JP2000193432A - Measuring method with image recognition and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a measuring device with image recognition which allows simultaneous measurement in 2-dimension-3-dimension of a silicon wafer bump with a simple equipment configuration at low cost and high speed. SOLUTION: A laser beam is projected from a projection device 2 such as a laser projector, and a camera of an imaging device 3 is so set that a wafer mirror-surface reflection light and the optical axis of camera of the imaging device 2 are parallel, allowing imaging of a wafer projection beam and solder projection beam. An offset (a) of a older projection beam from a wafer projection beam (reference beam) imaged with the camera of imaging device 3 is acquired, and a solder height is acquired from h=a*sinθ/cos(90 deg.-2θ). Here, if it is difficult to image the solder projection beam and wafer projection beam under the same imaging condition at the same time for thinner lines, imaging conditions are changed for time-difference imaging. By changing lighting condition of a lighting device 1 and brightness condition of the projecting device 2 and imaging device 3, etc., a very thin line of the solder projection beam and wafer projection beam is individually acquired for higher precision.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a two-dimensional object such as a bump of a silicon wafer, etc., in a relatively short time and with high accuracy by using an inexpensive and simple laser projector or the like and picking up an image with a CCD camera or the like. The present invention relates to a measurement device capable of performing three-dimensional measurement.

[0002]

2. Description of the Related Art Conventionally, cream solder printing is mainly inspected by two-dimensional inspection in which solder area is measured and the quality of solder printing (displacement, dripping, blurring, blurring, no solder, bridge) is determined from the solder area. Met. However, with the increase in the density and fine pitch of board mounting, insufficient soldering / excessive printing defects can easily lead to unsoldering (open) / bridge (short) defects in the post-process after reflow. Therefore, the need for a three-dimensional inspection for inspecting a solder shortage / excess based on a solder height has increased.

For example, the height of the cream solder is determined by the thickness of the mask screen and is on the order of 100 μm.
A typical device for high-precision height measurement that can cope with this is a laser displacement meter (triangulation, confocal method). The laser displacement meter has a resolution of 0.1 μm and a repetition accuracy of 1 μm
Of the order of magnitude and is suitable for fine solder height measurement.

As a three-dimensional laser measurement method, there is a laser projector in addition to a laser displacement meter. FIG. 9 shows the measurement principle, and FIG. 10 shows an example of a captured image. The laser projector projects a laser slit beam from a slant (angle θ) onto a three-dimensional measurement object on the object surface such as a resist, and captures a solder cutting line (solder projection line) with a CCD camera directly above. Then, an offset a with respect to the reflected light (laser reference line) from the object surface (resist) is obtained, and the height is converted (h = a * tan θ) from the offset a.
The resolution is about 20 μm, and the accuracy is lower than that of the laser displacement meter, but has the following advantages.

The measurement time is relatively short because the laser slit light is imaged by the CCD camera.

[0006] Since the CCD camera is arranged directly above, it can be used for both two-dimensional inspection and three-dimensional inspection.

[0007] Relatively low cost.

As described above, since the laser projector has a simple and inexpensive device configuration, it has come to be used for three-dimensional inspection of cream solder printing on printed circuit boards, component mounting, and solder fillets after reflow. .

[0009]

However, the above laser displacement meter has a relatively high-cost equipment configuration dedicated to three-dimensional inspection, which requires a long time for laser scanning and a long measurement time. Specular reflection type /
Since there is a problem that it is necessary to use the diffuse reflection type properly, it cannot be said that it is always suitable for in-line inspection.

On the other hand, in a laser projector, as shown in FIG. 10, the solder projection line is diffuse reflection light of high luminance, and the projection line is dispersed and the line width is widened. This leads to a reduction in resolution and measurement accuracy. Therefore, it is necessary to reduce the thickness of the solder projection line by optimizing various imaging conditions.
However, the optimal imaging condition for the solder projection line can be a disadvantageous imaging condition for the laser reference line. Therefore, it was necessary to solve the following problems.

(Problem 1) By optimizing various imaging conditions,
Along with the high-resolution laser reference line, the solder projection line, which is a high-brightness scattered light, is thinned to obtain a high-resolution projection line.
Improve measurement accuracy. The imaging conditions include lighting conditions, laser light output, camera light receiving conditions, and the like.

Also, CSP (chip size package)
The need for three-dimensional inspection of CSP bump solder on silicon wafers has increased with the spread of silicon wafers. However, when a laser projector is applied to the measurement of CSP bump solder height on silicon wafers, as shown in FIG. However, since the laser beam is specularly reflected (total reflection) on the silicon wafer, there is a problem that the laser beam cannot be observed at all from the camera immediately above. To find the solder height on the silicon wafer, see FIG.
As shown in, it is essential to determine the laser reference line (wafer projection line) on the silicon wafer reference plane, which is the reference for measuring the offset a of the laser beam cutting line (solder projection line) of the solder. is there. Therefore, when the laser projector is applied to the measurement of the CSP bump solder height of a silicon wafer, the following problems have to be solved.

(Problem 2) A mirror reference light is captured by a camera together with a wafer projection line on a silicon wafer to determine a laser reference line, thereby enabling three-dimensional measurement of a CSP bump or the like on a silicon wafer or the like.

(Problem 3) When solving the problem 1 together with the problem 1 or 2, the high-resolution laser reference line and the solder projection line are extracted at a relatively high speed, and the measurement time is relatively short. Laser projector.

In short, an object of the present invention is to provide a low-cost and simple device configuration using a laser projector or the like,
A measurement method and apparatus capable of performing two-dimensional / three-dimensional measurement of solder height and area of a CSP bump or the like on a printed circuit board or a silicon wafer in a relatively short time and with high accuracy by imaging with a D camera or the like. To provide.

[0016]

The present invention solves the above-mentioned problems by the means listed below.

One means is a laser projection step of obliquely projecting a laser pattern light, which is a convergent pattern light, onto an object surface and a measurement object on the object surface, and the object surface of the projected laser pattern light The imaging stage of imaging the reflected light from the object from immediately above, and image recognition of the reflected light from the imaged object surface and the reflected light from the measurement object, the 3
In a measurement method for performing dimension measurement, the laser projection step and the imaging step are performed under imaging conditions suitable for imaging reflected light from the object surface, and the imaging method is suitable for imaging reflected light from a measurement target on the object surface. In the imaging condition, the laser projection stage and the imaging stage,
A measurement method using image recognition, wherein the measurement is performed in the order described above or the reverse order, and then the measurement step is performed.

Alternatively, a laser projection step of obliquely projecting a laser pattern light, which is a convergent pattern light, onto a mirror surface or an object surface similar to the mirror surface and an object to be measured on the mirror surface or on the object surface, Obliquely image the reflected light from the mirror surface or the object surface and the reflected light from the measurement object along the optical axis of the reflected light from the mirror surface or the object surface of the pattern light or the optical axis in the vicinity thereof. And a measurement step of performing three-dimensional measurement of the measurement target by image recognition of the reflected light from the mirror surface or the object surface and the reflected light from the measurement target. This is a measurement method using image recognition as a feature.

Alternatively, in the above-described measurement method using image recognition, a laser projection step and an imaging step are performed under imaging conditions suitable for imaging reflected light from a mirror surface or an object surface similar to a mirror surface. Performing the laser projection step and the imaging step under imaging conditions suitable for imaging the measurement target in the above order or the reverse order,
This is a measuring method based on image recognition, characterized by executing a measuring step.

Alternatively, before or after the above-described measurement method using image recognition, a step of photographing the contour of the measurement object under imaging conditions suitable for capturing the contour of the measurement object; A measurement step of performing two-dimensional measurement of the measurement object by image recognition of the contour shape of the object.

Alternatively, a laser beam projecting means for obliquely projecting the laser pattern beam, which is a convergent pattern beam, onto the object surface and the object to be measured on the mirror surface or on the object surface; Imaging means for imaging the reflected light from the object surface and the reflected light from the measurement object from directly above,
Processing means for performing three-dimensional measurement of the object to be measured by image recognition of the reflected light from the mirror surface or the object surface and the reflected light from the object to be measured; The imaging means is a measuring apparatus based on image recognition, characterized in that images of reflected light from the object surface and reflected light from the object to be measured are time-lagged under imaging conditions suitable for each of the images. is there.

Alternatively, laser beam projecting means for obliquely projecting a laser pattern beam, which is a convergent pattern beam, onto a mirror surface or an object surface similar to the mirror surface and an object to be measured on the mirror surface or on the object surface, The optical axis of the reflected light from the mirror surface or the object surface of the laser pattern light, or the reflected light from the mirror surface or the object surface and the reflected light from the object to be measured obliquely along the optical axis in the vicinity thereof. An imaging unit for imaging, and a processing unit for performing three-dimensional measurement of the measurement target by image recognition of the reflected light from the mirror surface or the object surface and the reflection light from the measurement target. This is a measuring device based on image recognition.

Alternatively, in the above-described measuring apparatus based on image recognition, an illumination unit for the measurement object is provided, and the processing unit performs image recognition of the measurement object captured by the imaging unit together with the three-dimensional measurement. This is a measurement device based on image recognition, which performs two-dimensional measurement.

[0024] Alternatively, the imaging means is configured to take images of the reflected light from the mirror surface or the object surface and the image of the reflected light from the measurement object in a time-shifted manner under imaging conditions suitable for each. It is a measuring device by image recognition.

[0025] Alternatively, the imaging means captures an image of the reflected light from the mirror surface or the object surface, an image of the reflected light from the object to be measured, and an image in the two-dimensional measurement in a time-shifted manner under imaging conditions suitable for each. This is a measuring device by image recognition characterized by the following.

Alternatively, the processing means is a measuring apparatus based on image recognition, wherein the processing means automatically controls the control of the time difference imaging and the switching of the imaging condition in the time difference imaging.

In the present invention, the reflected light from the object surface and the solder bumps or the like on the object surface and the image at the time of two-dimensional measurement are imaged at different times, and the images are imaged under optimum imaging conditions at the time of each imaging, respectively. The present invention solves the first problem of the present invention by thinning and clarifying the reflected light, enabling high-precision measurement.

Further, the reflected light of the laser pattern light such as the laser slit projection light specularly reflected on the silicon wafer is
By imaging with a CCD camera or the like having the same optical axis as the reflected light, the laser reference line is determined, and the laser projection light on the silicon wafer bump etc. is also imaged at the same time, and image processing such as offset measurement is performed. By converting to the above, it is possible to apply an inexpensive laser projector or the like to three-dimensional measurement of silicon wafer bumps, and solve the problem 2 of the present invention.

Further, the third problem of the present invention is solved by automatically and instantaneously switching the imaging conditions in the above-described time-lag imaging.

[0030]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a configuration diagram for explaining a first embodiment of the present invention. The present embodiment shows an example in which a time difference photographing is performed in a conventional measuring device using the laser projector of FIG.

This embodiment is directed to a lighting device 1 such as an LED.
A projection device (such as a laser pattern projector) 2 that projects a laser pattern, which is a convergent pattern light, from an oblique direction onto a measurement object (eg, cream solder) on an object surface (eg, a printed circuit board resist); An image pickup device (CCD camera, image input board, etc.) 3 that is arranged just above the measurement target and captures images of the object surface and the measurement target by time-lapse photography, and a storage device (image memory, memory) for storing the captured image , Hard disk etc.) 4,
The stored image is read out and two-dimensional /
It comprises a processing device (CPU) 5 containing processing software for performing three-dimensional measurement and a display device (display) 6 for displaying images and measurement results.

FIG. 2 is a flowchart showing the procedure of measurement in this embodiment.

As described above, when the cream solder of the diffuse reflector is printed on the resist, when the laser slit light is projected from the projection device 2, the diffused reflected light of the solder (solder projected line) is obtained from the camera immediately above. Can be clearly imaged, but the line width is widened due to the diffused light, while the reflected light (laser reference line) from the resist has a small light amount and cannot be clearly imaged. Therefore, in order to improve the accuracy, if the solder projection line is to be thinned, the laser reference line may not be imaged, and if the laser reference line is clearly imaged, highly accurate measurement may not be possible. There is.

Therefore, in the present embodiment, separately from the step of imaging the laser reference line, in order to thin the solder projection line, the light amount of the high-brightness dispersed light is adjusted (light output, received light amount). Problem 1 of the present invention is solved by providing a stage for optimizing the conditions and performing time-lag imaging. For example, to specifically optimize the imaging conditions, adjustment of the output of laser light, adjustment of the amount of received light by adjusting the illumination brightness and camera aperture, adjusting the camera shutter speed, selecting the level of step illumination, etc. Do.

In the step of imaging the laser reference line, the adjustment is similarly performed so that the variance is minimized and the contrast is maximized, and the imaging conditions are optimized.

In FIG. 2, following imaging of the laser reference line,
Although the example in which the imaging of the solder projection line is performed has been described, the order may be reversed.

The captured images are sequentially stored in the storage device 4, and the CPU 5 reads them out and converts the offset a of the solder projection line from the laser reference line into a height in accordance with the measurement principle described with reference to FIG. To perform three-dimensional measurement.

The laser output is turned off before or after the series of processing for the time difference imaging and the three-dimensional measurement, and illumination conditions such as an LED or other illumination device 1 for obtaining a contrast between the resist and the solder, or a camera. It is also possible to add a step of adjusting the imaging conditions such as the light receiving conditions and the shutter speed and imaging the outline shape of the solder and a step of performing two-dimensional measurement for obtaining an area and the like by image processing in the CPU 5. . Based on the results of both measurements, it is also possible to measure the volume of the solder and the like.

Further, for the laser reference line and the solder projection line or the image for two-dimensional measurement under different optimum imaging conditions shown in FIG. Thus, it is possible to solve the third problem of the present invention in that the characteristic of the laser projector that the measurement time is short is maintained. For example, specifically, automatic switching of a laser light output level, an illumination luminance level of an LED or the like, an LED step illumination, an electronic shutter speed, and the like are performed. For this purpose, an illumination device 1, a projection device 2, and an imaging device 3 that can be controlled and adjusted by a command from the CPU 5 are used.

FIG. 3 is a block diagram illustrating a second embodiment of the present invention.

This embodiment is directed to a lighting device 1 such as an LED.
A projection device (such as a laser pattern projector) 2 for projecting a laser pattern, which is convergent pattern light, from an oblique direction onto a measurement target (for example, a CSP bump) on an object surface (for example, a silicon wafer); and an optical axis of a camera An imaging device (CCD camera, image input board, etc.) 3 which is arranged parallel to the optical axis of the specular reflected light of the laser light of the measurement object on the object surface and captures the images of the object surface and the measurement object by time-lapse photography
And a storage device (image memory,
Memory, hard disk, etc.) 4, a processing device (CPU) 5 having built-in processing software for reading stored images and performing two-dimensional / three-dimensional measurement by image processing, and a display device (display) for displaying images and measurement results ) 6.

4 and 5 show examples of the object to be measured in this embodiment. In the present embodiment, a case will be described in which it is possible to measure the height / cross-section of CSP bumps printed with cream solder on CSPs arranged in an array on a silicon wafer.

As shown in FIG. 5A, the CSP bumps are printed on a silicon wafer as a pattern arranged in a grid pattern. As described above, since the cream solder bumps of the diffuse reflector are printed on the silicon wafer of the specular reflection surface, when the laser slit light is projected from the projection device 2, as shown in FIG. Can image the diffuse reflection light of the solder, but cannot image the mirror reflection light of the wafer.

Therefore, in this embodiment, as shown in FIG. 6, the camera of the image pickup device 3 is first set so that the specular reflected light and the optical axis of the camera of the image pickup device 3 are parallel to each other. Enables projection lines to be imaged. The wafer projection line becomes a laser reference line on the wafer reference plane, and becomes a reference line for measuring the offset of the solder projection line. The captured image including the wafer projection line and the solder projection line is stored in the storage device 4.

FIG. 7 shows an example of measurement of the laser reference line and the solder projection line. The solder projection line appears as an offset a proportional to the solder height by optically cutting the solder bump.

FIG. 8 shows the principle of measurement in the present invention.
Assuming that the projection angle of the laser slit light from the projection device 2 is θ and the offset of the solder projection line from the laser reference line imaged by the camera of the imaging device 3 is a, the solder height h is given by the following equation.

H = a * sin θ / cos (90 ° −2θ) In particular, when θ = 45 °, h = a / √2 The CPU 5 terminates imaging and stores the image in the storage device 4. The image is read out and based on the above formula, 3
Perform dimension measurement. The projection angle θ or the like of the laser slit light is input in advance or read by providing a detector.

When the solder area determined from the outline of the solder image is s', the actual solder area s is given by the following equation, and two-dimensional measurement can be performed simultaneously with three-dimensional measurement.

S = s' * cos (90 ° -2θ) In measuring the solder height, the laser projection line (wafer projection line, laser reference line) and the solder projection line are made as thin as possible to increase the resolution. Measurement accuracy must be improved. By the way, the diffuse reflection solder projection line has high luminance but wide line width due to dispersion of the projection line. On the other hand, the brightness of the mirror projection wafer projection line is reduced due to the fluctuation of the light receiving angle, and the line width is narrow (see FIG. 7). Therefore, when it is difficult to simultaneously image the solder projection line and the wafer projection line under the same imaging condition in order to achieve the thinning, similarly to FIG. 2, the solder projection line and the wafer projection line as the laser reference line are set. Time-lapse imaging is performed under different imaging conditions. As the imaging conditions, the illumination conditions of the illumination device 1, the projection device (eg, a laser projector)
2. By changing the luminance condition and the like of the imaging device 3, it is possible to individually obtain extra fine lines of the solder projection line and the wafer projection line. Also, when it is necessary to change the imaging conditions when performing a two-dimensional inspection of an area or the like, the imaging can be performed by time-lapse photography in which the imaging conditions are optimally changed.

As described above, the imaging device in which the laser slit light is projected from the projection device (laser projector) 2 onto the silicon wafer, and the laser slit reflected light that has been specularly reflected is set along the optical axis of the reflected light. The second object of the present invention is solved by extracting the laser reference line on the wafer reference plane and performing positioning by imaging with the CCD camera of No. 3.

Theoretically, for specular reflection, the projection angle θ1 of the laser projector = the optical axis tilt angle θ2 = θ of the CCD camera
However, in practice, both angles are adjusted so that the laser reference line has the minimum dispersion and the maximum contrast.

Further, as described above, in order to thin the solder projection line, the light amount of the high-luminance dispersed light (light output, light output,
By optimizing the imaging conditions for performing the (light reception amount) and performing the time-lag imaging, the second problem of the present invention is also solved in the present embodiment. For example, to specifically optimize the imaging conditions, adjustment of the output of laser light, adjustment of the amount of received light by adjusting the illumination brightness and camera aperture, adjusting the camera shutter speed, selecting the level of step illumination, etc. Do.

The laser reference line is similarly adjusted so that the variance is minimum and the contrast is maximum, and the imaging conditions are optimized.

In FIG. 2, following imaging of the laser reference line,
Although the example in which the imaging of the solder projection line is performed has been described, the order may be reversed.

The captured images are sequentially stored in the storage device 4, and the CPU 5 reads them out and converts the offset a of the solder projection line from the laser reference line into a height in accordance with the above-described measurement principle diagram. Perform three-dimensional measurement.

At the stage before or after the series of processing of the time difference imaging and the three-dimensional measurement, the laser output is turned off, and the illumination device 1 such as an LED or the like obtains the illumination conditions or the camera condition for obtaining the contrast between the wafer and the solder. Receiving conditions,
It is also possible to add a step of adjusting the imaging conditions such as the shutter speed to image the outline shape of the solder and a step of performing two-dimensional measurement for obtaining an area or the like by image processing in the CPU 5. Based on the results of both measurements, it is also possible to measure the volume of the solder and the like.

Further, for the wafer projection line and the solder projection line having different optimal imaging conditions, or imaging for two-dimensional measurement, time difference imaging by automatic switching of imaging conditions is performed by the CPU 5.
By performing the above control, the problem 3 of the present invention is solved. For example, specifically, laser light output level, LED
The automatic switching of the illumination brightness level, the LED step illumination, the electronic shutter speed, and the like is performed. For this purpose, an illumination device 1, a projection device 2, and an imaging device 3 that can be controlled and adjusted by a command from the CPU 5 are used.

In the second embodiment, the case of measuring and inspecting the height / cross section of the CSP bump on the silicon wafer has been described as an example.
P (quad flat package) array, BGA
(Ball grid array) It can be widely applied to two-dimensional and three-dimensional simultaneous measurement, such as measurement and inspection of solder height / cross section of bumps, component mounting inspection, and appearance inspection of solder fillets and the like.

For example, a QFP / BGA package and various chip components are mounted on a printed circuit board (PCB). In the cream solder printing process, QFP array solder, BGA bump solder, and chip pad solder are printed corresponding to the QFP pin array, BGA ball grid, and chip component pins. With the increase in the density of board mounting and the finer pitch of package pins, it is necessary to control the height and volume of solder by inspecting for insufficient / excessive solder. Solder printed circuit boards are composed of high-reflectivity solder and low-reflectivity substrate resist.When measuring optical systems, it is difficult to observe the substrate resist with a camera directly above, It may be difficult to observe the substrate resist simultaneously.
In three-dimensional measurement by a laser projector, the solder projection light (solder light cutting line) has high luminance, and the resist projection light (laser reference line) has low luminance, and it may be difficult to simultaneously image under the same imaging conditions. . Similarly to the silicon wafer described above, the laser projection line projected on the substrate resist in an oblique direction is imaged, and the solder projection line and the laser projection line are staggered by changing the imaging conditions to obtain a time difference between the solder projection line and the laser projection line. A clear image can be obtained.

[0061]

As is apparent from the above description, according to the present invention, a silicon wafer or a printed circuit board (PCB) can be manufactured in a short cycle time with a simple and inexpensive device configuration.
2D / 3D measurement of the upper solder can be performed.
In particular, a low-cost laser projector can be applied to highly accurate three-dimensional measurement.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a flowchart showing a measurement procedure according to the first embodiment.

FIG. 3 is a configuration diagram showing a second embodiment of the present invention.

FIG. 4 is a diagram showing a CSP array on a silicon wafer as an example of a measurement object of the second embodiment.

FIGS. 5A and 5B are diagrams illustrating an inspection frame and laser slit light projection in an example of a measurement target (CSP bump) according to the second embodiment.

FIG. 6 is a diagram illustrating an arrangement of a projection device and an imaging device according to the second embodiment.

FIG. 7 is a diagram illustrating imaging of mirror-reflected light of a laser projection light on a silicon wafer in the second embodiment.

FIG. 8 is a diagram illustrating the principle of three-dimensional measurement in the second embodiment.

FIG. 9 is a diagram illustrating the principle of three-dimensional measurement by a conventional laser projector.

FIG. 10 is a diagram illustrating an example of a captured image in dimension measurement by a conventional laser projector.

FIG. 11 is a diagram illustrating a problem of three-dimensional measurement by a conventional laser projector.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Illumination device 2 ... Projection device 3 ... Imaging device 4 ... Storage device 5 ... Processing device (CPU) 6 ... Display device

 ──────────────────────────────────────────────────続 き Continuing on the front page F term (reference) 2F065 AA24 AA53 AA54 AA58 BB02 CC01 CC19 CC26 FF01 FF07 GG04 GG07 HH02 HH05 HH12 HH13 JJ03 JJ08 JJ09 JJ26 NN02 NN03 PP23 QQ24 QQ31 2G0511 AA01 CB01 EB02 4M106 AA01 AD09 BA05 CA48 CA70 DB04 DB08 DB19 DH60 5B057 AA03 BA15 DA07 DB02 DB03 DC02 DC09

Claims (10)

[Claims] 1. A laser projecting step of obliquely projecting a laser pattern light, which is a convergent pattern light, onto an object surface and a measurement target on the object surface, and reflecting the projected laser pattern light from the object surface. A measuring method of performing three-dimensional measurement of the measurement target by imaging an image of the light from directly above, and performing image recognition of the reflected light from the imaged object surface and the reflected light from the measurement target; The laser projection step and the imaging step under imaging conditions suitable for imaging reflected light from the laser projection step and the imaging step under imaging conditions suitable for imaging reflected light from a measurement object on the object surface And (c) in the order described above or in the reverse order, and then performing the measurement step. 2. A laser projection step of obliquely projecting a laser pattern light, which is a convergent pattern light, onto a mirror surface or an object surface similar to a mirror surface and a measurement object on the mirror surface or on the object surface, and the projected laser beam. Obliquely image the reflected light from the mirror surface or the object surface and the reflected light from the measurement object along the optical axis of the reflected light from the mirror surface or the object surface of the pattern light or the optical axis in the vicinity thereof. And a measurement step of performing three-dimensional measurement of the measurement object by image recognition of the reflected light from the mirror surface or the object surface and the reflected light from the measurement object. Characteristic measurement method by image recognition. 3. The measuring method according to claim 2, wherein a laser projection step and an imaging step are performed under imaging conditions suitable for imaging reflected light from a mirror surface or an object surface equivalent to the mirror surface, and the mirror surface or the mirror surface is used. Performing the laser projection step and the imaging step in an imaging condition suitable for imaging the measurement target on the object plane in the order described above or the reverse order, and then performing the measurement step. Measurement method using image recognition. 4. A method according to claim 1, wherein the contour of the measurement object is acquired under an imaging condition suitable for imaging the contour shape of the measurement object. A measurement method using image recognition, comprising: a step of capturing a shape; and a measurement step of performing two-dimensional measurement of the measurement object by image recognition of the captured contour shape of the measurement object. 5. A laser beam projecting means for projecting a laser pattern beam, which is a convergent pattern beam, obliquely onto an object surface and an object to be measured on the mirror surface or on the object surface; Imaging means for imaging the reflected light from the object surface and the reflected light from the object to be measured from directly above, and image recognition of the imaged reflected light from the mirror surface or the object surface and the reflected light from the object to be measured And a processing unit for performing three-dimensional measurement of the measurement target, wherein the measurement unit by image recognition includes: an imaging unit configured to generate an image of reflected light from the object surface and an image of reflected light from the measurement target; A measurement apparatus using image recognition, wherein time-lapse imaging is performed under imaging conditions adapted to the respective conditions. 6. A laser beam projecting means for obliquely projecting a laser pattern beam, which is a convergent pattern beam, onto a mirror surface or an object surface similar to a mirror surface and a measurement object on the mirror surface or on the object surface. The optical axis of the reflected light from the mirror surface or the object surface of the laser pattern light, or the reflected light from the mirror surface or the object surface and the reflected light from the object to be measured obliquely along the optical axis in the vicinity thereof. Imaging means for taking an image, and processing means for performing three-dimensional measurement of the measurement object by image recognition of the reflected light from the mirror surface or the object surface and the reflected light from the measurement object. A measuring device based on image recognition, characterized in that: 7. The measurement apparatus according to claim 5, further comprising: an illumination unit configured to illuminate the measurement target, wherein the processing unit performs the three-dimensional measurement together with the measurement target captured by the imaging unit. A two-dimensional measurement device for performing two-dimensional measurement by image recognition. 8. The imaging unit is characterized in that images of the reflected light from the mirror surface or the object surface and the reflected light from the object to be measured are staggered under imaging conditions suitable for each. A measuring device by image recognition according to claim 6. 9. The image capturing means captures an image of reflected light from the mirror surface or object surface and an image of reflected light from the object to be measured, and an image in the two-dimensional measurement in a time-shifted manner under imaging conditions adapted to the respective conditions. The measuring device according to claim 7, wherein: 10. The apparatus according to claim 5, wherein the processing means automatically controls the control of the time-lapse imaging and switching of imaging conditions in the time-lapse imaging.
10. A measuring device by image recognition according to any one of 8 and 9.