JP2000231121A - Active matrix substrate defect repair method, liquid crystal panel manufacturing method, and active matrix substrate defect repair device - Google Patents

Abstract

(57) [Summary] [Problem] To reliably perform defect correction after completion of an active matrix substrate and before bonding to an opposing substrate. SOLUTION: An active matrix substrate having a pixel electrode 1 on an interlayer insulating film 6 covering a scanning line, a signal line, and a switching element is irradiated with a laser beam of an arbitrary wavelength to the interlayer insulating film 6 to irradiate the interlayer insulating film 6. Is partially removed, a laser beam of an arbitrary wavelength is irradiated on the wiring portion under the defective portion 8 or the removed portion of the interlayer insulating film 6 to remove the defective portion 8 or cut the wiring portion.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to information terminal equipment such as a notebook personal computer, OA equipment,
The present invention relates to a method for manufacturing a liquid crystal panel used for V equipment or the like, a method for correcting a defect of an active matrix substrate used for the method, and a device for correcting the defect.

[0002]

2. Description of the Related Art Liquid crystal display devices utilizing the electro-optical effect of liquid crystal for display devices are currently used in various fields such as information terminal devices such as notebook personal computers, OA devices, and AV devices. .

This liquid crystal display device includes a gate signal line (scanning line) and a source signal line (signal line) crossing each other, a large number of pixel electrodes arranged in a matrix, and switching elements for controlling each pixel electrode. An active matrix substrate and a counter substrate provided with a color filter, a counter electrode, and the like were bonded so that their electrode forming surfaces faced each other with a predetermined gap therebetween, and a liquid crystal layer was sandwiched between the gaps between the two substrates. It has a configuration.

[0004] The manufacturing process of this active matrix substrate is complicated, and is forced to go through many manufacturing processes. Therefore, defects such as mixing of foreign matter, short-circuiting between the pixel electrode and the scanning wiring or signal wiring, short-circuiting between the scanning wirings or between the signal wirings, and the like are likely to occur, and it has been extremely difficult to completely prevent such defects. . Therefore, detecting such defects early and making corrections as needed is a very important task for improving the production yield.

Therefore, conventionally, the active matrix substrate and the opposing substrate are bonded to each other, a liquid crystal is injected to produce a liquid crystal panel, and then a lighting inspection is performed to detect the presence of a line defect or a point defect. If the defect could be corrected, it was corrected.

For example, Japanese Patent Laid-Open Publication No. Hei 3-209422 discloses a method in which a defective portion is irradiated with a laser beam or the like in a state of a liquid crystal panel to perform correction. This correction method will be described below with reference to FIG.

FIG. 5 is a sectional view showing the structure of an active matrix substrate in a conventional liquid crystal panel. This figure 5
In the figure, 1 is a pixel electrode, 2 is a protective film, 3 is a data wiring (signal wiring), 4 is a glass substrate, 5 is a gate insulating film, and a switching element is not shown.

For example, short-circuit portions A and B shown in FIG.
Is present as a defect in the lighting inspection. Among these defects, the short-circuit portion A can be corrected by laser trimming, and the short-circuit portion B can be corrected by cutting both sides of the short-circuit portion and connecting to the redundant wiring.

However, when a defect is detected in a state of a liquid crystal panel in which an active matrix substrate and a counter substrate are bonded and liquid crystal is injected between the two substrates, the detected defect is severe and the severe defect is detected. If the liquid crystal panel cannot be corrected, the liquid crystal panel must be discarded. As described above, the semi-finished product with added value has to be discarded, which causes a problem that the production yield is reduced.

Therefore, in recent years, it has been demanded that a serious defect is detected in the state of the active matrix substrate before being bonded to the counter substrate, and that a defect such as a leak defect can be corrected in a previous step. Also, such a defect can be detected by performing image processing, resistance test, and the like in the state of the active matrix substrate. Along with this, a process system has been created which corrects defects in the state of the substrate and prevents defective products from flowing in subsequent processes.

[0011]

In recent years, in order to increase the aperture ratio of a liquid crystal panel, a liquid crystal display device having an active matrix substrate having a structure as shown in FIG. 7 has been developed.

In this active matrix substrate, an interlayer insulating film 6 is provided on a glass substrate 4 so as to cover scanning wires and data wires (signal wires) 3 (not shown), switching elements (not shown), and the like. A pixel electrode 1 is provided.

According to this configuration, the scanning wiring and the signal wiring 3
And the pixel electrode 1 can be partially overlapped with the interlayer insulating film 6 interposed therebetween, so that the liquid crystal is compared with the active matrix substrate in which the signal wiring 3 and the pixel electrode 1 are provided in the same layer as shown in FIG. It is possible to increase the aperture ratio of the panel.

However, in the case of the configuration shown in FIG. 7, if the same correction method as in the related art is used, the following problem occurs.

That is, as shown in FIG. 8, when a laser beam is irradiated from the back surface of the substrate, the interlayer insulating film 6 and the pixel electrode 1 existing above the short-circuit portion 8 to be trimmed are simultaneously affected by the pressure such as expansion of the lower film. Since it is removed, the removing unit 7
However, there is a problem that a liquid crystal alignment defect occurs and a leak with the counter electrode occurs. Further, even if the short-circuit portion can be removed, the laser irradiation mark becomes tapered due to the influence of the interlayer insulating film 6, the trimming accuracy is poor, and the laser irradiable region becomes very narrow, so that a desired region is removed. There was also a problem that it was difficult. In FIG. 8, reference numeral 7 denotes a portion removed by laser irradiation.

Therefore, Japanese Patent Application No. 10-81831 discloses that
A method of correcting a defect before forming an interlayer insulating film has been proposed.

However, this method is a method of performing correction before forming an interlayer insulating film, and does not describe correction of a defect detected by a final inspection after completion of an active matrix substrate (TFT substrate). . The number of processes is large until the active matrix substrate is completed, and it is essential to reduce defects in the final inspection. Therefore, from the viewpoint of creating a process system that does not allow defective products to flow to the subsequent processes, it is necessary to perform highly reliable correction even after the interlayer insulating film is formed.

SUMMARY OF THE INVENTION The present invention has been made to solve such problems of the prior art, and is an active matrix that can reliably correct a defect after completion of an active matrix substrate and before bonding to an opposing substrate. An object of the present invention is to provide a method for repairing a defect in a matrix substrate, a method for manufacturing a liquid crystal panel, and a device for repairing a defect in an active matrix substrate.

[0019]

According to the present invention, there is provided a method for repairing a defect in an active matrix substrate, wherein a plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film. A method for correcting a short circuit defect of an active matrix substrate in which a switching element is provided and a pixel electrode is provided on an interlayer insulating film provided so as to cover the scanning wiring, the signal wiring and the switching element. Irradiating the interlayer insulating film with a laser beam of an arbitrary wavelength to remove a portion of the interlayer insulating film on the repair portion;
Irradiating a laser beam of an arbitrary wavelength to a defective portion or a wiring portion under the removed portion of the interlayer insulating film to remove the defective portion or cut the wiring portion, thereby achieving the above object. Is achieved.

In the step of removing the interlayer insulating film,
The laser light may be irradiated in an irradiation area wider than the step of removing the defective portion or cutting the wiring portion.

The method may include a step of connecting the wiring portions on both sides of the cut portion, or connecting the wiring portions on both sides to the redundant wiring.

According to the method of repairing a defect of an active matrix substrate of the present invention, a plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film, and a switching element is provided near an intersection of both wirings. , The scanning wiring,
A method for correcting a disconnection defect of an active matrix substrate in which a pixel electrode is provided on an interlayer insulating film provided so as to cover the signal wiring and the switching element,
Irradiating the interlayer insulating film with a laser beam of an arbitrary wavelength to remove the interlayer insulating film portion on the repaired portion, connecting the wiring portions on both sides of the defective portion, or connecting the wiring portions on both sides to redundant wiring; Connecting, whereby the above object is achieved.

The method may include a step of forming an insulating film made of the same material as the interlayer insulating film so as to cover the removed portion by the laser beam irradiation.

In the step of removing the interlayer insulating film,
Laser light having a wavelength of 150 nm or more and 300 nm or less may be used.

In the step of removing the interlayer insulating film,
The fourth harmonic of a YAG laser may be used.

In the step of removing the defective portion or cutting the wiring portion, the wavelength is 300 nm or more and 1500 nm or more.
The following laser light may be used.

In the step of connecting the wiring portions on both sides of the cut portion or the defective portion, or connecting the wiring portions on both sides to the redundant wiring, a conductive paste is applied to the connection portions and Y
The fundamental wave of the AG laser may be applied.

In the method for manufacturing a liquid crystal panel according to the present invention, an active matrix substrate having a defect corrected by the defect correcting method for an active matrix substrate according to the present invention is bonded to a counter substrate, and liquid crystal is injected between the two substrates. Therefore, the above object is achieved.

According to the defect correcting apparatus for an active matrix substrate of the present invention, a plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film, and a switching element is provided near an intersection of the two wirings. , The scanning wiring,
A defect repair apparatus used to repair a defect of an active matrix substrate provided with a pixel electrode on an interlayer insulating film provided so as to cover the signal wiring and the switching element, wherein the repair substrate is mounted. An XY stage, a laser irradiation unit disposed above the stage and capable of selecting an irradiation wavelength, a control unit for controlling an irradiation area of laser light oscillated from the laser irradiation unit, and a laser passing through the control unit At least a light condensing unit for enlarging or reducing light is provided, thereby achieving the above object.

[0030] The laser irradiation section may include a YAG laser and a wavelength conversion element.

Hereinafter, the operation of the present invention will be described.

According to the present invention, when a defect occurs in an active matrix substrate having a pixel electrode on an interlayer insulating film covering a scanning line, a signal line, and a switching element, the defect occurs before bonding to an opposing substrate. Make corrections. Therefore, the manufacturing yield of the display device does not decrease, and no defective liquid crystal alignment occurs due to the debris removed by the laser, and the peripheral film is not damaged. Furthermore, defects after the interlayer insulating film is formed can be corrected, and a highly reliable repair system can be constructed.

For example, when a short-circuit defect exists,
First, the interlayer insulating film is irradiated with laser light of an arbitrary wavelength to remove a portion of the interlayer insulating film on the repaired portion. Thereafter, the defective portion is irradiated with a laser beam of an arbitrary wavelength to remove the defective portion, or a wiring portion under the removed portion of the interlayer insulating film, such as a scanning wiring, a signal wiring, or drawing out from a TFT drain to a pixel electrode. A defect is corrected by irradiating a wiring or the like with laser light of an arbitrary wavelength to cut the wiring part. In this case, the wiring portions on both sides of the cut portion may be further connected, or the wiring portions on both sides may be connected to the redundant wiring.

Alternatively, if there is a disconnection defect,
The interlayer insulating film is irradiated with laser light of an arbitrary wavelength to remove a portion of the interlayer insulating film on the repaired portion. After that, the wiring portions on both sides of the defective portion are connected, or the wiring portions on both sides are connected to the redundant wiring.

Further, in the step of removing the interlayer insulating film, a laser beam may be irradiated in a wider irradiation area than in the step of removing the defective portion or cutting the wiring portion.

As described above, the removal of the interlayer insulating film and the repair of the defective portion can be performed efficiently because the laser irradiation can be performed at the wavelength and the irradiation region suitable for each. Further, since the correction is performed in a state where the interlayer insulating film on the correction portion is removed, a desired region can be corrected with high accuracy by expanding the laser irradiation region in the correction portion.

Further, if an insulating film made of the same material as the interlayer insulating film is formed so as to cover the removed portion by the laser beam irradiation,
Since the repaired portion is protected and the unevenness of the substrate can be reduced, poor liquid crystal alignment and leakage do not occur at that portion. Alternatively, the interlayer insulating film may not be formed as it is.

In the step of removing the interlayer insulating film, it is preferable to use laser light having a wavelength of 150 nm or more and 300 nm or less. For example, the fourth harmonic of a YAG laser can be used.

In the step of removing a defective portion or cutting a wiring portion, it is preferable to use laser light having a wavelength of 300 nm or more and 1500 nm or less, for example, using a second harmonic or a third harmonic of a YAG laser. Can be.

In the step of connecting the wiring portions on both sides of the cut portion or the defective portion, or connecting the wiring portions on both sides to the redundant wiring, for example, a conductive paste is applied to the connection portion and YAG is applied.
The paste can be cured or welded by irradiating a fundamental wave of a laser.

The defect repairing apparatus for an active matrix substrate according to the present invention includes an XY stage, a laser irradiator, a controller such as a motorized slit, and a condenser such as a condenser lens. The desired irradiation wavelength and wavelength region can be selected by the laser irradiation section, the interlayer insulating film can be removed, and further, the short-circuit section can be removed, the wiring section can be cut, and the redundant wiring can be connected.

For example, if a YAG laser and a wavelength conversion element are used, a fundamental wave, a second harmonic, a third harmonic, a fourth harmonic, and the like can be irradiated. In this case, it is possible to cure and weld the conductive paste by the fundamental wave, to connect the wiring, to remove the short-circuit portion and to cut the wiring by the second and third harmonics, and to remove the interlayer insulating film by the fourth harmonic. is there. Note that the conductive paste can be cured by another process such as a firing process.

[0043]

Embodiments of the present invention will be described below with reference to the drawings. Note that, in the following drawings, portions having the same functions as those of the related art are denoted by the same reference numerals and described.

In this embodiment, a method for correcting a short-circuit defect after completion of an active matrix substrate and before bonding to an opposing substrate will be described.

FIG. 1 is a sectional view of the active matrix substrate according to the present embodiment. In the active matrix substrate, an interlayer insulating film 6 is provided on a glass substrate 4 so as to cover scanning wiring, signal wiring, switching elements, and the like (not shown), and the pixel electrode 1 is provided on the interlayer insulating film 6. As described above, by partially overlapping the scanning wiring and the signal wiring with the pixel electrode 1 via the interlayer insulating film 6, the aperture ratio of the liquid crystal panel can be increased. The pixel electrode 1 is made of ITO (Indium Tin O 2) having a thickness of 100 nm.
xide) or a metal film such as Al, and the interlayer insulating film 6 is made of an acrylic resin having a thickness of about 1 μm to 3 μm.

For this active matrix substrate,
The correction is performed by directly trimming the short-circuited portion 8 as described below.

First, as shown in FIG. 2, a laser irradiation region is set larger than a desired excision region, and a laser beam of an arbitrary wavelength, for example, a fourth harmonic of a YAG laser is irradiated to the interlayer insulating film 6 a plurality of times. Thereby, the pixel electrode 1 and the interlayer insulating film 6 are removed. 7a in this figure is a portion removed by laser irradiation. At this time, it is necessary to sufficiently consider the removal area of the pixel electrode 1 so that the capacitance of Clc does not affect the writing potential of the pixel. The irradiation is terminated after the removal to the vicinity of the lower film surface.

Next, the laser beam of an arbitrary wavelength, for example, the second harmonic or the third harmonic is switched to the laser beam of an arbitrary wavelength, for example, the second harmonic or the third harmonic, to the desired excision area, and the laser irradiation position and irradiation are performed. Laser trimming is performed by setting an area. FIG. 3 shows the cross section after the correction. This is the portion where 7b in this figure is removed.

As described above, by changing the irradiation area of the lower layer and the upper layer by combining the fourth harmonic for directly removing the interlayer insulating film and the laser of another wavelength for irradiating the lower layer, all the fourth harmonics alone are used. This is because burrs and the like of the upper layer film can be made less likely to occur even if the number of irradiations is reduced as compared with the case where the film is removed.

In the present embodiment, a YAG laser is used as the laser, and the energy density is about 20 to 25.
Irradiation was performed with mJ / cm ² and a pulse width of about 8 ns to 10 ns.

Thereafter, the substrate is washed and re-inspected in the final inspection of the active matrix substrate (TFT substrate), and the repair state is confirmed. If there is no problem, the substrate is sent to the liquid crystal process. The liquid crystal display device is completed by bonding the active matrix substrate with the defect corrected in this way and the counter substrate and injecting liquid crystal into the gap between the two substrates.

Here, when the short-circuited portion shown in FIG. 1 is trimmed from the back surface of the liquid crystal panel by a laser as in the conventional case, as shown in FIG. Since it is destroyed, the fragments are scattered to the surroundings to generate new defects, peripheral film defects, and burrs on the electrodes. Further, it is impossible to perform cleaning at the liquid crystal panel stage.

When the scanning wiring and the signal wiring are short-circuited in the active matrix substrate, the above-mentioned interlayer insulating film is irradiated with laser light of an arbitrary wavelength to partially remove the interlayer insulating film. After changing the wavelength and irradiation area, the signal wiring or scanning wiring on both sides of the defective part is cut by laser irradiation to eliminate the influence on the driving of other pixels, and then the correction is completed using redundant wiring (not shown) I do. For example, when the signal wiring or the scanning wiring is duplicated as a redundant structure, the correction is completed at the time of cutting. Alternatively, even in the case of a single line, by connecting with a redundant wiring and a laser so that a signal equivalent to the signal input side can be input to the opposite side to the signal input side, a signal can be input from both of the disconnected wiring, The modification is completed. Further, both ends of the wiring cut by the conductive paste can be connected.

After this correction, a cleaning process is performed using a substrate cleaning apparatus, and an active matrix substrate (TFT substrate)
After the reinspection in the final inspection, the state of correction is checked, and if there is no problem, it is sent to the liquid crystal injection step. The liquid crystal display device is completed by bonding the active matrix substrate with the defect corrected in this way and the counter substrate and injecting liquid crystal into the gap between the two substrates.

Further, when the signal wiring and the drain lead portion are short-circuited, after the interlayer insulating film is irradiated with laser light of an arbitrary wavelength to partially remove the interlayer insulating film as described above, By changing the wavelength and the irradiation area, the short-circuit portion is cut by laser irradiation as described above, the short-circuit between the signal wiring and the drain is released, and the pixel can be corrected to a normal pixel.

Further, in the case where a disconnection has occurred in the scanning wiring or the signal wiring, the interlayer insulating film is irradiated with a laser beam of an arbitrary wavelength to partially remove the interlayer insulating film. The wiring portions on both sides of the unit can be connected, or the wiring portions on both sides can be connected to the redundant wiring.

Next, a description will be given of a defect repairing apparatus for an active matrix substrate used in this embodiment.

FIG. 4 is a view showing a schematic configuration of the defect repair apparatus, wherein 11 is a YAG laser oscillator, 12 is a wavelength conversion element, 13 is an energy attenuation filter, 14 is a half mirror, and 15 and 16 are laser beam irradiation. A light source and a CCD camera for projecting a spot, 17 is an electric slit for controlling an irradiation area of the laser light, 18 is a power detector for detecting the intensity of the irradiated laser light, and 19 is an enlargement of the irradiated laser light. Alternatively, it is a condenser lens for reduction.
Reference numeral 22 denotes an XY stage on which a substrate to be repaired is mounted, 23 is an interface, 24 is a control unit, 25 is an external controller, 26 is a monitor, 20 is a substrate to be repaired, and 21 is a substrate to be repaired. It is a backlight. Further, a resistance measurement probe is attached to the XY stage 22.

In this defect repairing apparatus, the YAG laser oscillator 11 outputs the fundamental wavelength 106 of the YAG laser.
The laser light of 0 nm is oscillated, and the second harmonic (532 nm) and the third harmonic (355n) are transmitted through the wavelength conversion element 12.
m) and the fourth harmonic (266 nm). The converted laser light is supplied to the energy attenuating filter 13.
Adjusts its intensity. For example, laser light of a fundamental wave (infrared wave) is oscillated for connection of wiring, and laser light of second harmonic and third harmonic is oscillated for cutting of wiring and removal of a defective portion. Is removed by oscillating the fourth harmonic laser light.

This YAG laser oscillator 11, wavelength conversion element 12, energy attenuation filter 13, light source 15, CC
D camera 16, electric slit 17, power detector 18,
The condenser lens 19 and the XY stage 22 are connected via an interface 23 to a control unit 24 having a CPU, a ROM, and a RAM. These operate in response to an instruction from the external controller 25, and can irradiate the substrate to be corrected with laser light at a predetermined wavelength and irradiation area. Further, the state of the laser irradiation spot captured by the CCD camera 16 is displayed on a monitor 26.

A method for repairing a short-circuit defect in an active matrix as shown in FIG. 1 using this defect repair apparatus will be described below.

First, an active matrix substrate in which a defect has been detected by image processing, resistance inspection, or the like is set in the defect repairing apparatus by a transport unit. At this time, if the defect position (coordinate) is known from the inspection measurement data,
By controlling the XY stage 22, the laser irradiation area is roughly adjusted to the defect position.

Next, the XY stage 22 and the electric slit 1 are controlled by the external controller 25 while watching the monitor 26.
7. Control the condenser lens 19 to finely adjust the laser irradiation area.

After the laser irradiation position is determined, the laser irradiation area is set to be larger than the desired excision area, and the interlayer insulating film 6 is irradiated with laser light of an arbitrary wavelength, for example, the fourth harmonic of a YAG laser a plurality of times. As a result, the pixel electrode 1 and the interlayer insulating film 6 are removed. The irradiation is terminated after the removal to the vicinity of the lower film surface.

Next, a laser beam of an arbitrary wavelength, for example, a second harmonic or a third harmonic is switched to a laser beam of an arbitrary wavelength, for example, a second harmonic or a third harmonic, on the defect portion or the lower layer film of the removed portion of the interlayer insulating film, and a desired laser beam is irradiated to a desired cut region. Laser trimming is performed by setting an area.

After this correction, the substrate is subjected to the next cleaning step and the active matrix substrate (TFT substrate) using the transfer device.
Transport to completed inspection process.

[0067]

As described above in detail, in the case of the present invention, the short-circuit defect detected in the final inspection after the completion of the active matrix substrate is corrected by irradiating the interlayer insulating film with laser light of an arbitrary wavelength. After the film is partially removed, the short-circuit portion can be removed, or the underlying wiring film can be cut to correct the film. Alternatively, the disconnection defect is corrected by irradiating a laser of an arbitrary wavelength to the interlayer insulating film and partially removing the interlayer insulating film, and then connecting the wiring on both sides of the disconnected portion or connecting to the redundant wiring. can do. Therefore, as compared with the conventional repair method in which the repair is performed in the state of the liquid crystal display panel, the damage of the pattern is minimized, the defect is not generated, and the reliability of the repair can be increased. Further, since the correction is performed in the state of the substrate, cleaning after the correction becomes possible, and no foreign matter remains in the liquid crystal layer. In addition, the modification reduces the unevenness of the pixel electrode forming portion,
Poor alignment can be prevented.

Furthermore, since the repair can be performed after the completion of the active matrix substrate, the repair failure is not passed to the subsequent process as compared with the conventional repair method in which the repair is performed before the formation of the interlayer insulating film. Thus, the production loss can be minimized, and the production yield can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of an active matrix substrate according to the present invention.

FIG. 2 is a cross-sectional view for explaining a defect repair method for an active matrix substrate according to one embodiment of the present invention.

FIG. 3 is a cross-sectional view for explaining a defect repair method for an active matrix substrate according to an embodiment of the present invention.

FIG. 4 is a diagram showing a configuration of an active matrix substrate defect repair apparatus according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a configuration of a conventional active matrix substrate.

FIG. 6 is a plan view for explaining a conventional defect repair method for an active matrix substrate.

FIG. 7 is a cross-sectional view showing a configuration of an active matrix substrate provided with a pixel electrode on an interlayer insulating film.

FIG. 8 is a cross-sectional view for explaining a conventional defect correction method for an active matrix substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Pixel electrode 2 Protective film 3 Data wiring (signal wiring) 4 Glass substrate 5 Gate insulating film 6 Interlayer insulating film 7a, 7b Removal part by laser 8 Short circuit part 11 YAG laser oscillator 12 Wavelength conversion element 13 Energy attenuation filter 14 Half mirror 15 Light source 16 CCD camera 17 Motorized slit 18 Power detector 19 Condensing lens 20 Substrate to be corrected 21 Backlight 22 XY stage 23 Interface 24 Control unit 25 External controller 26 Monitor

Claims (12)

[Claims] A plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film; a switching element is provided near an intersection of the two wirings; A method for correcting a short-circuit defect of an active matrix substrate in which a pixel electrode is provided on an interlayer insulating film provided so as to cover a switching element, the method comprising irradiating the interlayer insulating film with a laser beam of an arbitrary wavelength. Removing the interlayer insulating film portion on the portion, and irradiating the defective portion or the wiring portion under the removed portion of the interlayer insulating film with laser light of an arbitrary wavelength to remove the defective portion or the wiring portion Cutting the active matrix substrate. 2. The active matrix substrate according to claim 1, wherein in the step of removing the interlayer insulating film, a laser beam is irradiated in a wider irradiation area than in a step of removing the defective portion or cutting the wiring portion. Defect correction method. 3. The method according to claim 1, further comprising the step of connecting the wiring portions on both sides of the cut portion or connecting the wiring portions on both sides to the redundant wiring. 4. A plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film, and a switching element is provided near an intersection of the two wirings. A method for repairing a disconnection defect of an active matrix substrate in which a pixel electrode is provided on an interlayer insulating film provided so as to cover a switching element, wherein the interlayer insulating film is repaired by irradiating a laser beam of an arbitrary wavelength. A method for repairing a defect in an active matrix substrate, comprising: a step of removing an interlayer insulating film part on a part; and a step of connecting wiring parts on both sides of the defective part or connecting wiring parts on both sides to a redundant wiring. 5. The method for repairing defects in an active matrix substrate according to claim 1, further comprising the step of forming an insulating film made of the same material as the interlayer insulating film so as to cover a portion removed by laser light irradiation. . 6. The method according to claim 1, wherein in the step of removing the interlayer insulating film, a laser beam having a wavelength of 150 nm or more and 300 nm or less is used. 7. The method according to claim 6, wherein in the step of removing the interlayer insulating film, a fourth harmonic of a YAG laser is used. 8. In the step of removing the defective portion or cutting the wiring portion, a wavelength of 300 nm or more and 1500 nm is used.
8. The method for repairing defects in an active matrix substrate according to claim 1, wherein a laser beam of m or less is used. 9. A step of connecting a wiring portion on both sides of a cut portion or a defective portion or connecting a wiring portion on both sides to a redundant wiring, applying a conductive paste to the connection portion and applying a fundamental wave of a YAG laser. 9. The method according to claim 2, wherein the irradiation is performed.
The method for repairing defects of an active matrix substrate according to any one of the above. 10. An active matrix substrate having a defect corrected by the method of claim 1 and a counter substrate are bonded to each other, and a liquid crystal is injected between the two substrates. Liquid crystal panel manufacturing method. 11. A plurality of scanning wirings and a plurality of signal wirings are provided so as to intersect with each other via an insulating film, a switching element is provided near an intersection of the two wirings, and the scanning wirings, the signal wirings and the signal wirings are provided. What is claimed is: 1. A defect repairing apparatus used for repairing a defect of an active matrix substrate in which a pixel electrode is provided on an interlayer insulating film provided so as to cover a switching element, comprising: an XY stage on which a repairing substrate is mounted; A laser irradiator disposed above the stage and capable of selecting an irradiation wavelength, a controller for controlling an irradiation area of laser light oscillated from the laser irradiator, and enlarging or reducing the laser light passing through the controller And a light-collecting unit for performing the defect correction. 12. The defect repairing apparatus for an active matrix substrate according to claim 11, wherein said laser irradiation section includes a YAG laser and a wavelength conversion element.