JP2000049115A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a method of manufacturing a semiconductor device capable of suppressing generation of foreign matter and improving a manufacturing yield in a manufacturing process of a wiring layer having a plug. SOLUTION: After an insulating film 7 is formed on a semiconductor substrate (wafer) 1 on which semiconductor elements are formed, the insulating film 7 is formed.
Forming a through-hole 8 in a selective region of FIG. 1, forming a thin barrier metal film 9 on the surface of the through-hole 8 and the insulating film 7, depositing a tungsten film 10 on the wafer, 7, the surface of the tungsten film 10 buried in the through hole 8 and the surface of the barrier metal film 9 are flush with each other, and the tungsten film buried in the through hole 8 is removed. The method includes a step of forming a plug made of 10, a step of removing foreign matter generation elements in the barrier metal film 9 and the like by a water spray cleaning process, and a step of forming a wiring layer 11 on a wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device capable of suppressing the generation of foreign matter and improving the manufacturing yield in the process of manufacturing a wiring layer having plugs. It relates to a manufacturing method.

[0002]

2. Description of the Related Art The present inventors have studied a method for manufacturing a semiconductor device. The following is a technique studied by the present inventors, and the outline is as follows.

That is, in a method of manufacturing a semiconductor device, for example, a MOSFET (Metal Oxide Semiconductor) is used.
An insulating film is formed on a wafer consisting of a semiconductor substrate on which a field effect transistor is formed, a through hole is formed in the insulating film, and a plug having a tungsten film is embedded in the through hole, and then electrically connected to the plug. Wiring layers are formed.

In this case, a plug having a tungsten film is manufactured by forming a thin film of titanium nitride (TiN) on the surface of a through hole and an insulating film in which the through hole is formed.
After forming a barrier metal film made of a film, a tungsten film is formed on the wafer, and then the tungsten film other than the tungsten film embedded in the through hole is removed by an etch-back method using dry etching.

[0005] Thereafter, the wafer is left in a clean room for the current full-scale mass production. After 1-2 days, the wafer is taken out of the clean room, and an aluminum layer as a wiring layer is formed on the wafer by a sputtering method. Then, unnecessary regions of the aluminum layer are removed using a lithography technique and a selective etching technique to form a wiring layer made of a patterned aluminum layer.

[0006] As a document describing a technique for forming a wiring layer in a semiconductor device, for example, "'90" published by Press Journal Co., Ltd. on November 2, 1989.
Latest semiconductor process technology "p. 267 to p. 273.

[0007]

However, according to the above-described method of manufacturing a semiconductor device which has been mass-produced, a titanium nitride film formed on a surface of an insulating film before a wiring layer is formed. Since foreign matter is generated in the barrier metal film, the foreign matter may cause an abnormality in a pattern of the wiring layer when forming a wiring layer made of an aluminum layer, thereby reducing a semiconductor device manufacturing yield. It has been clarified that a large problem has occurred when mass-producing semiconductor devices.

As a result of the study by the present inventor, it has become clear that the causes of the above-mentioned foreign matter are as follows. That is, when the tungsten film is removed by the etch back method, a metal made of titanium is generated by the plasma,
The reaction of fluorine with SF ₆ as an etching gas at the time of etching back the tungsten film generates TiF _4, which is the original form of foreign matter.

Thereafter, the wafer up to the manufacturing process for forming the wiring layer is left in a clean room, and during that time, the moisture in the air chemically reacts with TiF ₄ to generate titanic acid. It became clear that it was.

[0010] Therefore, the titanic acid absorbs moisture, forms a sol and expands in volume, and the surface of the titanic acid is converted to TiO ₂ by the subsequent surface drying. As a result, it became clear that rock-like foreign substances in which the inside of TiO ₂ was titanic acid was generated. The foreign matter due to titanic acid is also generated when TiCl ₄ is present.

An object of the present invention is to provide a method of manufacturing a semiconductor device capable of suppressing the generation of foreign matters and improving the manufacturing yield in a manufacturing process of a wiring layer having a plug.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0013]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, according to the method of manufacturing a semiconductor device of the present invention, an insulating film is formed on a wafer formed of a substrate on which semiconductor elements are formed, and then a through hole is formed in a selective region of the insulating film. Process, forming a thin barrier metal film on the surface of the through hole and the insulating film, depositing a tungsten film on the wafer, removing the tungsten film on the insulating film and removing the tungsten embedded in the through hole. A process of forming a plug made of a tungsten film embedded in a through hole by making a part of the surface of the film and the surface of the barrier metal film the same plane, and water-jet cleaning of a foreign metal generation element in the barrier metal film and the like. It has a step of removing by processing and a step of forming a wiring layer on the wafer.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(First Embodiment) FIGS. 1 to 9 are schematic cross-sectional views showing manufacturing steps of a semiconductor device according to a first embodiment of the present invention. The method for manufacturing a semiconductor device according to the present embodiment includes:
This is a method for manufacturing a semiconductor integrated circuit device including a MOSFET as a component. The method for manufacturing the semiconductor device according to the present embodiment will be described with reference to FIG.

First, a MOSFET as a semiconductor element of a semiconductor device is formed on a semiconductor substrate (wafer) 1 (FIG. 1).

That is, a field insulating film 2 made of a silicon oxide film is formed on a device isolation region, which is a selective region on the surface of a semiconductor substrate (wafer) 1 made of, for example, a p-type silicon single crystal by a thermal oxidation process. Form. Next, a gate insulating film 3 made of, for example, a silicon oxide film is formed on the semiconductor substrate 1, and a conductive polycrystalline silicon film is deposited on the gate insulating film 3, followed by a lithography technique and a selective etching technique. Is used to form a gate electrode 4 by patterning the polycrystalline silicon film and to form a patterned gate insulating film 3.

Thereafter, a sidewall spacer 5 made of, for example, a silicon oxide film is formed on the side wall of the gate electrode 4. Thereafter, an n-type impurity such as phosphorus is ion-implanted into the semiconductor substrate 1 to form an n-type semiconductor region 6 serving as a source and a drain.

In this case, the above-described semiconductor device manufacturing process includes an n-channel MOS
Although an FET is formed, a p-channel MOSFET other than an n-channel MOSFET, CM
An embodiment in which various semiconductor elements such as an OSFET, a bipolar transistor, and a capacitor are formed can be employed.

Next, after an insulating film 7 is formed on the semiconductor substrate 1, a through hole (connection hole) 8 as a contact hole is formed in the insulating film 7 (FIG. 2).

In this case, the insulating film 7 is formed by depositing, for example, a silicon oxide film using a CVD (Chemical Vapor Deposition) method. After that, the surface of the insulating film 7 is planarized by using an etch-back method to form the insulating film 7 having a flat surface. After that, a through hole 8 is formed in the insulating film 7 using a lithography technique and a selective etching technique.

Thereafter, a barrier metal film 9 made of a thin titanium nitride film is formed on the surfaces of the through holes 8 and the insulating film 7 by using a sputtering method (FIG. 3). In this case, in addition to the titanium nitride film, the barrier metal film 9 of the present embodiment can be a titanium film or a barrier metal film 9 having a laminated structure of a titanium film and a titanium nitride film. Therefore, the barrier metal film 9 of the present embodiment is
A titanium-based film such as a titanium nitride film or a titanium film can be used.

Next, a thick tungsten film 10 is deposited on the semiconductor substrate 1 by using the CVD method (FIG. 4).

Next, the tungsten film 1 on the insulating film 7 is etched using an etch-back method using dry etching.
0 is removed and a part of the surface of the tungsten film 10 buried in the through hole 8 is made flush with the surface of the barrier metal film 9 to form a plug made of the tungsten film 10 buried in the through hole 8. (FIG. 5).

In this case, as a manufacturing apparatus for dry etching used in the etch back method, a plasma etching apparatus or the like is used, and SF ₆ is used as an etching gas. Therefore, when the tungsten film 10 is removed by the etch-back method, a metal made of titanium is generated by the plasma, and the etching gas used for etching back the tungsten film 10 is S.
Due to the reaction of fluorine of F ₆ , TiF ₄
Has been generated.

Thereafter, a step of removing foreign matter-generating elements in the barrier metal film 9 and the like by a water spray cleaning process is performed. In this case, depending on the mode of the manufacturing apparatus for performing the water jet cleaning process, when water may be present on the wafer in some cases, foreign matter generation elements in the barrier metal film 9 and the like are removed by the water jet cleaning process. After the process,
A process of performing a heat treatment on the wafer to remove water adhering to the wafer is performed. Further, titanic acid is an element for generating foreign matter, and the titanium acid generating elements are titanium generated by plasma, fluorine in an etching gas (etching gas for performing etch-back), and water in the air.

Therefore, since the foreign matter producing element can be removed by the water jet cleaning process, it is possible to prevent the foreign matter from being generated on the barrier metal film 9 and the like.

Thereafter, after the step of removing the foreign matter-generating elements in the barrier metal film 9 and the like by the water spray cleaning process, the wafer is left in a clean room for full-scale mass production (FIG. 6).

In this case, the wafer of the present embodiment is subjected to a process of removing foreign matter-generating elements in the barrier metal film 9 and the like by a water jet cleaning process. Even if it is left inside, it is possible to eliminate the conventional phenomenon that the moisture in the air and TiF ₄ or TiCl ₄ chemically react during the leaving to generate titanic acid.

Therefore, as in the prior art, titanic acid absorbs moisture, causes solification, and expands in volume. Further, by subsequent surface drying, the surface of titanic acid is converted into TiO ₂ ,
It is possible to prevent a phenomenon that a rock-like foreign substance in which the inside of TiO ₂ is titanic acid is generated. As a result, no matter how long the wafer is left in the clean room, such as several days, it is possible to prevent foreign matter from being generated on the wafer.

Next, the wafer is taken out of the clean room, and a wiring layer 11 made of an aluminum layer is deposited on the semiconductor substrate 1 by using a sputtering method (FIG. 7).

In this case, since the generation of foreign matter on the barrier metal film 9 and the like is prevented, the bonding and adhesion with the plug formed of the barrier metal film 9 and the tungsten film 10 are good, so that the flattening is performed. The deposited wiring layer 11 can be deposited. As another mode of the present embodiment, a CVD method can be used as a mode for depositing the wiring layer 11 made of an aluminum layer.

Then, after a resist film 12 is applied on the semiconductor substrate 1, a patterned resist film 12 for forming a wiring layer pattern is formed by using a lithography technique.

In this case, the wiring layer 11 having a flat surface
Can form a resist film 12 having a flat surface by forming a resist film 12 having a flat surface, thereby forming a highly precise patterned resist film 12 corresponding to a pattern according to design specifications. can do. Further, it is possible to prevent the occurrence of a pattern failure of the resist film 12 when forming the wiring layer pattern, and to prevent a decrease in margin when forming the pattern of the resist film 12.

Next, the patterned wiring layer 11 and the patterned barrier metal film 9 are formed by using the resist film 12 as an etching mask and by using a selective etching technique such as dry etching (FIG. 2B). (FIG. 8).

In this case, the wiring layer 11 having a flat surface
And highly precisely patterned resist film 12
Is used as an etching mask to form the patterned wiring layer 11, whereby the wiring layer 11 that is patterned with high precision corresponding to the design specifications can be formed. In addition, it is possible to prevent the occurrence of a pattern defect in the wiring layer 11 and a decrease in margin in forming the pattern of the wiring layer 11.

Thereafter, the unnecessary photoresist film 1
2 is removed, an insulating film 13 as an interlayer insulating film is formed on the semiconductor substrate 1 by using a manufacturing process similar to the above-described manufacturing process shown in FIGS. After forming the through hole 14, the through hole 14
Then, a barrier metal film 15 made of a thin titanium nitride film is formed on the surface of the insulating film 13, then a tungsten film 16 is formed as a plug, and then a wiring layer 17 made of an aluminum layer is formed (FIG. 9).

Thereafter, according to the design specifications, the above-described manufacturing steps (the insulating film 13 as an interlayer insulating film, the through-hole 1
4, the barrier metal film 15, the tungsten film 16 serving as a plug, and the wiring layer 17 serving as a second wiring layer) are repeatedly formed to form a multilayer wiring layer. Is completed.

According to the above-described method of manufacturing a semiconductor device of the present embodiment, the barrier film is formed after the step of removing an unnecessary region of the tungsten film 10 using the etch-back method of the tungsten film 10 for forming the plug. By performing the step of removing the foreign matter generating element in the metal film 9 or the like by the water spray cleaning process, the foreign matter generating element can be removed by the water spray cleaning process, and thus the foreign matter is generated in the barrier metal film 9 or the like. Can be prevented.

Therefore, according to the method of manufacturing a semiconductor device of the present embodiment, since the wafer is subjected to the step of removing foreign matter-generating elements in the barrier metal film 9 or the like by a water jet cleaning process, full-scale mass production is advanced. for,
To eliminate the conventional phenomenon that, even when a wafer is left in a clean room, water in the air chemically reacts with TiF ₄ or TiCl ₄ to generate titanic acid. Can be. Therefore, as in the conventional titanate absorbs moisture, volume expands causing the sol by further subsequent surface drying, the surface of the titanate is TiO ₂ reduction, the interior of the TiO ₂ is a titanate The phenomenon that a rock-like foreign substance is generated can be prevented. As a result, no matter how long the wafer is left in the clean room, such as several days, it is possible to prevent foreign matter from being generated on the wafer.

According to the method of manufacturing a semiconductor device of the present embodiment, after a plug made of tungsten film 10 is formed, in a manufacturing process for forming wiring layer 11 electrically connected to the plug, When the wiring layer 11 is deposited on the wafer, the foreign matter is prevented from being generated in the barrier metal film 9 and the like, so that the bonding property and adhesiveness with the plug formed of the barrier metal film 9 and the tungsten film 10 are improved. For goodness, a flattened wiring layer 11 can be deposited.

Therefore, the resist film 1 is formed on the wafer.
2 is applied, when a patterned resist film 12 for forming a wiring layer pattern is formed by using a lithography technique, the resist film 12 is applied to the surface of the wiring layer 11 having a flat surface. By doing so, it is possible to form the resist film 12 having a flat surface, so that it is possible to form the highly accurately patterned resist film 12 corresponding to the pattern according to the design specifications. Further, it is possible to prevent the occurrence of a pattern failure of the resist film 12 when forming the wiring layer pattern, and to prevent a decrease in margin when forming the pattern of the resist film 12.

When the patterned wiring layer 11 and the patterned barrier metal film 9 are formed by using the resist film 12 as an etching mask and using a selective etching technique such as dry etching. ,
By using the wiring layer 11 having a flat surface and the resist film 12 patterned with high precision as an etching mask, the patterned wiring layer 11 is formed to meet design specifications. The wiring layer 11 patterned with high precision can be formed. In addition, it is possible to prevent the occurrence of a pattern defect in the wiring layer 11 and a decrease in margin in forming the pattern of the wiring layer 11.

As a result, according to the method of manufacturing a semiconductor device of the present embodiment, the wiring layer 11 which has been finely processed in a highly accurate pattern and has a high performance and a high reliability
By manufacturing the semiconductor device 1, a semiconductor device with high performance and high reliability can be manufactured with a high manufacturing yield.

(Embodiment 2) FIG. 10 is a schematic configuration diagram showing a semiconductor manufacturing apparatus used in a manufacturing process of a semiconductor device according to Embodiment 2 of the present invention.

As shown in FIG. 10, a semiconductor manufacturing apparatus 18 of the present embodiment includes a manufacturing apparatus 19 for removing an unnecessary region of a tungsten film and a manufacturing apparatus 20 for depositing a wiring layer on a wafer. A closed tunnel 21 for transporting a wafer is provided between them.

In this case, the manufacturing device 19 for removing unnecessary regions of the tungsten film is a manufacturing device for removing unnecessary regions of the tungsten film using an etch-back method. The manufacturing apparatus 20 for depositing a wiring layer on a wafer is a manufacturing apparatus capable of depositing a wiring layer made of an aluminum film or the like on a wafer using a sputtering method or a CVD method.

The method for manufacturing a semiconductor device according to the present embodiment
Manufacturing apparatus 19 for removing unnecessary regions of a tungsten film and manufacturing apparatus 2 for depositing a wiring layer on a wafer
The manufacturing process for removing an unnecessary region of the tungsten film using the semiconductor manufacturing apparatus 18 in which the closed tunnel 21 for transferring the wafer is provided between the wafer and a wiring layer on the wafer. The other manufacturing steps are the same as those of the semiconductor device of the first embodiment described above.

According to the method of manufacturing a semiconductor device of the present embodiment, foreign substances are generated in the manufacturing process of removing unnecessary regions of tungsten film 10 using manufacturing apparatus 19 of semiconductor manufacturing apparatus 18. However, the wafer after the manufacturing process is transferred to the manufacturing device 20 through the closed tunnel 21 and the manufacturing device 20 is used to perform a manufacturing process of depositing the wiring layer 11 made of an aluminum layer or the like on the wafer. Accordingly, even if there is a foreign matter generating element, the generation of foreign matter can be extremely reduced.

Therefore, according to the method of manufacturing a semiconductor device of the present embodiment, even if there is a foreign matter generating element, the generation of the foreign matter can be extremely reduced, so that the performance and reliability of the wiring layer 11 can be reduced. Since the height can be increased, a semiconductor device with high performance and high reliability can be manufactured with a high manufacturing yield.

(Embodiment 3) FIG. 11 is a schematic configuration diagram showing a crust-type manufacturing apparatus used in a manufacturing process of a semiconductor device according to Embodiment 3 of the present invention.

As shown in FIG. 11, a crust type manufacturing apparatus 22 of the present embodiment includes a manufacturing apparatus 23 for removing an unnecessary region of a tungsten film and a manufacturing apparatus 24 for depositing a wiring layer on a wafer. A central chamber 25 in which a wafer is left is provided between the two.

In this case, the manufacturing device 22 for removing unnecessary regions of the tungsten film is a manufacturing device for removing unnecessary regions of the tungsten film by using an etch-back method. The manufacturing apparatus 24 for depositing a wiring layer on a wafer is a manufacturing apparatus capable of depositing a wiring layer made of an aluminum film or the like on a wafer by using a sputtering method or a CVD method. The central chamber 25 is in a vacuum state and is also a clean room.

The method of manufacturing a semiconductor device according to the present embodiment
Manufacturing apparatus 23 for removing unnecessary regions of a tungsten film and manufacturing apparatus 2 for depositing a wiring layer on a wafer
Using a crust-type manufacturing apparatus 22 provided with a central chamber 25 in which a wafer is left between the wafer 4 and a manufacturing step for removing an unnecessary region of a tungsten film, and depositing a wiring layer on the wafer For the manufacturing process.
Other manufacturing steps are the same as the manufacturing steps of the semiconductor device of the first embodiment described above.

According to the method of manufacturing a semiconductor device of the present embodiment, foreign substances are generated by the manufacturing process of removing unnecessary regions of tungsten film 10 using manufacturing apparatus 23 of crust type manufacturing apparatus 22. However, the manufacturing process in which the wafer after the manufacturing process is transferred to the manufacturing device 24 through the central chamber 25 and the wiring layer 11 made of an aluminum layer or the like is deposited on the wafer using the manufacturing device 24 is performed. By being able to perform, even if there is a foreign matter generation element, the generation of foreign matter can be extremely reduced.

Therefore, according to the method of manufacturing a semiconductor device of the present embodiment, even if there is a foreign matter generating element, the generation of the foreign matter can be extremely reduced, so that the performance and reliability of the wiring layer 11 can be reduced. Since the height can be increased, a semiconductor device with high performance and high reliability can be manufactured with a high manufacturing yield.

According to the semiconductor device manufacturing method of the present embodiment, the central chamber 25 in the crust type manufacturing device 22
Since the chamber is in a vacuum state and is also a clean chamber, the wafer can be left in the central chamber 25 according to the design specifications.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, according to the present invention, as a method for removing an unnecessary region of a tungsten film, a CMP (Chemical
A mechanical polishing (chemical mechanical polishing) method can be applied, and a CMP apparatus can be applied as a manufacturing apparatus for removing an unnecessary region of a tungsten film.

In the present invention, as the material of the wiring layer, a conductor such as copper or conductive polycrystalline silicon can be applied according to the design specifications, in addition to aluminum.

Further, according to the present invention, a semiconductor substrate forming a semiconductor element can be changed to various substrates such as an SOI (Silicon on Insulator) substrate. As a semiconductor element formed on a substrate such as a semiconductor substrate, In addition to the MOSFET, a semiconductor element in which various semiconductor elements such as a CMOSFET and a bipolar transistor are combined can be applied.

The present invention relates to a MOSFET, a CMOS,
Logic or DRA with FET etc. as components
M (Dynamic Random Access Memory), SRAM (Stat
The present invention can be applied to a method of manufacturing various semiconductor integrated circuit devices having a memory system such as an IC (Random Access Memory).

[0064]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the method of manufacturing a semiconductor device of the present invention, after a manufacturing process of removing an unnecessary region of a tungsten film using a tungsten film etch-back method for forming a plug, foreign matter generation elements in a barrier metal film or the like are removed. By performing the step of removing the foreign matter by the water jet cleaning treatment, the foreign matter generating element can be removed by the water jet cleaning treatment, thereby preventing the generation of the foreign substance in the barrier metal film or the like.

(2). According to the method of manufacturing a semiconductor device of the present invention, a patterned wiring layer and a patterned barrier metal film are formed by using a resist film as an etching mask and using a selective etching technique such as dry etching. When forming, a patterned wiring layer is formed using a highly accurate patterned resist film as an etching mask, as well as a wiring layer having a flat surface. Corresponding high-precision patterned wiring layers can be formed. Further, it is possible to prevent the occurrence of a pattern defect in the wiring layer and a decrease in margin when forming the wiring layer pattern.

As a result, according to the method of manufacturing a semiconductor device of the present invention, it is possible to manufacture a high-performance and high-reliability wiring layer which is a finely processed wiring layer with a high-precision pattern. A high-performance and high-reliability semiconductor device can be manufactured with a high manufacturing yield.

(3). According to a method of manufacturing a semiconductor device according to another embodiment of the present invention, a wafer is disposed between a manufacturing apparatus for removing an unnecessary region of a tungsten film and a manufacturing apparatus for depositing a wiring layer on the wafer. Using a semiconductor manufacturing equipment in which a closed tunnel for transporting
A manufacturing process for removing unnecessary regions of the tungsten film and a manufacturing process for depositing a wiring layer on a wafer are performed.

According to a method of manufacturing a semiconductor device according to another embodiment of the present invention, a manufacturing apparatus for removing an unnecessary region of a tungsten film and a manufacturing apparatus for depositing a wiring layer on a wafer are provided. A manufacturing process for removing unnecessary regions of the tungsten film using a crust type manufacturing apparatus in which a central chamber in which a wafer is left is installed,
A manufacturing process for depositing a wiring layer on a wafer is performed.

Therefore, according to the method of manufacturing a semiconductor device of the present invention, even if there is a foreign matter generating element, the generation of the foreign matter can be extremely reduced, so that the performance and reliability of the wiring layer can be improved. Therefore, a semiconductor device with high performance and high reliability can be manufactured with a high manufacturing yield.

Further, according to the method of manufacturing a semiconductor device of the present invention, the central chamber in the crust-type manufacturing apparatus is in a vacuum state and is also a clean room, so that a wafer can be stored in the central chamber in accordance with the design specifications. You can leave it alone.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a manufacturing step of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a schematic sectional view illustrating a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 4 is a schematic sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is a schematic sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 6 is a schematic sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 8 is a schematic sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 9 is a schematic sectional view showing a manufacturing step of the semiconductor device according to the first embodiment of the present invention;

FIG. 10 is a schematic configuration diagram showing a semiconductor manufacturing apparatus used in a semiconductor device manufacturing process according to a second embodiment of the present invention;

FIG. 11 is a schematic configuration diagram illustrating a crust-type manufacturing apparatus used in a manufacturing process of a semiconductor device according to a third embodiment of the present invention;

[Explanation of symbols]

 Reference Signs List 1 semiconductor substrate (wafer) 2 field insulating film 3 gate insulating film 4 gate electrode 5 sidewall spacer 6 semiconductor region 7 insulating film 8 through hole 9 barrier metal film 10 tungsten film 11 wiring layer 12 resist film 13 insulating film 14 through hole 15 Barrier metal film 16 Tungsten film 17 Wiring layer 18 Semiconductor manufacturing equipment 19 Manufacturing equipment 20 Manufacturing equipment 21 Sealed tunnel 22 Crust type manufacturing equipment 23 Manufacturing equipment 24 Manufacturing equipment 25 Central room

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Fumiko Arakawa 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Semiconductor Division, Hitachi, Ltd. 20-1 Chome, Semiconductor Division, Hitachi, Ltd. (72) Inventor Atsushi Ogishima 5-20-1, Josuihonmachi, Kodaira-shi, Tokyo Incorporated, Semiconductor Division, Hitachi, Ltd. (72) Masayoshi Suzuki Tokyo 5-2-1, Josuihoncho, Kodaira City Semiconductor Company, Hitachi, Ltd. (72) Inventor Masayuki Kojima 5-2-1, Josuihonmachi, Kodaira City, Tokyo Semiconductor Company, Ltd. (72) Inventor Takashi Aoyagi 882 Mage, Hitachinaka-shi, Ibaraki Pref. Hitachi, Ltd.Measurement Equipment Division (72) Inventor Kazuo Nojiri Kodaira, Tokyo 5-20-1, Kamimizu Honcho Semiconductor Division, Hitachi, Ltd. (72) Inventor: Mitsui ▲ Yasu ▼ Yu 5-20-1, Kamimihoncho, Kodaira City, Tokyo Inside Semiconductor Division, Hitachi, Ltd. (72 Inventor Yoshiyuki Kaneko 832 Nagakubo, Horiguchi, Hitachinaka-shi, Ibaraki Pref. Within Hitachi Measurement Engineering Co., Ltd. 832 Nagakubo, Horiguchi, Hitachinaka City, Ibaraki Prefecture 2 F-term (reference) 4M104 AA01 BB30 DD06 DD99 FF18 FF22 GG09 GG10 GG16 5F033 AA02 AA25 AA29 AA64 AA66 AA72 BA02 DA15 DA04

Claims (8)

[Claims] A step of forming an insulating film on a wafer made of a substrate on which semiconductor elements are formed, and then forming a through hole in a selective region of the insulating film; After forming a thin barrier metal film on the surface of the film, depositing a tungsten film on the wafer, removing the tungsten film on the insulating film and removing the tungsten film embedded in the through hole. Forming a part of the surface and the surface of the barrier metal film on the same plane to form a plug made of the tungsten film embedded in the through hole; Manufacturing a semiconductor device, comprising: a step of removing by a spray cleaning process; and a step of forming a wiring layer on the wafer. Method. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of heat-treating the wafer after the step of removing foreign matter-generating elements in the barrier metal film or the like by a water spray cleaning process. A method for manufacturing a semiconductor device. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the wafer is left in a clean room after a step of removing a foreign substance generation element in the barrier metal film or the like by a water spray cleaning process. A method for manufacturing a semiconductor device, comprising the steps of: 4. A step of forming an insulating film on a wafer comprising a substrate on which semiconductor elements are formed, and then forming a through hole in a selective region of the insulating film; Forming a thin barrier metal film on the surface of the film and depositing a tungsten film on the wafer; depositing a wiring layer on the wafer with a manufacturing apparatus for removing unnecessary regions of the tungsten film; Using a semiconductor manufacturing apparatus in which a closed tunnel for transferring the wafer is installed between the manufacturing apparatus for removing the tungsten film on the insulating film and the tungsten embedded in the through hole. A part of the surface of the film and the surface of the barrier metal film are flush with each other, and the tungsten film embedded in the through hole is formed of a tungsten film. Forming a sealing tunnel for transporting the wafer between a manufacturing apparatus for removing an unnecessary area of the tungsten film and a manufacturing apparatus for depositing a wiring layer on the wafer. Depositing a wiring layer on the wafer using a semiconductor manufacturing apparatus. 5. A step of forming an insulating film on a wafer made of a substrate on which semiconductor elements are formed, and then forming a through hole in a selective region of the insulating film; Forming a thin barrier metal film on the surface of the film and depositing a tungsten film on the wafer; and depositing a wiring layer on the wafer with a manufacturing apparatus for removing unnecessary regions of the tungsten film. Using a crust-type manufacturing apparatus in which a central chamber for leaving the wafer is set between the manufacturing apparatus and the manufacturing apparatus, the tungsten film on the insulating film is removed and embedded in the through-hole. A part of the surface of the tungsten film and the surface of the barrier metal film are flush with each other, and the tungsten film embedded in the through hole is formed of a tungsten film. A central chamber for leaving the wafer between a manufacturing apparatus for removing an unnecessary region of the tungsten film and a manufacturing apparatus for depositing a wiring layer on the wafer; Depositing a wiring layer on the wafer using a crust-type manufacturing apparatus. 6. The method for manufacturing a semiconductor device according to claim 4, wherein the manufacturing device for removing an unnecessary region of the tungsten film is a manufacturing device using an etch-back method, and A method for manufacturing a semiconductor device, wherein a manufacturing apparatus for depositing a wiring layer thereon is a manufacturing apparatus using a sputtering method or a CVD method. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the barrier metal film is
A method for manufacturing a semiconductor device, comprising a titanium-based film such as a titanium nitride film or a titanium film. 8. The method of manufacturing a semiconductor device according to claim 1, wherein said wiring layer is a wiring layer made of an aluminum layer. .