ITMI981831A1 - CRYSTAL LASER SYSTEM SYSTEM FOR NON-SUPERFICIAL SINGLE, BI AND THREE-DIMENSIONAL ENGRAVING BY MEANS OF LASER WITHOUT SUPERFICIAL SCRATCHING OF THE - Google Patents
CRYSTAL LASER SYSTEM SYSTEM FOR NON-SUPERFICIAL SINGLE, BI AND THREE-DIMENSIONAL ENGRAVING BY MEANS OF LASER WITHOUT SUPERFICIAL SCRATCHING OF THE Download PDFInfo
- Publication number
- ITMI981831A1 ITMI981831A1 IT98MI001831A ITMI981831A ITMI981831A1 IT MI981831 A1 ITMI981831 A1 IT MI981831A1 IT 98MI001831 A IT98MI001831 A IT 98MI001831A IT MI981831 A ITMI981831 A IT MI981831A IT MI981831 A1 ITMI981831 A1 IT MI981831A1
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- Italy
- Prior art keywords
- laser
- superficial
- scratching
- crystal
- dimensional engraving
- Prior art date
Links
- 238000006748 scratching Methods 0.000 title claims description 3
- 230000002393 scratching effect Effects 0.000 title claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000005304 optical glass Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
DESCRIZIONE DI UNA INVENZIONE DESCRIPTION OF AN INVENTION
Riassunto Summary
Sistema CRYSTAL LASER, impianto per incisione non superficiale , mono bi tridimensionale a mezzo di laser senza scalfitura superficiale del CRYSTAL LASER system, implant for non-superficial, mono two-dimensional laser engraving without surface scratching of the
vetro o cristallo ; L ' impianto è costituito da un laser di grande potenza a modulazione di frequenza che funziona con un granato di alluminio ed ittrio.noche un sistema preciso di scansione con un raggio laser ed unità di controllo automatico del processo di incisione profonda. glass or crystal; The plant consists of a high power frequency modulated laser which works with an aluminum and yttrium garnet, as well as a precise scanning system with a laser beam and an automatic control unit for the deep engraving process.
DESCRIZIONE DESCRIPTION
L ' impianto è costituito da un laser infrarosso di grande potenza a modulazione di frequenza che fuziona con un granato di alluminio e ittrio nonché un sistema preciso di scansione con un raggio laser e unità di control lo automatico del processo di incisione. Le caratteristiche paricolari dell ' impianto sono : riproduzione alta di energia della radiazione laser ed omogeneità della lavorazione. Secondo il tipo della incisione l ' energia della radiazione laser può ' ampiamente variare . The system consists of a high power frequency modulated infrared laser which works with an aluminum and yttrium garnet as well as a precise scanning system with a laser beam and an automatic control unit for the engraving process. The particular characteristics of the plant are: high energy reproduction of the laser radiation and homogeneity of the processing. Depending on the type of engraving, the energy of the laser radiation can vary widely.
A mezzo computer si procede alla preparazione per punti dell ' immagine da ripro durre mono bi o tridimensionalmente .Dopo l ' installazione del software di controllo tutto il processodi incisione viene effettuato automaticamente. A computer is used to prepare the image by points to be reproduced in mono, bi or tridimensional. After the installation of the control software, the whole engraving process is carried out automatically.
Per l'applicazione del disegno, un pezzo di vetro, vetro ottico o cristallo, viene fissato sul tavolo del sistema di movimento verticale. La posizione del pezzo in rapporto al raggio del laser ad impulsi viene determinata secondo il punto del laser pilota a gas di potenza ridotta radiante nella gamma visibile dello spettro eleettromagneetico . L'asse ottico dello stesso coincide con la linea di collimazione del laser infrarosso principale ad impulsi . For the application of the design, a piece of glass, optical glass or crystal, is fixed on the table of the vertical movement system. The position of the workpiece in relation to the pulsed laser beam is determined according to the point of the low-power gas pilot laser in the visible range of the electromagnetic spectrum. The optical axis of the same coincides with the line of sight of the main pulsed infrared laser.
Il processo della formazione dell'immagine viene controllato dal computer. L'interazione delle parti ed unità dell'impianto viene sincronizzato tramite un interfaccia speciale da installare su computer di qualsiasi tipo. The process of image formation is controlled by the computer. The interaction of the parts and units of the system is synchronized through a special interface to be installed on any type of computer.
Il software dell'impianto comprende il programma di controllo delle macchine ed una serie di programmi per la preparazione delle immagini. The plant software includes the machine control program and a series of programs for image preparation.
Nel caso di applicazione di un'immagine piatta l'impianto garantisce una perfetta risoluzione. La risoluzione spaziale dipenderà dalle dimensioni dell'incisione creata dal laser all'interno del pezzo di materiale lavorato (visualmente percepito come un punto dell'immagine). In the case of applying a flat image, the implant guarantees perfect resolution. The spatial resolution will depend on the size of the incision created by the laser inside the piece of material being processed (visually perceived as a point in the image).
E' prevista la possibilità di modificare automaticamente le dimensioni delle incisioni e la distanza fra ogni singola incisione che compone le immagini che si vogliono ottenere. It is possible to automatically modify the dimensions of the engravings and the distance between each single engraving that makes up the images to be obtained.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98MI001831A ITMI981831A1 (en) | 1998-08-04 | 1998-08-04 | CRYSTAL LASER SYSTEM SYSTEM FOR NON-SUPERFICIAL SINGLE, BI AND THREE-DIMENSIONAL ENGRAVING BY MEANS OF LASER WITHOUT SUPERFICIAL SCRATCHING OF THE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98MI001831A ITMI981831A1 (en) | 1998-08-04 | 1998-08-04 | CRYSTAL LASER SYSTEM SYSTEM FOR NON-SUPERFICIAL SINGLE, BI AND THREE-DIMENSIONAL ENGRAVING BY MEANS OF LASER WITHOUT SUPERFICIAL SCRATCHING OF THE |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI981831A0 ITMI981831A0 (en) | 1998-08-04 |
ITMI981831A1 true ITMI981831A1 (en) | 2000-02-04 |
Family
ID=11380609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT98MI001831A ITMI981831A1 (en) | 1998-08-04 | 1998-08-04 | CRYSTAL LASER SYSTEM SYSTEM FOR NON-SUPERFICIAL SINGLE, BI AND THREE-DIMENSIONAL ENGRAVING BY MEANS OF LASER WITHOUT SUPERFICIAL SCRATCHING OF THE |
Country Status (1)
Country | Link |
---|---|
IT (1) | ITMI981831A1 (en) |
-
1998
- 1998-08-04 IT IT98MI001831A patent/ITMI981831A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
ITMI981831A0 (en) | 1998-08-04 |
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