JP2000124164A - Manufacture of semiconductor device and mounting method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To aim to improve the production efficiency of a semiconductor device and the reliability of the device. SOLUTION: This manufacturing method is provided with a separating process of forming voids between semiconductor chips 2 in a semiconductor wafer 1, formed with a plurality of the semiconductor chips 2, which are respectively provided with bump electrodes 3 for connecting with external electrodes, a resin-sealing process of sealing the chips 2 and the electrodes 3 with a sealing resin 6 by feeding the sealing resin 6 in voids, to the surfaces of the chips 2 and between the electrodes 3 as the chips 2 are mounted on a dicing tape 4 and a separated process 2 of separating the chips 2 into individual resin-sealed semiconductor chips 7, by cutting simultaneously the resin 6 between the chips 2 and the tape 4. Moreover, the elements 3 in a semiconductor device manufactured in this way are pressed to a mounting substrate 8 and are mounted on the substrate 8 by heating the electrodes 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device and a method of mounting the same, and more particularly to a method of manufacturing and mounting a resin-sealed semiconductor chip.

[0002]

2. Description of the Related Art Conventionally, in manufacturing a semiconductor device of a chip size package type, as shown in, for example, Japanese Patent Application Laid-Open No. 9-232256, a bump electrode is formed on an electrode pad of a semiconductor chip on which wiring is formed. After the bump electrodes are die-bonded to the mounting substrate by pressure bonding or the like, a resin (hereinafter, referred to as an underfill resin) is applied to a gap between the wiring forming surface of the semiconductor chip (the surface on which the bump electrodes are formed) and the mounting substrate. It depends on the manufacturing method to be injected. According to this manufacturing method, the semiconductor chip can be mounted on the mounting board in a state where the wiring forming surface of the semiconductor chip and the bump electrodes are sealed with resin. However, in such a manufacturing method, not only time is required for the underfill resin sealing step when mounting on the mounting board, but also the fluidity of the underfill resin, the amount of the filler, and the like are restricted, so that sufficient reliability is required. It is difficult to secure the sex.

[0003]

As described above, in the conventional method of manufacturing a semiconductor device, the process is complicated because the underfill resin needs to be injected into the gap between the semiconductor chip and the mounting substrate. On the other hand, the underfill resin has a problem that it is difficult to control the fluidity and the amount of the filler for injection without voids.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a semiconductor device manufacturing method and a mounting method capable of improving semiconductor device manufacturing efficiency and semiconductor device reliability. And

[0005]

The invention according to claim 1 is
A plurality of semiconductor chips are formed, bump electrodes are provided on each of the semiconductor chips, and a dicing tape is provided on a surface opposite to the surface on which the bump electrodes are provided. A separating step 1 for forming a gap to be separated without cutting the dicing tape, and a sealing resin in a gap between the bump electrode surface of the semiconductor chip and each semiconductor chip while the respective semiconductor chips are mounted on the tape. A resin encapsulation step of simultaneously encapsulating the bump electrode surface and the semiconductor chip end surface to form a resin layer,
A method for manufacturing a semiconductor device, comprising: a resin reaction accelerating step for promoting the reaction of the resin layer; and a separation step 2 for cutting the semiconductor chips into individual resin-sealed semiconductor chips.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, a step of expanding a dicing tape is added after the separation step 1 is completed and before the resin sealing step. The gap width between the semiconductor chips is increased.

According to a third aspect of the present invention, in the method for manufacturing a semiconductor device according to the first aspect, a single or a plurality of sealing resins having different characteristics are used as the sealing resin used in the resin sealing step. is there.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, a spraying method, a spin coating method, or a printing method is used as a method of supplying the sealing resin in the resin sealing step. .

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, a method using a molding die is applied to a method of supplying a sealing resin in a resin sealing step.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device according to the fifth aspect, a release film is mounted on a surface of a molding die.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the supply of the sealing resin in the resin sealing step is performed in a reduced-pressure atmosphere.

According to an eighth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the promotion of the resin reaction in the resin reaction promoting step is performed by heating or light irradiation.

According to a ninth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, at least a tip portion of the bump electrode covered with the sealing resin is exposed from the sealing resin after the resin sealing step. A bump electrode exposure step is added.

According to a tenth aspect of the present invention, in the method of manufacturing a semiconductor device according to the ninth aspect, the bump electrode is exposed in the bump electrode exposing step by covering the bump electrode surface with a release film after the resin sealing step. It is by pressing means.

According to an eleventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the ninth aspect, the exposing of the bump electrode in the bump electrode exposing step is performed by at least one of laser light irradiation, excimer laser, etching, mechanical polishing, and blasting. It is by one means.

According to a twelfth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, a laser is used for cutting in the separation step 2.

According to a thirteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, a bump electrode is provided on the semiconductor chip, and the upper surface of the semiconductor chip, the bump electrode surface, and the side surface of the semiconductor chip are sealed. This is a semiconductor device mounting method in which a semiconductor device sealed with a sealing resin is prepared, and the bump electrode surface of the semiconductor device is connected to a mounting substrate by thermocompression bonding.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing and mounting a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. Embodiment 1 FIG. FIG. 1 shows a manufacturing process according to a first embodiment of the present invention. The manufacturing method will be described below with reference to FIG. First, a large number of bump electrodes 3 are formed on electrodes of a plurality of semiconductor chips 2 having integrated circuits formed on a semiconductor wafer 1 (see FIG. 1A). FIG.
As shown in FIG. 2B, a dicing tape 4 is attached to a surface opposite to the surface of the semiconductor wafer 1 on which the bump electrodes 3 are formed.

Next, the semiconductor wafer 1 on which the bump electrodes 3 are formed is fixed to a mounting jig 5, and a gap is formed between the semiconductor chips 2 of the semiconductor wafer 1 using a dicer or the like so as not to cut the dicing tape 4. And individual semiconductor chips 2
Is performed (see FIG. 1C). At this time, all the individual semiconductor chips 2 are fixed on the dicing tape 4.

Next, a sealing resin 6 is injected between the semiconductor chips 2 and between the bump electrode 3 forming surface and the bump electrode 3 surface of the semiconductor chip 2. The sealing resin 6 has a viscosity that can be injected between the semiconductor chips 2. The injection method depends on the viscosity of the resin, but may be a coating method such as a spray method or a spin coating method, or a printing method such as screen printing (see FIG. 1D). In this sealing resin step, if there is a concern about occurrence of voids in the sealing resin 6, even if the high-viscosity sealing resin 6 is applied by performing the sealing resin step in a reduced pressure system, The generation of voids in the gap between the bump electrodes 3 and between the semiconductor chips 2 can be prevented.

After injecting the sealing resin 6, the reaction is advanced until the tackiness of the sealing resin 6 is lost while securing the fluidity by heating or light irradiation or the like to form a resin layer. An epoxy resin can be used as the sealing resin 6 whose reaction proceeds by heating. As the sealing resin whose reaction proceeds by light irradiation, an epoxy resin mixed with an acrylic resin, or an epoxy terminal group is used. Those into which an acrylic group has been introduced can be used. When the bump electrode 3 is covered with the sealing resin 6, in order to ensure conduction between the mounting substrate and the bump electrode 3 during mounting, laser light irradiation, excimer laser, etching, mechanical polishing, The surface of the bump electrode 3 may be exposed using blasting or the like.

Next, in order to separate the resin-sealed semiconductor chips 2 from each other, a central portion of a sealing resin 6 (also referred to as a resin layer) filled between the semiconductor chips 2 is separated by using a laser beam. Cut (see FIG. 1 (e)). Through this step, the resin-encapsulated semiconductor chip 7 with the dicing tape 4 mounted thereon is completed (see FIG. 1E).

Then, the bump electrodes 3 of the individually separated semiconductor chips 5 are mounted using a reflow furnace or the like while being pressed against the mounting substrate 8 (see FIG. 1 (g)). At this point, at the same time that the bump electrodes 3 are electrically connected to the mounting substrate 8, the sealing resin 6 is melted and then hardened. By this curing, the sealing resin 6 and the mounting substrate 8 are bonded.

Finally, by removing the dicing tape 4, a semiconductor device mounted on a mounting substrate is completed as shown in FIG. 1 (h).

Embodiment 2 FIG. 2 shows a manufacturing process according to the second embodiment of the present invention. In the first embodiment, when the space between the semiconductor chips 2 is small and it is difficult to inject the sealing resin in the sealing resin step, as shown in FIG. After the space is widened, it is possible to mount the device as it is on a jig to improve the injection property of the sealing resin.

Embodiment 3 FIG. In the sealing resin step of the first embodiment, a plurality of sealing resins 6 are applied. As shown in FIG. 3, for example, a method of applying a sealing resin 6a filled with a high amount of filler first, and then applying a sealing resin 6b having a low filler filling rate thereon, is used. The sealing resin 6 having a low thermal expansion is interposed on the second side, and a resin having a high coefficient of thermal expansion is interposed on the mounting substrate side, so that the thermal reliability of the semiconductor device such as a heat cycle is improved.

Embodiment 4 After the sealing resin 6 is applied in the sealing resin process of the first embodiment, as shown in FIG. Press 9. By covering and pressing with the release film 7 in this manner, the surface of the bump electrode 3 can be prevented from being exposed from the sealing resin due to the elasticity of the release film 7 and covered with the sealing resin, and at the same time, the handling property can be improved. Also improve.

Embodiment 5 In the sealing resin process of the first embodiment, the semiconductor chip is sealed using a molding die 10 as shown in FIG. 5 instead of the coating method. When using the molding die 10, an injection molding method or a method in which a sealing resin is dropped on the surface on which the bump electrodes 3 are formed, and the molding die 10 is pressed against the dropped surface and heated to cure the sealing resin. Can be applied. Heating is performed by the molding die 10
And a method such as heating by the heater. All other steps are the same as in the first embodiment.

Embodiment 6 FIG. In the encapsulating resin step of the fifth embodiment, as shown in FIG. 6, by attaching the release film 9 to the surface of the molding die 10 which comes into contact with the surface on which the bump electrodes 3 are formed in advance in the resin injecting step. In addition, it is possible to prevent the surface of the bump electrode 3 from being covered with the sealing resin, and at the same time, to improve the handleability.

[0030]

According to the present invention, bump electrodes are formed on a plurality of semiconductor chips formed on a semiconductor wafer, and a dicing tape is mounted on a surface of the semiconductor wafer opposite to the bump electrode formation surface. By forming a gap between each semiconductor chip without cutting the tape, and sealing the gap, the bump electrode formation surface and the bump electrode surface with resin, it is possible to securely seal resin without bubbles and mount semiconductor devices. In this case, it is not necessary to fill the space between the semiconductor chip and the mounting substrate with the underfill resin, thereby facilitating the mounting process. In addition, it is possible to prevent the wafer from being warped or cracked due to temporary curing of the sealing resin after resin sealing. Further, the bumpability is improved by covering the bump electrode surface and the semiconductor chip end surface with the resin layer in the resin sealing step, and the resin layer protects the chip surface and reduces the stress generated at the joint between the semiconductor chip and the bump. It has a relaxing effect.

According to the second aspect of the present invention, when the interval between the separated semiconductor chips is small, the step of expanding the dicing tape is performed to easily increase the gap between the semiconductor chips, thereby facilitating the process. In the resin sealing step, the sealing resin is uniformly filled between the semiconductor chips.

According to the third aspect of the present invention, the reliability of the semiconductor device can be improved by using a plurality of sealing resins.

According to the fourth aspect of the present invention, the resin layer is reliably formed on the entire surface of the bump electrode forming surface and the gap by a simple method such as a spray method, a spin coating method and a printing method. be able to.

According to the fifth aspect of the present invention, by using a molding die, the unevenness of the sealing resin surface after resin sealing is reduced, and at the same time, pressure is applied when the sealing resin is injected. Accordingly, it is possible to fill the sealing resin into a narrow gap between bump electrodes, between semiconductor chips, and the like.

According to the sixth aspect of the present invention, it is possible to prevent the sealing resin from fogging on the surface of the bump electrode by mounting the release film in advance on the surface of the molding die in contact with the bump electrode. Becomes

According to the seventh aspect of the present invention, even when the gap between the semiconductor chips and the distance between the bump electrodes are reduced by sealing with resin under reduced pressure, the sealing is easily performed without generating voids. The effect of filling the sealing resin can be increased.

According to the invention of claim 8, the reaction rate of the sealing resin layer is increased by heating or light irradiation, and the temporary curing is carried out, so that the handleability of the semiconductor chip is improved and, at the same time, the dividing step in the subsequent step is performed. 2 is simply performed.

According to the ninth to eleventh aspects of the present invention, at least the tip of the bump electrode is exposed from the sealing resin, so that the electrical connection between the bump electrode and the outside, for example, a mounting substrate is improved. Be certain. By covering the bump electrode surface with the release film after applying the sealing resin, the effect of preventing the sealing resin from covering the bump electrode surface is obtained, and the handling property is also improved.

According to the eleventh aspect of the present invention, when laser light irradiation or excimer laser is used,
The tip of the bump electrode can be easily and accurately exposed, and when etching, mechanical polishing, or blasting is used, the tip of the bump electrode can be exposed at low cost.

According to the twelfth aspect of the present invention, by using a laser beam in the separation step 2, the central portion of the sealing resin filled between the semiconductor chips can be accurately separated, and the individual semiconductor chips can be separated. The dimensions become uniform,
A dicing tape or a dicing tape and a release film can be cut at a time.

According to the thirteenth aspect of the present invention, in bonding the bump electrode of the semiconductor device to the mounting substrate, the bump electrode is formed on the mounting substrate after the sealing resin on the bump electrode forming surface is melted during thermocompression bonding. Therefore, the semiconductor chip and the mounting board are firmly bonded to each other via the sealing resin, and the reliability of the bump electrodes is significantly improved both thermally and electrically.

[Brief description of the drawings]

FIG. 1 is a diagram showing a manufacturing process and a mounting process of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining a manufacturing step of the semiconductor device according to the second embodiment of the present invention.

FIG. 3 is a cross-sectional view for describing a manufacturing step of a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view for describing a manufacturing step of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a cross-sectional view for describing a manufacturing step of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a cross-sectional view for describing a manufacturing step of a semiconductor device according to a sixth embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 1 semiconductor wafer, 2, 7 semiconductor chip, 3 bump electrode, 4 dicing tape, 5 mounting jig, 6 sealing resin (resin layer), 8 mounting substrate, 9 release film, 1
0 Mold for molding,

Claims (13)

[Claims] 1. A semiconductor wafer comprising a plurality of semiconductor chips, a bump electrode provided on each of the semiconductor chips, and a dicing tape provided on a surface opposite to a surface on which the bump electrodes are provided. Between the semiconductor chips, the dicing tape is not cut, and a separation step 1 for forming a gap to be separated, and the semiconductor chip is mounted on the tape and the bump electrode surface of the semiconductor chip and each semiconductor chip are separated. A resin sealing step of supplying a sealing resin to the gap to simultaneously seal the bump electrode surface and the semiconductor chip end surface to form a resin layer, a resin reaction accelerating step of promoting a reaction of the resin layer, A method of manufacturing a semiconductor device, comprising: a separation step 2 of cutting the semiconductor chip into individual resin-sealed semiconductor chips. 2. The method according to claim 1, wherein after the separation step 1 is completed, before the resin sealing step, a step of expanding the dicing tape is added to increase the gap width between the semiconductor chips. Of manufacturing a semiconductor device. 3. A sealing resin used in a resin sealing step,
2. The method according to claim 1, wherein a plurality of sealing resins having a single property or different properties are used. 4. The method of manufacturing a semiconductor device according to claim 1, wherein a method of supplying a sealing resin in the resin sealing step is a spray method, a spin coating method, or a printing method. 5. The method of manufacturing a semiconductor device according to claim 1, wherein a method using a molding die is applied to a method of supplying the sealing resin in the resin sealing step. 6. The method for manufacturing a semiconductor device according to claim 5, wherein a release film is mounted on the surface of the molding die. 7. The method according to claim 1, wherein the supply of the sealing resin in the resin sealing step is performed in a reduced-pressure atmosphere.
The manufacturing method of the semiconductor device described in the above. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the promotion of the resin reaction in the resin reaction promoting step is performed by heating or light irradiation. 9. The semiconductor device according to claim 1, further comprising, after the resin sealing step, a bump electrode exposing step of exposing at least a tip portion of the bump electrode covered with the sealing resin from the sealing resin. Manufacturing method. 10. The method of manufacturing a semiconductor device according to claim 9, wherein the exposing of the bump electrode in the bump electrode exposing step is performed by means for coating and pressing a release film on the bump electrode surface after the resin sealing step. . 11. The manufacturing of a semiconductor device according to claim 9, wherein the exposure of the bump electrode in the bump electrode exposure step is performed by at least one of laser light irradiation, excimer laser, etching, mechanical polishing, and blasting. Method. 12. The method of manufacturing a semiconductor device according to claim 1, wherein a laser is used for cutting in the separation step 2. 13. A semiconductor device in which bump electrodes are provided on a semiconductor chip, and a top surface of the semiconductor chip, a bump electrode surface and a side surface of the semiconductor chip are sealed with a sealing resin, and the bump electrode of the semiconductor device is prepared. A method for mounting a semiconductor device, comprising connecting a surface to a mounting substrate by thermocompression bonding.