JP2000003911A - Method for forming silicon oxide film and method for manufacturing thin-film magnetic head - Google Patents

Abstract

(57) [Problem] To provide a method for forming a silicon oxide film capable of obtaining a large dielectric strength even when it is formed thin by a CVD method at a low temperature. Further, the present invention provides a method of manufacturing a thin-film magnetic head that can cope with miniaturization of recording bits. A method of forming a silicon oxide film by a plasma CVD method using an organic silane gas and oxygen, wherein a flow rate ratio of the organic silane gas to oxygen is set to 0.0001 to 0.05, and excitation is performed. The silicon oxide films 14 and 20 are formed on the substrate 10 at a frequency of 10 to 150 kHz.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for forming a silicon oxide film and a method for manufacturing a thin-film magnetic head.
The present invention relates to a method for forming a silicon oxide film capable of obtaining a large dielectric strength even when formed thinly by a CVD method at a low temperature, and a method for manufacturing a thin film magnetic head capable of coping with miniaturization of recording bits.

[0002]

2. Description of the Related Art In recent years, with the development of multimedia,
The capacity of magnetic recording disks for computers is increasing at a rate of about 1.6 times per year, and the recording bits are becoming finer as the recording capacity increases. In order to obtain a sufficient reproduction output from miniaturized recording bits, magneto-resistive elements (Magneto-Resistive elemen
t) (hereinafter, referred to as an MR element), a thin film magnetic head is widely used.

A conventional thin-film magnetic head will be described with reference to FIG. FIG. 13A is a cross-sectional view showing a conventional thin-film magnetic head, and FIG. 13B is a perspective view showing a cross-section of the conventional thin-film magnetic head. As shown in FIG. 13, a shield film 212 is formed on a substrate 210, and a gap insulating film 214 made of an alumina (Al ₂ O ₃ ) film or a silicon oxide film is formed on the shield film 212. ing.

An MR element 216 having a tapered end is formed on the gap insulating film 214, and electrodes 218 are connected to both ends of the MR element 216, respectively. On the gap insulating film 214, the MR element 216, and the electrode 218, a gap insulating film 220, a shield film 222, and a gap layer 224 are further formed in this order. On the gap layer 224, a write used for writing is performed. A magnetic pole 226 is formed. A coil 227 is formed so as to intersect with the write magnetic pole 226.

In such a conventional thin film magnetic head, the MR element 2 is interposed between the shield film 212 and the shield film 222.
16 is adopted, and the shield film 21
2, 222, the influence of an external magnetic field on the MR element 216 is reduced. Conventionally, a silicon oxide film, an alumina film, or the like has been used as a gap insulating film (Japanese Patent Application Laid-Open Nos. 58-220240, 58-19718, and 6-176322). The film was formed in consideration of the following points.

That is, since the MR element is made of a magnetic material, the gap insulating film must be formed at a temperature lower than the Curie point of the magnetic material in order to maintain the magnetized state. For example, when an FeNi film, which is a typical magnetic material, is used for an MR element, the gap insulating film is 250 mm.
It must be formed at a temperature of not more than ℃. Therefore, when forming the gap insulating film, a CVD method in which a high temperature of 350 ° C. to 400 ° C. is applied at the time of film formation cannot be used, and an electron beam evaporation method or a sputtering method capable of forming a film at a relatively low temperature can not be used. The law was used.

As a technique for forming a gap insulating film made of a silicon oxide film at a low temperature equal to or lower than the Curie point of an FeNi film, a structural formula

[0008]

Embedded image

[0009] CVD (Chemic) using TEOS (tetraethoxysilane) and ozone as source gases
al Vapor Deposition (chemical vapor deposition)) and plasma CVD by two-frequency excitation (JP-A-59-207626, JP-A-7-183236, JP-A-6-17)
No. 5116) has been proposed.

[0010]

However, the gap insulating film of the conventional thin-film magnetic head has a large thickness of 50 nm or more, so that the gap between the shield films is widened. In FIG. 14, the left side schematically shows a case where the conventional thin-film magnetic head 200 faces the recording bit 250 of the miniaturized magnetic recording disk. The interval between 212 and the shield film 222 is too large, so that sufficient resolution cannot be obtained.

Therefore, as shown on the right side of FIG. 14, the gap insulating films 214a and 220a of the thin-film magnetic head 200a are formed.
a to form the shield film 212a and the shield film 22
The resolution is improved by reducing the distance from 2a,
It is conceivable to cope with miniaturization of the recording bit 250 of the magnetic recording disk. In this case, the gap insulating film 214
It is desirable to reduce the thickness of each of the a and 220a to, for example, 50 nm or less. However, in the above-described method of forming the gap insulating film, if the thickness is reduced to 50 nm or less, the number of pinholes increases, and a sufficient insulation The proof stress could not be secured.

In the CVD method using TEOS and ozone as source gases, a post-treatment, that is, a high-temperature heat treatment must be performed in order to improve electrical characteristics such as leak current (Japanese Patent Application Laid-Open No. 7-263441). 3) Since the heat treatment is performed at a temperature higher than the Curie temperature of the magnetic material of the MR element, the state of magnetization of the MR element cannot be maintained. Further, in plasma CVD using two-frequency excitation, a plurality of power supplies for generating high frequencies are required, so that expensive manufacturing equipment must be used.

An object of the present invention is to provide a method for forming a silicon oxide film which can obtain a large dielectric strength even when it is formed thin by a CVD method at a low temperature. Another object of the present invention is to provide a method of manufacturing a thin-film magnetic head that can cope with miniaturization of recording bits.

[0014]

The object of the present invention is to provide a method for forming a silicon oxide film by a plasma CVD method using an organic silane gas and oxygen.
The flow ratio of the organosilane gas to oxygen is 0.0001 to
0.05 and the excitation frequency is 10 kHz to 150 kHz
The present invention is achieved by a method for forming a silicon oxide film, which comprises forming a silicon oxide film on a substrate. Thus, since the silicon oxide film is formed by the plasma CVD method in which the flow rate ratio of TEOS / O ₂ and the excitation frequency are set to appropriate values, even when a thin silicon oxide film is formed by the CVD method at a low temperature. Thus, a high-quality silicon oxide film having a large dielectric strength can be formed without deteriorating the silicon oxide film.

Further, in the above-described method for forming a silicon oxide film, the temperature of the substrate is set to 170 ° C. to 250 ° C.
Preferably, the silicon oxide film is formed. Thus, even when a thin silicon oxide film is formed by a CVD method at a low temperature, a high-quality silicon oxide film having a large dielectric strength can be formed without deteriorating the silicon oxide film.

In the method for forming a silicon oxide film, the organic silane gas may have a structural formula

[0017]

Embedded image

The alkoxysilane represented by the formula (1) is desirable. In the method for forming a silicon oxide film, the organic silane gas may have a structural formula

[0019]

Embedded image

It is desirable to use tetraethoxysilane represented by the following formula. In the method for forming a silicon oxide film, the organic silane gas may have a structural formula

[0021]

Embedded image

It is desirable to use tetramethoxysilane represented by the following formula. In the method for forming a silicon oxide film, the organic silane gas may have a structural formula

[0023]

Embedded image

It is desirable to use tetraisopropoxysilane represented by the following formula. Further, the above object is to provide a first shield film forming step of forming a first shield film on a substrate,
A first silicon oxide film forming step of forming a first silicon oxide film on the first shield film, an MR element forming step of forming an MR element on the first silicon oxide film, Forming a second silicon oxide film on the element and on the first silicon oxide film; forming a second silicon oxide film on the second silicon oxide film; and forming a second shield film on the second silicon oxide film. A second shield film forming step, wherein in the first or second silicon oxide film forming step, the flow rate ratio of the organic silane gas to oxygen is 0.000.
1 to 0.05, excitation frequency 10 kHz to 150 k
Hz is achieved by a method of manufacturing a thin-film magnetic head, wherein the first or second silicon oxide film is formed by a plasma CVD method using an organic silane gas and oxygen. Thereby, the plasma CVD with the TEOS / O ₂ flow ratio and the excitation frequency set to appropriate values
Since the silicon oxide film is formed by the method, CVD at low temperature
Even when a thin silicon oxide film is formed by the method, a high-quality silicon oxide film having a large dielectric strength can be formed without deteriorating the silicon oxide film.
Since a silicon oxide film having a large dielectric strength can be formed thin at a low temperature, the resolution of the thin-film magnetic head can be improved, and it is possible to cope with miniaturization of recording bits.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a silicon oxide film is formed by a plasma CVD method using TEOS and oxygen as source gases, and the excitation frequency and the TEOS / O ₂ flow ratio are set to appropriate values. The main feature of this method is that a silicon oxide film is formed. When forming a silicon oxide film using TEOS and oxygen as raw materials, if a plasma CVD method in which the excitation frequency is set low is used, ions in the plasma can follow a change in the electric field, and the silicon oxide film during the film formation can be formed. Ions can be incident on the surface of the film. Therefore, when the ions are incident in this manner, it is possible to supply the energy of the electric field to the reactive species present on the surface of the silicon oxide film being formed, and to supply the energy necessary for the migration and the chemical reaction. It is considered that the formation of the silicon oxide film progresses while the reactive species active moves actively on the surface of the silicon oxide film.

Further, the flow rate ratio of TEOS / O ₂ (TEOS
It is considered that if the flow rate is reduced (TEOS saturated vapor pressure × carrier argon flow rate / total pressure), a high-quality silicon oxide film can be formed. That is, if the flow rate ratio of TEOS / O ₂ is reduced, the silicon oxide film is formed at a low speed. If a silicon oxide film is formed at a low speed, a sufficient reaction occurs in the process of forming the silicon oxide film. Therefore, even when a thin silicon oxide film is formed, a high-quality silicon oxide film having a small number of pinholes is formed. It is thought that it can be done.

However, when the flow rate ratio of TEOS / O ₂ is reduced by simply using the plasma CVD method in which the excitation frequency is set low, it is difficult to form a high-quality silicon oxide film having a large dielectric strength. That is, when ions enter the surface of the silicon oxide film, the silicon oxide film or the base of the silicon oxide film is sputtered, and the film formation time is long. I will.

In order to form a silicon oxide film having a high dielectric strength without deteriorating the silicon oxide film or the base of the silicon oxide film, it is necessary to set the TEOS / O ₂ flow ratio and the excitation frequency to appropriate values. It is considered good. TEO
By setting the S / O ₂ flow ratio and the excitation frequency to appropriate values, even when the thin film is formed as thin as 50 nm or less by the CVD method at a low temperature, the number of pinholes is small, the dielectric strength is large, and good quality is obtained. It is considered that a silicon oxide film can be formed.

Therefore, in the present invention, 170 ° C. to 250 ° C.
In the plasma CVD method, the silicon oxide film is formed by appropriately setting the TEOS / O ₂ flow rate ratio and the excitation frequency. The evaluation results of the silicon oxide film performed for examining appropriate values of the TEOS / O ₂ flow rate ratio and the excitation frequency will be described with reference to FIGS. FIG. 7 is a cross-sectional view and a plan view showing a sample formed by imitating a thin-film magnetic head. FIG. 8 shows TEOS / O
Is a graph showing the relationship between the _second flow ratio and the average dielectric strength. FIG. 9 is a graph showing the relationship between the average dielectric strength and excitation frequency. FIG. 10 is a sectional view showing a sample for measuring the pinhole density. FIG. 11 is a graph showing the relationship between the flow rate ratio of TEOS / O ₂ and the pinhole density,
FIG. 12 is a graph showing the relationship between the excitation frequency and the pinhole density.

(Dielectric Strength) First, the evaluation results of the dielectric strength will be described with reference to FIGS. FIG. 7 shows a sample simulating a thin-film magnetic head for evaluating the dielectric strength of a silicon oxide film. That is, as shown in FIG. 7A, on a silicon substrate 110, an electrode layer 112, a gap insulating film 114 made of a silicon oxide film, and an electrode layer 11 are formed.
7 are formed in order, and two electrodes 118 are formed on the electrode layer 117. In addition, as the electrode 118,
A planar shape as shown in FIG. 7A was used. Electrode layer 1
A gap insulating film 120 made of a silicon oxide film is formed on the electrode 17 and the electrode 118, and an electrode layer 122 is formed on the gap insulating film 120. Note that the electrode layers 112, 117, 122, and the electrode 118 were formed by an electron beam evaporation method.

The gap insulating films 114 and 120 are
Plasma CVD using a parallel plate type plasma CVD device
It was formed by a method. The film forming conditions were as follows: discharge output 100 W, excitation frequency 10 kHz to 13.56 MHz, TEOS / O
₂ Flow rate ratio 0.0001 to 0.09, deposition pressure 0.5 To
rr and the substrate temperature were 200 ° C. Using such a sample, the dielectric strength between the electrode layer 117 and the electrode layer 122 and the dielectric strength between the electrode layer 112 and the electrode layer 117 were measured using the dielectric strength tester 150. Here, the potential gradient when the amount of leakage current was 1 × 10 ⁻⁶ A or more was defined as the dielectric strength, and the average was determined to determine the average dielectric strength.

FIG. 8 shows that the flow rate ratio of TEOS / O ₂ is 0.0
It is a graph which shows the measurement result of average dielectric strength at the time of forming gap insulating films 114 and 120 by setting suitably in the range of 001-0.09. Set the excitation frequency to 0.
The measurement was performed when the frequency was 1 MHz and the thickness of the gap insulating films 114 and 120 was 20 nm and 50 nm. As can be seen from FIG. 8, the flow rate ratio of TEOS / O ₂ was 0.0
In the range of 001 to 0.05, the gap insulating film 11
When the film thickness of each of the layers 4 and 120 is 50 nm, a good average dielectric strength exceeding 8 MV / cm is obtained.
Even when the film thickness of 14, 120 is 20 nm, 6 MV /
An average dielectric strength of more than 1 cm was obtained.

FIG. 9 shows that the excitation frequency ranges from 10 kHz to 10 kHz.
It is a graph which shows the measurement result of average dielectric strength at the time of forming gap insulating films 114 and 120 by setting suitably in the range of 13.56 MHz. The flow ratio of TEOS / O ₂ is set to 0.016, and the gap insulating films 114 and 12 are formed.
The measurement was performed when the film thickness of 0 was 20 nm and 50 nm.

As can be seen from FIG. 9, when the excitation frequency is 10
In the range of kHz to 150 kHz, a good average dielectric strength of 10 MV / cm was obtained in both cases where the thickness of the gap insulating films 114 and 120 was 20 nm and 50 nm. (Pinhole Density) Next, the evaluation result of the pinhole density of the silicon oxide film, that is, the evaluation result of the number of pinholes per unit area will be described with reference to FIG.

FIG. 10 is a sectional view showing a sample used for measuring the pinhole density. As shown in FIG. 10, a metal layer 112a made of an FeNi film is formed on a silicon substrate 110a, and a gap insulating film 114a made of a silicon oxide film is formed on the metal layer 112a. Such a sample was immersed in an etching solution for FeNi film (Fe (Cl) ₃ + HCl) for 30 seconds, and then the pinhole density was calculated by measuring the number of pinholes using etch pits.

FIG. 11 shows that the flow rate ratio of TEOS / O ₂ is set to 0.1.
By setting appropriately in the range of 0001 to 0.09,
11 is a graph showing a measurement result of a pinhole density when a gap insulating film 114a made of a silicon oxide film is formed. The excitation frequency was set to 0.1 MHz, and the measurement was performed when the thickness of the gap insulating film 114a was 20 nm and 50 nm.

As can be seen from FIG. 11, TEOS / O ₂
When the thickness of the gap insulating film 114a is 50 nm in a flow rate ratio of 0.0001 to 0.05, the pinhole density is 2 / cm ² or less, that is, 100% of the conventional pinhole density. 1 or less, and even when the thickness of the gap insulating film 114a is 20 nm, 2 / c
m ² or less, that is, 1/100 or less of the conventional pinhole density.

FIG. 12 shows that the excitation frequency is 10 kHz.
It is a graph which shows the measurement result of the pinhole density at the time of forming the gap insulating film 114a by setting appropriately in the range of 13.56 MHz. The flow rate ratio of TEOS / O ₂ was set to 0.016, and the measurement was performed when the thickness of the gap insulating film 114a was 20 nm and 50 nm.

As can be seen from FIG. 12, the excitation frequency is 1
In the range of 0 kHz to 150 kHz, when the thickness of the gap insulating film 114a is 50 nm, the pinhole density is 2 / cm ² or less, that is, 10% of the conventional pinhole density.
The gap insulating film 114, 1
Even when the film thickness of No. 20 was 20 nm, it was 2 / cm ² or less, that is, 1/100 or less of the conventional pinhole density.

Based on the above evaluation results, the inventors of the present invention set the TEOS / O ₂ flow rate ratio between 0.0001 and 0.05.
When the excitation frequency is set to 10 kHz to 150 kHz, it is found that even when a thin gap insulating film is formed, a high-quality gap insulating film having a large dielectric strength and a small number of pinholes can be formed. Was.
Next, as one embodiment of the present invention, a thin-film magnetic head to which the above-described method for forming a silicon oxide film is applied and a method for manufacturing the same will be described. FIG. 1 is a sectional view of the thin-film magnetic head according to the present embodiment. 2 to 6 are sectional views showing the steps of the method for manufacturing the thin-film magnetic head according to the present embodiment.

(Thin Film Magnetic Head) First, the thin film magnetic head according to the present embodiment will be explained with reference to FIG. As shown in FIG. 1, a shield film 12 made of an FeN film having a thickness of 2 μm is formed on a substrate 10, and a gap insulating film 14 made of a silicon oxide film having a thickness of 50 nm is formed on the shield film 12. Are formed. The gap insulating film 1
No. 4 is formed by the plasma CVD method in which the flow rate ratio of TEOS / O ₂ and the excitation frequency are appropriately set as described above.

On the gap insulating film 14, a film thickness of 400 n
An MR element 16 made of m magnetoresistive films is formed, and electrodes 18 are connected to both ends of the MR element 16, respectively. On the gap insulating film 14, the MR element 16
A gap insulating film 20 made of a silicon oxide film having a thickness of 50 nm and a Fe film having a thickness of 3.5 μm
A shield film 22 made of a Ni film and a gap layer 24 made of an Al ₂ O ₃ film having a thickness of 0.5 μm are sequentially formed. Further, a write magnetic pole 26 for writing made of an FeNi film is formed on the gap layer 24. In addition,
The gap insulating film 20 is formed by the same method as the gap insulating film 14.

As described above, in the thin-film magnetic head according to the present embodiment, the gap between the shield films 14 and 20 can be reduced because the thickness of the gap insulating films 14 and 20 is as small as 50 nm. Since the distance between the shield films 14 and 20 is small, the resolution can be improved, and accordingly, it is possible to cope with the recording bits of a miniaturized magnetic recording disk.

(Method of Manufacturing Thin Film Magnetic Head) Next, the method of manufacturing the thin film magnetic head according to the present embodiment will be described with reference to FIGS.
This will be described with reference to FIG. First, a shield film 12 made of a 2 μm-thick FeN film is formed on a substrate 10.
(See (a)).

Next, on the shield film 12, a plasma CV
A gap insulating film 14 made of a silicon oxide film having a thickness of 50 nm is formed by the method D (see FIG. 2B). At this time, a parallel plate type plasma CVD apparatus can be used as a film forming apparatus. The film forming conditions include, for example, a discharge output of 100 W and a TEOS / O ₂ flow rate ratio of 0.0001 to 0.
05, an excitation frequency of 10 kHz to 150 kHz, a film forming pressure of 0.5 Torr, and a substrate temperature of 200 ° C. Note that the temperature in the deposition chamber is desirably set as appropriate, and may be, for example, 170 ° C. to 250 ° C. As described above, since the gap insulating film 14 is formed by the plasma CVD method in which the excitation frequency and the flow ratio of TEOS / O ₂ are set to appropriate values, even when the thin gap insulating film 14 is formed, A high-quality gap insulating film 14 having a large dielectric strength can be formed without deteriorating the insulating film 14.

Next, a film thickness of 40 is formed on the gap insulating film 14.
A 0 nm magnetoresistive film 15 is formed. As the magnetoresistive effect film 15, for example, an Fe ₁₉ Ni ₈₁ film or the like can be used. Next, a photoresist is applied on the magnetoresistive film 15 to form a resist film 28.

Next, an alumina film 30 is formed on the resist film 28 by a sputtering method. Next, the alumina film 3
A resist film 32 is formed by applying a photoresist on the substrate 0. Next, the opening 3 reaching the alumina film 30 is formed by patterning the resist film 32.
3 is formed (see FIG. 3).
(B)).

Next, using the resist mask 32a as a mask, the alumina film 30 is etched by ion milling (see FIG. 3C). Next, the resist film 28 and the resist mask 32a are etched by dry etching. Thereby, the resist film 28 under the alumina film 30 is side-etched (FIG. 4).
(See (a)).

Next, the magnetoresistive film 15 is etched by ion milling using the alumina film 30 as a mask. Thus, the end of the magnetoresistive film 15 is formed in a tapered shape (see FIG. 4B). next,
An 800 nm-thick TiW film 19 is formed on the entire surface by sputtering (see FIG. 4C).

Next, lift-off is performed to remove the resist film 28.
At the same time, the alumina film 30 on the resist film 28 and the TiW
The film 19 is removed (see FIG. 5A). Next, the MR element 16 and the electrode 18 are formed by patterning the magnetoresistive film 15 and the TiW film 19.
(B)). Next, a gap insulating film 20 made of a silicon oxide film having a thickness of 50 nm is formed on the entire surface. In addition,
The gap insulating film 20 can be formed in the same manner as the gap insulating film 14 (see FIG. 5C).

Next, a 3.5 μm-thick FeNi film was formed on the entire surface.
A shield film 22 made of a film is formed. Next, on the whole surface,
A gap layer 24 having a thickness of 0.5 μm and made of an Al ₂ O ₃ film is formed (see FIG. 6A). Next, a 3 μm-thick FeNi film is formed on the gap layer 24.

Next, the write pole 26 made of the FeNi film is formed by patterning the FeNi film (see FIG. 6B). Thus, the thin-film magnetic head according to the present embodiment is formed. As described above, according to the present embodiment, since the gap insulating film is formed by the plasma CVD method in which the excitation frequency and the flow rate ratio of TEOS / O ₂ are set to appropriate values, the thin gap insulating film is formed by the CVD method at a low temperature. Is formed, it is possible to form a high-quality gap insulating film having a large dielectric strength without deteriorating the gap insulating film. Since a high-quality gap insulating film having a large dielectric strength can be formed thinly, the resolution of the thin-film magnetic head can be improved, thereby providing a thin-film magnetic head capable of coping with miniaturization of recording bits. .

[Modified Embodiment] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, in the above embodiment, the case where the present invention is applied to the gap insulating film of the thin-film magnetic head has been described as an example.
It can be applied to any use.

In the above embodiment, TEOS is used as the source gas. However, the source gas is not limited to TEOS.

[0055]

Embedded image

The alkoxysilane represented by the general formula (1) can be used.

[0057]

Embedded image

And tetramethoxysilane represented by the following structural formula:

[0059]

Embedded image

For example, tetraisopropoxysilane represented by the following formula can be used.

[0061]

As described above, according to the present invention, TEOS
Since the silicon oxide film is formed by the plasma CVD method in which the flow rate ratio of / O ₂ and the excitation frequency are set to appropriate values,
Even if a thin silicon oxide film is formed by a CVD method at a low temperature, the silicon oxide film is not degraded,
A high-quality silicon oxide film having a large dielectric strength can be formed.

Further, according to the present invention, the plasma C in which the flow rate ratio of TEOS / O ₂ and the excitation frequency are set to appropriate values is set.
Since the gap insulating film is formed by the VD method, C
Even when a thin gap insulating film is formed by the VD method, a high-quality gap insulating film having a large dielectric strength can be formed without deteriorating the gap insulating film. Since a high-quality gap insulating film having a large dielectric strength can be thinned, the resolution of the thin-film magnetic head can be improved, thereby providing a thin-film magnetic head that can cope with miniaturization of recording bits.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a thin-film magnetic head according to an embodiment of the present invention.

FIG. 2 is a process sectional view (part 1) illustrating the method for manufacturing the thin-film magnetic head according to the embodiment of the present invention.

FIG. 3 is a process sectional view (part 2) illustrating the method for manufacturing the thin-film magnetic head according to the embodiment of the present invention.

FIG. 4 is a process sectional view (part 3) illustrating the method for manufacturing the thin-film magnetic head according to the embodiment of the present invention.

FIG. 5 is a process sectional view (part 4) illustrating the method for manufacturing the thin-film magnetic head according to the embodiment of the present invention.

FIG. 6 is a process sectional view (part 5) illustrating the method for manufacturing the thin-film magnetic head according to the embodiment of the present invention.

7A and 7B are a cross-sectional view and a plan view showing a sample formed by imitating a thin-film magnetic head.

FIG. 8 is a graph showing the relationship between the flow rate ratio of TEOS / O ₂ and the average dielectric strength.

FIG. 9 is a graph showing a relationship between an excitation frequency and an average dielectric strength.

FIG. 10 is a sectional view showing a sample for measuring a pinhole density.

FIG. 11 is a graph showing a relationship between a flow rate ratio of TEOS / O ₂ and a pinhole density.

FIG. 12 is a graph showing a relationship between an excitation frequency and a pinhole density.

FIG. 13 is a sectional view showing a conventional thin-film magnetic head and a perspective view showing a section.

FIG. 14 is a schematic diagram when a thin-film magnetic head faces recording bits of a magnetic recording disk.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Substrate 12 ... Shield film 14 ... Gap insulation film 15 ... Magnetoresistance effect film 16 ... MR element 18 ... Electrode 19 ... TiW film 20 ... Gap insulation film 22 ... Shield film 24 ... Gap layer 26 ... Write pole 28 ... Resist film Reference Signs List 30 ... alumina film 32 ... resist film 32a ... resist mask 34 ... opening 110 ... silicon substrate 110a ... silicon substrate 112 ... electrode layer 112a ... metal layer 114 ... gap insulating film 114a ... gap insulating film 117 ... electrode layer 118 ... electrode 120 ... Gap insulating film 122 ... Electrode layer 150 ... Dielectric strength tester 200 ... Thin film magnetic head 200a ... Thin film magnetic head 210 ... Substrate 212 ... Shield film 212a ... Shield film 214 ... Gap insulating film 214a ... Gap insulating film 216 ... MR element 216a ... MR element 218 ... Electric 220 ... gap insulating film 220a ... gap insulating film 222 ... shield film 222a ... shielding film 224 ... gap layer 226 ... write pole 227 ... coil 250 ... recording bits

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA06 AA14 BA44 FA01 JA05 JA06 JA10 JA18 5D034 BA15 BB03 DA07 5F058 BA20 BC02 BD04 BD05 BF07 BF25 BF29 BF37 BF80 BH11

Claims (7)

[Claims] 1. A method for forming a silicon oxide film by a plasma CVD method using an organic silane gas and oxygen, wherein a flow ratio of the organic silane gas to oxygen is 0.0001 to 0.0001.
0.05 and the excitation frequency is 10 kHz to 150 kHz
Forming a silicon oxide film on a substrate. 2. The method for forming a silicon oxide film according to claim 1, wherein the temperature of the substrate is set to 170 ° C. to 250 ° C. to form the silicon oxide film. 3. The method for forming a silicon oxide film according to claim 1, wherein the organic silane gas has a structural formula: A method for forming a silicon oxide film, which is an alkoxysilane represented by the formula: 4. The method for forming a silicon oxide film according to claim 3, wherein the organic silane gas has a structural formula: A method for forming a silicon oxide film, wherein the method is tetraethoxysilane. 5. The method for forming a silicon oxide film according to claim 3, wherein the organic silane gas has a structural formula: A method for forming a silicon oxide film, which is tetramethoxysilane represented by the formula: 6. The method for forming a silicon oxide film according to claim 3, wherein the organic silane gas has a structural formula: A method for forming a silicon oxide film, wherein the silicon oxide film is tetraisopropoxysilane. 7. A first shield film forming step of forming a first shield film on a substrate, and a first silicon oxide film forming step of forming a first silicon oxide film on the first shield film Forming an MR element on the first silicon oxide film;
Forming an R element; forming a second silicon oxide film on the MR element and the first silicon oxide film; forming a second silicon oxide film on the MR element and the first silicon oxide film; A second shield film forming step of forming a second shield film. In the first or second silicon oxide film forming step, the flow ratio of the organosilane gas to oxygen is 0.0001 to 0.0001.
0.05 and the excitation frequency is 10 kHz to 150 kHz
As a plasma CV using an organic silane gas and oxygen
A method for manufacturing a thin-film magnetic head, wherein the first or second silicon oxide film is formed by Method D.