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ITRM20010524A0 - Struttura a schiera di memoria flash. - Google Patents

Struttura a schiera di memoria flash.

Info

Publication number
ITRM20010524A0
ITRM20010524A0 IT2001RM000524A ITRM20010524A ITRM20010524A0 IT RM20010524 A0 ITRM20010524 A0 IT RM20010524A0 IT 2001RM000524 A IT2001RM000524 A IT 2001RM000524A IT RM20010524 A ITRM20010524 A IT RM20010524A IT RM20010524 A0 ITRM20010524 A0 IT RM20010524A0
Authority
IT
Italy
Prior art keywords
flash memory
terraced structure
terraced
flash
memory
Prior art date
Application number
IT2001RM000524A
Other languages
English (en)
Inventor
Girolamo Gallo
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000524A priority Critical patent/ITRM20010524A1/it
Publication of ITRM20010524A0 publication Critical patent/ITRM20010524A0/it
Priority to US10/231,449 priority patent/US6697284B2/en
Publication of ITRM20010524A1 publication Critical patent/ITRM20010524A1/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/12Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IT2001RM000524A 2001-08-30 2001-08-30 Struttura a schiera di memoria flash. ITRM20010524A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2001RM000524A ITRM20010524A1 (it) 2001-08-30 2001-08-30 Struttura a schiera di memoria flash.
US10/231,449 US6697284B2 (en) 2001-08-30 2002-08-29 Flash memory array structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000524A ITRM20010524A1 (it) 2001-08-30 2001-08-30 Struttura a schiera di memoria flash.

Publications (2)

Publication Number Publication Date
ITRM20010524A0 true ITRM20010524A0 (it) 2001-08-30
ITRM20010524A1 ITRM20010524A1 (it) 2003-02-28

Family

ID=11455753

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000524A ITRM20010524A1 (it) 2001-08-30 2001-08-30 Struttura a schiera di memoria flash.

Country Status (2)

Country Link
US (1) US6697284B2 (it)
IT (1) ITRM20010524A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20010516A1 (it) 2001-08-29 2003-02-28 Micron Technology Inc Architettura a schiera di memorie flash.
US7210002B2 (en) * 2003-11-19 2007-04-24 Qualcomm Incorporated System and method for operating dual bank read-while-write flash
US7263027B2 (en) * 2004-10-14 2007-08-28 Broadcom Corporation Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features
US7268023B2 (en) * 2005-05-05 2007-09-11 Micron Technology, Inc. Method of forming a pseudo SOI substrate and semiconductor devices
US8578084B2 (en) * 2009-04-08 2013-11-05 Google Inc. Data storage device having multiple removable memory boards
US20100287217A1 (en) * 2009-04-08 2010-11-11 Google Inc. Host control of background garbage collection in a data storage device
US8433845B2 (en) * 2009-04-08 2013-04-30 Google Inc. Data storage device which serializes memory device ready/busy signals
US20100262979A1 (en) * 2009-04-08 2010-10-14 Google Inc. Circular command queues for communication between a host and a data storage device
KR101997623B1 (ko) * 2013-02-26 2019-07-09 삼성전자주식회사 메모리 장치 및 그것을 포함하는 메모리 시스템
JP6122478B1 (ja) * 2015-10-22 2017-04-26 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
US11335402B2 (en) 2018-12-19 2022-05-17 Micron Technology, Inc. Systems and techniques for accessing multiple memory cells concurrently

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384745A (en) 1992-04-27 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device
JP3346827B2 (ja) 1993-05-25 2002-11-18 三菱電機株式会社 同期型半導体記憶装置
JPH09288888A (ja) * 1996-04-22 1997-11-04 Mitsubishi Electric Corp 半導体記憶装置
KR100313503B1 (ko) * 1999-02-12 2001-11-07 김영환 멀티-뱅크 메모리 어레이를 갖는 반도체 메모리 장치
US6459645B2 (en) * 1999-09-30 2002-10-01 Intel Corporation VPX bank architecture

Also Published As

Publication number Publication date
US20030058689A1 (en) 2003-03-27
US6697284B2 (en) 2004-02-24
ITRM20010524A1 (it) 2003-02-28

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