JP2000195903A - Method and device for manufacturing electronic component connection body - Google Patents
Method and device for manufacturing electronic component connection bodyInfo
- Publication number
- JP2000195903A JP2000195903A JP10369056A JP36905698A JP2000195903A JP 2000195903 A JP2000195903 A JP 2000195903A JP 10369056 A JP10369056 A JP 10369056A JP 36905698 A JP36905698 A JP 36905698A JP 2000195903 A JP2000195903 A JP 2000195903A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- thermocompression bonding
- space
- component assembly
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 239000002313 adhesive film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75317—Removable auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品接続体の
製造技術、特に、ウェハレベルでＣＳＰ（ChipSize/Sca
le Package）を製造する方法及びその製造装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing an electronic component connector, and more particularly to a CSP (ChipSize / Sca) at a wafer level.
le Package) and an apparatus for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、ＣＳＰを用いた実装分野において
は、回路が形成されたシリコンウェハに対してインター
ポーザを実装した後、このＣＳＰ接続体をダイシングす
ることによって多数のＣＳＰを一括して製造する技術が
実用化されつつある。2. Description of the Related Art In recent years, in the field of mounting using CSPs, after mounting an interposer on a silicon wafer on which circuits are formed, a large number of CSPs are manufactured at once by dicing the CSP connection body. Technology is being put to practical use.
【０００３】一般に、インターポーザとシリコンウェハ
とを電気的に接続する場合、例えば、熱硬化性樹脂等か
らなる絶縁性接着フィルムや、この絶縁性接着剤中に導
電粒子を分散させた異方導電性接着フィルムが用いられ
る。そして、このような接着剤を用いてインターポーザ
とシリコンウェハとを熱圧着することにより、シリコン
ウェハとインターポーザとの電極同士を電気的に接続す
るようにしている。In general, when electrically connecting an interposer to a silicon wafer, for example, an insulating adhesive film made of a thermosetting resin or the like, or an anisotropic conductive film in which conductive particles are dispersed in the insulating adhesive. An adhesive film is used. The electrodes of the silicon wafer and the interposer are electrically connected to each other by thermocompression bonding the interposer and the silicon wafer using such an adhesive.
【０００４】[0004]
【発明が解決しようとする課題】ところで、従来より、
微小な電極を有する電子部品同士を接続する方法として
次のようなものが知られている。例えば、図３（ａ）に
示すように、例えばポリイミド等からなるフレキシブル
基板１０３を回路基板１０２に接続する場合には、フレ
キシブル基板１０３と回路基板１０２との接続する部分
に絶縁性接着フィルム等を挟んだ状態で、図示しないヒ
ータを有するボンディングツール１０１を用いてフレキ
シブル基板１０３を回路基板１０２に対して一定時間、
加熱しながら加圧する方法がある。By the way, conventionally,
The following is known as a method for connecting electronic components having minute electrodes. For example, as shown in FIG. 3A, when a flexible substrate 103 made of, for example, polyimide or the like is connected to the circuit substrate 102, an insulating adhesive film or the like is provided at a portion where the flexible substrate 103 and the circuit substrate 102 are connected. In the sandwiched state, the flexible substrate 103 is fixed to the circuit board 102 for a certain time by using a bonding tool 101 having a heater (not shown).
There is a method of applying pressure while heating.
【０００５】また、回路基板同士を接続する場合には、
例えば、図３（ｂ）に示すように、回路基板の間に絶縁
性接着フィルム等を挟んで仮接続した仮接続体１１３を
複数積み重ねた状態でオートクレーブ１１１内に配置
し、このオートクレーブ１１１内において、例えば錘等
を直接仮接続体１１３上に載せて仮接続体１１３に所定
の力Ｆを加えるとともに、ヒータ１１２により熱を加え
ることによって、各回路基板同士を接続する方法があ
る。When connecting circuit boards to each other,
For example, as shown in FIG. 3B, a plurality of temporary connection bodies 113 temporarily connected with an insulating adhesive film or the like sandwiched between circuit boards are arranged in an autoclave 111 in a state where a plurality of temporary connection bodies 113 are stacked. For example, there is a method in which the circuit boards are connected to each other by applying a predetermined force F to the temporary connection body 113 by directly placing a weight or the like on the temporary connection body 113 and applying heat by the heater 112.
【０００６】しかしながら、図３（ａ）に示すようなボ
ンディングツール１０１を用いた方法の場合は、ボンデ
ィングツール１０１自体が熱によって変形することか
ら、その圧着部分１０１ａにおいて均一な圧力分布及び
均一な温度分布を保つことが困難であるという問題があ
る。そのため、例えば６インチ（１５２．４mm）程度の
直径をもつ大きい面積のシリコンウェハに対して熱圧着
を行おうとすると、シリコンウェハ又はインターポーザ
に均一な圧力分布及び均一な温度分布を生じさせること
ができないという問題が発生する。However, in the case of the method using the bonding tool 101 as shown in FIG. 3A, since the bonding tool 101 itself is deformed by heat, a uniform pressure distribution and a uniform temperature in the crimping portion 101a. There is a problem that it is difficult to maintain the distribution. Therefore, when performing thermocompression bonding on a large-area silicon wafer having a diameter of, for example, about 6 inches (152.4 mm), a uniform pressure distribution and a uniform temperature distribution cannot be generated on the silicon wafer or the interposer. The problem occurs.
【０００７】一方、図３（ｂ）に示すようなオートクレ
ーブ１１１を用いた方法の場合は、ヒータ１１２を用い
てオートクレーブ１１の外側から部分的に加熱するため
オートクレーブ１１１内において正確な温度環境をつく
ることが困難である。そのため、この方法により大面積
のシリコンウェハに対して熱圧着を行おうとすると、シ
リコンウェハ又はインターポーザに熱を均一に伝導する
ことができないという問題が生じる。On the other hand, in the case of the method using the autoclave 111 as shown in FIG. 3B, since the heater 112 is used to partially heat the outside of the autoclave 11, an accurate temperature environment is created in the autoclave 111. It is difficult. Therefore, when thermocompression bonding is performed on a large-area silicon wafer by this method, there is a problem that heat cannot be uniformly transmitted to the silicon wafer or the interposer.
【０００８】また、この種の方法によって電子部品の電
極同士を接続する場合には、電極１個当たり大きな圧力
が必要とされるが、従来のオートクレーブ処理方法で
は、電子部品の各電極に十分な圧力を加えることができ
ないという問題もある。When connecting electrodes of an electronic component by this kind of method, a large pressure is required for each electrode. However, in the conventional autoclave processing method, a sufficient pressure is applied to each electrode of the electronic component. There is also the problem that pressure cannot be applied.
【０００９】本発明は、このような従来の技術の課題を
解決するためになされたもので、大面積の電子部品に対
し均一かつ十分な圧力及び熱を加えることで導通信頼性
の高い電子部品接続体を製造しうる電子部品接続体の製
造方法及びその製造装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and applies uniform and sufficient pressure and heat to a large-area electronic component to provide an electronic component having high conduction reliability. It is an object of the present invention to provide a method for manufacturing an electronic component connector capable of manufacturing a connector and a device for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１記載の発明は、微小電極を有する電
子部品同士を電気的に接続することによって電子部品接
続体を製造する方法であって、接着剤を用いて接合され
た電子部品組立体を密閉された熱圧着空間に配し、上記
電子部品組立体を発熱体に接触させながら加圧流体を用
いてこの発熱体に全面的に押圧することにより上記電子
部品同士を電気的に接続する工程を有することを特徴と
する電子部品接続体の製造方法である。According to a first aspect of the present invention, there is provided a method for manufacturing an electronic component connector by electrically connecting electronic components having minute electrodes. The electronic component assembly bonded with an adhesive is disposed in a sealed thermocompression bonding space, and the electronic component assembly is entirely brought into contact with the heating element by using a pressurized fluid while being in contact with the heating element. A method of electrically connecting the electronic components to each other by pressing the electronic component to each other.
【００１１】請求項１記載の発明の場合、加圧流体を用
いて電子部品組立体を押圧することから、電子部品組立
体の全体に均一な圧力を加えることができ、また、電子
部品組立体を、発熱体に接触させながら加圧流体を用い
て電子部品組立体を発熱体に全面的に押圧することか
ら、電子部品組立体の全体を発熱体に対して均一に密着
させて熱を伝導することができる。According to the first aspect of the present invention, since the electronic component assembly is pressed using the pressurized fluid, a uniform pressure can be applied to the entire electronic component assembly, and the electronic component assembly can be applied. The entire electronic component assembly is brought into close contact with the heating element and heat is conducted by pressing the entire electronic component assembly against the heating element using a pressurized fluid while contacting the heating element with the heating element. can do.
【００１２】したがって、請求項１記載の発明によれ
ば、電子部品組立体の全体に均一な圧力及び熱を加えて
電子部品同士を均一に熱圧着することができるため、複
数の微小電極を有する大面積の各電子部品に対してもそ
れぞれの各微小電極同士を確実に接続することができ、
その結果、導通信頼性の高い電子部品接続体を製造する
ことができる。Therefore, according to the first aspect of the present invention, a uniform pressure and heat can be applied to the whole of the electronic component assembly, so that the electronic components can be uniformly thermocompression-bonded to each other. Each microelectrode can be reliably connected to each electronic component with a large area,
As a result, it is possible to manufacture an electronic component connector having high conduction reliability.
【００１３】この場合、請求項２記載の発明のように、
請求項１記載の発明において、上記熱圧着空間内に加圧
流体を導入した後に当この熱圧着空間の容積を縮小する
ことにより上記加圧流体を圧縮する工程を有することも
効果的である。In this case, as in the second aspect of the present invention,
In the first aspect of the present invention, it is also effective to include a step of compressing the pressurized fluid by introducing a pressurized fluid into the thermocompressive space and then reducing the volume of the thermocompressive space.
【００１４】請求項２記載の発明によれば、例えば電子
部品の微小電極の数、電子部品同士の接合状態等に応じ
て、熱圧着空間内における加圧流体の圧力を最適の値に
調整することが可能になる。According to the second aspect of the present invention, the pressure of the pressurized fluid in the thermocompression bonding space is adjusted to an optimum value in accordance with, for example, the number of microelectrodes of the electronic component, the joining state of the electronic components, and the like. It becomes possible.
【００１５】また、請求項３記載の発明のように、請求
項１又は２のいずれか１項記載の発明において、上記熱
圧着空間内において上記電子部品組立体を密閉された加
熱空間に配置し、この加熱空間内を真空にすることによ
り上記電子部品組体を上記発熱体に押圧する工程を有す
ることも効果的である。According to a third aspect of the present invention, in the first aspect of the present invention, the electronic component assembly is disposed in a closed heating space within the thermocompression bonding space. It is also effective to include a step of pressing the electronic component assembly against the heating element by evacuating the heating space.
【００１６】請求項３記載の発明によれば、密閉された
加熱空間内を真空にすることによって、電子部品組立体
と発熱体との密着度をより高めることができるため、効
率良く熱を伝導して熱圧着を行うことができる。According to the third aspect of the present invention, the degree of adhesion between the electronic component assembly and the heating element can be further increased by evacuating the enclosed heating space, so that heat can be efficiently conducted. Then, thermocompression bonding can be performed.
【００１７】また、本発明によれば、加熱空間内の雰囲
気を真空にした状態で熱圧着を行うことから、接着剤の
樹脂中に気泡が入らないようにすることができ、これに
より電子部品の各電極、同士をより確実に接続すること
ができる。According to the present invention, since thermocompression bonding is performed in a state where the atmosphere in the heating space is evacuated, it is possible to prevent air bubbles from entering the resin of the adhesive. Can be more reliably connected to each other.
【００１８】一方、請求項４記載の発明は、微小電極を
有する電子部品の間に接着剤を用いて接合された電子部
品組立体に対し、上記電子部品同士を電気的に接続する
ことによって電子部品接続体を製造する装置であって、
上記電子部品組立体を配置可能な熱圧着空間を有する熱
圧着容器と、上記熱圧着容器の内部に設けられ、上記電
子部品組立体を全面的に接触した状態で加熱する加熱手
段と、上記熱圧着容器内の熱圧着空間を密閉状態に保ち
つつこの熱圧着空間内に導入された加圧流体を加圧する
加圧手段とを備えたことを特徴とする電子部品接続体製
造装置である。According to a fourth aspect of the present invention, there is provided an electronic component assembly in which electronic components having microelectrodes are bonded to each other using an adhesive by electrically connecting the electronic components to each other. An apparatus for manufacturing a component connection body,
A thermocompression bonding container having a thermocompression bonding space in which the electronic component assembly can be arranged; heating means provided inside the thermocompression bonding container for heating the electronic component assembly in full contact; And a pressurizing means for pressurizing a pressurized fluid introduced into the thermocompression bonding space while keeping the thermocompression bonding space in the thermocompression bonding container in a sealed state.
【００１９】請求項４記載の発明によれば、熱圧着容器
内に配した電子部品組立体を、加圧手段によって加圧さ
れた加圧流体で押圧して加熱手段に全面的に接触させる
ことができるため、請求項１記載の発明を容易に実施す
ることができる。According to the fourth aspect of the present invention, the electronic component assembly disposed in the thermocompression-bonding container is pressed by the pressurized fluid pressurized by the pressurizing means and brought into full contact with the heating means. Therefore, the invention described in claim 1 can be easily implemented.
【００２０】また、請求項５記載の発明は、請求項４記
載の発明において、上記加圧手段が、上記熱圧着容器内
において移動可能に配設されたピストン式の加圧機構で
あることを特徴とする。According to a fifth aspect of the present invention, in the fourth aspect, the pressurizing means is a piston-type pressurizing mechanism movably disposed in the thermocompression bonding container. Features.
【００２１】請求項５記載の発明によれば、ピストン式
の加圧機構によって熱圧着空間の容積を所望の値に縮小
することができるため、請求項２記載の発明を容易に実
施することができる。According to the fifth aspect of the present invention, the volume of the thermocompression bonding space can be reduced to a desired value by the piston type pressurizing mechanism, so that the second aspect of the invention can be easily implemented. it can.
【００２２】さらに、請求項６記載の発明は、上記電子
部品組立体を配置可能で密閉された加熱空間を上記熱圧
着容器内に形成するための密閉手段と、この加熱空間内
の気体を真空排気するための真空排気手段とを備えたこ
とを特徴とする。Further, according to the present invention, a sealing means for forming a sealed heating space in which the electronic component assembly can be arranged and sealed in the thermocompression bonding container, and a gas in the heating space is evacuated. A vacuum exhaust means for exhausting air.
【００２３】請求項６記載の発明によれば、密閉手段に
よって形成された加熱空間を真空排気手段によって真空
排気することができるため、請求項３記載の発明を容易
に実施することができる。According to the sixth aspect of the present invention, since the heating space formed by the sealing means can be evacuated by the evacuation means, the invention of the third aspect can be easily implemented.
【００２４】[0024]
【発明の実施の形態】以下、本発明に係る電子部品接続
体製造装置及びその製造方法の実施の形態を図面を参照
して詳細に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing an electronic component connector manufacturing apparatus according to an embodiment of the present invention;
【００２５】図１は、本発明の電子部品接続体製造装置
の一例の概略構成図である。本実施の形態の電子部品接
続体製造装置１は、例えば、ウェハレベルでＣＳＰを製
造する装置に適用可能なもので、絶縁性接着剤によって
接合された電子部品としてのシリコンウェハ３２及びイ
ンターポーザ３１からなる仮接続体（電子部品組立体）
３０を、熱圧着容器２内において電気的に接続するため
の装置である。FIG. 1 is a schematic configuration diagram of an example of an electronic component connector manufacturing apparatus according to the present invention. The electronic component connector manufacturing apparatus 1 according to the present embodiment is applicable to, for example, an apparatus that manufactures a CSP at a wafer level, and includes a silicon wafer 32 and an interposer 31 as electronic components joined by an insulating adhesive. A temporary connection body (electronic component assembly)
30 is a device for electrically connecting 30 in the thermocompression bonding container 2.
【００２６】図１に示すように、本実施の形態の熱圧着
容器２は、円筒状のシリンダ３と、その一方側の開口部
分を密閉するように設けられた基台４と、シリンダ３の
他方側の開口部分に設けられた蓋体５とから構成されて
いる。As shown in FIG. 1, the thermocompression bonding container 2 of the present embodiment comprises a cylindrical cylinder 3, a base 4 provided so as to seal an opening on one side thereof, and a cylinder 3. And a lid 5 provided at the opening on the other side.
【００２７】シリンダ３の内側には、金属製のピストン
（加圧手段）６が、熱圧着容器２内の空間をシリンダ３
の内壁６ａに沿って移動できるようにはめられている。Inside the cylinder 3, a metal piston (pressurizing means) 6 occupies a space inside the thermocompression bonding container 2.
Is mounted so that it can move along the inner wall 6a.
【００２８】ここで、ピストン６の中央部分には、ピス
トン６に対して垂直方向に延びる加圧軸６ａが回転自在
に取り付けられている。この加圧軸６の表面には、ねじ
部６０ａが形成されている。Here, a pressurizing shaft 6a extending in a direction perpendicular to the piston 6 is rotatably attached to a central portion of the piston 6. On the surface of the pressure shaft 6, a screw portion 60a is formed.
【００２９】そして、加圧軸６ａのねじ部６０ａが、蓋
体５に形成されたねじ穴５ａにはまり合うことで、ピス
トン６がシリンダ３の内側の所定の位置に位置決め固定
されるようになっている。When the screw portion 60a of the pressure shaft 6a fits into the screw hole 5a formed in the cover 5, the piston 6 is positioned and fixed at a predetermined position inside the cylinder 3. ing.
【００３０】また、ピストン６の側面には、ピストン６
とシリンダ３との隙間をなくすための例えばゴム等から
なるピストンリング７がはめ込まれている。Further, the piston 6
A piston ring 7 made of, for example, rubber or the like for eliminating a gap between the cylinder and the cylinder 3 is fitted therein.
【００３１】熱圧着容器２内の熱圧着空間Ｓには、基台
４、シリンダ５及びピストン６によって密閉された加圧
空間Ｓ1が形成され、ピストン６の加圧軸６ａの回転に
よって密閉状態を保ったまま加圧空間Ｓ1の容積を縮小
することでその中の気体を圧縮することができるように
なっている。A pressurized space S 1 sealed by the base 4, the cylinder 5 and the piston 6 is formed in the thermocompression space S in the thermocompression container 2, and is closed by the rotation of the pressurizing shaft 6 a of the piston 6. It has manner it is possible to compress the gas therein by reducing the still pressurized space S 1 volume was maintained.
【００３２】熱圧着容器２の外部には、例えば窒素等の
不活性ガスを圧縮した圧縮ガス（加圧流体）Ｇを充填し
たガスボンベ４１が設けられ、このガスボンベ４１から
導入管４２を介して所定量の圧縮ガスＧが熱圧着空間Ｓ
1内に導入できるように構成されている。A gas cylinder 41 filled with a compressed gas (pressurized fluid) G obtained by compressing an inert gas such as nitrogen is provided outside the thermocompression-bonding container 2. The fixed amount of compressed gas G is thermo-compressed space S
It is configured so that it can be introduced into one .
【００３３】また、熱圧着容器２には、熱圧着空間Ｓ1
内の気体を排出するための排気管４５が接続されてい
る。The thermocompression container 2 has a thermocompression space S 1.
An exhaust pipe 45 for discharging the gas inside is connected.
【００３４】基台４の上部の中央部分には、熱圧着すべ
き仮接続体３０より若干大きい面積の加熱ヒータ（発熱
体、加熱手段）１０が、基台４の上面４ａとほぼ面一
（つらいち）となるように埋め込まれている。At the center of the upper part of the base 4, a heater (heating element, heating means) 10 having an area slightly larger than the temporary connection body 30 to be thermocompression-bonded is substantially flush with the upper surface 4a of the base 4. It is embedded so that it becomes lucky.
【００３５】ここで、加熱ヒータ１０としては、例えば
セラミックヒータからなるものが用いられ、この加熱ヒ
ータ１０は、リード線１２を介して温度制御手段１３に
接続され、所望の温度に保たれるようになっている。Here, as the heater 10, for example, a heater made of a ceramic heater is used. The heater 10 is connected to a temperature control means 13 via a lead wire 12 so as to maintain a desired temperature. It has become.
【００３６】なお、加熱ヒータ１０は、基台４の下部側
へ熱を逃がさず効率良く加熱を行うため、その周囲が断
熱材１１によって取り囲まれている。The heater 10 is surrounded by a heat insulating material 11 in order to efficiently heat the heat without escaping to the lower side of the base 4.
【００３７】一方、基台４には、加熱ヒータ１０の上方
近傍に空間を密閉するための密閉手段２０が装着できる
ようになっている。On the other hand, a sealing means 20 for sealing a space in the vicinity of above the heater 10 can be mounted on the base 4.
【００３８】密閉手段２０は、例えば薄い鋼板を用いて
リング形状に形成されたシート枠２１を有し、このシー
ト枠２１に、可撓性を有する耐熱材料からなるシート部
材（密閉部材）２２が固定されて構成されている。ここ
で シート部材２２としては、例えばポリスチレン、ポ
リイミド等を用いることができる。The sealing means 20 has, for example, a sheet frame 21 formed in a ring shape using a thin steel plate, and a sheet member (sealing member) 22 made of a flexible heat-resistant material is mounted on the sheet frame 21. It is fixed and configured. Here, as the sheet member 22, for example, polystyrene, polyimide, or the like can be used.
【００３９】また、シート枠２１及びシート部材２２
は、加熱ヒータ１０の面積より余裕をもって大きく形成
されている。The seat frame 21 and the sheet member 22
Are formed larger than the area of the heater 10 with a margin.
【００４０】シート枠２１の一方の面には、位置決め用
のガイド部２３が、シート枠２１の表面に対し垂直方向
に延びるように固定されている。A guide 23 for positioning is fixed to one surface of the sheet frame 21 so as to extend in a direction perpendicular to the surface of the sheet frame 21.
【００４１】一方、基台４には、密閉手段２０のガイド
部２３と嵌合可能なガイド穴４ｂが設けられている。ま
た、基台４のガイド穴４ｂと近接する部位には、シート
枠２１の直径とほぼ同一の直径を有する例えばゴム製の
パッキン１５が埋め込まれている。On the other hand, the base 4 is provided with a guide hole 4b which can be fitted with the guide portion 23 of the sealing means 20. A rubber packing 15 having a diameter substantially equal to the diameter of the seat frame 21 is embedded in a portion of the base 4 adjacent to the guide hole 4b.
【００４２】そして、このような構成を有する密閉手段
２０が基台４上に装着された場合に、基台４と密閉手段
２０とによって加圧空間Ｓ1に対し遮られた加熱空間Ｓ2
が形成されるようになっている。When the sealing means 20 having such a configuration is mounted on the base 4, the heating space S 2 shielded from the pressurized space S 1 by the base 4 and the sealing means 20.
Is formed.
【００４３】また、熱圧着容器２の外部には真空ポンプ
（真空排気手段）５１が設けられており、この真空ポン
プ５１の動作によって、基台４を貫通する排気管５２を
介して加熱空間Ｓ2 内の気体が真空排気されるようにな
っている。なお、排気管５２の途中には、真空バルブ５
３が設けられている。Further, a vacuum pump (vacuum evacuation means) 51 is provided outside the thermocompression bonding container 2. By the operation of the vacuum pump 51, a heating space S is formed through an exhaust pipe 52 penetrating the base 4. The gas in 2 is evacuated. In the middle of the exhaust pipe 52, a vacuum valve 5 is provided.
3 are provided.
【００４４】図２（ａ）〜（ｄ）は、本実施の形態の電
子部品接続体の製造方法の一工程である電子部品接続体
の接続工程を説明するための図である。FIGS. 2A to 2D are views for explaining a connecting step of the electronic component connector, which is one process of the method of manufacturing the electronic component connector of the present embodiment.
【００４５】まず、図１に示す熱圧着容器２の内部に仮
接続体３０を挿入し、図２（ａ）に示すように、この仮
接続体３０を加熱ヒータ１０上に載置する。First, the temporary connector 30 is inserted into the thermocompression bonding container 2 shown in FIG. 1, and the temporary connector 30 is placed on the heater 10 as shown in FIG.
【００４６】本実施の形態の場合は、シリコンウェハ３
２として、例えば直径が６インチ（１５２．４mm）サイ
ズのものが用いられる。このシリコンウェハ３２には、
バンプ状の電極（微小電極）３２ａが多数形成されてい
る。In the case of this embodiment, the silicon wafer 3
As for 2, for example, one having a diameter of 6 inches (152.4 mm) is used. This silicon wafer 32 includes
A large number of bump-shaped electrodes (microelectrodes) 32a are formed.
【００４７】一方、インターポーザ３１は、シリコンウ
ェハ３２とほぼ同一の大きさを有し、シリコンウェハ３
２の各電極３２ａに対応するバンプ状の電極（微小電
極）３１ａが多数形成されている。On the other hand, the interposer 31 has substantially the same size as the silicon wafer 32 and
A large number of bump-shaped electrodes (microelectrodes) 31a corresponding to the two electrodes 32a are formed.
【００４８】そして、シリコンウェハ３２とインターポ
ーザ３１とは、それぞれの電極３２ａ、３１ａが対向す
るように位置決めされた状態で、絶縁性接着フィルム
（接着剤）３３によって仮接続されている。The silicon wafer 32 and the interposer 31 are temporarily connected by an insulating adhesive film (adhesive) 33 in a state where the respective electrodes 32a and 31a are positioned so as to face each other.
【００４９】次に、図２（ａ）（ｂ）に示すように、密
閉手段２０のガイド部２３を基台４のガイド穴４ｂには
め合わせて挿入し、密閉手段２０を基台４上に載置装着
する。これにより、シート枠２１はパッキン１５によっ
て支持され、一方、シート部材２２がたわみ、仮接続体
３０がシート部材２２によって覆われる。Next, as shown in FIGS. 2 (a) and 2 (b), the guide portion 23 of the sealing means 20 is inserted into the guide hole 4b of the base 4, and the sealing means 20 is placed on the base 4. Place and mount. Thereby, the sheet frame 21 is supported by the packing 15, while the sheet member 22 is bent, and the temporary connection body 30 is covered by the sheet member 22.
【００５０】この状態において、ピストン６の加圧軸６
ａを回転することによってピストン６を降下させ、基台
４の処理面４ａからピストン６までの高さ、すなわち、
加圧空間Ｓ1の高さＨが１５mmになった時点で加圧軸６
ａの回転を停止する。なお、この状態においては、真空
バルブ５３は、閉じておく。In this state, the pressing shaft 6 of the piston 6
The piston 6 is lowered by rotating a, and the height from the processing surface 4a of the base 4 to the piston 6, that is,
Pressing axis when the height H of the pressurized space S 1 is now 15 mm 6
The rotation of a is stopped. In this state, the vacuum valve 53 is closed.
【００５１】次に、真空ポンプ５１を起動し、加熱空間
Ｓ2の真空排気を行う。その結果、図２（ｃ）に示すよう
に、シート枠２１が基台４の上面４ａに密着するととも
に、シート部材２２が仮接続体３０及び基台４の処理面
４ａに密着する。これにより、仮接続体３０は、シート
部材２２から均一な圧力ｆを全面的に受け、仮接続体３
０のシリコンウェハ３２の下面が加熱ヒータ１０に対し
て全面的に密着する。Next, to start the vacuum pump 51 performs evacuation of the heating space S 2. As a result, as shown in FIG. 2C, the sheet frame 21 comes into close contact with the upper surface 4a of the base 4, and the sheet member 22 comes into close contact with the temporary connection body 30 and the processing surface 4a of the base 4. As a result, the temporary connector 30 receives the uniform pressure f from the sheet member 22 over the entire surface, and the temporary connector 3
The lower surface of the zero silicon wafer 32 is completely adhered to the heater 10.
【００５２】なお、基台４の処理面４ａからシート部材
２２の上面までの密着高さｈは、約１．５mm程度であ
る。The contact height h from the processing surface 4a of the base 4 to the upper surface of the sheet member 22 is about 1.5 mm.
【００５３】そして、真空バルブ５３を閉じ、導入弁４
３を開いてガスボンベ４１から圧縮ガスＧを加圧空間Ｓ
1に所定量導入する。この状態においては、加圧空間Ｓ1
内における圧縮ガスＧの圧力は、５０kg／cm2程度であ
る。Then, the vacuum valve 53 is closed, and the introduction valve 4 is closed.
3 to open compressed gas G from gas cylinder 41 to pressurized space S
Introduce a predetermined amount to 1 . In this state, the pressurized space S 1
The pressure of the compressed gas G inside is about 50 kg / cm 2 .
【００５４】その後、図２（ｄ）に示すように、ピスト
ン６の加圧軸６ａを回転しピストン６を下降させて加圧
空間Ｓ1の高さＨを３mmに設定し、加圧空間Ｓ1の容積を
約１／５に縮小する。これにより、加圧空間Ｓ1内の圧
縮ガスＧはさらに圧縮され、その圧力Ｆは約２５０〜２
６０kg／cm2になる。[0054] Thereafter, as shown in FIG. 2 (d), rotating the pressing axis 6a of the piston 6 is lowered the piston 6 to set the height H of the pressurized space S 1 to 3 mm, pressurizing space S Reduce the volume of 1 to about 1/5. Accordingly, compressed gas G of pressurized space S 1 is further compressed, the pressure F is about 250-2
It becomes 60 kg / cm 2 .
【００５５】その結果、仮接続体３０は、圧縮ガスＧに
よる圧力Ｆをシート部材２２を介して全面的に受け、加
熱ヒータ１０に押し付けられる。そして、その状態で、
加熱ヒータ１０に通電し、約２０秒間、１３０〜１８０
℃の温度で加熱を行う。As a result, the temporary connection body 30 receives the pressure F by the compressed gas G entirely through the sheet member 22 and is pressed against the heater 10. And in that state,
The heater 10 is energized for about 20 seconds and 130 to 180
Heat at a temperature of ° C.
【００５６】これにより、仮接続体３０は、圧縮ガスＧ
による大きな圧力で全面的かつ均一に押圧されるととも
に、加熱ヒータ１０に密着した状態で加熱ヒータ１０か
ら熱が加えられる。その結果、シリコンウェハ３２及び
インターポーザ３１間の絶縁性接着剤フィルム３３が溶
融し、シリコンウェハ３２の各電極３２ａとインターポ
ーザ３１の各電極３１ａとがそれぞれ電気的に接続され
てＣＳＰ接続体（電子部品接続体）３００が得られる。As a result, the temporary connection body 30 is
, And the heat is applied from the heater 10 in close contact with the heater 10. As a result, the insulating adhesive film 33 between the silicon wafer 32 and the interposer 31 is melted, and the respective electrodes 32a of the silicon wafer 32 and the respective electrodes 31a of the interposer 31 are electrically connected to each other. (Connector) 300 is obtained.
【００５７】その後、加熱ヒータ１０の通電を停止し、
ピストン６を所定の位置まで上昇させて加圧空間Ｓ1内
を減圧した後、排気管４５を開いて加圧空間Ｓ1内の圧
縮ガスＧを排気して本工程を終了する。Thereafter, the energization of the heater 10 is stopped,
After decompression of the pressurized space S 1 and the piston 6 is raised to a predetermined position, and open the exhaust pipe 45 to exhaust the compressed gas G pressurized space S 1 ends this process.
【００５８】以上述べたように本実施の形態によれば、
加圧された圧縮ガスＧを用いて非接触状態で仮接続体３
０に圧力を加えることから、大面積のシリコンウェハ３
２及びインターポーザ３１に対し大きな圧力を均一に加
えることができる。As described above, according to the present embodiment,
Using the pressurized compressed gas G, in a non-contact state, the temporary connection body 3
Since pressure is applied to 0, large area silicon wafer 3
A large pressure can be uniformly applied to the second and interposers 31.
【００５９】また、仮接続体３０を全体的に加熱ヒータ
１０に密着させた状態で加熱することから、仮接続体３
０の各部分に対して加熱ヒータ１０からに均一な熱を伝
導することができる。Further, since the temporary connection body 30 is heated in a state in which the temporary connection body 30 is brought into close contact with the heater 10 as a whole, the temporary connection body 3 is heated.
It is possible to conduct uniform heat from the heater 10 to each of the zero portions.
【００６０】このように、本実施の形態によれば、仮接
続体３０の全体に均一な圧力及び熱を加えることによっ
て、大面積のシリコンウェハ３２及びインターポーザ３
１の電極３２ａ及び電極３１ａを一括して確実に接続す
ることができ、これにより導通信頼性の高いＣＳＰ接続
体３００を製造することができる。As described above, according to the present embodiment, by applying uniform pressure and heat to the entire temporary connection body 30, the large-area silicon wafer 32 and the interposer 3
The one electrode 32a and the electrode 31a can be collectively and reliably connected together, whereby the CSP connector 300 with high conduction reliability can be manufactured.
【００６１】また、本実施の形態によれば、加圧空間Ｓ
1内にある一定の圧力の圧縮ガスＧを導入した後、ピス
トン６を降下させて加圧空間Ｓ1の高さＨを変化させる
ことによって、圧縮ガスＧの圧力を所望の値に変化させ
ることができるため、例えば、シリコンウェハ３２、イ
ンターポーザ３１のの大きさや電極３２ａ、３１ａの数
等に応じて、最適な圧力で熱圧着を行うことが可能にな
る。According to the present embodiment, the pressurized space S
After introducing the compressed gas G constant pressure within 1, by the piston 6 is lowered to change the height H of the pressurized space S 1, the pressure of the compressed gas G be changed to the desired value Therefore, for example, thermocompression bonding can be performed at an optimum pressure according to the size of the silicon wafer 32 and the interposer 31, the number of the electrodes 32a and 31a, and the like.
【００６２】さらに、本実施の形態によれば、密閉され
た加熱空間Ｓ2内を真空にすることによって、仮接続体
３０と加熱ヒータ１０との密着度をより高めることがで
きるため、効率良く熱を伝導して熱圧着を行うことがで
きる。Further, according to the present embodiment, the degree of adhesion between the temporary connection body 30 and the heater 10 can be further increased by evacuating the enclosed heating space S 2 , thereby improving the efficiency. Heat compression can be performed by conducting heat.
【００６３】さらに、本実施の形態によれば、加熱空間
Ｓ2内の雰囲気を真空にした状態で熱圧着を行うことか
ら、絶縁性接着剤フィルム３３の樹脂中に気泡が入らな
いようにすることができ、これによりシリコンウェハ３
２及びインターポーザ３１の各電極３２ａ、３１ａ同士
をより確実に接続することができる。Further, according to the present embodiment, since the thermocompression bonding is performed in a state where the atmosphere in the heating space S 2 is evacuated, air bubbles are prevented from entering the resin of the insulating adhesive film 33. And the silicon wafer 3
2 and the respective electrodes 32a, 31a of the interposer 31 can be connected more reliably.
【００６４】さらにまた、本実施の形態によれば、密閉
手段２０のシート部材２２に可撓性をもたせたことか
ら、シート部材２２を仮接続体３０に対して十分に密着
させて均一な加圧を行うことができる。Further, according to the present embodiment, the sheet member 22 of the sealing means 20 is made flexible, so that the sheet member 22 is sufficiently brought into close contact with the temporary connection body 30 so that uniform application is possible. Pressure can be performed.
【００６５】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
シート部材２２と仮接続体３０との間に、シート状の緩
衝材を挿入してもよい。このような緩衝材としては、接
着剤樹脂中の気泡を抜く等のそれほど大きな圧力を必要
としない場合には、厚さ８０μｍ程度のポリ４フッ化エ
チレン樹脂からなるシート部材を用いるとよい。一方、
シリコンウェハ３２及びインターポーザ３１の各電極３
２ａ、３１ａに集中的に加圧するためにはステンレス鋼
板を用いるとよい。It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made. For example,
A sheet-like cushioning material may be inserted between the sheet member 22 and the temporary connection body 30. If such a large pressure is not required as removing the air bubbles in the adhesive resin, a sheet member made of polytetrafluoroethylene resin having a thickness of about 80 μm may be used as such a buffer material. on the other hand,
Each electrode 3 of silicon wafer 32 and interposer 31
In order to concentrate the pressure on the 2a and 31a, a stainless steel plate is preferably used.
【００６６】また、上記実施の形態においては、加圧流
体として不活性ガス等の気体を用いたが、例えば、シリ
コーン油等の液状の物質を用いることも可能である。In the above embodiment, a gas such as an inert gas is used as the pressurized fluid, but a liquid substance such as silicone oil may be used.
【００６７】さらに、本発明はウェハサイズのＣＳＰ接
続体を製造する場合のみならず、種々の電子部品接続体
を製造する場合に適用しうるものであるが、本発明はウ
ェハサイズのＣＳＰ接続体を製造する場合に最も効果を
奏するものである。Further, the present invention is applicable not only to a case where a wafer-sized CSP connector is manufactured but also to a case where various electronic component connectors are manufactured. This is most effective in the production of
【００６８】[0068]
【発明の効果】以上述べたように本発明によれば、面積
の大きな電子部品に対し、均一な状態で加圧及び加熱を
行うことによって導通信頼性の高い電子部品接続体を製
造することができる。As described above, according to the present invention, it is possible to manufacture an electronic component connector having high conduction reliability by applying pressure and heating to an electronic component having a large area in a uniform state. it can.
【図１】本発明の電子部品接続体製造装置の一例の概略
構成図である。FIG. 1 is a schematic configuration diagram of an example of an electronic component connector manufacturing apparatus according to the present invention.
【図２】本発明の電子部品接続体の製造方法の熱圧着工
程を示す説明図である。 （ａ）：密閉手段を装着する工程を示す図（その１） （ｂ）：密閉手段を装着する工程を示す図（その２） （ｃ）：加熱空間内を真空排気する工程を示す図 （ｄ）：加圧空間内の圧縮ガスを圧縮する工程を示す図FIG. 2 is an explanatory view showing a thermocompression bonding step of the method for manufacturing an electronic component connector according to the present invention. (A): A diagram showing the step of attaching the sealing means (No. 1) (b): A diagram showing the process of attaching the sealing means (No. 2) (c): A diagram showing the step of evacuating the heating space ( d): Diagram showing the step of compressing the compressed gas in the pressurized space
【図３】（ａ）：従来のボンディングツールを用いて熱
圧着する方法を説明する図である。 （ｂ）：従来のオートクレーブを用いて熱圧着する方法
を説明する図である。FIG. 3A is a view for explaining a method of thermocompression bonding using a conventional bonding tool. (B): It is a figure explaining the method of thermocompression bonding using the conventional autoclave.
１ 電子部品接続体製造装置 ２ 熱圧着容器 ３ シリンダ ４ 基台 ６ ピストン（加圧手段） １０ 加熱ヒータ（発熱体、加熱手段） ２０ 密閉手段 ２２ シート部材（密閉部材） ３０ 仮接続体（電子部品組立体） ３１ インターポーザ（電子部品） ３２ シリコンウェハ（電子部品） ３３ 絶縁性接着フィルム（接着剤） ５１ 真空ポンプ（真空排気手段） Ｇ 圧縮ガス（加圧流体） Ｓ 熱圧着空間 Ｓ1 加圧空間 Ｓ2 加熱空間DESCRIPTION OF SYMBOLS 1 Electronic component connection body manufacturing apparatus 2 Thermocompression bonding container 3 Cylinder 4 Base 6 Piston (pressurizing means) 10 Heater (heating element, heating means) 20 Sealing means 22 Sheet member (sealing member) 30 Temporary connection body (Electronic component Assembly) 31 Interposer (Electronic component) 32 Silicon wafer (Electronic component) 33 Insulating adhesive film (Adhesive) 51 Vacuum pump (Evacuation means) G Compressed gas (Pressurized fluid) S Thermocompression space S 1 Pressurized space S 2 heating space
Claims (6)
接続することによって電子部品接続体を製造する方法で
あって、 接着剤を用いて接合された電子部品組立体を密閉された
熱圧着空間に配し、 上記電子部品組立体を発熱体に接触させながら加圧流体
を用いて該発熱体に全面的に押圧することにより上記電
子部品同士を電気的に接続する工程を有することを特徴
とする電子部品接続体の製造方法。1. A method for manufacturing an electronic component connection body by electrically connecting electronic components having microelectrodes, wherein the electronic component assembly joined by using an adhesive is hermetically sealed by thermocompression bonding. A step of arranging the electronic components in a space and electrically connecting the electronic components to each other by pressing the electronic component assembly entirely against the heating element using a pressurized fluid while contacting the electronic component assembly with the heating element. Manufacturing method of an electronic component connector.
に当該熱圧着空間の容積を縮小することにより上記加圧
流体を圧縮する工程を有することを特徴とする請求項１
記載の電子部品接続体の製造方法。2. The method according to claim 1, further comprising the step of compressing the pressurized fluid by introducing a pressurized fluid into the thermocompression bonding space and then reducing the volume of the thermocompression bonding space.
A method for manufacturing the electronic component connector according to the above.
立体を密閉された加熱空間に配置し、該加熱空間内を真
空にすることにより上記電子部品組体を上記発熱体に押
圧する工程を有することを特徴とする請求項１又は２の
いずれか１項記載の電子部品接続体の製造方法。3. A step of disposing the electronic component assembly in a closed heating space in the thermocompression bonding space, and pressing the electronic component assembly against the heating element by evacuating the heating space. The method for manufacturing an electronic component connector according to claim 1, wherein the method further comprises:
用いて接合された電子部品組立体に対し、上記電子部品
同士を電気的に接続することによって電子部品接続体を
製造する装置であって、 上記電子部品組立体を配置可能な熱圧着空間を有する熱
圧着容器と、 上記熱圧着容器の内部に設けられ、上記電子部品組立体
を全面的に接触した状態で加熱する加熱手段と、 上記熱圧着容器内の熱圧着空間を密閉状態に保ちつつ該
熱圧着空間内に導入された加圧流体を加圧する加圧手段
とを備えたことを特徴とする電子部品接続体製造装置。4. An apparatus for manufacturing an electronic component connector by electrically connecting said electronic components to an electronic component assembly joined by using an adhesive between electronic components having microelectrodes. A thermocompression bonding container having a thermocompression bonding space in which the electronic component assembly can be arranged; and heating means provided inside the thermocompression bonding container and configured to heat the electronic component assembly in full contact therewith. And a pressurizing means for pressurizing a pressurized fluid introduced into the thermocompression bonding space while keeping the thermocompression bonding space in the thermocompression bonding container in a sealed state.
て移動可能に配設されたピストン式の加圧機構であるこ
とを特徴とする請求項４記載の電子部品接続体製造装
置。5. An apparatus according to claim 4, wherein said pressurizing means is a piston-type pressurizing mechanism movably disposed in said thermocompression bonding container.
た加熱空間を上記熱圧着容器内に形成するための密閉手
段と、該加熱空間内の気体を真空排気するための真空排
気手段とを備えたことを特徴とする請求項４又は５のい
ずれか１項記載の電子部品接続体製造装置。6. A sealing means for forming a sealed heating space in which the electronic component assembly can be arranged and sealed in the thermocompression bonding container, and a vacuum exhaust means for evacuating gas in the heating space. The electronic component connector manufacturing apparatus according to claim 4, further comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36905698A JP3381781B2 (en) | 1998-12-25 | 1998-12-25 | Method of manufacturing electronic component connection body and manufacturing apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36905698A JP3381781B2 (en) | 1998-12-25 | 1998-12-25 | Method of manufacturing electronic component connection body and manufacturing apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000195903A true JP2000195903A (en) | 2000-07-14 |
| JP3381781B2 JP3381781B2 (en) | 2003-03-04 |
Family
ID=18493453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36905698A Expired - Fee Related JP3381781B2 (en) | 1998-12-25 | 1998-12-25 | Method of manufacturing electronic component connection body and manufacturing apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3381781B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001020661A1 (en) * | 1999-09-10 | 2001-03-22 | Nitto Denko Corporation | Semiconductor wafer with anisotropic conductor film, and method of manufacture thereof |
| JP2009021559A (en) * | 2007-06-12 | 2009-01-29 | Nippon Dempa Kogyo Co Ltd | Electronic component and manufacturing method thereof |
| WO2013102534A1 (en) * | 2012-01-03 | 2013-07-11 | Robert Bosch Gmbh | Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body |
| KR20150036254A (en) | 2012-06-29 | 2015-04-07 | 토레이 엔지니어링 컴퍼니, 리미티드 | Crimping device and crimping method |
| KR20220035585A (en) * | 2020-09-14 | 2022-03-22 | 주식회사 와이제이 더블유 | Sublimation printing device |
-
1998
- 1998-12-25 JP JP36905698A patent/JP3381781B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001020661A1 (en) * | 1999-09-10 | 2001-03-22 | Nitto Denko Corporation | Semiconductor wafer with anisotropic conductor film, and method of manufacture thereof |
| US6613608B1 (en) | 1999-09-10 | 2003-09-02 | Nitto Denko Corporation | Semiconductor wafer with anisotropic conductor film, and method of manufacture thereof |
| JP2009021559A (en) * | 2007-06-12 | 2009-01-29 | Nippon Dempa Kogyo Co Ltd | Electronic component and manufacturing method thereof |
| WO2013102534A1 (en) * | 2012-01-03 | 2013-07-11 | Robert Bosch Gmbh | Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body |
| KR20150036254A (en) | 2012-06-29 | 2015-04-07 | 토레이 엔지니어링 컴퍼니, 리미티드 | Crimping device and crimping method |
| KR20220035585A (en) * | 2020-09-14 | 2022-03-22 | 주식회사 와이제이 더블유 | Sublimation printing device |
| KR102406920B1 (en) * | 2020-09-14 | 2022-06-10 | 주식회사 와이제이 더블유 | Sublimation printing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3381781B2 (en) | 2003-03-04 |
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