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ITUB20153500A1 - Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti - Google Patents

Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti

Info

Publication number
ITUB20153500A1
ITUB20153500A1 ITUB2015A003500A ITUB20153500A ITUB20153500A1 IT UB20153500 A1 ITUB20153500 A1 IT UB20153500A1 IT UB2015A003500 A ITUB2015A003500 A IT UB2015A003500A IT UB20153500 A ITUB20153500 A IT UB20153500A IT UB20153500 A1 ITUB20153500 A1 IT UB20153500A1
Authority
IT
Italy
Prior art keywords
procedure
equipment
data
transmitting power
insulation barrier
Prior art date
Application number
ITUB2015A003500A
Other languages
English (en)
Inventor
Egidio Ragonese
Nunzio Greco
Giuseppe Palmisano
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUB2015A003500A priority Critical patent/ITUB20153500A1/it
Priority to US15/138,702 priority patent/US10298408B2/en
Publication of ITUB20153500A1 publication Critical patent/ITUB20153500A1/it

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L12/00—Data switching networks
    • H04L12/02—Details
    • H04L12/10—Current supply arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1234—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device and comprising means for varying the output amplitude of the generator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B3/00—Line transmission systems
    • H04B3/54—Systems for transmission via power distribution lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0076—Power combination of several oscillators oscillating at the same frequency

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Near-Field Transmission Systems (AREA)
  • Dc Digital Transmission (AREA)
ITUB2015A003500A 2015-09-09 2015-09-09 Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti ITUB20153500A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITUB2015A003500A ITUB20153500A1 (it) 2015-09-09 2015-09-09 Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti
US15/138,702 US10298408B2 (en) 2015-09-09 2016-04-26 Method of transmitting power and data across a galvanic isolation barrier, corresponding system and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2015A003500A ITUB20153500A1 (it) 2015-09-09 2015-09-09 Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti

Publications (1)

Publication Number Publication Date
ITUB20153500A1 true ITUB20153500A1 (it) 2017-03-09

Family

ID=54542475

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2015A003500A ITUB20153500A1 (it) 2015-09-09 2015-09-09 Procedimento per trasmettere potenza e dati attraverso una barriera di isolamento galvanico, sistema ed apparecchiatura corrispondenti

Country Status (2)

Country Link
US (1) US10298408B2 (it)
IT (1) ITUB20153500A1 (it)

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JP6665825B2 (ja) * 2017-04-13 2020-03-13 株式会社豊田中央研究所 送信器及びマイクロ波電力伝送システム
CN108199821A (zh) * 2017-09-27 2018-06-22 青岛鼎信通讯股份有限公司 一种带隔离供电的磁耦半双工通讯集成电路
EP3512087B1 (en) 2018-01-12 2023-01-25 STMicroelectronics S.r.l. A galvanically isolated dc-dc converter circuit with data communication, corresponding system and corresponding method
EP3514928B1 (en) 2018-01-19 2021-03-03 Hamilton Sundstrand Corporation Gate driver
IT201800004174A1 (it) * 2018-04-03 2019-10-03 Circuito e sistema ad isolamento galvanico, procedimento corrispondente
US11296552B2 (en) * 2018-06-12 2022-04-05 Nanyang Technological University Transmitter device, wireless power transfer system, and methods of forming the same
US11443889B2 (en) 2019-06-24 2022-09-13 Texas Instruments Incorporated Data and power isolation barrier
US11507042B2 (en) * 2019-08-26 2022-11-22 Rockwell Automation Asia Pacific Business Centre Pte. Ltd. High current and power limiting circuit for I/O modules with internal output power support
US11515839B2 (en) * 2020-11-02 2022-11-29 Texas Instruments Incorporated Isolated power transfer via coupled oscillators
US11670967B1 (en) * 2022-05-09 2023-06-06 Hamilton Sundstrand Corporation Multi-environmental circuit devices

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Also Published As

Publication number Publication date
US10298408B2 (en) 2019-05-21
US20170070354A1 (en) 2017-03-09

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