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ITMI921562A1 - Wafer semiconduttore e suo procedimento di fabbricazione - Google Patents

Wafer semiconduttore e suo procedimento di fabbricazione

Info

Publication number
ITMI921562A1
ITMI921562A1 IT001562A ITMI921562A ITMI921562A1 IT MI921562 A1 ITMI921562 A1 IT MI921562A1 IT 001562 A IT001562 A IT 001562A IT MI921562 A ITMI921562 A IT MI921562A IT MI921562 A1 ITMI921562 A1 IT MI921562A1
Authority
IT
Italy
Prior art keywords
manufacturing process
semiconductor wafer
wafer
semiconductor
manufacturing
Prior art date
Application number
IT001562A
Other languages
English (en)
Inventor
Jeungwoo Lee
Myoungseob Shim
Hoenjong Shin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921562A0 publication Critical patent/ITMI921562A0/it
Publication of ITMI921562A1 publication Critical patent/ITMI921562A1/it
Application granted granted Critical
Publication of IT1255174B publication Critical patent/IT1255174B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ITMI921562A 1991-06-27 1992-06-25 Wafer semiconduttore e suo procedimento di fabbricazione IT1255174B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010829A KR930001371A (ko) 1991-06-27 1991-06-27 반도체 제조용 기판 및 그 형성방법

Publications (3)

Publication Number Publication Date
ITMI921562A0 ITMI921562A0 (it) 1992-06-25
ITMI921562A1 true ITMI921562A1 (it) 1993-12-25
IT1255174B IT1255174B (it) 1995-10-20

Family

ID=19316427

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921562A IT1255174B (it) 1991-06-27 1992-06-25 Wafer semiconduttore e suo procedimento di fabbricazione

Country Status (7)

Country Link
US (1) US5300816A (it)
JP (1) JPH06204401A (it)
KR (1) KR930001371A (it)
DE (1) DE4220721A1 (it)
FR (1) FR2678427A1 (it)
GB (1) GB2257298A (it)
IT (1) IT1255174B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894165B2 (ja) * 1993-07-24 1999-05-24 ヤマハ株式会社 半導体装置
JP2755131B2 (ja) * 1993-10-27 1998-05-20 日本電気株式会社 半導体装置
US5686171A (en) * 1993-12-30 1997-11-11 Vlsi Technology, Inc. Integrated circuit scribe line structures and methods for making same
US5861660A (en) * 1995-08-21 1999-01-19 Stmicroelectronics, Inc. Integrated-circuit die suitable for wafer-level testing and method for forming the same
US5700732A (en) 1996-08-02 1997-12-23 Micron Technology, Inc. Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
US6197645B1 (en) 1997-04-21 2001-03-06 Advanced Micro Devices, Inc. Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewalls
JP3132451B2 (ja) * 1998-01-21 2001-02-05 日本電気株式会社 半導体装置およびその製造方法
US6441465B2 (en) 1999-02-09 2002-08-27 Winbond Electronics Corp. Scribe line structure for preventing from damages thereof induced during fabrication
JP2000294771A (ja) * 1999-04-02 2000-10-20 Fuji Electric Co Ltd プレーナ型半導体装置
WO2003038880A1 (fr) * 2001-10-31 2003-05-08 Mitsuboshi Diamond Industrial Co., Ltd. Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe
US7829462B2 (en) * 2007-05-03 2010-11-09 Teledyne Licensing, Llc Through-wafer vias
US8263496B1 (en) * 2011-04-12 2012-09-11 Tokyo Electron Limited Etching method for preparing a stepped structure
TWI467757B (zh) * 2013-08-02 2015-01-01 Chipbond Technology Corp 半導體結構
TWI467711B (zh) * 2013-09-10 2015-01-01 Chipbond Technology Corp 半導體結構

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3707760A (en) * 1971-05-19 1973-01-02 Sieburg Ind Inc Method and device for article working such as fracturing of semiconductor slices and separating semiconductor chips
JPS5467370A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Mos semiconductor device
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same
JPS6428827A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Manufacture of semiconductor device
JPH01120029A (ja) * 1987-11-02 1989-05-12 Seiko Epson Corp 半導体製造装置のスクライブ構造
JPH0821559B2 (ja) * 1988-02-12 1996-03-04 三菱電機株式会社 半導体集積回路装置の製造方法
JPH027431A (ja) * 1988-06-27 1990-01-11 Oki Electric Ind Co Ltd 半導体装置
JPH0237747A (ja) * 1988-07-28 1990-02-07 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
JPH03185750A (ja) * 1989-12-14 1991-08-13 Victor Co Of Japan Ltd 半導体装置
JPH1028827A (ja) * 1996-07-19 1998-02-03 Mitsubishi Heavy Ind Ltd 除塵装置

Also Published As

Publication number Publication date
GB9213586D0 (en) 1992-08-12
ITMI921562A0 (it) 1992-06-25
DE4220721A1 (de) 1993-01-14
IT1255174B (it) 1995-10-20
KR930001371A (ko) 1993-01-16
JPH06204401A (ja) 1994-07-22
FR2678427A1 (fr) 1992-12-31
GB2257298A (en) 1993-01-06
US5300816A (en) 1994-04-05

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Legal Events

Date Code Title Description
0001 Granted