JP2000147765A - Photosensitive resin composition, photosensitive element and production of resist using them - Google Patents
Photosensitive resin composition, photosensitive element and production of resist using themInfo
- Publication number
- JP2000147765A JP2000147765A JP31854198A JP31854198A JP2000147765A JP 2000147765 A JP2000147765 A JP 2000147765A JP 31854198 A JP31854198 A JP 31854198A JP 31854198 A JP31854198 A JP 31854198A JP 2000147765 A JP2000147765 A JP 2000147765A
- Authority
- JP
- Japan
- Prior art keywords
- group
- resin composition
- photosensitive resin
- plating
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000007747 plating Methods 0.000 claims abstract description 83
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 18
- 239000003999 initiator Substances 0.000 claims abstract description 13
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 11
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 8
- 239000000539 dimer Substances 0.000 claims abstract description 6
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 239000013039 cover film Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- 125000004018 acid anhydride group Chemical group 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 239000012948 isocyanate Substances 0.000 claims description 4
- 150000002513 isocyanates Chemical class 0.000 claims description 4
- 150000008065 acid anhydrides Chemical class 0.000 claims description 3
- 125000005529 alkyleneoxy group Chemical group 0.000 claims description 3
- 125000000732 arylene group Chemical group 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 150000007519 polyprotic acids Polymers 0.000 claims description 3
- 125000005156 substituted alkylene group Chemical group 0.000 claims description 3
- 125000005649 substituted arylene group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052802 copper Inorganic materials 0.000 abstract description 32
- 239000010949 copper Substances 0.000 abstract description 32
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 13
- 238000005476 soldering Methods 0.000 abstract description 2
- 238000006056 electrooxidation reaction Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 46
- -1 and if necessary Chemical compound 0.000 description 30
- 238000000034 method Methods 0.000 description 23
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 22
- 239000003054 catalyst Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000000654 additive Substances 0.000 description 12
- 230000000996 additive effect Effects 0.000 description 12
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000007772 electroless plating Methods 0.000 description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 description 10
- 239000005020 polyethylene terephthalate Substances 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 7
- 239000003513 alkali Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 229920000459 Nitrile rubber Polymers 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000007667 floating Methods 0.000 description 5
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910021538 borax Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000004328 sodium tetraborate Substances 0.000 description 3
- 235000010339 sodium tetraborate Nutrition 0.000 description 3
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- URFNSYWAGGETFK-UHFFFAOYSA-N 4,4'-Dihydroxybibenzyl Chemical compound C1=CC(O)=CC=C1CCC1=CC=C(O)C=C1 URFNSYWAGGETFK-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000009824 pressure lamination Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 2
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- FWUIHQFQLSWYED-ARJAWSKDSA-N (z)-4-oxo-4-propan-2-yloxybut-2-enoic acid Chemical compound CC(C)OC(=O)\C=C/C(O)=O FWUIHQFQLSWYED-ARJAWSKDSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- OTKCEEWUXHVZQI-UHFFFAOYSA-N 1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)CC1=CC=CC=C1 OTKCEEWUXHVZQI-UHFFFAOYSA-N 0.000 description 1
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 1
- VMCRQYHCDSXNLW-UHFFFAOYSA-N 1-(4-tert-butylphenyl)-2,2-dichloroethanone Chemical compound CC(C)(C)C1=CC=C(C(=O)C(Cl)Cl)C=C1 VMCRQYHCDSXNLW-UHFFFAOYSA-N 0.000 description 1
- HUDYANRNMZDQGA-UHFFFAOYSA-N 1-[4-(dimethylamino)phenyl]ethanone Chemical compound CN(C)C1=CC=C(C(C)=O)C=C1 HUDYANRNMZDQGA-UHFFFAOYSA-N 0.000 description 1
- MQCPOLNSJCWPGT-UHFFFAOYSA-N 2,2'-Bisphenol F Chemical compound OC1=CC=CC=C1CC1=CC=CC=C1O MQCPOLNSJCWPGT-UHFFFAOYSA-N 0.000 description 1
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical class C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- MDKSQNHUHMMKPP-UHFFFAOYSA-N 2,5-bis(4-methoxyphenyl)-4-phenyl-1h-imidazole Chemical class C1=CC(OC)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC(OC)=CC=2)N1 MDKSQNHUHMMKPP-UHFFFAOYSA-N 0.000 description 1
- LYANEXCVXFZQFF-UHFFFAOYSA-N 2-(2,5-dioxooxolan-3-yl)acetic acid Chemical compound OC(=O)CC1CC(=O)OC1=O LYANEXCVXFZQFF-UHFFFAOYSA-N 0.000 description 1
- XCCJHWPREGFUJH-UHFFFAOYSA-N 2-(2-ethoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class CCOC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XCCJHWPREGFUJH-UHFFFAOYSA-N 0.000 description 1
- UIHRWPYOTGCOJP-UHFFFAOYSA-N 2-(2-fluorophenyl)-4,5-diphenyl-1h-imidazole Chemical class FC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 UIHRWPYOTGCOJP-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- XIOGJAPOAUEYJO-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class COC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XIOGJAPOAUEYJO-UHFFFAOYSA-N 0.000 description 1
- PFKZVLNFODHROM-UHFFFAOYSA-N 2-(4-ethoxyphenyl)-5-phenyl-1h-imidazole Chemical class C1=CC(OCC)=CC=C1C1=NC(C=2C=CC=CC=2)=CN1 PFKZVLNFODHROM-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- LVLNPXCISNPHLE-UHFFFAOYSA-N 2-[(4-hydroxyphenyl)methyl]phenol Chemical compound C1=CC(O)=CC=C1CC1=CC=CC=C1O LVLNPXCISNPHLE-UHFFFAOYSA-N 0.000 description 1
- DTCQGQSGPULSES-UHFFFAOYSA-N 2-[2-[4-[2-[4-[2-(2-prop-2-enoyloxyethoxy)ethoxy]phenyl]propan-2-yl]phenoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=1C=C(OCCOCCOC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OCCOCCOC(=O)C=C)C=C1 DTCQGQSGPULSES-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- QPXVRLXJHPTCPW-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-(4-propan-2-ylphenyl)propan-1-one Chemical compound CC(C)C1=CC=C(C(=O)C(C)(C)O)C=C1 QPXVRLXJHPTCPW-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- WEDIKFMKQKSZSG-UHFFFAOYSA-N 2-methoxy-1-(2-methoxyphenyl)ethanone Chemical class COCC(=O)C1=CC=CC=C1OC WEDIKFMKQKSZSG-UHFFFAOYSA-N 0.000 description 1
- YMTYZTXUZLQUSF-UHFFFAOYSA-N 3,3'-Dimethylbisphenol A Chemical compound C1=C(O)C(C)=CC(C(C)(C)C=2C=C(C)C(O)=CC=2)=C1 YMTYZTXUZLQUSF-UHFFFAOYSA-N 0.000 description 1
- RKSBPFMNOJWYSB-UHFFFAOYSA-N 3,3-Bis(4-hydroxyphenyl)pentane Chemical compound C=1C=C(O)C=CC=1C(CC)(CC)C1=CC=C(O)C=C1 RKSBPFMNOJWYSB-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- CGFCKPWPXHKFPU-UHFFFAOYSA-N 3-chloro-4-[1-(2-chloro-4-hydroxyphenyl)ethyl]phenol Chemical compound C=1C=C(O)C=C(Cl)C=1C(C)C1=CC=C(O)C=C1Cl CGFCKPWPXHKFPU-UHFFFAOYSA-N 0.000 description 1
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- ACEMPBSQAVZNEJ-UHFFFAOYSA-N 4-[(4-hydroxy-3-methoxy-2,6-dimethylphenyl)methyl]-2-methoxy-3,5-dimethylphenol Chemical compound C1=C(O)C(OC)=C(C)C(CC=2C(=C(OC)C(O)=CC=2C)C)=C1C ACEMPBSQAVZNEJ-UHFFFAOYSA-N 0.000 description 1
- XDGXPHFWSPGAIB-UHFFFAOYSA-N 4-[1-(4-hydroxy-3-methylphenyl)ethyl]-2-methylphenol Chemical compound C=1C=C(O)C(C)=CC=1C(C)C1=CC=C(O)C(C)=C1 XDGXPHFWSPGAIB-UHFFFAOYSA-N 0.000 description 1
- KCAPNGLKHXOABM-UHFFFAOYSA-N 4-[2-(4-hydroxy-2-propan-2-ylphenyl)propan-2-yl]-3-propan-2-ylphenol Chemical compound CC(C)C1=CC(O)=CC=C1C(C)(C)C1=CC=C(O)C=C1C(C)C KCAPNGLKHXOABM-UHFFFAOYSA-N 0.000 description 1
- ZZXOXJAAKGCFNH-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)-1,2-diphenylpropyl]phenol Chemical compound C=1C=CC=CC=1C(C=1C=CC(O)=CC=1)(C)C(C=1C=CC(O)=CC=1)C1=CC=CC=C1 ZZXOXJAAKGCFNH-UHFFFAOYSA-N 0.000 description 1
- DUKMWXLEZOCRSO-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)-1-phenylpropan-2-yl]phenol Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)CC1=CC=CC=C1 DUKMWXLEZOCRSO-UHFFFAOYSA-N 0.000 description 1
- XHQYAMKBTLODDV-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)heptan-2-yl]phenol Chemical compound C=1C=C(O)C=CC=1C(C)(CCCCC)C1=CC=C(O)C=C1 XHQYAMKBTLODDV-UHFFFAOYSA-N 0.000 description 1
- WCUDAIJOADOKAW-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)pentan-2-yl]phenol Chemical compound C=1C=C(O)C=CC=1C(C)(CCC)C1=CC=C(O)C=C1 WCUDAIJOADOKAW-UHFFFAOYSA-N 0.000 description 1
- TYSAZKXCCTWCFI-UHFFFAOYSA-N 4-[3-(4-hydroxy-3-methylphenyl)propyl]-2-methylphenol Chemical compound C1=C(O)C(C)=CC(CCCC=2C=C(C)C(O)=CC=2)=C1 TYSAZKXCCTWCFI-UHFFFAOYSA-N 0.000 description 1
- YZYGDZRBLOLVDY-UHFFFAOYSA-N 4-[cyclohexyl-(4-hydroxyphenyl)methyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C1CCCCC1 YZYGDZRBLOLVDY-UHFFFAOYSA-N 0.000 description 1
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- 229910004844 Na2B4O7.10H2O Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- ZNAAXKXXDQLJIX-UHFFFAOYSA-N bis(2-cyclohexyl-3-hydroxyphenyl)methanone Chemical compound C1CCCCC1C=1C(O)=CC=CC=1C(=O)C1=CC=CC(O)=C1C1CCCCC1 ZNAAXKXXDQLJIX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- VEIOBOXBGYWJIT-UHFFFAOYSA-N cyclohexane;methanol Chemical compound OC.OC.C1CCCCC1 VEIOBOXBGYWJIT-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- VPASWAQPISSKJP-UHFFFAOYSA-N ethyl prop-2-enoate;isocyanic acid Chemical compound N=C=O.CCOC(=O)C=C VPASWAQPISSKJP-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- FLBJFXNAEMSXGL-UHFFFAOYSA-N het anhydride Chemical compound O=C1OC(=O)C2C1C1(Cl)C(Cl)=C(Cl)C2(Cl)C1(Cl)Cl FLBJFXNAEMSXGL-UHFFFAOYSA-N 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- UWNADWZGEHDQAB-UHFFFAOYSA-N i-Pr2C2H4i-Pr2 Natural products CC(C)CCC(C)C UWNADWZGEHDQAB-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- YOSXAXYCARLZTR-UHFFFAOYSA-N prop-2-enoyl isocyanate Chemical compound C=CC(=O)N=C=O YOSXAXYCARLZTR-UHFFFAOYSA-N 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、感光性樹脂組成
物、感光性エレメント及びこれらを用いためっきレジス
トの製造方法に関する。The present invention relates to a photosensitive resin composition, a photosensitive element, and a method for producing a plating resist using the same.
【0002】[0002]
【従来の技術】プリント配線板の製造は、スルーホール
導通部を無電解薄付けめっきと電解メッキとを併用して
形成し、配線パターン部をエッチングで形成するサブト
ラクティブ法により主に行われている。一方、スルーホ
ール導通部及び配線パターン部を無電解めっきで形成す
るアディティブ法が実用化されている。アディティブ法
は、無電解めっきによってめっきレジストの壁に沿って
めっき銅を析出させ配線を形成するために、レジストの
解像度と同等の微細配線形成が可能であり、また、小径
スルーホールも均一なめっきを行えるため、高密度印刷
配線板の製造方法として注目されている。2. Description of the Related Art A printed wiring board is mainly manufactured by a subtractive method in which a through-hole conductive portion is formed by using both electroless thin plating and electrolytic plating, and a wiring pattern portion is formed by etching. I have. On the other hand, an additive method of forming a through-hole conductive portion and a wiring pattern portion by electroless plating has been put to practical use. In the additive method, fine wiring equivalent to the resolution of the resist can be formed because the copper is deposited by plating the copper along the walls of the plating resist by electroless plating. Therefore, it is attracting attention as a method for manufacturing a high-density printed wiring board.
【0003】このアディティブ法においては、高アルカ
リ(通常pH=11〜13.5)、高温度(通常60〜
80℃)の無電解めっき液に長時間(通常4〜50時
間)耐える無電解電気めっき用レジストが必要であり、
また通常150μm(線幅及び間隔)の微細配線を形成
するためには、スクリーン印刷用レジストでは困難で、
フォトレジストが要求される。In the additive method, a high alkali (usually pH = 11 to 13.5) and a high temperature (usually 60 to 13.5) are used.
A resist for electroless electroplating that can withstand an electroless plating solution of 80 ° C) for a long time (typically 4 to 50 hours) is required.
In addition, it is difficult to form fine wiring having a width of 150 μm (line width and interval) with a screen printing resist.
Photoresist is required.
【0004】アディティブ法用のフォトレジストの提案
が、特開昭50−43468号公報、特開昭54−77
0号公報、特開昭58−100490号公報、特開昭5
8−199341号公報、特開昭59−12434号公
報、特開昭60−101532号公報などでなされてい
る。また、無電解銅めっき液の汚染が少なく、量産性の
優れたフォトレジストが特開昭62−18692号公報
でなされている。しかしながらこれらの提案されたフォ
トレジストは、いずれも1,1,1−トリクロロエタン
等の有機溶剤を用いており、作業環境や処理コストの面
で問題があった。更に、環境汚染の問題からハロゲン系
有機溶剤の使用は規制されており、アディティブ法でも
作業環境が良好で環境汚染の問題のない、すなわちハロ
ゲン系有機溶剤を使用しない現像液を用いたフォトレジ
ストによる印刷配線板の製造方法が求められている。A photoresist for an additive method has been proposed in Japanese Patent Application Laid-Open Nos. 50-43468 and 54-77.
0, JP-A-58-100490, JP-A-5100
This is described in JP-A-8-199341, JP-A-59-12434, JP-A-60-101532 and the like. Further, a photoresist which is less contaminated by an electroless copper plating solution and has excellent mass productivity is disclosed in Japanese Patent Application Laid-Open No. 62-18692. However, these proposed photoresists all use an organic solvent such as 1,1,1-trichloroethane, and have problems in terms of working environment and processing cost. Furthermore, the use of halogen-based organic solvents is regulated due to the problem of environmental pollution, and the working environment is good even with the additive method and there is no problem of environmental pollution, that is, a photoresist using a developing solution that does not use a halogen-based organic solvent is used. There is a need for a method of manufacturing a printed wiring board.
【0005】アルカリ水溶液で現像可能な無電解めっき
用フォトレジストとして、特開平2−166452号公
報には、無水マレイン酸とビニル基を有する芳香族炭化
水素との共重合体にヒドロキシ(メタ)アクリレートを
付加させた化合物と、カルボキシ基含有のエポキシアク
リレートとを併せて含有する樹脂組成物に代表されるア
ルカリ現像型の樹脂組成物が開示されている。As a photoresist for electroless plating which can be developed with an aqueous alkali solution, JP-A-2-166452 discloses a copolymer of maleic anhydride and an aromatic hydrocarbon having a vinyl group with hydroxy (meth) acrylate. And a resin composition of an alkali development type represented by a resin composition containing a compound added with a carboxy group-containing epoxy acrylate.
【0006】特開平2−230154号公報には、アル
カリ水溶液で現像可能な銅のめっきレジスト材料とし
て、スチレンとマレイン酸モノ−iso−プロピルの2
元共重合体にグリシジルメタクリレートを付加した化合
物に代表される重合体と、ベンジルメタクリレート、メ
タクリル酸−2−ヒドロキシブチル及びメタクリル酸の
3元共重合体に代表される重合体とを併せて含有する光
重合性組成物が開示されている。Japanese Unexamined Patent Publication (Kokai) No. 2-230154 discloses styrene and mono-iso-propyl maleate as copper plating resist materials which can be developed with an aqueous alkali solution.
It contains both a polymer represented by a compound obtained by adding glycidyl methacrylate to a copolymer and a polymer represented by a terpolymer of benzyl methacrylate, 2-hydroxybutyl methacrylate and methacrylic acid. A photopolymerizable composition is disclosed.
【0007】特開平5−72735号公報には、アルカ
リ水溶液で現像可能な無電解めっき用フォトレジストと
して、親水基を有するモノマーの重合体を枝ポリマーと
するグラフトポリマーとアルカリ水溶液に溶解又は膨潤
するバインダーポリマーとを含有する感光性樹脂組成物
が開示されている。JP-A-5-72735 discloses a photoresist for electroless plating which can be developed with an aqueous alkali solution, which is dissolved or swelled in an aqueous alkali solution with a graft polymer having a polymer of a monomer having a hydrophilic group as a branch polymer. A photosensitive resin composition containing a binder polymer is disclosed.
【0008】特開平5−107760号公報には、アル
カリ水溶液で現像可能な無電解めっき用フォトレジスト
として、アルカリ水溶液に溶解又は膨潤するバインダー
ポリマーと、活性エネルギー線の照射により強酸を発生
させる化合物とメチロール(メタ)アクリルアミド誘導
体の共重合体とを含有する感光性樹脂組成物が開示され
ている。Japanese Patent Application Laid-Open No. 5-107760 discloses a photoresist for electroless plating which can be developed with an alkaline aqueous solution, a binder polymer which dissolves or swells in an alkaline aqueous solution, and a compound which generates a strong acid upon irradiation with active energy rays. A photosensitive resin composition containing a methylol (meth) acrylamide derivative copolymer is disclosed.
【0009】しかしながら、これらの提案されたフォト
レジストは耐無電解銅めっき性の裕度が低く、めっき液
のpHが高くなったり、めっき時間が長くなるとレジス
トのふくれや剥離が生じるなどの問題があり実用プロセ
スでの使用が難しい。更に、これらのレジスト中には多
量のカルボン酸が残存しているために、pH12〜13
のめっき液中でレジストが吸水膨潤する。この状態でめ
っき銅が析出した後、乾燥工程でレジストが乾燥収縮す
ると、レジストとめっき銅との間に間隙が発生するとい
う本質的問題がある。この間隙の存在は、めっき後の工
程で、使用する各種薬液の残留につながり、更に、ソル
ダーレジストが追従できないので、最終的に得られた印
刷配線板の電気的な信頼性を大幅に低下させる。However, these proposed photoresists have problems such as low tolerance of electroless copper plating resistance, high pH of a plating solution, and blistering or peeling of the resist when the plating time is long. It is difficult to use in practical processes. Further, since a large amount of carboxylic acid remains in these resists, the pH is 12 to 13.
The resist swells in the plating solution. When the resist is dried and shrunk in the drying step after the plating copper is deposited in this state, there is an essential problem that a gap is generated between the resist and the plated copper. The presence of this gap leads to the retention of various chemicals used in the post-plating process, and furthermore, since the solder resist cannot follow, the electrical reliability of the finally obtained printed wiring board is greatly reduced. .
【0010】1〜10vol%の有機溶剤を含有するア
ルカリ水溶液を現像液とするフォトレジストとして特公
昭47−39895号公報には、メタクリル酸及びメタ
クリル酸メチル共重合体、メタクリル酸メチル及びイタ
コン酸共重合体、又はスチレン及びイタコン酸共重合体
を含有する感光性樹脂組成物が開示され、また同様の現
像液を用いるものとして、特開昭59−66289号公
報には、メタクリル酸含有量が4〜12モル%、炭素数
が3〜8のアルキル(メタ)アクリレートを共重合した
ポリマーを含有した感光性樹脂組成物が開示されてい
る。これらの樹脂組成物について調べたところ、メタク
リル酸含有量を多くした場合には、無電解銅めっき性が
低下してレジストの一部が剥離したり、まためっき液を
汚染してめっき速度が低下したり、あるいは析出しため
っき銅の物性が低下し、メタクリル酸含有量の適性範囲
が極めて狭いことが分かった。更に、永久レジストとし
て使用する場合の電気絶縁性やはんだ耐熱性が不足する
という問題があることが分かった。JP-B-47-39895 describes a photoresist using an aqueous alkali solution containing 1 to 10 vol% of an organic solvent as a developing solution, and discloses a copolymer of methacrylic acid and methyl methacrylate, a copolymer of methyl methacrylate and itaconic acid. JP-A-59-66289 discloses a photosensitive resin composition containing a polymer or a copolymer of styrene and itaconic acid. A photosensitive resin composition containing a polymer obtained by copolymerizing an alkyl (meth) acrylate having a carbon number of 3 to 8 with a mole number of 12 to 12 is disclosed. Examination of these resin compositions revealed that, when the methacrylic acid content was increased, the electroless copper plating property was reduced and a part of the resist was peeled off, and the plating solution was contaminated and the plating rate was reduced. It was found that the physical properties of the plated copper deposited or deteriorated, and the suitable range of the methacrylic acid content was extremely narrow. Further, it has been found that there is a problem that the electric insulation property and the solder heat resistance when used as a permanent resist are insufficient.
【0011】[0011]
【発明が解決しようとする課題】本発明の目的は、感度
及び光硬化性に優れ、フォトリソグラフィーにより効率
良く形成でき、解像度及び耐めっき液性等に優れ、めっ
き銅の異常析出やめっき液汚染がなく、永久レジストと
して使用する場合には、はんだ耐熱性、電気絶縁性、耐
電食性等に優れた無電解銅めっき用フォトレジストとし
て好適な感光性樹脂組成物及びこれを用いたレジストの
製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide excellent sensitivity and photocurability, to form efficiently by photolithography, excellent resolution and plating solution resistance, abnormal deposition of plated copper and contamination of plating solution. When used as a permanent resist, a photosensitive resin composition suitable as a photoresist for electroless copper plating excellent in solder heat resistance, electrical insulation, corrosion resistance and the like, and a method for producing a resist using the same Is to provide.
【0012】本発明の他の目的は、感度及び光硬化性に
優れ、フォトリソグラフィーにより効率良く形成でき、
解像度及び耐めっき液性等に優れ、めっき銅の異常析出
やめっき液汚染がなく、永久レジストとして使用する場
合には、はんだ耐熱性、電気絶縁性、耐電食性等に優
れ、また、取り扱い性、作業性に優れた無電解銅めっき
用フォトレジストとして好適な感光性エレメント及びめ
っきレジストの製造方法を提供することにある。Another object of the present invention is to provide a composition having excellent sensitivity and photocurability, which can be efficiently formed by photolithography.
Excellent resolution and plating solution resistance, no abnormal deposition of plating copper and no plating solution contamination.When used as a permanent resist, it has excellent solder heat resistance, electrical insulation, electrolytic corrosion resistance, etc. An object of the present invention is to provide a photosensitive element suitable as a photoresist for electroless copper plating excellent in workability and a method for producing a plating resist.
【0013】[0013]
【課題を解決するための手段】本発明は、(A)一般式
(I)According to the present invention, there is provided (A) a compound represented by the following general formula (I):
【0014】[0014]
【化4】 (式中、R1は2価の飽和脂肪族炭化水素基を表し、R2
及びR3はそれぞれ独立に炭素数1〜4のアルキル基、
炭素数1〜4のアルコキシ基又はハロゲン原子を表し、
x及びyはそれぞれ独立に0〜4の整数を表す。)で示
される繰り返し単位を有するポリヒドロキシエーテル樹
脂中の水酸基に対して、飽和又は不飽和の多塩基酸無水
物を、当量比(酸無水物基/水酸基)が0.08〜0.
8の範囲になるように反応させて得られるカルボキシル
基含有ポリヒドロキシエーテル樹脂化合物、(B)末端
にエチレン性不飽和基を少なくとも1個有する光重合性
不飽和化合物、(C)活性光線により遊離ラジカルを生
成する光重合開始剤及び(D)下記一般式(II)で表
される化合物Embedded image (In the formula, R 1 represents a divalent saturated aliphatic hydrocarbon group, R 2
And R 3 are each independently an alkyl group having 1 to 4 carbon atoms;
Represents an alkoxy group having 1 to 4 carbon atoms or a halogen atom,
x and y each independently represent an integer of 0 to 4; ), The equivalent ratio (acid anhydride group / hydroxyl group) of the saturated or unsaturated polybasic acid anhydride to the hydroxyl group in the polyhydroxyether resin having the repeating unit represented by the formula (1) is 0.08 to 0.
8, a carboxyl group-containing polyhydroxyether resin compound obtained by reacting to have a range of 8; (B) a photopolymerizable unsaturated compound having at least one ethylenically unsaturated group at a terminal; Photopolymerization initiator generating radical and (D) a compound represented by the following general formula (II)
【0015】[0015]
【化5】 (式中、R4、R5及びR6はそれぞれ独立してアルキレ
ン基、置換アルキレン基、アルキレンオキシ基、アリー
レン基又は置換アリーレン基であり、R7、R8及びR9
は、それぞれ独立してイソシアネートと活性水素をもつ
化合物が反応した際に得られる残基を表す。)を含有し
てなる感光性樹脂組成物において、活性光線により遊離
ラジカルを生成する光重合開始剤が2,4,5−トリア
リールイミダゾール二量体の中から選ばれた少なくとも
1種を含有することを特徴とする感光性樹脂組成物並び
にこの感光性樹脂組成物の層と該層を支持する支持体フ
ィルムからなる感光性エレメントを提供するものであ
る。Embedded image (Wherein, R 4 , R 5 and R 6 are each independently an alkylene group, a substituted alkylene group, an alkyleneoxy group, an arylene group or a substituted arylene group, and R 7 , R 8 and R 9
Represents a residue obtained when an isocyanate and a compound having active hydrogen independently react with each other. ), The photopolymerization initiator for generating free radicals by actinic rays contains at least one selected from 2,4,5-triarylimidazole dimers. A photosensitive element comprising a photosensitive resin composition and a layer of the photosensitive resin composition and a support film supporting the layer.
【0016】本発明はまた、前記感光性樹脂組成物の溶
液を基板上に塗布し、乾燥後、像的な活性光照射次いで
現像を行うめっきレジストの製造方法を提供するもので
ある。The present invention also provides a method for producing a plating resist in which a solution of the photosensitive resin composition is coated on a substrate, dried, irradiated with imagewise actinic light, and then developed.
【0017】本発明はまた、上記感光性エレメントを用
い、前記感光性樹脂組成物の層を基板に積層し、像的に
活性光を照射し、次いで現像を行うめっきレジストの製
造方法を提供するものである。The present invention also provides a method for producing a plating resist, comprising laminating a layer of the photosensitive resin composition on a substrate using the above-described photosensitive element, irradiating the layer with imagewise active light, and then developing. Things.
【0018】本発明はまた、前記感光性樹脂組成物及び
感光性エレメントを用い、現像後に活性光線の照射工程
及び加熱工程の一方又は両方の工程を有するめっきレジ
ストの製造方法を提供するものである。The present invention also provides a method for producing a plating resist having one or both of an actinic ray irradiation step and a heating step after development using the photosensitive resin composition and the photosensitive element. .
【0019】[0019]
【発明の実施の形態】以下に本発明の感光性樹脂組成物
について詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the photosensitive resin composition of the present invention will be described in detail.
【0020】本発明の感光性樹脂組成物において(A)
成分のカルボキシル基含有ポリヒドロキシエーテル樹脂
化合物を得るのに用いられる一般式(I)で示される繰
り返し単位を有するポリヒドロキシエーテル樹脂は、例
えばエピハロヒドリン0.985〜1.015モルと二
価多核フェノール1モルとを、水酸化アルカリ金属、例
えば水酸化ナトリウムあるいは水酸化カリウム0.6〜
1.5モルと共に、通常、水性溶媒中、温度10〜50
℃、エピハロヒドリンの少なくとも約60モル%が消費
されるまで混合することにより製造できる。In the photosensitive resin composition of the present invention, (A)
The polyhydroxyether resin having a repeating unit represented by the general formula (I) used to obtain the carboxyl group-containing polyhydroxyether resin compound as the component includes, for example, 0.985 to 1.015 mol of epihalohydrin and divalent polynuclear phenol 1 And a mole of an alkali metal hydroxide, for example, sodium hydroxide or potassium hydroxide 0.6 to
1.5 mol, usually in an aqueous solvent at a temperature of 10 to 50
C. by mixing until at least about 60 mol% of the epihalohydrin is consumed.
【0021】ここで用いられる二価多核フェノールとし
ては、ビス(ヒドロキシフェニル)アルカン、例えば、
2,2−ビス(4−ヒドロキシフェニル)プロパン、
2,4−ジヒドロキシジフェニルメタン、ビス(2−ヒ
ドロキシフェニル)メタン、ビス(4−ヒドロキシフェ
ニル)メタン、ビス(4−ヒドロキシ−2,6−ジメチ
ル−3−メトキシフェニル)メタン、1,2−ビス(4
−ヒドロキシフェニル)エタン、1,1−ビス(4−ヒ
ドロキシ−2−クロロフェニル)エタン、1,1−ビス
(3−メチル−4−ヒドロキシフェニル)エタン、1,
3−ビス(3−メチル−4−ヒドロキシフェニル)プロ
パン、2,2−ビス(3−メチル−4−ヒドロキシフェ
ニル)プロパン、2,2−ビス(2−イソプロピル−4
−ヒドロキシフェニル)プロパン、2,2−ビス(4−
ヒドロキシナフチル)プロパン、2,2−ビス(4−ヒ
ドロキシフェニル)ペンタン、3,3−ビス(4−ヒド
ロキシフェニル)ペンタン、2,2−ビス(4−ヒドロ
キシフェニル)ヘプタン、ビス(4−ヒドロキシフェニ
ル)フェニルメタン、ビス(4−ヒドロキシフェニル)
シクロヘキシルメタン、1,2−ビス(4−ヒドロキシ
フェニル)−1,2−ジフェニルプロパン、2,2−ビ
ス(4−ヒドロキシフェニル)−1−フェニルプロパン
などが好ましい。As the divalent polynuclear phenol used herein, bis (hydroxyphenyl) alkane, for example,
2,2-bis (4-hydroxyphenyl) propane,
2,4-dihydroxydiphenylmethane, bis (2-hydroxyphenyl) methane, bis (4-hydroxyphenyl) methane, bis (4-hydroxy-2,6-dimethyl-3-methoxyphenyl) methane, 1,2-bis ( 4
-Hydroxyphenyl) ethane, 1,1-bis (4-hydroxy-2-chlorophenyl) ethane, 1,1-bis (3-methyl-4-hydroxyphenyl) ethane, 1,
3-bis (3-methyl-4-hydroxyphenyl) propane, 2,2-bis (3-methyl-4-hydroxyphenyl) propane, 2,2-bis (2-isopropyl-4
-Hydroxyphenyl) propane, 2,2-bis (4-
(Hydroxynaphthyl) propane, 2,2-bis (4-hydroxyphenyl) pentane, 3,3-bis (4-hydroxyphenyl) pentane, 2,2-bis (4-hydroxyphenyl) heptane, bis (4-hydroxyphenyl) ) Phenylmethane, bis (4-hydroxyphenyl)
Cyclohexylmethane, 1,2-bis (4-hydroxyphenyl) -1,2-diphenylpropane, 2,2-bis (4-hydroxyphenyl) -1-phenylpropane and the like are preferred.
【0022】特に好ましいポリヒドロキシエーテル樹脂
としては、下記構造式を有する2,2−ビス(4−ヒド
ロキシフェニル)プロパン及びエピクロロヒドリンから
誘導される縮合ポリマーが挙げられる。このポリヒドロ
キシエーテル樹脂は数平均分子量(ゲルパーミエーショ
ンクロマトグラフで測定し標準ポリスチレン換算したも
の)が10000〜20000であることが好ましく、
14000〜16000であることがより好ましい。こ
のようなポリヒドロキシエーテル樹脂はユニオンカーバ
イド社からフェノキシ樹脂(商品名 UCAR Phe
noxy PKKH、PKHJ又はPKFE)として市
販されている。Particularly preferred polyhydroxyether resins include condensation polymers derived from 2,2-bis (4-hydroxyphenyl) propane and epichlorohydrin having the following structural formula. The polyhydroxyether resin preferably has a number average molecular weight (measured by gel permeation chromatography and converted to standard polystyrene) of 10,000 to 20,000,
More preferably, it is 14000-16000. Such a polyhydroxy ether resin is a phenoxy resin (trade name UCAR Phe) from Union Carbide.
Noxy PKKH, PKHJ or PKFE).
【0023】[0023]
【化6】 カルボキシル基含有ポリヒドロキシエーテル樹脂化合物
は、上記のポリヒドロキシエーテル樹脂をテトラヒドロ
フラン、モノグライム、ジメチルホルムアミド等の可溶
性有機溶媒に溶解させ、必要によりトリエチルアミン、
トリエチレンジアミン等の触媒を用い、温度60〜11
5℃で飽和又は不飽和の多塩基酸無水物を付加反応させ
ることにより得られる。Embedded image The carboxyl group-containing polyhydroxyether resin compound is obtained by dissolving the above polyhydroxyether resin in a soluble organic solvent such as tetrahydrofuran, monoglyme, or dimethylformamide, and if necessary, triethylamine.
Using a catalyst such as triethylenediamine, at a temperature of 60 to 11
It is obtained by performing an addition reaction of a saturated or unsaturated polybasic anhydride at 5 ° C.
【0024】この反応の際、一般式(I)で示されるポ
リヒドロキシエーテル樹脂中の水酸基に対して飽和又は
不飽和の多塩基酸無水物を当量比(酸無水物基/水酸
基)が0.08〜0.8の範囲になるように反応させる
ことが必要である。この当量比が0.08未満では、現
像残りが生じ、この当量比が0.8を超えると耐めっき
液性が低下する。In this reaction, the equivalent ratio (acid anhydride group / hydroxyl group) of the polybasic anhydride saturated or unsaturated with respect to the hydroxyl group in the polyhydroxyether resin represented by the general formula (I) is 0. It is necessary to make the reaction be in the range of 08 to 0.8. When the equivalent ratio is less than 0.08, development residue occurs, and when the equivalent ratio exceeds 0.8, the plating solution resistance decreases.
【0025】上記のポリヒドロキシエーテル樹脂中の水
酸基に反応させる飽和又は不飽和の多塩基酸無水物の例
としては、無水フタル酸、無水テトラヒドロフタル酸、
無水ヘキサヒドロフタル酸、無水メチルテトラヒドロフ
タル酸、無水メチル2置換ブテニルテトラヒドロフタル
酸、無水イタコン酸、無水コハク酸、無水シトラコン
酸、無水アルケニル酸、無水ドデセニルコハク酸、無水
トリカルバリル酸、無水マレイン酸、無水マレイン酸の
リノレイン酸付加物、無水クロレンド酸、メチルシクロ
ペンタジエンの無水マレイン酸付加物、無水アルキル化
エンドアルキレンテトラヒドロフタル酸、無水トリメリ
ット酸等を挙げることができる。Examples of the saturated or unsaturated polybasic anhydride to be reacted with the hydroxyl group in the above polyhydroxyether resin include phthalic anhydride, tetrahydrophthalic anhydride,
Hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl 2-substituted butenyltetrahydrophthalic anhydride, itaconic anhydride, succinic anhydride, citraconic anhydride, alkenyl anhydride, dodecenyl succinic anhydride, tricarballylic anhydride, maleic anhydride Linoleic acid adduct of maleic anhydride, chlorendic anhydride, maleic anhydride adduct of methylcyclopentadiene, alkylated endoalkylenetetrahydrophthalic acid, trimellitic anhydride and the like.
【0026】なお、密着性、耐めっき液性の点から、飽
和又は不飽和の多塩基酸無水物の他に、更に、エチレン
性不飽和基とイソシアネート基をそれぞれ1個有する化
合物(例えば、(メタ)アクリロイルイソシアネート、
(メタ)アクリル酸エチルイソシアネート等)を一般式
(I)で示される繰り返し単位を有するポリヒドロキシ
エーテル樹脂の水酸基に反応させてもよい。この場合、
当量比(イソシアネート基/水酸基)を0.1〜0.5
の範囲として反応させることが好ましい。この当量比が
0.1未満では、密着性、耐めっき液性等の向上効果が
不十分となる傾向があり、0.5を超えるとゲル化する
傾向がある。From the viewpoint of adhesion and plating solution resistance, in addition to a saturated or unsaturated polybasic acid anhydride, a compound having one ethylenically unsaturated group and one isocyanate group (for example, ( (Meth) acryloyl isocyanate,
(Meth) ethyl acrylate isocyanate) may be reacted with a hydroxyl group of a polyhydroxyether resin having a repeating unit represented by the general formula (I). in this case,
The equivalent ratio (isocyanate group / hydroxyl group) is 0.1 to 0.5
It is preferable to carry out the reaction within the range. If the equivalent ratio is less than 0.1, the effect of improving adhesion and plating solution resistance tends to be insufficient, and if it exceeds 0.5, gelation tends to occur.
【0027】このようにして得られた(A)成分の使用
量は、(A)成分及び(B)成分の総量100重量部に
対して、20〜90重量部とするのが好ましい。(A)
成分の使用量が20重量部未満では、現像性、はんだ耐
熱性等が不良となる傾向がある。また、90重量部を超
えると、光感度、解像度、耐めっき液性等が低下する傾
向がある。The amount of the component (A) thus obtained is preferably 20 to 90 parts by weight based on 100 parts by weight of the total of the components (A) and (B). (A)
If the amount of the component is less than 20 parts by weight, the developability, solder heat resistance, and the like tend to be poor. If it exceeds 90 parts by weight, light sensitivity, resolution, plating solution resistance, and the like tend to decrease.
【0028】本発明の感光性樹脂組成物を構成する末端
にエチレン性不飽和基を少なくとも1個有する光重合性
不飽和化合物である(B)成分としては、例えば、ジシ
クロペンテニル(メタ)アクリレート、テトラヒドロフ
ルフリル(メタ)アクリレート、ベンジル(メタ)アク
リレート、多価アルコールにα,β−不飽和カルボン酸
を反応させて得られる化合物(ポリエチレングリコール
ジ(メタ)アクリレート(エチレン基の数が2〜14の
もの)、トリメチロールプロパンジ(メタ)アクリレー
ト、トリメチロールプロパントリ(メタ)アクリレー
ト、トリメチロールプロパンエトキシトリ(メタ)アク
リレート、トリメチロールプロパンプロポキシトリ(メ
タ)アクリレート、テトラメチロールメタントリ(メ
タ)アクリレート、テトラメチロールメタンテトラ(メ
タ)アクリレート、ポリプロピレングリコールジ(メ
タ)アクリレート(プロピレン基の数が2〜14のも
の)、ジペンタエリスリトールペンタ(メタ)アクリレ
ート、ジペンタエリスリトールヘキサ(メタ)アクリレ
ート等、ビスフェノールAポリオキシエチレンジ(メ
タ)アクリレート、例えば、ビスフェノールAジオキシ
エチレンジ(メタ)アクリレート、ビスフェノールAト
リオキシエチレンジ(メタ)アクリレート、ビスフェノ
ールAデカオキシエチレンジ(メタ)アクリレート
等)、グリシジル基含有化合物にα,β−不飽和カルボ
ン酸を付加して得られる化合物(トリメチロールプロパ
ントリグリシジルエーテルトリアクリレート、ビスフェ
ノールAジグリシジルエーテルジアクリレート等)、多
価カルボン酸(無水フタル酸等)と水酸基及びエチレン
性不飽和基を有する化合物(β−ヒドロキシエチル(メ
タ)アクリレート等)とのエステル化物、アクリル酸若
しくはメタクリル酸のアルキルエステル((メタ)アク
リル酸メチルエステル、(メタ)アクリル酸エチルエス
テル、(メタ)アクリル酸ブチルエステル、(メタ)ア
クリル酸2−エチルヘキシルエステル等)、ウレタン
(メタ)アクリレート(トリレンジイソシアネートと2
−ヒドロキシエチル(メタ)アクリル酸エステルとの反
応物、トリメチルヘキサメチレンジイソシアネートとシ
クロヘキサンジメタノールと2−ヒドロキシエチル(メ
タ)アクリル酸エステルとの反応物等)などを挙げるこ
とができる。As the component (B), which is a photopolymerizable unsaturated compound having at least one terminal ethylenically unsaturated group, which constitutes the photosensitive resin composition of the present invention, for example, dicyclopentenyl (meth) acrylate A compound obtained by reacting an α, β-unsaturated carboxylic acid with tetrahydrofurfuryl (meth) acrylate, benzyl (meth) acrylate, or a polyhydric alcohol (polyethylene glycol di (meth) acrylate (where the number of ethylene groups is 2 to 2). 14), trimethylolpropanedi (meth) acrylate, trimethylolpropanetri (meth) acrylate, trimethylolpropaneethoxytri (meth) acrylate, trimethylolpropanepropoxytri (meth) acrylate, tetramethylolmethanetri (meth) acrylate Acrylate, Tet Bisphenol A such as ramethylol methanetetra (meth) acrylate, polypropylene glycol di (meth) acrylate (having 2 to 14 propylene groups), dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate Polyoxyethylene di (meth) acrylate, for example, bisphenol A dioxyethylene di (meth) acrylate, bisphenol A trioxyethylene di (meth) acrylate, bisphenol A decaoxyethylene di (meth) acrylate, etc., glycidyl group-containing compound (Trimethylolpropane triglycidyl ether triacrylate, bisphenol A diglycidyl ether diacrylate, etc.) obtained by adding α, β-unsaturated carboxylic acid to Of a polyvalent carboxylic acid (such as phthalic anhydride) with a compound having a hydroxyl group and an ethylenically unsaturated group (such as β-hydroxyethyl (meth) acrylate), an alkyl ester of acrylic acid or methacrylic acid ((meth) acrylic acid) Methyl ester, (meth) acrylic acid ethyl ester, (meth) acrylic acid butyl ester, (meth) acrylic acid 2-ethylhexyl ester, etc.), urethane (meth) acrylate (tolylene diisocyanate and 2
A reaction product of -hydroxyethyl (meth) acrylate, a reaction product of trimethylhexamethylene diisocyanate, cyclohexane dimethanol and 2-hydroxyethyl (meth) acrylate, and the like.
【0029】(B)成分の使用量は、(A)成分及び
(B)成分の総量100重量部に対して、10〜80重
量部とするのが好ましい。(B)成分の使用量が10重
量部未満では、光感度、解像度、耐めっき液性等が低下
する傾向がある。また、80重量部を超えると、現像
性、はんだ耐熱性等が不良となる傾向がある。The amount of component (B) used is preferably 10 to 80 parts by weight based on 100 parts by weight of the total of components (A) and (B). When the use amount of the component (B) is less than 10 parts by weight, the light sensitivity, resolution, plating solution resistance, and the like tend to decrease. If the amount exceeds 80 parts by weight, the developability, solder heat resistance, and the like tend to be poor.
【0030】本発明の感光性樹脂組成物は、(C)成分
の活性光線により遊離ラジカルを生成する光重合開始剤
を含有する。(C)成分の使用量は上記(A)成分及び
(B)の総量100重量部に対し、0.1〜20重量部
とするのが好ましい。光重合開始剤は0.1重量部未満
では光感度が低く、20重量部を超えると形成されるネ
ガティブパターンの形状が悪くなる傾向がある。The photosensitive resin composition of the present invention contains a photopolymerization initiator which generates free radicals by the actinic ray of the component (C). The amount of component (C) used is preferably 0.1 to 20 parts by weight based on 100 parts by weight of the total of components (A) and (B). If the photopolymerization initiator is less than 0.1 part by weight, the photosensitivity is low, and if it exceeds 20 parts by weight, the shape of the negative pattern formed tends to be poor.
【0031】(C)成分の光重合開始剤は2,4,5−
トリアリールイミダゾール二量体を、必須成分として含
有する。このようなものとしては、例えば、2,4,5
−トリフェニルイミダゾール二量体、2−(o−クロロ
フェニル)−4,5−ジフェニルイミダゾール二量体、
2−(o−フルオロフェニル)−4,5−ジフェニルイ
ミダゾール二量体、2−(o−メトキシフェニル)−
4,5−ジフェニルイミダゾール二量体、2,4−ジ
(p−メトキシフェニル)−5−フェニルイミダゾール
二量体、2−(o−エトキシフェニル)−4,5−ジフ
ェニルイミダゾール二量体、2,4−ジ(p−エトキシ
フェニル)−5−フェニルイミダゾール二量体などが挙
げられ、これらの化合物は、単独で又は2種類以上を組
み合わせて使用してもよい。The photopolymerization initiator of the component (C) is 2,4,5-
It contains a triarylimidazole dimer as an essential component. Such materials include, for example, 2, 4, 5
-Triphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer,
2- (o-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o-methoxyphenyl)-
4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5-phenylimidazole dimer, 2- (o-ethoxyphenyl) -4,5-diphenylimidazole dimer, , 4-di (p-ethoxyphenyl) -5-phenylimidazole dimer and the like, and these compounds may be used alone or in combination of two or more.
【0032】2,4,5−トリアリールイミダゾール二
量体の(C)成分中の含有割合は0.1〜10重量%と
することが好ましい。The content of the 2,4,5-triarylimidazole dimer in the component (C) is preferably from 0.1 to 10% by weight.
【0033】また、本発明においては、光重合開始剤と
して更に一般式(III)In the present invention, the photopolymerization initiator may further have the general formula (III):
【0034】[0034]
【化7】 (式中のR10及びR11は、それぞれ水素原子又はアルキ
ル基であり、それぞれ同一でもよく、互いに異なっても
よい。)で表される化合物を含有させることが好まし
い。一般式(III)の化合物としては、例えば、ベン
ジルジメチルケタール、ベンジルジエチルケタール、ベ
ンジルジプロピルケタール、ベンジルジイソブチルケタ
ール、ベンジルジイソプロピルケタール等のベンジルケ
タール類が挙げられる。これらの化合物は、単独で又は
2種類以上を組み合わせて使用してもよい。Embedded image (Wherein R 10 and R 11 in the formula are each a hydrogen atom or an alkyl group, and may be the same or different from each other). Examples of the compound of the general formula (III) include benzyl ketals such as benzyl dimethyl ketal, benzyl diethyl ketal, benzyl dipropyl ketal, benzyl diisobutyl ketal, and benzyl diisopropyl ketal. These compounds may be used alone or in combination of two or more.
【0035】一般式(III)で表される化合物の
(C)成分中の含有割合は0.1〜10重量%とするこ
とが好ましい。The content of the compound represented by the formula (III) in the component (C) is preferably 0.1 to 10% by weight.
【0036】更に(C)成分として使用しうる光重合開
始剤としては、例えば、N,N′−テトラメチル−4,
4′−ジアミノベンゾフェノン(ミヒラーケトン)、
N,N′−テトラエチル−4,4′−ジアミノベンゾフ
ェノン等のベンゾフェノン類、2,2′−ジメトキシ−
2−フェニルアセトフェノン、p−tert−ブチルジ
クロロアセトフェノン、p−ジメチルアミノアセトフェ
ノン等のアセトフェノン類、2,4−ジメチルチオキサ
ントン、2,4−ジイソプロピルチオキサントン等のキ
サントン類、あるいはヒドロキシシクロヘキシルフェニ
ルケトン、1−(4−イソプロピルフェニル)−2−ヒ
ドロキシ−2−メチルプロパン−1−オン、2−ヒドロ
キシ−2−メチル−1−フェニルプロパン−1−オン等
が挙げられる。これらの化合物は、単独で又は2種類以
上を組み合わせて使用してもよい。Examples of the photopolymerization initiator which can be used as the component (C) include, for example, N, N'-tetramethyl-4,
4'-diaminobenzophenone (Michler's ketone),
Benzophenones such as N, N'-tetraethyl-4,4'-diaminobenzophenone, 2,2'-dimethoxy-
Acetophenones such as 2-phenylacetophenone, p-tert-butyldichloroacetophenone and p-dimethylaminoacetophenone; xanthones such as 2,4-dimethylthioxanthone and 2,4-diisopropylthioxanthone; or hydroxycyclohexylphenyl ketone, 1- ( 4-isopropylphenyl) -2-hydroxy-2-methylpropan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one and the like. These compounds may be used alone or in combination of two or more.
【0037】本発明に(D)成分として用いられる一般
式(II)で示される化合物としては、例えば、スミジ
ュールBL−3175(住友バイエルウレタン(株)商
品名)が入手可能で一般式(II)に該当する。As the compound represented by the general formula (II) used as the component (D) in the present invention, for example, Sumidur BL-3175 (trade name of Sumitomo Bayer Urethane Co., Ltd.) is available, and the compound represented by the general formula (II) ).
【0038】一般式(II)で示される化合物におい
て、R4、R5及びR6は、好ましくは炭素数1〜15の
アルキレン基、該アルキレン基の水素原子がメチル基、
エチル基等の炭素数1〜6のアルキル等の置換基で置換
された置換アルキレン基、アルキレンオキシ基、炭素数
8〜20のアリーレン基、芳香環の水素原子が水酸基、
アミノ基、炭素数1〜4のアルキル基等の置換基で置換
された置換アリーレン基である。R7、R8及びR9を形
成する活性水素を持つ化合物としては、ケトオキシム等
のオキシム類、ε−カプロラクタム等のラクタム類、メ
タノール、エタノール、イソプロピルアルコール、エト
キシエタノール等のアルカノール類、フェノール、o−
ニトロフェノール、ハロゲン化フェノール、o−,m
−,p−クレゾール等のフェノール類、アセチルアセト
ン等の活性メチレン化合物が挙げられる。これらの活性
化合物はR4、R5、R6に結合したイソシアネート基と
反応して−NHCO−結合を介してR7、R8、R9と結
合している。R7、R8、R9の好ましい具体例として
は、−ON=CCH3C2H5(イソシアネートと活性水
素を持つ化合物としてケトオキシムが反応した際に得ら
れる残基)である。In the compound represented by formula (II), R 4 , R 5 and R 6 are preferably an alkylene group having 1 to 15 carbon atoms, wherein the hydrogen atom of the alkylene group is a methyl group,
A substituted alkylene group substituted with a substituent such as an alkyl group having 1 to 6 carbon atoms such as an ethyl group, an alkyleneoxy group, an arylene group having 8 to 20 carbon atoms, a hydrogen atom of an aromatic ring having a hydroxyl group,
A substituted arylene group substituted with a substituent such as an amino group or an alkyl group having 1 to 4 carbon atoms. Examples of the compound having an active hydrogen forming R 7 , R 8 and R 9 include oximes such as ketoxime, lactams such as ε-caprolactam, alkanols such as methanol, ethanol, isopropyl alcohol and ethoxyethanol, phenol and o. −
Nitrophenol, halogenated phenol, o-, m
And phenols such as-, p-cresol, and active methylene compounds such as acetylacetone. These active compounds react with isocyanate groups bonded to R 4 , R 5 , and R 6 and are bonded to R 7 , R 8 , and R 9 via an —NHCO— bond. A preferred specific example of R 7 , R 8 , and R 9 is —ONCHCCH 3 C 2 H 5 (a residue obtained when a ketoxime is reacted as a compound having isocyanate and active hydrogen).
【0039】(D)成分の使用量は、(A)成分及び
(B)成分の総量100重量部に対して1〜30重量部
とすることが好ましい。(D)成分が1重量部未満で
は、耐めっき性、はんだ耐熱性が不十分となる傾向があ
り、30重量部を超えるとパターン形状が悪くなった
り、無電解めっき液を汚染する。The amount of the component (D) is preferably 1 to 30 parts by weight based on 100 parts by weight of the total of the components (A) and (B). If the component (D) is less than 1 part by weight, plating resistance and solder heat resistance tend to be insufficient, and if it exceeds 30 parts by weight, the pattern shape becomes poor or the electroless plating solution is contaminated.
【0040】本発明の感光性樹脂組成物は、更に他の副
次的成分を含有してもよい。そのような副次的成分とし
ては、例えば、熱重合防止剤、染料、顔料、塗工性向上
剤、密着性向上剤などが挙げられ、これらの選択は、通
常の感光性樹脂組成物と同様の考慮の下に行われる。副
次的な成分として、本発明の目的を損なわない範囲で少
量のエポキシ樹脂を含有することもできる。The photosensitive resin composition of the present invention may further contain other secondary components. Examples of such secondary components include, for example, a thermal polymerization inhibitor, a dye, a pigment, a coatability improver, an adhesion improver, and the like, and the selection thereof is the same as that of a normal photosensitive resin composition. It is performed under the consideration of. As a secondary component, a small amount of an epoxy resin may be contained as long as the object of the present invention is not impaired.
【0041】次に、本発明の感光性エレメントについて
詳細に説明する。Next, the photosensitive element of the present invention will be described in detail.
【0042】本発明の感光性エレメントは、支持体フィ
ルム上に前記感光性樹脂組成物の層を積層して形成する
ことにより得られる。支持体フィルム上への感光性樹脂
組成物層の形成は、常法により行うことができる。例え
ば、感光性樹脂組成物をメチルエチルケトン、塩化メチ
レン等の有機溶剤に均一に溶解させ、この溶液を該支持
体フィルム上にナイフコート法、ロールコート法、スプ
レーコート法、スピンコート法等で塗布し、乾燥するこ
とにより行われる。感光層中の残存溶剤量は、特性保持
のために2重量%以下に抑えることが好ましい。The photosensitive element of the present invention can be obtained by laminating a layer of the photosensitive resin composition on a support film. The formation of the photosensitive resin composition layer on the support film can be performed by a conventional method. For example, the photosensitive resin composition is uniformly dissolved in an organic solvent such as methyl ethyl ketone or methylene chloride, and this solution is applied on the support film by knife coating, roll coating, spray coating, spin coating, or the like. And drying. The amount of the residual solvent in the photosensitive layer is preferably suppressed to 2% by weight or less for maintaining the characteristics.
【0043】本発明に用いられる支持体フィルムは、感
光性エレメントの製造時に必要な耐熱性、耐溶剤性を有
していることが好ましいが、テフロンフィルム、離型紙
等の離型性フィルムを一時的な支持体フィルムとし、こ
の上に感光性樹脂組成物の層を形成した後、この層の上
に耐熱性あるいは耐溶剤性の低いフィルムをラミネート
し、前記一時的な支持体フィルムを剥離して耐熱性ある
いは耐溶剤性の低い支持体フィルムを有する感光性エレ
メントを製造することもできる。また、支持体フィルム
は、活性光線に対して透明であっても不透明であっても
よい。使用しうる支持体フィルムの例として、ポリエス
テルフィルム、ポリイミドフィルム、ポリアミドイミド
フィルム、ポリプロピレンフィルム、ポリスチレンフィ
ルム等の公知のフィルムを挙げることができる。The support film used in the present invention preferably has the heat resistance and solvent resistance required for the production of the photosensitive element. However, the release film such as a Teflon film or release paper may be used temporarily. After forming a layer of a photosensitive resin composition thereon, a film having low heat resistance or solvent resistance is laminated on this layer, and the temporary support film is peeled off. It is also possible to produce a photosensitive element having a support film having low heat resistance or low solvent resistance. Further, the support film may be transparent or opaque to actinic rays. Examples of the support film that can be used include known films such as a polyester film, a polyimide film, a polyamideimide film, a polypropylene film, and a polystyrene film.
【0044】長尺の感光性エレメントを製造する場合に
は、製造の最終段階で該エレメントをロール状に巻き取
る。この場合、感圧性粘着テープ等で公知の方法を用
い、背面処理した支持体フィルムを用いることにより、
ロール状に巻き取ったときの感光性樹脂組成物の層の支
持体フィルム背面への転着を防ぐことができる。同じ目
的、更に塵の付着を防ぐ目的で、感光性エレメントの感
光性樹脂組成物の層の上に剥離可能なカバーフィルムを
積層することが好ましい。When a long photosensitive element is manufactured, the element is wound into a roll at the final stage of the manufacturing. In this case, using a known method with a pressure-sensitive adhesive tape or the like, by using a backing-treated support film,
The transfer of the layer of the photosensitive resin composition to the back surface of the support film when the film is wound into a roll can be prevented. For the same purpose, and further for the purpose of preventing dust from adhering, it is preferable to laminate a releasable cover film on the photosensitive resin composition layer of the photosensitive element.
【0045】剥離可能なカバーフィルムの具体例として
は、ポリエチレンフィルム、ポリプロピレンフィルム、
テフロンフィルム、表面処理した紙などがあり、カバー
フィルムを剥離するときに感光性樹脂組成物の層と支持
体フィルムとの接着力よりも感光性樹脂組成物の層とカ
バーフィルムとの接着力がより小さいものであればよ
い。Specific examples of the peelable cover film include a polyethylene film, a polypropylene film,
Teflon film, surface-treated paper, etc., when the cover film is peeled off, the adhesive strength between the photosensitive resin composition layer and the cover film is higher than the adhesive strength between the photosensitive resin composition layer and the support film. What is necessary is just a smaller thing.
【0046】本発明の感光性エレメントを構成する感光
性樹脂組成物の層の厚さは、無電解めっきにより析出さ
せるめっき銅の厚さによって異なるが、通常10〜10
0μmとされる。The thickness of the layer of the photosensitive resin composition constituting the photosensitive element of the present invention varies depending on the thickness of the plated copper deposited by electroless plating.
0 μm.
【0047】本発明の感光性樹脂組成物を溶液として、
基板上に塗布し、乾燥後、あるいは感光性エレメントと
して、その感光性樹脂組成物の層を基板上に積層した
後、像的に露光し、現像してめっきレジストが形成され
る。The photosensitive resin composition of the present invention is used as a solution,
After coating on a substrate and drying, or as a photosensitive element, after laminating a layer of the photosensitive resin composition on the substrate, it is imagewise exposed and developed to form a plating resist.
【0048】次に、本発明の感光性エレメントの使用方
法について説明する。本発明の感光性エレメントの印刷
配線基板上への積層は容易である。すなわち、カバーフ
ィルムのない場合にはそのまま、カバーフィルムのある
場合はカバーフィルムを剥離して又は剥離しながら、加
熱、加圧積層する。加熱、加圧積層は、印刷配線板製造
業者では周知の常圧ラミネータを用いて行うことができ
る。基板が、導体配線ラインの形成された印刷配線板の
ように10μm以上の凹凸のあるものの場合には、減圧
又は真空下で積層することが好ましい。Next, a method for using the photosensitive element of the present invention will be described. Lamination of the photosensitive element of the present invention on a printed wiring board is easy. That is, when there is no cover film, heating and pressure lamination are performed as it is, and when there is a cover film, the cover film is peeled off or peeled off. Heating and pressure lamination can be performed using a normal-pressure laminator known to a printed wiring board manufacturer. When the substrate has irregularities of 10 μm or more, such as a printed wiring board on which conductor wiring lines are formed, it is preferable to laminate under reduced pressure or vacuum.
【0049】このための装置としては、特公昭53−3
1670号公報、特公昭55−13341号公報等に記
載されている積層装置などがある。An apparatus for this purpose is disclosed in Japanese Examined Patent Publication No. 53-3
There is a laminating apparatus described in Japanese Patent Publication No. 1670 and Japanese Patent Publication No. 55-13341.
【0050】アディティブ法では、基板として、通常絶
縁性基板が用いられる。絶縁性基板としては、紙フェノ
ール、ガラスエポキシ等の積層板、鉄ホウロウ基板、ア
ルミ板等の両面にエポキシ樹脂絶縁層を形成した基板等
の金属芯入り基板などを使用することができる。これら
の基板は、穴あけ後にめっき触媒を含む溶液に浸漬さ
れ、スルーホール内壁にめっき触媒をつけることもでき
る。このようなめっき触媒溶液としては、日立化成工業
(株)製増感剤HS−101B等が使用できる。基板の
表面には、めっき触媒の付着を良好とするためあるいは
析出する無電解めっき銅の基板に対する密着性を良好と
するため等に接着剤層を塗布することが好ましい。In the additive method, an insulating substrate is usually used as a substrate. As the insulating substrate, a laminated substrate made of paper phenol, glass epoxy, or the like, an iron enameled substrate, a substrate having a metal core such as an aluminum plate or the like having an epoxy resin insulating layer formed on both surfaces thereof, or the like can be used. These substrates may be immersed in a solution containing a plating catalyst after drilling, and the plating catalyst may be applied to the inner wall of the through hole. As such a plating catalyst solution, a sensitizer HS-101B manufactured by Hitachi Chemical Co., Ltd. or the like can be used. It is preferable to apply an adhesive layer to the surface of the substrate to improve the adhesion of the plating catalyst or to improve the adhesion of the deposited electroless plated copper to the substrate.
【0051】接着剤としては、フェノール変性ニトリル
ゴム系接着剤等のアディティブ法用接着剤として知られ
ているものが使用できる。電食性及び耐熱性に優れる点
で特開昭61−276875号公報に示されているエポ
キシ樹脂、エポキシ変性ポリイミド樹脂、ポリイミド樹
脂、フェノール樹脂等の未硬化耐熱性樹脂中に、エポキ
シ樹脂、ポリエステル樹脂、ビスマレイミド−トリアジ
ン樹脂等の硬化処理された耐熱性樹脂の微粉末を分散し
た接着剤の使用も好ましい。また、基板自体の表面に微
細な凹凸を形成することにより、めっき銅の基板に対す
る密着性を確保する方法もあり、この場合には接着剤層
を特に必要としない。As the adhesive, those known as an additive for an additive method such as a phenol-modified nitrile rubber-based adhesive can be used. Among the uncured heat-resistant resins such as epoxy resin, epoxy-modified polyimide resin, polyimide resin, and phenol resin described in JP-A-61-276875 in terms of excellent electrolytic corrosion resistance and heat resistance, epoxy resin and polyester resin It is also preferable to use an adhesive in which fine powder of a heat-resistant resin cured such as a bismaleimide-triazine resin is dispersed. In addition, there is a method of ensuring the adhesion of plated copper to the substrate by forming fine irregularities on the surface of the substrate itself. In this case, an adhesive layer is not particularly required.
【0052】内部にPd化合物等の無電解銅めっきの触
媒となる化合物を分散させた積層板もスルーホール内壁
に無電解めっき銅を析出させる場合などに好ましい基板
である。めっき触媒を内部に含んだガラスエポキシ積層
板の表面にめっき触媒を含んだ接着剤を形成した基板と
して、日立化成工業(株)製積層板ACL−E−161
などがある。このような基板を使用する場合には、新た
にめっき触媒を付着させる工程は不要になる。めっき触
媒の付着性を良好とするため、あるいは析出する無電解
めっき銅の密着性を良好とするため、無電解めっき処理
の前に接着剤層表面を粗化することが好ましい。粗化方
法としては、重クロム酸ナトリウム又はクロム酸などを
含む酸性溶液などに浸漬する方法があるが、公知の通
り、粗化工程は無電解銅めっき工程の前であれば、感光
性エレメントを積層する前であっても、後で述べるめっ
きレジストパターン形成後であってもよい。A laminate in which a compound serving as a catalyst for electroless copper plating such as a Pd compound is dispersed is also a preferable substrate when electroless plated copper is deposited on the inner wall of the through hole. As a substrate in which an adhesive containing a plating catalyst is formed on the surface of a glass epoxy laminate containing a plating catalyst therein, a laminated plate ACL-E-161 manufactured by Hitachi Chemical Co., Ltd.
and so on. When such a substrate is used, a step of newly attaching a plating catalyst becomes unnecessary. It is preferable to roughen the surface of the adhesive layer before the electroless plating treatment in order to improve the adhesion of the plating catalyst or the adhesion of the electroless plated copper to be deposited. As a roughening method, there is a method of dipping in an acidic solution containing sodium dichromate or chromic acid, etc., as is well known, the roughening step is performed before the electroless copper plating step, and the photosensitive element is It may be before the lamination or after the formation of the plating resist pattern described later.
【0053】積層後の露光及び現像処理は、常法により
行いうる。すなわち、支持体フィルムが活性光線に不透
明である場合は、支持体フィルムを剥離した後、高圧水
銀灯、超高圧水銀灯等の光源を用い、ネガマスクを通し
て像的に露光する。露光前後の50〜100℃での加熱
処理は、基板と感光性樹脂層との密着性を向上するため
に好ましい。Exposure and development after lamination can be performed by a conventional method. That is, when the support film is opaque to actinic rays, the support film is peeled off and imagewise exposed through a negative mask using a light source such as a high-pressure mercury lamp or an ultra-high-pressure mercury lamp. Heat treatment at 50 to 100 ° C. before and after exposure is preferable for improving the adhesion between the substrate and the photosensitive resin layer.
【0054】現像処理に用いられる現像液としては、1
〜90容積%の有機溶剤を含有するアルカリ水溶液を現
像液として、像的に活性光線の照射された基板を浸漬す
るか、又は現像液をスプレーする等して行える。The developing solution used in the developing treatment includes 1
Using an aqueous alkaline solution containing an organic solvent of about 90% by volume as a developing solution, it can be carried out by immersing the substrate irradiated with actinic rays imagewise or by spraying the developing solution.
【0055】このようにしてめっきレジストパターンを
形成した後、高圧水銀灯、超高圧水銀灯等の光源を用い
て、活性光線を再照射することが好ましく、めっきレジ
ストの耐薬品性が向上する。紫外線の照射量としては
0.2〜10J/cm2とすることが好ましく、この照
射時に60〜150℃に加熱することが好ましい。After forming the plating resist pattern in this manner, it is preferable to re-irradiate the active light with a light source such as a high-pressure mercury lamp or an ultra-high-pressure mercury lamp, thereby improving the chemical resistance of the plating resist. The irradiation amount of the ultraviolet rays is preferably 0.2 to 10 J / cm 2, and it is preferable to heat to 60 to 150 ° C. during this irradiation.
【0056】更に、活性光線の再照射後、加熱処理を施
すことが望ましい。加熱処理を行うことにより、耐無電
解銅めっき液性やはんだ耐熱性が著しく向上する。加熱
温度、加熱時間としては、例えば、それぞれ140〜2
20℃、30〜90分が挙げられる。Further, after the re-irradiation of the actinic ray, it is desirable to perform a heat treatment. By performing the heat treatment, the electroless copper plating solution resistance and solder heat resistance are significantly improved. The heating temperature and the heating time are, for example, 140 to 2 respectively.
20 ° C. for 30 to 90 minutes.
【0057】活性光線の再照射なしに加熱処理のみの工
程を施してもよい。A step of only heating treatment may be performed without re-irradiation with actinic rays.
【0058】また、本発明の感光性樹脂組成物の溶液を
ディップコート法、フローコート法等の方法で基板に直
接塗布し、溶剤を乾燥後、直接あるいはポリエステルフ
ィルム等の活性光線に透明なフィルムを積層後、前記の
感光性エレメントの場合と同様にして、ネガマスクを通
して像的に露光し、現像し、活性光線の露光及び加熱処
理をすることによって前記と同様に特性の優れためっき
レジストが形成できる。A solution of the photosensitive resin composition of the present invention is directly applied to a substrate by a dip coating method, a flow coating method or the like, and the solvent is dried. After lamination, in the same manner as in the case of the photosensitive element described above, imagewise exposed through a negative mask, developed, exposed to actinic rays and subjected to heat treatment to form a plating resist having excellent properties as described above. it can.
【0059】[0059]
【実施例】以下、本発明の実施例及びその比較例によっ
て本発明を更に具体的に説明するが、本発明はこれらの
実施例に限定されるものではない。なお、実施例及び比
較例中の「部」は特に断らない限り、重量部を示す。EXAMPLES Hereinafter, the present invention will be described more specifically with reference to Examples of the present invention and Comparative Examples thereof, but the present invention is not limited to these Examples. In the examples and comparative examples, “parts” indicates parts by weight unless otherwise specified.
【0060】合成例1 温度計、撹拌装置、冷却管、乾燥空気導入管及び滴下器
の付いた、加熱及び冷却可能な容積約1リットルの反応
容器に表1のAを入れ、115℃に昇温し、B及びCを
添加した。B及びCの添加後115℃で約15時間反応
させた後、室温に冷却してカルボキシル基含有ポリヒド
ロキシエーテル樹脂化合物の溶液(A−1)を得た。な
お、合成の際反応の当量比は、(酸無水物基/水酸基)
=0.2である。Synthesis Example 1 A in Table 1 was placed in a reaction vessel equipped with a thermometer, a stirrer, a cooling pipe, a dry air introduction pipe, and a dropper and capable of heating and cooling and having a capacity of about 1 liter, and heated to 115 ° C. Warm and add B and C. After the addition of B and C, the mixture was reacted at 115 ° C. for about 15 hours, and then cooled to room temperature to obtain a solution (A-1) of a carboxyl group-containing polyhydroxyether resin compound. The equivalent ratio of the reaction in the synthesis is (acid anhydride group / hydroxyl group)
= 0.2.
【0061】[0061]
【表1】 合成例2 合成例1において、Cを無水トリメリット酸16.9部
に代えて反応を行った以外は、合成例1と同様に操作す
ることによりカルボキシル基含有ポリヒドロキシエーテ
ル樹脂化合物の溶液(A−2)を得た。なお、合成の際
反応の当量比は、(酸無水物基/水酸基)=0.25で
ある。[Table 1] Synthesis Example 2 A solution of the carboxyl group-containing polyhydroxyether resin compound (A) was prepared in the same manner as in Synthesis Example 1 except that the reaction was performed in place of 16.9 parts of trimellitic anhydride. -2) was obtained. The equivalent ratio of the reaction in the synthesis is (acid anhydride group / hydroxyl group) = 0.25.
【0062】合成例3 温度計、撹拌装置、冷却管、乾燥空気導入管及び滴下器
の付いた、加熱及び冷却可能な容積約1リットルの反応
容器に表2のAを入れ、75℃に昇温し、反応温度を7
3〜75℃に保ちながら、0.5時間かけて均一にBを
滴下した。Bの滴下後75℃で約4時間反応を続けた。
次いで、反応系を100℃に降温し、C及びDを添加し
た。C及びDの添加後、100℃で約15時間反応させ
た後、室温に冷却してエチレン性不飽和基を有するカル
ボキシル基含有ポリヒドロキシエーテル樹脂化合物の溶
液(A−3)を得た。なお、合成の際反応の当量比は、
(イソシアネート基/水酸基)=0.25、(酸無水物
基/水酸基)=0.25である。Synthesis Example 3 A in Table 2 was placed in a reaction vessel equipped with a thermometer, a stirrer, a cooling pipe, a dry air introduction pipe, and a dropper and capable of heating and cooling and having a capacity of about 1 liter, and heated to 75 ° C. Warm and raise reaction temperature to 7
While maintaining the temperature at 3 to 75 ° C, B was dripped uniformly over 0.5 hours. After the addition of B, the reaction was continued at 75 ° C. for about 4 hours.
Next, the temperature of the reaction system was lowered to 100 ° C., and C and D were added. After the addition of C and D, the mixture was reacted at 100 ° C. for about 15 hours, and then cooled to room temperature to obtain a solution (A-3) of a carboxyl group-containing polyhydroxyether resin compound having an ethylenically unsaturated group. The equivalent ratio of the reaction during the synthesis is
(Isocyanate group / hydroxyl group) = 0.25, (acid anhydride group / hydroxyl group) = 0.25.
【0063】[0063]
【表2】 比較合成例 温度計、撹拌装置、冷却管、乾燥空気導入管及び滴下器
の付いた、加熱及び冷却可能な容積約1リットルの反応
容器に表3のAを入れ、75℃に昇温し、反応温度を7
3〜75℃に保ちながら、0.5時間かけて均一にBを
滴下した。Bの滴下後75℃で約4時間反応させた後、
室温に冷却してエチレン性不飽和基を有するポリヒドロ
キシエーテル樹脂化合物の溶液(A−4)を得た。な
お、合成の際反応の当量比は、(イソシアネート基/水
酸基)=0.25である。[Table 2] Comparative Synthesis Example A in Table 3 was placed in a reaction vessel having a capacity of about 1 liter capable of heating and cooling, equipped with a thermometer, a stirrer, a cooling pipe, a dry air introduction pipe, and a dropper, and heated to 75 ° C. Reaction temperature 7
While maintaining the temperature at 3 to 75 ° C, B was dripped uniformly over 0.5 hours. After reacting at 75 ° C. for about 4 hours after dropping B,
After cooling to room temperature, a solution (A-4) of a polyhydroxyether resin compound having an ethylenically unsaturated group was obtained. The equivalent ratio of the reaction in the synthesis is (isocyanate group / hydroxyl group) = 0.25.
【0064】[0064]
【表3】 実施例1〜4及び比較例1〜3 表4に示す材料を配合し溶液を得た。[Table 3] Examples 1-4 and Comparative Examples 1-3 The materials shown in Table 4 were blended to obtain solutions.
【0065】[0065]
【表4】 (注) A−1〜A−4:合成例で得られたポリヒドロキシエー
テル樹脂化合物の溶液 BPE−4:新中村化学工業社製NK−エステル、ビス
フェノールAポリオキシエチレンジメタクリレート C−1:ベンジルジメチルケタール C−2:2−(o−クロロフェニル)−4,5−ジフェ
ニルイミダゾール二量体 BL−3175:住友バイエルンウレタン社製ブロック
イソシアネートの商品名 MEK:メチルエチルケトン DMF:N,N−ジメチルホルムアミド 得られた感光性樹脂組成物の溶液を図1に示す装置を用
いて20μmの厚さのポリエチレンテレフタレートフィ
ルム12上に均一に塗布し、80〜110℃の熱風対流
式乾燥機7で約10分間乾燥して溶剤を除去した。感光
性樹脂組成物層の乾燥後の厚さは、約35μmであっ
た。感光性樹脂組成物層の上には、更に図1に示したよ
うにして厚さ約25μmのポリエチレンフィルム13を
保護フィルムとして貼り合わせ、本発明の感光性エレメ
ントを得た。[Table 4] (Note) A-1 to A-4: Solutions of the polyhydroxyether resin compounds obtained in the synthesis examples BPE-4: NK-ester manufactured by Shin-Nakamura Chemical Co., Ltd., bisphenol A polyoxyethylene dimethacrylate C-1: benzyl Dimethyl ketal C-2: 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer BL-3175: trade name of block isocyanate manufactured by Sumitomo Bayern Urethane Co., Ltd. MEK: methyl ethyl ketone DMF: N, N-dimethylformamide is obtained. The solution of the photosensitive resin composition was uniformly coated on a polyethylene terephthalate film 12 having a thickness of 20 μm using the apparatus shown in FIG. 1 and dried for about 10 minutes by a hot air convection dryer 7 at 80 to 110 ° C. To remove the solvent. The dried thickness of the photosensitive resin composition layer was about 35 μm. As shown in FIG. 1, a polyethylene film 13 having a thickness of about 25 μm was further adhered on the photosensitive resin composition layer as a protective film to obtain a photosensitive element of the present invention.
【0066】なお、図1において、1はポリエチレンテ
レフタレートフィルム繰り出しロール、2はフィードロ
ール、3はバッキングロール、4はドクターロール、9
及び10はロール、5はナイフ、6は感光性樹脂組成物
の溶液、8はポリエチレンフィルム繰り出しロール、1
1は感光性エレメント巻き取りロールである。In FIG. 1, 1 is a polyethylene terephthalate film feeding roll, 2 is a feed roll, 3 is a backing roll, 4 is a doctor roll, 9
And 10 are rolls, 5 is a knife, 6 is a solution of the photosensitive resin composition, 8 is a polyethylene film feeding roll, 1
1 is a photosensitive element winding roll.
【0067】得られた感光性エレメントの現像性、感光
特性、レジストの形成後の無電解めっき性、めっき析出
性及びはんだ耐熱性について下記の方法で評価し、結果
を表5に示す。The developability, photosensitive characteristics, electroless plating property after formation of the resist, plating deposition property and solder heat resistance of the obtained photosensitive element were evaluated by the following methods, and the results are shown in Table 5.
【0068】(1)現像性 日立化成工業(株)製アディティブ法用基板ACL−E
−168(Pd系めっき触媒含有ガラスエポキシ積層板
の両面に、めっき触媒を含有するフェノール変性ニトリ
ルゴム系接着剤を約30μmの厚さに塗布した基板)を
住友スリーエム社製スコッチブライトで研磨、水洗し、
80℃で15分乾燥した。この試験基板の両面に上記で
得られた感光性エレメントを日立エーアイシー社製A−
3000型ラミネータを用いてポリエチレンフィルムを
剥がしながら積層した。次に、ポリエチレンテレフタレ
ートフィルムを剥がした後、ジエチレングリコールモノ
−n−ブチルエーテル500ml、ホウ砂(Na2B4O
7・10H2O)8g、水500mlの割合で調製した半
水性現像液で40℃で40秒間スプレー現像した。現像
後、30倍の倍率の実体顕微鏡を用いて下記の評価基準
で評価した。 ○:現像性の良好なもの(基板表面に樹脂が全く残らな
いもの) ×:現像性の不良なもの(基板表面に樹脂が少し残るも
の) (2)感光特性 上記(1)と同様に、日立化成工業(株)製アディティ
ブ法用基板ACL−E−168(Pd系めっき触媒含有
ガラスエポキシ積層板の両面に、めっき触媒を含有する
フェノール変性ニトリルゴム系接着剤を約30μmの厚
さに塗布した基板)に感光性エレメントを日立エーアイ
シー社製A−3000型ラミネータを用いてポリエチレ
ンフィルムを剥しながら積層した。次に得られた試料の
ポリエチレンテレフタレートフィルムの上からコダック
ステップタブレットNo.2(イーストマンコダック
(株)社製、21段ステップタブレット)を密着させ、
(株)オーク製作所製HMW−590型露光機を使用し
250mJ/cm2で露光した。常温で20分間放置し
た後、試料のポリエチレンテレフタレートフィルムを剥
がし、ジエチレングリコールモノ−n−ブチルエーテル
200ml、ホウ砂(Na2B4O7・10H2O)8g、
水800mlの割合で調製した半水性現像液で40℃で
70秒間スプレー現像し、ステップタブレット段数7段
を得るために必要な露光量を感度とした。(1) Developability: Additive method substrate ACL-E manufactured by Hitachi Chemical Co., Ltd.
-168 (substrate obtained by applying a phenol-modified nitrile rubber-based adhesive containing a plating catalyst to a thickness of about 30 μm on both sides of a glass epoxy laminate containing a Pd-based plating catalyst) with a Scotch Bright manufactured by Sumitomo 3M Limited and washed with water And
Dry at 80 ° C. for 15 minutes. The photosensitive element obtained above was applied to both sides of this test substrate by Hitachi AIC's A-
Lamination was performed while peeling off the polyethylene film using a 3000 type laminator. Next, after peeling off the polyethylene terephthalate film, 500 ml of diethylene glycol mono-n-butyl ether, borax (Na 2 B 4 O)
7 · 10H 2 O) 8g, it was 40 seconds spray development at 40 ° C. in a semi-aqueous developing solution prepared at a ratio of water 500 ml. After the development, evaluation was carried out using a stereo microscope with a magnification of 30 times according to the following evaluation criteria. :: good developability (no resin left on the substrate surface) ×: poor developability (a little resin left on the substrate surface) (2) Photosensitivity As in (1) above, A phenol-modified nitrile rubber-based adhesive containing a plating catalyst is applied to a thickness of about 30 μm on both sides of a glass epoxy laminate containing a Pd-based plating catalyst, which is a substrate for additive method ACL-E-168 manufactured by Hitachi Chemical Co., Ltd. The photosensitive element was laminated on the substrate which was peeled off using a Hitachi AIC type A-3000 type laminator. Next, Kodak Step Tablet No. 1 was placed on the polyethylene terephthalate film of the obtained sample. 2 (Eastman Kodak Co., Ltd., 21 step tablet)
Exposure was performed at 250 mJ / cm 2 using an HMW-590 type exposure machine manufactured by Oak Manufacturing Co., Ltd. After standing at room temperature for 20 minutes, the polyethylene terephthalate film of the sample was peeled off, 200 ml of diethylene glycol mono-n-butyl ether, 8 g of borax (Na 2 B 4 O 7 .10H 2 O),
Spray development was performed at 40 ° C. for 70 seconds using a semi-aqueous developer prepared with a ratio of 800 ml of water, and the exposure required to obtain seven steps of step tablets was taken as sensitivity.
【0069】また、フォトツール(コダックステップタ
ブレットNo.2とライン/スペース(μm)=30/
30〜250/250(解像度)、及びライン/スペー
ス(μm)=30/400〜250/400(密着性)
のネガパターンを有するフォトツール)を得られた試料
のポリエチレンテレフタレートフィルムの上から密着さ
せ、ステップタブレット段数7段を得られる露光量で露
光し、現像したときのレジスト形状が得られる最も小さ
な解像度パターンのライン/スペースの値を解像度とし
た。A photo tool (Kodak Step Tablet No. 2 and line / space (μm) = 30 /
30-250 / 250 (resolution) and line / space (μm) = 30 / 400-250 / 400 (adhesion)
A photo tool having a negative pattern of the above), the smallest resolution pattern to obtain a resist shape when exposed and developed with an exposure amount capable of obtaining seven steps of step tablets, obtained by closely contacting the obtained sample with a polyethylene terephthalate film. The line / space value of was taken as the resolution.
【0070】(3)無電解銅めっき性 上記(1)と同様に、日立化成工業(株)製アディティ
ブ法用基板ACL−E−168(Pd系めっき触媒含有
ガラスエポキシ積層板の両面に、めっき触媒を含有する
フェノール変性ニトリルゴム系接着剤を約30μmの厚
さに塗布した基板)に感光性エレメントを積層した試料
のポリエチレンテレフタレートフィルムの上から図2に
示す試験用ネガマスクを密着させ、(株)オーク製作所
製HMW−590型露光機を使用し250mJ/cm2
で露光した。常温で20分間放置した後、試料のポリエ
チレンテレフタレートフィルムを剥がし、ジエチレング
リコールモノ−n−ブチルエーテル200ml、ホウ砂
(Na2B4O7・10H2O)8g、水800mlの割合
で調製した半水性現像液で40℃で40秒間スプレー現
像したあと、80℃で10分間乾燥した。次いで、東芝
電材(株)製東芝紫外線照射装置を使用して、3J/c
m2の紫外線照射を行い、更に160℃で60分間加熱
処理を行い、めっきレジストを形成した試験基板を得
た。(3) Electroless Copper Plating Property In the same manner as in (1) above, the substrate ACL-E-168 (additional method substrate manufactured by Hitachi Chemical Co., Ltd.) A negative mask for test shown in FIG. 2 was brought into close contact with a polyethylene terephthalate film of a sample in which a photosensitive element was laminated on a phenol-modified nitrile rubber-based adhesive containing a catalyst to a thickness of about 30 μm). ) 250 mJ / cm 2 using an HMW-590 type exposure machine manufactured by Oak Manufacturing Co., Ltd.
Exposure. After standing at room temperature for 20 minutes, peeling the polyethylene terephthalate film samples, diethylene glycol mono -n- butyl ether 200 ml, borax (Na 2 B 4 O 7 · 10H 2 O) 8g, semi-aqueous developer prepared at a ratio of water 800ml The solution was spray-developed at 40 ° C for 40 seconds, and then dried at 80 ° C for 10 minutes. Then, using a Toshiba UV irradiator manufactured by Toshiba Electric Materials Co., Ltd., 3 J / c
Irradiation with ultraviolet rays of m 2 was performed, and heat treatment was further performed at 160 ° C. for 60 minutes to obtain a test substrate on which a plating resist was formed.
【0071】このようにしてめっきレジストを形成した
試験基板を42%ホウフッ化水素酸1リットルに重クロ
ム酸ナトリウム20gを溶かした40℃の液に15分間
浸漬し、接着剤層の露出部分を粗化し水洗後、濃度3規
定の塩酸に浸漬し水洗した。この試験基板をCuSO4
5H2O15g/リットル、エチレンジアミン4酢酸3
0g/リットル、37%ホルマリン水溶液10ml/リ
ットルを含み、NaOHでpH=12.5に調整した無
電解銅めっき液に70℃で15時間浸漬し、水洗後80
℃で10分間乾燥した。無電解銅めっき後、30倍の倍
率の実体顕微鏡を用いて下記の評価基準で評価した。 ○:無電解銅めっき性の良好なもの(レジストにクラッ
クや浮き、ハガレの発生が全くないもの) △:無電解銅めっき性がやや不良なもの(レジストの一
部にクラックや浮き、ハガレが発生したもの) ×:無電解銅めっき性が不良なもの(レジストの全面に
クラックや浮き、ハガレが発生したもの) (4)めっき析出性 上記(2)と同様の操作で日立化成工業(株)製アディ
ティブ法用基板ACL−E−168(Pd系めっき触媒
含有ガラスエポキシ積層板の両面に、めっき触媒を含有
するフェノール変性ニトリルゴム系接着剤を約30μm
の厚さに塗布した基板)にめっきレジストを形成した後
に無電解銅めっきを行い、無電解銅めっきが施された導
体部分のめっき析出状況を30倍の倍率の実体顕微鏡を
用いて下記の評価基準で評価した。 ○:めっき表面が平滑なもの ×:めっき表面が平滑でないもの又はめっきがこぶ状や
枝状に異常析出しているもの (5)はんだ耐熱性 上記(2)と同様の操作で、日立化成工業(株)製アデ
ィティブ法用基板ACL−E−168(Pd系めっき触
媒含有ガラスエポキシ積層板の両面に、めっき触媒を含
有するフェノール変性ニトリルゴム系接着剤を約30μ
mの厚さに塗布した基板)にめっきレジストを形成した
後に無電解銅めっきを行い作製された試験基板に、ロジ
ン系フラックスMH−820V(タムラ化研(株)製)
を塗布した後、260℃のはんだ浴中に30秒間浸漬し
てはんだ付け処理を行った。その後、めっきレジストの
クラック発生状況、基板からのレジストの浮きや剥がれ
の状況を目視で次の基準で評価した。 良好:クラック、浮き及び剥がれがないもの 不良:クラック、浮き及び剥がれが発生したものThe test substrate on which the plating resist was formed in this manner was immersed in a solution of 20 g of sodium dichromate in 1 liter of 42% borofluoric acid at 40 ° C. for 15 minutes to remove the exposed portion of the adhesive layer. After washing with water, the sample was immersed in 3N hydrochloric acid and washed with water. This test substrate was CuSO 4
5H 2 O 15 g / liter, ethylenediaminetetraacetic acid 3
0 g / liter, containing 10 ml / liter of a 37% formalin aqueous solution, immersed in an electroless copper plating solution adjusted to pH = 12.5 with NaOH at 70 ° C. for 15 hours, washed with water, and washed with 80% water.
Dry at 10 ° C. for 10 minutes. After the electroless copper plating, evaluation was performed using a stereoscopic microscope at a magnification of 30 times according to the following evaluation criteria. :: Good electroless copper plating property (no crack, floating or peeling in resist) △: Slightly poor electroless copper plating property (crack, floating or peeling in part of resist) ×: Poor electroless copper plating (cracks, floating, peeling occurred on the entire surface of the resist) (4) Plating deposition The same operation as in (2) above was performed by Hitachi Chemical Co., Ltd. ) Additive method substrate ACL-E-168 (Pd-based plating catalyst-containing glass-epoxy laminate, on both sides of a phenol-modified nitrile rubber-based adhesive containing a plating catalyst of about 30 μm
After forming a plating resist on a substrate coated to a thickness of 3 mm, electroless copper plating is performed, and the plating deposition state of the conductor portion subjected to the electroless copper plating is evaluated using a stereoscopic microscope at a magnification of 30 times as follows. Evaluation was based on criteria. ○: Plating surface is smooth ×: Plating surface is not smooth or plating is abnormally deposited in the form of bumps or branches (5) Solder heat resistance In the same manner as in (2) above, Hitachi Chemical Co., Ltd. Additive method substrate ACL-E-168 (Pd-based plating catalyst-containing glass-epoxy laminate, on both surfaces of a phenol-modified nitrile rubber-based adhesive containing a plating catalyst of about 30 μm)
rosin flux MH-820V (Tamura Kaken Co., Ltd.) was formed on a test substrate produced by forming a plating resist on a substrate coated to a thickness of m) and electroless copper plating.
, And then immersed in a 260 ° C. solder bath for 30 seconds to perform a soldering process. Thereafter, the occurrence of cracks in the plating resist and the state of lifting and peeling of the resist from the substrate were visually evaluated according to the following criteria. Good: No cracks, floating and peeling. Bad: Cracks, floating and peeling.
【0072】[0072]
【表5】 [Table 5]
【0073】[0073]
【発明の効果】本発明の感光性樹脂組成物及びこれを用
いた感光性エレメントは、作業環境の良好な現像液を用
いて現像でき、解像度や耐めっき液性に優れ、また永久
レジストとして使用する場合には、はんだ耐熱性に優れ
るなど無電解銅めっき用のレジストとして好適である。Industrial Applicability The photosensitive resin composition of the present invention and the photosensitive element using the same can be developed using a developer having a good working environment, have excellent resolution and plating solution resistance, and can be used as a permanent resist. In this case, it is suitable as a resist for electroless copper plating because of its excellent solder heat resistance.
【0074】また、本発明の感光性樹脂組成物及びこれ
を用いた感光性エレメントは、耐薬品性に優れるためエ
ッチングレジスト、電気めっき用レジストとしても好適
に使用できる。Further, the photosensitive resin composition of the present invention and the photosensitive element using the same are excellent in chemical resistance and can be suitably used as an etching resist and a resist for electroplating.
【0075】本発明により得られためっきレジストはは
んだ耐熱性、耐薬品性に優れ印刷配線板製造のレジスト
として好適に使用できる。The plating resist obtained by the present invention is excellent in solder heat resistance and chemical resistance and can be suitably used as a resist for manufacturing printed wiring boards.
【図1】実施例1〜4及び比較例1〜3で用いた感光性
エレメントの製造装置の略図。FIG. 1 is a schematic view of a photosensitive element manufacturing apparatus used in Examples 1 to 4 and Comparative Examples 1 to 3.
【図2】実施例1〜4及び比較例1〜3で用いた試験用
ネガマスクの説明図。FIG. 2 is an explanatory diagram of a test negative mask used in Examples 1 to 4 and Comparative Examples 1 to 3.
1 ポリエチレンテレフタレートフィルム繰り出しロー
ル 2 フィードロール 3 バッキングロール 4 ドクタロール 5 ナイフ 6 感光性永久マスク材料の溶液 7 乾燥機 8 ポリエチレンフィルム繰り出しロール 9、10 ロール 11 感光性エレメント巻き取りロール 12 ポリエチレンテレフタレートフィルム 13 ポリエチレンフィルム 14 感光性エレメントDESCRIPTION OF SYMBOLS 1 Polyethylene terephthalate film unwinding roll 2 Feed roll 3 Backing roll 4 Doctor roll 5 Knife 6 Solution of photosensitive permanent mask material 7 Dryer 8 Polyethylene film unwinding roll 9, 10 Roll 11 Photosensitive element take-up roll 12 Polyethylene terephthalate film 13 Polyethylene film 14 Photosensitive element
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/28 H05K 3/28 D (72)発明者 田中 庸司 茨城県日立市東町四丁目13番1号 日立化 成工業株式会社山崎工場内 (72)発明者 太田 文彦 茨城県日立市東町四丁目13番1号 日立化 成工業株式会社茨城研究所内 Fターム(参考) 2H025 AA02 AA06 AA10 AA20 AB15 AC01 AD01 BC31 CA05 CA28 CB21 CB43 CC20 DA01 FA29 FA30 4J002 CH061 EE037 EF126 EH076 EN097 EU117 EU198 EV307 FD147 GP03 5E314 AA24 AA27 BB02 BB12 CC15 DD07 FF05 GG10 GG14 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 3/28 H05K 3/28 D (72) Inventor Yoji Tanaka 4-3-1-1, Higashicho, Hitachi City, Ibaraki Prefecture Hitachi Chemical Co., Ltd. Yamazaki Plant (72) Inventor Fumihiko Ota 4-3-1-1, Higashicho, Hitachi City, Ibaraki Prefecture Hitachi Chemical Co., Ltd.Ibaraki Research Laboratory F-term (reference) CA05 CA28 CB21 CB43 CC20 DA01 FA29 FA30 4J002 CH061 EE037 EF126 EH076 EN097 EU117 EU198 EV307 FD147 GP03 5E314 AA24 AA27 BB02 BB12 CC15 DD07 FF05 GG10 GG14
Claims (7)
及びR3はそれぞれ独立に炭素数1〜4のアルキル基、
炭素数1〜4のアルコキシ基又はハロゲン原子を表し、
x及びyはそれぞれ独立に0〜4の整数を表す。)で示
される繰り返し単位を有するポリヒドロキシエーテル樹
脂中の水酸基に対して、飽和又は不飽和の多塩基酸無水
物を、当量比(酸無水物基/水酸基)が0.08〜0.
8の範囲になるように反応させて得られるカルボキシル
基含有ポリヒドロキシエーテル樹脂化合物、(B)末端
にエチレン性不飽和基を少なくとも1個有する光重合性
不飽和化合物、(C)活性光線により遊離ラジカルを生
成する光重合開始剤及び(D)下記一般式(II)で表
される化合物 【化2】 (式中、R4、R5及びR6はそれぞれ独立してアルキレ
ン基、置換アルキレン基、アルキレンオキシ基、アリー
レン基又は置換アリーレン基であり、R7、R8及びR9
はそれぞれ独立してイソシアネートと活性水素をもつ化
合物が反応した際に得られる残基を表す。)を含有して
なる感光性樹脂組成物において、活性光線により遊離ラ
ジカルを生成する光重合開始剤が2,4,5−トリアリ
ールイミダゾール二量体の中から選ばれた少なくとも1
種を含有することを特徴とする感光性樹脂組成物。(A) The following general formula (I): (In the formula, R 1 represents a divalent saturated aliphatic hydrocarbon group, R 2
And R 3 are each independently an alkyl group having 1 to 4 carbon atoms;
Represents an alkoxy group having 1 to 4 carbon atoms or a halogen atom,
x and y each independently represent an integer of 0 to 4; ), The equivalent ratio (acid anhydride group / hydroxyl group) of the saturated or unsaturated polybasic acid anhydride to the hydroxyl group in the polyhydroxyether resin having the repeating unit represented by the formula (1) is 0.08 to 0.
8, a carboxyl group-containing polyhydroxyether resin compound obtained by reacting to have a range of 8; (B) a photopolymerizable unsaturated compound having at least one ethylenically unsaturated group at a terminal; A photopolymerization initiator that generates a radical and (D) a compound represented by the following general formula (II): (Wherein, R 4 , R 5 and R 6 are each independently an alkylene group, a substituted alkylene group, an alkyleneoxy group, an arylene group or a substituted arylene group, and R 7 , R 8 and R 9
Each independently represents a residue obtained when an isocyanate reacts with a compound having active hydrogen. ), Wherein the photopolymerization initiator for generating free radicals by actinic rays is at least one selected from 2,4,5-triarylimidazole dimers.
A photosensitive resin composition comprising a seed.
光重合開始剤が一般式(III) 【化3】 (式中のR10及びR11は、それぞれ水素原子又はアルキ
ル基であり、それぞれ同一でもよく、互いに異なっても
よい。)で表される化合物から選ばれた少なくとも1種
と2,4,5−トリアリールイミダゾール二量体の中か
ら選ばれた少なくとも1種とを含有する請求項1記載の
感光性樹脂組成物。2. A photopolymerization initiator which generates free radicals by actinic rays is represented by the general formula (III): ## STR3 ## (Wherein R 10 and R 11 in the formula are each a hydrogen atom or an alkyl group, and may be the same or different from each other). The photosensitive resin composition according to claim 1, comprising at least one selected from triarylimidazole dimers.
組成物の層と、この層を支持するフィルムを有する感光
性エレメント。3. A photosensitive element comprising a layer of the photosensitive resin composition according to claim 1 and a film supporting the layer.
性樹脂組成物の層の上に積層してなる請求項3記載の感
光性エレメント。4. The photosensitive element according to claim 3, further comprising a peelable cover film laminated on the photosensitive resin composition layer.
組成物の溶液を基板上に塗布し、乾燥後、像的に活性光
を照射し、次いで現像を行うめっきレジストの製造方
法。5. A method for producing a plating resist, comprising applying a solution of the photosensitive resin composition according to claim 1 onto a substrate, drying the solution, irradiating the solution with imagewise active light, and then developing.
メントを用い、その感光性樹脂組成物の層を基板上に積
層し、像的に活性光を照射し、次いで現像を行うめっき
レジストの製造方法。6. A plating resist, comprising using the photosensitive element according to claim 3 and laminating a layer of the photosensitive resin composition on a substrate, irradiating the active image imagewise, and then developing. Manufacturing method.
程の一方又は両方の工程を有する請求項5又は6記載の
めっきレジストの製造方法。7. The method for producing a plating resist according to claim 5, further comprising one or both of an actinic ray irradiation step and a heating step after the development.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31854198A JP4134404B2 (en) | 1998-11-10 | 1998-11-10 | Photosensitive resin composition, photosensitive element, and plating resist manufacturing method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31854198A JP4134404B2 (en) | 1998-11-10 | 1998-11-10 | Photosensitive resin composition, photosensitive element, and plating resist manufacturing method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000147765A true JP2000147765A (en) | 2000-05-26 |
| JP4134404B2 JP4134404B2 (en) | 2008-08-20 |
Family
ID=18100285
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31854198A Expired - Fee Related JP4134404B2 (en) | 1998-11-10 | 1998-11-10 | Photosensitive resin composition, photosensitive element, and plating resist manufacturing method using the same |
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| Country | Link |
|---|---|
| JP (1) | JP4134404B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007105795A1 (en) | 2006-03-15 | 2007-09-20 | Hitachi Chemical Company, Ltd. | Phenoxy resin for optical material, resin composition for optical material, resin film for optical material, and optical waveguide using those |
| WO2008099787A1 (en) | 2007-02-14 | 2008-08-21 | Hitachi Chemical Company, Ltd. | Resin composition for optical material, resin film for optical material, and optical waveguide using them |
-
1998
- 1998-11-10 JP JP31854198A patent/JP4134404B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007105795A1 (en) | 2006-03-15 | 2007-09-20 | Hitachi Chemical Company, Ltd. | Phenoxy resin for optical material, resin composition for optical material, resin film for optical material, and optical waveguide using those |
| US8383695B2 (en) | 2006-03-15 | 2013-02-26 | Hitachi Chemical Company, Ltd. | Phenoxy resin for optical material, resin composition for optical material, resin film for optical material and optical waveguide using those |
| WO2008099787A1 (en) | 2007-02-14 | 2008-08-21 | Hitachi Chemical Company, Ltd. | Resin composition for optical material, resin film for optical material, and optical waveguide using them |
| EP2112181A4 (en) * | 2007-02-14 | 2010-06-02 | Hitachi Chemical Co Ltd | Resin composition for optical material, resin film for optical material, and optical waveguide using them |
| US8463099B2 (en) | 2007-02-14 | 2013-06-11 | Hitachi Chemical Company | Resin composition for optical material, resin film for optical material, and optical waveguide using them |
| JP5365198B2 (en) * | 2007-02-14 | 2013-12-11 | 日立化成株式会社 | Resin composition for optical material, resin film for optical material, and optical waveguide using the same |
| TWI421296B (en) * | 2007-02-14 | 2014-01-01 | Hitachi Chemical Co Ltd | Resin composition for forming optical waveguide, resin film for forming optical waveguide and optical waveguide using the resin film |
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| Publication number | Publication date |
|---|---|
| JP4134404B2 (en) | 2008-08-20 |
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