JP2000011328A - Magnetic head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic head and a manufacturing method therefor by which high detection current density can be shown in spite of having a wide detection area for effeciently detecting a signal magnetic flux and excellent reproducing characteristics of recorded imformation is realized and high adaptability to a semiconductor process and to narrowing of a track of a recording medium is attained. SOLUTION: In the magnetic head provided with a magneto-resistance effect element 4 which is substantially arranged at a gap part of yoke members 5, 6 and has a lamination structure in which plural magneto-resistance effect element layers are laminated, plural magneto-resistance effect element member layers are laminated via intermediate insulating member layers electrically insulating them and then end faces of the laminated magneto-resistance effect element member layers and the intermediate insulating member layers are machined in a direction oblique to a lamination direction. The magnetic head obtained by this constitution displays excellent reproduction characteristics of the recorded imformation and has sufficient adaptability to the semiconductor process and narrowing of the track of the recording medium.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic head and a method of manufacturing the same, and more particularly, to a method of reproducing information from a magnetic recording medium utilizing a magnetoresistance effect.

[0002]

2. Description of the Related Art In recent years, as the density of magnetic information recording has been increased, research and development of magnetic heads capable of coping with the increase in density have been earnestly performed.

As such a magnetic head, a bulk-type magnetic head does not require a wound coil, and can be made thinner. Has been put to practical use.

On the other hand, as a magnetic recording medium, a magnetic tape is widely used, and a magnetic recording medium on which a vapor-deposited film containing a metal is formed from the viewpoint of high-density recording has been put to practical use. It is also increasingly used in the consumer sector.

Therefore, in order to meet such a situation, it is necessary for the MR head to realize sufficient durability while responding to the increase in recording density, and a so-called yoke type MR head has been proposed.

FIGS. 8 and 9 show a schematic structure of a conventional yoke type MR head. FIG. 8 is a plan view, and FIG.
It is sectional drawing equivalent to X cross section.

Such an MR head has a laminated structure. Specifically, as can be understood by referring to these drawings, M
Magnetic substrate 101 made of n-Zn alloy or Ni-Zn alloy
Is provided with an insulating layer 102 made of SiO ₂ or Al ₂ O ₃ , in which a bias conductor 103 made of Cu and a magnetoresistive element (MR element) 10 made of a Ni—Fe alloy are provided.
4 are buried so that the bias conductor 103 and the MR element 104 are parallel to each other.

Here, the insulating layer 102 has an electrical insulating property, but does not exhibit a substantial magnetic insulating property, and substantially prevents a magnetic field generated between the front yoke 105 and the back yoke 106. Without reaching the MR element 104.

On the insulating layer 102 in which the bias conductor 103 and the MR element 104 are buried, C
A front yoke 105 and a back yoke 106 made of an o-based amorphous alloy are provided.

[0010] Here, the bias conductor 103 is connected to Y in FIG.
And a lead wire 1 at both ends in the vertical direction.
07 and 107 'have been notified.

The MR element 104 has a size of 3 to 5 × 10
It has a thickness of ^-2 μm and is rectangular. Note that this M
Lead wires 108 and 108 'are connected to both ends in the length direction of the R element 104 (Y direction in FIG. 8).

Further, as shown in FIG. 9, at the left end, a front yoke 105 is a magnetic gap which is a parallel gap formed by a predetermined distance from the magnetic substrate 101 via the insulating layer 102. g, and the magnetic gap g has a size of 2-3 × 10 ⁻¹ μm. On the other hand, at the right end of the figure, a part of the back yoke 106
It is in contact with the magnetic substrate 101.

It should be noted that the MR head having such a structure can be relatively moved in the direction A shown in FIG.

In the above configuration, the lead wires 107, 1
Bias current I ₂ a bias conductor 103 through 07 '
And the detection current I ₁ is supplied to the MR element 104 through the lead wires 108 and 108 ′. Next, a magnetic field corresponding to information recorded on the magnetic tape 110 flows between the front yoke 105 and the back yoke 106, and the MR element 104 detects a leakage magnetic field between the yokes 105, 106.

Then, the resistance value of the MR element 104 changes, and the voltage value between both ends of the MR element 104 changes.

Then, the change in the voltage value is detected, and the information recorded on the magnetic tape 110 is reproduced in accordance with the change in the voltage value. In other words, in other words, MR
The information recorded on the recording medium is reproduced by detecting a voltage change corresponding to the signal magnetic flux applied to the element 104.

Here, the magnetic circuit formed at this time corresponds to a loop that sequentially connects the front yoke 105, the MR element 104, the back yoke 106, and the substrate 101.

Of course, in the MR head having such a configuration, it is required to improve the detection efficiency of the signal magnetic flux and to improve the reproduction characteristics of the recorded information.

For this purpose, it is necessary to cause the MR element 104 to efficiently detect the signal magnetic flux. For example, it is necessary to increase the detection area of the MR element 104 (for example, the area of the upper surface in FIG. 9). Become.

Furthermore, in conjunction with the rapid progress in miniaturization of electrical equipment and the like on which the MR head having such a configuration is mounted and the progress in increasing the density of information recording on a recording medium, the MR head has been required to be further miniaturized. The necessity of performing fine processing by applying a so-called semiconductor process to a manufacturing process is also increasing, and realization of an MR head having a configuration sufficiently adapted to such a semiconductor process is also desired.

Further, under such circumstances, the track width of the recording medium (the width in the Y direction in FIG. 8) tends to be narrower. On the other hand, it is also desired to realize an MR head having a sufficient degree of freedom in fitting.

[0022]

However, in the conventional MR head, increasing the detection area in order to efficiently detect the signal magnetic flux increases the cross-sectional area of the MR element through which the detection current passes. It leads to making it. This means that the specific resistance decreases and the current density of the detection current decreases.

To cope with this, the cross-sectional area through which the detection current passes can be reduced while securing a large detection area, such as by reducing the thickness of the MR element. Supplying current may be considered. However, in the former case, no matter how much the semiconductor process capable of fine processing is applied, there is a certain limit to thinning the MR element in consideration of the film quality and product yield, and the latter. In the case of (1), large power consumption is required in the first place, and there is a problem that unnecessary heat is generated by the large detection current.

Further, in the conventional MR head, it is possible to improve the detection efficiency of the signal magnetic flux, and it can be evaluated that the conventional MR head can be sufficiently adapted to the semiconductor process and can be sufficiently adapted to the narrow track of the recording medium. Has not been proposed.

The present invention provides a high detection current density while having a wide detection area for efficiently detecting a signal magnetic flux, realizes good reproduction characteristics of recorded information, and realizes a semiconductor process and a recording medium. It is an object of the present invention to provide a magnetic head having high suitability for narrowing the track width and a method of manufacturing the same.

[0026]

In order to solve the above-mentioned problems, a magnetic head according to the present invention has a laminated structure in which a plurality of magnetoresistive element layers are laminated substantially in a gap of a yoke member. It has a configuration having a magnetoresistive effect element.

With this configuration, a high detection current density can be exhibited while having a wide detection area for efficiently detecting a signal magnetic flux, thereby realizing good reproduction characteristics of recorded information and adapting to a semiconductor process. The present invention provides a magnetic head which is also highly adaptable to narrow tracks.

The method of manufacturing a magnetic head of the present invention
After laminating a plurality of magnetoresistive element layers through an intermediate insulating member layer that electrically insulates them, the end faces of the laminated magnetoresistive element layers and the intermediate insulating member layer are aligned with respect to the laminating direction. This is a configuration in which processing is performed in an oblique direction.

The magnetic head obtained by such a manufacturing method has a wide detection area for efficiently detecting a signal magnetic flux, can also exhibit a high detection current density, and realizes good reproduction characteristics of recorded information. And the suitability for the semiconductor process and the narrowing of the track becomes high. In particular, the end face formed obliquely in the laminating direction becomes extremely suitable when the connection portion between the magnetoresistive effect element member layers is formed by applying a semiconductor process.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention according to claim 1 is characterized in that the yoke members 5, 6; a gap electrically insulated from the yoke members 5, 6 and magnetically connected; And a multi-layered magneto-resistance effect element 4 having a plurality of magneto-resistance effect element layers.

In the magnetic head having such a configuration, since each of the magnetoresistive elements 4a and 4c detects a signal magnetic flux, the detection area is increased without increasing the cross-sectional area through which the detection current passes. Therefore, the detection efficiency of the signal magnetic flux is improved, but the detection current density cannot be reduced. Therefore, the necessity of reducing the film thickness to the limit or supplying a large current is eliminated.

Further, since such a magnetoresistive element basically has a laminated structure which is vertically stacked, the processing step in a plane direction in a semiconductor process requiring a complicated fine step is minimized. It can be suppressed, and the configuration becomes more suitable for the semiconductor process.

Further, since such a magnetoresistive element basically has a laminated structure which is laminated in a direction perpendicular to the track width direction of the recording medium, it is well suited for narrowing the track of the recording medium. It also has a configuration.

Here, as described in claim 2, the fact that the plurality of magnetoresistive element layers 4a and 4c are electrically connected in series means that a change in resistance value occurs when recorded information is reproduced. Can be detected as a large value, the detection output increases, and the effect of increasing the specific resistance when the film thickness is reduced is also large, which contributes to an increase in the detection current density.

On the other hand, according to the third aspect of the present invention,
, A laminating step of laminating a plurality of magnetoresistive element layers 22a and 22c on a base 21 via an intermediate insulating member layer 22b for electrically insulating them, and a magnetic layer laminated in the laminating step. Resistance effect element member layers 22a, 22
c and the end surface of the intermediate insulating member layer 22b in a direction oblique to the laminating direction, and the magnetoresistive effect elements 4 and 24 obtained in the processing step are electrically connected to the yoke members 5 and 6, And an arranging step of arranging the magnetic head so as to be substantially arranged in a gap portion which is electrically insulated and magnetically communicated with each other.

The magnetic head obtained by such a manufacturing method is as follows.
Since each of the magnetoresistive elements detects the signal magnetic flux, the detection area is increased without increasing the cross-sectional area through which the detection current passes. Therefore, the detection efficiency of the signal magnetic flux is improved, and the detection current density does not decrease. Therefore, the necessity of reducing the film thickness to the limit or supplying a large current is eliminated.

Furthermore, since the magnetoresistive element obtained by such a manufacturing method basically has a laminated structure which is vertically stacked, a semiconductor which tends to require a complicated fine process is required. The processing steps in the planar direction in the process can be suppressed as much as possible, and the configuration is more suitable for the semiconductor process.

The end face formed obliquely in the laminating direction obtained by such a manufacturing method is suitable for forming a connection portion between layers of the magnetoresistive element by applying a subsequent semiconductor process. It becomes something.

Furthermore, the magnetoresistive effect element obtained by such a manufacturing method basically has a laminated structure laminated in a direction perpendicular to the track width direction of the recording medium, and is more suitable for narrowing the track. It becomes the composition which did.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings.

FIG. 1 is a plan view showing a schematic configuration of the magnetic head (MR head) of the present embodiment as viewed from above, FIG. 2 is a schematic configuration of a cross section taken along line XX of FIG. 1, and FIG. This corresponds to a schematic configuration in which the YY cross section of FIG. 1 is rotated.

As shown in FIGS. 1 to 3, the MR head according to the present embodiment first forms an insulating layer 2 on a magnetic substrate 1 and places a bias in the insulating layer 2 as in the conventional example. The conductor 3 is embedded at a predetermined distance from the magnetic substrate 1.

Next, in the present embodiment, instead of the conventional MR element 104, a multilayer MR element 4 is embedded above the bias conductor 3 at a predetermined interval.

The front yoke 5 and the back yoke 6 are provided around the insulating layer 2 in which the bias conductor 3 and the multilayer MR element 4 are embedded. The left side portion of the front yoke 5 shown in FIG. 2 forms a magnetic gap g with the magnetic substrate 1 and the back yoke 6
2 is in contact with the magnetic substrate 1.

As shown in FIGS. 1 and 2, the front yoke 5 and the back yoke 6 are opposed to each other with a gap provided at the center thereof. The multilayer MR element 4 is positioned at a predetermined distance from the multilayer MR element 4. The position of the multilayer MR element 4 in the gap with respect to the front yoke 5 and the back yoke 6 may be any position at which the leaked magnetic field in those gaps can efficiently enter through the gap.

As shown in FIGS. 1 and 3, the lead wires 7 and 7 ′ are connected to the bias conductor 3.

Further, as shown in detail in FIG. 3, the multilayer MR element 4 comprises a first MR element 4a, an intermediate insulating layer 4
b and the second MR element 4c are sequentially laminated. 1 and FIG.
As shown in the figure, the lead wires 8 and 8 'are connected,
Is provided.

More specifically, referring to FIG. 4 which shows a perspective view of a main part of the multilayer MR element 4, a lead wire 8 'is connected to the first MR element layer 4a, and the second MR element layer 4a is connected to the first MR element layer 4a. A lead wire 8 is connected to the element layer 4c, and a connection section 9 connects between the first MR element layer 4a and the second MR element layer 4b.

In this embodiment, the magnetic substrate 1 is made of an Mn—Zn alloy, and the insulating layer 2 is made of SiO 2.
₂ , Cu as the bias conductor 3, the MR of the MR element 4
The element layers 4a and 4c are made of a Ni—Fe alloy, the intermediate insulating layer 4b is made of SiO ₂ , the front yoke 5 and the back yoke 6 are made of a magnetic material made of a Co-based amorphous alloy, and the connection part 9 is made of Cu. Each was used.

The size of the multilayer MR element 4 in the plane direction was 4 μm in the X direction and 13 μm in the Y direction in FIG. This size is the XY of the bias conductor 3.
For each of the directions, the front yoke 5 and the back yoke 6
Is set so that the length of the multilayer MR element 4 in the Y direction becomes longer. As shown in FIG. 1, the centers of the gaps formed by the bias conductor 3, the multilayer MR element 4, the front yoke 5, and the back yoke 6 on the XY plane are substantially coincident.

The operation of the MR head configuration of this embodiment having the above configuration will be described.

First, a bias current I ₂ is supplied to the bias conductor 3 through the lead wires 7 and 7 ′ in order to set the magnetization direction of the multilayer MR element 4 to a position where the sensitivity and the linearity can be best. In addition, supplies the detected current I ₁ with respect to the multilayer MR element 4 through the lead wires 8, 8 '.

In this state, when the MR head and the magnetic tape 10 on which information is recorded are relatively moved in the direction A in FIG. 2, a signal magnetic flux corresponding to the information recorded on the magnetic tape 10 causes the front yoke 5 and the The light enters the multilayer MR element 4 via a gap between the back yokes 6.

Then, the resistance value of the multilayer MR element 4 changes according to the incident signal magnetic flux, and the information recorded on the magnetic tape 10 is reproduced according to the change in the resistance value.

Here, the MR head according to the present embodiment has two sets of detection surfaces corresponding to the first MR element layer 4a and the second MR element layer 4b. On the other hand, the detection surface has substantially twice the area.

Therefore, the change in the resistance value of the present embodiment is
The size is substantially twice as large as that of the related art, the reproduction output of the recorded information is further increased, and the reproduction sensitivity is remarkably improved.

[0057] Furthermore, the cross-sectional area of the detected current I ₁ of the first MR element layer 4a and the second MR element layer 4b of the multilayer MR element 4 passes, since sufficient if set to equal to that of the conventional detection It does not cause a phenomenon such as a decrease in current density, an increase in power consumption for compensating for the current density, or heat generation.

Now, a method of manufacturing an MR head according to the present embodiment will be described in detail.

FIG. 5 sequentially shows each of the manufacturing steps of the MR head according to the present embodiment.

First, as shown in FIG. 5A, a first MR element member layer 22a, an intermediate insulating member layer 22b, and a second MR element member layer 22c are sequentially laminated on a base 21. A resist portion 23 is formed thereon.

More specifically, the base 21 is made up of FIGS.
Corresponds to the structure in which the magnetic substrate 1, the insulating layer 2, the bias conductor layer 3 (including the lead wires 7, 7 '), and the insulating layer 2 thereover are formed in the configuration of the MR head described with reference to FIG. . The manufacturing process up to this point is a general one,
An insulating layer 2 is formed on the prepared magnetic substrate 1, a Cu vapor deposition film is formed on the insulating layer 2, and then the Cu vapor deposition film is etched to form a bias conductor layer 3. It is covered with the insulating layer 2 and embedded.

Next, the base 21 prepared in this manner is sputtered with a Ni—Fe alloy to a thickness of 5 ×.
^10-2 forming a first MR element member layer 22a of [mu] m, on the first MR element member layer 22a, thickness by sputtering using a SiO ₂ 2 × 10 ^{- 1} [mu] m of the intermediate insulating member layer 2
2b, and a first layer is formed on the intermediate member layer 22b.
A second MR element member layer 22c was formed in the same manner as the MR element member layer 22a.

Then, the second MR element member layer 22c
A negative type resist made of novolak resin is applied on the upper surface, and the thickness is 3 μm and the undercut angle θ _{0 of} 45 degrees is applied.
Is formed.

Next, as shown in FIG. 5B, the first MR element member layer 22a is formed by ion milling.
Intermediate insulating member layer 22b and second MR element member layer 22c
Was processed into a tapered shape oblique to the laminating direction (vertical direction in the figure).

FIG. 6 shows details of the ion milling method of the present embodiment.

In FIG. 6, the first MR element member layer 22
a, the intermediate insulating member layer 22b and the second MR element member layer 2
2c are sequentially laminated, and the undercut angle θ ₀ is 4
With the resist part 23 arranged at 5 degrees, an ion beam with a source of Ar gas was irradiated from above the resist part 23 at an incident angle θ _i while rotating about the central axis of the resist part 23.

Then, the end face of the laminated body of the first MR element member layer 22a, the intermediate insulating member layer 22b, and the second MR element member layer 22c was processed into a tapered shape so as to have a taper angle θ. .

FIG. 7 shows the angle of incidence θ of the ion beam in the ion milling method of the present embodiment under such conditions.
The relationship between _i and the taper angle θ of the end face is shown.

According to FIG. 7, the incident angle θ _{i of the} ion beam is shown.
It can be seen that the taper angle θ decreases as the distance from the central axis increases.

Accordingly, it can be understood that, in principle, by increasing the incident angle θ _i of the ion beam, a taper angle θ of an arbitrary size can be obtained with a high degree of freedom.

In the present embodiment, it is desirable to minimize the taper angle θ itself and make the tapered end surface as wide as possible in consideration of the formation of the connection portion described later. When θ is too small, the thickness of the end face itself becomes too thin, resulting in insufficient strength. Therefore, in order to preferably satisfy both conditions, the incident angle θ _i of the ion beam is set to 18 degrees, and the taper angle is set. θ is 5
Set to degree.

When the taper angle θ is set to 5 degrees in this manner, the resulting multilayer MR element 24 substantially composed of the first MR element layer 24a, the intermediate insulating layer 24b, and the second MR element layer 24c. (Corresponding to the multilayer MR element 4 described with reference to FIGS. 1 to 4.) The length of the end face is about 3 μm, and the length of each end face of the first MR element layer 24 a and the second MR element layer 24 c is also Approximately 5 × 10 ⁻¹ μm can be secured, and the surface on which the connection portion is formed can be sufficiently secured while securing the film thickness on the end surface.

Next, as shown in FIG.
MR element layer 24a, intermediate insulating layer 24b and second MR
After applying a positive type resist made of a novolak resin to a thickness of about 3 μm on the laminated body composed of the element layer 24c, a portion of the resist corresponding to one end face of the laminated body is removed by a photolithographic method. The end face of the laminate was exposed. Then, a Cu vapor deposition layer is formed to a thickness of 2 μm by a vacuum vapor deposition method.
a, 25b, and conductor films 26a, 2
A structure in which 6b and 26c were formed was obtained.

Next, as shown in FIG. 5D, the resist layers 25a, 25
b, and the conductor films 26a and 26c are removed by a lift-off method, and then SiO ₂ is removed from the first M by using a sputtering method.
On the laminate composed of the R element layer 24a, the intermediate insulating layer 24b, and the second MR element layer 24c, a thickness of 1 × 10
An insulating layer 28 of ^-1 μm was formed, and the laminate was embedded.
Here, the remaining conductor film 26b becomes the connection portion 27 (corresponding to the connection portion 9 in FIGS. 1 to 4). Note that the upper surface of the insulating layer 28 was mechanically polished so as to have a smooth surface.

Next, as shown in FIG. 5E, a positive resist made of novolak resin is applied to a thickness of 2 μm, and then the first MR element layer 24a and the intermediate insulating layer 2 are formed.
The resist is selectively removed by photolithography at two end faces of the stacked body composed of the second MR element layer 24b and the second MR element layer 24c.
9b and 29c were formed.

Next, as shown in FIG. 5 (f), the resist layers 29a, 29b and 29c are used as a mask for etching by RIE (reactive ion etching), and the two end faces of the laminate are etched. Exposed.

Next, a Cu vapor-deposited film having a thickness of 2 μm was formed by vacuum vapor deposition on the thus-exposed laminate having two exposed end faces, and a novolak resin film was further formed thereon. Was applied to a thickness of about 2 μm. Then, the first MR element layer 24a, the intermediate insulating layer 2
After patterning a resist so as to leave two end faces and a portion corresponding to a lead wire of the laminated body composed of the 4b and the second MR element layer 24c, etching is performed using the resist as a mask, and FIG. As shown in FIG. 5H, the lead wire extraction portions 31a and 31b and the lead wire 3
2a and 32b were formed.

FIG. 5 (h) is a plan view of FIG. 5 (g), and the lead wires 32a and 32b correspond to the lead wires 8 and 8 'of the MR head described with reference to FIGS. Equivalent, 2
The line width was set to μm.

After the above steps, an insulating layer 2 is additionally laminated on the formed structure to form a first MR element layer 2.
4a, an intermediate insulating layer 24b and a second MR element layer 24c, the multilayer MR element 24 is disposed in a gap between the front yoke 5 and the back yoke 6, so that the two yokes 5,
6 is also provided to substantially complete the MR head.

According to such a manufacturing method, a semiconductor process can be suitably applied in manufacturing the MR head, and particularly, the end face of the multilayer MR element can be processed simply and reliably so as to be inclined in a tapered shape. As a result, the connection portion of each MR element layer could be reliably formed by a simple process.

In this embodiment, for convenience of explanation,
The multilayer MR element is formed by a first MR element layer, an intermediate insulating layer, and a second
Although the description has been given of the three-layer structure composed of the MR element layers described above, it is of course possible to provide three or more MR element layers in the same manner while sandwiching the intermediate insulating layer.

The materials used in the present embodiment, numerical values,
The forming method and the like are merely examples, and other methods can be used as long as they exhibit equivalent functions.

For example, regarding materials, a Ni—Zn alloy can be used as a magnetic substrate, Al ₂ O ₃ can be used as an insulating layer or an intermediate insulating layer, and a Ni—Co alloy can be used as an MR element. is there.

[0084]

As described above, according to the magnetic head and the method of manufacturing the same of the present invention, a high detection current density can be exhibited while having a wide detection area for efficiently detecting a signal magnetic flux. It can provide a magnetic head that achieves excellent read characteristics of recorded information and is highly compatible with semiconductor processes and narrow tracks. A magnetic head that can be optimally used can be realized.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing a configuration of a yoke type MR head according to an embodiment of the present invention.

FIG. 2 is a sectional view schematically showing the configuration of the yoke type MR head.

FIG. 3 is a sectional view schematically showing the configuration of the yoke type MR head.

FIG. 4 is a view schematically showing a configuration of a multilayer MR element of the yoke type MR head.

FIG. 5 is a diagram schematically illustrating steps of a method for manufacturing the yoke type MR head.

FIG. 6 is a view for explaining processing on the end face of the multilayer MR element in the method of manufacturing the yoke type MR head.

FIG. 7 is a diagram showing a relationship between an incident angle of an ion beam and a taper angle of the end face when processing the end face of the multilayer MR element in the method of manufacturing the yoke type MR head.

FIG. 8 is a plan view schematically showing a configuration of a conventional yoke type MR head.

FIG. 9 is a sectional view schematically showing the configuration of the yoke type MR head.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Magnetic substrate 2 Insulating layer 3 Bias conductor 4 Multilayer MR element 5 Front yoke 6 Back yoke 7, 7 ', 8, 8' Lead wire 9 Connection part 10 Magnetic tape 21 Base 22a First MR element member layer 22b Intermediate insulating member Layer 22c Second MR element member layer 23 Resist part 24a First MR element layer 24b Intermediate insulating layer 24c Second MR element layer 25a, 25b Resist layer 26a, 26b, 26c Conductive film 27 Connection part 28 Insulating layer 29a, 29b, 29c Resist layer 30a, 30b, 30c Conductive layer 31a, 31b Lead take-out part 32a, 32b Lead

Claims (3)

[Claims] 1. A laminated structure having a yoke member, a gap electrically insulated from the yoke member and magnetically connected, and a plurality of magnetoresistive element layers substantially arranged in the gap. A magnetic head comprising: a magnetoresistive element. 2. The magnetic head according to claim 1, wherein the plurality of magnetoresistive element layers are electrically connected in series. 3. A step of preparing a substrate, a step of laminating a plurality of magnetoresistive element member layers on the substrate via an intermediate insulating member layer for electrically insulating them, and a step of laminating in the laminating step. A processing step of processing the end surfaces of the obtained magnetoresistive element layer and the intermediate insulating member layer in a direction oblique to the laminating direction, and a yoke member obtained by processing the magnetoresistive element obtained in the processing step. An arranging step of arranging the gap substantially electrically insulated and magnetically communicated with each other.