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IT985922B - PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE - Google Patents

PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE

Info

Publication number
IT985922B
IT985922B IT6843873A IT6843873A IT985922B IT 985922 B IT985922 B IT 985922B IT 6843873 A IT6843873 A IT 6843873A IT 6843873 A IT6843873 A IT 6843873A IT 985922 B IT985922 B IT 985922B
Authority
IT
Italy
Prior art keywords
deposition
procedure
semiconductive materials
elementary state
elementary
Prior art date
Application number
IT6843873A
Other languages
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT985922B publication Critical patent/IT985922B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
IT6843873A 1972-05-20 1973-05-17 PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE IT985922B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Publications (1)

Publication Number Publication Date
IT985922B true IT985922B (en) 1974-12-30

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
IT6843873A IT985922B (en) 1972-05-20 1973-05-17 PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE

Country Status (7)

Country Link
JP (1) JPS5225295B2 (en)
CA (1) CA990626A (en)
DE (1) DE2324127A1 (en)
FR (1) FR2185445B1 (en)
GB (1) GB1406760A (en)
IT (1) IT985922B (en)
NL (1) NL7206877A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
JPS6169116A (en) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd Susceptor for continuous cvd coating on silicon wafer
JP3725598B2 (en) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 Epitaxial wafer manufacturing method
JP2006070342A (en) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd Vapor deposition apparatus, susceptor, and vapor deposition method
JP6333646B2 (en) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ Two-component coating composition and method for forming multilayer coating film using the same

Also Published As

Publication number Publication date
JPS5225295B2 (en) 1977-07-06
FR2185445A1 (en) 1974-01-04
JPS4943572A (en) 1974-04-24
NL7206877A (en) 1973-11-22
CA990626A (en) 1976-06-08
DE2324127A1 (en) 1973-12-06
FR2185445B1 (en) 1976-06-11
GB1406760A (en) 1975-09-17

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