JP2000188501A - Semiconductor switch - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor switch that is inspected by using only a general-purpose RF probe at a reduced inspection cost because the RF probe is hardly defected. SOLUTION: A connection pad 9 acting as an RF input or output terminal is connected to a microstrip line 11 with a MIM capacitor 10 inbetween and a bypass line 12 to bypass the MIM capacitor 10 is formed and connected to the microstrip line 11. When an on-wafer check is finished, the bypass line 12 is cut off.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switch used for switching microwave and millimeter wave high frequency signals.

[0002]

2. Description of the Related Art Generally, a semiconductor switch is used for switching a high-frequency signal in a transmission module, a reception module or a transmission / reception module used for communication or radar in a microwave band and a millimeter wave band. As the semiconductor switch, a diode element such as a PIN diode or a Schottky diode or a transistor is used.
FIG. 18 shows one input and one output (SPST: Single Pole Sing).
FIG. 2 is a schematic block diagram showing a semiconductor switch of FIG. As can be seen from FIG.
0 is an input terminal RFin to which a high-frequency signal is input, an output terminal RFout to which a high-frequency signal input to the input terminal RFin is output, and a control DC voltage for performing switching control of the semiconductor switch 200 is applied. And a DC control terminal Din.

In systems for communication and radar, when the number of input / output channels increases, the semiconductor switch used in each of the above-mentioned modules and the like has three input channels as shown in FIG. Output or 3 outputs and 1 input (SP3T: Single Pole Thre)
e Throw) semiconductor switches are used. Furthermore, in the case of n (n is an integer) channel, an n-input 1-output or n-output 1-input (SPnT) semiconductor switch as shown in FIG. 20 is used.

On the other hand, there are two methods of inspecting a device forming a semiconductor switch: a method in which an inspection probe head is brought into contact with an input / output terminal of a device in a wafer state, and a method in which a semiconductor device is mounted on a package. Inspection in a wafer state is an effective method for reducing assembly costs of defective products and inspection costs. Also, for products shipped in bare chips, it is indispensable to carry out inspection in a wafer state. For inspection in such a wafer state, for example, in the case of the SP3T semiconductor switch 200a, as shown in FIG. 21, four RF terminals RF1 to RF4 for inputting or outputting a high-frequency signal, and a DC voltage for control Must be connected to the inspection device in total of three DC control terminals Din1 to Din3 to which is applied.

[0005] R used for switching high frequency signals
In an inspection apparatus for inspecting an F switch, particularly a millimeter wave band switch used for switching a millimeter wave band high frequency signal, as shown in FIG. 22, four waveguides for inputting or outputting a high frequency signal are used. Type probe head (hereinafter,
RF probes) 205a to 205d and three DC probes for control terminals (hereinafter, referred to as DC probes) 206a for applying a DC voltage for control to DC control terminals.
Inspection is performed in combination with. FIG. 22 shows an example in which the semiconductor switch 200a of FIG. 21 is inspected.

Next, an inspection method in an inspection apparatus using each probe shown in FIG. 22 will be described. FIG. 23 is a flowchart showing a semiconductor switch inspection operation in the inspection device using each probe of FIG. FIG.
In 3, the respective RF probes 205 a to 205 d and the respective DC probes 206 a to 206 c are installed and provisionally arranged, and then the semiconductor switch wafer is installed at a predetermined position. Next, the RF probes 205a to 205d and D
The C probes 206a to 206c are connected to predetermined connection pads on the wafer, and a predetermined inspection is performed. When the inspection is completed, if there is another wafer to be inspected, the wafer is replaced, the next wafer is placed at a predetermined position, and the same operation is performed. ,
This flow ends.

[0007]

However, as shown in FIG. 22, the RF probes 205a to 205d are arranged close to each other from four directions, and the DC probes 206a to 205d are further arranged.
Since the respective 206c are arranged close to each other between the RF probes, there is a problem that the expensive RF probes are likely to be in contact with each other and easily damaged. In addition, if custom products of RF probe and DC probe are developed for each product with different semiconductor switches, the inspection becomes easier, but the probe becomes less versatile and the probe becomes expensive,
Since it is necessary to develop a probe for each product, there is a problem that the cost of the product increases.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and it is possible to perform an inspection using only a general-purpose RF probe and to substantially eliminate damage to the RF probe. It is an object of the present invention to obtain a semiconductor switch capable of reducing inspection costs.

Although the purpose and structure are different from those of the present invention,
Japanese Patent Laying-Open No. 6-237122 discloses a configuration in which a capacitor is inserted into a transmission line so that on-wafer characteristics of a microwave semiconductor device can be measured quickly and accurately. Although the purpose and structure are different from those of the present invention,
Japanese Patent Application Publication No. 181188 discloses a semiconductor device in which after performing various tests for inspecting reliability, a fuse is used to cut and form a wiring connecting a pad and a buffer.

[0010]

SUMMARY OF THE INVENTION A semiconductor switch according to the present invention is a diode type semiconductor switch using a diode for switching a high frequency signal, comprising: an external connection electrode for transmitting a high frequency signal to the outside; A high-frequency signal line that connects the external connection electrode and the diode, and a bypass line that bypasses the high-frequency signal line DC cut element, provided with a DC cut element that cuts a DC component. When a predetermined test is performed on the external connection electrode, a DC bias voltage is externally applied to the diode, and the bypass line is disconnected after the predetermined test is completed.

[0011] The semiconductor switch according to the present invention includes:
Specifically, in the first aspect, the line length of the bypass line is set to １ ／ or less of the wavelength of the high-frequency signal.

Further, a semiconductor switch according to the present invention comprises:
In any one of the first and second aspects, the bypass line is formed when a part of the line is formed on a wafer outside the semiconductor chip and the semiconductor chip is cut and separated.

[0013] The semiconductor switch according to the present invention comprises:
4. The semiconductor device according to claim 3, wherein each of the bypass lines in each of the semiconductor switches formed adjacent to the wafer is connected to each other on a chip cutting region on the wafer when each semiconductor chip is cut and separated. The semiconductor chips are cut when the semiconductor chips are cut and separated in the chip cutting region.

Further, a semiconductor switch according to the present invention comprises:
In a diode-type semiconductor switch using a diode for switching of a high-frequency signal, when a predetermined inspection is performed, an inspection electrode to which a DC bias voltage is externally applied to the diode, and the inspection electrode and the diode are connected. A first signal line, a second signal line forming a coupling line with the first signal line, and an external connection electrode formed at one end of the second signal line for transmitting a high-frequency signal to the outside. It is provided with.

Further, a semiconductor switch according to the present invention comprises:
In a transistor-type semiconductor switch using a transistor for switching a high-frequency signal, an external connection electrode that transmits a high-frequency signal to the outside and a DC cut element that cuts a DC component of the signal are provided in the middle. A high-frequency signal line connecting the external connection electrode and the transistor, a control electrode to which a control signal for controlling the switching operation of the transistor is input from the outside, and an inspection connecting the external connection electrode and the control electrode When a predetermined test is performed on the external connection electrode, a DC bias voltage is externally applied to the transistor, and the test line is disconnected after the predetermined test is completed.

Further, a semiconductor switch according to the present invention comprises:
According to a sixth aspect of the present invention, the inspection line is formed such that a part of the line is formed on a wafer outside the semiconductor chip and is cut when the semiconductor chip is cut and separated.

Further, the semiconductor switch according to the present invention comprises:
8. The inspection line according to claim 7, wherein each inspection line in each semiconductor switch formed adjacent to the wafer is connected to each other on a chip cutting region on the wafer when each semiconductor chip is cut and separated. The semiconductor chips are cut when the semiconductor chips are cut and separated in the chip cutting region.

Further, the semiconductor switch according to the present invention comprises:
In a transistor type semiconductor switch using a transistor for switching a high frequency signal, an external connection electrode for transmitting a high frequency signal to the outside and a DC cut element for cutting a DC component of the signal are provided in the middle. A high-frequency signal line for connecting the connection electrode and the transistor, a control electrode for inputting a control signal for controlling the switching operation of the transistor from the outside, and an external connection electrode for performing a predetermined test. A test electrode to which a control voltage is externally applied to the transistor;
A transistor bias circuit provided between the test electrode and the control electrode, wherein the test electrode and the bias circuit are formed on a wafer outside the semiconductor chip, and cut and separate the semiconductor chip. It is separated at the time.

Further, the semiconductor switch according to the present invention comprises:
In any one of the first to ninth aspects, the external connection electrode forms an output electrode from which a high-frequency signal input from the outside is output according to a switching operation.

Further, the semiconductor switch according to the present invention comprises:
In any one of the first to ninth aspects, the external connection electrode forms an input electrode to which a high-frequency signal is input from the outside.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail based on an embodiment shown in the drawings. Embodiment 1 FIG. FIG. 1 is a schematic partial view showing an example of a semiconductor switch according to the first embodiment of the present invention.
2 is a diagram showing an equivalent circuit of the semiconductor switch shown in FIG.

In the semiconductor switch 1 shown in FIG. 1, electrodes 3 and 4 are formed on a semiconductor chip 2.
Are connected to an inspection pad 5 used for connection to an inspection device during an on-wafer inspection for inspecting the characteristics of the semiconductor switch 1 in a wafer state.
Are connected to an inspection pad 6 used to connect to an inspection apparatus at the time of on-wafer inspection.

The test pad 3 is grounded via a via hole 7, and the test pad 4 is grounded via a via hole 8. A connection pad 9 to which an external circuit is connected when the semiconductor switch 1 is used is formed between the test pads 5 and 6. A DC cut element, for example, MIM (Meta
(Insulator Metal) A microstrip line 11 provided with a capacitor 10 is connected.

The connection pad 9 is connected to a diode element via a microstrip line 11, and a bypass line 12 for bypassing the MIM capacitor 10 is connected to the microstrip line 11. Further, a control pad 13 to which a control DC voltage for controlling the switching operation of the semiconductor switch 1 is applied is formed, and a line 14 is connected to the control pad 13.

Here, as shown in FIG. 2, the semiconductor switch 1 is a diode type switch arranged in parallel. In FIG. 2, a semiconductor switch 1 includes an RF input terminal 21 to which a high-frequency signal is input, and an RF input terminal 2
1. An RF output terminal 22 from which a high-frequency signal input from 1 is output in accordance with a switching operation;
A DC control terminal 23 to which a voltage is applied. D
The C control terminal 23 is grounded via a capacitor 24, and is connected to an RF input terminal 2 via a (1/4) λ line 25.
1, connected to the RF output terminal 22 and the anode of a diode 26, the cathode of which is grounded. Here, λ indicates the wavelength of the high-frequency signal.

In such a configuration, the connection pad 9 shown in FIG. 1 is connected to the RF input terminal 21 or the RF output terminal 2 shown in FIG.
2 is shown, and the control pad 13 in FIG.
The C control terminal 23 is shown. In the semiconductor switch 1, during the on-wafer inspection, the RF output terminal 22
Control DC for controlling switching of semiconductor switch 1
Although it is possible to apply a voltage, it is necessary to externally configure a bias circuit.

For this reason, a waveguide type probe head (hereinafter referred to as an RF probe) for inputting or outputting a high-frequency signal from an inspection apparatus during on-wafer inspection is used.
At this time, a general-purpose RF probe with a built-in bias tee is used as the RF probe connected to the RF output terminal 22. Note that the connection portion with the RF probe in another connection pad (not shown) forming the RF input terminal 21 or the RF output terminal 22 is the same as that of the related art, and a description thereof will be omitted.

FIG. 3 shows three outputs and one input (hereinafter referred to as SP3) formed using the semiconductor switch 1 shown in FIGS.
FIG. 2 is a schematic block diagram showing a changeover switch 30 (referred to as T). In FIG. 3, R of each semiconductor switch 1
The F input terminals 21 are connected to each other to form an RF input terminal 31 of the changeover switch 30, and each of the semiconductor switches 1
The RF output terminal 22 of each of the switches 30
Output terminals 32 to 34 are provided. Further, the DC control terminal 23 of each semiconductor switch 1 forms each DC control terminal 35 to 37 of the changeover switch 30.

FIG. 4 shows the changeover switch 3 shown in FIG.
FIG. 4 is a diagram showing an example of the arrangement of RF probes for performing on-wafer inspection at 0, and RF probes 41a to 41d.
Are arranged at predetermined positions from four directions. FIG. 5 is a diagram showing an example of connection between one of the RF probes shown in FIG. 4 and each pad shown in FIG. FIG. 5 shows an example of connection between the RF probe 41a in FIG. 4 and the test pads 5, 6 and the connection pad 9 in FIG.

In FIG. 5, an RF probe 41a is a general-purpose RF probe with a built-in bias tee. During on-wafer inspection, of the three connection terminals of the RF probe 41a, each of the connection terminals located at both ends is connected to an inspection pad. 5
And the connection terminal corresponding to the inspection pad 6, and the connection terminal located at the center is connected to the connection pad 9.
RF probes 41a to 41d are arranged at predetermined positions,
When connection with a predetermined pad in the semiconductor switch 1 is completed, an on-wafer inspection is performed.

At the time of on-wafer inspection, the RF probe 41a
Applies a control DC voltage to the connection pad 9 and inputs a high-frequency signal from the connection pad 9 in accordance with the switching operation of the semiconductor switch 1. When the on-wafer inspection is completed, as shown in FIG.
Is cut by fusing by applying a current, cutting using a laser, or mechanical cutting. In addition, bypass line 1
A resistance element may be used for a part of 2.

On the other hand, the line length of the bypass line 12 needs to be selected within a range that does not affect the switching characteristics of the semiconductor switch 1. FIG. 7 is a diagram illustrating simulation results of the switching characteristics of the semiconductor switch 1 at the time of the line length L of the bypass line 12 and on-wafer inspection, and at the time of mounting after cutting the bypass line 12. FIG. 7 shows the relationship between the loss of the high-frequency signal due to the switching of the semiconductor switch 1 and the line length L of the bypass line 12 during the on-wafer inspection.
However, it can be seen that when L ≦ (１ ／) λ, the switching characteristics are not affected.

Next, an inspection method in an inspection apparatus using each probe shown in FIG. 4 will be described. FIG. 8 is a flowchart showing an example of a semiconductor switch inspection operation in the inspection apparatus using each probe of FIG.

In FIG. 8, in step S1, each of the RF probes 41a to 41d is set and provisionally arranged, and then in step S2, a semiconductor switch wafer is set in a predetermined position. Next, in step S3, R
The F probes 41a to 41d are connected to predetermined connection pads on the wafer, and a predetermined on-wafer inspection is performed in step S4. When the inspection is completed, if there is another wafer to be subjected to the on-wafer inspection, the wafer is replaced in step S5, and the process returns to step S2, where the next wafer is placed at a predetermined position and the same operation is performed. Will be After the processing in step S4, if there is no wafer to be inspected next, this flow ends.

FIG. 9 is a schematic partial view showing another example of the semiconductor switch according to the first embodiment of the present invention. In FIG. 9, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted, and only the differences from FIG. 1 will be described. 9 differs from FIG. 1 in that the wiring pattern of the bypass line 12 is different. The bypass line 12 in FIG. 1 is a bypass line 12a, and accordingly, the semiconductor switch 1 in FIG. And that

In FIG. 9, the microstrip line 1
1 is connected to a bypass line 12 a for bypassing the MIM capacitor 10. Bypass line 12
In a, a part of the line is wired outside the semiconductor switch 1 beyond a chip separation position 45 which is cut when the semiconductor chip 2 is separated. In this way, after the on-wafer inspection is completed, the bypass line 12a
It is not necessary to provide a step of cutting off the bypass line 12a when the semiconductor chip 2 is separated.

In the first embodiment, the case where a control DC voltage is applied from the RF output terminal 22 during on-wafer inspection has been described. However, the present invention is not limited to this. A control DC voltage may be applied. In this case, the connection pad 9 shown in FIG.
Indicates the RF input terminal 21 of FIG. A general-purpose RF probe with a built-in bias tee is used as the RF probe connected to the RF input terminal 21. Needless to say, in both the RF input terminal 21 and the RF output terminal 22, FIG.
Alternatively, a configuration similar to that of the connection pad 9 and its periphery as shown in FIG. 9 may be employed.

As described above, in the semiconductor switch according to the first embodiment of the present invention, in the diode-type semiconductor switch, the connection pad 9 forming the RF input terminal 21 or the RF output terminal 22 is provided, and the MIM capacitor 10 is provided in the middle. Connected to the microstrip line 11
The MIM capacitor 1 is connected to the microstrip line 11.
A bypass line for bypassing 0 is formed and connected, and when the on-wafer inspection is completed, the bypass line is disconnected.

Accordingly, in an on-wafer inspection performed when a semiconductor switch is manufactured, a DC voltage for control can be applied from either the RF input terminal or the RF output terminal using an RF probe, and Since a DC probe for a control terminal (hereinafter, referred to as a DC probe) used to apply a DC voltage can be eliminated, RF caused by contact between the DC probe and the RF probe can be eliminated.
The probe can be prevented from being damaged, and the DC probe can be eliminated or eliminated, and the arrangement of each probe becomes easy, so that the inspection cost can be reduced.

Embodiment 2 When a plurality of diode-type semiconductor switches are formed adjacent to each other on a wafer, wiring may be performed so as to share a bypass line between adjacent semiconductor switches. And FIG. 10 is a schematic partial view showing an example of the semiconductor switch according to the second embodiment of the present invention. In FIG. 10, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted, and only the differences from FIG. 1 will be described. The equivalent circuit of the semiconductor switch shown in FIG. 10 is the same as that of FIG.

The difference between FIG. 10 and FIG. 1 lies in that the adjacent semiconductor switches 1 are wired so as to share the bypass line 12, and the bypass lines wired so as to be shared. Is a bypass line 52, and accordingly, one of the semiconductor switches is a semiconductor switch 51a and the other is a semiconductor switch 51b. The semiconductor switches 51a and 51b formed adjacent to each other on the wafer are denoted by the same reference numerals for easy understanding, but have the same configuration.

In FIG. 10, a bypass line 52 is formed so as to connect a bypass line bypassing the MIM capacitor 10 of the semiconductor switch 51a to a bypass line bypassing the MIM capacitor 10 of the semiconductor switch 51b. At this time, the semiconductor switch 51a
When the semiconductor chips 51a and 51b are separated from each other, the bypass line 52 is connected to the semiconductor switches 51a and 51b on a cutting region 53 having a predetermined width (about 10 to 15 μm) for cutting and separating the semiconductor chip. To form

In such a configuration, at the time of on-wafer inspection, as in the first embodiment, the semiconductor switch 5
The inspection of 1a and 51b is performed respectively. At this time, for example, an on-wafer inspection is performed on the semiconductor switch 51a, and the control pad 9 is connected to the connection pad 9 of the semiconductor switch 51a.
When the C voltage is applied, the control DC voltage is also applied to the microstrip line 11 of the semiconductor switch 51b for which the on-wafer inspection is not performed, but there is no problem. After the completion of the on-wafer inspection, when the semiconductor switches 51a and 51b are separated from each other at the time of cutting the cutting area 53,
By cutting the portion formed on the cut region 53 of the bypass line 52, the semiconductor switches 51a and 51
Each of the bypass lines 1b is cut.

As described above, in the semiconductor switch according to the second embodiment of the present invention, the same effect as that of the first embodiment can be obtained in a diode-type semiconductor switch, and two semiconductor switches are adjacent to each other on a wafer. In this case, the step of cutting the bypass line formed for each semiconductor switch after the on-wafer inspection can be eliminated.

Embodiment 3 In the first and second embodiments, the MIM capacitor is used as the DC cut element. However, the DC cut may be performed using a coupling line instead of the MIM capacitor.
This is referred to as a third embodiment of the present invention. FIG. 11 is a schematic partial view showing an example of the semiconductor switch according to the third embodiment of the present invention. The equivalent circuit of the semiconductor switch shown in FIG. 11 is the same as that of FIG. In FIG. 11, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

In the semiconductor switch 61 of FIG. 11, between the test pads 5 and 6, an RF
An inspection pad 62 used to connect to an inspection device via a probe is formed. A first signal line 63 formed of a microstrip line is connected to the inspection pad 62, and the inspection pad 62 is connected to the diode element via the first signal line 63. Furthermore,
A second signal line 65 forming a first signal line 63 and a coupling line 64 is formed.
A connection pad 66 to which an external circuit is connected when using the semiconductor switch 61 is formed at one end of the semiconductor switch 61.

In such a configuration, the connection pad 66 in FIG. 11 indicates the RF output terminal 22 in FIG.
In the semiconductor switch 61, similarly to the semiconductor switch 1 of FIG. 1, a control DC voltage for controlling the switching of the semiconductor switch 61 can be applied from the RF output terminal 22 at the time of on-wafer inspection. It is necessary to configure a bias circuit. For this reason, at the time of the on-wafer inspection, the respective connection terminals of the general-purpose RF probe 41a with a built-in bias tee are connected to the inspection pads 5, 6, and 62, respectively, and a predetermined inspection is performed as in FIG. In mounting the semiconductor switch 61, an external circuit is connected to the control pad 13 and the connection pad 66.

As described above, the semiconductor switch according to the third embodiment of the present invention is a diode-type semiconductor switch.
2, a control DC voltage is applied to the first signal line 63, and at the time of mounting, an RF signal is input from the connection pad 66 using the second signal line 65 forming the first signal line 63 and the coupling line 64. Or output is performed. Thus, the same effect as in the first embodiment can be obtained, and it is not necessary to add a step of cutting the bypass line after the completion of the on-wafer inspection.

Embodiment 4 In the first to third embodiments, the case of the diode-type semiconductor switch has been described, but from now on, the case of the transistor-type semiconductor switch will be described. FIG. 12 is a schematic partial view showing an example of a semiconductor switch according to the fourth embodiment of the present invention, and FIG. 13 is a diagram showing an equivalent circuit of the semiconductor switch shown in FIG.

In the semiconductor switch 71 shown in FIG. 12, electrodes 73 and 74 are formed on a semiconductor chip 72, and the electrodes 73 are connected to an inspection pad 75 used for connecting to an inspection apparatus during an on-wafer inspection. Similarly, the electrode 74 is connected to an inspection pad 76 used to connect to an inspection device at the time of on-wafer inspection.

The inspection pad 75 is grounded via a via hole 77, and the inspection pad 76 is grounded via a via hole 78. A connection pad 79 to which an external circuit is connected when the semiconductor switch 71 is used is formed between the inspection pads 75 and 76. The connection pad 79 is connected to a DC cut element, for example, a microstrip line 81 provided with a MIM capacitor 80. The connection pad 79 is connected to the transistor element via the microstrip line 81.

Further, a control pad 83 to which a control DC voltage for controlling the switching operation of the semiconductor switch 71 is applied is formed. The control pad 83 is connected to a transistor element via a line 84. I have. The control pad 83 is connected to the line between the connection pad 79 and the MIM capacitor 80 in the microstrip line 81 via the line 85, and is connected to the connection pad 79.

Here, as shown in FIG. 13, the semiconductor switch 71 is a transistor-type switch arranged in parallel. In FIG. 13, the semiconductor switch 71
Is an RF input terminal 91 to which a high-frequency signal is input;
An RF output terminal 92 from which a high-frequency signal input from an F input terminal 91 is output in accordance with a switching operation, and a DC control terminal 93 to which a control DC voltage is externally applied. The RF input terminal 91 and the RF output terminal 92
Field effect transistors (hereinafter referred to as FETs)
The source of the FET 94 is connected to the drain of the transistor 94 and grounded. The DC control terminal 93 is connected to the gate of the FET 94.

In such a configuration, the connection pad 79 in FIG. 12 indicates the RF input terminal 91 or the RF output terminal 92 in FIG. 13, and the control pad 83 in FIG.
14 illustrates a DC control terminal 93 of FIG. In the semiconductor switch 71, a control DC voltage for controlling the switching of the semiconductor switch 71 is applied from the connection pad 79 at the time of on-wafer inspection, but it is necessary to externally configure a bias circuit.

For this reason, a waveguide type probe head (hereinafter referred to as an RF probe) for inputting or outputting a high-frequency signal from an inspection apparatus at the time of on-wafer inspection is used.
At this time, a general-purpose RF probe with a built-in bias tee is used as the RF probe connected to the connection pad 79. Note that the connection portion with the RF probe in another connection pad (not shown) forming the RF input terminal 91 or the RF output terminal 92 is the same as the conventional one, and a description thereof will be omitted.

The schematic block diagram showing the SP3T changeover switch formed using the semiconductor switch 71 shown in FIGS. 12 and 13 is the same as FIG. 3, and is an example of the arrangement of RF probes for performing on-wafer inspection. Is the same as FIG. 4 and will be omitted.

FIG. 14 is a diagram showing a connection example between the RF probe 41a of FIG. 4 and each pad shown in FIG. In FIG. 14, during the on-wafer inspection, the RF probe 41a has connection terminals located at both ends of the three connection terminals connected to the inspection pads 75 and 76, respectively, and located at the center. The connection terminal is connected to the connection pad 79. As shown in FIG.
When 1a to 41d are arranged at predetermined positions and connection with predetermined pads of the semiconductor switch 71 is completed, an on-wafer inspection is performed.

At the time of on-wafer inspection, the RF probe 41a
Applies a control DC voltage to the connection pad 79 and receives a high-frequency signal from the connection pad 79 in accordance with the switching operation of the semiconductor switch 71. When the on-wafer inspection is completed, the line 85 is cut by fusing by applying a current, cutting using a laser, or mechanical cutting. Note that a resistance element may be used for a part of the line 85. The on-wafer inspection method in the inspection apparatus using each RF probe is the same as that described with reference to the flowchart of FIG. 8, and a description thereof will be omitted.

FIG. 15 is a schematic partial view showing another example of the semiconductor switch according to the fourth embodiment of the present invention.
In FIG. 15, the same components as those in FIG. 12 are denoted by the same reference numerals, and the description thereof will be omitted, and only the differences from FIG. 12 will be described. FIG. 15 differs from FIG. 12 in that the wiring pattern of the line 85 is different.
The second line 85 is a line 85a.
In that the semiconductor switch 71 is a semiconductor switch 71a.

In FIG. 15, connection pad 79 in microstrip line 81 and MIM capacitor 80
And the control pad 8 via a line 85a.
3 are connected. A part of the line 85a is
The wiring is wired outside the semiconductor switch 71 beyond the chip separation position 97 cut when the semiconductor chip 72 is separated. By doing so, there is no need to provide a step of cutting the line 85a after the completion of the on-wafer inspection, and the line 85a can be cut at the same time when the semiconductor chip 72 is separated.

In the fourth embodiment, the case where the FET is used as the transistor type semiconductor switch has been described as an example. However, a transistor such as a hetero bipolar transistor (HBT) may be used instead of the FET.

As described above, in the semiconductor switch according to the fourth embodiment of the present invention, in the transistor type semiconductor switch, the connection pad 79 serving as the RF input terminal 91 or the RF output terminal 92 is provided, and the MIM capacitor 80 is provided in the middle. And the control pad 83 is connected by a line between the connection pad 79 and the MIM capacitor 80 in the microstrip line 81, and when the on-wafer inspection is completed, the line is connected. I cut it.

Thus, in the on-wafer inspection performed when the semiconductor switch is manufactured, the control DC voltage can be applied from either the RF input terminal or the RF output terminal using the RF probe, Since the DC probe used for applying the DC voltage can be eliminated, the damage of the RF probe due to the contact of the DC probe with the RF probe can be eliminated, and the DC probe can be eliminated or reduced. Inspection costs can be reduced because the arrangement of each probe is facilitated.

Embodiment 5 When a plurality of transistor-type semiconductor switches are formed adjacently on a wafer, wiring may be performed so as to share a line connecting the connection pad and the control pad between adjacent semiconductor switches. This is referred to as a fifth embodiment of the present invention. FIG.
FIG. 17 is a schematic partial view showing an example of a semiconductor switch according to a fifth embodiment of the present invention. In FIG. 16, FIG.
The same components as in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted, and only the differences from FIG. 12 will be described. The equivalent circuit of the semiconductor switch shown in FIG.
3 and is omitted.

The difference between FIG. 16 and FIG. 12 is that each semiconductor switch 71 formed adjacently has a line 8
5 is shared so as to share the line, and the line wired so as to be shared is referred to as a line 102.
One of the semiconductor switches is a semiconductor switch 101a,
The other semiconductor switch is 101b. Note that the semiconductor switch 10 formed adjacent to the wafer is
The reference numerals 1a and 101b have the same reference numerals for the sake of simplicity, but have the same configuration.

In FIG. 16, a line 102 includes a line 85 of the semiconductor switch 101a and a line 85 of the semiconductor switch 101b.
Is formed so as to be connected to the line 85. At this time, when the semiconductor switches 101a and 101b are separated from each other, a predetermined width (about 10
Semiconductor switch 1 on the cutting region 103 of about 15 μm).
The line 102 is formed so that the respective lines 85 of 01a and 101b are connected.

In such a configuration, at the time of on-wafer inspection, as in the fourth embodiment, the semiconductor switch 1
The inspection of 01a and 101b is performed respectively. At this time, for example, on-wafer inspection is performed on the semiconductor switch 101a, and when a control DC voltage is applied to the connection pad 79 of the semiconductor switch 101a, the microstrip line 81 of the semiconductor switch 101b that has not been subjected to on-wafer inspection and The control DC voltage is also applied to the control pad 83, but there is no problem. After on-wafer inspection is completed,
At the time of cutting the cutting region 103 performed when the semiconductor switches 101a and 101b are separated from each other, a portion formed on the cutting region 103 of the line 102 is cut, so that each line 8 of the semiconductor switches 101a and 101b is cut.
5 are each cut.

As described above, in the semiconductor switch according to the fifth embodiment of the present invention, the same effect as in the fourth embodiment can be obtained in a transistor type semiconductor switch, and two semiconductor switches are provided on a semiconductor chip. When formed adjacent to each other, it is possible to eliminate the step of cutting the line connecting the connection pad and the control pad formed for each semiconductor switch after the on-wafer inspection.

Embodiment 6 FIG. FIG. 17 is a schematic partial view showing an example of a semiconductor switch according to the sixth embodiment of the present invention. An equivalent circuit of the semiconductor switch shown in FIG. 17 is the same as that in FIG. In FIG. 17, the same components as those in FIG. 12 are denoted by the same reference numerals, and description thereof will be omitted.

In the semiconductor switch 111 of FIG.
Between the inspection pads 75 and 76, an inspection pad 112 used for connecting to an inspection device via an RF probe during on-wafer inspection is formed. A line 113 is connected to the inspection pad 112 and the inspection pad 1
12 is connected to the connection pad 79 via the line 113. The connection pad 79 is connected to the transistor element via the microstrip line 81.

Further, the line 113 has a (1/4) λ line 1
14, a bias circuit formed by the MIM capacitor 115, the electrode 116, and the via hole 117 is connected. The line 113 is connected to the M via a (1/4) λ line 114.
The IM capacitor 115 is connected and the MIM capacitor 1
15 is connected to the electrode 116 and grounded via the via hole 117. The control pad 83 is connected to the line 11
8 and (1/4) λ line 114 and MIM capacitor 1
15 and connected to a transistor element via a line 84.

On the other hand, inspection pads 75, 76, 112,
Electrodes 73, 74, 116, via holes 77, 78, 1
17, (1/4) λ line 114 and MIM capacitor 11
5 is formed on the wafer outside the chip separation position 119 which is cut when the semiconductor chip 72 is separated. The (1/4) λ line 114, the MIM capacitor 1
The bias circuit formed by 15, the electrode 116, and the via hole 117 may be formed using a resistance element.

In such a configuration, at the time of on-wafer inspection, the RF probe 41 a applies a control DC voltage to the inspection pad 112 and simultaneously controls the semiconductor switch 111.
In response to the switching operation, a high-frequency signal is input from the inspection pad 112. When on-wafer inspection is completed,
The semiconductor chip 72 is cut and separated at the chip separation position 119, and the inspection pads 75, 76, 112 and the electrodes 73, 74, 11 unnecessary for the semiconductor switch 111 are unnecessary.
6, via holes 77, 78, 117, (1/4) λ line 114 and MIM capacitor 115 are separated.

The on-wafer inspection method in the inspection apparatus using each RF probe is the same as that described with reference to the flowchart of FIG. In FIG. 17, the MIM capacitor 80 is formed on the microstrip line 81, but may be formed in the middle of the line 113. In this case, the (1/4) λ line 11
4 is connected to a line 113 between the test pad 112 and the MIM capacitor 80. By doing so, when the MIM capacitor 80 is not required as a semiconductor switch, the MIM capacitor 80 can be separated after the on-wafer inspection is completed.

As described above, the semiconductor switch according to the sixth embodiment of the present invention can obtain the same effect as that of the fourth embodiment in a transistor type semiconductor switch, and does not require a semiconductor switch after on-wafer inspection. The portions can be separated, and the step of cutting the line connecting the inspection pad and the control pad can be eliminated.

In each of the embodiments except the third embodiment, the MIM capacitor is used as the DC cut element. However, a gap or an interdigital capacitor may be used as the DC cut element.

[0077]

According to a first aspect of the present invention, in the semiconductor switch of the diode type, an external connection electrode is connected to a high-frequency signal line provided with a DC cut element in the middle, and the high-frequency signal is connected to the electrode. A bypass line for bypassing the DC cut element was formed and connected to the line, and the line was cut off when a predetermined test was completed. Therefore, in a predetermined inspection performed when a diode-type semiconductor switch is manufactured, the control D using the RF probe from the external connection electrode is used.
Since the C voltage can be applied and the DC probe used for applying the control DC voltage can be eliminated, the RF probe can be prevented from being damaged due to the contact between the DC probe and the RF probe. , DC
Inspection costs can be reduced because probes can be eliminated or eliminated and the arrangement of each probe becomes easy.

According to a second aspect of the present invention, in the semiconductor switch according to the first aspect, the length of the bypass line is set to １ ／ or less of the wavelength of the high-frequency signal. Thus, the influence of the switching characteristics of the semiconductor switch due to the bypass line can be eliminated.

A semiconductor switch according to a third aspect of the present invention is the semiconductor switch according to any one of the first and second aspects, wherein a part of the bypass line extends beyond a chip separation position where the semiconductor chip is separated when the semiconductor chip is separated. Wired outside. From this, since the bypass line can be cut at the same time when the semiconductor chip is separated after the predetermined inspection is completed, it is not necessary to add a step of cutting the bypass line.

According to a fourth aspect of the present invention, there is provided a semiconductor switch according to the third aspect, wherein when two semiconductor switches are formed adjacently on the wafer, each bypass line is separated from the wafer by cutting the semiconductor chip. Are formed so as to be connected to each other on the chip cutting region, and each is cut when the semiconductor chip is cut and separated. For this reason, after the predetermined inspection is completed, when the adjacent semiconductor chips are separated, the respective bypass lines can be cut at the same time, so that a step of cutting the bypass line for each semiconductor switch is added. Eliminates the need.

According to a fifth aspect of the present invention, in the diode switch, a control DC voltage is applied from the test electrode to the first signal line during a predetermined test, and an external connection electrode is mounted during mounting. Thus, a high-frequency signal is transmitted to the outside using a second signal line that forms a coupling line with the first signal line. From this, in a predetermined inspection performed when a diode-type semiconductor switch is manufactured, a control DC voltage can be applied from an external connection electrode using an RF probe,
Since the DC probe used for applying the control DC voltage can be eliminated, the DC probe and the RF
The RF probe can be prevented from being damaged due to the contact with the probe, and the DC probe can be eliminated or eliminated, and the arrangement of each probe becomes easy, so that the inspection cost can be reduced.

According to a sixth aspect of the present invention, in the semiconductor switch of the transistor type, the external connection electrode is connected to the high-frequency signal line in which the DC cut element is provided in the middle and the high-frequency signal line is connected. ,
The line between the external connection electrode and the DC cut element and the control electrode are connected by a test line, and when a predetermined test is completed, the test line is cut. For this reason, in a predetermined inspection performed when a transistor-type semiconductor switch is manufactured, the RF from the external connection electrode is determined.
A control DC voltage can be applied by using a probe, and D which has been used to apply the control DC voltage can be applied.
Since the C probe can be eliminated, the RF probe can be prevented from being damaged due to the contact between the DC probe and the RF probe, and the DC probe can be eliminated or reduced, thereby facilitating the arrangement of each probe. Costs can be reduced.

According to a seventh aspect of the present invention, in the semiconductor switch according to the sixth aspect, a part of the inspection line is wired outside the semiconductor switch beyond a chip separation position where the semiconductor chip is separated when the semiconductor chip is separated. Therefore, after the predetermined inspection is completed, the inspection line can be cut at the same time when the semiconductor chip is separated, so that it is not necessary to add a step of cutting the inspection line.

In the semiconductor switch according to the present invention, when two semiconductor switches are formed adjacently on the wafer, each inspection line is separated by cutting each semiconductor chip. Are formed so as to be connected to each other on a chip cutting region on the wafer, and are cut when the semiconductor chips are cut and separated. From this, after the predetermined test is completed, when the adjacent semiconductor chips are separated, the respective test lines can be cut at the same time, so that the test line performed for each semiconductor switch is cut. There is no need to add a process.

In the semiconductor switch according to the ninth aspect, a test electrode and a transistor bias circuit used for performing a predetermined test are formed on a wafer outside the semiconductor chip, and the semiconductor chip is cut and separated. It was made to separate at the time. Accordingly, the same effect as that of claim 6 can be obtained, and after a predetermined inspection is completed, an unnecessary portion as a semiconductor switch can be separated, and the inspection electrode and the control electrode are connected. There is no need to add a line cutting step.

According to a tenth aspect of the present invention, in the semiconductor switch according to any one of the first to ninth aspects, specifically, the high frequency signal input from the outside according to the switching operation is output to the external connection electrode. Used for the output electrode. Therefore, in a predetermined inspection performed when a semiconductor switch is manufactured, it is possible to detect a high-frequency signal output from the semiconductor switch using an RF probe from an external connection electrode and apply a control DC voltage. Can be used to apply the DC voltage for control.
Since the C probe can be eliminated, the RF probe can be prevented from being damaged due to the contact between the DC probe and the RF probe, and the DC probe can be eliminated or reduced, thereby facilitating the arrangement of each probe. Costs can be reduced.

In the semiconductor switch according to the eleventh aspect, in any one of the first to ninth aspects, specifically, the external connection electrode is used as an input electrode to which a high-frequency signal is input from the outside. Therefore, in a predetermined inspection performed when a semiconductor switch is manufactured, it is possible to detect a high-frequency signal output from the semiconductor switch using an RF probe from an external connection electrode and apply a control DC voltage. The DC probe used for applying the control DC voltage can be eliminated, so that the RF probe can be prevented from being damaged due to the contact between the DC probe and the RF probe, and the DC probe is eliminated or reduced. As a result, the arrangement of each probe is facilitated, so that the inspection cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic partial view showing an example of a semiconductor switch according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an equivalent circuit of the semiconductor switch 1 of FIG.

FIG. 3 shows SP3 formed using semiconductor switch 1
FIG. 3 is a schematic block diagram showing a T change switch.

FIG. 4 is a diagram showing an example of an arrangement of RF probes for performing on-wafer inspection in a changeover switch 30 of FIG. 3;

FIG. 5 is a diagram showing a connection example between one of the RF probes shown in FIG. 4 and each pad shown in FIG. 1;

6 is a schematic partial view showing a state where a bypass line 12 in the semiconductor switch 1 of FIG. 1 is cut off.

FIG. 7 is a diagram showing a simulation result of switching characteristics of the semiconductor switch 1 with respect to a line length L of a bypass line 12.

8 is a flowchart showing an operation example of on-wafer inspection for a semiconductor switch in the inspection device using each probe of FIG. 4;

FIG. 9 is a schematic partial view showing another example of the semiconductor switch according to the first embodiment of the present invention.

FIG. 10 is a schematic partial view showing an example of a semiconductor switch according to a second embodiment of the present invention.

FIG. 11 is a schematic partial view showing an example of a semiconductor switch according to a third embodiment of the present invention.

FIG. 12 is a schematic partial view showing an example of a semiconductor switch according to a fourth embodiment of the present invention.

13 is a diagram showing an equivalent circuit of the semiconductor switch 71 of FIG.

14 is a diagram showing a connection example between the RF probe 41a in FIG. 4 and each pad in FIG. 12;

FIG. 15 is a schematic partial view showing another example of the semiconductor switch according to the fourth embodiment of the present invention.

FIG. 16 is a schematic partial view showing an example of a semiconductor switch according to a fifth embodiment of the present invention.

FIG. 17 is a schematic partial view showing an example of a semiconductor switch according to a sixth embodiment of the present invention.

FIG. 18 is a schematic block diagram showing an SPST semiconductor switch.

FIG. 19 is a schematic view showing an SP3T semiconductor switch.

FIG. 20 is a schematic view showing an SPnT semiconductor switch.

FIG. 21 is a schematic block diagram showing an example of an SP3T semiconductor switch formed using three SPST semiconductor switches.

FIG. 22 is a diagram showing a conventional arrangement example of an RF probe and a DC probe for performing on-wafer inspection.

23 is a flowchart showing an operation example of on-wafer inspection for a semiconductor switch in the inspection device using each probe of FIG. 22;

[Explanation of symbols]

1, 1a, 51a, 51b, 61, 71, 71a, 10
1a, 101b, 111 semiconductor switch, 2, 72
Semiconductor chip, 3,4,73,74,116 electrode, 5,6,62,75,76,112 test pad, 7,8,77,78,117 via hole,
9, 66, 79 Connection pads, 10, 80, 115
MIM capacitor, 11,81 microstrip line, 12,12a, 52,102 bypass line,
13,83 Control pad, 21,91 RF input terminal, 22,92 RF output terminal, 26 diode, 45,97,119 Chip separation position, 53,
103 cutting area, 63 first signal line, 64 coupling line, 65 second signal line, 85, 85
a, 102, 113, 118 lines, 93 DC control terminal, 94 FET, 114 (1/4) λ line.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Takayuki Kato 2-3-2 Marunouchi, Chiyoda-ku, Tokyo F-term in Mitsubishi Electric Corporation (reference) 5J012 BA02

Claims (11)

[Claims] 1. A diode-type semiconductor switch using a diode for switching of a high-frequency signal, wherein when performing a predetermined test, a DC bias voltage is externally applied to the diode, and the high-frequency signal is transmitted to the outside. An external connection electrode, a high frequency signal line connecting the external connection electrode and the diode, and a DC cut element provided with a DC cut element for cutting a direct current component of a signal; Bypass the element for
And a bypass line cut after completion of the predetermined inspection. 2. The bypass line according to claim 1, wherein the line length is equal to or less than １ ／ of the wavelength of the high-frequency signal.
3. The semiconductor switch according to claim 1. 3. The bypass line according to claim 1, wherein a part of the bypass line is formed on a wafer outside the semiconductor chip, and is cut when the semiconductor chip is cut and separated. 3. The semiconductor switch according to any one of 2. 4. The semiconductor device according to claim 1, wherein each of the bypass lines in each of the semiconductor switches formed adjacently on the wafer is connected to each other on a chip cutting area on the wafer when each semiconductor chip is cut and separated. 4. The semiconductor switch according to claim 3, wherein the semiconductor switch is formed and cut when the semiconductor chip is cut and separated in the chip cutting region. 5. A diode-type semiconductor switch using a diode for switching of a high-frequency signal, wherein, when a predetermined test is performed, a test electrode to which a DC bias voltage is externally applied to the diode, and the test electrode A first signal line connecting the first signal line and the diode; a second signal line forming a coupling line with the first signal line; and transmission of a high-frequency signal to the outside formed at one end of the second signal line. And an external connection electrode for performing the following. 6. A transistor-type semiconductor switch using a transistor for switching a high-frequency signal, wherein when a predetermined test is performed, a DC bias voltage is externally applied to the transistor, and the high-frequency signal is transmitted to the outside. An external connection electrode, a high-frequency signal line connecting the external connection electrode and the transistor, provided with a DC cut element for cutting a DC component of a signal, and a switching operation of the transistor from outside. A semiconductor, comprising: a control electrode to which a control signal to be controlled is input; and an inspection line that connects the external connection electrode and the control electrode and is cut after the predetermined inspection is completed. switch. 7. The inspection line according to claim 6, wherein a part of the line is formed on a wafer outside the semiconductor chip, and is cut when the semiconductor chip is cut and separated.
3. The semiconductor switch according to claim 1. 8. The inspection line in each semiconductor switch formed adjacent to the wafer so as to be connected to each other on a chip cutting area on the wafer when each semiconductor chip is cut and separated. 8. The semiconductor switch according to claim 7, wherein the semiconductor switch is formed and cut when the semiconductor chip is cut and separated in the chip cutting region. 9. A transistor-type semiconductor switch using a transistor for switching a high-frequency signal, comprising: an external connection electrode for transmitting a high-frequency signal to the outside; and a DC cut element for cutting a DC component of the signal. A high-frequency signal line that connects the external connection electrode and the transistor; a control electrode to which a control signal for controlling a switching operation of the transistor is externally input; and a connection to the external connection electrode An inspection electrode formed on a wafer outside the semiconductor chip, to which a control voltage for the transistor is externally applied when performing a predetermined inspection, and provided between the inspection electrode and the control electrode. And a bias circuit for the transistor formed on a wafer outside the semiconductor chip. And the bias circuit is separated when the semiconductor chip is cut and separated. 10. The device according to claim 1, wherein the external connection electrode forms an output electrode from which a high-frequency signal input from the outside is output in accordance with a switching operation. Semiconductor switch. 11. The semiconductor switch according to claim 1, wherein the external connection electrode forms an input electrode to which a high-frequency signal is input from the outside.