JP2000208310A - Variable resistor - Google Patents
Variable resistorInfo
- Publication number
- JP2000208310A JP2000208310A JP11009640A JP964099A JP2000208310A JP 2000208310 A JP2000208310 A JP 2000208310A JP 11009640 A JP11009640 A JP 11009640A JP 964099 A JP964099 A JP 964099A JP 2000208310 A JP2000208310 A JP 2000208310A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- pattern
- solder
- ceramic substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 60
- 239000000919 ceramic Substances 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000011195 cermet Substances 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 5
- 238000010304 firing Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 230000008602 contraction Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Adjustable Resistors (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Details Of Resistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、音響機器などに使
用される可変抵抗器に関する。The present invention relates to a variable resistor used for audio equipment and the like.
【０００２】[0002]
【従来の技術】従来の可変抵抗器を図６〜図８に基づい
て説明すると、矩形状のセラミック基板２１は、中心部
に設けられた円形状の孔２１ａと、端部の近傍に設けら
れた一対の取付孔２１ｂとを有する。また、セラミック
基板２１上に形成された一対の電極パターン２２は、接
続導体部２２ａと、取付孔２１ｂを囲むように形成され
た半田付導体部２２ｂとで構成され、この電極パターン
２２は、銀とガラスフリットからなるサーメット系電極
を、セラミック基板２１上面に焼成して形成されてい
る。そして、この焼成によって、電極パターン２２は、
セラミック基板２１にしっかりと密着した状態となって
いる。2. Description of the Related Art A conventional variable resistor will be described with reference to FIGS. 6 to 8. A rectangular ceramic substrate 21 is provided with a circular hole 21a provided at the center and a hole 21a near the end. And a pair of mounting holes 21b. The pair of electrode patterns 22 formed on the ceramic substrate 21 includes a connection conductor portion 22a and a soldered conductor portion 22b formed so as to surround the mounting hole 21b. And a cermet-based electrode made of glass frit are formed by firing on the upper surface of the ceramic substrate 21. And, by this firing, the electrode pattern 22 becomes
It is in a state of being tightly adhered to the ceramic substrate 21.
【０００３】また、セラミック基板２１上に形成され、
略円弧状をなす抵抗パターン２３は、抵抗可変を行わし
める抵抗部２３ａを有し、この抵抗部２３ａの端部は、
それぞれ一対の電極パターン２２の接続導体部２２ａを
覆った状態で、電極パターン２２に接続されている。そ
して、この抵抗パターン２３は、酸化ルテニウムとガラ
スフリットを主成分とするサーメット系抵抗体を、セラ
ミック基板２１上面に焼成して形成されている。そし
て、この焼成によって、抵抗パターン２３は、セラミッ
ク基板２１にしっかりと密着した状態となっている。[0003] Further, the semiconductor device is formed on a ceramic substrate 21,
The resistance pattern 23 having a substantially arc shape has a resistance portion 23a for performing a resistance change.
Each of the pair of electrode patterns 22 is connected to the electrode pattern 22 while covering the connection conductor portion 22a. The resistance pattern 23 is formed by firing a cermet-based resistor mainly composed of ruthenium oxide and glass frit on the upper surface of the ceramic substrate 21. Then, by this firing, the resistance pattern 23 is in a state of being firmly adhered to the ceramic substrate 21.
【０００４】また、金属材からなる端子部２４は、図８
に示すように、外部接続用の接続部２４ａと、接続部２
４ａから切り曲げされた取付部２４ｂとを有する。そし
て、この端子部２４は、取付部２４ｂをセラミック基板
２１の取付孔２１ｂに貫通して、取付部２４ｂの先端を
折り曲げし、折り曲げされた部分と接続部２４ａとでセ
ラミック基板２１を挟持して、端子部２４をセラミック
基板２１に取り付けると共に、取付部２４ｂの折り曲げ
部分が電極パターン２２の半田付導体部２２ｂに当接し
て接触するようになっている。[0004] Further, a terminal portion 24 made of a metal material is provided as shown in FIG.
As shown in FIG. 5, a connection portion 24a for external connection and a connection portion 2
4a. The terminal portion 24 penetrates the mounting portion 24b into the mounting hole 21b of the ceramic substrate 21, bends the tip of the mounting portion 24b, and clamps the ceramic substrate 21 between the bent portion and the connection portion 24a. The terminal portion 24 is attached to the ceramic substrate 21, and the bent portion of the attachment portion 24 b comes into contact with and contacts the soldered conductor portion 22 b of the electrode pattern 22.
【０００５】また、電極パターン２２と端子部２４の接
続を確実にするために、図７に示すように、半田付導体
部２２ｂに半田２５付を行った構成となっている。そし
て、セラミック基板２１の孔２１ａには、摺動子（図示
せず）を取り付けた回転体（図示せず）を取り付けて、
摺動子を抵抗パターン２３上で摺動させて、抵抗値の可
変を行うようになっている。As shown in FIG. 7, in order to ensure the connection between the electrode pattern 22 and the terminal portion 24, a solder 25 is applied to the conductor portion 22b with solder. A rotating body (not shown) to which a slider (not shown) is attached is attached to the hole 21a of the ceramic substrate 21.
The resistance value is varied by sliding the slider on the resistance pattern 23.
【０００６】従来の可変抵抗器において、前記半田２５
は、通常、鉛を含む半田で構成されたものが使用されて
いるが、しかし、近年、環境問題がクローズアップされ
た中で、鉛を含まない半田を用いる要望が高まってい
る。そして、鉛を含む半田２５においては、一般に、ヤ
ング率が２６００ｋｇｆ／ｍｍ2、線膨張係数が２２．
０ｐｐｍ／℃程度であり、鉛を含む半田２５は、このよ
うに、ヤング率の小さいものであり、このような鉛を含
む半田２５を、電極パターン２２の半田付導体２２ｂに
半田付した場合は、電極パターン２２は銀が主成分のた
め半田２５が付くが、抵抗パターン２３はガラス成分が
多いので半田２５が付かず、よって、図７に示すよう
に、半田２５が抵抗パターン２３には接着しない状態
で、端子部２４の取付部２４ｂを覆った状態で半田付導
体２２ｂに接着される。In the conventional variable resistor, the solder 25
In general, a solder made of lead-containing solder is used. However, in recent years, as environmental issues have been highlighted, there has been an increasing demand for using lead-free solder. In addition, the solder 25 containing lead generally has a Young's modulus of 2600 kgf / mm 2 and a coefficient of linear expansion of 22.0 kgf / mm 2 .
The solder 25 containing lead is about 0 ppm / ° C. and thus has a low Young's modulus. When the solder 25 containing such lead is soldered to the soldered conductor 22 b of the electrode pattern 22, Since the electrode pattern 22 is mainly composed of silver, the solder 25 is attached to the electrode pattern 22. However, the resistance pattern 23 is not attached because the glass component is large, so that the solder 25 is bonded to the resistance pattern 23 as shown in FIG. In a state where the terminal portion 24 is not covered, the terminal portion 24 is bonded to the soldered conductor 22b while covering the mounting portion 24b.
【０００７】そして、このように、鉛を含む半田２５を
使用した可変抵抗器に対して、ヒートサイクル試験（‐
４０℃〜８０℃での１０００サイクル試験）を行った結
果、鉛を含む半田２５は、線膨張係数が比較的大きい反
面、ヤング率が小さいため、サイクル試験では、半田２
５の膨張、収縮によって、セラミック基板２１にクラッ
クが無く、電極パターン２２と抵抗パターン２３との断
線不良は、生じなかった。[0007] Thus, a heat cycle test (-) is performed on the variable resistor using the solder 25 containing lead.
As a result of performing a 1000 cycle test at 40 ° C. to 80 ° C.), the solder 25 containing lead has a relatively large coefficient of linear expansion, but a small Young's modulus.
Due to the expansion and contraction of No. 5, no crack was found in the ceramic substrate 21 and no disconnection failure between the electrode pattern 22 and the resistance pattern 23 occurred.
【０００８】また、環境問題の要望に基づき、鉛入りの
半田に代えて鉛を含まない半田２５を電極パターン２２
の半田付導体２２ｂに半田付した場合にも同様に、図７
に示すように、半田２５が抵抗パターン２３には接着し
ない状態で、端子部２４の取付部２４ｂを覆った状態で
半田付導体２２ｂに接着される。そして、このように、
鉛を含まない半田２５を使用した可変抵抗器に対して、
ヒートサイクル試験（‐４０℃〜８０℃での１０００サ
イクル試験）を行った結果、図７に示すように、抵抗パ
ターン２３の抵抗部２３ａの端部と半田２５との全境界
部分において、セラミック基板２１上部にクラックを生
じ、電極パターン２２と抵抗パターン２３との間に５％
程度の割合で断線を生じるという問題が発生した。Further, in response to demands for environmental problems, a lead-free solder 25 is replaced by a lead-free solder 25 instead of the lead-containing solder.
7 when soldering to the soldering conductor 22b of FIG.
As shown in (2), the solder 25 is adhered to the soldered conductor 22b in a state where the solder 25 does not adhere to the resistance pattern 23 and covers the mounting portion 24b of the terminal portion 24. And like this,
For a variable resistor using lead-free solder 25,
As a result of the heat cycle test (1000 cycle test at −40 ° C. to 80 ° C.), as shown in FIG. 7, the ceramic substrate was formed at the entire boundary between the end of the resistance portion 23 a of the resistance pattern 23 and the solder 25. A crack occurs in the upper part 21 and 5% between the electrode pattern 22 and the resistance pattern 23
There was a problem that the disconnection occurred at about the same rate.
【０００９】即ち、鉛を含まない半田２５は、ヤング率
が４０００ｋｇｆ／ｍｍ2、並びに線膨張係数が２０．
９ｐｐｍ／℃程度となっており、この鉛を含まない半田
２５は、鉛を含む半田よりもヤング率が極めて大きなも
のとなっている。従って、電極パターン２２と抵抗パタ
ーン２３は、焼成によって、セラミック基板２１にしっ
かりと密着した状態にある中で、ヒートサイクル試験で
の鉛を含まない半田２５の膨張、収縮によって、半田２
５の大きなヤング率による力が電極パターン２２と抵抗
パターン２３の境界線Ｋ２にかかり、このため、セラミ
ック基板２１にクラックを生じて、電極パターン２２と
抵抗パターン２３との断線不良を生じるものであった。
即ち、鉛を含まない半田２５の膨張、収縮による力は、
抵抗パターン２３の抵抗部２３ａの端部における短い境
界線Ｋ２に集中して、セラミック基板２１にクラックを
起こすものであった。That is, the solder 25 containing no lead has a Young's modulus of 4000 kgf / mm 2 and a linear expansion coefficient of 20.
It is about 9 ppm / ° C., and the lead-free solder 25 has a much higher Young's modulus than the lead-containing solder. Accordingly, while the electrode pattern 22 and the resistance pattern 23 are firmly adhered to the ceramic substrate 21 by baking, the expansion and contraction of the lead-free solder 25 in the heat cycle test causes the solder 2 to expand.
A force due to a large Young's modulus of 5 is applied to the boundary line K2 between the electrode pattern 22 and the resistance pattern 23, thereby causing a crack in the ceramic substrate 21 and causing a disconnection failure between the electrode pattern 22 and the resistance pattern 23. Was.
That is, the force due to expansion and contraction of the solder 25 containing no lead is
Cracks were caused in the ceramic substrate 21 by concentrating on the short boundary line K2 at the end of the resistance portion 23a of the resistance pattern 23.
【００１０】[0010]
【発明が解決しようとする課題】従来の可変抵抗器にお
いて、鉛を含まない半田２５を使用したときは、半田２
５の膨張、収縮によって、半田２５の大きなヤング率に
よる力が電極パターン２２と抵抗パターン２３との間の
短い境界線Ｋ２に集中してかかり、このため、セラミッ
ク基板２１にクラックを生じて、電極パターン２２と抵
抗パターン２３との断線不良を生じるという問題があ
る。In the conventional variable resistor, when the solder 25 containing no lead is used, the solder 2
Due to the expansion and contraction of 5, the force due to the large Young's modulus of the solder 25 is concentrated on the short boundary line K2 between the electrode pattern 22 and the resistance pattern 23. There is a problem that disconnection failure between the pattern 22 and the resistance pattern 23 occurs.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決するため
の第１の解決手段として、セラミック基板と、該セラミ
ック基板上に形成されたサーメット系抵抗体からなる抵
抗パターンと、前記セラミック基板上に形成され、前記
抵抗パターンの端部に接続されたサーメット系電極から
なる電極パターンと、前記抵抗パターン上を摺動する摺
動子とを備え、前記抵抗パターンは、抵抗変化を行わし
めるための抵抗部と、前記摺動子の摺動範囲外に位置
し、前記抵抗部の端部から前記抵抗部の形成方向に延長
して形成された延長部とを有し、また、前記電極パター
ンは、前記抵抗部を接続するための接続導体部と、半田
付を行う半田付導体部とを有し、前記接続導体部を覆う
ように前記抵抗部を形成すると共に、前記半田付導体部
の一部を覆うように前記延長部を形成して、前記電極パ
ターン上における前記電極パターンと前記抵抗パターン
との接続長さを長くした構成とした。また、第２の解決
手段として、前記半田付導体部上に形成される半田は、
鉛を含まない半田を使用した構成とした。また、第３の
解決手段として、前記半田は、ヤング率が４０００ｋｇ
ｆ／ｍｍ2以上のもを使用した構成とした。As a first means for solving the above problems, a ceramic substrate, a resistance pattern formed of a cermet-based resistor formed on the ceramic substrate, and An electrode pattern formed of a cermet-based electrode formed and connected to an end of the resistance pattern, and a slider that slides on the resistance pattern, wherein the resistance pattern has a resistance for causing a resistance change. And an extension located outside the sliding range of the slider, extending from an end of the resistor in the direction in which the resistor is formed, and the electrode pattern includes: A connection conductor for connecting the resistor, and a solder conductor for performing soldering, the resistor is formed so as to cover the connection conductor, and a part of the solder conductor. To cover To form a serial extension and a configuration in which a longer connection lengths between the electrode pattern and the resistor pattern on the electrode pattern. Further, as a second solution, the solder formed on the soldered conductor portion is:
A configuration using solder containing no lead was used. As a third solution, the solder has a Young's modulus of 4000 kg.
A configuration using a f / mm 2 or more was adopted.
【００１２】[0012]
【発明の実施の形態】本発明の可変抵抗器を図１〜図５
に基づいて説明すると、図１は本発明の可変抵抗器の第
１の実施例に係る平面図、図２は本発明の可変抵抗器の
要部断面図、図３は本発明の可変抵抗器に係る端子部の
斜視図、図４は本発明の可変抵抗器の第２の実施例に係
る要部の平面図、図５は本発明の可変抵抗器の第３の実
施例に係る要部の平面図である。1 to 5 show a variable resistor according to the present invention.
FIG. 1 is a plan view of a variable resistor according to a first embodiment of the present invention, FIG. 2 is a sectional view of a main part of the variable resistor of the present invention, and FIG. 3 is a variable resistor of the present invention. FIG. 4 is a plan view of a main part of a variable resistor according to a second embodiment of the present invention, and FIG. 5 is a main part of a variable resistor according to a third embodiment of the present invention. FIG.
【００１３】次に、本発明の可変抵抗器の第１の実施例
における構成を図１〜図３に基づいて説明すると、矩形
状のセラミック基板１は、中心部に設けられた円形状の
孔１ａと、端部の近傍に設けられた一対の取付孔１ｂと
を有する。また、セラミック基板１上に形成された一対
の電極パターン２は、接続導体部２ａと、取付孔１ｂを
囲むように形成された半田付導体部２ｂとで構成され、
この電極パターン２は、銀とガラスフリットからなるサ
ーメット系電極を、セラミック基板１上面に焼成して形
成されている。そして、この焼成によって、電極パター
ン２は、セラミック基板１にしっかりと密着した状態と
なっている。Next, the structure of a variable resistor according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. The rectangular ceramic substrate 1 has a circular hole provided at the center. 1a and a pair of mounting holes 1b provided near the end. Further, the pair of electrode patterns 2 formed on the ceramic substrate 1 is composed of a connection conductor portion 2a and a soldered conductor portion 2b formed so as to surround the mounting hole 1b.
The electrode pattern 2 is formed by firing a cermet-based electrode made of silver and glass frit on the upper surface of the ceramic substrate 1. The electrode pattern 2 is firmly adhered to the ceramic substrate 1 by this firing.
【００１４】また、セラミック基板１上に形成され、略
円弧状をなす抵抗パターン３は、抵抗可変を行わしめる
抵抗部３ａと、抵抗部３ａの端部から抵抗部３ａの形成
方向、即ち、円弧状方向に延長して形成された延長部３
ｂとを有し、この抵抗部３ａの端部は、それぞれ一対の
電極パターン２の接続導体部２ａを覆った状態で、電極
パターン２に接続されると共に、延長部３ｂは、半田付
導体部２ｂの側縁部に沿って伸びて、半田付導体部２ｂ
上の一部を覆った状態で電極パターン２に接続されてい
る。そして、この抵抗パターン３は、酸化ルテニウムと
ガラスフリットを主成分とするサーメット系抵抗体を、
セラミック基板１上面に焼成して形成されており、この
焼成によって、抵抗パターン３は、セラミック基板１に
しっかりと密着した状態となっている。The resistor pattern 3 which is formed on the ceramic substrate 1 and has a substantially arc shape includes a resistor portion 3a for performing variable resistance, and a direction in which the resistor portion 3a is formed from an end of the resistor portion 3a, that is, a circle. Extension 3 formed to extend in the arc direction
b, and the ends of the resistance portions 3a are connected to the electrode patterns 2 while covering the connection conductor portions 2a of the pair of electrode patterns 2, respectively, and the extension portions 3b are connected to the soldered conductor portions. 2b, extending along the side edge of the conductor 2b.
It is connected to the electrode pattern 2 with its upper part being covered. The resistance pattern 3 includes a cermet-based resistor mainly composed of ruthenium oxide and glass frit.
The resistor pattern 3 is formed by baking on the upper surface of the ceramic substrate 1, and the resistance pattern 3 is firmly adhered to the ceramic substrate 1 by this baking.
【００１５】また、金属材からなる端子部４は、図３に
示すように、外部接続用の接続部４ａと、接続部４ａか
ら切り曲げされた取付部４ｂとを有する。そして、この
端子部４は、取付部４ｂをセラミック基板１の取付孔１
ｂに貫通して、取付部４ｂの先端を折り曲げし、折り曲
げされた部分と接続部４ａとでセラミック基板１を挟持
して、端子部４をセラミック基板１に取り付けると共
に、取付部４ｂの折り曲げ部分が電極パターン２の半田
付導体部２ｂに当接して接触するようになっている。Further, as shown in FIG. 3, the terminal portion 4 made of a metal material has a connection portion 4a for external connection and a mounting portion 4b cut and bent from the connection portion 4a. The terminal portion 4 is configured such that the mounting portion 4 b is attached to the mounting hole 1 of the ceramic substrate 1.
b, the tip of the mounting portion 4b is bent, and the ceramic substrate 1 is sandwiched between the bent portion and the connection portion 4a, and the terminal portion 4 is mounted on the ceramic substrate 1 and the bent portion of the mounting portion 4b is bent. Are brought into contact with and contact with the soldered conductor portion 2b of the electrode pattern 2.
【００１６】また、電極パターン２と端子部４の接続を
確実にするために、図２に示すように、半田付導体部２
ｂに鉛を含まない半田５付を行った構成となっている。
そして、セラミック基板１の孔１ａには、摺動子（図示
せず）を取り付けた回転体（図示せず）を取り付けて、
摺動子を抵抗パターン３の抵抗部３ａ上で摺動させて、
抵抗値の可変を行うようになっている。即ち、延長部３
ｂは、摺動子の摺動範囲外に位置した状態となってい
る。In order to ensure the connection between the electrode pattern 2 and the terminal portion 4, as shown in FIG.
This is a configuration in which solder 5 containing no lead is attached to b.
Then, a rotating body (not shown) to which a slider (not shown) is attached is attached to the hole 1a of the ceramic substrate 1,
Slide the slider on the resistance part 3a of the resistance pattern 3,
The resistance value is varied. That is, the extension 3
b is in a state of being located outside the sliding range of the slider.
【００１７】本発明の可変抵抗器において、前記半田５
は、環境問題から鉛を含まない半田を用いているが、そ
の半田５は、ヤング率が４０００ｋｇｆ／ｍｍ2、線膨
張係数が２０．９ｐｐｍ／℃、また、セラミック基板１
は、ヤング率が３８０００ｋｇｆ／ｍｍ2、線膨張係数
が７．６ｐｐｍ／℃のものを使用して、鉛を含まない半
田５を、図２に示すように、電極パターン２の半田付導
体２ｂに半田付したものである。この場合、半田５が抵
抗パターン３には接着しない状態で、端子部４の取付部
４ｂを覆った状態で半田付導体２ｂに接着する。In the variable resistor according to the present invention, the solder 5
Uses lead-free solder for environmental reasons. The solder 5 has a Young's modulus of 4000 kgf / mm 2 , a linear expansion coefficient of 20.9 ppm / ° C., and a ceramic substrate 1.
As shown in FIG. 2, a solder 5 having no Young's modulus of 38000 kgf / mm 2 and a coefficient of linear expansion of 7.6 ppm / ° C. It is soldered. In this case, the solder 5 is adhered to the soldering conductor 2b in a state where the solder 5 does not adhere to the resistance pattern 3 and covers the mounting portion 4b of the terminal portion 4.
【００１８】そして、このように、鉛を含まない半田５
を使用した可変抵抗器に対して、ヒートサイクル試験
（‐４０℃〜８０℃での１０００サイクル試験）を行っ
た結果、半田５のヤング率が大きいが、半田５の膨張、
収縮によって、電極パターン２と抵抗パターン３との断
線不良は、生じなかった。そして、その要因は、電極パ
ターン２と抵抗パターン３が焼成によって、セラミック
基板１にしっかりと密着した状態にある中で、半田５の
大きなヤング率による力が電極パターン２と抵抗パター
ン３の境界線Ｋ１にかかるが、この境界線Ｋ１は、抵抗
部３ａの端部と延長部３ｂの側縁に跨る接続長さの長い
ものとなっているため、全ての境界線Ｋ１でクラックが
しないためである。And, as described above, the solder 5 containing no lead is used.
As a result of performing a heat cycle test (1000 cycle test at −40 ° C. to 80 ° C.) on the variable resistor using, the Young's modulus of the solder 5 is large,
Due to the shrinkage, a disconnection failure between the electrode pattern 2 and the resistance pattern 3 did not occur. The cause is that while the electrode pattern 2 and the resistance pattern 3 are firmly adhered to the ceramic substrate 1 by firing, the force due to the large Young's modulus of the solder 5 causes the boundary line between the electrode pattern 2 and the resistance pattern 3 to move. This is because the boundary K1 has a long connection length across the end of the resistance portion 3a and the side edge of the extension 3b, so that no crack occurs at all the boundary K1. .
【００１９】また、鉛を含まない半田５において、ヤン
グ率が４５００ｋｇｆ／ｍｍ2、線膨張係数が２２．２
ｐｐｍ／℃の半田５を使用して、１０００サイクルのヒ
ートサイクル試験を行った場合においても、断線は生じ
ず、また、このヤング率以上においても同様の結果が得
られるものと判断される。The lead-free solder 5 has a Young's modulus of 4500 kgf / mm 2 and a linear expansion coefficient of 22.2.
Even when a heat cycle test of 1000 cycles is performed using the solder 5 of ppm / ° C., no disconnection occurs, and it is judged that similar results can be obtained even at a Young's modulus or higher.
【００２０】また、図４は本発明における第２の実施例
を示し、この実施例は、上記第１の実施例における延長
部３ｂを、更に延長して、電極パターン２の半田付導体
部３ｂの全内周側縁部に沿って形成して、抵抗パターン
３と電極パターン２との境界線Ｋ１、即ち、接続長さを
より長くしたものである。また、図５は本発明における
第３の実施例を示し、この実施例は、抵抗部３ａと延長
部３ｂの電極パターン２への境界線Ｋ１を階段状にし
て、境界線Ｋ１を一層長くし、抵抗パターン３と電極パ
ターン２との境界線Ｋ１、即ち、接続長さをより一層長
くしたものである。FIG. 4 shows a second embodiment of the present invention. In this embodiment, the extension 3b of the first embodiment is further extended to form a soldered conductor 3b of the electrode pattern 2. Are formed along the entire inner peripheral side edge of the electrode pattern 2, and the boundary line K1 between the resistance pattern 3 and the electrode pattern 2, that is, the connection length is made longer. FIG. 5 shows a third embodiment of the present invention. In this embodiment, the boundary K1 between the resistance portion 3a and the extension 3b to the electrode pattern 2 is stepped, and the boundary K1 is further lengthened. The boundary line K1 between the resistance pattern 3 and the electrode pattern 2, that is, the connection length is further increased.
【００２１】[0021]
【発明の効果】本発明の可変抵抗器において、電極パタ
ーン２の接続導体部２ａを覆うように抵抗パターン３の
抵抗部３ａを形成すると共に、半田付導体部２ｂの一部
を覆うように抵抗パターン３の延長部３ｂを形成して、
電極パターン２上における電極パターン２と抵抗パター
ン３との接続長さを長くしたため、ヤング率の高い半田
５を使用しても、断線のない可変抵抗器を提供できる。
また、半田付導体部２ｂ上に形成される半田５は、鉛を
含まない半田を使用したため、環境に良い可変抵抗器を
提供できる。また、半田５は、ヤング率が４０００ｋｇ
ｆ／ｍｍ2以上のもを使用したため、鉛を含まない半田
で、ヤング率の大きなものを自由に使用出来て、生産性
の良好な可変抵抗器を提供できる。In the variable resistor according to the present invention, the resistor portion 3a of the resistor pattern 3 is formed so as to cover the connection conductor portion 2a of the electrode pattern 2, and the resistor is formed so as to cover a part of the conductor portion 2b with solder. Forming an extension 3b of the pattern 3,
Since the connection length between the electrode pattern 2 and the resistance pattern 3 on the electrode pattern 2 is increased, a variable resistor without disconnection can be provided even when the solder 5 having a high Young's modulus is used.
In addition, since the solder 5 formed on the soldered conductor portion 2b is a solder containing no lead, it is possible to provide an environment-friendly variable resistor. The solder 5 has a Young's modulus of 4000 kg.
Since f / mm 2 or more is used, a lead-free solder having a large Young's modulus can be used freely, and a variable resistor with good productivity can be provided.
【図１】本発明の可変抵抗器の第１の実施例に係る平面
図。FIG. 1 is a plan view of a variable resistor according to a first embodiment of the present invention.
【図２】本発明の可変抵抗器の要部断面図。FIG. 2 is a sectional view of a main part of a variable resistor according to the present invention.
【図３】本発明の可変抵抗器に係る端子部の斜視図。FIG. 3 is a perspective view of a terminal portion according to the variable resistor of the present invention.
【図４】本発明の可変抵抗器の第２の実施例に係る要部
の平面図。FIG. 4 is a plan view of a main part of a variable resistor according to a second embodiment of the present invention.
【図５】本発明の可変抵抗器の第３の実施例に係る要部
の平面図。FIG. 5 is a plan view of a main part of a variable resistor according to a third embodiment of the present invention.
【図６】従来の可変抵抗器の平面図。FIG. 6 is a plan view of a conventional variable resistor.
【図７】従来の可変抵抗器の要部断面図。FIG. 7 is a sectional view of a main part of a conventional variable resistor.
【図８】従来の可変抵抗器に係る端子部の斜視図。FIG. 8 is a perspective view of a terminal portion according to a conventional variable resistor.
１ セラミック基板 １ａ 孔 １ｂ 取付孔 ２ 電極パターン ２ａ 接続導体部 ２ｂ 半田付導体部 ３ 抵抗パターン ３ａ 抵抗部 ３ｂ 延長部 ４ 端子部 ４ａ 接続部 ４ｂ 取付部 ５ 半田 Ｋ１ 境界線 DESCRIPTION OF SYMBOLS 1 Ceramic board 1a Hole 1b Mounting hole 2 Electrode pattern 2a Connection conductor 2b Solder conductor 3 Resistance pattern 3a Resistance 3b Extension 4 Terminal 4a Connection 4b Mounting 5 Solder K1 Boundary line
Claims (3)
に形成されたサーメット系抵抗体からなる抵抗パターン
と、前記セラミック基板上に形成され、前記抵抗パター
ンの端部に接続されたサーメット系電極からなる電極パ
ターンと、前記抵抗パターン上を摺動する摺動子とを備
え、前記抵抗パターンは、抵抗変化を行わしめるための
抵抗部と、前記摺動子の摺動範囲外に位置し、前記抵抗
部の端部から前記抵抗部の形成方向に延長して形成され
た延長部とを有し、また、前記電極パターンは、前記抵
抗部を接続するための接続導体部と、半田付を行う半田
付導体部とを有し、前記接続導体部を覆うように前記抵
抗部を形成すると共に、前記半田付導体部の一部を覆う
ように前記延長部を形成して、前記電極パターン上にお
ける前記電極パターンと前記抵抗パターンとの接続長さ
を長くしたことを特徴とする可変抵抗器。1. A ceramic substrate, a resistance pattern formed of a cermet-based resistor formed on the ceramic substrate, and a cermet-based electrode formed on the ceramic substrate and connected to an end of the resistance pattern. An electrode pattern, and a slider that slides on the resistance pattern, wherein the resistance pattern is located outside a sliding range of the slider and a resistance portion for performing a resistance change; An extending portion formed by extending from an end of the portion in the forming direction of the resistance portion, and the electrode pattern includes a connection conductor portion for connecting the resistance portion, and a solder for soldering. Having a conductor portion, and forming the resistance portion so as to cover the connection conductor portion, and forming the extension portion so as to cover a part of the soldered conductor portion, and forming the extension portion on the electrode pattern. Electrode putter A connection length between the resistor and the resistor pattern is increased.
は、鉛を含まない半田を使用したことを特徴とする請求
項１記載の可変抵抗器。2. The variable resistor according to claim 1, wherein the solder formed on the soldered conductor is a solder containing no lead.
／ｍｍ2以上のもを使用したことを特徴とする請求項２
記載の可変抵抗器。3. The solder has a Young's modulus of 4000 kgf.
/ Mm 2 or more is used.
The variable resistor as described.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00964099A JP3663309B2 (en) | 1999-01-18 | 1999-01-18 | Variable resistor |
| TW88121908A TW432399B (en) | 1999-01-18 | 1999-12-14 | Variable resistor |
| CNB00100316XA CN1154122C (en) | 1999-01-18 | 2000-01-17 | Variable resistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00964099A JP3663309B2 (en) | 1999-01-18 | 1999-01-18 | Variable resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000208310A true JP2000208310A (en) | 2000-07-28 |
| JP3663309B2 JP3663309B2 (en) | 2005-06-22 |
Family
ID=11725833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00964099A Expired - Fee Related JP3663309B2 (en) | 1999-01-18 | 1999-01-18 | Variable resistor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3663309B2 (en) |
| CN (1) | CN1154122C (en) |
| TW (1) | TW432399B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005481A (en) * | 2003-06-12 | 2005-01-06 | Alps Electric Co Ltd | Variable resistor and manufacturing method therefor |
| IES84552B2 (en) * | 2005-10-19 | 2007-04-04 | Littelfuse Ireland Dev Company | A varistor and production method |
-
1999
- 1999-01-18 JP JP00964099A patent/JP3663309B2/en not_active Expired - Fee Related
- 1999-12-14 TW TW88121908A patent/TW432399B/en not_active IP Right Cessation
-
2000
- 2000-01-17 CN CNB00100316XA patent/CN1154122C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW432399B (en) | 2001-05-01 |
| CN1261199A (en) | 2000-07-26 |
| CN1154122C (en) | 2004-06-16 |
| JP3663309B2 (en) | 2005-06-22 |
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