished by using only two processing means, a chemical wet etching processing means and a mechanical polishing processing means, a quartz oscillator or a quartz resonator may be used. Good electrical characteristics,
Oscillates a waveform of frequency. It is better not to use the RIE processing means as much as possible, but if it is used for a short time, there is no problem.
If the processing means for processing is used as a processing means for rough processing and a processing means for fine adjustment, the processing means for RIE processing is an excellent processing means. Since the above processing means can correspond to a quartz plate (base) of 1 inch to 2 inches or more, several hundred to several thousand pieces are manufactured from one quartz plate from one quartz plate. It is also a processing technology that can do it.

The object to be polished by the piezoelectric element is etched and processed into a concave lens shape, and thereafter, a final polishing process is performed by using a double-side polishing machine, a single-side polishing machine or other polishing means. By doing so, it is possible to form a smooth line that cannot be formed by etching, and thus it is easy to form an electrode by vapor deposition. Furthermore, by this, by polishing from both the front surface and the back surface processed into a concave lens shape, there is an advantage that an extremely thin, high-frequency crystal resonator can be processed, and auxiliary vibration is reduced. .

Since piezoelectric materials, especially quartz, are hard and brittle materials, the processing methods are limited to lapping and etching by RIE or chemical wet etching, particularly chemical wet etching. Therefore, there was a limit to thinning, so utilizing the advantages of both, etching and polishing by a new RIE process, a processing method combined with chemical Wet Etching, or etching and RIE processing By developing piezoelectric element processing technology such as quartz, which is a processing method that combines polishing and chemical wet etching, the thickness is 0.125 μm (natural vibration frequency about 12.0 GH).
z) Ultra high performance, high frequency vibrator was developed. Further, by using a processing technique that repeats the combined use of etching, polishing, or chemical wet etching by RIE processing, or the combined use of etching, polishing, chemical wet etching, or RIE processing by RIE processing. , Future, 0.
It is also possible to develop an oscillation element of the order of 06 μm (natural oscillation frequency of about 24,0 GHz). When the quartz plate is thinned to the limit and the natural vibration frequency is increased, the diameter of the vibrating portion of the quartz plate vibrates if it is 100 times or more the thickness of the vibrating portion. The higher the value, the smaller the diameter of the vibrating part, so the area of the quartz plate decreases in proportion to the natural vibration frequency. That is, as the frequency is increased, the cost per area of the quartz plate can be reduced at a lower cost. Furthermore, the higher the frequency, the higher
It has the advantage of being a high value-added product.

RIE processing or chemical wet etching processing is performed on the concave lens shape, the convex lens shape, or the flat plate shape, and the processing of the back surface of the surface on which the concave lens shape, the flat plate shape, or another shape is formed is performed. In the etching process by RIE process or other etching means,
If the concave lens-shaped shape, or the back surface of the flat plate shape is formed, the entire surface of the back surface is reduced to a certain thickness, and then, as a subsequent processing means, mechanical polishing is performed to process the quartz plate. For example, when a quartz plate having a thickness of 75 μm and a concave lens shape with a depth of 25 μm formed on a quartz plate having a thickness of 75 μm and leaving the thickness of the vibrating portion at 10 μm, the remaining remains at 40 μm.
Of the remaining 40 μm, 35 μm of the remaining 40 μm was reduced from the back surface of the concave lens type shape by means such as RIE processing, plasma etching, or chemical wet etching only from the back surface. After shaving off, the remaining 5 μm is polished by mechanical processing, resulting in several μm after processing by RIE processing, chemical wet etching, plasma etching, or the like.
The unevenness of m (deteriorated layer) can be removed by machining, and the processed surface can be polished to a mirror surface. According to the above processing method, since the portion to be machined is polished only for about 5 μm, the distortion is completely
Or there is an advantage that hardly occurs. Furthermore, when the thickness is 75 μm or more, for example, even when the thickness is 100 μm, it is removed by etching by RIE processing.
35 μm if the margin is 75 μm
m was 60 μm when the thickness was 100 μm.
m, so that even if the thickness is reduced from 35 μm to 60 μm by etching by RIE processing, there is no significant effect. This is because irregularities of several μm formed by etching by RIE can be removed using mirror polishing in subsequent mechanical polishing. If the thickness of this quartz plate is 7
A quartz plate having a thickness of 100 μm or more (for example, a substrate having a diameter of 2.0 inches or more and a large diameter) can be processed more easily than a case of 5 μm. The larger the diameter of the quartz plate, the thicker the quartz plate. That is, the advantages of the present invention can be summarized in the following four points. Since it is possible to cope with a base of a quartz plate having a large diameter of 2.0 inches to 3 inches or more, an oscillator that oscillates at a high frequency with low cost and high added value can be obtained. Even if the thickness of the crystal plate becomes thicker, at all or almost,
Since it is a processing method of processing extremely thin without generating distortion, a crystal plate (base) thin with a large diameter of 2.0 inches to 3 inches or more can be manufactured. Etching and polishing combined by RIE processing,
Or etching / polishing using RIE processing
Since it is a processing method using both chemical wet etching and RIE processing, it can be processed as thin as possible. One side or both sides can be processed to form a concave lens shape or a convex lens shape with high precision, and a flat plate shape can also be processed. To be able to achieve the above technology,
Since the thickness of the quartz plate is around 50μm to 10μm, it is not necessary to use the processing aid of the present invention. However, if the precision is high and the cost is low, the present invention By using the processing aid of (1), processing of 2.0 inches to 3 inches or more, which is an extremely thin and large-diameter base, can be easily performed.

In the case of the Plano-Convex shape, if a certain shape of the Plano-Convex shape is formed, RIE processing or the like is performed from the back surface of the Plano-Convex shape. Perform an etching process, and use the etching process in combination with a single-side polishing machine or other polishing means to make Plan
By processing and polishing the back surface of the o-Convex type shape, the Plano-Conv is extremely thin easily.
An ex-shaped shape can be formed. Furthermore, Bi-C
In the case of the ovex type shape, the Bi-C
If an onvcx type shape is formed, Bi-Conve
After performing an etching process such as RIE process from both surfaces of the surface forming the x-shaped shape, after forming an extremely thin Bi-Convex-shaped shape from both surfaces to a similar shape, Bi-Convex type shape, mechanically polished from both sides using a double-side polishing machine, or generated by RIE processing using chemical Wet Etching processing means, By removing the affected layer, a vibrator having good electrical characteristics can be manufactured.

When a quartz plate is processed into a concave lens shape by RIE using a fluorine-based gas such as C ₂ F ₆ or a chlorine-based gas or a gas such as argon,
Apply resist and mask to form thick, metallic coating or other material, forming coating, or quartz plate, or quartz plate, or tungsten seaside, or iron Or, using ultrasonic processing or other materials, for example, formed a hole of about 0.5mm, using a quartz plate, or quartz as a mask plate,
After forming a concave lens shape of 15 μm or more on quartz, RI
Degraded layer generated by E processing (amorphous quartz,
Or a mechanical polishing process to remove the amorphous portion which has been changed to a single crystal of silicon, a polycrystal of silicon, or an oxide of silicon, or another oxide). By compensating for the shortcomings, even if RIE processing technology is used, it is possible to manufacture a crystal resonator and a crystal resonator having excellent electric characteristics of a crystal, high frequency, and high frequency. It should be noted that the current technology uses a metal coating
When the E processing is performed, the depth is 15μ due to the limit of the metal film.
Although the limit is to form a concave lens shape of m, the quartz plate or quartz plate or other material of the present invention has:
For example, if a quartz plate or the like having a hole of about 0.5 mm with a hole is used as a mask plate, there is no limit to the depth, and there is an advantage that a concave lens shape of any depth can be formed.

When a film is formed by applying a resist on the surface of a quartz plate, DuPont MRC Dry Film Co., Ltd.
Has been released, the product name is Liston FRA063-50
(Resist thickness 50 μm), Liston FRA063-
When a dry film of 50 × 2 (resist thickness 100 μm) or RISTON FX-150 (resist thickness 50 μm) is attached to a quartz plate and resist is applied on the quartz plate surface, the surface of the quartz plate can be easily obtained. A resist can be formed thereon, and thereafter, a mask is applied to expose a necessary portion or an unnecessary portion, and then exposed using an exposure apparatus. A necessary portion is developed and removed using a solution such as sodium carbonate and sodium hydroxide, and then etched using a processing means of RIE processing, and then again subjected to finishing polishing or chemical wet processing. If it is a processing method of performing Etching, the capital investment funds are extremely small, with a large amount, extremely thin, high precision, crystal oscillator,
There is also an advantage that a quartz resonator can be manufactured.

At present, it is an AT-cut crystal having a diameter of 1 inch.
In the case of ch or 2 inch, the thickness of the quartz plate is the thinnest, about 75 μm, but at the manufacturing limit, this 75 μm
However, if it is attempted to produce an extremely thin quartz crystal unit in mass production, which is the thinnest and thickest, then in the case of the AT cut, a base having a diameter of 2 inches will be used. The problem here is that making a crystal unit that is extremely thin, high in accuracy and high in frequency is incompatible with manufacturing a crystal unit at low cost in mass production. . As a means to solve the above problem, to process the crystal plate extremely thinly, use the processing aid of the present invention alone, or for the purpose of processing the crystal plate extremely thinly. By using RIE processing and mechanical polishing in combination with the processing aid and RIE processing, and performing RIE processing and mechanical polishing, the thickness is 2 inches in diameter. The thickness of the substrate is 75 μm, and there is a manufacturing limit. When the thickness of the substrate is 10 μm to 20 μm or less and the diameter of the substrate is 2 inches, a concave lens shape is formed by subsequent processing. In such a case, the depth of forming the concave lens shape to be removed by chemical wet etching or RIE processing can be reduced, so that the vibrating portion forming the quartz crystal resonator is formed in the concave lens shape. Surface accuracy is further improved. In addition, by using the processing aid of the present invention, it is easy to make a base having a thickness of about 10 μm and a diameter of 2 inches, so that one or both sides can be processed into a concave lens shape. Without doing
High frequency (for example, AT
When the thickness of the quartz plate is 10 μm by cutting, 167 MH
There is also an advantage that the quartz oscillator of Z) can be manufactured inexpensively and in large quantities by a processing method using a combination of RIE processing or chemical wet etching processing and polishing processing.

At the present time, when the diameter of the quartz plate is 1 inch to 2 inches, the thickness of the quartz is about 75 μm, and there is a manufacturing limit. Also, when the diameter of the quartz is around 3 mm, Has a manufacturing limit of about 24 μm,
Double-side polishing machine using the processing aid of the present invention,
Or mechanical polishing, such as a single-side polishing machine, and R
The above limitation can be solved by using a chemical etching means, ie, IE processing or chemical wet etching. The limitation of the production as described above, using the processing aid of the present invention, using a mechanical polishing means or may not use the processing aid, is a mechanical polishing processing means, for example, float polishing Using a polishing method or another polishing method in combination with RIE processing or chemical wet etching, (mechanical polishing processing → RIE processing → mechanical polishing processing), (or mechanical polishing processing → RIE processing → mechanical polishing) Processing → Chemical Wet Etc
ing processing), even on a substrate with a diameter of 1 inch to 2 inches, the thickness is easily around 10 μm,
Since a quartz plate having a thickness can be manufactured, there are the following advantages. Even if the substrate is 1 inch to 2 inches or more, the thickness is 10
Since a flat quartz plate inside and outside of μm can be processed, 167M
It is possible to manufacture a large number of crystal resonators at Hz or more at a low price. At present, even if the diameter is 3 mm, there is a manufacturing limit of 24 μm, so at most around 70 MHz,
There are manufacturing limitations. Mechanical polishing, RIE, and chemical We
Since it is a processing method that is used together with t Etching,
There is also an advantage that distortion due to polishing does not occur. The parallelism and surface accuracy of the finished quartz plate are good. This processing means can be used for piezoelectric materials other than quartz.

At present, in the case of a quartz plate having a diameter of 1 inch to 2 inches, a quartz plate having a thickness of 75 μm or less cannot be manufactured. 75μ thick quartz plate
Although there is a manufacturing limit to m, a subsequent processing means, chemical wet etching, causes excessive and excessive etching, so that a hole (pinhole) is generated. Is 2 inches, and if a quartz plate with a thickness of 10 μm to 20 μm can be manufactured, there is little margin for the subsequent etching process. By reducing the size, extremely thin and highly accurate processing can be performed. Furthermore, in order to manufacture an extremely thin quartz plate having a diameter of 1 inch to 2 inches and a thickness of the quartz plate of about 10 μm to 20 μm, double-side polishing using a processing aid is required. RIE using a machine, or a single-side polishing machine, or other polishing means, and a fluorine gas such as C ₂ F ₆
Processing, or chemical wet etching together,
By alternately repeating, the margin (thickness for polishing) by mechanical polishing is reduced as much as possible,
By making the margin as large as possible by etching processing such as RIE processing, it is revolutionary, extremely thin,
A large number of crystal resonators having a large diameter and high precision, which is a crystal plate, can be easily manufactured. further,
The diameter of the quartz plate is, for example, 1 inch and the thickness is 10 μm
If the crystal plate (base) is made with a thickness of 10 μm, if the diameter of the crystal plate is 100 times the diameter, it will vibrate as a vibrator, so it only has to have an area of 1 mm x 1 mm. When a crystal plate (base) having a thickness of 10 μm and a diameter of 1 inch is formed, a crystal oscillator of 167 MHz can generate 400 or more crystal vibrations from a 1-inch crystal plate and a single crystal plate. Since it is possible to produce a crystal unit, it is possible to manufacture an extremely inexpensive, highly accurate crystal unit. When the thickness of the quartz plate is 10 μm and a substrate having a diameter of 1 to 2 inches is formed, the resist can be cut using a machine such as a dicing saw without cutting, similarly to the means for manufacturing a semiconductor. Apply or resist using a dry film (manufactured by DuPont MRC Dry Film Co., Ltd.), resist in a round shape with a diameter of 1 mm, and after exposure, leave the necessary part of the resist. Using the processing means of RIE processing, the diameter is 1mm
No matter how small the diameter, no matter how large the number of finished pieces, it is easy to use a round shape, a square shape, or any other shape This is also a processing method that allows the quarrying to be performed in a short time using RIE processing because the quartz plate is extremely thin (thickness is about 10 μm). As for the shape of the quartz resonator and the quartz resonator, a round shape is also a shape that oscillates the best wave-shaped frequency.

When a quartz plate, or silicon, gallium arsenide, or other electronic material is mechanically polished, the lateral holding and movement can be performed by using the processing aid of the present invention. The side wall portion of the second processing auxiliary tool or the third processing auxiliary tool, which forms the auxiliary tool, is used as a stopper to be held, and the vertical holding and the movement are controlled by the vacuum suction force. If a crystal plate or the like is fixed to the processing aid by using it, even if a very weak vacuum suction force is used, the crystal plate etc. Because it can hold the suction force of suction together, it can be used to
Since it can be absorbed by the processing aid, the stress generated by the vacuum suction force is extremely small, so the distortion given to the quartz plate becomes extremely small, and the vacuum suction force is used. I can do it. Also, by using the two effects of the processing aid and the vacuum suction force together, the quartz plate is fixed to the processing aid, and the quartz plate is mechanically machined using a single-side polishing machine. This is an advantage that can be polished.

When the extremely thin, quartz plate is polished and the quartz plate is fixed by using a processing aid having grooves formed therein, an adhesive layer is formed on a side wall of the quartz plate to form a quartz plate. If you fix the plate to the processing aid, regardless of the thickness of the quartz plate,
Since the thickness of the adhesive layer can be increased, the adhesive layer does not peel even when the adhesive layer becomes thin.

When the quartz plate is polished using the processing aid formed by using the first processing aid and the second processing aid, the crystal plate is attached to the processing aid with no adhesive. Without using, a quartz plate can be fixed to the processing aid and polished using a double-sided polishing machine, so that the occurrence of distortion caused by using an adhesive does not occur, High-precision processing can be performed.

When a piezoelectric material such as quartz is processed by RIE, if a mixed gas of a fluorine-based gas of C ₂ F ₆ and an argon gas is used as the fluorine-based gas, the finished surface of the processed surface is obtained. The use of C ₂ F ₆ as compared to CF ₄ or the like has a much higher surface finish accuracy.

When a piezoelectric material such as a quartz plate or other electronic material is machined by RIE processing, ion particles collide. On the surface of a quartz plate or the like, the ion Due to the effect of the kinetic energy of the particles, on the surface of the quartz plate,
The quartz plate is melted, and a temperature rise above the Curie temperature (about 495 ° C.) occurs on the surface of the quartz plate. On the surface of the quartz plate, the quartz plate is gasified and vaporized, and the particles of the quartz plate become particles. , Fluorine-based ion particles, or chlorine-based ion particles,
Or, due to the chemical reaction with ion particles such as argon, or other ion particles, etc., and the phenomenon of blowing has occurred. On the surface of the quartz plate where the particles were accelerated and collided, an extremely thin amorphous (non-crystalline) film is formed on the surface of the quartz plate, so a piezoelectric material such as a quartz plate A phenomenon in which the electrical characteristics of the material extremely deteriorates occurs. As a means for solving this phenomenon, an extremely thin amorphous film or an oxide film ( Portion) is removed using mechanical polishing means or by chemical Wet Etch.
The electrical characteristics of the quartz plate are improved by removing the amorphous portion formed on the surface of the quartz plate by using a chemical etching means such as ing. Original electrical characteristics can be exhibited. still,
As a means for removing the amorphous portion generated on the surface of the quartz plate, rather than chemical wet etching,
It is better to remove the amorphous portion by using a mechanical polishing processing means from the viewpoint of the manufacturing process, but the yield is better.
It is easier to remove the amorphous portion using Etching. However, it is necessary to finely adjust the frequency by using RIE processing means or chemical wet etching means as a means of finely adjusting or finely adjusting the frequency. As the polishing means with the best mechanical characteristics, the mechanical polishing means can exert the electrical characteristics of the quartz plate. It is better to use
Using chemical WetEtching or RIE
Even if fine adjustment is made using processing, the electrical characteristics of the quartz plate hardly deteriorate, so in the final finishing process,
Chemical Wet Etching or RIE processing may be used.

Up to the present time, the processing means of RIE processing is an excellent, processing technique, but the processing means of RIE processing is used in the electronic materials and the piezoelectric material industry, especially the quartz industry, which is the piezoelectric industry. For example, when RIE processing is performed on a quartz plate, ion particles cannot be accelerated to a speed close to the speed of light, but usually, the ion particles used in RIE processing are electrodes. A voltage of about 600 V is applied in between, and a current of about 240 W to about 300 W is applied to the ion particles at a speed of 10 k / sec.
The processing means for accelerating fluorine-based or chlorine-based ion particles at a speed of m to several hundred km and causing them to collide with the surface of the quartz plate. On the very thin surface, at the moment when the ion particles collide, the kinetic energy of the ion particles generates several thousand degrees Celsius (for example, the temperature rises to about 3000 degrees Celsius from 1,500 degrees Celsius. , Quartz and quartz are melted, the melting temperature is 1,140 ° C.), on the surface of the quartz plate due to heat, the surface of the quartz plate is melted, On the surface of the quartz plate, an extremely thin amorphous (eg, about 0.2 to 1.0 μm) amorphous (not crystalline) amorphous quartz or fluorine ion is chemically separated from the oxygen and quartz of the quartz. By reacting, Parts of the silicon film, or the other oxide film), the damaged layer can be,
A phenomenon occurs in which the original electrical characteristics of the crystal are extremely reduced, and the shape of the oscillation waveform is deteriorated. Further, the processing-affected layer (amorphous portion) generated when processing the quartz plate using the RIE process is slightly proportional to the processed thickness of the quartz plate, but hardly proportional thereto. Thus, for example, when the quartz plate is shaved off by 60 μm, when it is 10 μm, or when it is several μm, the thickness of the work-affected layer is about 0.2 μm to several μm, which is almost the same thickness. A work-affected layer occurs. However,
Initially, fine scratches and irregularities formed by enlarging impurities when mechanical polishing is performed increase in proportion to the thickness to be removed. The ratio is 10 μm using RIE processing. When scraping, irregularities of about 0.1 μm to 1.0 μm are formed.
%, Which is an area that can be neglected. Also, the thickness of the unevenness (deformed layer) generated when processing the quartz plate using the processing means of RIE processing is determined by the ion The speed at which the particles are accelerated and collided with the quartz plate is several km / sec, 10 km / sec, and 100 km / sec. When it is desired to increase the size (when it is desired to reduce the size of the affected layer), it is preferable that the acceleration of the ion particles be made to strike the crystal plate at a low speed. However, the collision of the ion particles is still the same, so that the size of the ion particles becomes larger or smaller, and irregularities (work-affected layers) occur. As a means for solving the above, an amorphous (work-affected layer) formed on the surface of a quartz plate generated by RIE processing
Of the part, mechanical polishing means, or chemical Wet
By removing using Etching means,
Originally, it was discovered that the electrical characteristics of quartz can be exhibited, which means that high-precision machining such as thinning of future quartz oscillators and quartz resonators will be performed. In addition to the development of technology, the impact on the industry of processing electronic materials and piezoelectric materials is incalculable, the development of processing technology, and in the future, the fundamental wave for the future communication and electronic industries, The fact that it has been found that a crystal resonator and a crystal resonator capable of oscillating at several tens of GHZ or more can be easily manufactured is a fundamental influence of a revolutionary and industrial revolution that will occur in the future. Is a processing technology that will give In addition, as a means for removing an affected layer (amorphous or oxide film, or a compound layer) generated on the surface of the quartz plate by the processing means of the RIE processing, a mechanical polishing means is used. Any machine may be used, and it is only necessary to remove about 0.1 μm to 1 μm as the thickness of the quartz plate, so it is cut small, for example, when the thickness is 10 μm, It is possible to cut the processed layer by ultrasonic vibration, barrel polishing, or the like by cutting it into a round shape or a square shape with a diameter of 1.2 mm or 2 mm, or even manually by humans. It can be done. Also, chemical Wet
Even if the etching means is used, it is possible to easily remove the deteriorated layer, but the electrical characteristics inherent in quartz can be sufficiently exhibited by mechanical polishing. The use of the processing means to remove the processing-damaged layer has better electrical characteristics.

As described above, according to the present invention, it is possible to provide a piezoelectric element and a method of processing the piezoelectric element which are thinner than conventionally difficult thicknesses, thereby providing a vibrator with less auxiliary vibration. can do.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing an outline of a processing method of the present invention.

FIGS. 2A and 2B show a first example of manufacturing a quartz oscillator, and FIG.
7A shows a cross-sectional shape of the vibrator, FIG. 6B shows a Nomarski micrograph of the vibrator, and FIG. 6C shows a reactance frequency characteristic. The surface material is AT cut, the thickness of the material is 103μ
m, the diameter is 5 mm, the processing size is 25 μm in thickness, and the radius of curvature is 30 mm.

FIGS. 3A and 3B show a second example of manufacturing a crystal unit, and FIG.
Shows the cross-sectional shape of the vibrator, and (b) shows the reactance frequency characteristics. The surface material is AT cut, the thickness of the material is 103 μm, the diameter is 5 mm, the processing size is 9 μm in thickness, and the radius of curvature is 200 mm.

FIG. 4 shows a third example of manufacturing a quartz oscillator, in which (a)
Shows the cross-sectional shape of the vibrator, and (b) shows the reactance frequency characteristics. The surface material is AT cut, the thickness of the material is 77 μm, the diameter is 5 mm, and the processing size is 27 μm.

FIG. 5 is a diagram showing a reactance frequency characteristic of a crystal resonator having an AT cut and a thick quartz resonator.

FIG. 6 is a diagram showing a reactance frequency characteristic of a quartz crystal unit having a thick AT-cut surface material.

FIG. 7 is a diagram showing the reactance frequency characteristics of a quartz crystal unit having a thin AT-cut surface material.

FIG. 8 is a diagram showing a reactance frequency characteristic of a thin quartz crystal unit in which a surface material is AT-cut and has a small thickness.

FIG. 9 is a diagram showing the reactance frequency characteristics of a quartz oscillator having a thinner AT material and a thinner thickness.

FIG. 10 is a diagram showing the reactance frequency characteristics of a quartz oscillator having a thinner AT material and a thinner thickness.

FIG. 11 is a sectional view of a first processing aid in the processing method of the present invention.

FIG. 12 is a sectional view of a second processing aid in the processing method of the present invention.

FIG. 13 is a cross-sectional view of a state in which a second processing aid and a quartz plate are set on the first processing aid.

FIG. 14 is a sectional view showing another example of the processing apparatus of the present invention.

FIG. 15 is a sectional view showing another example of the processing apparatus of the present invention.

FIG. 16 is a cross-sectional view showing a state where the processing apparatus of the present invention is sandwiched between lapping plates.

FIG. 17 is a plan view of another processing aid in the processing apparatus of the present invention.

FIG. 18 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

19 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 20 is a plan view showing the movement of the wrapping plate.

FIG. 21 is a plan view showing the movement of the wrapping plate.

FIG. 22 is a top view showing an embodiment of the present invention.

FIG. 23 is a sectional view showing an embodiment of the present invention.

FIG. 24 is a sectional view showing an embodiment of the present invention.

FIG. 25 is a cross-sectional view showing an example of the processing apparatus of the present invention.

FIG. 26 is a cross-sectional view of a quartz plate manufactured by using FIG. 25 or another apparatus.

FIG. 27 is a cross-sectional view showing another example of the processing aid.

FIG. 28 is a cross-sectional view showing another example of the processing aid.

FIG. 29 is a cross-sectional view showing another example of the processing aid.

FIG. 30 is a sectional view showing an embodiment of the present invention.

FIG. 31 is a top view showing an embodiment of the present invention.

FIG. 32 is a sectional view showing a processing method according to an embodiment of the present invention.

FIG. 33 is a side view showing a working tool according to an embodiment of the present invention.

FIG. 34 is a side view showing an example of a grindstone according to an example of the present invention and a sectional view taken along the line AA of the example.

FIG. 35 is a cross-sectional view showing a processed embodiment in the embodiment of the present invention.

FIG. 36 is a side view and a plan view showing another example of the grindstone in the embodiment of the present invention.

FIG. 37 is a sectional view showing another example of the working tool according to the embodiment of the present invention.

FIG. 38 is a sectional view showing another example of the working tool according to the embodiment of the present invention.

FIG. 39 is a sectional view showing another example of the working tool according to the embodiment of the present invention.

FIG. 40 is a side view and a top view showing an actual production drawing of the working tool in the embodiment of the present invention.

FIG. 41 is an enlarged cross-sectional view and a side view showing an actual manufacturing drawing of the working tool according to the embodiment of the present invention.

FIG. 42 is a cross-sectional view showing a processed embodiment in the embodiment of the present invention.

FIG. 43 is a cross-sectional view showing a processed embodiment in the embodiment of the present invention.

FIG. 44 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 45 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG. 13;

FIG. 46 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 47 is a sectional view showing an embodiment of the present invention.

FIG. 48 is a top view showing the embodiment of the present invention.

FIG. 49 is a top view showing the embodiment of the present invention.

FIG. 50 is a sectional view showing an embodiment of the present invention.

FIG. 51 is a sectional view showing an embodiment of the present invention.

FIG. 52 is a sectional view showing an embodiment of the present invention.

FIG. 53 is a sectional view showing an embodiment of the present invention.

FIG. 54 is a sectional view showing an embodiment of the present invention.

FIG. 55 is a sectional view showing an embodiment of the present invention.

FIG. 56 is a sectional view showing an embodiment of the present invention.

FIG. 57 is a diagram showing a reactance frequency characteristic of a quartz oscillator which is made of an AT-cut material and has a small thickness.

[FIG. 58] The material is AT cut, and the thickness is much thinner.
FIG. 3 is a diagram showing the reactance frequency characteristics of the crystal unit.

[FIG. 59] The material is AT cut, and the thickness is much thinner.
FIG. 3 is a diagram showing the reactance frequency characteristics of the crystal unit.

FIG. 60 is a diagram showing a reactance frequency characteristic of a crystal unit, which is made of an AT-cut material and has a further thinner thickness.

FIG. 61 is a sectional view and a top view showing a processing method according to an embodiment of the present invention.

FIG. 62 is a sectional view showing a processing method according to an embodiment of the present invention.

FIG. 63 is a cross-sectional view showing a processing method according to an embodiment of the present invention.

FIG. 64 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 65 is a cross-sectional view and a top view showing a processing method according to an embodiment of the present invention.

FIG. 66 is a cross-sectional view and a top view showing a processing method according to an embodiment of the present invention.

FIG. 67 is a cross-sectional view and a top view showing a processing method according to an embodiment of the present invention.

FIG. 68 is a cross-sectional view and a top view showing a processing method according to an embodiment of the present invention.

FIG. 69 is a cross-sectional view and a top view showing a processing method according to an embodiment of the present invention.

70A and 70B are a cross-sectional view and a top view illustrating a processing method according to an embodiment of the present invention.

FIG. 71 is a cross-sectional view showing a working method according to an embodiment of the present invention;

FIG. 72 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 73 is a cross-sectional view showing a working method according to an embodiment of the present invention;

FIG. 74 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 75 is a cross-sectional view showing the working method according to the embodiment of the present invention;

FIG. 76 is a cross-sectional view showing the working method according to the embodiment of the present invention;

FIG. 77 is a cross-sectional view showing the working method according to the embodiment of the present invention;

FIG. 78 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 79 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 80 is a sectional view showing a processing method according to an embodiment of the present invention.

FIG. 81 is a cross-sectional view showing a working method according to an embodiment of the present invention.

FIG. 82 is a sectional view showing a processing method according to an embodiment of the present invention.

FIG. 83 is a cross-sectional view showing the working method according to the embodiment of the present invention;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Ball whetstone, 2 spindles, 3 cylindrical magnets, 4 quartz plates, 5 grinding spindles, 6 tool holders, 11 first processing aids, 12 ring or square or other shaped grooves or steps, 13 Quartz plate, 14 circular or other shaped grooves, 15 suede, 16
Hole, 17 lower lapping plate, 18 upper lapping plate, 19 second processing aid, 21 and 54
Cylinder, 22 pressure receiving surface, 23 and 24 electrodes, 25 amplifier, 30 round bar, 31 chuck, 32, 32 ', 3
2 ", 32"'and 32 "" grinding or polishing wheels, 3
2 (a) grooves, 33, 33 'and 33 "machining tools, 3
4 Tool holder, 35 support arm, 36 bearing, 37
Carrier, 38 internal gear, 39 sun gear, 40 air nozzle, 41 fountain nozzle, 42 and 4
3 motor, 44 polishing tool, 45 adhesive tape, 46 hole or space portion, 47 holding portion, 48 fixing frame, 49
Gold wire, 50 electrode, 51 holding part, 52 groove, 53
Smooth line, 55 stopper, 56 holding part, 57
Diamond abrasive, 58 piezoelectric plate, 59 adhesive layer, 6
0 rosin, 61 third processing aid, 62 space part,
Mask plate with 63 holes, 64 holes, 65 abrasives,

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) // H03H 3/02 H01L 21/306 MD

Claims (27)

[Claims] 1. A quartz plate is polished using a double-side polishing machine, a single-side polishing machine, or another polishing machine.
Polished quartz plate (for example, the thickness of the quartz plate is 80 μm
RIE (Reactive Ion Et) from one side or both sides
(Ching) process or the like, and a chemical etching process is performed to reduce the number of
After the removal, irregularities of several μm generated by chemical etching such as RIE (for example, about 0.2 μm to 3 μm when removed by 60 μm by RIE)
Again, a damaged layer or a damaged layer, or unevenness is generated), and then polished again by a double-side polishing machine, a single-side polishing machine, a float polishing machine, or other polishing means. A method for processing a piezoelectric element, comprising processing a piezoelectric material such as silicon or an electronic material such as silicon or gallium arsenide. 2. A ring or square or other shape groove or step is formed on the upper surface of the first processing aid,
The groove or step, a little higher than the depth, a cylindrical or other shape, hard glass, or iron, or other materials, the second processing aid, the groove or step, , Fit, the second of the processing aids, the first
A processing aid from the upper surface, the same as the protruding height, or slightly lower or higher than the protruding height, a disk-shaped or other shape, a piezoelectric element to be polished is installed, the piezoelectric element Using two upper and lower lapping plates, an upper lapping plate (upper upper plate) on the upper surface of the object to be polished and a lower lapping plate (lower upper plate) on the lower surface of the first processing aid, A method for processing a piezoelectric element, comprising polishing an extremely thin workpiece. 3. A liquid such as an aqueous solution is put into a circular or other shaped groove or step formed on the upper surface of the first processing aid, and the lower surface of the object to be polished of the piezoelectric element is placed in the liquid. The piezoelectric element to be polished so that the periphery is in close contact,
The first processing aid and the object to be polished are placed on the first processing aid by merely using the surface tension of the liquid or by freezing the liquid. 3. The method for processing a piezoelectric element according to claim 2, wherein 4. The piezoelectric element to be polished is placed on a hydrophilic thin plate containing water placed on the upper surface of the first processing aid and is contained in the hydrophilic thin plate. 4. The method according to claim 2, wherein the first processing aid and the object to be polished are fixed to each other by using surface tension of water. 5. Processing method of piezoelectric element. 5. A plurality of holes are formed in the first processing aid, and the holes are filled with a viscous substance such as starch syrup, honey, an adhesive bond or grease or other adhesive. The lower surface of the object to be polished is adhered with the viscous substance, or the first processing aid and the object to be polished are separated by the area of a hole by using a vacuum attraction force. The method according to any one of claims 2 to 4, wherein the fixing is performed using an adhesive or a vacuum suction force. 6. The first processing aid and the second processing aid are fixed using rosin, paraffin, starch paste, or another adhesive. The method of the piezoelectric element according to any one of the above items. 7. The first processing aid is made of hard glass,
Or using a metal, such as iron, and manufacturing the second processing aid using a super-steel or iron or hard glass or a material similar to glass. A method for processing a piezoelectric element according to claim 2. 8. A mask is applied to the object to be polished with a mask by masking, and only the center portion is made of, for example, CF ₄ , C ₂ F.
₆ or using such CHF _3, RIE processing, using an ion milling or plasma etching, or other chemical Wet etching means, a flat plate shape, Bi
After processing into a Convex type shape or a concave lens shape (inverted MESA shape), etching is performed using a double-side polishing machine, a single-side polishing machine, a float polishing machine or other polishing means as a subsequent processing means. A method for processing a piezoelectric element, comprising mechanically polishing a processed surface or a processed surface on a back surface. 9. A processing auxiliary tool holds a crystal plate, and one side is polished on one side of a quartz plate, and the other one side is processed on one side of a processing auxiliary tool using a double-side polishing machine. A method for polishing a piezoelectric element, wherein a double-side polishing machine is used as a single-side polishing machine by simultaneously polishing from above and below. 10. A front or back surface of a quartz plate processed into a concave lens shape is held by using a processing aid, one surface of which is a concave or convex surface of the quartz plate, and the other surface is processed. A polishing method for a piezoelectric element, wherein one side of an auxiliary tool is simultaneously polished from above and below using a double-side polishing machine. 11. A quartz plate processed into a concave lens shape, a surface processed into a concave lens shape is held by using a processing aid, one surface is processed into a concave lens shape, and the other surface is processed into a concave lens shape. A polishing method for a piezoelectric element, in which an extremely thin, piezoelectric element is processed by simultaneously polishing one side of the tool from above and below using a double-side polishing machine. 12. One or both surfaces are formed in a concave lens shape, Co
ncavo-Convex type shape or Bi-Conv
A polishing method for a piezoelectric element, in which an ex-shaped quartz plate is simultaneously polished from above and below using a double-side polishing machine to process an extremely thin piezoelectric element. 13. A mortar, paraffin or other resin is injected into the concave lens shape of a quartz plate processed into a concave lens shape to reinforce the strength inside the concave lens shape.
A polishing method for a piezoelectric element, wherein a quartz plate is simultaneously polished from above and below using a double-side polishing machine or a single-side polishing machine, or is polished using a single-side polishing machine. 14. The material of the processing aid is made of hard glass, plastics, or a metal such as super steel or iron, which is hard to be polished with an abrasive such as cerium oxide. 14. The method for polishing a piezoelectric element according to claim 2, wherein a condition is set such that the processing is difficult. 15. A resin material, such as quartz plate, is formed into a concave lens shape by chemical wet etching, plasma etching, machining, or the like. After injecting paraffin or glue or other resin to reinforce the strength inside the concave lens shape, the front and back surfaces forming the concave lens shape are polished at the same time using a double-side polishing machine. Polishing method. 16. A material having a piezoelectric effect such as quartz, lithium niobate, potassium niobate, or another single crystal, barium titanate, piezoelectric ceramics, or other ceramics is provided at the center of the cylinder. A method for processing a piezoelectric element, comprising: forming a pressure receiving surface; and forming a pair of electrodes on the pressure receiving surface. 17. The method for processing a piezoelectric element according to claim 16, wherein the cylinder and the pressure receiving surface are made of an integral material having a piezoelectric effect. 18. A round bar made of a material having a piezoelectric effect, holes are drilled from both ends using a grinding means, and a pressure-receiving surface having a predetermined thickness is formed at the center of the round bar. Furthermore, the air vibrations, which have entered the outer peripheral portion of the pressure receiving surface from the left and right, come and go, so that the air vibration of the cylinder, which has entered the pressure receiving surface from the left and right, can resonate at the central portion. In order to be able to form a hole or space part, the air vibration entered from the left and right of the cylinder,
A method for processing a piezoelectric element, characterized by causing resonance at a central portion of a cylinder to cause a resonance phenomenon and causing a pressure-receiving surface located at the central portion to vibrate more strongly. 19. A cylindrical hole is formed from both ends of a round bar made of a material having a piezoelectric effect by using a grinding means, and a pressure-receiving surface having a predetermined thickness is formed at the center of the round bar. Forming a pair of electrodes on a pressure receiving surface thereof to amplify external air vibration and obtain an electric signal. 20. The grinding means forms a groove on the surface of the barrel-shaped grindstone, and rotates the grindstone by injecting air or liquid into the groove, or uses other mechanical means. 20. The method for processing a piezoelectric element according to claim 19, wherein the barrel-shaped grindstone is rotated. 21. The method for processing a piezoelectric element according to claim 19, wherein the barrel-shaped grindstone is formed using a steel ball close to a true sphere. 22. A central portion of the quartz plate, in which a metal such as gold is used for vapor deposition or plating on a central portion of the quartz plate, and a metal portion is formed using means such as vapor deposition. A method for processing a piezoelectric element, wherein a thin gold wire is connected and used as an electrode of a quartz plate, and a voltage is applied to the quartz plate using the gold wire. 23. A quartz plate is processed into a Bi-Convex type shape, a Plano-Convex type shape, and a concave lens type shape (inverted-mesa type shape) by mechanical polishing or chemical wet etching. , Bi-Convex type shape, Plano-Con
vex type shape, Concavo-Convex type shape,
RIE processing or chemical wet etching processing is again performed from the back surface or both surfaces of the surface forming the concave lens shape, and the Bi-Covex shape, Plan
A method for processing a piezoelectric element, wherein an o-Convex-shaped shape and a concave lens-shaped shape are reduced to a similar shape or relatively reduced, extremely thinned, and then mechanically polished as a finishing process. 24. After processing the quartz plate into a flat plate shape, a concave lens shape, or another shape by RIE processing or other chemical wet etching processing means, the flat plate shape or the concave lens shape is formed. From the back surface of the formed surface, by RIE processing, plasma etching, or other chemical etching means, several tens of μm, shaved, flat plate, or concave lens-shaped back surface of several tens μm
m, RIE processing, or other etching means, the surface of 1μm to several μm formed on the machined surface that has been shaved off, using a mechanical process, about 0.2μm to several μm, polishing processing, In order to polish the back surface forming the flat plate shape or the concave lens type shape to a mirror surface, processing using a processing aid, or without using a processing aid, a flat plate shape or a concave lens type Polishing of the back side of the shape, using a single-side polishing machine, or a double-side polishing machine, or other polishing processing means, polishing from 0.2 μm to several μm, and mirror-finish processing, Method. 25. A mask plate, in which holes are formed in a quartz plate or a quartz plate made of quartz, placed on the quartz plate,
Used as a substitute for masking (metal coating)
A method for processing a piezoelectric element, comprising: performing active ion etching (RIE) processing to form a concave lens shape on a quartz plate. 26. When a piezoelectric material such as quartz is processed by RIE, a mixed gas of a fluorine-based gas such as CF ₄ , CHF ₃ or C ₂ F ₆ and an argon gas is used.
A method for processing a piezoelectric element, characterized in that the processing accuracy of the surface accuracy of quartz or the like is good. 27. Polishing a quartz plate having one or both sides processed into a concave lens shape from the top and bottom simultaneously using a double-side polishing machine to process an extremely thin piezoelectric element. Processing method.