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ITMI913208A0 - Strutturas di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita' - Google Patents

Strutturas di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita'

Info

Publication number
ITMI913208A0
ITMI913208A0 IT91MI3208A ITMI913208A ITMI913208A0 IT MI913208 A0 ITMI913208 A0 IT MI913208A0 IT 91MI3208 A IT91MI3208 A IT 91MI3208A IT MI913208 A ITMI913208 A IT MI913208A IT MI913208 A0 ITMI913208 A0 IT MI913208A0
Authority
IT
Italy
Prior art keywords
heat sink
semiconductor device
electrical connection
high reliability
plastic body
Prior art date
Application number
IT91MI3208A
Other languages
English (en)
Inventor
Paolo Casati
Marziano Cormo
Giuseppe Marchisi
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT91MI3208 priority Critical patent/IT1252136B/it
Publication of ITMI913208A0 publication Critical patent/ITMI913208A0/it
Priority to DE69223021T priority patent/DE69223021T2/de
Priority to EP19920115760 priority patent/EP0545007B1/en
Priority to JP4275690A priority patent/JPH05283462A/ja
Priority to US07/982,314 priority patent/US5338971A/en
Publication of ITMI913208A1 publication Critical patent/ITMI913208A1/it
Priority to US08/289,773 priority patent/US5763296A/en
Application granted granted Critical
Publication of IT1252136B publication Critical patent/IT1252136B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
IT91MI3208 1991-11-21 1991-11-29 Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita' IT1252136B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT91MI3208 IT1252136B (it) 1991-11-29 1991-11-29 Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita'
DE69223021T DE69223021T2 (de) 1991-11-29 1992-09-15 Halbleiteranordnung mit Wärmesenke und Kunststoffkörper und hochzuverlässige Mittel zur elektrischen Verbindung mit der Wärmesenke
EP19920115760 EP0545007B1 (en) 1991-11-29 1992-09-15 A semiconductor device structure having a heat-sink and a plastics body, and highly reliable means of electrical connection to the heat-sink
JP4275690A JPH05283462A (ja) 1991-11-29 1992-10-14 ヒートシンクとプラスチック本体を有する半導体デバイスの構造
US07/982,314 US5338971A (en) 1991-11-29 1992-11-27 Electronic device structure with studs locating lead frame on backing plate
US08/289,773 US5763296A (en) 1991-11-21 1994-08-12 Method for fabricating an electronic device structure with studs locating lead frame on backing plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT91MI3208 IT1252136B (it) 1991-11-29 1991-11-29 Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita'

Publications (3)

Publication Number Publication Date
ITMI913208A0 true ITMI913208A0 (it) 1991-11-29
ITMI913208A1 ITMI913208A1 (it) 1993-05-29
IT1252136B IT1252136B (it) 1995-06-05

Family

ID=11361225

Family Applications (1)

Application Number Title Priority Date Filing Date
IT91MI3208 IT1252136B (it) 1991-11-21 1991-11-29 Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita'

Country Status (5)

Country Link
US (2) US5338971A (it)
EP (1) EP0545007B1 (it)
JP (1) JPH05283462A (it)
DE (1) DE69223021T2 (it)
IT (1) IT1252136B (it)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088193B2 (ja) * 1992-06-05 2000-09-18 三菱電機株式会社 Ｌｏｃ構造を有する半導体装置の製造方法並びにこれに使用するリードフレーム
KR940016724A (ko) * 1992-12-03 1994-07-23 빈센트 비. 인그라시아 표면 실장형 집적 회로 파워 패키지용 리드 프레임 어셈블리
JPH0714976A (ja) * 1993-06-24 1995-01-17 Shinko Electric Ind Co Ltd リードフレーム及び半導体装置
DE4419060A1 (de) * 1994-05-31 1995-12-07 Siemens Ag Einrichtung zum Kühlen eines IC
EP0698922B1 (en) * 1994-08-12 2001-06-06 STMicroelectronics S.r.l. Leadframe for supporting integrated semiconductor devices
US5701090A (en) * 1994-11-15 1997-12-23 Mitsubishi Denki Kabushiki Kaisha Data output circuit with reduced output noise
KR100206880B1 (ko) * 1995-12-29 1999-07-01 구본준 히트싱크가 부착된 컬럼형 패키지
US5608359A (en) * 1995-10-10 1997-03-04 Motorola, Inc. Function-differentiated temperature compensated crystal oscillator and method of producing the same
DE19625384A1 (de) * 1996-06-25 1998-01-02 Siemens Ag Zusammengesetzter Leiterrahmen
US5798570A (en) * 1996-06-28 1998-08-25 Kabushiki Kaisha Gotoh Seisakusho Plastic molded semiconductor package with thermal dissipation means
US5739586A (en) * 1996-08-30 1998-04-14 Scientific-Atlanta, Inc. Heat sink assembly including a printed wiring board and a metal case
DE69636853T2 (de) 1996-11-27 2007-11-08 Stmicroelectronics S.R.L., Agrate Brianza Herstellunsgverfahren einer Kunststoffpackung für elektronische Anordnungen mit einer Wärmesenke
US6861735B2 (en) * 1997-06-27 2005-03-01 Matsushita Electric Industrial Co., Ltd. Resin molded type semiconductor device and a method of manufacturing the same
JPH11145364A (ja) * 1997-11-12 1999-05-28 Denso Corp 樹脂封止型半導体装置及びその製造方法
US5930604A (en) * 1998-02-02 1999-07-27 Delco Electronics Corporation Encapsulation method for fine-pitch chip-on-board
US6323060B1 (en) 1999-05-05 2001-11-27 Dense-Pac Microsystems, Inc. Stackable flex circuit IC package and method of making same
JP5214082B2 (ja) * 2001-07-25 2013-06-19 インヴェンサス・コーポレイション 半導体装置
GB0123676D0 (en) * 2001-10-02 2001-11-21 Poly Flex Circuits Ltd Method of manufacturing circuits
US20030234443A1 (en) 2001-10-26 2003-12-25 Staktek Group, L.P. Low profile stacking system and method
US7371609B2 (en) 2001-10-26 2008-05-13 Staktek Group L.P. Stacked module systems and methods
US7053478B2 (en) 2001-10-26 2006-05-30 Staktek Group L.P. Pitch change and chip scale stacking system
US7026708B2 (en) * 2001-10-26 2006-04-11 Staktek Group L.P. Low profile chip scale stacking system and method
US6956284B2 (en) 2001-10-26 2005-10-18 Staktek Group L.P. Integrated circuit stacking system and method
US6940729B2 (en) 2001-10-26 2005-09-06 Staktek Group L.P. Integrated circuit stacking system and method
US6914324B2 (en) 2001-10-26 2005-07-05 Staktek Group L.P. Memory expansion and chip scale stacking system and method
US7656678B2 (en) 2001-10-26 2010-02-02 Entorian Technologies, Lp Stacked module systems
US7310458B2 (en) 2001-10-26 2007-12-18 Staktek Group L.P. Stacked module systems and methods
US7485951B2 (en) 2001-10-26 2009-02-03 Entorian Technologies, Lp Modularized die stacking system and method
US20060255446A1 (en) 2001-10-26 2006-11-16 Staktek Group, L.P. Stacked modules and method
US7202555B2 (en) 2001-10-26 2007-04-10 Staktek Group L.P. Pitch change and chip scale stacking system and method
US7081373B2 (en) 2001-12-14 2006-07-25 Staktek Group, L.P. CSP chip stack with flex circuit
US7542304B2 (en) 2003-09-15 2009-06-02 Entorian Technologies, Lp Memory expansion and integrated circuit stacking system and method
US6849941B1 (en) * 2004-01-07 2005-02-01 Thermagon, Inc. Heat sink and heat spreader assembly
US7309914B2 (en) 2005-01-20 2007-12-18 Staktek Group L.P. Inverted CSP stacking system and method
US7033861B1 (en) 2005-05-18 2006-04-25 Staktek Group L.P. Stacked module systems and method
US7417310B2 (en) 2006-11-02 2008-08-26 Entorian Technologies, Lp Circuit module having force resistant construction
WO2009081356A2 (en) * 2007-12-19 2009-07-02 Nxp B.V. Non-substrate type package with embedded power line
CN101673722A (zh) * 2008-09-10 2010-03-17 日月光半导体制造股份有限公司 导线架
US9093446B2 (en) 2013-01-21 2015-07-28 International Business Machines Corporation Chip stack with electrically insulating walls
US8995933B2 (en) 2013-06-21 2015-03-31 Motorola Solutions, Inc. Radio frequency transistor and matching circuit grounding and thermal management apparatus
JP2016174049A (ja) * 2015-03-16 2016-09-29 株式会社東芝 リードフレーム構造体、リードフレーム構造体の製造方法、および半導体装置
US10076800B2 (en) 2015-11-30 2018-09-18 Cree Fayetteville, Inc. Method and device for a high temperature vacuum-safe solder stop utilizing laser processing of solderable surfaces for an electronic module assembly
US20210063099A1 (en) 2019-08-28 2021-03-04 Carbice Corporation Flexible and conformable polymer-based heat sinks and methods of making and using thereof
USD903610S1 (en) 2019-08-28 2020-12-01 Carbice Corporation Flexible heat sink
USD906269S1 (en) 2019-08-28 2020-12-29 Carbice Corporation Flexible heat sink
USD904322S1 (en) 2019-08-28 2020-12-08 Carbice Corporation Flexible heat sink
JP7388912B2 (ja) * 2019-12-23 2023-11-29 ダイヤゼブラ電機株式会社 イグナイタ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455169A (en) * 1977-10-12 1979-05-02 Nec Corp Semiconductor device
US4132856A (en) * 1977-11-28 1979-01-02 Burroughs Corporation Process of forming a plastic encapsulated molded film carrier CML package and the package formed thereby
US4215360A (en) * 1978-11-09 1980-07-29 General Motors Corporation Power semiconductor device assembly having a lead frame with interlock members
JPS551195A (en) * 1979-05-21 1980-01-07 Hitachi Ltd Lead frame header connection body
GB2199988B (en) * 1987-01-12 1990-04-25 Intel Corp Multi-layer molded plastic ic package
JPH02306639A (ja) * 1989-05-22 1990-12-20 Toshiba Corp 半導体装置の樹脂封入方法
US4975761A (en) * 1989-09-05 1990-12-04 Advanced Micro Devices, Inc. High performance plastic encapsulated package for integrated circuit die
IT1247649B (it) * 1990-10-31 1994-12-28 Sgs Thomson Microelectronics Procedimento di incapsulamento in resina di un dispositivo a semiconduttore di potenza montato su dissipatore allontanando i reofori dal dissipatore mediante l'azione del controstampo in fase di chiusura dello stampo
IT1250405B (it) * 1991-01-31 1995-04-07 Sgs Thomson Microelectronics Piastrina metallica di dissipazione del calore di un dispositivo a semiconduttore di potenza incapsulato in resina fornita di rilievi per la saldatura dei fili di massa

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US5338971A (en) 1994-08-16
IT1252136B (it) 1995-06-05
DE69223021D1 (de) 1997-12-11
EP0545007B1 (en) 1997-11-05
JPH05283462A (ja) 1993-10-29
ITMI913208A1 (it) 1993-05-29
US5763296A (en) 1998-06-09
EP0545007A1 (en) 1993-06-09
DE69223021T2 (de) 1998-02-26

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