JP2000114727A - Multilayer printed wiring board - Google Patents
Multilayer printed wiring boardInfo
- Publication number
- JP2000114727A JP2000114727A JP30324798A JP30324798A JP2000114727A JP 2000114727 A JP2000114727 A JP 2000114727A JP 30324798 A JP30324798 A JP 30324798A JP 30324798 A JP30324798 A JP 30324798A JP 2000114727 A JP2000114727 A JP 2000114727A
- Authority
- JP
- Japan
- Prior art keywords
- plated
- resin
- wiring board
- holes
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 239000004593 Epoxy Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 24
- 239000003822 epoxy resin Substances 0.000 claims description 17
- 229920000647 polyepoxide Polymers 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052802 copper Inorganic materials 0.000 abstract description 25
- 239000010949 copper Substances 0.000 abstract description 25
- 238000012360 testing method Methods 0.000 abstract description 24
- 230000008602 contraction Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000004132 cross linking Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 26
- 238000007747 plating Methods 0.000 description 21
- 238000007772 electroless plating Methods 0.000 description 15
- 229920006015 heat resistant resin Polymers 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 239000011162 core material Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920012287 polyphenylene sulfone Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- -1 DPE6A) 1.5 g Substances 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- VFFQCUJVGMRYIF-UHFFFAOYSA-N copper;1h-imidazole Chemical compound [Cu+2].C1=CNC=N1 VFFQCUJVGMRYIF-UHFFFAOYSA-N 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、スルーホール及び
導体回路が形成された基板上に層間樹脂絶縁層および導
体回路が交互に積層形成されてなり、異なる層の導体回
路同士が層間樹脂絶縁層に設けられたバイアホールで電
気的に接続されてなるビルドアップ多層プリント配線板
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an interlayer resin insulation layer and a conductor circuit alternately laminated on a substrate having a through hole and a conductor circuit formed thereon, and the conductor circuits of different layers are connected to each other by an interlayer resin insulation layer. The present invention relates to a build-up multilayer printed wiring board electrically connected to via holes provided in a multi-layer printed wiring board.
【0002】[0002]
【従来の技術】近年、高密度多層化の要求により、ビル
ドアップ多層プリント配線板が注目されている。この多
層配線板は、コア基板上に導体回路と層間樹脂層が交互
に積層された多層配線板であり、各層の導体回路がバイ
アホールで接続されている。このようなビルドアップ多
層配線板のコア基板としては、従来より、FR−4グレ
ードのガラスエポキシ基板が採用されてきた。2. Description of the Related Art In recent years, build-up multilayer printed wiring boards have been receiving attention due to demands for higher density multilayers. This multilayer wiring board is a multilayer wiring board in which conductive circuits and interlayer resin layers are alternately laminated on a core substrate, and the conductive circuits of each layer are connected by via holes. As a core substrate of such a build-up multilayer wiring board, an FR-4 grade glass epoxy substrate has been conventionally used.
【0003】しかしながら、このようなFR−4グレー
ドのガラスエポキシ基板は、HAST試験やスチーム試
験などでめっきスルーホール間の絶縁抵抗値が低下した
り、ヒートサイクル試験によりめっきスルーホールチェ
ーンの抵抗値が大きく変化してしまうという問題が発生
した。即ち、長期使用した際の信頼性が低かった。この
ような問題を解決すべく、BT(ビスマレイミド−トリ
アジン)樹脂を用いたコア基板が提案されているが、価
格の高いものであった。However, in such FR-4 grade glass epoxy substrates, the insulation resistance between plated through-holes decreases in a HAST test or a steam test, or the resistance of a plated through-hole chain decreases in a heat cycle test. The problem of a large change occurred. That is, the reliability after long-term use was low. In order to solve such a problem, a core substrate using a BT (bismaleimide-triazine) resin has been proposed, but it has been expensive.
【0004】[0004]
【発明が解決しようとする課題】本発明者らは、BT樹
脂のような価格の高い樹脂ではなく、エポキシ樹脂のよ
うな低価格の樹脂により、スルーホール間の絶縁抵抗値
の低下、スルーホール間を接続する導体回路の抵抗値の
変動を抑制できないかと考え、このような問題は、樹脂
のTg点に起因するという意外な事実を知見するに至っ
た。本発明は、低価格でHAST試験やスチーム試験な
どでスルーホール間の絶縁抵抗値が低下したり、ヒート
サイクル試験によりスルーホール間を接続する導体回路
の抵抗値の変動がない多層プリント配線板を提案する。SUMMARY OF THE INVENTION The present inventors have proposed a method of reducing the insulation resistance between through-holes and using a low-cost resin such as an epoxy resin instead of a high-priced resin such as a BT resin. We considered whether it was possible to suppress the fluctuation of the resistance value of the conductor circuit that connects between them, and came to discover an unexpected fact that such a problem is caused by the Tg point of the resin. The present invention provides a low-cost multilayer printed wiring board in which the insulation resistance between through-holes is reduced by a HAST test or a steam test, and the resistance value of a conductor circuit connecting between the through-holes is changed by a heat cycle test. suggest.
【0005】[0005]
【課題を解決するための手段】本発明は、スルーホール
及び導体回路が設けられた基板上に層間樹脂絶縁層およ
び導体回路が交互に積層形成されてなり、異なる層の導
体回路同士が層間樹脂絶縁層に設けられたバイアホール
で電気的に接続されてなるビルドアップ多層配線板にお
いて、前記基板は、Tg点190℃以上のエポキシ樹脂
を使用したガラスエポキシ基板であることを特徴とする
多層プリント配線板である。According to the present invention, an interlayer resin insulating layer and a conductor circuit are alternately laminated on a substrate provided with a through hole and a conductor circuit. In a build-up multilayer wiring board electrically connected by via holes provided in an insulating layer, the substrate is a glass epoxy substrate using an epoxy resin having a Tg point of 190 ° C. or higher. It is a wiring board.
【0006】本発明者らは鋭意研究した結果、HAST
試験やスチーム試験などでスルーホール間の絶縁抵抗値
が低下するのは、スルーホールを構成する銅などの金属
がイオン化してスルーホール間を移動(マイグレーショ
ン)し、絶縁抵抗値を低下させてしまうためであること
を知見した。The present inventors have conducted intensive studies and have found that HAST
The reason why the insulation resistance value between through holes decreases in a test or a steam test is that a metal such as copper constituting the through holes is ionized and moves (migrate) between the through holes, thereby lowering the insulation resistance value. I knew it was because of it.
【0007】また、ヒートサイクル試験によりスルーホ
ール間を接続する導体回路の抵抗値が変動するのは、熱
膨張収縮により、導体回路またはめっきスルーホールが
破断するためであることも併せて知見した。It has also been found that the resistance value of the conductor circuit connecting between the through holes varies in the heat cycle test because the conductor circuit or the plated through hole breaks due to thermal expansion and contraction.
【0008】マイグレーションや熱膨張収縮を低減させ
るためには、エポキシ樹脂の架橋密度を上げて、Tg点
を上げればよいことに想達した。エポキシ樹脂のTg点
が190℃以上であれば、これらの問題を抑制できる。
これにより、めっきスルーホールを構成する銅などの金
属がイオン化してスルーホール間を移動(マイグレーシ
ョン)し、HAST試験やスチーム試験などで、めっき
スルーホール間の絶縁抵抗値を低下させることがなくな
る。また、ヒートサイクル試験で熱膨張収縮により、導
体回路またはめっきスルーホールが破断することによる
抵抗値変動がなくなる。また、エポキシ樹脂は、BT樹
脂に比べて低コストである。It has been found that in order to reduce migration and thermal expansion / shrinkage, the crosslinking density of the epoxy resin should be increased to increase the Tg point. If the Tg point of the epoxy resin is 190 ° C. or higher, these problems can be suppressed.
As a result, the metal such as copper constituting the plated through-holes is ionized and moves (migrate) between the through-holes, so that the insulation resistance between the plated through-holes does not decrease in a HAST test, a steam test, or the like. In addition, resistance fluctuation caused by breakage of the conductor circuit or the plated through hole due to thermal expansion and contraction in the heat cycle test is eliminated. Further, the epoxy resin is lower in cost than the BT resin.
【0009】Tg点が190℃以上(DMA法(昇温:
2°C/分))のガラスエポキシ基板としては、マスラ
ミネーション方式の多層配線板用に開発された既存の基
板を流用できる。例えば、三菱瓦斯化学 HL830
(Tg点217°C) HL830FC(Tg点212
°C) 日立化成工業 MCL−E−679LD(Tg
点205〜215°C) MCL−E−679F(Tg
点205〜217°C) 松下電工R−5715(Tg
点190°C)などである。When the Tg point is 190 ° C. or higher (DMA method (temperature rise:
An existing substrate developed for a mass lamination type multilayer wiring board can be used as the glass epoxy substrate at 2 ° C./min)). For example, Mitsubishi Gas Chemical HL830
(Tg point 217 ° C) HL830FC (Tg point 212
° C) Hitachi Chemical MCL-E-679LD (Tg
Point 205-215 ° C) MCL-E-679F (Tg
Point 205-217 ° C) Matsushita Electric Works R-5715 (Tg
Point 190 ° C.).
【0010】このようなガラスエポキシ基板あるいはこ
の銅張積層板に、レーザやドリルで孔を明け、電気めっ
き、無電解めっき、スパッタ、蒸着などにより、内壁面
を金属化することによりスルーホールを形成する。この
スルーホールに充填材を充填することができる。また、
金属化されたスルーホール内壁は、粗化されていてもよ
い。充填材としては、ビスフェノールF型エポキシ樹脂
およびシリカ、アルミナ等の無機粒子からなるもの、ま
た、金属粒子および樹脂からなるものなど各種のものを
使用できる。[0010] A hole is formed in such a glass epoxy substrate or this copper clad laminate by laser or drill, and a through hole is formed by metallizing the inner wall surface by electroplating, electroless plating, sputtering, vapor deposition or the like. I do. This through hole can be filled with a filler. Also,
The metalized through-hole inner wall may be roughened. As the filler, various materials such as those composed of bisphenol F type epoxy resin and inorganic particles such as silica and alumina, and those composed of metal particles and resin can be used.
【0011】このようにして形成されたスルーホール形
成基板に導体回路を設ける。導体回路はエッチング処理
により形成する。導体回路表面は、密着性改善のため粗
化処理することが望ましい。ついで層間樹脂絶縁層を設
ける。[0011] A conductor circuit is provided on the through-hole forming substrate thus formed. The conductor circuit is formed by an etching process. The surface of the conductive circuit is desirably subjected to a roughening treatment for improving the adhesion. Next, an interlayer resin insulating layer is provided.
【0012】前記絶縁樹脂は、熱硬化性樹脂、熱可塑性
樹脂、あるいはこれらの複合樹脂が用いられる。熱硬化
性樹脂としては、エポキシ樹脂、フェノール樹脂、ポリ
イミド樹脂等が用いられる。また熱可塑性樹脂として
は、熱可塑性樹脂としては、ポリエーテルスルフォン
(PES)、ポリスルフォン(PSF)、ポリフェニレ
ンスルフォン(PPS)、ポリフェニレンサルファイド
(PPES)、ポリフェニルエーテル(PPE)、ポリ
エーテルイミド(PI)、フッ素樹脂などを使用でき
る。As the insulating resin, a thermosetting resin, a thermoplastic resin, or a composite resin thereof is used. As the thermosetting resin, an epoxy resin, a phenol resin, a polyimide resin, or the like is used. Further, as the thermoplastic resin, as the thermoplastic resin, polyether sulfone (PES), polysulfone (PSF), polyphenylene sulfone (PPS), polyphenylene sulfide (PPES), polyphenyl ether (PPE), polyether imide (PI ), Fluorine resin and the like can be used.
【0013】本発明では、樹脂絶縁層は、無電解めっき
用接着剤でもよい。例えば、酸や酸化剤に難溶性の耐熱
性樹脂中に酸、酸化剤によって溶解する粒子を含ませて
おき、この粒子を酸や酸化剤で溶解することで、絶縁樹
脂層の表面を粗化することができる。かかる耐熱性樹脂
粒子としては、アミノ樹脂(メラミン樹脂、尿素樹脂、
グアナミン樹脂等)、エポキシ樹脂(ビスフェノール型
エポキシ樹脂をアミン系硬化剤で硬化させたものが最
適)、ビスマレイミド−トリアジン樹脂等からなる耐熱
性樹脂粒子を用いることができる。In the present invention, the resin insulating layer may be an adhesive for electroless plating. For example, a heat-resistant resin that is hardly soluble in an acid or an oxidizing agent contains particles that can be dissolved by the acid or the oxidizing agent, and the particles are dissolved by the acid or the oxidizing agent to roughen the surface of the insulating resin layer. can do. Examples of such heat-resistant resin particles include amino resins (melamine resins, urea resins,
Heat-resistant resin particles such as a guanamine resin), an epoxy resin (a bisphenol-type epoxy resin cured with an amine-based curing agent is optimal), and a bismaleimide-triazine resin can be used.
【0014】また、かかる無電解めっき用接着剤には、
特に、硬化処理された耐熱性樹脂粒子、無機粒子や繊維
質フィラー等を、必要により含ませることができる。か
かる耐熱性樹脂粒子には、(1) 平均粒径が10μm以下の
耐熱性樹脂粉末、(2) 平均粒径が2μm以下の耐熱性樹
脂粉末を凝集させた凝集粒子、(3) 平均粒径が2〜10μ
mの耐熱性樹脂粉末と平均粒径が2μm未満の耐熱性樹
脂粉末との混合物、(4) 平均粒径が2〜10μmの耐熱性
樹脂粉末の表面に、平均粒径が2μm以下の耐熱性樹脂
粉末及び無機粉末の少なくとも1種を付着させた疑似粒
子、(5) 平均粒子径が0.8 を超え2.0 μm未満の耐熱性
樹脂粉末と平均粒子径が0.1 〜0.8 μmの耐熱性樹脂粉
末との混合物、及び(6) 平均粒径が0.1 〜1.0 μmの耐
熱性樹脂粉末からなる群より選ばれる少なくとも1種の
粒子を用いるのが望ましい。これらの粒子は、より複雑
な粗化面を形成するからである。Further, such an adhesive for electroless plating includes:
In particular, hardened heat-resistant resin particles, inorganic particles, fibrous fillers, and the like can be included as necessary. Such heat-resistant resin particles include (1) heat-resistant resin powder having an average particle size of 10 μm or less, (2) aggregated particles obtained by aggregating heat-resistant resin powder having an average particle size of 2 μm or less, (3) average particle size. Is 2-10μ
a mixture of a heat-resistant resin powder having an average particle diameter of 2 μm or less and a mixture of a heat-resistant resin powder having an average particle diameter of 2 μm or less and (4) a heat-resistant resin powder having an average particle diameter of 2 μm or less. Pseudo particles having at least one of a resin powder and an inorganic powder adhered thereto, (5) a heat-resistant resin powder having an average particle diameter of more than 0.8 and less than 2.0 μm and a heat-resistant resin powder having an average particle diameter of 0.1 to 0.8 μm. It is preferable to use at least one kind of particles selected from the group consisting of a mixture and (6) a heat-resistant resin powder having an average particle size of 0.1 to 1.0 μm. This is because these particles form a more complicated roughened surface.
【0015】このような層間樹脂絶縁層は、レーザ光や
露光、現像処理で開口を設けることができる。次いで、
Pd触媒などの無電解めっき用の触媒を付与し、バイア
ホール用開口内をめっきしてバイアホールを設け、ま
た、絶縁樹脂層表面に導体回路を設ける。無電解めっき
膜を開口内壁、絶縁樹脂層表面全体に形成し、めっきレ
ジストを設けた後、電気めっきして、めっきレジストを
除去し、エッチングにより導体回路を形成する。An opening can be formed in such an interlayer resin insulating layer by laser light, exposure, or development. Then
A catalyst for electroless plating such as a Pd catalyst is applied, the inside of the via hole opening is plated to provide a via hole, and a conductor circuit is provided on the surface of the insulating resin layer. An electroless plating film is formed on the inner wall of the opening and on the entire surface of the insulating resin layer. After a plating resist is provided, electroplating is performed, the plating resist is removed, and a conductive circuit is formed by etching.
【0016】[0016]
【実施例】以下、実施例及び比較例に基づき、本発明を
説明する。 (第1実施例) プリント配線板の製造無電解めっき用接着剤の調製 (1) クレゾールノボラック型エポキシ樹脂(日本化薬
製:分子量2500)の25重量%アクリル化物を35重量部、
感光性モノマー(東亜合成製:商品名アロニックスM31
5)3.15重量部、消泡剤(サンノプコ製S-65)0.5 重量
部、N-メチルピロリドン(NMP )3.6 重量部を攪拌混合
した。The present invention will be described below based on examples and comparative examples. First Example Production of Printed Wiring Board Preparation of Adhesive for Electroless Plating (1) 35 parts by weight of 25% by weight acrylate of cresol novolak type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., molecular weight: 2500)
Photosensitive monomer (Toa Gosei: Aronix M31
5) 3.15 parts by weight, 0.5 parts by weight of an antifoaming agent (S-65 manufactured by San Nopco) and 3.6 parts by weight of N-methylpyrrolidone (NMP) were mixed by stirring.
【0017】(2) ポリエーテルスルフォン(PES )12重
量部、エポキシ樹脂粒子(三洋化成製:商品名ポリマー
ポール)の平均粒径1.0 μmのものを7.2 重量部、平均
粒径0.5 μmのものを3.09重量部を混合した後、更にNM
P 30重量部を添加し、ビーズミルで攪拌混合した。(2) 12 parts by weight of polyether sulfone (PES) and 7.2 parts by weight of an epoxy resin particle (manufactured by Sanyo Chemical Industries, trade name: Polymer Pole) having an average particle size of 1.0 μm and 7.2 parts by weight of an epoxy resin particle having an average particle size of 0.5 μm. After mixing 3.09 parts by weight, further NM
30 parts by weight of P was added and mixed by stirring with a bead mill.
【0018】(3) イミダゾール硬化剤(四国化成製:商
品名2E4MZ-CN)2重量部、光開始剤(チバガイギー製:
イルガキュア I-907)2重量部、光増感剤(日本化薬
製:DETX-S)0.2 重量部、NMP 1.5 重量部を攪拌混合し
た。(4) 混合物(1) 〜(3) を混合して、無電解めっき用
接着剤組成物を得た。(3) 2 parts by weight of an imidazole curing agent (manufactured by Shikoku Chemicals: 2E4MZ-CN), a photoinitiator (manufactured by Ciba-Geigy:
2 parts by weight of Irgacure I-907), 0.2 parts by weight of a photosensitizer (DETX-S, manufactured by Nippon Kayaku), and 1.5 parts by weight of NMP were stirred and mixed. (4) The mixtures (1) to (3) were mixed to obtain an adhesive composition for electroless plating.
【0019】樹脂充填剤の調整 (1) ビスフェノールF型エポキシモノマー(油化シェル
製:分子量310 、商品名 YL983U ) 100重量部と平均粒
径 1.6μmで表面にシランカップリング剤がコーティン
グされたSiO2 球状粒子〔アドマテック製:CRS 1101
−CE、ここで、最大粒子の大きさは後述する内層銅パタ
ーンの厚み(15μm)以下とする。〕 170重量部、レベ
リング剤(サンノプコ製:商品名ペレノールS4)1.5 重
量部を3本ロールにて混練し、その混合物の粘度を23±
1℃で45,000〜49,000cps に調整した。Preparation of resin filler (1) 100 parts by weight of bisphenol F type epoxy monomer (manufactured by Yuka Shell: molecular weight: 310, trade name: YL983U) and SiO having a surface coated with a silane coupling agent having an average particle size of 1.6 μm 2 spherical particles [Admatechs made: CRS 1101
-CE, where the maximum particle size is not more than the thickness (15 μm) of the inner layer copper pattern described later. 170 parts by weight, 1.5 parts by weight of a leveling agent (manufactured by San Nopco: trade name Perenol S4) are kneaded with a three-roll mill, and the viscosity of the mixture is adjusted to 23 ±
It was adjusted to 45,000 to 49,000 cps at 1 ° C.
【0020】(2) イミダゾール硬化剤(四国化成製、商
品名:2E4MZ-CN)6.5 重量部。 (3) 混合物(1) と(2) とを混合して、樹脂充填剤を調製
した。(2) Imidazole curing agent (manufactured by Shikoku Chemicals, trade name: 2E4MZ-CN) 6.5 parts by weight. (3) The mixtures (1) and (2) were mixed to prepare a resin filler.
【0021】ソルダーレジストの調整 DMDGに溶解させた60重量%のクレゾールノボラック
型エポキシ樹脂(日本化薬製)のエポキシ基50%をアク
リル化した感光性付与のオリゴマー(分子量4000)を 4
6.67g、メチルエチルケトンに溶解させた80重量%のビ
スフェノールA型エポキシ樹脂(油化シェル製、エピコ
ート1001)15.0g、イミダゾール硬化剤(四国化成製、
2E4MZ-CN)1.6 g、感光性モノマーである多価アクリル
モノマー(日本化薬製、R604 )3g、同じく多価アク
リルモノマー(共栄社化学製、DPE6A ) 1.5g、分散系
消泡剤(サンノプコ社製、S−65)0.71gを混合し、さ
らにこの混合物に対して光開始剤としてのベンゾフェノ
ン(関東化学製)を2g、光増感剤としてのミヒラーケ
トン(関東化学製)を 0.2g加えて、粘度を25℃で2.0P
a・sに調整したソルダーレジスト組成物を得た。Preparation of Solder Resist A photosensitizing oligomer (molecular weight 4000) obtained by acrylizing 50% of epoxy groups of a 60% by weight cresol novolak type epoxy resin (manufactured by Nippon Kayaku) dissolved in DMDG was added to 4 parts by weight.
6.67 g, 15.0 g of 80 wt% bisphenol A type epoxy resin (manufactured by Yuka Shell, Epicoat 1001) dissolved in methyl ethyl ketone, imidazole curing agent (manufactured by Shikoku Chemicals,
2E4MZ-CN) 1.6 g, photosensitive acrylic monomer (Nippon Kayaku, R604) 3 g, polyvalent acrylic monomer (Kyoeisha Chemical, DPE6A) 1.5 g, dispersion defoamer (Sannopco) , S-65), and 2 g of benzophenone (Kanto Chemical) as a photoinitiator and 0.2 g of Michler's ketone (Kanto Chemical) as a photosensitizer were added to the mixture. 2.0P at 25 ° C
A solder resist composition adjusted to a · s was obtained.
【0022】プリント配線板の製造 (1) 厚さ0.6mmのガラスエポキシ樹脂からなる基板
(松下電工 R5715Tg:190°C)30の両面
に12μmの銅箔32がラミネートされている銅張積層
板30Aを出発材料とした(図1(A))。これをエッ
チングして厚さを5μmに調整した(図1(B))。 Production of Printed Wiring Board (1) A copper-clad laminate in which a 12 μm copper foil 32 is laminated on both sides of a substrate (Matsushita Electric R5715Tg: 190 ° C.) 30 made of glass epoxy resin having a thickness of 0.6 mm. 30A was used as a starting material (FIG. 1 (A)). This was etched to adjust the thickness to 5 μm (FIG. 1B).
【0023】(2) この銅張積層板30Aに、炭酸ガスレ
ーザ(三菱電機 ML605GTL)を用いて、30m
J、52×10-6秒のパルス条件で15ショットの条件
でレーザを照射して、直径D:100μmの貫通孔16
を設けた(図1(C))。貫通孔16はテーパ状になっ
ていなかった。(2) The copper-clad laminate 30A is covered with a carbon dioxide laser (Mitsubishi Electric ML605GTL) for 30 m.
J, a laser was irradiated under a pulse condition of 52 × 10 -6 seconds under a condition of 15 shots, and a through hole 16 having a diameter D: 100 μm was irradiated.
(FIG. 1 (C)). The through-hole 16 was not tapered.
【0024】次に無電解めっき、電解めっきを施し(図
1(D))、更に銅箔を常法に従いパターン状にエッチ
ングすることにより、基板の両面に厚さ15μmの内層
銅パターン(下層導体回路)34及びスルーホール36
を形成した(図1(E))。Next, electroless plating and electrolytic plating are performed (FIG. 1 (D)), and a copper foil is etched in a pattern according to a conventional method to form an inner copper pattern (lower conductor) having a thickness of 15 μm on both surfaces of the substrate. Circuit) 34 and through hole 36
Was formed (FIG. 1E).
【0025】次に、内層銅パターン34の表面と、スル
ーホール36のランド36A表面と内壁とに、それぞ
れ、粗化面38を設けて、配線基板を製造した(図2
(F))。粗化面38は、前述の基板30を水洗し、乾
燥した後、エッチング液を基板の両面にスプレイで吹き
つけて、内層銅パターン34の表面とスルーホール36
のランド36a表面と内壁とをエッチングすることによ
って形成した。エッチング液には、イミダゾール銅(I
I)錯体10重量部、グリコール酸7重量部、塩化カリ
ウム5重量部、イオン交換水78重量部を混合したもの
を用いた。Next, a roughened surface 38 was provided on the surface of the inner layer copper pattern 34 and on the surface and the inner wall of the land 36A of the through hole 36, respectively, to manufacture a wiring board (FIG. 2).
(F)). After the above-described substrate 30 is washed with water and dried, the roughened surface 38 is sprayed with an etching solution on both surfaces of the substrate by spraying, so that the surface of the inner layer copper pattern 34 and the through hole 36 are formed.
By etching the surface of the land 36a and the inner wall. The etching solution is imidazole copper (I
I) A mixture of 10 parts by weight of a complex, 7 parts by weight of glycolic acid, 5 parts by weight of potassium chloride, and 78 parts by weight of ion-exchanged water was used.
【0026】(3) 次いで、樹脂層40を配線基板の内層
銅パターン34間とスルーホール36内とに設けた(図
2(G))。樹脂層40は、予め調製した上記Bの樹脂
充填剤を、ロールコータにより配線基板の両面に塗布
し、内層銅パターンの間とスルーホール内に充填し、 1
00℃で1時間、120 ℃で3時間、 150℃で1時間、 180
℃で7時間、それぞれ加熱処理することにより硬化させ
て形成した。(3) Next, a resin layer 40 was provided between the inner layer copper patterns 34 of the wiring board and in the through holes 36 (FIG. 2 (G)). The resin layer 40 is coated with the resin filler B prepared in advance on both surfaces of the wiring board by a roll coater, and filled between the inner layer copper patterns and in the through holes.
1 hour at 00 ° C, 3 hours at 120 ° C, 1 hour at 150 ° C, 180
The film was cured by heat treatment at 7 ° C. for 7 hours.
【0027】(4) (3) の処理で得た基板30の片面を、
ベルトサンダー研磨した。この研磨で、#600 のベルト
研磨紙(三共理化学製)を用い、内層銅パターン34の
粗化面38やスルーホール36のランド36a表面に樹
脂充填剤40が残らないようにした(図2(H))。次
に、このベルトサンダー研磨による傷を取り除くため
に、バフ研磨を行った。このような一連の研磨を基板の
他方の面についても同様に行った。(4) One surface of the substrate 30 obtained in the process of (3) is
The belt sander was polished. In this polishing, using # 600 belt polishing paper (manufactured by Sankyo Rikagaku Co., Ltd.), the resin filler 40 was not left on the roughened surface 38 of the inner layer copper pattern 34 or the surface of the land 36a of the through hole 36 (FIG. 2 ( H)). Next, buffing was performed to remove the scratches caused by the belt sander polishing. Such a series of polishing was similarly performed on the other surface of the substrate.
【0028】得られた配線基板30は、内層銅パターン
34間に樹脂層40が設けられ、スルーホール36内に
樹脂層40が設けられている。内層銅パターン34の粗
化面38とスルーホール36のランド36a表面の粗化
面が除去されており、基板両面が樹脂充填剤により平滑
化されている。樹脂層40は内層銅パターン34の側面
の粗化面387又はスルーホール36のランド部36a
側面の粗化面38と密着し、また、樹脂層はスルーホー
ルの内壁の粗化面と密着している。In the obtained wiring board 30, the resin layer 40 is provided between the inner copper patterns 34, and the resin layer 40 is provided in the through holes 36. The roughened surface 38 of the inner layer copper pattern 34 and the roughened surface of the land 36a of the through hole 36 are removed, and both surfaces of the substrate are smoothed by a resin filler. The resin layer 40 has a roughened surface 387 on the side surface of the inner layer copper pattern 34 or a land portion 36 a of the through hole 36.
The resin layer is in close contact with the roughened surface of the inner wall of the through hole.
【0029】(5) 更に、露出した内層銅パターン34と
スルーホール36のランド36a上面を(2) のエッチン
グ処理で粗化して、深さ3μmの粗化面42を形成した
(図2(I))。(5) Further, the exposed inner layer copper pattern 34 and the upper surface of the land 36a of the through hole 36 were roughened by the etching process (2) to form a roughened surface 42 having a depth of 3 μm (FIG. 2 (I)). )).
【0030】この粗化面42をスズ置換めっきして、0.
3 μmの厚さのSn層(図示せず)を設けた。置換めっ
きは、ホウフッ化スズ0.1 モル/L、チオ尿素1.0 モル
/L、温度50℃、pH=1.2 の条件で、粗化面をCu−S
n置換反応させた。The roughened surface 42 is plated with tin and replaced with
An Sn layer (not shown) having a thickness of 3 μm was provided. The displacement plating is performed under the conditions of tin borofluoride 0.1 mol / L, thiourea 1.0 mol / L, temperature 50 ° C., pH = 1.2, and roughened surface is Cu—S
An n-substitution reaction was performed.
【0031】(6) 得られた配線基板30の両面に、上記
無電解めっき用接着剤をロールコータを用いて塗布し
た。この接着剤は、基板を水平状態で20分間放置してか
ら、60℃で30分乾燥し、厚さ35μmの接着剤層50を形
成した(図2(J))。(6) The adhesive for electroless plating was applied to both surfaces of the obtained wiring board 30 using a roll coater. The adhesive was left standing for 20 minutes in a horizontal state, and then dried at 60 ° C. for 30 minutes to form an adhesive layer 50 having a thickness of 35 μm (FIG. 2 (J)).
【0032】(7) 得られた配線基板30の両面を超高圧
水銀灯により 500mJ/cm2 で露光し、150℃で5時間
加熱した。(7) Both surfaces of the obtained wiring substrate 30 were exposed at 500 mJ / cm 2 by an ultra-high pressure mercury lamp and heated at 150 ° C. for 5 hours.
【0033】(8) 得られた基板30をクロム酸に1分間
浸漬し、接着剤層50の表面に存在するエポキシ樹脂粒
子を溶解除去した。この処理によって、粗化面を、接着
剤層50の表面に形成した。その後、得られた基板30
を中和溶液(シプレイ社製)に浸漬してから水洗した
(図2(K))。(8) The obtained substrate 30 was immersed in chromic acid for 1 minute to dissolve and remove the epoxy resin particles present on the surface of the adhesive layer 50. By this treatment, a roughened surface was formed on the surface of the adhesive layer 50. Then, the obtained substrate 30
Was immersed in a neutralizing solution (manufactured by Shipley) and then washed with water (FIG. 2 (K)).
【0034】(9) ついで、基板30の全面に厚さ0.6
μmの無電解銅めっき44を施した(図3(L))。(9) Then, a thickness of 0.6
A μm electroless copper plating 44 was applied (FIG. 3 (L)).
【0035】(10) エッチングレジスト(図示せず)を
設けて、硫酸−過酸化水素水溶液でエッチングシて、無
電解銅めっき44のバイアホール形成部分にφ50μm
の開口44aを設けた(図3(M))。(10) An etching resist (not shown) is provided and etched with an aqueous solution of sulfuric acid and hydrogen peroxide to form a via hole in the electroless copper plating 44 with a diameter of 50 μm.
(FIG. 3 (M)).
【0036】(11)上記無電解銅めっき44をコンフォー
マルマスクとして用い、短パルス(10-4秒)のレーザ
光(三菱電機 ML605GTL )により、開口44a下の
接着剤層50を除去してバイアホール用開口48を設け
た(図3(N))。(11) Using the electroless copper plating 44 as a conformal mask, the adhesive layer 50 under the opening 44a is removed by a short pulse (10 -4 seconds) laser beam (Mitsubishi Electric ML605GTL) to remove the via. A hole opening 48 was provided (FIG. 3 (N)).
【0037】更に、配線基板30の表面に、パラジウム
触媒(アトテック製)を付与することにより、無電解め
っき膜44表面およびバイアホール用開口48の粗化面
に触媒核を付けた。Further, by applying a palladium catalyst (manufactured by Atotech) to the surface of the wiring substrate 30, catalyst nuclei were attached to the surface of the electroless plating film 44 and the roughened surface of the via hole opening 48.
【0038】(12)得られた基板30を以下の条件の無電
解銅めっき浴中に浸漬し、厚さ1.6 μmの無電解銅めっ
き膜52を基板30の全体に形成した(図3(O))。 無電解めっき液; EDTA : 150 g/L 硫酸銅 : 20 g/L HCHO : 30 mL/L NaOH : 40 g/L α、α’−ビピリジル : 80 mg/L PEG : 0.1 g/L 無電解めっき条件;70℃の液温度で30分(12) The obtained substrate 30 was immersed in an electroless copper plating bath under the following conditions to form an electroless copper plating film 52 having a thickness of 1.6 μm on the entire substrate 30 (see FIG. )). Electroless plating solution; EDTA: 150 g / L Copper sulfate: 20 g / L HCHO: 30 mL / L NaOH: 40 g / L α, α'-bipyridyl: 80 mg / L PEG: 0.1 g / L None Electroplating conditions: 30 minutes at 70 ° C liquid temperature
【0039】(13)次に、市販の感光性ドライフィルム
(図示せず)を無電解銅めっき膜52に張り付け、パタ
ーンが印刷されたマスクフィルム(図示せず)を載置し
た。この基板30を、100mJ/cm2 で露光し、その後0.
8%炭酸ナトリウムで現像処理して、厚さ15μmのめっ
きレジスト54を設けた(図3(P))。(13) Next, a commercially available photosensitive dry film (not shown) was attached to the electroless copper plating film 52, and a mask film (not shown) on which a pattern was printed was placed. The substrate 30 was exposed at 100 mJ / cm 2 , and then exposed to light at a rate of 0.1 mJ / cm 2 .
Developing treatment was performed with 8% sodium carbonate to provide a plating resist 54 having a thickness of 15 μm (FIG. 3 (P)).
【0040】(14) 次いで、得られた基板に以下の条件
で電解銅めっきを施し、厚さ15μmの電解銅めっき膜5
6を形成した(図4(Q))。 電解めっき液; 硫酸 : 180 g/L 硫酸銅 : 80 g/L 添加剤 : 1mL/L (添加剤はアトテックジャパン製:商品名カパラシドG
L) 電解めっき条件; 電流密度 : 1A/dm2 時間 : 30分 温度 : 室温(14) Next, the obtained substrate is subjected to electrolytic copper plating under the following conditions, and an electrolytic copper plating film 5 having a thickness of 15 μm is formed.
6 was formed (FIG. 4 (Q)). Electrolytic plating solution; Sulfuric acid: 180 g / L Copper sulfate: 80 g / L Additive: 1 mL / L (The additive is manufactured by Atotech Japan: trade name Capalaside G
L) Electroplating conditions; Current density: 1 A / dm 2 hours: 30 minutes Temperature: room temperature
【0041】(15)めっきレジスト54を5%KOH で剥離
除去した後、硫酸と過酸化水素混合液でエッチングし、
めっきレジスト下の無電解めっき膜52を溶解除去し、
銅箔32、無電解めっき44、無電解銅めっき膜52と
電解銅めっき膜56とからなる厚さ18μm(10μm
〜30μm)の導体回路58及びバイアホールを60を
得た(図4(R))。ここで、厚みを10μm〜30μ
mにすることで、ファインピッチと接続信頼性とを両立
させる。(15) After the plating resist 54 is peeled off with 5% KOH, it is etched with a mixed solution of sulfuric acid and hydrogen peroxide.
Dissolve and remove the electroless plating film 52 under the plating resist,
The copper foil 32, the electroless plating 44, the electroless copper plating film 52, and the electrolytic copper plating film 56 have a thickness of 18 μm (10 μm
A conductor circuit 58 and via holes 60 each having a thickness of about 30 μm were obtained (FIG. 4 (R)). Here, the thickness is 10 μm to 30 μm.
By setting m, both fine pitch and connection reliability can be achieved.
【0042】更に、70℃で80g/Lのクロム酸に3分間
浸漬して、導体回路58間の無電解めっき用接着剤層5
0の表面を1μmエッチング処理し、表面のパラジウム
触媒を除去した。Furthermore, the adhesive layer 5 for electroless plating between the conductor circuits 58 was immersed in chromic acid of 80 g / L at 70 ° C. for 3 minutes.
The surface of No. 0 was etched at 1 μm to remove the palladium catalyst on the surface.
【0043】(16)(5) と同様の処理を行い、導体回路5
8及びバイアホール60の表面にCu-Ni-P からなる粗化
面62を形成し、さらにその表面にSn置換を行った(図
4(S)参照)。(16) The same processing as in (5) is performed, and the conductor circuit 5
A roughened surface 62 made of Cu-Ni-P was formed on the surfaces of the via holes 60 and the via holes 60, and the surfaces thereof were further substituted with Sn (see FIG. 4 (S)).
【0044】(17)(6) 〜(16)の工程を繰り返すことによ
り、さらに上層の層間樹脂絶縁層160とバイアホール
160及び導体回路158を形成する。さらに、バイア
ホール160及び該導体回路158の表面に粗化層16
2を形成し、多層プリント配線板を完成する(図3
(T))。なお、この上層の導体回路を形成する工程に
おいては、Sn置換は行わなかった。(17) By repeating the steps (6) to (16), an interlayer resin insulating layer 160 as an upper layer, a via hole 160 and a conductor circuit 158 are further formed. Further, the roughened layer 16 is formed on the surface of the via hole 160 and the conductive circuit 158.
2 to complete the multilayer printed wiring board (FIG. 3
(T)). Note that, in the step of forming the upper conductive circuit, Sn substitution was not performed.
【0045】(18)そして、上述した多層プリント配線板
にはんだバンプを形成する。前記(17)で得られた基板3
0両面に、上記ソルダーレジスト組成物を45μmの厚
さで塗布する。次いで、70℃で20分間、70℃で30分間の
乾燥処理を行った後、円パターン(マスクパターン)が
描画された厚さ5mmのフォトマスクフィルム(図示せ
ず)を密着させて載置し、1000mJ/cm2 の紫外線で露光
し、DMTG現像処理する。そしてさらに、80℃で1時間、
100℃で1時間、 120℃で1時間、 150℃で3時間の条
件で加熱処理し、はんだパッド部分(バイアホールとそ
のランド部分を含む)に開口(開口径 200μm)71を
有するソルダーレジスト層(厚み20μm)70を形成す
る(図5(U))。(18) Then, solder bumps are formed on the above-mentioned multilayer printed wiring board. Substrate 3 obtained in (17) above
On both sides, the above-mentioned solder resist composition is applied in a thickness of 45 μm. Next, after performing a drying process at 70 ° C. for 20 minutes and at 70 ° C. for 30 minutes, a 5 mm-thick photomask film (not shown) on which a circular pattern (mask pattern) is drawn is placed in close contact. Exposure to ultraviolet light of 1000 mJ / cm 2 and DMTG development processing. And at 80 ° C for 1 hour,
Heat treatment under conditions of 100 ° C for 1 hour, 120 ° C for 1 hour, and 150 ° C for 3 hours, and a solder resist layer having an opening (opening diameter 200 μm) 71 in the solder pad portion (including the via hole and its land portion) (Thickness: 20 μm) 70 is formed (FIG. 5 (U)).
【0046】(19)次に、塩化ニッケル2.31×10-1mol
/l、次亜リン酸ナトリウム2.8 ×10-1mol/l、ク
エン酸ナトリウム1.85×10-1mol/l、からなるpH
=4.5の無電解ニッケルめっき液に該基板30を20
分間浸漬して、開口部71に厚さ5μmのニッケルめっ
き層72を形成した。さらに、その基板を、シアン化金
カリウム4.1 ×10-2mol/l、塩化アンモニウム1.87
×10-1mol/l、クエン酸ナトリウム1.16×10-1mo
l/l、次亜リン酸ナトリウム1.7 ×10-1mol/lか
らなる無電解金めっき液に80℃の条件で7分20秒間浸
漬して、ニッケルめっき層上に厚さ0.03μmの金めっき
層74を形成することで、バイアホール160及び導体
回路158に半田パッド75を形成する(図5
(V))。(19) Next, nickel chloride 2.31 × 10 -1 mol
/ L, sodium hypophosphite 2.8 × 10 -1 mol / l, sodium citrate 1.85 × 10 -1 mol / l, pH
= 4.5 of the substrate 30 in an electroless nickel plating solution.
By immersing for 5 minutes, a nickel plating layer 72 having a thickness of 5 μm was formed in the opening 71. Further, the substrate was treated with 4.1 × 10 -2 mol / l of potassium gold cyanide and 1.87 mol of ammonium chloride.
× 10 -1 mol / l, sodium citrate 1.16 × 10 -1 mo
1 / l, sodium hypophosphite 1.7 × 10 -1 mol / l, immersed in electroless gold plating solution at 80 ° C. for 7 minutes and 20 seconds, and gold plating 0.03 μm thick on nickel plating layer By forming the layer 74, the solder pads 75 are formed in the via holes 160 and the conductor circuits 158.
(V)).
【0047】(22)そして、ソルダーレジスト層70の開
口部71に、半田ペーストを印刷して200℃でリフロー
することにより、半田バンプ(半田体)76U、76D
を形成し、多層プリント配線板10を形成した(図6参
照)。(22) Then, a solder paste is printed in the opening 71 of the solder resist layer 70 and reflowed at 200 ° C., so that the solder bumps (solder bodies) 76U, 76D
To form a multilayer printed wiring board 10 (see FIG. 6).
【0048】比較例 コア基板の出発材料として松下電工製 R−1705
(FR−4グレード:Tg点165°C)なる両面銅張
積層板を使用して上述した第1実施例と同様に多層プリ
ント配線板を製造した。実施例の多層プリント配線板と
比較例の多層プリント配線板とに対し、HAST、ST
EAM、TS試験を実施した。Comparative Example As a starting material for the core substrate, R-1705 manufactured by Matsushita Electric Works, Ltd.
A multilayer printed wiring board was manufactured in the same manner as in the first embodiment using a double-sided copper-clad laminate having a grade of (FR-4 grade: Tg point: 165 ° C.). HAST and ST were applied to the multilayer printed wiring board of the example and the multilayer printed wiring board of the comparative example.
EAM and TS tests were performed.
【0049】ここで、HAST試験では、10個の多層
プリント配線板に対して、条件130°C、85%R
h、1.3atmで、1.8Vを印加し、この状態を1
00時間持ち、めっきスルーホール間の絶縁抵抗を測定
した。一方、STEAM試験では、10個の多層プリン
ト配線板に対して、条件121°C、100%Rh、
2.1atmの状態を336時間持ち、めっきスルーホ
ール間の絶縁抵抗を測定した。他方、TS試験では、1
0個の多層プリント配線板に対して、−55°Cでの3
分間、125°Cでの3分間の加熱・冷却を1000回
繰り返して、めっきスルーホールチェーンの抵抗変化を
測定した。なお、めっきスルーホールチェーンとは、図
1(E’)に示すように隣接するスルーホール36をコ
ア基板の表面側の導体回路34と裏面側の導体回路34
とで鎖状に電気接続したものを言う。Here, in the HAST test, the conditions were 130 ° C. and 85% R for 10 multilayer printed wiring boards.
h, at 1.3 atm, 1.8 V was applied.
After holding for 00 hours, the insulation resistance between the plated through holes was measured. On the other hand, in the STEAM test, the conditions were 121 ° C., 100% Rh, and 10 multilayer printed wiring boards.
After maintaining the state of 2.1 atm for 336 hours, the insulation resistance between the plated through holes was measured. On the other hand, in the TS test, 1
3 at -55 ° C for 0 multilayer printed wiring boards
Heating and cooling for 3 minutes at 125 ° C. for 3 minutes were repeated 1000 times, and the resistance change of the plated through-hole chain was measured. As shown in FIG. 1 (E '), a plated through-hole chain is formed by forming adjacent through-holes 36 into a conductor circuit 34 on the front side and a conductor circuit 34 on the back side of the core substrate.
And are electrically connected in a chain.
【0050】 HAST STEAM TS試験 実施例 1×108 Ω 1×108 Ω 5%抵抗変化 比較例 1×106 Ω 1×106 Ω 10%抵抗変化 この結果に示すように、比較例の多層プリント配線板で
は、絶縁性が大幅に低下している。HAST STEAM TS Test Example 1 × 10 8 Ω 1 × 10 8 Ω 5% Resistance Change Comparative Example 1 × 10 6 Ω 1 × 10 6 Ω 10% Resistance Change As shown in the results, the multilayer of the comparative example is shown. In the case of a printed wiring board, the insulating property is significantly reduced.
【0051】なお、本実施例では、基板30として松下
電工 R5715(Tg:190°C)を用いること
で、多層プリント配線板として要求される信頼性を得
た。この実施例と同様にTg点190°C以上の次のガ
ラスエポキシ基板(1)〜(4)について上記HAS
T、STEAM、TS試験を実施したところ、実施例と
同等の信頼性が得られることが判明した。この結果から
Tg:190°C以上のガラスエポキシ基板を用いるこ
とで、必要とされる信頼性が得られることが判明した。 (1)三菱瓦斯化学 HL830(Tg点217°C) (2)三菱瓦斯化学 HL830FC(Tg点212
°C) (3)日立化成工業 MCL−E−679LD(Tg点
205〜215°C) (4)日立化成工業 MCL−E−679F(Tg点2
05〜217°C)In this embodiment, the reliability required for a multilayer printed wiring board was obtained by using Matsushita Electric Works R5715 (Tg: 190 ° C.) as the substrate 30. In the same manner as in this embodiment, the following HAS was used for the following glass epoxy substrates (1) to (4) having a Tg point of 190 ° C. or more.
When T, STEAM, and TS tests were performed, it was found that reliability equivalent to that of the example was obtained. From this result, it was found that the required reliability was obtained by using a glass epoxy substrate having a Tg of 190 ° C. or higher. (1) Mitsubishi Gas Chemical HL830 (Tg point 217 ° C) (2) Mitsubishi Gas Chemical HL830FC (Tg point 212
° C) (3) Hitachi Chemical MCL-E-679LD (Tg point 205-215 ° C) (4) Hitachi Chemical MCL-E-679F (Tg point 2
05-217 ° C)
【0052】[0052]
【発明の効果】以上説明のように、本発明では、廉価な
ガラスエポキシ基板製のコア材をコア基板として用い、
めっきスルーホール間の絶縁抵抗性、ヒートサイクル特
性として十分な性能を得ることができる。As described above, in the present invention, an inexpensive core material made of a glass epoxy substrate is used as a core substrate.
Sufficient performance can be obtained as insulation resistance between plated through holes and heat cycle characteristics.
【図1】図1(A)、図1(B)、図1(C)、図1
(D)、図1(E)、図1(E’)は、本発明の第1実
施例に係る多層プリント配線板の製造工程図である。1 (A), 1 (B), 1 (C), 1
(D), FIG. 1 (E), and FIG. 1 (E ′) are manufacturing process diagrams of the multilayer printed wiring board according to the first embodiment of the present invention.
【図2】図2(F)、図2(G)、図2(H)、図2
(I)、図2(J)、図2(K)は、本発明の第1実施
例に係る多層プリント配線板の製造工程図である。2 (F), 2 (G), 2 (H), 2
(I), FIG. 2 (J), and FIG. 2 (K) are manufacturing process diagrams of the multilayer printed wiring board according to the first embodiment of the present invention.
【図3】図3(L)、図3(M)、図3(N)、図3
(O)、図3(P)は、本発明の第1実施例に係る多層
プリント配線板の製造工程図である。3 (L), 3 (M), 3 (N), 3
(O) and FIG. 3 (P) are manufacturing process diagrams of the multilayer printed wiring board according to the first embodiment of the present invention.
【図4】図4(Q)、図4(R)、図4(S)、図4
(T)は、本発明の第1実施例に係る多層プリント配線
板の製造工程図である。FIG. 4 (Q), FIG. 4 (R), FIG. 4 (S), FIG.
(T) is a manufacturing process diagram of the multilayer printed wiring board according to the first example of the present invention.
【図5】図5(U)、図5(V)は、本発明の第1実施
例に係る多層プリント配線板の断面図である。FIGS. 5 (U) and 5 (V) are cross-sectional views of the multilayer printed wiring board according to the first embodiment of the present invention.
【図6】本発明の第1実施例に係る多層プリント配線板
の断面図である。FIG. 6 is a sectional view of the multilayer printed wiring board according to the first embodiment of the present invention.
30 コア基板 34 導体回路 36 スルーホール(めっきスルーホール) 50 層間樹脂絶縁層 52 無電解めっき層 56 電解めっき層 58 導体回路 60 バイアホール 150 層間樹脂絶縁層 158 導体回路 Reference Signs List 30 core substrate 34 conductive circuit 36 through hole (plated through hole) 50 interlayer resin insulating layer 52 electroless plating layer 56 electrolytic plating layer 58 conductive circuit 60 via hole 150 interlayer resin insulating layer 158 conductive circuit
Claims (1)
基板上に層間樹脂絶縁層および導体回路が交互に積層形
成されてなり、異なる層の導体回路同士が層間樹脂絶縁
層に設けられたバイアホールで電気的に接続されてなる
ビルドアップ多層配線板において、 前記基板は、Tg点190℃以上のエポキシ樹脂を使用
したガラスエポキシ基板であることを特徴とする多層プ
リント配線板。A via hole in which interlayer resin insulation layers and conductor circuits are alternately laminated on a substrate on which a through hole and a conductor circuit are formed, and conductor circuits of different layers are provided in the interlayer resin insulation layer. A multilayer printed wiring board, wherein the substrate is a glass epoxy board using an epoxy resin having a Tg point of 190 ° C. or higher.
Priority Applications (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30324798A JP2000114727A (en) | 1998-10-09 | 1998-10-09 | Multilayer printed wiring board |
EP99933214A EP1121008B1 (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
KR1020077015079A KR100855528B1 (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
KR1020077015085A KR20070086863A (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and its manufacturing method |
EP07013524A EP1843650B1 (en) | 1998-09-03 | 1999-07-30 | Method of manufacturing a multilayered printed circuit board |
KR1020017002801A KR20010088796A (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
DE69939221T DE69939221D1 (en) | 1998-09-03 | 1999-07-30 | MULTILAYER CONDUCTOR PLATE AND METHOD FOR THE PRODUCTION THEREOF |
KR1020077015082A KR100855530B1 (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
KR1020077015083A KR20070086862A (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and its manufacturing method |
PCT/JP1999/004142 WO2000015015A1 (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
KR1020077015080A KR100855529B1 (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and method for manufacturing the same |
EP07013523A EP1843649A3 (en) | 1998-09-03 | 1999-07-30 | Multilayered printed circuit board and manufacturing method therefor |
KR1020077015087A KR20070086864A (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and its manufacturing method |
KR1020077015081A KR20070086860A (en) | 1998-09-03 | 1999-07-30 | Multilayer printed wiring board and its manufacturing method |
TW88114933A TW407453B (en) | 1998-09-03 | 1999-08-31 | Multiple layer printed circuit board and method for manufacturing the same |
MYPI20044181A MY139553A (en) | 1998-09-03 | 1999-09-02 | Method of manufacturing multilayered circuit board |
MYPI99003796A MY123228A (en) | 1998-09-03 | 1999-09-02 | Manufacturing method of a multilayered printed circuit board having an opening made by a laser, and using electroless and electrolytic plating. |
US09/797,916 US6591495B2 (en) | 1998-09-03 | 2001-03-05 | Manufacturing method of a multilayered printed circuit board having an opening made by a laser, and using electroless and electrolytic plating |
US10/356,464 US7415761B2 (en) | 1998-09-03 | 2003-02-03 | Method of manufacturing multilayered circuit board |
US11/875,486 US8148643B2 (en) | 1998-09-03 | 2007-10-19 | Multilayered printed circuit board and manufacturing method thereof |
US12/098,582 US7832098B2 (en) | 1998-09-03 | 2008-04-07 | Method of manufacturing a multilayered printed circuit board |
US13/357,663 US20120125680A1 (en) | 1998-09-03 | 2012-01-25 | Multilayered printed circuit board and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30324798A JP2000114727A (en) | 1998-10-09 | 1998-10-09 | Multilayer printed wiring board |
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Publication Number | Publication Date |
---|---|
JP2000114727A true JP2000114727A (en) | 2000-04-21 |
Family
ID=17918658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30324798A Pending JP2000114727A (en) | 1998-09-03 | 1998-10-09 | Multilayer printed wiring board |
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Cited By (10)
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DE112007001047T5 (en) | 2006-04-28 | 2009-04-16 | Hitachi Chemical Co., Ltd. | Resin composition, prepreg, laminate and circuit board |
WO2010110433A1 (en) | 2009-03-27 | 2010-09-30 | 日立化成工業株式会社 | Thermosetting resin composition, and prepreg, insulating film with support, laminate plate, and printed wiring board, each obtained using same |
WO2011104905A1 (en) | 2010-02-24 | 2011-09-01 | 日立化成工業株式会社 | Varnish, prepreg, film with resin, metal foil-clad laminate, and printed circuit board |
WO2012099131A1 (en) | 2011-01-18 | 2012-07-26 | 日立化成工業株式会社 | Prepreg, and laminate board and printed wiring board using same |
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-
1998
- 1998-10-09 JP JP30324798A patent/JP2000114727A/en active Pending
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