JP2000077777A - Semiconductor laser device, method of manufacturing the same, and semiconductor laser device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To reduce threshold voltage and operating current. A first conductivity type semiconductor substrate, a first conductivity type lower cladding layer formed on one surface of the semiconductor substrate,
An active layer formed on the clad layer, an upper clad layer formed on the active layer and partially having a stripe-shaped ridge, and formed and arranged on the upper clad layer so as to sandwich the ridge And a second layer covering the ridge and the block layer.
A conductive cap layer, a first electrode formed on the cap layer, and a second electrode formed on the back surface of the semiconductor substrate.
A ridge-type semiconductor laser device having a semiconductor laser composed of the electrodes described above, wherein an active layer portion deviating from the ridge is a disordered layer due to diffusion of impurities. The active layer has a multiple quantum well structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device, a method for manufacturing the same, and a semiconductor laser device.

[0002]

2. Description of the Related Art Semiconductor lasers are widely used as light sources for optical communications and information equipment.

As one of the semiconductor lasers, a ridge structure semiconductor laser (semiconductor laser device) is known. This ridge type semiconductor laser device is described in, for example, "Electronic Materials", June 1996, P28-P32, issued by the Industrial Research Council. This document describes a red semiconductor laser diode for DVD.

There is also a semiconductor laser (multi-beam laser) that emits a plurality of laser beams from a single semiconductor laser device. Regarding the multi-beam laser, see, for example, "Electronic Materials", June 1987, p.
It is described in P111. The document states that monolithic type 3
A beam semiconductor laser device (semiconductor laser array device) is disclosed. This document describes a visible light semiconductor laser as a signal reading light source used for a document file system, such as a CD, a VD device, a laser printer, a POS, a barcode reader, and the like.

On the other hand, Japanese Patent Publication No. 63-51557 discloses a technique in which a waveguide of a laser resonator is formed by a disordered region by impurity diffusion. This document describes examples of a light emitting element and a field effect transistor. In the example of a light-emitting device, the disordered region is used as a waveguide through which light passes. In the example of the field-effect transistor, the disordered region is used as an electrical separator.

[0006]

The ridge-type semiconductor laser device has a structure in which a pair of block layers sandwiches a ridge formed in a cladding layer to perform current confinement. FIG.
3 is a ridge type semiconductor laser device (semiconductor laser chip)
1 is an example. As shown in FIG. 23, the first conductive type clad layer (lower clad layer) 3, the active layer 4, and the first conductive type compound semiconductor are formed on one surface (upper surface) side of the semiconductor substrate 2 made of the first conductive type compound semiconductor.
The structure is such that a second conductive type clad layer (upper clad layer) 5 is sequentially laminated.

[0007] A stripe-shaped ridge 6 is provided on the second conductive type cladding layer 5. The ridge 6 is formed by partially etching the surface of the cladding layer 5 of the second conductivity type over a predetermined thickness.

[0008] Both sides of the ridge 6 are buried with a block layer 7 of the first conductivity type. The ridge 6
The block layer 7 is covered with a cap layer 8 of the first conductivity type. Then, on the cap layer 8 and on the other surface (back surface) side of the semiconductor substrate 2, electrodes 9 and 10 formed of an anode electrode or a cathode electrode are formed.

In such a semiconductor laser, the electrode 9
And applying a predetermined voltage to the electrode 10,
A laser beam is emitted from the end of the active layer 4 corresponding to the ridge 6.

In the ridge type semiconductor laser device, as described above, the cladding layer 5 on the active layer 4 is used to stabilize the current to the light emitting portion and stabilize the horizontal mode in the active layer horizontal direction.
Is formed in a stripe shape to form a ridge 6.
The thickness of the cladding layers 5 on both sides deviating from the thickness is reduced to about 0.2 μm, and the ridge 6 is sandwiched between the block layers 7 provided on both sides thereof.

FIG. 24 shows N-type GaAs as a semiconductor substrate.
It is a cross-sectional view showing a semiconductor laser chip using a substrate,
FIG. 25 is a sectional view showing a semiconductor laser chip using a P-type GaAs substrate. In these figures, the reference numerals indicating the respective parts are the same as those in FIG. 23. However, in the case of a semiconductor laser chip using an N-type GaAs substrate, N is added to the end of the reference numeral, and a semiconductor laser using a P-type GaAs substrate. In the case of a chip, P is added after the code.

In FIG. 24, a circle mark on the ridge 6 is indicated by a plus sign (+) in a circle mark.
25, the minus sign (-) is shown in a circle to indicate the electron 12. For clarity, hatching is omitted except for the electrode portions.

A semiconductor laser chip 1 having such a structure
In N and 1P, as shown in FIG.
N restricts the flow area of the holes 11 or
As shown in FIG. 5, electrons 12 are formed by the P-type block layer 7P.
Constricts the flow area.

Electrons have a higher mobility than holes and are easily spread, so that the current is spread. As a result, the reactive current increases,
Efficiency is reduced threshold I _th is increased. in this way,
Since electrons have a higher mobility than holes, a semiconductor laser chip using an N-type substrate is often used as a semiconductor substrate.

In manufacturing such a semiconductor laser device, MOCVD (Metalorganic Chemical Vapor Deposi
When a crystal is grown using the method, the active layer thickness becomes non-uniform if the surface on which the active layer is grown is not flat, and the far-field image of the laser is disturbed. In the case where an active layer having a multiple quantum well structure (MQW) is employed, further problems such as variations in the thickness of each layer constituting the active layer and an increase in operating current occur.

On the other hand, it is known that a multi-beam system can be used for high-speed applications such as a magneto-optical disk and a laser beam printer. Further, in the conventional semiconductor laser device, a cathode electrode or an anode electrode is provided on one surface side of the substrate,
An anode electrode or a cathode electrode is provided on the other surface side. In view of this, the present inventor has studied the individual driving of the negative side (N side) of the monolithic multi-beam laser diode in order to increase the degree of freedom of the configuration of the driving circuit, and made the present invention.

An object of the present invention is to provide a semiconductor laser capable of achieving lower threshold, lower operating current and higher efficiency.

Another object of the present invention is to provide a high-speed multi-beam laser capable of achieving lower threshold, lower operating current and higher efficiency.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0020]

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) A semiconductor substrate of the first conductivity type, a lower cladding layer of the first conductivity type formed on one surface of the semiconductor substrate, an active layer formed on the cladding layer, and An upper cladding layer partially formed with a stripe-shaped ridge, a pair of second conductivity type block layers formed on the upper cladding layer and arranged so as to sandwich the ridge, A ridge having a semiconductor laser including a second conductivity type cap layer covering the block layer, a first electrode formed on the cap layer, and a second electrode formed on the back surface of the semiconductor substrate In the semiconductor laser device, an active layer portion deviating from the ridge is a disordered layer due to diffusion of impurities. The block layer and the cap layer above the disordering layer do not contain the disordering impurities. The active layer has a multiple quantum well structure.

Such a semiconductor laser device can be manufactured by the following method.

A step of sequentially epitaxially growing a lower conductive layer of the first conductive type, an active layer, and an upper clad layer of the second conductive type on one surface of the semiconductor substrate of the first conductive type; Forming a stripe-shaped mask and etching the upper cladding layer to an intermediate depth using the mask as an etching mask to form a stripe-shaped ridge; and performing epitaxial growth with the mask remaining, and thinning by the etching. Forming a block layer of a second conductivity type layer on the resulting upper cladding layer; and forming a second conductivity type cap layer on the ridge and on the block layer after removing the mask. Forming a first electrode on the cap layer and forming a second electrode on the other surface of the semiconductor substrate. A method for manufacturing a semiconductor laser device for forming a laser, comprising: depositing a diffusion source layer containing an impurity to be diffused in a state where the mask remains during the ridge formation after the ridge formation on the upper cladding layer; Thereafter, thermal diffusion is performed to diffuse the impurities in the diffusion source layer to the active layer portion deviating from the ridge to form a disordered layer, and then the block layer is formed. A multiple quantum well is formed as an active layer. Further, the block layer and the ridge located on the side surface of the ridge may be covered with a cap layer of a second conductivity type, and the second electrode may be provided on the cap layer.

The semiconductor laser device can also be manufactured by the following method.

In the manufacturing method, after the ridge is formed, an impurity is implanted into the upper cladding layer while the mask at the time of forming the ridge is left, and then the impurity is annealed to diffuse the impurity into an active layer portion deviating from the ridge. Then, a disordered layer is formed, and then the block layer is formed.

(2) a semiconductor substrate of the first conductivity type, a lower cladding layer of the first conductivity type formed on one surface of the semiconductor substrate, an active layer formed on the lower cladding layer, and the active layer A second conductivity type upper cladding layer having a stripe-shaped ridge formed on a part thereof, a second conductivity type cap layer formed on the ridge of the upper cladding layer, and at least on the cap layer A semiconductor laser device having a semiconductor laser comprising a first electrode to be formed and a second electrode to be formed on a back surface of the semiconductor substrate, wherein an active layer portion deviating from the ridge is disordered due to diffusion of impurities. A semiconductor laser device comprising a layer.

The semiconductor laser device is manufactured by the following method.

A step of sequentially epitaxially growing a lower conductive layer of the first conductive type, an active layer, an upper clad layer of the second conductive type, and a cap layer of the second conductive type on one surface of the semiconductor substrate of the first conductive type; Forming a stripe-shaped mask on a part of the cap layer, etching the mask to an intermediate depth of the upper clad layer using the mask as an etching mask to form a stripe-shaped ridge, and removing impurities using the mask. Forming a disordered layer by diffusing into an active layer portion deviating from the ridge; forming a first electrode on the cap layer and the upper cladding layer after removing the mask; Forming a second electrode to form a semiconductor laser.

(3) In the structure of the means (2), the cap layer is formed on the entire upper clad layer including the ridge.

The semiconductor laser device is manufactured by the following method.

On one surface of the semiconductor substrate of the first conductivity type, a lower cladding layer of the first conductivity type, an active layer, an upper cladding layer of the second conductivity type and, if necessary, a cap layer of the second conductivity type are successively epitaxially grown. Forming a stripe-shaped mask on a part of the cap layer or the upper cladding layer and etching the mask to an intermediate depth in the upper cladding layer using the mask as an etching mask to form a stripe-shaped ridge. Forming a disordered layer by diffusing impurities into the active layer portion deviating from the ridge using the mask, and forming a second conductive type cap layer on the entire surface of the semiconductor substrate after removing the mask. Forming, forming a first electrode on the cap layer, and forming a second electrode on the back surface of the semiconductor substrate to form a semiconductor laser. And a step of.

(4) In the configuration of the means (2), a cap layer is provided on the ridge and the block layer is provided on side surfaces of the ridge and the cap layer, and the block layer and the cap layer are provided. Among them, the first electrode is provided on at least the cap layer.

The semiconductor laser device is manufactured by the following method.

A step of sequentially epitaxially growing a lower conductive layer of the first conductive type, an active layer, an upper clad layer of the second conductive type, and a cap layer of the second conductive type on one surface of the semiconductor substrate of the first conductive type; Forming a stripe-shaped mask on a part of the cap layer, etching the mask to an intermediate depth of the upper clad layer using the mask as an etching mask to form a stripe-shaped ridge, and removing impurities using the mask. Forming a disordered layer by diffusing the active layer portion off the ridge, and forming a first conductivity type block layer on the upper cladding layer on both sides of the cap layer after removing the mask; Forming a first electrode on the cap layer and the block layer; and forming a second electrode on a back surface of the semiconductor substrate to form a semiconductor laser. And a step of.

(5) In the configuration of the means (1) to (4), one or a plurality of electrical insulating means is provided on one surface side of the semiconductor substrate to reach a surface layer portion of the semiconductor substrate. The semiconductor laser is formed in each semiconductor substrate region partitioned by the optical insulating means. The semiconductor substrate is a P-type semiconductor.

Such a semiconductor laser device can be manufactured by forming a plurality of monolithically on the semiconductor substrate so that the semiconductor lasers can be driven independently in the manufacturing method of the means (1).

(6) A package comprising a package body and a lid having a light transmission window for transmitting laser light, a multi-beam type semiconductor laser device fixed to the package body and emitting a plurality of laser lights, A semiconductor laser device having a plurality of external electrode terminals attached to a package body and extending inside and outside of the package, and connecting means for connecting each electrode of the multi-beam type semiconductor laser element to the external electrode terminal. The multi-beam type semiconductor laser device is a semiconductor laser device having the structure of the means (5).

According to the means (1), in the semiconductor laser (a), the active layer below the ridge of the second conductivity type is not only current-constricted by the block layer of the first conductivity type, but also
Since the active layer portion deviating from the ridge is a disordered layer, the light emitting portion (active layer portion corresponding to the ridge) and the active layer portion deviating from the light emitting portion (the active layer portion corresponding to the upper cladding layer portion deviating from the ridge). ), The band gap difference (band gap difference in the lateral direction) becomes large, the narrowing of carriers (electrons or holes) is assured, the threshold value and efficiency of the laser diode can be reduced, and the operating current can be reduced. Reduction can be achieved.

(B) The disordering causes a refractive index difference between the light emitting portion and the disordered layer, resulting in an actual waveguide structure.
Further lowering of threshold voltage and higher efficiency can be achieved, and reduction of operating current can be achieved.

In the means (2), no block layer is provided. However, since the active layer portion deviating from the ridge is a disordered layer, the current confinement of the light emitting portion is accurately performed by the pair of disordered layers. Since the laser diode can be reliably performed, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced. In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

In the means (3), the entire upper clad layer including the upper surface of the ridge is covered with the cap layer, and the block layer is not provided. However, the active layer portion outside the ridge becomes a disordered layer. Therefore, the current constriction of the light emitting portion can be accurately and reliably performed by the pair of disordered layers, so that the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced. In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

The means (4) has a structure in which the first electrode is formed over the cap layer on the ridge and the block layer on the side surface of the ridge in the structure of the means (1). In this structure, similarly to the configuration of the means (1), since the active layer portion deviating from the ridge is a disordered layer, the current constriction of the light emitting portion can be accurately and reliably performed by the pair of disordered layers. Therefore, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced. In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

According to the means (5), in addition to the effect obtained by the structure of the means (1), an increase in light output can be achieved because the semiconductor laser element is of a multi-beam type. Further, since the semiconductor substrate is a P-type semiconductor, the carriers that are confined to electrons are electrons, so that there is a benefit that individual semiconductor lasers (laser diodes) can be individually controlled at high speed by current control applied to the cathode electrode. .

According to the means (6), the semiconductor laser device incorporating the semiconductor laser device according to the structure of the means (5) has a low threshold value, a low operating current, and a high speed capable of achieving high efficiency. A multi-beam type semiconductor laser device is obtained.

[0045]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) FIG. 1 is a schematic sectional view of a ridge type semiconductor laser device according to an embodiment (Embodiment 1) of the present invention. In the figure, hatching is omitted for parts other than the electrodes. In the first embodiment, an example will be described in which a flow region of electrons is narrowed by a conventional block layer and a disordered layer according to the present invention using a P-type semiconductor substrate.

As shown in FIG. 1, the semiconductor laser device 1 is a P-type (first conductivity type) compound semiconductor such as Ga.
On one surface (upper surface) side of the semiconductor substrate 2 made of As, a P-type G
a AlAs cladding layer (lower cladding layer) 3, active layer 4, N-type (second conductivity type) compound semiconductor (GaAl
The cladding layer (upper cladding layer) 5 made of As) is sequentially laminated. The active layer 4 has an undoped multiple quantum well structure (MQW).

The upper cladding layer 5 is provided with a stripe-shaped ridge 6. The stripe extends in a direction perpendicular to the plane of the paper. The ridge 6 is formed by partially etching the surface of the upper cladding layer 5 over a predetermined thickness. The upper cladding layer 5 is thick at the ridge 6 and thin at both sides thereof.

This is one of the features of the present invention. In the active layer portion deviating from the ridge 6, impurities (Zn) are diffused as indicated by dots to form the disordered layer 15. ing. As described later, the diffusion of Zn is performed by the upper cladding layer 5 above and below the active layer 4 by the diffusion method.
And is diffused over the surface portion of the cladding layer 3. It is also characterized in that a single crystal block layer 7 is epitaxially grown on the upper clad layer 5 in which Zn is diffused. The presence of the single crystal block layer 7 on the upper clad layer 5 in which Zn is diffused,
The GaAs block layer stabilizes light confinement in the horizontal direction, facilitates obtaining a unimodal light distribution in the horizontal direction, and improves current-light output linearity.

Further, both sides of the ridge 6 are P-type GaAl
It is embedded with a block layer 7 of As or P-type GaAs. Further, the ridge 6 and the block layer 7 are of N-type G type.
It is covered with a cap layer 8 of aAs. An anode electrode (electrode 10) or a cathode electrode (electrode 9) is formed on the cap layer 8 and the other surface (back surface) of the semiconductor substrate 2.

In such a semiconductor laser device 1, by applying a predetermined voltage to the electrodes 9 and 10, laser light is emitted from the end of the active layer 4 corresponding to the ridge 6. At this time, current confinement is performed by the pair of block layers 7 and the pair of disordered layers 15.

FIG. 2 is a diagram showing a band gap diagram and a state of confining electrons in a structure having a disordered layer 15 (right side diagram) and a conventional structure having no disordered layer (left side diagram). That is, the pair of disordered layers 15 causes the active layer portion corresponding to the ridge to have a band gap difference (in the direction along the active layer) at the interface between the light emitting portion and the active layer portion corresponding to the upper cladding layer portion deviating from the ridge 6. (The difference in band gap in the horizontal direction) is increased, so that the spread of the carriers (electrons 12) can be prevented, and the narrowing can be ensured. As a result, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced.

Also, the disordering causes a difference in the refractive index between the light emitting portion and the disordered layer, resulting in an actual waveguide structure.
As a result, the threshold value and the efficiency can be further reduced and the operating current can be reduced.

Next, a specific example (embodiment) will be described.

(Embodiment 1) FIGS. 3 to 12 are schematic sectional views showing a ridge type semiconductor laser device according to an embodiment (Embodiment 1) of the present invention and respective manufacturing steps. In addition,
Also in these figures, hatching of each part is omitted for clarification of the figures.

The semiconductor laser device 1 according to the first embodiment has a buffer layer 13 made of P-type GaAs on one surface (upper surface) of the semiconductor substrate 2 made of P-type GaAs. It has a lower cladding layer 3 of GaAlAs, an active layer 4, an upper cladding layer 5 of N-type GaAlAs, and an N-type GaAs layer 14. The ridge 6 is formed from the surface layer of the lower clad layer 3 to the active layer 4, the upper clad layer 5, and the N-type GaAs layer 14. On both sides of the ridge 6, a block layer 7 made of P-type GaAlAs is formed.
Is provided.

The active layer portion deviating from the ridge 6 is
As indicated by dots, the disordered layer 15 is formed by diffusion of impurities.

On the N-type GaAs layer 14 and the block layer 7, a cap layer 8 made of N-type GaAs is provided. In addition, the mesa etching is performed over the surface layer portion of the semiconductor substrate 2, and the surface of the mesa portion is partially covered with the insulating film 23. Cap layer 8
An electrode 9 (cathode electrode) is provided on the
The electrode 10 (anode electrode) is provided on the other surface (back surface).

Next, a method for manufacturing such a semiconductor laser device 1 will be described.

In manufacturing a semiconductor laser device, first, a semiconductor substrate is prepared. In actual production, a semiconductor substrate called a large-sized wafer is prepared, and a semiconductor laser device composed of small pieces is manufactured by dividing the wafer vertically and horizontally at the final stage of device formation, but for convenience of explanation, A description will be given below of a state in which a single semiconductor laser element is manufactured.

The semiconductor substrate 2 is composed of a P conductivity type (first conductivity type) GaAs substrate having a thickness of several hundred μm. The semiconductor substrate 2 consisting of the P-type GaAs is a Zn as impurity, the impurity concentration is in the 1.0 × 10 ¹⁹ cm ~ about ^3.

Next, as shown in FIG.
Semiconductor layers are sequentially formed on one side (upper side) of the
rganic Chemical Vapor Deposition method or MBE (Mole
(Molecular Beam Epitaxy) to form multiple semiconductor layers. In the first embodiment, it is formed by the MOCVD method. In forming a semiconductor layer, as shown in FIG.
Buffer layer 13 of P type, cladding layer (lower cladding layer) of P-type GaAlAs 3, non-doped GaAlA
An active layer 4 made of s, a clad layer (upper clad layer) made of N-type GaAlAs, and an N-type GaAs layer 14 are sequentially laminated.

Here, as an example of the thickness and impurity concentration of each part, the P-type GaAs buffer layer 2a has a thickness of 0.5 μm and an impurity concentration of 1.0 × 10 ¹⁸ cm ³ (impurity Z).
n), the P-type GaAlAs cladding layer 3 is P-type Ga _0.5 A
l _0.5 As, a thickness of 1.5 μm, and an impurity concentration of 1.0 × 10 ¹⁸ cm ³ (impurity Zn).

The active layer 4 has an undoped multiple quantum well structure (MQW) composed of seven layers, and a pair of Ga _0.65 Al
Ga _0.90 Al between a _0.35 As guide layer (10 nm)
_0.10 As well layer (8 nm) and Ga _0.70 Al _0.3 As
The barrier layers (5 nm) are alternately arranged, three well layers and two barrier layers.

The upper cladding layer 5 is made of N-type Ga _0.5 Al _0.5
An As layer having a thickness of 1.4 μm and an impurity concentration of 1.0
× 10 ¹⁸ cm ~ ³ (impurity Se). Also, N-type Ga
The As layer 14 has a thickness of 0.2 μm and an impurity concentration of 1.0 ×
10 ¹⁸ cm ³ (impurity Se).

Next, as shown in FIG.
The surface of the layer 14 is deposited on the surface of the
While forming a PSG film of μm, a stripe-shaped mask 20 is formed by a usual photo etching technique,
Thereafter, etching is performed using the mask 20 as a mask so that the thickness of the lower cladding layer 3 under the active layer 4 remains about 0.2 to 0.3 μm. The mask 20 has a width of 7 μm
And the width of the foot part is 5 by this etching.
A ridge 6 having a thickness of about μm is formed.

Next, as shown in FIG. 6, for example, 175 μm
An ZnO film 21 having a thickness of m is formed. This ZnO film 21
In the upper clad layer 5 which is separated from the ridge 6, the ZnO film 21 is directly placed on the upper clad layer 5 and the diffusion source layer 2
It becomes 2.

Next, the ZnO film 21 is diffused by heat.
Is diffused into the active layer 4. The thermal diffusion is performed in an open tube at a temperature of, for example, 650 to 850 ° C. for about 1 hour. As a result, as shown in FIG.
Lower cladding layer 5, active layer 4, lower cladding layer 3,
Zn is diffused into the buffer layer 13 and the surface portion of the semiconductor substrate 2. Since the active layer 4 becomes an MQW layer, it is disordered by the diffusion of Zn, and a disordered layer 15 is formed on the active layer 4. The black area is the disordered layer 15.

Next, as shown in FIG. 8, the ZnO film 21 is removed by etching. The etching is performed by, for example, an etchant using HCl and H ₂ O.

Next, as shown in FIG. 9, a buried epitaxial growth is performed to form a block layer 7 made of P-type GaAlAs or P-type GaAs on the recessed upper cladding layer 5 to fill the recess. The impurity concentration of the block layer 7 is, for example, 1.0 × 10 ¹⁸ cm ³ (impurity Zn).

Next, after the mask 20 is removed, as shown in FIG. 10, a cap layer 8 is formed on the entire surface of the semiconductor substrate 2 by epitaxial growth. The cap layer 8 is made of N-type GaAs, has a thickness of 0.5 μm, and has an impurity concentration of 2.0 × 10 ¹⁸ cm ³ (impurity Se).

Next, as shown in FIG. 11, one side of the semiconductor substrate 2 is subjected to mesa etching to reach the surface layer depth of the buffer layer 13 and a part of the surface is formed of an insulating film (SiO ₂ film) 23. And an electrode 9 is formed on the cap layer 8. This electrode 9 becomes a cathode electrode.

Next, as shown in FIG. 12, an electrode 10 is formed on the other surface (back surface) of the semiconductor substrate 2. This electrode 10
Becomes the anode electrode.

Next, the semiconductor laser device 1 as shown in FIG. 3 can be manufactured by dividing the semiconductor substrate 2 vertically and horizontally.

According to the first embodiment, the following effects can be obtained.

(1) In the semiconductor laser device 1, the active layer 4 below the ridge 6 made of N-type GaAlAs is formed of P-type GaAlAs.
Not only is the current confined by the block layer 7 made of AlAs or P-type GaAs, but also the active layer portion deviating from the ridge 6 is the disordered layer 15, so that the light-emitting portion (active layer portion corresponding to the ridge) and At the interface with the active layer portion deviating from the light emitting portion (the active layer portion corresponding to the upper cladding layer portion deviating from the ridge), the band gap difference (band gap difference in the lateral direction) increases, and the narrowing of carriers (electrons) is ensured As a result, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced.

(2) The disordering causes a difference in the refractive index between the light emitting portion and the disordered layer, resulting in an actual waveguide structure.
Further lowering of threshold voltage and higher efficiency can be achieved, and reduction of operating current can be achieved.

(3) The disordered layer 15 can be reliably formed by forming the ZnO film 21 serving as the diffusion source layer 22 and performing the subsequent thermal diffusion process.

(4) Since the block layer 7 is formed by epitaxial growth after the formation of the disordered layer 15, the block layer 7 has good crystallinity and is a layer that reliably performs current confinement. That is, no leakage current occurs from the block layer 7, and the semiconductor laser has stable characteristics.

(Embodiment 2) FIG. 13 shows a method of manufacturing a semiconductor laser device according to another embodiment (Embodiment 2) of the present invention.
FIG. 14 is a cross-sectional view of a semiconductor substrate showing a state in which an impurity is implanted into an upper cladding layer portion which is separated from the ridge after the ridge is formed. FIG. It is sectional drawing.

Embodiment 2 shows an example of a method for forming another disordered layer 15. In the second embodiment, after the ridge 6 is formed in the first embodiment (see FIG. 5), as shown in FIG. 13, Si is ion-implanted into the active layer 4 using the mask 20 as a mask (acceleration voltage 50 keV, dose amount). 1.0 × 10 ¹⁴ c
m ~ ² ) to form an impurity-implanted layer 25 (a thin black portion), and then, as shown in FIG.
C. for 1 hour) to form a lower cladding layer 3 under the active layer 4.
Is diffused up to the surface layer portion of the active layer 4 and the active layer 4 is disordered similarly to the first embodiment to form the disordered layer 15. The subsequent steps are the same as in the first embodiment.

Also in the second embodiment, a semiconductor laser device 1 having a high current confinement effect can be manufactured as in the first embodiment.

The disordered layer 15 can be accurately and reliably formed by a relatively simple method of impurity ion implantation and annealing according to the second embodiment.

(Embodiment 2) FIG. 15 is a perspective view showing a semiconductor laser device according to another embodiment (Embodiment 2) of the present invention. The semiconductor laser device 1a of the second embodiment is a multi-beam semiconductor laser device having two semiconductor lasers (semiconductor laser units: LDs) 30 having the structure shown in the semiconductor laser device 1 of the first embodiment in parallel. . The semiconductor laser section 30 is electrically isolated by a mesa etching groove 31 that reaches one surface side of the semiconductor substrate 2 to the surface layer portion depth of the semiconductor substrate 2. The electrical isolation, that is, the electrically insulating means, may be other means generally employed.

In this semiconductor laser device 1 a, laser light is emitted from each end of the active layer 4 whose current is confined by the pair of disordered layers 15 in each of the semiconductor laser sections 30. In this semiconductor laser device 1a, the semiconductor substrate 2 is made of a P-type GaAs plate,
0 is an electrode 10 (anode electrode) on the back surface of the semiconductor substrate 2
A laser beam is emitted by controlling the application of a voltage between the electrode and the electrode 9 (cathode electrode) on the cap layer 8 made of N-type GaAs. Since the electrode 10 is a common electrode, high-speed operation can be achieved by individually driving the negative side (N side). This is convenient when used as a light source for optical disk devices, magneto-optical disk devices, laser beam printers, and the like.

Such a multi-beam type semiconductor laser device 1a is incorporated in a sealed container and used as a semiconductor laser device.

(Embodiment 3) FIG. 16 shows a semiconductor laser device 60 incorporating the multi-beam type semiconductor laser device 1a. The semiconductor laser device 60 has a package main body 61 which is a main component of the assembly, and a lid 62 attached to the surface side of the package main body 61. The package is formed by a package body 61 and a lid 62.

The package main body 61 is formed of a circular metal plate having a thickness of several mm, and a heat sink 63 made of copper is fixed to a portion deviated from the center of the surface with a brazing material or the like. A submount 64 made of silicon carbide (SiC) is fixed to a tip end of a side surface (front surface) of the heat sink 63 facing the center of the package body 61. The submount 64 includes a semiconductor laser device 1a.
As shown in FIG. 17, two wirings 65 are provided on one mounting surface. One end of each of the wirings 65 is a connecting portion overlapping with the electrode 9 of each semiconductor laser unit 30 of the semiconductor laser device 1a. A solder layer 66 made of PbSn is formed at this connection portion.

As shown in FIG. 18, the semiconductor laser device 1a is mounted on the submount 64 so that the electrode 9 is on the lower surface.
It is positioned above and fixed by reflow of the solder layer 66. The electrodes are fixed to the submount 64 with the electrodes on the fixed side. A submount 64 to which the semiconductor laser element 1a is fixed is fixed to the heat sink 63.

FIG. 17 is a perspective view of the submount 64, and FIG. 18 is a view showing the submount 64 to which the semiconductor laser device 1a is fixed. As can be seen from these figures, the other end of the wiring 65 serves as a lead-out portion extending away from the semiconductor laser element 1a, and serves as a wire bonding portion 67 for connecting a wire.

A metallized layer 68 is formed on the other surface of the submount 64, that is, on the fixed surface fixed to the heat sink 63. The wiring 65 and the metallization layer 68 have, for example, a three-layer structure of Ti / Pt / Au.

On the other hand, at the center of the package body 61, a light receiving element (PD) 70 for receiving a laser beam emitted from the rear end of the semiconductor laser element 1a is fixed.

Further, four external electrode terminals (leads) 71 are fixed to the package body 61. The three leads 71 are fixed to the package main body 61 through the insulator 72 in a penetrating state. The remaining one lead 71 is fixed to the back surface of the package main body 61 in an abutting state.

The tip of the lead 71 projecting to the surface side of the package body 61 and one electrode of the wire bonding portion 67 of the wiring 65 of the submount 64 and one electrode of the light receiving element 70 are electrically connected by a conductive wire 73. Have been. The electrode on the back surface of the light receiving element 70 is electrically connected to one lead 71 via the package body 61.

The lower left diagram of FIG. 16 is an equivalent circuit diagram of the semiconductor laser array device 60.

On the other hand, the lid 62 has a cap structure, and has a laser beam (laser beam) 75 at its center.
Has a light transmission window 76 for transmitting light. The light transmitting window 76 has a transparent glass plate 77
Are formed by overlapping and fixing.

In such a semiconductor laser array device 60, by applying a predetermined voltage to each of the predetermined leads 71, one or both of the laser diodes 22 are operated to emit a laser beam 75 from the light transmission window 76. can do. Further, these light outputs can be monitored by the light receiving element 70.

FIG. 19 shows the semiconductor laser array device 60.
FIG. 3 is a schematic diagram showing a state in which is incorporated in a laser beam printer.

The two laser beams (laser beams) 75 emitted from the semiconductor laser array device 60 are reflected by a polygon mirror 80 whose rotation is controlled, and condensed on the surface of a photosensitive drum 82 of a laser beam printer through an fθ lens 81. . The laser beam 75 is scanned along the axial direction of the photosensitive drum 82. Further, the photosensitive drum 82 rotates.

Since the photosensitive drum 82 is uniformly charged before writing, the portion irradiated with the laser beam 75 loses its potential, and carbon powder (toner) adheres there and is developed. . A laser beam printer is performed by copying the toner onto paper by electrostatic force at a transfer portion (not shown).

Since the semiconductor laser array device 60 emits two laser beams 75, it is possible to perform wide visualization with the two laser beams 75 in one scan.
The printing time of a predetermined line is halved as compared with the case of one laser beam 75.

In the semiconductor laser device 1a of this embodiment, since the active layer 4 is confined by the pair of disordered layers 15 in each of the semiconductor laser portions 30, effective current confinement can be performed, and the current confinement portion can be formed. Spread of current can be suppressed, and reactive current can be reduced. As a result, the threshold value decreases, and a reduction in operating current can be achieved. As a result, the semiconductor laser device 60 incorporating the semiconductor laser element 1a is also an excellent semiconductor laser device having a small threshold value and a small operating current.

The semiconductor laser device 60 of the present embodiment
Is a P-type GaAs substrate, and the cathode electrode of each semiconductor laser section 30 can be controlled independently.

(Embodiment 4) FIG. 20 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 4) of the present invention.

The semiconductor laser device 1 of the fourth embodiment differs from the semiconductor laser device 1 of the first embodiment in that an N-type Ga
A cap layer 14 made of As is provided.
The electrode 9 is provided on the layer 14 and the upper cladding layer 5 made of thin N-type GaAlAs on the side surface of the ridge 6. The portion of the active layer that deviates from the ridge 6 is a disordered layer 15 due to diffusion of impurities.

Such a semiconductor laser device 1 is manufactured by the following method.

On one surface of a semiconductor substrate 2 of P-type GaAs (first conductivity type), a lower cladding layer 3 of P-type GaAlAs, an active layer 4 of MQW 4, and an N-type GaAlAs (second
A step of sequentially epitaxially growing an upper cladding layer 5 (conductivity type) and an N-type GaAs layer 14 (cap layer) of N-type GaAs; Using the mask as an etching mask to form a stripe-shaped ridge 6 by etching to an intermediate depth in the upper cladding layer 5, and diffusing impurities into an active layer portion deviating from the ridge 6 using the mask to disorderly Forming the passivation layer 15 and, after removing the mask, the N-type GaAs
forming an electrode 9 (first electrode) on the s layer 14 (cap layer) and the upper cladding layer 5; and forming an electrode 10 (second electrode) on the back surface of the semiconductor substrate 2 to form a semiconductor laser. The semiconductor laser device 1 is formed by the steps of forming

In the semiconductor laser device 1 according to the fourth embodiment, although no block layer is provided, the active layer portion deviating from the ridge 6 is the disordered layer 15.
Since the current constriction of the light emitting portion can be accurately and reliably performed by the pair of disordered layers 15, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced.
In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

In the method of manufacturing the semiconductor laser device 1 according to the fourth embodiment, the number of steps is reduced, and the manufacturing cost of the semiconductor laser device 1 can be reduced.

(Embodiment 5) FIG. 21 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 5) of the present invention.

The semiconductor laser device 1 of the fifth embodiment has a configuration in which the cap layer 8 is formed over the entire area of the upper cladding layer 5 including the ridge 6 in the semiconductor laser device 1 of the fourth embodiment. I have.

The semiconductor laser device 1 of the fifth embodiment is manufactured by the following method.

On one surface of a semiconductor substrate 2 of P-type GaAs (first conductivity type), a lower cladding layer 3 of P-type GaAlAs, an active layer 4 of MQW 4, and an N-type GaAlAs (second
A step of epitaxially growing an upper cladding layer 5 of conductive type), forming a stripe-shaped mask on a part of the upper cladding layer 5 and etching the intermediate cladding layer 5 to an intermediate depth using the mask as an etching mask. Forming a stripe-shaped ridge 6, using the mask to diffuse impurities into an active layer portion deviating from the ridge 6 to form a disordered layer 15, and removing the semiconductor after removing the mask. Forming a cap layer 8 of N-type GaAs (second conductivity type) on the entire surface of the substrate 2;
The semiconductor laser device 1 is formed by a process of forming a (first electrode) and a process of forming an electrode 10 (second electrode) on the back surface of the semiconductor substrate 2 to form a semiconductor laser.

Note that an N-type GaAs layer (that is, a cap layer) may be formed on the upper cladding layer 5 when forming a multi-layered semiconductor layer before the ridge 6 is formed. This is because when growing an epitaxial layer on GaAlAs,
It is provided for the purpose of preventing the growth interface from being oxidized.

The semiconductor laser device 1 of the fifth embodiment has a structure in which the entire upper clad layer 5 including the upper surface of the ridge 6 is covered with the cap layer 8 and no block layer is provided. Is a disordered layer, the current confinement of the light-emitting portion can be performed accurately and reliably by the pair of disordered layers. Therefore, although no block layer is provided, the active layer portion deviating from the ridge 6 has a disordered layer. Since it is 15, the current constriction of the light emitting portion can be accurately and reliably performed by the pair of disordered layers 15, so that the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced. . In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

In the method of manufacturing the semiconductor laser device 1 of the fifth embodiment, the number of steps is reduced, and the manufacturing cost of the semiconductor laser device 1 can be reduced.

(Embodiment 6) FIG. 22 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 6) of the present invention.

The semiconductor laser device 1 of the sixth embodiment has the same structure as that of the semiconductor laser device 1 of the fourth embodiment except that the electrode 9 is formed between the ridge 6 and the upper cladding layer 5 on the side surface of the N-type GaAs layer 14. Is provided with a block layer 7 made of P-type GaAlAs or P-type GaAs. Then, the block layer 7 and the N-type GaAs layer 1
The structure is such that an electrode 9 (first electrode) is provided over 4 (cap layer). The electrode 9 may have a structure extending on the block layer 7. However, even in this case, a wiring shape is required to provide a bonding pad for connecting a wire to the electrode 9 from above the active layer 4.

The semiconductor laser device 1 of the sixth embodiment is manufactured by the following method.

On one surface of a semiconductor substrate 2 of P-type GaAs (first conductivity type), a lower cladding layer 3 of P-type GaAlAs, an active layer 4 of MQW 4, and an N-type GaAlAs (second
A step of sequentially epitaxially growing an upper cladding layer 5 of N-type GaAs and an upper cladding layer 5 of N-type GaAs, and forming a stripe-shaped mask on a part of the N-type GaAs layer 14. Using the mask as an etching mask to form a stripe-shaped ridge 6 by etching to an intermediate depth in the upper cladding layer 5, and diffusing impurities into an active layer portion deviating from the ridge 6 using the mask to disorderly Forming the passivation layer 15 and, after removing the mask, the N-type GaAs
P-type GaAl on the upper cladding layer 5 on both sides of the s layer 14
Forming a block layer 7 made of As or P-type GaAs; forming an electrode 9 (first electrode) on the N-type GaAs layer 14 and the block layer 7; The step of forming the electrode 10 (second electrode) to form a semiconductor laser forms the semiconductor laser device 1.

The semiconductor laser device 1 of the sixth embodiment has a structure in which the first electrode is formed on the N-type GaAs layer 14 on the ridge 6 and on the block layer 7 on the side surface of the ridge 6. However, also in this structure, as in the first embodiment, since the active layer portion deviating from the ridge 6 is the disordered layer 15, the current constriction of the light emitting portion is accurately and reliably performed by the pair of disordered layers 15. Therefore, the threshold value and the efficiency of the laser diode can be reduced and the operating current can be reduced. In addition, the disordering causes a difference in refractive index between the light emitting portion and the disordered layer, thereby realizing a waveguide structure. As a result, the threshold value can be further reduced, the efficiency can be further improved, and the operating current can be reduced.

Although the invention made by the inventor has been specifically described based on the embodiment, the invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the invention. Needless to say, for example, the multi-beam semiconductor laser device of the second embodiment can be manufactured by the semiconductor laser device structures of the fourth to sixth embodiments. It can also be incorporated in a semiconductor laser device as shown in FIG.

It is also possible to arrange more laser diodes on a single semiconductor substrate and further increase the number of laser beams to form a semiconductor laser array.

In the above embodiments and examples, the active layer has a multiple quantum well structure, but GaInP / AlGaIn.
In the case of a P-based semiconductor laser device, the active layer is GaP and In.
A natural superlattice in which P is alternately arranged is formed. Therefore, even in the case of a semiconductor laser device having such a structure, a disordered layer can be formed by diffusion of the impurity, and current confinement can be achieved.

In the above embodiments and examples, an example was described in which a P-type compound semiconductor substrate was used as the semiconductor substrate and the flow of electrons was narrowed.
A structure in which the flow of holes is narrowed using a type compound semiconductor substrate can be applied in the same manner as in the above embodiments and examples, and the same effects as those in the above embodiments and examples can be obtained.

[0126]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) In a semiconductor laser, the side surface of the active layer below the ridge is disordered to provide a lateral band gap difference between the light emitting portion and the side surface of the light emitting portion, thereby preventing the spread of electrons. Therefore, the threshold value and the efficiency can be reduced, and the operating current can be reduced.

(2) Since the refractive index difference in the horizontal direction is provided by disordering, and the actual waveguide structure is used, the threshold value and the efficiency can be further reduced and the operating current can be reduced.

(3) In the case of the structure of the multi-beam type semiconductor laser device, each semiconductor laser portion can be operated independently by isolating each semiconductor laser portion, and the usability is improved.

(4) In the case of the structure of a multi-beam type semiconductor laser device, a structure in which a current flow is narrowed by using a P-type semiconductor substrate can be achieved, so that high-speed operation can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor laser device according to an embodiment (Embodiment 1) of the present invention.

FIG. 2 is an explanatory diagram showing an effect of the semiconductor laser device of the first embodiment.

FIG. 3 is a perspective view of a semiconductor laser device according to an embodiment (Example 1) of the present invention.

FIG. 4 is a cross-sectional view of the semiconductor substrate in a state where a plurality of semiconductor layers are formed on one surface of the semiconductor substrate in manufacturing the semiconductor laser device of the first embodiment.

FIG. 5 is a cross-sectional view of the semiconductor substrate in a state where a ridge is formed using a mask in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 6 is a cross-sectional view of the semiconductor substrate in a state where a diffusion source layer is formed on the upper clad layer that is off the ridge in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 7 is a cross-sectional view showing the semiconductor substrate in a state where a disordered layer is formed by impurity diffusion in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 8 is a cross-sectional view of the semiconductor substrate from which the diffusion source layer has been removed in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 9 is a cross-sectional view of the semiconductor substrate in a state where a block layer is formed in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 10 is a cross-sectional view of the semiconductor substrate with the cap layer formed in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 11 is a cross-sectional view of the semiconductor substrate in a state where a cathode electrode is formed after mesa etching in the manufacture of the semiconductor laser device of the first embodiment.

FIG. 12 is a cross-sectional view of the semiconductor substrate in a state where an anode electrode is formed in manufacturing the semiconductor laser device of the first embodiment.

FIG. 13 is a cross-sectional view of a semiconductor substrate showing a state in which an impurity is implanted into an upper cladding layer portion which is separated from a ridge after a ridge is formed in the manufacture of a semiconductor laser device according to another embodiment (Example 2) of the present invention. .

FIG. 14 is a cross-sectional view of a semiconductor substrate showing a state in which an implanted impurity is diffused by annealing to make an active layer a disordered layer in the manufacture of the semiconductor laser device of Example 2;

FIG. 15 is a perspective view showing a semiconductor laser device according to another embodiment (Embodiment 2) of the present invention.

FIG. 16 is a partially cutaway perspective view showing a semiconductor laser device according to another embodiment (Embodiment 3) of the present invention.

FIG. 17 is a perspective view of a submount incorporated in the semiconductor laser device of the third embodiment.

FIG. 18 is a perspective view showing a semiconductor laser element fixed to a submount incorporated in the semiconductor laser device of Embodiment 3;

FIG. 19 is an explanatory diagram illustrating a use state of the semiconductor laser device according to the third embodiment.

FIG. 20 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 4) of the present invention.

FIG. 21 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 5) of the present invention.

FIG. 22 is a schematic sectional view showing a semiconductor laser device according to another embodiment (Embodiment 6) of the present invention.

FIG. 23 is a sectional view showing a conventional semiconductor laser device.

FIG. 24 is a schematic view showing the movement of a hole that is current confined in a conventional semiconductor laser device.

FIG. 25 is a schematic view showing the movement of electrons that are confined in a conventional semiconductor laser device.

[Explanation of symbols]

1, 1N, 1P: semiconductor laser element (semiconductor laser chip), 2: semiconductor substrate, 3: clad layer (lower clad layer), 4: active layer, 5: clad layer (upper clad layer),
7 ... block layer, 8 ... cap layer, 9,10 ... electrode, 1
1 ... holes (holes), 12 ... electrons, 15 ... disordered layer,
Reference numeral 20: mask, 21: ZnO film, 22: diffusion source layer, 23
... an insulating film (SiO ₂ film), 25 ... an impurity implantation layer, 30 ...
Semiconductor laser (semiconductor laser part), 31: mesa etching groove, 60: semiconductor laser device, 61: package body, 62: lid, 63: heat sink, 64: submount, 65: wiring, 66: solder layer, 67: Wire bonding portion, 68 metallized layer, 70 light receiving element, 71
... external electrode terminals (leads), 72 ... insulator, 73 ... wires, 75 ... laser beam (laser light), 76 ... light transmission window, 77 ... transparent glass plate, 80 ... polygon mirror, 81
... fθ lens, 82 ... photosensitive drum.

Claims (15)

[Claims] A first conductivity type semiconductor substrate; a first conductivity type lower cladding layer formed on one surface of the semiconductor substrate;
An active layer formed on the lower cladding layer, and a second layer formed on the active layer and partially having a stripe-shaped ridge.
A conductive type upper cladding layer, a second conductive type cap layer formed on the ridge of the upper cladding layer or over the entire upper cladding layer, and a first electrode formed on at least the cap layer; A semiconductor laser device having a semiconductor laser comprising a second electrode formed on a back surface of the semiconductor substrate, wherein an active layer portion deviating from the ridge is a disordered layer due to diffusion of impurities. Semiconductor laser device. 2. The semiconductor device according to claim 1, further comprising: a side surface of said ridge or said ridge and a first conductivity type block layer formed on said upper cladding layer and on a side surface of a cap layer on said ridge. Item 2. The semiconductor laser device according to item 1. 3. The block layer and the ridge located on the side surface of the ridge are covered with a cap layer of a second conductivity type, and the second electrode is provided on the cap layer. The semiconductor laser device according to claim 2. 4. A cap layer is provided on the ridge, and the block layer is provided on side surfaces of the ridge and the cap layer. The cap layer is provided on at least the cap layer of the block layer and the cap layer. 3. The semiconductor laser device according to claim 2, wherein one electrode is provided. 5. The semiconductor device according to claim 1, wherein one surface of the semiconductor substrate is provided with one or a plurality of electrical insulating means reaching the surface layer of the semiconductor substrate, and each semiconductor substrate region partitioned by the electrical insulating means is provided with the semiconductor. The semiconductor laser device according to any one of claims 1 to 4, wherein a laser is formed. 6. The semiconductor laser device according to claim 1, wherein said semiconductor substrate is a P-type semiconductor. 7. The disordering layer according to claim 1, wherein the block layer and the cap layer above the disordering layer do not contain impurities for disordering. 3. The semiconductor laser device according to item 1. 8. The semiconductor laser device according to claim 1, wherein said active layer has a multiple quantum well structure. 9. A first conductive type semiconductor substrate having a first conductive type
A step of sequentially epitaxially growing a lower cladding layer of a conductive type, an active layer, and an upper cladding layer of a second conductive type; forming a stripe-shaped mask on a part of the upper cladding layer and using the mask as an etching mask; A step of forming a stripe-shaped ridge by etching the layer to an intermediate depth; and forming a block layer of the second conductivity type layer on the upper clad layer thinned by the etching by performing epitaxial growth with the mask remaining. Forming a second conductive type cap layer on the ridge and the block layer after removing the mask; and forming a first electrode on the cap layer and forming a second electrode on the semiconductor substrate. Forming a second electrode on the other surface, thereby forming a semiconductor laser. After the ridge is formed, a diffusion source layer containing an impurity to be diffused is deposited on the upper cladding layer while the mask at the time of the ridge formation is left, and then thermal diffusion is performed to remove impurities in the diffusion source layer. Forming a disordered layer by diffusing into the active layer portion deviating from the ridge,
Alternatively, an impurity is injected into the upper cladding layer and then annealed to diffuse the impurity into an active layer portion deviating from the ridge to form a disordered layer, and then form the block layer. Production method. 10. A step of sequentially epitaxially growing a lower conductive layer of a first conductive type, an active layer, an upper clad layer of a second conductive type, and a cap layer of a second conductive type on one surface of a semiconductor substrate of the first conductive type. Forming a stripe-shaped mask on a part of the cap layer and etching the mask to an intermediate depth of the upper clad layer using the mask as an etching mask to form a stripe-shaped ridge; and Forming a disordered layer by diffusing impurities into an active layer portion deviating from the ridge; forming a first electrode on the cap layer and the upper clad layer after removing the mask; Forming a second electrode on the back surface of the semiconductor laser to form a semiconductor laser. 11. A first conductivity type lower cladding layer, an active layer, a second conductivity type upper cladding layer, and, if necessary, a second conductivity type cap layer are sequentially formed on one surface of a first conductivity type semiconductor substrate. Forming a stripe-shaped mask on the cap layer or a part of the upper cladding layer, and etching the mask to an intermediate depth of the upper cladding layer to form a stripe-shaped ridge; Forming a disordered layer by diffusing impurities into the active layer portion deviating from the ridge using the mask, and forming a cap of the second conductivity type on the entire surface of the semiconductor substrate after removing the mask. Forming a layer, forming a first electrode on the cap layer, and forming a second electrode on the back surface of the semiconductor substrate to form a semiconductor laser. Forming a semiconductor laser device. 12. A step of sequentially epitaxially growing a lower conductive layer of a first conductive type, an active layer, an upper clad layer of a second conductive type, and a cap layer of a second conductive type on one surface of a semiconductor substrate of the first conductive type. Forming a stripe-shaped mask on a part of the cap layer and etching the mask to an intermediate depth of the upper clad layer using the mask as an etching mask to form a stripe-shaped ridge; and Forming a disordered layer by diffusing impurities into an active layer portion deviating from the ridge; and forming a first conductivity type blocking layer on the upper cladding layer on both sides of the cap layer after removing the mask. Forming a first electrode on the cap layer and the block layer; forming a second electrode on the back surface of the semiconductor substrate to form a semiconductor laser; Forming a semiconductor laser device. 13. The semiconductor laser device according to claim 9, wherein a plurality of the semiconductor lasers are monolithically formed on the semiconductor substrate so as to be independently driven. Production method. 14. The method for manufacturing a semiconductor laser device according to claim 9, wherein a multiple quantum well is formed as the active layer. 15. A package comprising: a package body; and a lid having a light transmission window for transmitting laser light;
A multi-beam semiconductor laser device fixed to the package body and emitting a plurality of laser beams; a plurality of external electrode terminals attached to the package body and extending inside and outside the package; 9. A semiconductor laser device having a connection means for connecting each electrode of the semiconductor laser element and the external electrode terminal, wherein the multi-beam type semiconductor laser element according to claim 5. A semiconductor laser device having a configuration.