JP2000214475A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a reflection type high-quality liquid crystal display device having a bright screen and a low electric power consumption in a high yield and in a reduced production period. SOLUTION: The liquid crystal display device 1 is formed by injecting a liquid crystal between a reflection type pixel substrate 2 and a counter substrate 3. The reflection pixel substrate 2 is equipped with plural scanning lines 5 almost parallel to each other, plural reference signal lines 6 crossing the scanning lines and arranged almost parallel to each other, common wirings 7 to connect plural reference signal lines 6, reflection electrodes arranged in a matrix, and TFTs formed on each reflection electrode 8. On the counter substrate 3, plural display signal lines 11 which also act as counter electrodes are formed parallel to each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device having a switching element such as a thin film transistor.
More specifically, the present invention relates to a reflective liquid crystal display device that does not use a backlight and performs display by reflecting incident light, or a reflective liquid crystal display device that can be switched to be used in combination with a transmissive liquid crystal display device that uses a backlight. Things.

[0002]

2. Description of the Related Art A liquid crystal display device comprising a liquid crystal display element using a nematic liquid crystal or the like has been widely used for a long time as a numerical segment type liquid crystal display device such as a timepiece and a calculator. Recently, such a liquid crystal display device has been widely used as various displays including a word processor, a computer, and a navigation system by utilizing features such as thinness, light weight, and low power consumption, and its market has been expanding. In particular, using active elements such as TFTs as switching elements and arranging pixels in a matrix,
Active matrix type liquid crystal display devices are often used because of their high display quality.

A liquid crystal display device as described above is a CRT (Ca
Thode Ray Tube) has the advantages of being much thinner (depth), lower power consumption, and being easier to be full-colored. Applications and demands in wider fields, such as camera displays, are expanding.

However, the conventional liquid crystal display device has a narrow viewing angle as compared with a CRT, and the manufacturing cost is as high as three to fifteen times. In order to replace many CRT products with liquid crystal display devices or to create liquid crystal display devices for new portable electronic devices, many companies and research institutes such as universities have proposed various types of liquid crystal displays. Competing for display device development.

[0005] Among the above liquid crystal display devices, in particular,
A reflective liquid crystal display device that performs display by reflecting light incident from the outside does not require a backlight that is a light source. Therefore, since a light guide and a power supply circuit component related to the backlight are not required, the material cost and the total number of manufacturing steps can be reduced. As a result, a reflection-type liquid crystal display device has attracted attention as a liquid crystal display device that can be made thinner and lighter and can further reduce power consumption, and is being developed and put into practical use in competition. .

Conventionally proposed or developed active matrix reflective liquid crystal display devices are disclosed in, for example, JP-A-5-323371 and JP-A-6-11.
Many other proposals have been made, such as Japanese Patent Application Laid-Open No. 711 or Japanese Patent Application Laid-Open No. 10-111509. In the active matrix type reflection type liquid crystal display device described above, usually, in order to prevent the display from being double-recognized by parallax, the reflection plate is not externally provided, but is formed inside the substrates constituting the liquid crystal display device. You. In particular, JP-A-5-323371 discloses a reflective liquid crystal display device in which a reflective electrode serving as a reflector is disposed on a surface of a substrate on a liquid crystal layer side, and which performs a bright display with a wide field of view without parallax. It has been disclosed.

The reflection plate of the reflection type liquid crystal display device described in each of the above publications is formed by a complicated process for the purpose of improving the characteristics of reflected light. Hereinafter, the structure and manufacturing method of the reflection plate will be described in detail with reference to the structure of the reflection type liquid crystal display device disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 5-323371.

FIG. 8 is a plan view of a reflection type pixel substrate 101 provided with a reflection electrode 113 having a function as a reflection plate among a pair of substrates constituting a reflection type liquid crystal display device. 9 is a cross-sectional view of the reflection type liquid crystal display device.

As shown in FIG. 8, a plurality of scanning lines 111 made of metal such as tantalum are provided on a reflective pixel substrate 101 constituting a reflective liquid crystal display device in parallel with each other. The gate electrode 114 branches from the line 111 for each pixel. A display signal line 112 intersects the scanning line 111 via a gate insulating film described later. The display signal line 112 is connected to the source electrode 1
15. The source electrode 115 is formed of the same metal as the display signal line 112.

The reflection electrode 113 having both a function as a pixel electrode and a function as a reflection plate is formed in a region surrounded by the scanning line 111 and the display signal line 112, and is arranged in a matrix. ing. The reflection electrode 113 is made of aluminum and has a contact hole 1.
17 is connected to the drain electrode 116.

The gate electrode 114 and the source electrode 1
The thin film transistor (hereinafter, referred to as TFT) 120 includes the drain electrode 116, the gate insulating film, the semiconductor layer 118 described later, and the like. The TFT 120 is a switching element for selectively driving the reflection electrode 113.

Next, the reflection type liquid crystal display device will be described more specifically with reference to FIG.

In the reflective pixel substrate 101, the insulating substrate 1
A gate electrode 114 is formed on 31, and a gate insulating film 132 made of silicon nitride (SiNx) or the like is formed on almost the entire surface of the insulating substrate 131 so as to cover the gate electrode 114.

Further, a semiconductor layer 118 is formed on the gate insulating film 132 above the gate electrode 114. Contact layers 1 are provided at both ends of the semiconductor layer 118.
33a and 133b are formed respectively. On one contact layer 133a, a source electrode 115 is formed so as to overlap, and on the other contact layer 133b, a source electrode 1
A drain electrode 116 made of the same material as that of No. 15 is formed so as to overlap. As described above, the TFT 120 is formed.

Further, an organic insulating film 134 is formed on the entire surface of the insulating substrate 131 so as to cover the scanning lines 111, the display signal lines 112, and the TFTs 120. In the organic insulating film 134, the region where the reflective electrode 113 is formed has a tapered shape and a cross-sectional shape of the bottom portion having a diameter of 3.
A convex portion 134a having a height of H and having a circular shape of ５０50 μm (more preferably 5-20 μm) is formed at a distance of 1 μm or more from the adjacent convex portion 134a. The projection 134
The height H of a is determined by the method of forming the organic insulating film 134, the problem in the process of forming the contact hole 117 in the organic insulating film 134, and the uniformity of the cell thickness when a liquid crystal display device is manufactured. It is 5 μm or less.

Further, a contact hole 117 is formed in the organic insulating film 134 above the drain electrode 116. The contact hole 117 is formed in the organic insulating film 13.
The reflection electrode 113 formed on the region of the protrusion 134a of No. 4
And the drain electrode 116. On the reflective electrode 113, an alignment film 135 is formed.

As described above, by forming the surface of the reflective electrode 113 into a complicated shape (a shape having a circular convex portion), the characteristics of the reflected light are improved, and the reflective type which performs brighter display with a wide viewing angle is provided. A liquid crystal display device can be realized.

The opposite substrate 102, which is the other substrate,
The color filter 142 is formed on the insulating substrate 141. In the color filter 142, a portion of the reflective pixel substrate 101 facing the reflective electrode 113 is a magenta or green filter 142a.
The portion not opposed to 3 is the black filter 142b. Further, the entire surface of the color filter 142 is
Transparent electrode 14 made of TO (Indium Tin Oxide) or the like
3. Further, on the transparent electrode 143, an alignment film 144 is formed.

Both the reflective pixel substrate 101 and the opposing substrate 102 are bonded to face each other such that the reflective electrode 113 and the magenta or green filter 142a coincide with each other. A liquid crystal 103 is injected between the two substrates 101 and 102 to complete a reflection type liquid crystal display device.

FIG. 10 shows the structure provided with the reflective electrode 113.
4 is a flowchart of forming a reflective pixel substrate 101 on an insulating substrate 131. FIG. 11 is a cross-sectional view for explaining the formation method shown in FIG. 10, and FIG.
4, (b) shows step s7 in FIG. 10, (c) shows step s8 in FIG. 10, and (d) shows step s9 in FIG.

In step s1, a metal layer such as tantalum is formed on the insulating substrate 131 by a sputtering method or the like, and thereafter, patterning is performed by a photolithographic method and etching to form a scanning line 111 and a gate electrode 114.

In step s2, a gate insulating film 132 made of silicon nitride or the like is formed by a plasma CVD method.

In step s3, an a-Si layer having a thickness of 1000 ° to be the semiconductor layer 118 and the contact layers 133a, 133a
An n + a-Si layer having a thickness of 400 ° and a thickness of 33b is continuously formed in this order. Thereafter, patterning is performed to form the semiconductor layer 118 and the contact layers 133a and 133b.

In step s4, a metal such as molybdenum is formed on the entire surface of the insulating substrate 131 by sputtering.
By patterning the molybdenum metal layer, the source electrode 115, the drain electrode 116 and the display signal line 11 are formed.
2 are formed, and the TFT 120 is completed.

FIG. 11A shows the reflective pixel substrate 101 on which the processing up to step s4 has been completed and the TFT 120 has been completed.
Is shown in cross section.

In step s5, a polyimide resin or the like is coated on substantially the entire surface of the insulating substrate 131 on which the TFT 120 is formed.
For example, spin coating at 1200 rpm for 20 seconds,
The organic insulating film 134 is formed to a thickness of μm.

In step s6, a contact hole 117 is formed in the organic insulating film 134 by using photolithography and dry etching.

In step s7, a photoresist 150 is applied on the organic insulating film 134, and a mask 15 having a circular light-shielding region 151a formed irregularly as shown in FIG.
1 is used to pattern a circular convex portion 150a on the photoresist 150 in a region where the reflective electrode 113 is formed in a later step. Further, heat treatment is performed within a temperature range of 120 ° C. to 250 ° C. (for example, at 200 ° C. for 30 minutes) in order to form a corner of the circular convex 150a.

FIG. 11B is a sectional view of the reflective pixel substrate 101 after the processing up to step s7.

In step s8, the portion of the organic insulating film 134 where there is no photoresist 150 is etched to form a circular projection 134a having a height H of 1.0 μm. In the step s7 described above, the circular projection 150 of the photoresist 150 is formed.
Since the corner of a is rounded, the circular convex portion 134a of the organic insulating film 134 also has a rounded shape. Also, the contact hole 117 and the organic insulating film 134 on the TFT 120 are formed.
Are protected by the photoresist 150 and are not etched. After the etching is completed, the photoresist 150 is removed by chemical cleaning or the like.

FIG. 11C is a sectional view of the reflective pixel substrate 101 after the processing up to step s8.

In step s9, an aluminum layer is formed on the entire surface of the organic insulating film 134, and the reflective electrode 113 is formed on the circular convex portion 134a. Thus, the reflective pixel substrate 101 is completed. The reflective electrode 113 is connected to the drain electrode 116 of the TFT 120 via a contact hole 117 formed in the organic insulating film 134.

FIG. 11D is a sectional view of the reflective pixel substrate 101 after the processing up to step s9.

As described above, the reflective electrode 113 is formed by the steps s1 to s9. In the above-described manufacturing process, the height H of the circular convex portion 134a may be set to 1 μm by extending the dry etching time of the organic insulating film 134. Further, the shape of the convex portion 134a of the organic insulating film 134 is the shape of the mask 151, the thickness of the photoresist 150,
Controlled by the dry etching time, an organic insulating film made of another material may be applied.

On the other hand, the transparent electrode 143 formed on the opposing substrate 102 is made of ITO or the like having a thickness of 1000 °. The alignment films 135 and 144 are formed by applying polyimide or the like and then sintering, so that the reflective pixel substrate 101 and the opposing substrate 10 are coated.
2 respectively.

The liquid crystal 10 is screen-printed between the reflective pixel substrate 101 and the counter substrate 102 with an adhesive sealant (not shown) mixed with a spacer.
3 is formed. Liquid crystal 103 is injected by evacuating the space.

The type and thickness of the polyimide resin used for forming the organic insulating film 134, or selected values such as the heat treatment temperature of the resist, or the reflective electrode 1 to be coated.
By changing the type and film thickness of the reflective electrode 11,
The reflection angle is controlled by freely controlling the inclination angle of the three concavities and convexities.

The size of the specular reflection component is controlled by changing the ratio of the light-shielding region 151a of the mask 151.

[0039]

However, in the above-mentioned conventional liquid crystal display device, the gate insulating film 132 is
When a light transmitting insulating film such as silicon nitride (SiNx) or silicon dioxide (SiO ₂ ) is formed by a CVD method or a sputtering method, a substrate serving as a base (the insulating substrate 13) is formed.
1) and metal film (scanning line 111, gate electrode 114, etc.)
Irregularities on the surface such as are reflected in the gate insulating film 132 and the upper layer almost in the same manner.

Further, the display signal line 112 provided on the same substrate as the scanning line 111 is disposed on the gate insulating film 132 so as to be orthogonal to the scanning line 111, and the scanning signal line 112 and the display signal The line 112 passes near the periphery of the reflective electrodes 113 arranged in a matrix.

Therefore, at many intersections between the scanning lines 111 and the display signal lines 112, the gate insulating film 132 and the display signal lines 112 are formed on the scanning lines 111 so that the steps of the scanning lines 111 are different. Reflected and stacked in this order.

With the above configuration, the following problems (1) to (4) occur.

At the intersections of the scanning lines 111 and the display signal lines 112, and at the gate electrode portion where the gate electrode 114 is formed, a step or the like in the lower layer is reflected on the gate insulating film 132 in the upper layer, and cracks occur. Is easy to enter.
Therefore, the display signal line 11 in the upper layer of the gate insulating film 132 is formed.
2 easily breaks during manufacturing. Alternatively, the gate insulating film 1
Due to the 32 pinholes, the display signal line 112 in the upper layer and the scanning line 111 in the lower layer are short-circuited, and the yield is reduced. Although this is considerably reduced by forming the gate insulating film 132 in a two-layer structure, the defect rate is still not zero, and the defect rate is several percent or more. Currently, in the mid-size and larger reflective liquid crystal display devices that are being developed for practical use, the number of wirings increases and the wiring widths become narrower.
A large number of wiring defects may occur. Therefore, in a large-sized or high-definition liquid crystal display device to be developed in the future, the defect rate may be further increased.

At the intersections between the scanning lines 111 and the display signal lines 112 and at the gate electrode portions, new cracks occur over time due to the residual stress of the film formation, or the cracks generated during the film formation spread. Cheap. Therefore, there is a possibility that defects such as a short circuit due to static electricity may occur after commercialization, and the reliability is reduced.

As the size and resolution of the liquid crystal display device increase, the lengths of the scanning lines 111 and the display signal lines 112 become longer and the widths of these wirings become narrower. Increase. Furthermore, since the number of these wirings increases, the number of intersections with respect to one wiring increases, and the load capacity at the intersections increases, which causes problems such as signal delay.

The above are common problems of the transmission type liquid crystal display device and the reflection type liquid crystal display device. Further, as the problems of the reflection type liquid crystal display device, there are the following problems (1) to (4).

Originally, there is a possibility that the reflection type liquid crystal display device can reduce the cost more than the transmission type liquid crystal display device. However, in reality, the complicated reflector (reflection electrode 1) as described above is used.
13) Due to the increase in material costs and the number of steps for obtaining the structure, the cost capability cannot be reduced so much. In general, the total non-defective rate is obtained by multiplying the non-defective rate of each manufacturing process (actually less than 100%). Therefore, when a reflective plate is formed through a complicated number of steps particularly on the reflective pixel substrate 101 which is the same substrate,
The number of manufacturing steps is unbalancedly increased toward the reflective pixel substrate 101 as compared with the counter substrate 102. Thereby, the overall non-defective rate on the reflective pixel substrate 101 side decreases.

In connection with the above-mentioned item, the counter substrate 102
Since the number of manufacturing steps on the reflective pixel substrate 101 side is larger than that on the side, when the respective substrates are formed in parallel, the manufacturing time and the number of manufacturing days of the reflective pixel substrate 101 are considerably longer than those of the counter substrate 102. turn into. Therefore, the total manufacturing period is increased, and the stock period caused by useless production is prolonged.

In order to provide a bright display, it is preferable to design the reflective electrode 113 as large as possible so as to improve the aperture ratio. However, when the size of the reflective electrode 113 is increased, the reflective electrode 113 may be connected to the TFT forming portion where the TFT 120 is formed, the scan line 111 or the display signal line 112.
In a plane. However, the display signal line 112 protrudes from the insulating substrate 131 in the direction perpendicular to the substrate surface at the intersection of the scanning line 111 and the display signal line 112 and at the TFT element formation portion. Organic insulating film 1
34 becomes thin, a short-circuit failure between the reflective electrode 113 and the display signal line 112 occurs, and the reliability decreases. Moreover,
The reflective liquid crystal display is different from the transmissive liquid crystal display,
In many cases, an inorganic film made of high-hardness silicon nitride or the like is not formed on the display signal line 112, so that the occurrence rate of such defective products is further increased.

In order to appropriately obtain the above-described complicated shape of the reflective electrode 113 having good reflection efficiency, when applying and supplying the material of the resin layer (organic insulating film 134) thereunder, the viscosity is measured by sampling. For example, it is preferable to manage the film so that the film can be formed to be flat and have an appropriate film thickness. However, even if the control is performed to some extent, the viscosity of the resin layer changes with time depending on circumstances such as troubles in the apparatus itself and variations in operation. As a result, unevenness in film thickness and flatness may occur suddenly, resulting in loss of repair (rework) or disposal, or deterioration of quality. Further, steps such as intersections of the scanning lines 111 and the display signal lines 112 on one substrate side, and a shape in which a number of steps due to each wiring are formed in a lattice shape, for example, are also significant factors other than a change in viscosity due to defective products. one of.

The present invention has been made in view of the above-mentioned conventional problems, and reduces the occurrence of cracks and pinholes in the gate insulating film, improves the yield, drastically reduces the cost, and reduces the time. Suppress reliability degradation caused by cracks in the gate insulating film that occurs, reduce the number of substrate manufacturing steps to improve yield, shorten the manufacturing period, reduce the load capacitance added to each wiring, and reduce signal delay. Reduce
It is an object of the present invention to provide a reflective liquid crystal display device having a high aperture, a bright screen, and low power consumption by increasing the aperture ratio.

[0052]

According to a first aspect of the present invention, there is provided a liquid crystal display device comprising: an insulating film having irregularities; and a reflecting plate provided on the insulating film. A first substrate including the first substrate, a second substrate opposed to the first substrate, and a plurality of pixel electrodes provided on one of the first substrate and the second substrate and arranged in a matrix A reflective liquid crystal display device comprising: a counter electrode provided on the other substrate on which the pixel electrode is not arranged; and a liquid crystal layer sandwiched between the first substrate and the second substrate. Wherein the first substrate or the second substrate having the pixel electrode includes a plurality of scanning lines and a plurality of reference signal lines arranged in parallel with each other, and the scanning line, the reference signal line, and the pixel Matrix connected to the electrodes And the first substrate or the second substrate having the counter electrode includes a plurality of display signal lines arranged in a direction intersecting with the scanning lines. And

According to the above configuration, the scanning lines and the reference signal lines formed on the same substrate are arranged so as to be parallel to each other. Further, the display signal lines arranged in the direction intersecting with the scanning lines and the reference signal lines are provided on a substrate different from the scanning lines and the reference signal lines. Therefore,
The wires do not cross each other on the same substrate. Further, since the scanning lines and the reference signal lines are formed at a certain interval, the pattern forming accuracy is improved, and the yield is stabilized.

If the display signal lines are arranged on the same substrate as the scanning lines and the reference signal lines, the wirings cross each other on the same substrate. At this intersection, the wiring located in the upper layer is disconnected, or the wiring located in the upper layer and the wiring located in the lower layer are short-circuited, causing a reduction in yield. In addition, cracks occur in the interlayer insulating film provided between the wiring located in the upper layer and the wiring located in the lower layer with the lapse of time due to the influence of the film formation residual stress applied to the intersection between the wirings, and defects occur. May occur.

Therefore, the liquid crystal display device according to the first aspect of the present invention is configured such that the wirings do not cross each other on the same substrate, thereby preventing defects such as short-circuiting between the wirings and disconnection of the wirings. The yield can be improved and a highly reliable reflective liquid crystal display device can be provided.

Further, since the scanning lines and the display signal lines are formed on different substrates, only the non-defective products of each substrate can be combined. The yield can be improved as compared with a configuration in which signal lines and signal lines are formed on the same substrate.

The details are as follows. Generally, the total non-defective rate is the non-defective rate of each manufacturing process (actual 100%
Less). Therefore, for example, in the case where the pixel electrode is provided on the first substrate, the yield of the step of forming up to the scanning line is set to 95%, and the yield of the step of forming the display signal line on the first substrate is further reduced. Assume 80%.

In the above case, according to the first aspect of the present invention, the yield of the first substrate is 95%, and the stepped shape is eliminated in the second substrate on which the counter electrode is formed, so that the formation of the display signal line is prevented. The yield of the process is nearly 100%, and there are almost no defects. On the other hand, in a conventional configuration in which the scanning lines and the display signal lines are formed on the same substrate,
The yield of the substrate is 0.95 × 0.8 = 76%.

As described above, on the pixel substrate side, the yield is 19
%, And the liquid crystal display device according to the first aspect of the present invention has a significantly higher non-defective rate than the conventional liquid crystal display device.

Actually, the difference in the yield rate is not simply obtained as described above due to other steps such as the production and inspection of the reflection plate and the adjustment of the opposing substrate. On some models, a large difference occurs.

Further, since there is no intersection of each wiring on the same substrate, the step regions on the first and second substrates are reduced, and accordingly, the shape of the insulating film below the reflector can be obtained stably. Can be. Thereby, defects such as a short circuit between the reflector and the wiring can be reduced.

Further, by forming the scanning lines and the display signal lines on different substrates, it is possible to reduce the number of manufacturing steps on the pixel substrate side, which is larger in the conventional configuration than in the counter substrate. That is, the difference in the number of manufacturing steps between the first substrate and the second substrate can be reduced.

Therefore, since the manufacturing processes of the first substrate and the second substrate can be separately processed in parallel, the manufacturing time or the number of manufacturing days can be shortened, the delivery time can be shortened, and wasteful production and stock (or in-process stock) can be reduced. Can be reduced. In addition, the total yield can be improved by reducing the difference in the yield between the first substrate and the second substrate and combining non-defective products of the first substrate and the second substrate.

As a result, the manufacturing period and the stock period can be shortened.

Further, since the scanning lines and the reflective electrodes do not intersect with the display signal lines, even if the number of wirings increases, the intersections of the wirings do not increase.

As a result, the load capacitance added to each wiring can be reduced and the signal delay can be reduced, as compared with the related art, so that a material having a higher specific resistance by one rank can be used as the wiring material. The degree of freedom increases.

The liquid crystal display device according to the second aspect of the present invention provides
In order to solve the above-mentioned problem, in addition to the configuration of the first aspect, the reflection plate is formed integrally with the pixel electrode or the counter electrode provided on the first substrate. And

According to the above structure, the pixel electrode or the counter electrode provided on the first substrate and the reflector are integrally formed, so that the number of steps for manufacturing the first substrate can be reduced. Can be. Since the total non-defective rate is obtained by multiplying the non-defective rate of each manufacturing process, the total non-defective rate of the first substrate is improved by reducing the number of manufacturing steps.

By the way, the above-mentioned reflecting plate and the above-mentioned switching element have a large number of manufacturing steps, and the yield is relatively low. Therefore, when the reflection plate is integrally formed with the counter electrode, the number of manufacturing steps and the defective rate of the first substrate and the second substrate can be balanced, the number of manufacturing days can be further reduced, and the overall non-defective product rate can be improved. Further, it is easy to form a reflection plate having a high reflectance by using a low-resistance wiring such as aluminum for the counter electrode.

As a result, the yield can be improved and the manufacturing period can be shortened.

A liquid crystal display device according to a third aspect of the present invention comprises:
In order to solve the above problem, in addition to the configuration of claim 1 or 2, the three-terminal switching element has a gate electrode connected to the scanning line, and the gate electrode and the scanning line And the width of the gate electrode is formed to be narrower than the width of the scanning line.

According to the above configuration, the gate electrode of the three-terminal switching element is arranged so as to be substantially in line with the scanning line. If the gate electrode is not substantially in line with the scanning line but has a shape protruding in a plane from the scanning line, other terminals of the three-terminal switching element and the like are connected to the scanning line. As a result, the yield may decrease, or the parasitic capacitance or the liquid crystal capacitance leak may increase.

The width of the gate electrode is formed to be smaller than the width of the scanning line. In general, it is preferable that the scanning line be as wide as possible so that the resistance is reduced to reduce the signal delay. On the other hand, a narrower gate electrode improves the display quality by reducing the parasitic capacitance, etc. it can.

As a result, it is possible to provide a liquid crystal display device with a high display quality, in which the yield is further improved and the signal delay is reduced.

The liquid crystal display device according to the fourth aspect of the present invention provides:
In order to solve the above-mentioned problem, in addition to the configuration according to any one of claims 1 to 3, the reflection plate is provided with a transmission portion that transmits light, and a reflective display and a transmission type are provided. It is characterized in that it is used together with display.

According to the above configuration, the reflection plate has a transmitting portion for transmitting light. That is, the first substrate has a portion of the transmissive display structure that transmits light and a portion of the reflective display structure that reflects light.

Thus, for example, a display image can be recognized by a reflective display structure in a bright surrounding area, and a display image can be recognized by a transmissive display structure in a dark place.

By having both a transmission type and a reflection type display structure, the structure becomes complicated and fine, and there is a possibility that the non-defective product rate and the reliability may be reduced. The effect reduces the components and the number of steps of each substrate,
It is possible to improve the non-defective product rate and reduce the decrease in reliability. In addition, such a liquid crystal of both the transmission type and the reflection type has a greater effect of improving the yield rate, reliability, and shortening the manufacturing period than liquid crystals used for a simple reflection type.

[0079]

[Embodiment 1] An embodiment of the present invention will be described with reference to FIGS.
It is as follows.

FIG. 1 is a simulated perspective view partially including a circuit diagram in the liquid crystal display device according to the present embodiment.
The liquid crystal display device 1 includes a reflective pixel substrate (first substrate) 2
Liquid crystal (not shown) is injected between the substrate and the counter substrate (second substrate) 3.

The reflective pixel substrate 2 includes a plurality of scanning lines 5 arranged substantially in parallel with each other on the insulating substrate 4 and a plurality of reference signals alternately and substantially parallel to the scanning lines 5. Line 6
A common wiring 7 for connecting the plurality of reference signal lines 6 to each other; reflection electrodes (pixel electrodes, reflection plates) 8 arranged in a matrix; and a reflection electrode 8 provided for each reflection electrode 8. A thin film transistor (hereinafter referred to as TFT) 9 which is a three-terminal switching element that is selectively driven.

The scanning lines 5 and the reference signal lines 6 are arranged alternately and substantially parallel to each other (in the form of stripes). The scanning line 5 and the reference signal line 6 are
In many cases, 1000 or more are provided. Further, the lengths of the scanning lines 5 and the reference signal lines 6 may be as long as 200 mm to 500 mm or more. Therefore, the scanning line 5 and the reference signal line 6 are connected to each other by 200
m and 500 m or more.

The scanning line 5 and the reference signal line 6
Is Ti (titanium) -containing Al having a thickness of about 330 nm.
(Aluminum) or the like. Here, T
i is contained at about 3 wt%. Since the wiring made of such Ti-containing Al has low resistance, the line width can be reduced. Therefore, the aperture ratio is improved.

As a result, the thickness can be reduced as compared with other materials, the first insulating film can be thinned, and the throughput can be improved. Further, the wiring made of Ti-containing Al has relatively good adhesion to glass, an insulating film and the like, is provided at an external signal input terminal (not shown), and has a low contact resistance with an upper layer ITO (not shown). , Is relatively inexpensive. Note that the scanning lines 5 and the reference signal lines 6 are not limited thereto, and may be chrome or tantalum.

The reflection electrode 8 is arranged such that both ends of the reflection electrode 8 are superimposed on the reference signal line 6 in a plane, and a substantially central portion of the reflection electrode 8 is superimposed on the scanning line 5 in a plane. It has both a function as a pixel electrode and a function as a reflector.

The TFT 9 is a three-terminal switching element arranged in a matrix. Gate electrodes (described by circuit symbols) of the TFTs 9 arranged in the same column are connected to the same scanning line 5. Similarly,
Source electrodes (described by circuit symbols) of the TFTs 9 arranged in the same column are connected to the same reference signal line 6. Also, the drain electrode of the TFT 9 (described by the circuit symbol)
Are connected to the reflection electrodes 8 respectively. Note that the source electrode and the drain electrode can be interchanged.

On the other hand, the transparent substrate 10
Above, a plurality of display signal lines 11 extending in a direction intersecting the scanning lines 5 and the reference signal lines 6 are arranged. The display signal lines 11 are provided continuously with the same material and the same width as a plurality of counter electrodes provided to correspond to the reflection electrodes 8 respectively. That is, the plurality of display signal lines 11 also serving as the counter electrode are formed of a transparent conductive film having the same width, and are provided substantially in parallel (in a stripe shape), for example, several hundreds or more.

In the present embodiment, the display signal line 11 is formed continuously and integrally with the opposite electrode with the same material and the same width. However, the present invention is not limited to this configuration. , A plurality of ITOs (Indi
um Tin Oxide) film can be connected to each row by a display signal line made of a thin metal wire.

Next, in order to explain the structure of the liquid crystal display device according to the present embodiment in more detail, FIG. 2 is a plan view showing one pixel in the reflective pixel substrate 2, and FIG.
2 is a sectional view taken along the line AA of FIG.

A plurality of scanning lines 5 and a plurality of reference signal lines 6 are provided substantially in parallel with each other on a transparent insulating substrate 4 made of glass, silicon, or the like. Adjacent scan line 5
And the reference signal line 6 are formed at an interval of the representative distance d. The gate electrode 21 branches from the scanning line 5 at predetermined intervals (here, between the reflective electrodes 8 arranged in adjacent columns) without protruding, and is formed so as to include the function of the scanning line 5. Have been. That is, the gate electrodes 21 and the scanning lines 5 are provided alternately and continuously on a straight line. Further, the width of the gate electrode 21 is formed smaller than the width of the scanning line 5.

Except for the connection portion with other wirings, silicon nitride (SiNx), silicon nitride (SiNx), or the like covers almost the entire surface of the reflective pixel substrate 2 covering the scanning line 5, the gate electrode 21, and the reference signal line 6. A gate insulating film 22 made of silicon oxide (SiOx) or the like is formed.

Further, above the gate electrode 21,
A semiconductor layer 23 is formed via the gate insulating film 22. The semiconductor layer 23 is made of amorphous silicon (a-Si), polycrystalline silicon (p-Si), cadmium selenide (CdSe), or the like. At both ends of the semiconductor layer 23, contact layers 24a and 24b made of microcrystalline n + type a-Si or the like are formed.

On one contact layer 24a, a source electrode 25 made of ITO having a thickness of about 200 nm is formed so as to overlap. From the source electrode 25, an extending portion 25a made of the same material as the source electrode 25 and provided in one film shape is formed.
Extends.

On the other contact layer 24b, a drain electrode 26 made of the same material as the source electrode 25 is formed so as to overlap. Extending from the drain electrode 26 is an extension 26a made of the same material as that of the drain electrode 26 and provided in a single film.

The ITO is used as a single layer of the external signal input electrode portion or as a surface layer having a multilayer structure, and has the most stable connection resistance with respect to most mounting connection materials and connection structures. Therefore, in the present embodiment, the source electrode 25 and the extending portion 25a serving as the external signal input electrode portion can be formed in a single film, and the number of manufacturing steps can be reduced. Depending on the connection structure, titanium, molybdenum, aluminum or the like can be used. For example, when a mounting connection material made of a palladium-containing silver paste material is used, molybdenum has high connection resistance.

The gate insulating film 22 on the reference signal line 6
, The source electrode 25 and the reference signal line 6 are connected to each other via the extension 25a of the source electrode 25.

After the structure around the TFT 9 is formed as described above, an organic insulating film (insulating film) 27 is formed on the entire surface of the insulating substrate 4 so as to cover the scanning line 5, the reference signal line 6, the TFT 9, and the like. It is formed. Irregularities are formed on the surface of the organic insulating film 27 opposite to the insulating substrate 4.

The step of obtaining the surface shape (concavo-convex shape) of the organic insulating film 27 as described above is different from the conventional method. First, a resin layer is applied only once, and an uneven structure is formed by half etching. Thereafter, heat sag is generated in the resin layer by heating, and the unevenness is rounded to be hardened and formed. Conventionally, the photoresist had to be applied after the application of the resin layer. Therefore, the resin layer had to be applied twice. However, in the present embodiment, the application of the resin layer is performed in this manner. It can be simplified once. By using the method as described above, even if the step of applying the resin layer is simplified from twice to once, good insulating properties can be obtained, and further, good reflection properties can be obtained due to the roundness of the uneven portions. Obtainable. In addition, as long as the pinholes are small, they can be filled at the time of heating for generating heat sagging, so that the yield rate can be further improved.

The reflection electrode 8 serving as both a reflection plate and a pixel electrode is provided on the organic insulating film 27. The reflective electrode 8 follows the surface shape of the organic insulating film 27,
Irregularities are formed. As shown in FIG. 4 (Sharp Technical Report No. 69, page 34, FIG. 4), for example, as shown in FIG. 4, specific conditions such as height, surface roughness, area, and shape (for example, for each model) Select the most appropriate uneven shape by evaluating the prototype) and randomly arrange them. Thereby, the reflection electrode 8 having good reflection characteristics can be formed.

The reflective electrode 8 is connected to the drain electrode 26
Of the drain electrode 26 via a contact hole h2 provided in a part of the organic insulating film 27 on the extended portion 26a. Further, the reflection electrode 8
An alignment film (not shown) is formed thereon.

Although the detailed structure of the opposing substrate 3 in the present embodiment is not shown, a red, green or blue color filter is formed at a position opposing the reflective electrode 8 on the reflective pixel substrate 2. A black filter is formed at a position facing the gap between the reflective electrodes 8 (a position not facing the reflective electrode 8). A display signal line (counter electrode) 11 in the form of a stripe is formed on the color filter and the black filter, and an alignment film is formed thereon.

The reflection type pixel substrate 2 formed as described above
And the opposing substrate 3, the reflective electrode 8 of the reflective pixel substrate 2,
The color filters of the opposing substrate 3 are bonded to each other so as to correspond to each other, that is, so that the positional relationship appropriately matches.

Here, it is preferable that the representative distance d indicating the interval between the scanning line 5 and the reference signal line 6 is about 12 μm or more. By setting the representative distance d to 12 μm or more, a short circuit between the scanning line 5 and the reference signal line 6 that occurs in a portion where the scanning line 5 and the reference signal line 6 are arranged in parallel can be suppressed. Specifically, the short-circuit failure between the scanning line 5 and the reference signal line 6 can be reduced to about 5% or less, and the yield can be improved. In the evaluation of the prototype, the distance between the scanning line 5 and the reference signal line 6 was approximately 12 μm or more and 300 m
It was confirmed that short-circuit failure was suppressed to 5% or less on a substrate having m length × 768 parallel patterns.

It is to be noted that such a short-circuit defect can be easily repaired in a conventional liquid crystal display device as compared with a disconnection or short-circuit defect of a wiring, which is generated at an intersection of each wiring. Therefore,
If the short-circuit failure that occurs in the portion where the scanning line 5 and the reference signal line 6 are arranged in parallel is approximately 5 to 10% or less, the cost (power) can be reduced by including a repair (rework) step.

In the present embodiment, when the length of the parallel portion (parallel spacing portion) of the scanning line 5 and the reference signal line 6 is about 300 mm each and the representative distance d is 15 μm, the scanning line 5 and the reference signal line 6 are 7
Even when 68 lines were formed, only about 2.5% of short-circuit defects occurred. Therefore, with such a short-circuit defect, the cost can be improved by reworking as described above.

Next, a method of forming the above-mentioned reflective electrode 8 having irregularities provided on the reflective pixel substrate 2 will be described with reference to FIG.

In the process P1, the scanning line 5, the gate electrode 2
1 and a reference signal line 6 are formed. A metal layer made of Ti-containing Al or the like having a thickness of about 330 nm is formed on a transparent insulating substrate 4 made of glass or the like by a sputtering method, and then patterned into a predetermined shape by a photolithographic method and etching. The line 5, the gate electrode 21, the reference signal line 6, and the like are formed simultaneously.

In step P2, a gate insulating film 22 of silicon nitride having a thickness of about 350 nm is formed on the insulating substrate 4 by a plasma CVD method or the like.

In step P3, a semiconductor layer 23 and contact layers 24a and 24b are formed. An a-Si layer having a thickness of 120 nm to be a semiconductor layer 23 and a contact layer 24
40 nm thick microcrystalline n + type a-Si to be a and 24b
The layers are sequentially formed in two layers. The formed a-Si layer and the microcrystalline n + -type a-Si layer are patterned into a predetermined shape, and the semiconductor layer 23 and the contact layers 24a and 24 are patterned.
b is formed.

In step P4, a source electrode 25, a drain electrode 26, and the like are formed. An ITO or the like having a thickness of about 200 nm is formed on the entire surface of the insulating substrate 4 by a sputtering method, and this layer is patterned into a predetermined shape to form a source electrode 25 and a drain electrode 26.

Through the above steps P1 to P4, the TFT 9 is completed.

In step P5, an organic insulating film 27 made of a photosensitive resin such as OFPR-800 manufactured by Tokyo Ohka Co., Ltd. is spin-coated on the entire surface of the insulating substrate 4 on which the TFT 9 is formed. After feeding and forming to the thickness, 100
Prebake at a low temperature of about 0 ° C. The above-mentioned organic insulating film 2
By setting the thickness of the organic insulating film 27 in the above-described range, short-circuit failure between the reflective electrode 8 and the lower film formed in a later step, which is likely to occur when the organic insulating film 27 is thin,
Contact hole h2 described later, which is likely to occur when
The structure of the liquid crystal display device having a high display quality can be efficiently obtained by reducing the disconnection failure of the conductive film or the conduction failure with the lower layer film in a part.

In step P6, a contact hole h2 and an uneven portion are formed in the organic insulating film 27 by photolithography. First, two photomask exposures are performed, and 5000 mJ /
cm ² , and 100 to 20 on the uneven portion of the organic insulating film 27.
Exposure is performed at an amount of about 0 mJ / cm ² , and development processing is performed. Thereby, the contact hole h2 reaches the extending portion 26a of the drain electrode 26, which is the bottom conductive film, and the dents of the concave and convex portions can be formed in a pattern that does not reach the lower film.

Next, when heating is performed at 200 ° C. for about 30 minutes, the corners of the edge portion are rounded and rounded, so that in the contact hole h2, the disconnection failure of the reflective electrode 8 which is the upper conductive film is reduced. In the uneven portion, the upper reflective electrode 8
By reducing the coloring due to the interference of the reflected light, and further reducing the regular reflection component, the reflection of the light source can be reduced and the display quality can be improved.

As described above, a desired uneven shape can be formed even if the resin supply step is reduced from two to one as compared with the conventional method of manufacturing an organic insulating film in a liquid crystal display device. Thus, a display device with good display quality can be obtained.

In step P7, an aluminum layer is formed on the entire surface of the organic insulating film 27, and is patterned into a predetermined shape to form the reflection electrode 8 which also functions as a pixel electrode and a reflection plate.

Thereafter, an alignment film (not shown) is formed, and the reflection type pixel substrate 2 is almost completed.

The liquid crystal sandwiched between the substrates 2 and 3 includes, for example, a guest-host liquid crystal (trade name: ZLI2327 manufactured by Merck) mixed with a black dye, an optically active substance (trade name: S811 manufactured by Merck) Of which 4.5% is mixed. However, the display mode is not limited to the phase-change guest-host mode, and other reflective liquid crystals such as a two-layer guest-host mode, a TN mode using a single polarizer, and an OCB mode may be used. Good.

Although a transparent glass substrate is used as the insulating substrate 4 in the reflective pixel substrate 2 provided with the reflective electrode 8 having a function as a reflective plate, an opaque substrate such as a silicon substrate may be used. In this case, there is an advantage that the circuit can be integrated on the substrate.

Further, the liquid crystal display device 1 according to the present embodiment
Has shown an example in which the reflective electrode 8 having the function of a reflective plate is provided on the reflective pixel substrate 2 side, but a reflective plate may be provided on the opposing substrate side.

The liquid crystal display device 1 according to the present embodiment
In the above, the reflection plate and the pixel electrode are provided integrally, but the reflection plate and the pixel electrode may be provided separately in different layers.

Since the reflection type liquid crystal display device is used for information terminal equipment, it is preferable to provide a pen input function. At this time, a structure that can integrate a pen input (tablet) function with a liquid crystal display device such as an electrostatic induction method is preferable. With such a configuration, a liquid crystal display device as an information terminal device that is small, thin, and has a bright display can be provided.

As described above, the reflection type liquid crystal display device 1 according to the present embodiment has a configuration in which the scanning lines 5 and the display signal lines 11 are not provided on the same substrate. , The scanning line 5 and the display signal line 11 do not intersect.

On the other hand, in a conventional reflection type liquid crystal display device, a scanning line and a display signal line intersecting the scanning line are arranged on the same substrate. Therefore, at the intersection of the scanning line and the display signal line, a crack or a pinhole occurs in the gate insulating film provided between the scanning line and the display signal line, and a short circuit occurs. Further, at the intersection of the scanning line and the display signal line, or at a portion where the TFT is formed, the display signal line protrudes in a direction perpendicular to the substrate. Therefore, in a portion where the display signal line protrudes, an organic insulating film provided between the reflective electrode and the display signal line and provided to insulate the reflective electrode and the display signal line becomes thin. For these reasons, when a reflective electrode is superimposed on the intersection of a scanning line and a display signal line or on a TFT portion,
There is a possibility that the reflective electrode and the display signal line are short-circuited.

However, in the present embodiment, as described above, since the display signal lines 11 are arranged on the counter substrate 3 side, the wirings do not cross each other on the same substrate. Therefore, unlike the related art, the scanning line 5 and the display signal line 11 are not short-circuited.

Further, since there is no portion where the organic insulating film is thinned, as described above, the reflection electrode 8 is connected to the scanning line 5.
Alternatively, it can be formed above the reference signal line 6 or the TFT 9. Thereby, the area of the reflective electrode 8 can be formed as large as possible, so that a high aperture ratio can be achieved.

At this time, the upper layers of the scanning lines 5 and the reference signal lines 6 include a gate insulating film 22 made of silicon nitride or the like and an organic insulating film 27 provided on the gate insulating film 22 as described later. , The reflective electrode 8, the scanning line 5 and the reference signal line 6.
Insulation between them can be reliably maintained. Therefore, it is possible to make insulation failure between the reflective electrode 8 and the scanning line 5 and the reference signal line 6 almost zero.

Further, by arranging the display signal lines 11 on the counter substrate 3 side, the number of manufacturing steps of the reflective pixel substrate 2 is reduced, and the manufacturing period is shortened. Further, since the difference in the number of manufacturing steps between the reflective pixel substrate 2 and the counter substrate 3 is reduced, the total manufacturing time for manufacturing the liquid crystal display device 1 is also reduced.

[Embodiment 2] The second embodiment of the present invention is described below with reference to FIGS. Note that, for convenience of description, the same members shown in the first embodiment are given the same numbers, and the description thereof is omitted.

FIG. 6 is a plan view of a reflection type pixel substrate (first substrate) 52 in the present embodiment, and FIG.
FIG. The structure around the TFT (three-terminal switching element) 59 of the reflective pixel substrate 52 according to the present embodiment is the same as that of the reflective pixel substrate 2 of the first embodiment.
The structure around T9 is substantially the same. However, a transparent electrode (transmissive portion) 53 made of ITO or the like is formed as a pixel electrode in a film with the drain electrode 56. The transparent electrode 5
3 is behind the liquid crystal display device, that is, a reflective pixel substrate 5
In No. 2, it is formed so as to transmit light L from an optical member incorporated in the liquid crystal display device, such as backlight, which is emitted from the side where no wiring, electrode, or the like is provided.

An organic insulating film (insulating film) 57 is formed on substantially the entire surface of the insulating substrate 4 of the reflective pixel substrate 52 except for the upper portion of the transparent electrode 53, and a portion of the transparent electrode 53 as a transmitting portion is formed. Are hole portions h of the organic insulating film 57.

A reflective electrode 58 which also functions as a reflective plate and a pixel electrode is formed so as to cover the organic insulating film 57.

Since the reflective pixel substrate 52 of the present embodiment has the above-described configuration, the reflective pixel substrate 52
Has a transmissive display structure that transmits light and a reflective display structure that does not transmit light, the liquid crystal display device according to this embodiment performs both transmissive display and reflective display. be able to.

Thus, for example, in a bright surrounding area, display image recognition can be performed by the reflective display structure, and in darkness or the like, display image recognition can be performed by using the reflective structure mainly using the transmission structure.

The structure in which the transmission type display and the reflection type display are used together as in the liquid crystal display device according to the present embodiment is a reflection type liquid crystal which performs only the reflection type display as in the first embodiment. The number of members is slightly increased as compared with the display device. However, even if the number of members is slightly increased,
The effects of the present invention according to the present embodiment, such as shortening the manufacturing period and improving the yield, are greater than those of the first embodiment.

Further, it is better to appropriately design the area ratio of the transparent electrode 53 and the reflective electrode 58 so that the display can be performed in a well-balanced manner according to the surrounding brightness and the like. In the present embodiment, about 4: 6. Area ratio. However, this differs depending on the assumed use environment of the product and the characteristics of reflection and transmitted light of the liquid crystal display device.

As described above, in the liquid crystal display device according to the present embodiment, the reflection type pixel substrate 52 has the reflection electrode 58 serving also as a reflection plate which does not transmit light and the pixel electrode, and the transparent electrode 53 which transmits light. With this configuration, both transmissive display and reflective display can be performed. Therefore,
For example, in a bright surrounding area, display image recognition can be performed by the reflective display structure unit, and in darkness or the like, display image recognition can be performed by the transmission display structure unit.

[0138]

As described above, in the liquid crystal display device according to the first aspect of the present invention, the first substrate or the second substrate having the pixel electrodes includes the plurality of scanning lines and the plurality of the plurality of scanning lines arranged in parallel with each other. A first substrate or a first substrate having a counter electrode, comprising: a reference signal line; and three terminal switching elements, each terminal of which is connected to the scanning line, the reference signal line, and the pixel electrode, and arranged in a matrix. The two substrates are
This is a configuration including a plurality of display signal lines arranged in a direction intersecting with the scanning lines.

Thus, it is possible to improve the yield by preventing defects such as short-circuiting between the wirings or between the reflection plate and the wirings or disconnection of the wirings, and to provide a highly reliable reflective liquid crystal display device. It has the effect of being able to. Further, the non-defective product rate is greatly improved as compared with the related art, and the production period and the stock period can be shortened. Further, since the signal delay can be reduced by reducing the load capacitance added to each wiring, a material having a specific resistance higher by one rank can be used as the wiring material, and the effect of increasing the degree of freedom in design is also exhibited. .

A liquid crystal display device according to a second aspect of the present invention is configured such that the reflection plate is formed integrally with the pixel electrode or the counter electrode provided on the first substrate.

As a result, in addition to the effects of the first aspect of the present invention, the yield can be improved and the manufacturing period can be shortened.

According to a third aspect of the present invention, in the liquid crystal display device, the three-terminal switching element has a gate electrode connected to the scanning line, and the gate electrode and the scanning line are substantially aligned. And the width of the gate electrode is
The configuration is such that the width is smaller than the width of the scanning line.

As a result, in addition to the effects of the first and second aspects of the present invention, it is possible to provide a high-quality liquid crystal display device with improved yield and reduced signal delay.

In the liquid crystal display device according to the present invention, an opening for transmitting light is formed in the reflection plate.
In this configuration, the reflective display and the transmissive display are used in combination.

Thus, in addition to the effect of any one of the first to third aspects of the present invention, display image recognition is performed by a reflective display structure in a bright surrounding area, and a display image is recognized by a transmissive display structure in a dark place. This has the effect of being able to recognize.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a configuration of a liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a structure on a reflective pixel substrate side of the liquid crystal display device.

FIG. 3 is a cross-sectional view of the liquid crystal display device of FIG.

FIG. 4 is a perspective view schematically showing an uneven shape of a reflection electrode in the liquid crystal display device.

FIG. 5 is a flowchart showing a method for manufacturing a reflective electrode in the liquid crystal display device.

FIG. 6 is a plan view showing a structure on a reflective pixel substrate side of a liquid crystal display device according to a second embodiment of the present invention.

7 is a cross-sectional view of the liquid crystal display device of FIG.

FIG. 8 is a plan view on the pixel substrate side of a conventional liquid crystal display device.

FIG. 9 is a sectional view of a conventional liquid crystal display device.

FIG. 10 is a flowchart showing a conventional method for manufacturing a liquid crystal display device.

FIGS. 11A to 11D are explanatory views showing the steps of manufacturing a conventional liquid crystal display device.

FIG. 12 is an explanatory view showing a pattern of a mask used when forming a concavo-convex shape of a conventional liquid crystal display device.

[Explanation of symbols]

 Reference Signs List 1 liquid crystal display device 2 reflective pixel substrate (first substrate) 3 opposed substrate (second substrate) 5 scanning line 6 reference signal line 8 reflective electrode (pixel electrode, reflective plate) 9 thin film transistor (three terminal switching element) 11 display signal Line 21 Gate electrode 27 Organic insulating film (insulating film) 52 Reflective pixel substrate (first substrate) 53 Transparent electrode (pixel electrode) 57 Organic insulating film (insulating film) 58 Reflecting electrode (pixel electrode, reflecting plate)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H091 FA02Y FA16Y FC13 GA13 HA07 HA08 LA17 LA18 LA19 LA20 LA30 2H092 JA24 JA34 JA37 JA41 JA46 JB22 JB31 MA05 MA08 MA12 MA19 MA29 NA03 NA07 NA26 NA27 NA28 NA29 PA01 PA02 PA08 PA12 QA07 QA08 AA18 BB01 CC07 DD02 DD05 EE23 FF02 FF03 GG02 GG04 GG13 GG15 GG24 HK03 HK04 HK07 HK09 HK15 HK16 HK33 NN27 NN36 NN40 QQ09 QQ19

Claims (4)

[Claims] A first substrate including an insulating film having projections and depressions and a reflector provided on the insulating film; a second substrate opposed to the first substrate; A plurality of pixel electrodes provided on one of the second substrates and arranged in a matrix; a counter electrode provided on the other substrate on which the pixel electrodes are not provided; In a reflection type liquid crystal display device including a liquid crystal layer sandwiched between the second substrate and the second substrate, the first substrate or the second substrate having the pixel electrode is arranged in parallel with each other. A plurality of scanning lines and a plurality of reference signal lines, and the scanning lines, the reference signal lines,
And a three-terminal switching element connected to the pixel electrode and arranged in a matrix, wherein the first substrate or the second substrate having the counter electrode is arranged in a direction intersecting the scanning line. A reflective liquid crystal display device comprising a plurality of display signal lines. 2. The liquid crystal display device according to claim 1, wherein the reflection plate is formed integrally with the pixel electrode or the counter electrode provided on the first substrate. 3. The three-terminal switching element has a gate electrode connected to the scanning line, the gate electrode and the scanning line are arranged substantially in a straight line, and the width of the gate electrode is 3. The liquid crystal display device according to claim 1, wherein the width of the scanning line is smaller than the width of the scanning line. 4. The reflection plate according to claim 1, wherein a transmission portion for transmitting light is formed on the reflection plate, and both a reflection type display and a transmission type display are used. Liquid crystal display device.