JP2000128987A - Polybenzoxazole precursor and polybenzoxazole - Google Patents
Polybenzoxazole precursor and polybenzoxazoleInfo
- Publication number
- JP2000128987A JP2000128987A JP10306730A JP30673098A JP2000128987A JP 2000128987 A JP2000128987 A JP 2000128987A JP 10306730 A JP10306730 A JP 10306730A JP 30673098 A JP30673098 A JP 30673098A JP 2000128987 A JP2000128987 A JP 2000128987A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- polybenzoxazole
- general formula
- acid
- fluorocycloalkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002577 polybenzoxazole Polymers 0.000 title claims abstract description 42
- 239000002243 precursor Substances 0.000 title claims abstract description 25
- 125000000962 organic group Chemical group 0.000 claims abstract description 15
- 125000005348 fluorocycloalkyl group Chemical group 0.000 claims abstract description 14
- 125000003709 fluoroalkyl group Chemical group 0.000 claims abstract description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 abstract description 4
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract description 2
- 238000006482 condensation reaction Methods 0.000 abstract description 2
- 229920006015 heat resistant resin Polymers 0.000 abstract description 2
- 229920000137 polyphosphoric acid Polymers 0.000 abstract description 2
- 229910020587 CmF2m+1 Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 16
- 229920001721 polyimide Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- -1 aminophenol compound Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PGRIMKUYGUHAKH-UHFFFAOYSA-N 2,4,5,6-tetrafluorobenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=C(F)C(F)=C(F)C(C(O)=O)=C1F PGRIMKUYGUHAKH-UHFFFAOYSA-N 0.000 description 2
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229940057867 methyl lactate Drugs 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- FOPIPBMGQZCAGO-UHFFFAOYSA-N 1,2,4,6-tetrafluorocyclohexa-3,5-diene-1,3-dicarbonitrile Chemical compound FC1C(C#N)=C(F)C=C(F)C1(F)C#N FOPIPBMGQZCAGO-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- XFFVWQRWVKPHDE-UHFFFAOYSA-N 1-fluorocyclohexa-3,5-diene-1,2-dicarboxylic acid Chemical compound OC(=O)C1C=CC=CC1(F)C(O)=O XFFVWQRWVKPHDE-UHFFFAOYSA-N 0.000 description 1
- SPNKRWLNDSRCFM-UHFFFAOYSA-N 1-fluorocyclohexa-3,5-diene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC(F)(C(O)=O)C1 SPNKRWLNDSRCFM-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- QYCPVKMFWNBDPV-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluorooctanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(O)=O QYCPVKMFWNBDPV-UHFFFAOYSA-N 0.000 description 1
- HDGLPTVARHLGMV-UHFFFAOYSA-N 2-amino-4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenol Chemical compound NC1=CC(C(C(F)(F)F)C(F)(F)F)=CC=C1O HDGLPTVARHLGMV-UHFFFAOYSA-N 0.000 description 1
- DWOLBEJAJWCIGK-UHFFFAOYSA-N 2-fluorobenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1F DWOLBEJAJWCIGK-UHFFFAOYSA-N 0.000 description 1
- YUWKPDBHJFNMAD-UHFFFAOYSA-N 2-fluoroterephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(F)=C1 YUWKPDBHJFNMAD-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- YJLVXRPNNDKMMO-UHFFFAOYSA-N 3,4,5,6-tetrafluorophthalic acid Chemical compound OC(=O)C1=C(F)C(F)=C(F)C(F)=C1C(O)=O YJLVXRPNNDKMMO-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- BBCQSMSCEJBIRD-UHFFFAOYSA-N 3-fluorophthalic acid Chemical compound OC(=O)C1=CC=CC(F)=C1C(O)=O BBCQSMSCEJBIRD-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- PHQYMDAUTAXXFZ-UHFFFAOYSA-N 4-[2-(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C=C1 PHQYMDAUTAXXFZ-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は電気特性、熱特性、
機械特性、物理特性に優れたポリベンゾオキサゾール樹
脂に関するものであり、半導体用の層間絶縁膜、保護
膜、多層回路の層間絶縁膜、フレキシブル銅張版のカバ
ーコート、ソルダーレジスト膜、液晶配向膜などとして
適用できる。TECHNICAL FIELD The present invention relates to electrical characteristics, thermal characteristics,
This is related to polybenzoxazole resins with excellent mechanical and physical properties, such as interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad plates, solder resist films, liquid crystal alignment films, etc. Applicable as
【0002】[0002]
【従来の技術】半導体用絶縁材料に求められている特性
のなかで電気特性、特に誘電率と耐熱性は最も重要な特
性である。この2つの特性を両立させるために耐熱性の
高い有機系の絶縁膜が期待されている。例えば従来から
用いられている二酸化シリコン等の無機の絶縁膜は高耐
熱性を示すが誘電率が高く、前述の特性について両立が
困難になりつつある。ポリイミド樹脂に代表される有機
系の絶縁膜は電気特性、耐熱性に優れ2つの特性の両立
が可能であり、実際にソルダーレジスト、カバーレイ、
液晶配向膜などに用いられている。しかしながら近年の
半導体の高機能化、高性能化にともない、電気特性、耐
熱性について著しい向上が必要とされているため更に高
性能な樹脂が必要とされるようになっている。特に誘電
率について2.5を下回るような低誘電率材料が期待さ
れており、ポリイミド樹脂においてもフッ素並びにトリ
フルオロメチル基を高分子内に導入することにより電気
特性と耐熱性を両立することが試みられているが、現時
点では必要とされる水準まで達していない。2. Description of the Related Art Among the characteristics required for insulating materials for semiconductors, electrical characteristics, particularly dielectric constant and heat resistance, are the most important characteristics. In order to make these two characteristics compatible, an organic insulating film having high heat resistance is expected. For example, a conventionally used inorganic insulating film such as silicon dioxide has high heat resistance, but has a high dielectric constant, and it is becoming difficult to achieve the above-mentioned characteristics at the same time. An organic insulating film represented by a polyimide resin has excellent electrical properties and heat resistance, and can achieve both of the two properties.
It is used for liquid crystal alignment films and the like. However, with the recent advancement of functions and performance of semiconductors, remarkable improvements in electrical characteristics and heat resistance have been required, so that even higher performance resins have been required. In particular, a low dielectric constant material having a dielectric constant of less than 2.5 is expected, and even in a polyimide resin, it is possible to achieve both electrical characteristics and heat resistance by introducing fluorine and a trifluoromethyl group into a polymer. Attempts have been made, but not to the required level at this time.
【0003】ポリイミド樹脂以外の樹脂ではポリベンゾ
オキサゾール樹脂が期待されている。ポリイミド樹脂は
イミド環にカルボキシル基を2個有していることで電気
特性に悪影響を及ぼしている。従って、一般にポリベン
ゾオキサゾール樹脂はポリイミド樹脂よりも電気特性に
優れ、かつ耐熱性も同等であるため、極めて有用な樹脂
である。しかし、要求されている電気特性の水準が非常
に高く、これまでのポリベンゾオキサゾール樹脂では要
求されている水準まで達していない。さらに低吸水性も
重要な特性の一つである。というのも樹脂が吸水する
と、電気特性と耐熱性の片方または両方が悪化するから
である。この点に於いてもポリベンゾオキサゾール樹脂
はポリイミド樹脂よりも一般に低吸水性を示すためより
優れた樹脂である。[0003] Among resins other than polyimide resins, polybenzoxazole resins are expected. The polyimide resin has two bad carboxyl groups on the imide ring, which adversely affects the electrical characteristics. Therefore, polybenzoxazole resins are generally very useful resins because they have better electrical properties and the same heat resistance as polyimide resins. However, the required level of electric characteristics is extremely high, and the level of the conventional polybenzoxazole resin has not reached the required level. Furthermore, low water absorption is one of the important characteristics. This is because when the resin absorbs water, one or both of the electrical characteristics and the heat resistance deteriorate. Also in this respect, polybenzoxazole resin is generally superior to polyimide resin because it exhibits lower water absorption.
【0004】[0004]
【発明が解決しようとする課題】本発明は電気特性、耐
熱性、低吸水性に優れた耐熱性樹脂を提供する事を目的
とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat-resistant resin excellent in electric properties, heat resistance and low water absorption.
【0005】[0005]
【課題を解決するための手段】本発明は、[1]一般式
(1)で表わされる繰り返し単位を有するポリベンゾオ
キサゾール前駆体The present invention provides [1] a polybenzoxazole precursor having a repeating unit represented by the general formula (1):
【0006】[0006]
【化1】 Embedded image
【0007】(式中、nは1〜1000までの整数を示
す。R1、R2はCmF2m+1で表されるフルオロアルキル
基であり互いに同じであっても異なってもよい。mは1
〜10までの整数を示す。Xは一般式(2)または一般
式(3)で表わされる2価の有機基であり、Yは2価以
上の有機基を表す。)(Wherein, n represents an integer of 1 to 1000. R 1 and R 2 are fluoroalkyl groups represented by C m F 2m + 1, which may be the same or different. m is 1
Shows an integer from 10 to 10. X represents a divalent organic group represented by the general formula (2) or (3), and Y represents a divalent or higher valent organic group. )
【0008】[0008]
【化2】 Embedded image
【0009】(式中、R3は一般式(4)で表されるフ
ルオロシクロアルキル基であり、R4〜R6はH、一般式
(4)で表されるフルオロシクロアルキル基、Fまたは
1価の有機基であり互いに同じであっても異なってもよ
い。)Wherein R 3 is a fluorocycloalkyl group represented by the general formula (4), R 4 to R 6 are H, a fluorocycloalkyl group represented by the general formula (4), F or It is a monovalent organic group and may be the same or different.)
【0010】[0010]
【化3】 Embedded image
【0011】(式中、R7は一般式(4)で表されるフ
ルオロシクロアルキル基であり、R8〜R10はH、一般
式(4)で表されるフルオロシクロアルキル基、Fまた
は1価の有機基であり互いに同じであっても異なっても
よい。)Wherein R 7 is a fluorocycloalkyl group represented by the general formula (4), R 8 to R 10 are H, a fluorocycloalkyl group represented by the general formula (4), F or It is a monovalent organic group and may be the same or different.)
【0012】[0012]
【化4】 Embedded image
【0013】(式中、kは3〜7までの整数を表す。)
であり、[2]上記[1]に記載のポリベンゾオキサゾ
ール前駆体を脱水閉環した構造を有するポリベンゾオキ
サゾールである。(In the formula, k represents an integer of 3 to 7.)
[2] A polybenzoxazole having a structure in which the polybenzoxazole precursor according to [1] is dehydrated and closed.
【0014】[0014]
【発明の実施の形態】本発明者らは、前記従来の問題点
を鑑み、鋭意検討を重ねた結果、一般式(1)で表され
るポリベンゾオキサゾール前駆体、及びこのポリベンゾ
オキサゾール前駆体を脱水閉環した構造を有するポリベ
ンゾオキサゾール樹脂を見いだし、本発明を完成するに
至った。本発明のポリベンゾオキサゾール前駆体の製造
方法は、一般式(5)で示されるビスアミノフェノール
化合物と一般式(6)で示されるジカルボン酸を酸クロ
リド法やポリリン酸やジシクロヘキシルジカルボジイミ
ド等の脱水縮合剤の存在下での縮合反応等の方法により
得ることができる。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have made intensive studies in view of the above-mentioned conventional problems, and as a result, have found that a polybenzoxazole precursor represented by the general formula (1) and a polybenzoxazole precursor A polybenzoxazole resin having a structure obtained by dehydration ring closure was found, and the present invention was completed. The method for producing a polybenzoxazole precursor according to the present invention is a method for preparing a bisaminophenol compound represented by the general formula (5) and a dicarboxylic acid represented by the general formula (6) by an acid chloride method or dehydration of polyphosphoric acid or dicyclohexyl dicarbodiimide. It can be obtained by a method such as a condensation reaction in the presence of a condensing agent.
【0015】[0015]
【化5】 Embedded image
【0016】(式中、nは1〜1000までの整数を示
す。R1、R2はCmF2m+1で表されるフルオロアルキル
基であり互いに同じであっても異なってもよい。mは1
〜10までの整数を示す。Xは一般式(2)または一般
式(3)で表わされる2価の有機基であり、Yは2価以
上の有機基を表す。)(In the formula, n represents an integer of 1 to 1000. R 1 and R 2 are fluoroalkyl groups represented by C m F 2m + 1, which may be the same or different. m is 1
Shows an integer from 10 to 10. X represents a divalent organic group represented by the general formula (2) or (3), and Y represents a divalent or higher valent organic group. )
【0017】[0017]
【化2】 Embedded image
【0018】(式中、R3は一般式(4)で表されるフ
ルオロシクロアルキル基であり、R4〜R6はH、一般式
(4)で表されるフルオロシクロアルキル基、Fまたは
1価の有機基であり互いに同じであっても異なってもよ
い。)Wherein R 3 is a fluorocycloalkyl group represented by the general formula (4), R 4 to R 6 are H, a fluorocycloalkyl group represented by the general formula (4), F or It is a monovalent organic group and may be the same or different.)
【0019】[0019]
【化3】 Embedded image
【0020】(式中、R7は一般式(4)で表されるフ
ルオロシクロアルキル基であり、R8〜R10はH、一般
式(4)で表されるフルオロシクロアルキル基、Fまた
は1価の有機基であり互いに同じであっても異なっても
よい。)(Wherein R 7 is a fluorocycloalkyl group represented by the general formula (4), R 8 to R 10 are H, a fluorocycloalkyl group represented by the general formula (4), F or It is a monovalent organic group and may be the same or different.)
【0021】[0021]
【化4】 Embedded image
【0022】(式中、kは3〜7までの整数を表す。)(In the formula, k represents an integer of 3 to 7.)
【0023】[0023]
【化6】 Embedded image
【0024】(式中、Yは2価以上の有機基を表す。)(In the formula, Y represents a divalent or higher valent organic group.)
【0025】一般式(5)で表されるビスアミノフェノ
ール化合物の例としては、式(7)〜式(20)の化合
物を挙げることができるが、これらに限定されるもので
はない。これらのビスアミノフェノール化合物は単独、
または組み合わせて使用することができる。また、4,
4’−ジアミノ−3,3’−ジヒドロキシビフェニルや
2,2’-ビス(3-アミノ-4-ヒドロキシフェニル)ヘ
キサフルオロプロパン等の一般式(5)で表されるビス
アミノフェノール化合物以外のビスアミノフェノール化
合物を併用することも性能を損なわない範囲で可能であ
る。Examples of the bisaminophenol compound represented by the general formula (5) include, but are not limited to, the compounds of the formulas (7) to (20). These bisaminophenol compounds are used alone,
Or they can be used in combination. Also, 4,
Bis other than the bisaminophenol compound represented by the general formula (5) such as 4′-diamino-3,3′-dihydroxybiphenyl and 2,2′-bis (3-amino-4-hydroxyphenyl) hexafluoropropane It is possible to use an aminophenol compound in combination as long as the performance is not impaired.
【0026】[0026]
【化7】 Embedded image
【0027】[0027]
【化8】 Embedded image
【0028】[0028]
【化9】 Embedded image
【0029】[0029]
【化10】 Embedded image
【0030】[0030]
【化11】 Embedded image
【0031】ジカルボン酸の例を挙げるとイソフタル
酸、テレフタル酸、3−フルオロイソフタル酸、2−フ
ルオロイソフタル酸、3−フルオロフタル酸、2−フル
オロフタル酸、2−フルオロテレフタル酸、2,4,
5,6−テトラフルオロイソフタル酸、3,4,5,6
−テトラフルオロフタル酸、2,2−ビス(4−カルボ
キシフェニル)ヘキサフルオロプロパン、パーフルオロ
スベリン酸、2,2’−ビス(トリフルオロメチル)−
4,4’−ビフェニレンジカルボン酸、4,4’−オキ
シビス安息香酸等であるが、必ずしもこれらに限られる
ものではない。また2種類以上のカルボン酸を組み合わ
せて使用することも可能である。Examples of dicarboxylic acids include isophthalic acid, terephthalic acid, 3-fluoroisophthalic acid, 2-fluoroisophthalic acid, 3-fluorophthalic acid, 2-fluorophthalic acid, 2-fluoroterephthalic acid, 2,4,4
5,6-tetrafluoroisophthalic acid, 3,4,5,6
-Tetrafluorophthalic acid, 2,2-bis (4-carboxyphenyl) hexafluoropropane, perfluorosuberic acid, 2,2'-bis (trifluoromethyl)-
Examples thereof include 4,4′-biphenylenedicarboxylic acid and 4,4′-oxybisbenzoic acid, but are not necessarily limited thereto. It is also possible to use two or more carboxylic acids in combination.
【0032】酸クロリド法によるポリベンゾオキサゾー
ル前駆体の合成の例を挙げると、ビスアミノフェノール
化合物を、通常N−メチル−2−ピロリドン等の極性溶
媒に溶解し、ピリジン等の酸受容剤存在下で、ジカルボ
ン酸クロリドと−30℃から室温で反応することにより
ポリベンゾオキサゾール前駆体を得ることができる。本
発明のポリベンゾオキサゾールは、このようにして得ら
れたポリベンゾオキサゾール前駆体を従来法の通り、加
熱または脱水剤で処理することにより脱水・閉環反応
し、得ることができる。これに、必要により各種添加剤
として、界面活性剤やカップリング剤等を添加し、半導
体用層間絶縁膜、保護膜、多層回路の層間絶縁膜、フレ
キシブル銅張板のカバーコート、ソルダーレジスト膜、
液晶配向膜等として用いることができる。また、本発明
におけるポリベンゾオキサゾール樹脂は、その前駆体と
感光剤としてナフトキノンジアジド化合物を用いること
で、感光性樹脂組成物として用いることが可能である。As an example of the synthesis of a polybenzoxazole precursor by the acid chloride method, a bisaminophenol compound is usually dissolved in a polar solvent such as N-methyl-2-pyrrolidone, and then dissolved in the presence of an acid acceptor such as pyridine. Then, a polybenzoxazole precursor can be obtained by reacting with dicarboxylic acid chloride at −30 ° C. to room temperature. The polybenzoxazole of the present invention can be obtained by subjecting the thus obtained polybenzoxazole precursor to a dehydration / ring-closing reaction by heating or treating with a dehydrating agent as in a conventional method. If necessary, various additives such as surfactants and coupling agents are added, and interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad boards, solder resist films,
It can be used as a liquid crystal alignment film or the like. Further, the polybenzoxazole resin in the present invention can be used as a photosensitive resin composition by using a naphthoquinonediazide compound as a precursor and a photosensitive agent.
【0033】本発明のポリベンゾオキサゾール前駆体
は、通常、これを溶剤に溶解し、ワニス状にして使用す
る。溶剤としては、N−メチル−2−ピロリドン、γ−
ブチロラクトン、N,N−ジメチルアセトアミド、ジメ
チルスルホキシド、ジエチレングリコールジメチルエー
テル、ジエチレングリコールジエチルエーテル、ジエチ
レングリコールジブチルエーテル、プロピレングリコー
ルモノメチレエーテル、ジプロピレングリコールモノメ
チレエーテル、プロピレングリコールモノメチルエーテ
ルアセテート、乳酸メチル、乳酸エチル、乳酸ブチル、
メチル−1,3−ブチレングリコールアセテート、1,
3−ブチレングリコール−3−モノメチルエーテル、ピ
ルビン酸メチル、ピルビン酸エチル、メチル−3−メト
キシプロピオネート等を1種、または2種以上混合して
用いることが出来る。The polybenzoxazole precursor of the present invention is usually dissolved in a solvent and used in the form of a varnish. As the solvent, N-methyl-2-pyrrolidone, γ-
Butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, methyl lactate, ethyl lactate, butyl lactate ,
Methyl-1,3-butylene glycol acetate, 1,
One or a mixture of two or more of 3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate and the like can be used.
【0034】本発明のポリベンゾオキサゾール前駆体の
使用方法は、前記該前駆体を上記溶剤に溶解し、適当な
支持体、例えばガラス、金属、シリコーンウエハーやセ
ラミック基盤等に塗布する。塗布方法は、スピンナーを
用いた回転塗布、スプレーコーターを用いた噴霧塗布、
浸漬、印刷、ロールコーティング等が選ばれる。このよ
うにして、塗膜を形成した後、加熱処理をして、ポリベ
ンゾオキサゾールに変換し用いることが好ましい。ま
た、ジカルボン酸成分を選択することにより溶剤に可溶
なポリベンゾオキサゾールとして用いることもできる。In the method of using the polybenzoxazole precursor of the present invention, the precursor is dissolved in the above-mentioned solvent and applied to a suitable support, for example, a glass, metal, silicone wafer or ceramic substrate. The coating method is spin coating using a spinner, spray coating using a spray coater,
Immersion, printing, roll coating, etc. are selected. After forming a coating film in this way, it is preferable to perform a heat treatment to convert it to polybenzoxazole before use. Further, by selecting a dicarboxylic acid component, it can be used as a polybenzoxazole which is soluble in a solvent.
【0035】[0035]
【実施例】以下に実施例により本発明を具体的に説明す
るが、実施例の内容になんら限定されるものではない。EXAMPLES The present invention will be described in detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.
【0036】(実施例1)4,4’−ヘキサフルオロイ
ソプロピリデンジフェニル−1,1’ジカルボン酸25
g、塩化チオニル45ml及び乾燥DMF0.5mlを
反応容器に入れ、60℃で2時間反応させた。反応終了
後、過剰の塩化チオニルを加熱及び減圧により留去し
た。析出物をヘキサンを用いて再結晶を行い、4,4’
−ヘキサフルオロイソプロピリデンジフェニル−1,
1’ジカルボン酸クロリドを得た。式(7)で表される
ビスアミノフェノール化合物14.51g(0.02m
ol)を乾燥したジメチルアセトアミド100gに溶解
し、ピリジン3.96g(0.05mol)を添加後、
乾燥窒素下、−15℃でジメチルアセトアミド50gに
4,4’−ヘキサフルオロイソプロピリデンジフェニル
−1,1’ジカルボン酸クロリド8.46g(0.02
mol)を溶解したものを30分掛けて滴下した。滴下
終了後、室温まで戻し、室温で5時間攪拌した。その
後、反応液を蒸留水1000mlに滴下し、沈殿物を集
め、乾燥することによりポリベンゾオキサゾール前駆体
を得た。(Example 1) 4,4'-Hexafluoroisopropylidenediphenyl-1,1'dicarboxylic acid 25
g, 45 ml of thionyl chloride and 0.5 ml of dry DMF were placed in a reaction vessel and reacted at 60 ° C. for 2 hours. After completion of the reaction, excess thionyl chloride was distilled off by heating and reduced pressure. The precipitate was recrystallized using hexane to obtain 4,4 ′
-Hexafluoroisopropylidene diphenyl-1,
1 ′ dicarboxylic acid chloride was obtained. 14.51 g of a bisaminophenol compound represented by the formula (7) (0.02 m
ol) was dissolved in 100 g of dried dimethylacetamide, and 3.96 g (0.05 mol) of pyridine was added.
Under dry nitrogen at −15 ° C., 8.46 g (0.02 g) of 4,4′-hexafluoroisopropylidenediphenyl-1,1 ′ dicarboxylic acid chloride was added to 50 g of dimethylacetamide.
mol) was added dropwise over 30 minutes. After completion of the dropwise addition, the mixture was returned to room temperature and stirred at room temperature for 5 hours. Thereafter, the reaction solution was dropped into 1000 ml of distilled water, and the precipitate was collected and dried to obtain a polybenzoxazole precursor.
【0037】このポリベンゾオキサゾール前駆体をN−
メチル−2−ピロリドンに溶解し、ワニスを得た。この
ワニスをガラス板上にギャップ300μmのドクターナ
イフを用いて塗布した。その後、オーブン中で70℃1
時間乾燥し、はく離して膜厚20μmのポリベンゾオキ
サゾール前駆体フィルムを得た。そのフィルムを金枠で
固定し、150℃/30分、250℃/30分、350
℃/30分の順で窒素雰囲気下で加熱し、ポリベンゾオ
キサゾールを得た。この試験フィルムを用いて、各種特
性を評価し、その結果を表1にまとめた。The polybenzoxazole precursor was converted to N-
It was dissolved in methyl-2-pyrrolidone to obtain a varnish. This varnish was applied on a glass plate using a doctor knife having a gap of 300 μm. Then, in the oven at 70 ℃ 1
After drying for an hour, the film was peeled off to obtain a polybenzoxazole precursor film having a thickness of 20 μm. The film was fixed with a metal frame, and 150 ° C./30 minutes, 250 ° C./30 minutes, 350 ° C.
The mixture was heated under a nitrogen atmosphere in the order of ° C./30 minutes to obtain polybenzoxazole. Various characteristics were evaluated using this test film, and the results are summarized in Table 1.
【0038】(実施例2)1,2,3,5−テトラフル
オロ−2,6−ジシアノベンゼン50gを65%硫酸水
250gに加えた。加熱して溶解させたあと還流条件下
3時間加熱した。析出した結晶を吸引濾過し、集めた結
晶を濃塩酸で洗浄後風乾した。このようにしてテトラフ
ルオロイソフタル酸を得た。式(7)で表されるビスア
ミノフェノール化合物14.51g(0.02mol)
の代わりに式(10)で表されるビスアミノフェノール
化合物23.05g(0.02mol)を、4,4’−
ヘキサフルオロイソプロピリデンジフェニル−1,1’
ジカルボン酸クロリド8.46g(0.02mol)の
代わりにテトラフルオロイソフタル酸から合成したテト
ラフルオロイソフタル酸クロリド5.42g(0.02
mol)を用いた以外は実施例1と同様にしてポリベン
ゾオキサゾールを作製し、評価を行った。Example 2 50 g of 1,2,3,5-tetrafluoro-2,6-dicyanobenzene was added to 250 g of 65% aqueous sulfuric acid. After heating to dissolve, the mixture was heated under reflux conditions for 3 hours. The precipitated crystals were filtered by suction, and the collected crystals were washed with concentrated hydrochloric acid and air-dried. Thus, tetrafluoroisophthalic acid was obtained. 14.51 g (0.02 mol) of the bisaminophenol compound represented by the formula (7)
Was replaced with 23.05 g (0.02 mol) of a bisaminophenol compound represented by the formula (10) by 4,4′-
Hexafluoroisopropylidene diphenyl-1,1 '
Instead of 8.46 g (0.02 mol) of dicarboxylic acid chloride, 5.42 g (0.02 mol) of tetrafluoroisophthalic chloride synthesized from tetrafluoroisophthalic acid was used.
mol)), a polybenzoxazole was prepared and evaluated in the same manner as in Example 1.
【0039】(実施例3)式(7)で表されるビスアミ
ノフェノール化合物14.51g(0.02mol)の
代わりに式(17)で表されるビスアミノフェノール化
合物18.81g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。Example 3 Instead of 14.51 g (0.02 mol) of the bisaminophenol compound represented by the formula (7), 18.81 g (0.02 mol) of the bisaminophenol compound represented by the formula (17) A polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.
【0040】(実施例4)式(7)で表されるビスアミ
ノフェノール化合物14.51g(0.02mol)の
代わりに式(20)で表されるビスアミノフェノール化
合物24.57g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。Example 4 In place of 14.51 g (0.02 mol) of the bisaminophenol compound represented by the formula (7), 24.57 g (0.02 mol) of the bisaminophenol compound represented by the formula (20) A polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.
【0041】(実施例5)式(7)で表されるビスアミ
ノフェノール化合物14.51g(0.02mol)の
代わりに式(18)で表されるビスアミノフェノール化
合物17.29g(0.015mol)と2,2’−ビ
ス(3−アミノ−4−ヒドロキシ−5−トリフルオロフ
ェニル)ヘキサフルオロプロパン2.51g(0.00
5mol)を用いた以外は実施例1と同様にしてポリベ
ンゾオキサゾールを作製し、評価を行った。Example 5 17.29 g (0.015 mol) of a bisaminophenol compound represented by the formula (18) instead of 14.51 g (0.02 mol) of the bisaminophenol compound represented by the formula (7) ) And 2.51 g of 2,2′-bis (3-amino-4-hydroxy-5-trifluorophenyl) hexafluoropropane (0.001 g)
Polybenzoxazole was prepared and evaluated in the same manner as in Example 1 except that 5 mol) was used.
【0042】(比較例1)式(7)で表されるビスアミ
ノフェノール化合物14.51g(0.02mol)の
代わりに3,3’−アミノ−4,4’−ヒドロキシビフ
ェニル4.32g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。Comparative Example 1 4.32 g of 3,3′-amino-4,4′-hydroxybiphenyl (0%) instead of 14.51 g (0.02 mol) of the bisaminophenol compound represented by the formula (7) Polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.
【0043】(比較例2)2,2−ビス[4、4’−
(4−アミノフェノキシ)フェニル]プロパン10.3
6g(0.02mol)を乾燥したN−メチル−2−ピ
ロリドン150gに溶解する。乾燥窒素下、10℃に溶
液を冷却してピロメリット酸二無水物4.36を投入し
た。投入から5時間後に室温まで戻し、室温で2時間攪
拌し、ポリイミド前駆体溶液を得た。このポリイミド前
駆体を孔径0.2μmのテフロンフィルターで濾過しワ
ニスを得た。このワニスをガラス板上にギャップ300
μmのドクターナイフを用いて塗布した。その後、オー
ブン中で70℃1時間乾燥し、はく離して膜厚20μm
のポリイミド前駆体フィルムを得た。そのフィルムを金
枠で固定し、150℃/30分、250℃/30分、3
50℃/30分の順で窒素雰囲気下で加熱し、ポリイミ
ドを得た。このポリイミドについて、実施例1と同様に
評価を行った。実施例と比較例での評価結果を表1に示
す。Comparative Example 2 2,2-bis [4,4'-
(4-aminophenoxy) phenyl] propane 10.3
6 g (0.02 mol) is dissolved in 150 g of dried N-methyl-2-pyrrolidone. The solution was cooled to 10 ° C. under dry nitrogen, and 4.36 pyromellitic dianhydride was added. Five hours after the introduction, the temperature was returned to room temperature, and the mixture was stirred at room temperature for 2 hours to obtain a polyimide precursor solution. The polyimide precursor was filtered through a Teflon filter having a pore size of 0.2 μm to obtain a varnish. This varnish is placed on a glass plate with a gap of 300.
The coating was performed using a μm doctor knife. Then, it is dried in an oven at 70 ° C for 1 hour, peeled off, and the film thickness is 20 μm.
Was obtained. The film was fixed with a metal frame, 150 ° C./30 minutes, 250 ° C./30 minutes, 3
Heating was performed under a nitrogen atmosphere in the order of 50 ° C./30 minutes to obtain a polyimide. This polyimide was evaluated in the same manner as in Example 1. Table 1 shows the evaluation results of the examples and the comparative examples.
【0044】[0044]
【表1】 [Table 1]
【0045】表1の結果から、実施例1〜5の本発明の
ポリベンゾオキサゾール前駆体を用いて作製したポリベ
ンゾオキサゾールはいずれも誘電率が低く2.0〜2.
3であり、さらに耐熱性が高く、吸水率が低いという良
好な特性を示した。From the results shown in Table 1, all of the polybenzoxazoles prepared using the polybenzoxazole precursors of the present invention of Examples 1 to 5 have low dielectric constants and are 2.0 to 2.0.
3, indicating good properties such as high heat resistance and low water absorption.
【0046】比較例1では、ポリベンゾオキサゾールで
はあるものの本発明の一般式(1)で表される繰り返し
単位を有していないので、実施例1〜5に比べて誘電率
が高く、2.5を下回る値は得られなかった。In Comparative Example 1, although it is a polybenzoxazole, it does not have the repeating unit represented by the general formula (1) of the present invention, and thus has a higher dielectric constant than Examples 1 to 5. No values below 5 were obtained.
【0047】比較例2ではポリイミド前駆体を用いて作
製したポリイミドを用いたために、誘電率と吸水率が実
施例1〜5に比べて高い値しか得られなかった。In Comparative Example 2, since the polyimide prepared using the polyimide precursor was used, the dielectric constant and the water absorption were higher than those of Examples 1 to 5.
【0048】[0048]
【発明の効果】本発明のポリベンゾオキサゾール前駆体
及びポリベンゾオキサゾールは、電気特性、耐熱性、物
理特性に優れた樹脂に関するものである。従って、これ
らの特性が要求される様々な分野、例えば半導体用の層
間絶縁膜、保護膜、多層回路の層間絶縁膜、フレキシブ
ル銅張版のカバーコート、ソルダーレジスト膜、液晶配
向膜などとして有用な高分子材料である。The polybenzoxazole precursor and polybenzoxazole of the present invention relate to a resin having excellent electrical properties, heat resistance and physical properties. Therefore, these properties are required in various fields such as interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad plates, solder resist films, and liquid crystal alignment films. It is a polymer material.
Claims (2)
有するポリベンゾオキサゾール前駆体。 【化1】 (式中、nは1〜1000までの整数を示す。R1、R2
はCmF2m+1で表されるフルオロアルキル基であり互い
に同じであっても異なってもよい。mは1〜10までの
整数を示す。Xは一般式(2)または一般式(3)で表
わされる2価の有機基であり、Yは2価以上の有機基を
表す。) 【化2】 (式中、R3は一般式(4)で表されるフルオロシクロ
アルキル基であり、R4〜R6はH、一般式(4)で表さ
れるフルオロシクロアルキル基、Fまたは1価の有機基
であり互いに同じであっても異なってもよい。) 【化3】 (式中、R7は一般式(4)で表されるフルオロシクロ
アルキル基であり、R8〜R10はH、一般式(4)で表
されるフルオロシクロアルキル基、Fまたは1価の有機
基であり互いに同じであっても異なってもよい。) 【化4】 (式中、kは3〜7までの整数を表す。)1. A polybenzoxazole precursor having a repeating unit represented by the general formula (1). Embedded image (In the formula, n represents an integer of 1 to 1000. R 1 , R 2
Is a fluoroalkyl group represented by C m F 2m + 1, which may be the same or different. m represents an integer of 1 to 10. X represents a divalent organic group represented by the general formula (2) or (3), and Y represents a divalent or higher valent organic group. ) (Wherein, R 3 is a fluorocycloalkyl group represented by the general formula (4), R 4 to R 6 are H, a fluorocycloalkyl group represented by the general formula (4), F or monovalent These are organic groups and may be the same or different.) (Wherein, R 7 is a fluorocycloalkyl group represented by the general formula (4), R 8 to R 10 are H, a fluorocycloalkyl group represented by the general formula (4), F or monovalent These are organic groups and may be the same or different from each other.) (In the formula, k represents an integer of 3 to 7.)
ル前駆体を脱水閉環した構造を有するポリベンゾオキサ
ゾール。2. A polybenzoxazole having a structure in which the polybenzoxazole precursor according to claim 1 is dehydrated and closed.
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|---|---|---|---|
| JP10306730A JP2000128987A (en) | 1998-10-28 | 1998-10-28 | Polybenzoxazole precursor and polybenzoxazole |
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|---|---|---|---|
| JP10306730A JP2000128987A (en) | 1998-10-28 | 1998-10-28 | Polybenzoxazole precursor and polybenzoxazole |
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|---|---|
| JP2000128987A true JP2000128987A (en) | 2000-05-09 |
Family
ID=17960618
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|---|---|---|---|
| JP10306730A Pending JP2000128987A (en) | 1998-10-28 | 1998-10-28 | Polybenzoxazole precursor and polybenzoxazole |
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| Country | Link |
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| JP (1) | JP2000128987A (en) |
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