JP2000082671A5 - - Google Patents
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- Publication number
- JP2000082671A5 JP2000082671A5 JP1998248709A JP24870998A JP2000082671A5 JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5 JP 1998248709 A JP1998248709 A JP 1998248709A JP 24870998 A JP24870998 A JP 24870998A JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- manufacturing
- semiconductor device
- range
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10248709A JP2000082671A (ja) | 1998-06-26 | 1998-09-02 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18080198 | 1998-06-26 | ||
| JP10-180801 | 1998-06-26 | ||
| JP10248709A JP2000082671A (ja) | 1998-06-26 | 1998-09-02 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000082671A JP2000082671A (ja) | 2000-03-21 |
| JP2000082671A5 true JP2000082671A5 (fr) | 2005-10-13 |
Family
ID=26500194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10248709A Pending JP2000082671A (ja) | 1998-06-26 | 1998-09-02 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000082671A (fr) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
| JP4154558B2 (ja) | 2000-09-01 | 2008-09-24 | 日本電気株式会社 | 半導体装置 |
| JP4804635B2 (ja) * | 2001-03-06 | 2011-11-02 | 古河電気工業株式会社 | ＧａＮ系電界効果トランジスタ |
| JP2002289528A (ja) * | 2001-03-23 | 2002-10-04 | Yasuhiko Arakawa | 窒化ガリウム系化合物半導体の結晶成長法、および窒化ガリウム系化合物半導体を備えた電子デバイス |
| WO2003063215A1 (fr) | 2002-01-21 | 2003-07-31 | Matsushita Electric Industrial Co., Ltd. | Procede de fabrication d'un dispositif a semi-conducteurs a base de nitrures |
| JP2004327882A (ja) * | 2003-04-28 | 2004-11-18 | Ngk Insulators Ltd | エピタキシャル基板、半導体素子および高電子移動度トランジスタ |
| WO2005024909A2 (fr) | 2003-09-09 | 2005-03-17 | The Regents Of The University Of California | Fabrication de plaques multiples ou uniques a effet de champ grille |
| US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
| US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
| US9773877B2 (en) | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
| JP4548117B2 (ja) * | 2004-12-28 | 2010-09-22 | ソニー株式会社 | 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法 |
| US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
| JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法 |
| US7405430B2 (en) * | 2005-06-10 | 2008-07-29 | Cree, Inc. | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
| KR100809209B1 (ko) * | 2006-04-25 | 2008-02-29 | 삼성전기주식회사 | 비극성 ｍ면 질화물 반도체 제조방법 |
| JP5105160B2 (ja) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
| JP5944301B2 (ja) * | 2012-11-19 | 2016-07-05 | 株式会社東芝 | 半導体発光素子の製造方法 |
| US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
| US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
| US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
-
1998
- 1998-09-02 JP JP10248709A patent/JP2000082671A/ja active Pending
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