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ITMI20011120A0 - SILICON WAFERS HAVING CONTROLLED DEFECT DISTRIBUTION, DEFECT PREPARATION METHODS, AND CZOCHRALSKI EXTRACTOR FOR THE FACTORY - Google Patents

SILICON WAFERS HAVING CONTROLLED DEFECT DISTRIBUTION, DEFECT PREPARATION METHODS, AND CZOCHRALSKI EXTRACTOR FOR THE FACTORY

Info

Publication number
ITMI20011120A0
ITMI20011120A0 IT2001MI001120A ITMI20011120A ITMI20011120A0 IT MI20011120 A0 ITMI20011120 A0 IT MI20011120A0 IT 2001MI001120 A IT2001MI001120 A IT 2001MI001120A IT MI20011120 A ITMI20011120 A IT MI20011120A IT MI20011120 A0 ITMI20011120 A0 IT MI20011120A0
Authority
IT
Italy
Prior art keywords
defect
czochralski
extractor
factory
preparation methods
Prior art date
Application number
IT2001MI001120A
Other languages
Italian (it)
Inventor
Jea-Gun Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2000-0057344A external-priority patent/KR100378184B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20011120A0 publication Critical patent/ITMI20011120A0/en
Publication of ITMI20011120A1 publication Critical patent/ITMI20011120A1/en

Links

IT2001MI001120A 2000-09-29 2001-05-25 SILICON WAFERS HAVING CONTROLLED DISTRIBUTION OF DEFECTS, METHODS OF PREPARING THEMSELVES, AND CZOCHRALSKI EXTRACTORS FOR THE FACTORY ITMI20011120A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0057344A KR100378184B1 (en) 1999-11-13 2000-09-29 Silicon wafer having controlled distribution of defects, process for the preparation of the same and czochralski puller for manufacturing monocrystalline silicon ingot

Publications (2)

Publication Number Publication Date
ITMI20011120A0 true ITMI20011120A0 (en) 2001-05-25
ITMI20011120A1 ITMI20011120A1 (en) 2002-11-25

Family

ID=36772732

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001MI001120A ITMI20011120A1 (en) 2000-09-29 2001-05-25 SILICON WAFERS HAVING CONTROLLED DISTRIBUTION OF DEFECTS, METHODS OF PREPARING THEMSELVES, AND CZOCHRALSKI EXTRACTORS FOR THE FACTORY

Country Status (4)

Country Link
CN (2) CN1289720C (en)
IT (1) ITMI20011120A1 (en)
MY (1) MY131022A (en)
SG (2) SG135030A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853027B2 (en) * 2006-01-17 2012-01-11 信越半導体株式会社 Method for producing silicon single crystal wafer
TWI580825B (en) * 2012-01-27 2017-05-01 Memc新加坡有限公司 Method of preparing cast silicon by directional solidification
JP6100226B2 (en) * 2014-11-26 2017-03-22 信越半導体株式会社 Heat treatment method for silicon single crystal wafer
KR101759876B1 (en) * 2015-07-01 2017-07-31 주식회사 엘지실트론 Wafer and method for analyzing defect of the wafer
KR102626492B1 (en) * 2016-11-14 2024-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 Manufacturing method of high photoelectric conversion efficiency solar cell and high photoelectric conversion efficiency solar cell

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63315589A (en) * 1987-06-16 1988-12-23 Osaka Titanium Seizo Kk Single crystal production apparatus
FI901414A0 (en) * 1989-03-30 1990-03-21 Nippon Kokan Kk ANORDINATION FOR FRAMING A KISELENKRISTALLER.
KR960006262B1 (en) * 1990-03-20 1996-05-13 닛뽕 고오깡 가부시기가이샤 Silicon single crystal manufacturing device
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
JPH0761889A (en) * 1993-08-26 1995-03-07 Komatsu Electron Metals Co Ltd Semiconductor single crystal pull device and method fir pulling semiconductor single crystal
JPH1179889A (en) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby
JP3992800B2 (en) * 1997-09-22 2007-10-17 Sumco Techxiv株式会社 Single crystal manufacturing apparatus and single crystal manufacturing method
JP4166316B2 (en) * 1998-02-27 2008-10-15 Sumco Techxiv株式会社 Single crystal manufacturing equipment
JP3670493B2 (en) * 1998-10-09 2005-07-13 東芝セラミックス株式会社 Single crystal pulling device
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
JP3709494B2 (en) * 1999-02-26 2005-10-26 株式会社Sumco Heat shielding member of silicon single crystal pulling device

Also Published As

Publication number Publication date
SG108822A1 (en) 2005-02-28
CN1345986A (en) 2002-04-24
CN1782140A (en) 2006-06-07
MY131022A (en) 2007-07-31
SG135030A1 (en) 2007-09-28
CN100430531C (en) 2008-11-05
ITMI20011120A1 (en) 2002-11-25
CN1289720C (en) 2006-12-13

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