JP2000031609A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP2000031609A JP2000031609A JP10201859A JP20185998A JP2000031609A JP 2000031609 A JP2000031609 A JP 2000031609A JP 10201859 A JP10201859 A JP 10201859A JP 20185998 A JP20185998 A JP 20185998A JP 2000031609 A JP2000031609 A JP 2000031609A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- circuit
- copper plate
- heat
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 claims abstract description 84
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052802 copper Inorganic materials 0.000 claims abstract description 82
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000005219 brazing Methods 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 239000007787 solid Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 15
- 239000000843 powder Substances 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920000205 poly(isobutyl methacrylate) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミックス基板
に銅回路と放熱銅板とが設けられてなる回路基板の改良
に関するものであって、回路基板の信頼性を向上するこ
とを目的とするものである。本発明の回路基板は、電子
部品のパワーモジュール等の組立に好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a circuit board comprising a ceramic substrate provided with a copper circuit and a heat radiating copper plate, and an object thereof is to improve the reliability of the circuit board. is there. The circuit board of the present invention is suitable for assembling a power module or the like of electronic components.
【０００２】[0002]
【従来の技術】近年、ロボットやモーター等の産業機器
の高性能化に伴い、大電力・高能率インバーター等パワ
ーモジュールの変遷が進んでおり、半導体素子から発生
する熱も増加の一途をたどっている。この熱を効率よく
放散させるため、パワーモジュール基板では従来より様
々な方法が取られてきた。特に最近、良好な熱伝導を有
するセラミックス基板が利用できるようになったため、
その基板上に銅板等の金属板を接合し、回路を形成後、
そのままあるいはＮｉメッキ等の処理を施してから半導
体素子を実装する構造も採用されつつある。2. Description of the Related Art In recent years, power modules such as high-power and high-efficiency inverters have been changing with the advancement of the performance of industrial equipment such as robots and motors, and the heat generated from semiconductor devices has been increasing steadily. I have. In order to efficiently dissipate this heat, various methods have conventionally been used for power module substrates. Especially recently, ceramic substrates with good thermal conductivity have become available,
After joining a metal plate such as a copper plate on the board and forming a circuit,
A structure in which a semiconductor element is mounted as it is or after performing a process such as Ni plating has been adopted.
【０００３】このようなモジュールは、当初、簡単な工
作機械に使用されてきたが、ここ数年、溶接機、電車の
駆動部、電気自動車に使用されるようになり、より厳し
い環境条件下における耐久性と更なる小型化が要求され
るようになってきた。そこで、セラミックス基板に対し
ても、電流密度を上げるための金属回路厚の増加、熱衝
撃等に対する耐久性の向上が要求され、セラミックス焼
結体の新たな製造研究により対応している。[0003] Such modules have initially been used in simple machine tools, but in recent years have been used in welding machines, train drives, electric vehicles and in more severe environmental conditions. Durability and further miniaturization have been required. Therefore, the ceramic substrate is required to have an increased metal circuit thickness for increasing the current density, and to have improved durability against thermal shock and the like.
【０００４】[0004]
【発明が解決しようとする課題】従来、汎用されている
回路基板は、アルミナ基板又は窒化アルミニウム基板の
一方の面に銅回路、他方の面に放熱銅板を形成させてな
る構造のものである。このような回路基板は、銅とセラ
ミックスの熱膨張係数が異なるため、熱衝撃が繰り返し
受けるととセラミックスと銅との接合端面に熱応力がか
かり、銅回路又は放熱銅板が剥離したり、セラミックス
基板が割れたりするなどの問題がある。Conventionally, a generally used circuit board has a structure in which a copper circuit is formed on one surface of an alumina substrate or an aluminum nitride substrate and a heat-dissipating copper plate is formed on the other surface. In such a circuit board, since the thermal expansion coefficients of copper and ceramics are different, if thermal shock is repeatedly applied, a thermal stress is applied to the joint end face of the ceramic and copper, and the copper circuit or the heat-dissipating copper plate peels off, There are problems such as cracking.
【０００５】この問題を解決する手段の一つとして、銅
回路と放熱銅板の厚みを変えて、熱サイクル時に熱応力
のかかる方向へ基板を反らせることにより、セラミック
ス基板のクラックや、銅回路又は放熱銅板の剥離に対す
る信頼性を向上させる方法がある。One of the means for solving this problem is to change the thickness of the copper circuit and the heat-dissipating copper plate and to warp the substrate in a direction in which thermal stress is applied during a thermal cycle, thereby causing cracks in the ceramic substrate, copper circuit or heat dissipation. There is a method for improving the reliability with respect to peeling of a copper plate.
【０００６】しかし、銅回路と放熱銅板の厚みを変えた
場合、モジュール組立において回路基板とベース銅板と
を半田付けする際、回路基板の反りにより溶融した半田
が均一に塗れ拡がらないことから、半田ボイドが発生
し、熱サイクル時に半田クラックが生じやすくなるとい
う問題があった。However, when the thickness of the copper circuit and the thickness of the heat-dissipating copper plate are changed, when the circuit board and the base copper plate are soldered in module assembly, the molten solder due to the warpage of the circuit board is not uniformly applied and spread. There is a problem that solder voids are generated and solder cracks are easily generated during a heat cycle.
【０００７】本発明は、上記に鑑みてなされたものであ
り、熱履歴を受けたときに発生する反りが小さい高信頼
性の回路基板を提供することを目的とするものである。[0007] The present invention has been made in view of the above, and an object of the present invention is to provide a highly reliable circuit board which is less warped when subjected to a thermal history.
【０００８】[0008]
【課題を解決するための手段】すなわち、本発明は、セ
ラミックス基板の一方の面に銅回路、他方の面に放熱銅
板が、それぞれＡｇ成分と活性金属成分を含むろう材を
用いて接合されてなるものであって、放熱銅板側へ固体
拡散しているＡｇ層の厚みが銅回路側よりも１０μｍ以
上厚くなっていることを特徴とする回路基板である。ま
た、本発明は、セラミックス基板の一方の面に銅回路、
他方の面に放熱銅板が形成されてなるものにおいて、銅
回路に対する放熱銅板の体積率が３０〜９０％であり、
空気中で３５０℃×５分、２５℃×５分を１サイクルと
する通炉試験を５回行った後のＪＩＳ Ｂ ０６２１に
従う平面度が１００μｍ以下であることを特徴とする回
路基板である。That is, according to the present invention, a copper circuit is bonded on one side of a ceramic substrate and a heat-dissipating copper plate is bonded on the other side using a brazing material containing an Ag component and an active metal component. A circuit board, characterized in that the thickness of the Ag layer solid-dispersed to the heat-dissipating copper plate side is at least 10 μm thicker than that of the copper circuit side. Also, the present invention provides a copper circuit on one side of the ceramic substrate,
A heat radiation copper plate formed on the other surface, wherein the volume ratio of the heat radiation copper plate to the copper circuit is 30 to 90%;
A circuit board characterized by having a flatness of 100 μm or less according to JIS B 0621 after performing a furnace test five times in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle.
【０００９】[0009]
【発明の実施の形態】以下、更に詳しく本発明について
説明すると、回路基板は、モジュールを組み立てる際
に、Ｓｉチップ、ベース銅板の半田付け、シリコーンゲ
ル、エポキシ樹脂の硬化等によって、４〜５回程度の熱
履歴を受ける。熱処理の温度は、使用する半田の種類及
び前工程で使用された半田が溶融しないように調整さ
れ、最高で３５０℃程度となる。ここで、銅回路と放熱
銅板の体積が異なる場合、熱処理によって発生する熱応
力が異なるために回路基板に反りが生じ、溶融した半田
が均一に拡がらずに半田ボイドの原因となっている。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below. A circuit board is assembled four to five times by assembling a module by soldering a silicon chip, a base copper plate, curing silicone gel, epoxy resin, and the like. Receive a degree of heat history. The temperature of the heat treatment is adjusted so that the type of solder to be used and the solder used in the previous process are not melted, and is about 350 ° C. at the maximum. Here, when the volume of the copper circuit is different from that of the heat-dissipating copper plate, the circuit board is warped due to the different thermal stresses generated by the heat treatment, and the molten solder is not spread evenly, causing solder voids.
【００１０】このような半田ボイドを防ぐためには、銅
回路と放熱銅板の体積を等しくすればよいが、そうした
場合には発生する熱応力に耐えきれずセラミックス基板
にクラックが発生したり、銅回路が剥離してしまい、熱
サイクル時の信頼性が大きく低下する。In order to prevent such solder voids, the volume of the copper circuit and that of the heat-dissipating copper plate may be made equal. In such a case, cracks may occur in the ceramic substrate due to the inability to withstand the generated thermal stress, Is peeled off, and the reliability during a thermal cycle is greatly reduced.
【００１１】そこで、銅回路と放熱銅板の体積が異なる
回路基板において、熱サイクル時の反りを低減させるた
めには、発生する熱応力差を小さくすればよい。本発明
者らは、セラミックス基板と銅板の接合時にろう材中に
含まれるＡｇ成分の固体拡散の距離を、銅回路よりも放
熱銅板の方を１０μｍ以上長くすることにより、発生す
る熱応力差を小さくすることができることを見いだし
た。Therefore, in a circuit board having a different volume between the copper circuit and the heat-dissipating copper plate, in order to reduce the warpage during the heat cycle, the difference in generated thermal stress may be reduced. SUMMARY OF THE INVENTION The present inventors have proposed a method for reducing the thermal stress difference generated by increasing the solid diffusion distance of the Ag component contained in the brazing material at the time of joining the ceramic substrate and the copper plate by at least 10 μm for the heat-dissipating copper plate compared to the copper circuit. I found that it can be made smaller.
【００１２】高純度の無酸素銅は、加熱処理すると柔ら
かくなり塑性変形しやすいが、これにろう材中のＡｇ成
分が固体拡散すると、銅は硬化し、これが原因となって
熱応力も大きくなる。銅板中へ固体拡散しているＡｇ層
の厚みの測定法については、特開平１０−１４５０３９
号公報に示されている。すなわち、回路基板の断面を研
磨後、電子線マイクロアナライザー（ＥＰＭＡ）によ
り、１μｍ当たりの電子線照射条件を１５．０ｋＶ、
１．０６×１０-7Ａ、３０ｍｓｅｃとして分析を行い、
Ａｇ強度ＩA が２０≦ＩA ≦４０を示す層の厚みを測定
してＡｇ層の厚みとする。Although high-purity oxygen-free copper is softened and easily plastically deformed by heat treatment, when the Ag component in the brazing material diffuses into the solid, the copper is hardened, and as a result, the thermal stress increases. . Regarding a method for measuring the thickness of the Ag layer which is solid-dispersed in the copper plate, see JP-A-10-145039.
No. in the official gazette. That is, after polishing the cross section of the circuit board, the electron beam irradiation condition per 1 μm was set to 15.0 kV by an electron beam microanalyzer (EPMA).
Analysis was performed at 1.06 × 10 −7 A, 30 msec.
Ag intensity I A is to measure the thickness of the layer shows a 20 ≦ I A ≦ 40 and the thickness of the Ag layer.
【００１３】本発明において、銅回路側と放熱銅板側に
固体拡散しているＡｇ層の厚みを変えるには、例えば実
施例に示すようにろう材の組成を変えるなどして、融点
の異なるろう材を用いればよい。そして、銅回路に対す
る銅放熱板の体積率が３０〜９０％である回路基板に対
し、銅回路側よりも放熱銅板側に固体拡散しているＡｇ
層の厚みを１０μｍ以上厚くすることによって、空気中
で３５０℃×５分、２５℃×５分を１サイクルとする通
炉試験を５回行った後のＪＩＳ Ｂ ０６２１に従う平
面度が１００μｍ以下と小さく抑えることができる。ま
た、抗折強度も２５ｋｇｆ／ｍｍ2以上と本来の高信頼
性を保ったものとなる。なお、銅回路側に固体拡散して
いるＡｇ層の厚みとしては１０〜３５μｍ程度が望まし
い。In the present invention, in order to change the thickness of the Ag layer which is solid-diffused on the copper circuit side and the heat-dissipating copper plate side, for example, the composition of the brazing material is changed as shown in the embodiments, so that the melting points differ. A material may be used. Then, for a circuit board in which the volume ratio of the copper heat radiating plate to the copper circuit is 30 to 90%, Ag that is solid-diffused to the heat radiating copper plate side rather than the copper circuit side is used.
By making the thickness of the layer 10 μm or more, the flatness according to JIS B 0621 after performing a furnace test five times in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle is 100 μm or less. It can be kept small. Also, the transverse rupture strength is 25 kgf / mm 2 or more, which maintains the original high reliability. The thickness of the Ag layer solid-diffused on the copper circuit side is preferably about 10 to 35 μm.
【００１４】本発明で使用されるセラミックス基板の材
質としては、窒化ケイ素、窒化アルミニウム、アルミナ
等であるが、パワーモジュールには窒化アルミニウムが
適している。窒化アルミニウム基板の厚みとしては、厚
すぎると熱抵抗が大きくなり、薄すぎると耐久性がなく
なるため、０．５〜０．８ｍｍ程度が好ましい。The material of the ceramic substrate used in the present invention is silicon nitride, aluminum nitride, alumina or the like, but aluminum nitride is suitable for the power module. As the thickness of the aluminum nitride substrate, if it is too thick, the thermal resistance increases, and if it is too thin, the durability is lost.
【００１５】セラミックス基板の表面性状は重要であ
り、微少な欠陥や窪み等は、銅回路、放熱銅板あるいは
それらの前駆体である銅板をセラミックス基板に接合す
る際に悪影響を与えるため平滑であることが望ましい。
従って、セラミックス基板は、ホーニング処理や機械加
工等による研磨処理が施されていることが好ましい。[0015] The surface properties of the ceramic substrate are important, and minute defects and dents have an adverse effect when joining a copper circuit, a heat-radiating copper plate, or a copper plate that is a precursor thereof to the ceramic substrate. Is desirable.
Therefore, it is preferable that the ceramic substrate has been subjected to a honing process or a polishing process such as machining.
【００１６】銅回路及び放熱銅板を形成する銅の純度は
９９．５％以上が好ましく、厚みは１００〜５００μｍ
が好ましい。The purity of copper forming the copper circuit and the heat dissipation copper plate is preferably 99.5% or more, and the thickness is 100 to 500 μm.
Is preferred.
【００１７】セラミックス基板に銅回路及び放熱銅板を
形成する方法としては、セラミックス基板と銅板との接
合体をエッチングする方法、銅板から打ち抜かれた回路
及び放熱板のパターンをセラミックス基板に接合する方
法等によって行うことができ、これらの際における接合
方法としては、活性金属ろう付け法を用いる。As a method of forming a copper circuit and a heat radiating copper plate on a ceramic substrate, there are a method of etching a joined body of the ceramic substrate and the copper plate, a method of bonding a circuit punched from the copper plate and a pattern of the heat radiating plate to the ceramic substrate, and the like. An active metal brazing method is used as a joining method in these cases.
【００１８】活性金属ろう付け法におけるろう材の金属
成分は、銀と銅を主成分とし、溶融時のセラミックス基
板との濡れ性を確保するために活性金属を副成分とした
ものが好ましい。活性金属成分は、セラミックス基板と
反応して複合酸化物や複合窒化物等の化合物を生成し、
ろう材とセラミックス基板との結合を強固なものにす
る。活性金属の具体例をあげれば、チタン、ジルコニウ
ム、ハフニウム、ニオブ、タンタル、バナジウムやこれ
らの化合物である。本発明におけるこれらの比率として
は、重量割合で、銀６０〜１００部、銅０〜４０部の合
計量１００部あたり、活性金属１〜３０部である。The metal component of the brazing filler metal in the active metal brazing method is preferably one containing silver and copper as main components, and using an active metal as a subcomponent in order to ensure wettability with the ceramic substrate during melting. The active metal component reacts with the ceramic substrate to generate compounds such as composite oxides and composite nitrides,
Strengthens the bond between the brazing material and the ceramic substrate. Specific examples of the active metal include titanium, zirconium, hafnium, niobium, tantalum, vanadium, and compounds thereof. The ratio of these in the present invention is 1 to 30 parts of active metal per 100 parts of the total amount of 60 to 100 parts of silver and 0 to 40 parts of copper by weight.
【００１９】接合温度としては７８０〜８３０℃が好ま
しく、保持時間は２０〜６０分が望ましい。温度が低
く、保持時間が短すぎる場合には、接合が不十分であ
り、逆に高温で保持時間が長すぎる場合には、金属板へ
のろう材成分の拡散が多すぎて金属板が硬くなり、耐ヒ
ートサイクル性が低下する。The bonding temperature is preferably 780-830 ° C., and the holding time is preferably 20-60 minutes. When the temperature is low and the holding time is too short, the bonding is insufficient.On the other hand, when the holding time is too high and the holding time is too long, the diffusion of the brazing material component into the metal plate is too much and the metal plate is hard. And the heat cycle resistance decreases.
【００２０】[0020]
【実施例】以下、本発明を実施例と比較例をあげて具体
的に説明する。The present invention will be specifically described below with reference to examples and comparative examples.
【００２１】実施例１〜３ 重量割合で、Ａｇ粉末９０部、Ｃｕ粉末１０部、ＴｉＨ
2粉末３部、Ｚｒ粉末３部にテルピネオール１５部を配
合し、ポリイソブチルメタアクリレートのテルピネオー
ル溶液を加えて混練し、ろう材ペースト１を調製した。
また、同様に、Ａｇ粉末８５部、Ｃｕ粉末１５部、Ｔｉ
Ｈ2粉末３部、Ｚｒ粉末３部にテルピネオール１５部を
配合し、ポリイソブチルメタアクリレートのテルピネオ
ール溶液を加えて混練し、ろう材ペースト２を調製し
た。窒化アルミニウム基板（サイズ：６０ｍｍ×３６ｍ
ｍ×０．６５ｍｍ 曲げ強さ：４０ｋｇ／ｍｍ2 熱伝
導率：１３５Ｗ／ｍＫ）の銅回路形成面にペースト１
を、放熱銅板形成面にペースト２をそれぞれスクリーン
印刷によって回路パターン状に塗布した。その際の塗布
量（乾燥後）は９ｍｇ／ｃｍ2 とした。Examples 1 to 3 90 parts by weight of Ag powder, 10 parts of Cu powder, TiH
(2) 3 parts of powder and 3 parts of Zr powder were mixed with 15 parts of terpineol, and a terpineol solution of polyisobutyl methacrylate was added and kneaded to prepare a brazing material paste 1.
Similarly, 85 parts of Ag powder, 15 parts of Cu powder,
3 parts of H 2 powder and 3 parts of Zr powder were mixed with 15 parts of terpineol, and a terpineol solution of polyisobutyl methacrylate was added and kneaded to prepare a brazing filler metal paste 2. Aluminum nitride substrate (size: 60 mm x 36 m
m × 0.65 mm Flexural strength: 40 kg / mm 2 thermal conductivity: 135 W / mK) paste copper circuit forming surface of the 1
Was applied in the form of a circuit pattern on the surface of the heat-dissipating copper plate by screen printing. The coating amount (after drying) at that time was 9 mg / cm 2 .
【００２２】次に、窒化アルミニウム基板の銅回路形成
面に、５６ｍｍ×３２ｍｍ×０．３ｍｍの銅回路パター
ンを、また放熱銅板形成面に５６ｍｍ×３２ｍｍ×０．
１５ｍｍの放熱銅板のパターンを接触配置してから、真
空度１×１０-5Ｔｏｒｒ以下の真空下、表１で示される
条件で加熱した後、６００℃まで急冷し、その後２℃／
分の降温速度で冷却して回路基板を作成した。Next, a copper circuit pattern of 56 mm × 32 mm × 0.3 mm was formed on the copper circuit forming surface of the aluminum nitride substrate, and a 56 mm × 32 mm × 0.
After the pattern of the heat-dissipating copper plate of 15 mm was arranged in contact with the pattern, the layer was heated under the conditions shown in Table 1 under a vacuum of 1 × 10 −5 Torr or less, rapidly cooled to 600 ° C., and then cooled to 2 ° C. /
The circuit board was prepared by cooling at a temperature lowering rate of 1 minute.
【００２３】比較例１ 窒化アルミニウム基板の両面にペースト１を塗布したこ
と以外は実施例１と同様にして回路基板を作成した。Comparative Example 1 A circuit board was prepared in the same manner as in Example 1 except that paste 1 was applied to both surfaces of an aluminum nitride substrate.
【００２４】比較例２ 放熱銅板の厚みを０．３０ｍｍとしたこと以外は実施例
１と同様にして回路基板を作成した。Comparative Example 2 A circuit board was prepared in the same manner as in Example 1 except that the thickness of the heat-dissipating copper plate was 0.30 mm.
【００２５】これら一連の処理を経て製作された回路基
板について、空気中、３５０℃×５分、２５℃×５分を
１サイクルとする通炉試験を５回行い、回路基板のＪＩ
ＳＢ ０６２１に従う平面度及び抗折強度を測定した。
また、耐ヒートサイクル性を評価するため、空気中、−
４０℃×３０分保持後、２５℃×１０分放置、更に１２
５℃×３０分保持後、２５℃×１０分放置を１サイクル
とした耐久性試験を行い、銅回路又は放熱銅板が剥離開
始したサイクル数を測定した。更には、銅回路及び放熱
銅板に固体拡散しているＡｇ層の厚みを特開平１０−１
４５０３９号公報に示されている方法に従い、任意の５
箇所で測定しその値を平均した。それらの結果を表１に
示す。The circuit board manufactured through these series of processes was subjected to a furnace test in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle, and the circuit board was subjected to JI five times.
The flatness and bending strength according to SB 0621 were measured.
In addition, in order to evaluate heat cycle resistance, in air,-
After holding at 40 ° C. × 30 minutes, leave at 25 ° C. × 10 minutes, and further 12
After holding at 5 ° C. × 30 minutes, a durability test was performed with one cycle of standing at 25 ° C. × 10 minutes, and the number of cycles at which the copper circuit or the heat-dissipating copper plate started peeling was measured. Further, the thickness of the Ag layer which is solid-dispersed in the copper circuit and the heat-dissipating copper plate is adjusted according to
According to the method disclosed in Japanese Patent No. 45039,
It measured at the point and averaged the value. Table 1 shows the results.
【００２６】[0026]
【表１】 [Table 1]
【００２７】[0027]
【発明の効果】本発明によれば、熱履歴後の反りが少な
く、かつヒートサイクル性に優れた高信頼性の回路基板
が提供される。According to the present invention, there is provided a highly reliable circuit board which is less warped after heat history and has excellent heat cycle properties.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 辻村 好彦 福岡県大牟田市新開町１ 電気化学工業株 式会社大牟田工場内 (72)発明者 寺野 克典 福岡県大牟田市新開町１ 電気化学工業株 式会社大牟田工場内 Ｆターム(参考） 5E338 AA18 CC08 CD01 EE02 EE26 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshihiko Tsujimura 1 Shinkaicho, Omuta-shi, Fukuoka Denki Kagaku Kogyo Co., Ltd. Inside the Omuta plant (72) Inventor Katsunori Terano 1 Shinkaicho, Omuta-shi Fukuoka 1 Denki Kagaku Kogyo Co., Ltd. F-term in Omuta factory (reference) 5E338 AA18 CC08 CD01 EE02 EE26
Claims (2)
他方の面に放熱銅板が、それぞれＡｇ成分と活性金属成
分を含むろう材を用いて接合されてなるものにおいて、
放熱銅板側へ固体拡散しているＡｇ層の厚みが銅回路側
よりも１０μｍ以上厚くなっていることを特徴とする回
路基板。A copper circuit is provided on one side of a ceramic substrate,
In the case where a heat-dissipating copper plate is joined to the other surface using a brazing material containing an Ag component and an active metal component,
A circuit board, characterized in that the thickness of the Ag layer solid-dispersed to the heat-dissipating copper plate side is at least 10 μm thicker than the copper circuit side.
他方の面に放熱銅板が形成されてなるものにおいて、銅
回路に対する放熱銅板の体積率が３０〜９０％であり、
空気中で３５０℃×５分、２５℃×５分を１サイクルと
する通炉試験を５回行った後のＪＩＳ Ｂ ０６２１に
従う平面度が１００μｍ以下であることを特徴とする回
路基板。2. A copper circuit on one side of a ceramic substrate,
A heat radiation copper plate formed on the other surface, wherein the volume ratio of the heat radiation copper plate to the copper circuit is 30 to 90%;
A circuit board having a flatness of 100 μm or less according to JIS B 0621 after performing a furnace test five times in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10201859A JP2000031609A (en) | 1998-07-16 | 1998-07-16 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10201859A JP2000031609A (en) | 1998-07-16 | 1998-07-16 | Circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000031609A true JP2000031609A (en) | 2000-01-28 |
Family
ID=16448080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10201859A Pending JP2000031609A (en) | 1998-07-16 | 1998-07-16 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000031609A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013115359A1 (en) * | 2012-02-01 | 2013-08-08 | 三菱マテリアル株式会社 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| CN106312361A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate and copper clad foil low-temperature connecting soldering paste and production process thereof |
| CN106312220A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate copper cladding low-temperature connection method for power module |
| CN109648221A (en) * | 2018-11-29 | 2019-04-19 | 中国科学院电工研究所 | A kind of soldering electric slurry and its preparation method and application |
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|---|---|---|---|---|
| JPS63248195A (en) * | 1987-04-03 | 1988-10-14 | 株式会社日本製鋼所 | metal-clad ceramic substrate |
| JPH05327139A (en) * | 1992-05-20 | 1993-12-10 | Kawasaki Steel Corp | Copper plate bonded alumina substrate |
| JPH10145039A (en) * | 1996-11-12 | 1998-05-29 | Denki Kagaku Kogyo Kk | Printed circuit board and evaluation and manufacture thereof |
-
1998
- 1998-07-16 JP JP10201859A patent/JP2000031609A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63248195A (en) * | 1987-04-03 | 1988-10-14 | 株式会社日本製鋼所 | metal-clad ceramic substrate |
| JPH05327139A (en) * | 1992-05-20 | 1993-12-10 | Kawasaki Steel Corp | Copper plate bonded alumina substrate |
| JPH10145039A (en) * | 1996-11-12 | 1998-05-29 | Denki Kagaku Kogyo Kk | Printed circuit board and evaluation and manufacture thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013115359A1 (en) * | 2012-02-01 | 2013-08-08 | 三菱マテリアル株式会社 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| CN104067386A (en) * | 2012-02-01 | 2014-09-24 | 三菱综合材料株式会社 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| US9504144B2 (en) | 2012-02-01 | 2016-11-22 | Mitsubishi Materials Corporation | Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste |
| US10375825B2 (en) | 2012-02-01 | 2019-08-06 | Mitsubishi Materials Corporation | Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste |
| CN106312361A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate and copper clad foil low-temperature connecting soldering paste and production process thereof |
| CN106312220A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate copper cladding low-temperature connection method for power module |
| CN109648221A (en) * | 2018-11-29 | 2019-04-19 | 中国科学院电工研究所 | A kind of soldering electric slurry and its preparation method and application |
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