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ITUB20152264A1 - Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione - Google Patents

Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Info

Publication number
ITUB20152264A1
ITUB20152264A1 ITUB2015A002264A ITUB20152264A ITUB20152264A1 IT UB20152264 A1 ITUB20152264 A1 IT UB20152264A1 IT UB2015A002264 A ITUB2015A002264 A IT UB2015A002264A IT UB20152264 A ITUB20152264 A IT UB20152264A IT UB20152264 A1 ITUB20152264 A1 IT UB20152264A1
Authority
IT
Italy
Prior art keywords
emission
light
porous silicon
related manufacturing
manufacturing
Prior art date
Application number
ITUB2015A002264A
Other languages
English (en)
Inventor
Marco Morelli
Fabrizio Fausto Renzo Toia
Giuseppe Barillaro
Marco Sambi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUB2015A002264A priority Critical patent/ITUB20152264A1/it
Priority to CN201620147583.5U priority patent/CN205752219U/zh
Priority to CN201610108591.3A priority patent/CN106356434B/zh
Priority to US15/087,183 priority patent/US10002990B2/en
Priority to EP16175646.5A priority patent/EP3118905B1/en
Publication of ITUB20152264A1 publication Critical patent/ITUB20152264A1/it
Priority to US15/983,959 priority patent/US10825954B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
ITUB2015A002264A 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione ITUB20152264A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
CN201620147583.5U CN205752219U (zh) 2015-07-17 2016-02-26 多孔硅发光器件
CN201610108591.3A CN106356434B (zh) 2015-07-17 2016-02-26 多孔硅发光器件及其制造方法
US15/087,183 US10002990B2 (en) 2015-07-17 2016-03-31 Porous-silicon light-emitting device and manufacturing method thereof
EP16175646.5A EP3118905B1 (en) 2015-07-17 2016-06-22 Porous-silicon light-emitting device and manufacturing method thereof
US15/983,959 US10825954B2 (en) 2015-07-17 2018-05-18 Porous-silicon light-emitting device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Publications (1)

Publication Number Publication Date
ITUB20152264A1 true ITUB20152264A1 (it) 2017-01-17

Family

ID=54200023

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Country Status (4)

Country Link
US (2) US10002990B2 (it)
EP (1) EP3118905B1 (it)
CN (2) CN205752219U (it)
IT (1) ITUB20152264A1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITUB20152264A1 (it) 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
KR102651596B1 (ko) 2018-06-29 2024-03-27 삼성디스플레이 주식회사 표시장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537013A (ja) * 1991-07-30 1993-02-12 Nippondenso Co Ltd 注入形発光素子及びその製造方法
JPH0555627A (ja) * 1991-08-27 1993-03-05 Nippondenso Co Ltd 注入形発光素子

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8711373D0 (en) * 1987-05-14 1987-06-17 Secr Defence Electroluminescent silicon device
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
EP0563625A3 (en) * 1992-04-03 1994-05-25 Ibm Immersion scanning system for fabricating porous silicon films and devices
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
US5272355A (en) * 1992-05-20 1993-12-21 Spire Corporation Optoelectronic switching and display device with porous silicon
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon
JPH06338631A (ja) * 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
DE4342527A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Juelich Gmbh Verfahren zum elektrischen Kontaktieren von porösem Silizium
JP2985691B2 (ja) * 1994-03-23 1999-12-06 株式会社デンソー 半導体装置
JPH08148280A (ja) * 1994-04-14 1996-06-07 Toshiba Corp 半導体装置およびその製造方法
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
US6017773A (en) * 1997-04-04 2000-01-25 University Of Rochester Stabilizing process for porous silicon and resulting light emitting device
US6225647B1 (en) * 1998-07-27 2001-05-01 Kulite Semiconductor Products, Inc. Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
JP3688970B2 (ja) * 2000-02-29 2005-08-31 株式会社日立製作所 薄膜型電子源を用いた表示装置及びその製造方法
US7468529B2 (en) * 2002-07-11 2008-12-23 Sumitomo Electric Industries, Ltd. Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particles
KR100499499B1 (ko) * 2002-12-26 2005-07-05 엘지전자 주식회사 상업용 전자 레인지
CN1954640B (zh) * 2004-04-28 2011-07-27 松下电工株式会社 压力波产生装置及其制造方法
FR2991504A1 (fr) * 2012-05-30 2013-12-06 St Microelectronics Tours Sas Composant de puissance vertical haute tension
FR3012256A1 (fr) * 2013-10-17 2015-04-24 St Microelectronics Tours Sas Composant de puissance vertical haute tension
US9564550B2 (en) * 2013-10-28 2017-02-07 Infineon Technologies Dresden Gmbh Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier
ITUB20152264A1 (it) * 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537013A (ja) * 1991-07-30 1993-02-12 Nippondenso Co Ltd 注入形発光素子及びその製造方法
JPH0555627A (ja) * 1991-08-27 1993-03-05 Nippondenso Co Ltd 注入形発光素子

Also Published As

Publication number Publication date
EP3118905A1 (en) 2017-01-18
US20180269357A1 (en) 2018-09-20
US10825954B2 (en) 2020-11-03
US20170018683A1 (en) 2017-01-19
US10002990B2 (en) 2018-06-19
EP3118905B1 (en) 2019-10-30
CN106356434A (zh) 2017-01-25
CN205752219U (zh) 2016-11-30
CN106356434B (zh) 2018-12-25

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