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JP2000012594A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JP2000012594A
JP2000012594A JP17292898A JP17292898A JP2000012594A JP 2000012594 A JP2000012594 A JP 2000012594A JP 17292898 A JP17292898 A JP 17292898A JP 17292898 A JP17292898 A JP 17292898A JP 2000012594 A JP2000012594 A JP 2000012594A
Authority
JP
Japan
Prior art keywords
bonding
wiring board
adhesive
case
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17292898A
Other languages
Japanese (ja)
Other versions
JP3726498B2 (en
Inventor
Hirokazu Imai
今井　　博和
Takashi Nagasaka
長坂　　崇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP17292898A priority Critical patent/JP3726498B2/en
Publication of JP2000012594A publication Critical patent/JP2000012594A/en
Application granted granted Critical
Publication of JP3726498B2 publication Critical patent/JP3726498B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make bonding strength of wire bonding sufficiently large and reduce the number of working process. SOLUTION: In this manufacturing method of a semiconductor device, after a bonding process which bonds a wiring board 1 to a case 6 via adhesive agent 7 is executed, before the adhesive agent 7 is cured, a bonding process for wire- bonding the wiring board 1 to the case 6 is executed, and a curing process for curing the adhesive agent 7 is executed. By the above method, wire bonding can be executed in a state that the wiring board 1 and bonding lands 2a, 9a of the case 6 are not oxidized and contaminated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、基板を基板支持部
材に接着した状態で、両者をワイヤボンディングして構
成された半導体装置の製造方法及び半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device in which a substrate is bonded to a substrate supporting member and both are bonded by wire bonding.

【０００２】[0002]

【従来の技術】例えば複数の半導体チップを搭載した配
線基板をケース内に収容する場合、まず、配線基板をケ
ースの内底部に接着剤を介して接着する。続いて、この
接着した配線基板及びケースを加熱することにより、上
記接着剤を硬化させる。そして、配線基板上に設けられ
たボンディングランドと、ケース上に設けられたボンデ
ィングランドとの間をワイヤボンディングすることによ
り接続するように構成されている。2. Description of the Related Art For example, when a wiring board on which a plurality of semiconductor chips are mounted is housed in a case, first, the wiring board is bonded to the inner bottom of the case via an adhesive. Subsequently, the adhesive is cured by heating the bonded wiring board and the case. The bonding lands provided on the wiring board and the bonding lands provided on the case are connected by wire bonding.

【０００３】ここで、ボンディングランドは、例えばＣ
ｕで形成されているため、上記接着剤を加熱硬化すると
きに、その表面が酸化・汚染されてしまう。ボンディン
グランドが酸化・汚染されたままで、ワイヤボンディン
グを行うと、ボンディング強度（接合強度）が不足する
という不具合がある。このため、従来構成においては、
接着剤を加熱硬化する工程を行った後、ボンディングラ
ンド上の酸化膜や汚染物を例えばプラズマクリーニング
により除去する工程を実行してから、ワイヤボンディン
グを行うようにしていた。また、他の対策として、接着
剤を硬化する工程を行う前に、ボンディングランド上に
ストリップマスクを塗布しておくという方法もあった。
この方法の場合、接着剤を硬化する工程を行った後、ス
トリップマスクを除去する工程を実行してから、ワイヤ
ボンディングを行う。Here, the bonding land is, for example, C
Since the adhesive is formed by heating, the surface thereof is oxidized and contaminated when the adhesive is cured by heating. If wire bonding is performed while the bonding land is oxidized and contaminated, there is a problem that the bonding strength (bonding strength) is insufficient. For this reason, in the conventional configuration,
After performing a step of heating and curing the adhesive, a step of removing an oxide film and contaminants on the bonding lands by, for example, plasma cleaning is performed, and then wire bonding is performed. As another countermeasure, there is also a method of applying a strip mask on a bonding land before performing a step of curing an adhesive.
In this method, after the step of curing the adhesive is performed, the step of removing the strip mask is performed, and then the wire bonding is performed.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、上記従
来構成の各方法の場合、作業工程数が増えるという欠点
があった。また、ボンディングランド上の酸化膜や汚染
物をプラズマクリーニングにより除去する方法の場合、
酸化膜や汚染物を完全に除去することは困難であった。
更に、ボンディングランド上にストリップマスクを塗布
しておく方法の場合、硬化時間の長い接着剤や硬化温度
の高い接着剤を使用すると、ボンディングランドの酸化
・汚染を回避することが困難であった。However, each of the conventional methods has a disadvantage that the number of working steps is increased. In the case of a method of removing oxide films and contaminants on the bonding lands by plasma cleaning,
It was difficult to completely remove oxide films and contaminants.
Further, in the case of applying a strip mask on the bonding lands, it is difficult to avoid oxidation and contamination of the bonding lands if an adhesive having a long curing time or an adhesive having a high curing temperature is used.

【０００５】一方、ボンディングランドの酸化を防止す
る方法として、Ｎ２等低酸素濃度の雰囲気または還元雰
囲気において接着剤を硬化させる方法がある。しかし、
この方法の場合、接着剤等から発生するアウトガスや硬
化炉内の汚染物がボンディングランドに付着してしまう
という欠点があった。On the other hand, as a method for preventing the oxidation of the bonding land, there is a method of curing the adhesive in an atmosphere having a low oxygen concentration such as N 2 or a reducing atmosphere. But,
In the case of this method, there is a disadvantage that outgas generated from the adhesive or the like and contaminants in the curing furnace adhere to the bonding lands.

【０００６】そこで、本発明の目的は、ワイヤボンディ
ングのボンディング強度を十分強くすることができ、し
かも、作業工程数を低減することができる半導体装置の
製造方法及び半導体装置を提供することにある。An object of the present invention is to provide a method of manufacturing a semiconductor device and a semiconductor device capable of sufficiently increasing the bonding strength of wire bonding and reducing the number of work steps.

【０００７】[0007]

【課題を解決するための手段】請求項１の発明によれ
ば、基板を基板支持部材に接着剤を介して接着した後、
接着剤を硬化させる前に、基板と基板支持部材との間を
ワイヤボンディングし、この後、接着剤を硬化させるよ
うに構成したので、ボンディングランドが酸化・汚染さ
れない状態で、ワイヤボンディングを実行することがで
きる。このため、ボンディング強度が十分強くなると共
に、クリーニング工程やマスク工程等の作業工程を不要
にすることができる。According to the first aspect of the present invention, after the substrate is bonded to the substrate supporting member via an adhesive,
Before the adhesive is cured, wire bonding is performed between the substrate and the substrate supporting member, and thereafter, the adhesive is cured, so that the wire bonding is performed in a state where the bonding lands are not oxidized and contaminated. be able to. For this reason, the bonding strength can be sufficiently increased, and work steps such as a cleaning step and a mask step can be eliminated.

【０００８】請求項２の発明によれば、配線基板をケー
スに接着して両者の間をワイヤボンディングする構成に
適用することができる。また、請求項３の発明によれ
ば、半導体チップを配線基板に接着して両者の間をワイ
ヤボンディングする構成に適用することができる。そし
て、請求項４の半導体装置は、請求項１記載の半導体装
置の製造方法によって製造されたものであるから、ワイ
ヤボンディングのボンディング強度が十分強くなると共
に、作業工程数が少なくなり、ひいては製造コストが安
くなる。According to the second aspect of the present invention, the present invention can be applied to a configuration in which a wiring board is bonded to a case and wire bonding is performed between the two. According to the third aspect of the present invention, the present invention can be applied to a configuration in which a semiconductor chip is bonded to a wiring board and wire bonding is performed between the two. Since the semiconductor device according to the fourth aspect is manufactured by the method for manufacturing a semiconductor device according to the first aspect, the bonding strength of wire bonding is sufficiently increased, the number of working steps is reduced, and the manufacturing cost is reduced. Is cheaper.

【０００９】[0009]

【発明の実施の形態】以下、本発明の第１の実施例につ
いて図１ないし図３を参照しながら説明する。まず、本
実施例で使用する配線基板１について、図１（ａ）及び
（ｂ）に従って説明する。この配線基板１は、プリント
配線基板やセラミック基板等から構成されており、その
上面には、図１（ａ）に示すように、導体パターン２が
予め形成されている。そして、配線基板１の上面には、
図１（ｂ）に示すように、各種の半導体チップ３や種々
の部品（図示しない）が次に述べるようにして搭載され
ている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. First, a wiring board 1 used in the present embodiment will be described with reference to FIGS. The wiring board 1 is composed of a printed wiring board, a ceramic substrate, or the like, and has a conductor pattern 2 formed on the upper surface thereof in advance, as shown in FIG. Then, on the upper surface of the wiring board 1,
As shown in FIG. 1B, various semiconductor chips 3 and various components (not shown) are mounted as described below.

【００１０】即ち、配線基板１の導体パターン２の上に
例えばＡｇペースト４を塗布する。続いて、各種の半導
体チップ３や種々の部品を、上記Ａｇペースト４の上に
載置することにより配線基板１の上面に貼り付ける。そ
して、Ａｇペースト４が硬化したら、半導体チップ３と
配線基板１の導体パターン２との間をワイヤボンディン
グして接続する。この場合、例えばＡｕ線５を用いてワ
イヤボンディングを行っている。That is, for example, an Ag paste 4 is applied on the conductor pattern 2 of the wiring board 1. Subsequently, various semiconductor chips 3 and various components are attached to the upper surface of the wiring board 1 by placing them on the Ag paste 4. When the Ag paste 4 is cured, the semiconductor chip 3 and the conductor pattern 2 of the wiring board 1 are connected by wire bonding. In this case, for example, wire bonding is performed using the Au wire 5.

【００１１】次に、このような構成の配線基板１を、基
板支持部材である例えばケース６内に収容して固定する
作業工程について、図１（ｃ）、（ｄ）、（ｅ）を参照
して説明する。まず、図１（ｃ）に示すように、配線基
板１をケース６の内底面に接着剤７を介して接着する接
着工程を実行する。本実施例の場合、接着剤７として、
例えばシリコーンゴム接着剤（具体的には、東レシリコ
ーン製のＣＹ５２−２２３Ａ／Ｂ；付加反応型（２液
型）シリコーンゴム）を使用した。また、接着剤７の厚
み寸法は例えば約２００μｍに設定した。Next, with reference to FIGS. 1 (c), 1 (d) and 1 (e), a description will be given of a work process for accommodating and fixing the wiring board 1 having such a structure, for example, in a case 6 which is a board supporting member. I will explain. First, as shown in FIG. 1C, a bonding step of bonding the wiring board 1 to the inner bottom surface of the case 6 via an adhesive 7 is performed. In the case of this embodiment, as the adhesive 7
For example, a silicone rubber adhesive (specifically, CY52-223A / B manufactured by Toray Silicone; an addition reaction type (two-pack type) silicone rubber) was used. The thickness of the adhesive 7 is set to, for example, about 200 μm.

【００１２】続いて、図１（ｄ）に示すように、上記接
着剤７を硬化させる前の状態（未硬化状態）で、配線基
板１とケース６との間をワイヤボンディングするボンデ
ィング工程を実行する。この場合、例えばアルミ線８を
用いてワイヤボンディング（例えば超音波によるワイヤ
ボンディング）を行っている。そして、配線基板１の上
面の右端部に設けられた導体パターン２であるボンディ
ングランド２ａと、ケース６の内底部の右端部の段部６
ａに設けられた導体パターン９であるボンディングラン
ド９ａとを、上記アルミ線８でワイヤボンディングして
いる。ここで、接着剤７が硬化していない状態で、ワイ
ヤボンディングを行うと、配線基板１が位置ずれを起こ
すような感じがするが、実際には位置ずれが生じなかっ
た。Subsequently, as shown in FIG. 1D, a bonding step of performing wire bonding between the wiring board 1 and the case 6 is performed before the adhesive 7 is cured (uncured state). I do. In this case, wire bonding (for example, wire bonding by ultrasonic waves) is performed using, for example, an aluminum wire 8. The bonding land 2a, which is the conductor pattern 2 provided on the right end of the upper surface of the wiring board 1, and the step 6 on the right end of the inner bottom of the case 6
The wire is bonded to the bonding land 9a, which is the conductor pattern 9 provided on a, by the aluminum wire 8. Here, when wire bonding is performed in a state where the adhesive 7 has not been cured, the wiring board 1 seems to be displaced, but no dislocation actually occurred.

【００１３】上記配線基板１の位置ずれが生じなかった
理由としては、ワイヤボンディング時に、配線基板１に
作用する横向きの力が非常に弱い力であるのに対して、
接着剤７が未硬化であっても、配線基板１とケース６と
を接着する力がかなり強い力であるためである。この接
着する力がかなり強い理由は、配線基板１の下面全体と
ケース６の内底面とが接着剤７を介して面で接着されて
いるためである。尚、ワイヤボンディング時に配線基板
１に作用する横向きの力は、配線基板１側のボンディン
グランド２ａにアルミ線８を接続した後、アルミ線８を
引き出すときに生じたり、また、ランド２ａ、９ａにア
ルミ線８を接続した後、アルミ線８を切断したりすると
きに生ずる力であり、非常に弱い。そして、本実施例に
おいては、外径寸法が例えば２５０μｍのアルミ線を用
いて、超音波ワイヤボンディングを実行したが、配線基
板１は全く位置ずれしなかった。The reason why the displacement of the wiring board 1 did not occur is that the lateral force acting on the wiring board 1 during wire bonding is very weak,
This is because, even when the adhesive 7 is not cured, the force for bonding the wiring board 1 and the case 6 is a very strong force. The reason why the bonding force is so strong is that the entire lower surface of the wiring board 1 and the inner bottom surface of the case 6 are bonded to each other via the adhesive 7. The lateral force acting on the wiring board 1 at the time of wire bonding occurs when the aluminum wire 8 is connected to the bonding land 2a on the wiring board 1 side and then the aluminum wire 8 is pulled out, or the lateral force acts on the lands 2a and 9a. This force is generated when the aluminum wire 8 is cut after the aluminum wire 8 is connected, and is very weak. In the present embodiment, ultrasonic wire bonding was performed using an aluminum wire having an outer diameter of, for example, 250 μm, but the wiring board 1 did not shift at all.

【００１４】さて、上記ワイヤボンディング工程を実行
した後は、接着剤７を硬化させる工程を実行する。この
場合、周知構成の硬化炉や加熱高温槽等を用いて上記ケ
ース６及び配線基板１を加熱することにより、接着剤７
を硬化させるように構成されている。これにより、配線
基板１をケース６に取り付ける作業が完了する。After performing the wire bonding step, a step of curing the adhesive 7 is performed. In this case, the case 6 and the wiring board 1 are heated using a curing furnace, a heating high-temperature bath, or the like having a well-known configuration, so that the adhesive 7
Is configured to be cured. Thus, the operation of attaching the wiring board 1 to the case 6 is completed.

【００１５】このような構成の本実施例によれば、配線
基板１をケース６に取り付けるに当たって、配線基板１
をケース６に接着剤７を介して接着した後、接着剤７の
未硬化状態で、配線基板１とケース６との間をワイヤボ
ンディングした。そしてこの後、接着剤７を加熱硬化さ
せるように構成した。この構成の場合、配線基板１及び
ケース６の各ボンディングランド２ａ及び９ａが酸化・
汚染される前のきれいな状態で、ワイヤボンディングを
実行することができる。このため、ワイヤボンディング
のボンディング強度（接合強度）を十分強くすることが
できる。そして、このようにボンディング強度が強くな
ると、ワイヤボンディングのパワーを低下させても、十
分なボンディング強度を容易に得ることができる。ま
た、本実施例では、従来構成において必要としたクリー
ニング工程やマスク工程等の作業工程が不要になる。こ
のため、作業工程数を低減することができる。According to this embodiment having such a configuration, when the wiring board 1 is mounted on the case 6,
Was bonded to the case 6 via the adhesive 7, and then the wire bonding was performed between the wiring board 1 and the case 6 in an uncured state of the adhesive 7. Thereafter, the adhesive 7 was cured by heating. In this configuration, the bonding lands 2a and 9a of the wiring board 1 and the case 6 are oxidized and
Wire bonding can be performed in a clean state before contamination. Therefore, the bonding strength (bonding strength) of the wire bonding can be sufficiently increased. When the bonding strength is increased, a sufficient bonding strength can be easily obtained even if the power of wire bonding is reduced. Further, in the present embodiment, operation steps such as a cleaning step and a mask step which are required in the conventional configuration become unnecessary. For this reason, the number of working steps can be reduced.

【００１６】ここで、本実施例のアルミ線８のボンディ
ング強度、具体的には、アルミ線８をボンディングした
部分の引っ張り強度を調べた結果を、図２に示す。この
図２において、右側のデータは、比較例のアルミ線のボ
ンディング強度を調べた結果である。この比較例は、配
線基板をケースに接着剤を介して接着した後、硬化炉に
より接着剤を加熱硬化させ、その後、配線基板とケース
との間をワイヤボンディングした例である。この図２か
ら、本実施例の場合のボンディング強度が十分強くなっ
たことがわかる。FIG. 2 shows the result of examining the bonding strength of the aluminum wire 8 of this embodiment, specifically, the tensile strength of the portion where the aluminum wire 8 is bonded. In FIG. 2, the data on the right side is the result of examining the bonding strength of the aluminum wire of the comparative example. This comparative example is an example in which a wiring board is bonded to a case via an adhesive, and then the adhesive is heated and cured in a curing furnace, and thereafter, wire bonding is performed between the wiring board and the case. From FIG. 2, it can be seen that the bonding strength in the case of the present embodiment was sufficiently increased.

【００１７】尚、ボンディング強度を調べるに当たって
は、図３に示すような構造にして、引っ張り強度の試験
を行った。即ち、図３に示すように、基板載せ台である
治具１０の上面にケース６を両面粘着テープ１１を介し
て接着固定した。また、比較例とクリーニング工程を行
う従来構成との違いは、従来構成においては、ワイヤボ
ンディングを行う前に、ボンディングランド上の酸化膜
や汚染物を除去するクリーニング工程を行った点であ
る。そして、クリーニング工程を行っても酸化膜や汚染
物を完全には除去できないため、従来構成の場合のボン
ディング強度は、比較例よりも多少良くなる程度であ
る。In examining the bonding strength, a structure as shown in FIG. 3 was used and a tensile strength test was performed. That is, as shown in FIG. 3, the case 6 was bonded and fixed to the upper surface of a jig 10 as a substrate mounting table via a double-sided adhesive tape 11. Further, the difference between the comparative example and the conventional configuration in which the cleaning step is performed is that in the conventional configuration, a cleaning step for removing an oxide film and a contaminant on a bonding land is performed before performing wire bonding. Since the oxide film and the contaminants cannot be completely removed even when the cleaning step is performed, the bonding strength in the case of the conventional configuration is only slightly improved as compared with the comparative example.

【００１８】また、上記実施例では、ワイヤボンディン
グを実行するときに、アルミ線８を用いたが、これに代
えて、Ａｕ線等を用いても良い。更に、上記実施例で
は、超音波を用いたワイヤボンディングに適用したが、
超音波及び熱を用いたワイヤボンディングに適用しても
良いし、また、熱を用いたワイヤボンディングに適用し
ても良い。Further, in the above embodiment, the aluminum wire 8 is used when performing the wire bonding, but an Au wire or the like may be used instead. Furthermore, in the above embodiment, the present invention is applied to wire bonding using ultrasonic waves.
The present invention may be applied to wire bonding using ultrasonic waves and heat, or may be applied to wire bonding using heat.

【００１９】更にまた、上記実施例では、配線基板１を
ケース６に取り付ける構成に適用したが、これに限られ
るものではなく、半導体チップを配線基板に取り付ける
構成に適用しても良い。具体的には、半導体チップを配
線基板に接着する接着剤として、例えば前述したシリコ
ーンゴム系の接着剤を使用する場合、接着剤を加熱硬化
するときに、ボンディングランドが酸化・汚染される。
このため、上記実施例とほぼ同様にして、半導体チップ
を配線基板に接着した後、接着剤を硬化させる前の状態
で半導体チップと配線基板との間をワイヤボンディング
し、この後、接着剤を硬化させるように構成することが
好ましい。Furthermore, in the above-described embodiment, the present invention is applied to the configuration in which the wiring board 1 is mounted on the case 6, but the present invention is not limited to this, and may be applied to a configuration in which a semiconductor chip is mounted on the wiring board. Specifically, for example, when the above-mentioned silicone rubber-based adhesive is used as the adhesive for bonding the semiconductor chip to the wiring board, the bonding lands are oxidized and contaminated when the adhesive is cured by heating.
For this reason, in substantially the same manner as in the above embodiment, after bonding the semiconductor chip to the wiring board, wire bonding is performed between the semiconductor chip and the wiring board in a state before the adhesive is cured, and then the adhesive is applied. It is preferred to be configured to cure.

【００２０】さて、上述したように、配線基板１をケー
ス６に接着した接着剤７が硬化していない状態で、ワイ
ヤボンディングを行うと、配線基板１が位置ずれを起こ
す可能性がある。例えば、使用するワイヤが太くて、ワ
イヤボンディング時に配線基板１に対して大きな横向き
の力が作用するような場合や、未硬化状態の接着剤の接
着力が非常に弱い接着剤を使用しなければならない場合
などが考えられる。このような場合には、図４に示す第
２の実施例または図５に示す第３の実施例のように構成
すれば、配線基板１の位置ずれを防止することができ
る。以下、これら第２及び第３の実施例について順に説
明する。As described above, if the wire bonding is performed in a state where the adhesive 7 for bonding the wiring board 1 to the case 6 is not cured, the wiring board 1 may be displaced. For example, if the wire to be used is thick and a large lateral force acts on the wiring board 1 during wire bonding, or if the adhesive in the uncured state has an extremely weak adhesive force, it must be used. This is not the case. In such a case, if the configuration is made like the second embodiment shown in FIG. 4 or the third embodiment shown in FIG. 5, the displacement of the wiring board 1 can be prevented. Hereinafter, the second and third embodiments will be described in order.

【００２１】まず、第２の実施例では、図４に示すよう
に、ケース６を載置固定する治具１２に、配線基板１を
押さえ付ける押さえ部材１３を回動支点１４の回りに回
動可能に設けた。そして、配線基板１を押さえなくても
良いときは、押さえ部材１３を図４中２点鎖線で示す位
置に回動させておく。これに対して、配線基板１をケー
ス６に接着した接着剤７が硬化していない状態で、ワイ
ヤボンディングを行うときは、押さえ部材１３を図４中
実線で示す位置に回動させる。これにより、該押さえ部
材１３によって配線基板１を押さえ付けることが可能な
構成となっている。この結果、ワイヤボンディングを行
なったときに、配線基板１が位置ずれすることを確実に
防止できる。First, in the second embodiment, as shown in FIG. 4, a holding member 13 for holding the wiring board 1 is turned around a turning fulcrum 14 by a jig 12 for placing and fixing the case 6. Provided as possible. When it is not necessary to hold down the wiring board 1, the holding member 13 is rotated to a position shown by a two-dot chain line in FIG. On the other hand, when wire bonding is performed in a state in which the adhesive 7 that bonds the wiring board 1 to the case 6 is not cured, the pressing member 13 is rotated to the position indicated by the solid line in FIG. Thus, the configuration is such that the wiring board 1 can be pressed by the pressing member 13. As a result, it is possible to reliably prevent the wiring board 1 from being displaced when wire bonding is performed.

【００２２】尚、上述した以外の第２の実施例の構成
は、第１の実施例の構成と同じ構成となっている。従っ
て、第２の実施例においても、第１の実施例と同様な作
用効果を得ることができる。The configuration of the second embodiment other than the above is the same as the configuration of the first embodiment. Therefore, also in the second embodiment, the same operation and effect as those of the first embodiment can be obtained.

【００２３】次に、第３の実施例では、図５に示すよう
に、ワイヤボンダー１５のヘッド部１６に、配線基板１
を押さえ付ける押さえ部材１７を設けた。この構成の場
合、ワイヤボンディングを行うときには、図５に示すよ
うに、ワイヤボンダー１５の押さえ部材１７が配線基板
１を押さえ付けるように構成されている。これにより、
ワイヤボンディングを行なったときに、配線基板１が位
置ずれすることを確実に防止できる。尚、上述した以外
の第３の実施例の構成は、第１の実施例または第２の実
施例の構成と同じ構成となっている。Next, in the third embodiment, as shown in FIG.
Is provided. In the case of this configuration, when performing wire bonding, as shown in FIG. 5, the pressing member 17 of the wire bonder 15 is configured to press the wiring board 1. This allows
When the wire bonding is performed, the displacement of the wiring board 1 can be reliably prevented. The configuration of the third embodiment other than the above is the same as the configuration of the first or second embodiment.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施例を示すものであり、製造
工程を示す図FIG. 1 is a view showing a first embodiment of the present invention and showing a manufacturing process.

【図２】ワイヤボンディングの引っ張り強度の試験結果
を示す図FIG. 2 is a diagram showing a test result of tensile strength of wire bonding.

【図３】引っ張り強度の試験を行なったときの構成を示
す図FIG. 3 is a diagram showing a configuration when a tensile strength test is performed.

【図４】本発明の第２の実施例を示す縦断側面図FIG. 4 is a longitudinal sectional side view showing a second embodiment of the present invention.

【図５】本発明の第３の実施例を示す図４相当図FIG. 5 is a view corresponding to FIG. 4, showing a third embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１は配線基板、２は導体パターン、２ａはボンディング
ランド、３は半導体チップ、６はケース（基板支持部
材）、７は接着剤、８はアルミ線、９は導体パターン、
９ａはボンディングランド、１３は押さえ部材、１５は
ワイヤボンダー、１７は押さえ部材を示す。1 is a wiring board, 2 is a conductor pattern, 2a is a bonding land, 3 is a semiconductor chip, 6 is a case (substrate support member), 7 is an adhesive, 8 is an aluminum wire, 9 is a conductor pattern,
9a is a bonding land, 13 is a pressing member, 15 is a wire bonder, and 17 is a pressing member.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 配線基板や半導体基板等からなる基板
と、この基板を載置支持する基板支持部材とを備え、前
記基板を前記基板支持部材に接着した状態で、両者をワ
イヤボンディングして成る半導体装置の製造方法におい
て、 前記基板を前記基板支持部材に接着剤を介して接着する
接着工程と、 この接着工程を実行した後、前記接着剤を硬化させる前
に、前記基板と前記基板支持部材との間をワイヤボンデ
ィングするボンディング工程と、 このボンディング工程を実行した後、前記接着剤を硬化
させる硬化工程とを備えたことを特徴とする半導体装置
の製造方法。1. A substrate comprising a wiring substrate, a semiconductor substrate, and the like, and a substrate supporting member for mounting and supporting the substrate, wherein the substrate is bonded to the substrate supporting member and both are wire-bonded. In the method for manufacturing a semiconductor device, a bonding step of bonding the substrate to the substrate supporting member via an adhesive; and after performing the bonding step, before the adhesive is cured, the substrate and the substrate supporting member. And a curing step of curing the adhesive after performing the bonding step. 【請求項２】 前記基板を、配線基板により構成すると
共に、 前記基板支持部材を、前記配線基板を収容するケースに
より構成したことを特徴とする請求項１記載の半導体装
置の製造方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein said substrate is formed of a wiring board, and said substrate support member is formed of a case for housing said wiring board. 【請求項３】 前記基板を、半導体チップにより構成す
ると共に、 前記基板支持部材を、前記半導体チップを搭載する配線
基板により構成したことを特徴とする請求項１記載の半
導体装置の製造方法。3. The method according to claim 1, wherein the substrate is formed of a semiconductor chip, and the substrate support member is formed of a wiring board on which the semiconductor chip is mounted. 【請求項４】 請求項１記載の半導体装置の製造方法に
よって製造された半導体装置。4. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to claim 1.
JP17292898A 1998-06-19 1998-06-19 Manufacturing method of semiconductor device Expired - Fee Related JP3726498B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17292898A JP3726498B2 (en) 1998-06-19 1998-06-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17292898A JP3726498B2 (en) 1998-06-19 1998-06-19 Manufacturing method of semiconductor device

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JP2000012594A true JP2000012594A (en) 2000-01-14
JP3726498B2 JP3726498B2 (en) 2005-12-14

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003039728A (en) * 2001-07-31 2003-02-13 Sanyo Electric Co Ltd Circuit unit and optical printing head with the same
JP2008227361A (en) * 2007-03-15 2008-09-25 Nec Corp Electronic equipment

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392943A (en) * 2014-12-05 2015-03-04 常州瑞华电力电子器件有限公司 Preparation method of low-stress high-weldability nickel-plated electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003039728A (en) * 2001-07-31 2003-02-13 Sanyo Electric Co Ltd Circuit unit and optical printing head with the same
JP2008227361A (en) * 2007-03-15 2008-09-25 Nec Corp Electronic equipment

Also Published As

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