ITMI20011120A0 - SILICON WAFERS HAVING CONTROLLED DEFECT DISTRIBUTION, DEFECT PREPARATION METHODS, AND CZOCHRALSKI EXTRACTOR FOR THE FACTORY - Google Patents
SILICON WAFERS HAVING CONTROLLED DEFECT DISTRIBUTION, DEFECT PREPARATION METHODS, AND CZOCHRALSKI EXTRACTOR FOR THE FACTORYInfo
- Publication number
- ITMI20011120A0 ITMI20011120A0 IT2001MI001120A ITMI20011120A ITMI20011120A0 IT MI20011120 A0 ITMI20011120 A0 IT MI20011120A0 IT 2001MI001120 A IT2001MI001120 A IT 2001MI001120A IT MI20011120 A ITMI20011120 A IT MI20011120A IT MI20011120 A0 ITMI20011120 A0 IT MI20011120A0
- Authority
- IT
- Italy
- Prior art keywords
- defect
- czochralski
- extractor
- factory
- preparation methods
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0057344A KR100378184B1 (en) | 1999-11-13 | 2000-09-29 | Silicon wafer having controlled distribution of defects, process for the preparation of the same and czochralski puller for manufacturing monocrystalline silicon ingot |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20011120A0 true ITMI20011120A0 (en) | 2001-05-25 |
ITMI20011120A1 ITMI20011120A1 (en) | 2002-11-25 |
Family
ID=36772732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2001MI001120A ITMI20011120A1 (en) | 2000-09-29 | 2001-05-25 | SILICON WAFERS HAVING CONTROLLED DISTRIBUTION OF DEFECTS, METHODS OF PREPARING THEMSELVES, AND CZOCHRALSKI EXTRACTORS FOR THE FACTORY |
Country Status (4)
Country | Link |
---|---|
CN (2) | CN1289720C (en) |
IT (1) | ITMI20011120A1 (en) |
MY (1) | MY131022A (en) |
SG (2) | SG135030A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4853027B2 (en) * | 2006-01-17 | 2012-01-11 | 信越半導体株式会社 | Method for producing silicon single crystal wafer |
TWI580825B (en) * | 2012-01-27 | 2017-05-01 | Memc新加坡有限公司 | Method of preparing cast silicon by directional solidification |
JP6100226B2 (en) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | Heat treatment method for silicon single crystal wafer |
KR101759876B1 (en) * | 2015-07-01 | 2017-07-31 | 주식회사 엘지실트론 | Wafer and method for analyzing defect of the wafer |
KR102626492B1 (en) * | 2016-11-14 | 2024-01-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Manufacturing method of high photoelectric conversion efficiency solar cell and high photoelectric conversion efficiency solar cell |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63315589A (en) * | 1987-06-16 | 1988-12-23 | Osaka Titanium Seizo Kk | Single crystal production apparatus |
FI901414A0 (en) * | 1989-03-30 | 1990-03-21 | Nippon Kokan Kk | ANORDINATION FOR FRAMING A KISELENKRISTALLER. |
KR960006262B1 (en) * | 1990-03-20 | 1996-05-13 | 닛뽕 고오깡 가부시기가이샤 | Silicon single crystal manufacturing device |
US5401669A (en) * | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
JPH0761889A (en) * | 1993-08-26 | 1995-03-07 | Komatsu Electron Metals Co Ltd | Semiconductor single crystal pull device and method fir pulling semiconductor single crystal |
JPH1179889A (en) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby |
JP3992800B2 (en) * | 1997-09-22 | 2007-10-17 | Sumco Techxiv株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
JP4166316B2 (en) * | 1998-02-27 | 2008-10-15 | Sumco Techxiv株式会社 | Single crystal manufacturing equipment |
JP3670493B2 (en) * | 1998-10-09 | 2005-07-13 | 東芝セラミックス株式会社 | Single crystal pulling device |
US6197111B1 (en) * | 1999-02-26 | 2001-03-06 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
JP3709494B2 (en) * | 1999-02-26 | 2005-10-26 | 株式会社Sumco | Heat shielding member of silicon single crystal pulling device |
-
2001
- 2001-05-24 MY MYPI20012486 patent/MY131022A/en unknown
- 2001-05-25 CN CN 01123301 patent/CN1289720C/en not_active Expired - Lifetime
- 2001-05-25 IT IT2001MI001120A patent/ITMI20011120A1/en unknown
- 2001-05-25 CN CNB2005101202266A patent/CN100430531C/en not_active Expired - Lifetime
- 2001-05-25 SG SG200402260-4A patent/SG135030A1/en unknown
- 2001-05-25 SG SG200103159A patent/SG108822A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
SG108822A1 (en) | 2005-02-28 |
CN1345986A (en) | 2002-04-24 |
CN1782140A (en) | 2006-06-07 |
MY131022A (en) | 2007-07-31 |
SG135030A1 (en) | 2007-09-28 |
CN100430531C (en) | 2008-11-05 |
ITMI20011120A1 (en) | 2002-11-25 |
CN1289720C (en) | 2006-12-13 |
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