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IT979867B - DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS - Google Patents

DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS

Info

Publication number
IT979867B
IT979867B IT48835/73A IT4883573A IT979867B IT 979867 B IT979867 B IT 979867B IT 48835/73 A IT48835/73 A IT 48835/73A IT 4883573 A IT4883573 A IT 4883573A IT 979867 B IT979867 B IT 979867B
Authority
IT
Italy
Prior art keywords
transistors
pairs
distribution
circuit
same characteristics
Prior art date
Application number
IT48835/73A
Other languages
Italian (it)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT979867B publication Critical patent/IT979867B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
IT48835/73A 1972-03-16 1973-03-15 DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS IT979867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
IT979867B true IT979867B (en) 1974-09-30

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48835/73A IT979867B (en) 1972-03-16 1973-03-15 DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS

Country Status (7)

Country Link
JP (1) JPS53675B2 (en)
AU (1) AU470370B2 (en)
CA (1) CA972071A (en)
DE (1) DE2313196A1 (en)
FR (1) FR2176129B3 (en)
GB (1) GB1421924A (en)
IT (1) IT979867B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (en) * 1975-02-19 1983-02-04 株式会社日立製作所 Integrated circuit with thermal feedback in mind
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (en) * 1981-11-30 1983-06-04 Toshiba Corp Semiconductor analog switch circuit
JPH0642537B2 (en) * 1985-11-15 1994-06-01 株式会社東芝 Semiconductor device
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JP3516307B2 (en) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ Differential analog transistor composed of digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (en) 1998-04-09 2004-04-26 松下電器産業株式会社 MOS transistor versus device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
JP5945155B2 (en) 2012-05-07 2016-07-05 矢崎総業株式会社 Connection structure of external conductor terminal of electric wire
JP5863892B2 (en) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 Semiconductor device

Also Published As

Publication number Publication date
GB1421924A (en) 1976-01-21
FR2176129B3 (en) 1976-03-12
JPS53675B2 (en) 1978-01-11
CA972071A (en) 1975-07-29
AU5334173A (en) 1974-09-19
JPS4895194A (en) 1973-12-06
AU470370B2 (en) 1976-03-11
FR2176129A1 (en) 1973-10-26
DE2313196A1 (en) 1973-10-04

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