IT9048239A0 - Condensatore impilato per una cella dram e metodo per fabbricarlo. - Google Patents
Condensatore impilato per una cella dram e metodo per fabbricarlo.Info
- Publication number
- IT9048239A0 IT9048239A0 IT9048239A IT4823990A IT9048239A0 IT 9048239 A0 IT9048239 A0 IT 9048239A0 IT 9048239 A IT9048239 A IT 9048239A IT 4823990 A IT4823990 A IT 4823990A IT 9048239 A0 IT9048239 A0 IT 9048239A0
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- dram cell
- stacked capacitor
- capacitor
- stacked
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900008288A KR920001716A (ko) | 1990-06-05 | 1990-06-05 | 디램셀의 적층형 캐패시터의 구조 및 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9048239A0 true IT9048239A0 (it) | 1990-08-29 |
| IT9048239A1 IT9048239A1 (it) | 1992-02-29 |
| IT1242360B IT1242360B (it) | 1994-03-04 |
Family
ID=19299819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT48239A IT1242360B (it) | 1990-06-05 | 1990-08-29 | Condensatore impilato per una cella dram e metodo per fabbricarlo. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5095346A (it) |
| JP (1) | JPH0724283B2 (it) |
| KR (1) | KR920001716A (it) |
| DE (1) | DE4027074A1 (it) |
| FR (1) | FR2662850A1 (it) |
| GB (1) | GB2244862A (it) |
| IT (1) | IT1242360B (it) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697682B2 (ja) * | 1990-03-20 | 1994-11-30 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2818964B2 (ja) * | 1990-03-30 | 1998-10-30 | 三菱電機株式会社 | 積層構造の電荷蓄積部を有する半導体記憶装置の製造方法 |
| US5223729A (en) * | 1990-09-26 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and a method of producing the same |
| JP2594176B2 (ja) * | 1990-10-31 | 1997-03-26 | 三洋電機株式会社 | 半導体記憶装置の製造方法 |
| US5155657A (en) * | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
| US5153813A (en) * | 1991-10-31 | 1992-10-06 | International Business Machines Corporation | High area capacitor formation using dry etching |
| JP3181406B2 (ja) * | 1992-02-18 | 2001-07-03 | 松下電器産業株式会社 | 半導体記憶装置 |
| US5525534A (en) * | 1992-03-13 | 1996-06-11 | Fujitsu Limited | Method of producing a semiconductor device using a reticle having a polygonal shaped hole |
| JP3005972B2 (ja) * | 1992-05-19 | 2000-02-07 | 株式会社 セル・コーポレーション | 閾動作式半導体型静電力装置 |
| JP3241106B2 (ja) * | 1992-07-17 | 2001-12-25 | 株式会社東芝 | ダイナミック型半導体記憶装置及びその製造方法 |
| JPH06209085A (ja) * | 1992-07-23 | 1994-07-26 | Texas Instr Inc <Ti> | スタック形ｄｒａｍコンデンサ構造体とその製造方法 |
| JPH1098163A (ja) | 1996-09-24 | 1998-04-14 | Oki Electric Ind Co Ltd | 半導体記憶装置のキャパシタ構造及びその形成方法 |
| US5712813A (en) * | 1996-10-17 | 1998-01-27 | Zhang; Guobiao | Multi-level storage capacitor structure with improved memory density |
| JP3749776B2 (ja) * | 1997-02-28 | 2006-03-01 | 株式会社東芝 | 半導体装置 |
| JP2985825B2 (ja) * | 1997-03-18 | 1999-12-06 | 日本電気株式会社 | 半導体装置 |
| US6251740B1 (en) | 1998-12-23 | 2001-06-26 | Lsi Logic Corporation | Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit |
| US6441419B1 (en) | 1998-03-31 | 2002-08-27 | Lsi Logic Corporation | Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same |
| US6417535B1 (en) | 1998-12-23 | 2002-07-09 | Lsi Logic Corporation | Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit |
| US6057571A (en) * | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
| US6358837B1 (en) | 1998-03-31 | 2002-03-19 | Lsi Logic Corporation | Method of electrically connecting and isolating components with vertical elements extending between interconnect layers in an integrated circuit |
| EP0954030A1 (de) * | 1998-04-30 | 1999-11-03 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Kondensators für eine Halbleiter-Speicheranordnung |
| US6211036B1 (en) | 1998-09-04 | 2001-04-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having an improved capacitor structure, and a method of manufacturing the same |
| US6372151B1 (en) | 1999-07-27 | 2002-04-16 | Applied Materials, Inc. | Storage poly process without carbon contamination |
| US6504202B1 (en) | 2000-02-02 | 2003-01-07 | Lsi Logic Corporation | Interconnect-embedded metal-insulator-metal capacitor |
| US6342734B1 (en) | 2000-04-27 | 2002-01-29 | Lsi Logic Corporation | Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same |
| US6566186B1 (en) | 2000-05-17 | 2003-05-20 | Lsi Logic Corporation | Capacitor with stoichiometrically adjusted dielectric and method of fabricating same |
| US6341056B1 (en) | 2000-05-17 | 2002-01-22 | Lsi Logic Corporation | Capacitor with multiple-component dielectric and method of fabricating same |
| JP4858414B2 (ja) * | 2007-11-08 | 2012-01-18 | トヨタ自動車株式会社 | ステアリング装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3173506D1 (en) * | 1980-09-22 | 1986-02-27 | Toshiba Kk | Semiconductor device and its manufacture |
| JPS59167051A (ja) * | 1983-03-14 | 1984-09-20 | Nec Corp | 記憶回路装置 |
| JPS60137051A (ja) * | 1983-12-26 | 1985-07-20 | Toshiba Corp | 半導体装置 |
| FR2577339B1 (fr) * | 1985-02-12 | 1991-05-10 | Eurotechnique Sa | Memoire dynamique en circuit integre |
| JPH0682783B2 (ja) * | 1985-03-29 | 1994-10-19 | 三菱電機株式会社 | 容量およびその製造方法 |
| JPS61231753A (ja) * | 1985-04-08 | 1986-10-16 | Nec Corp | Ｍｉｓ型ダイナミツクランダムアクセスメモリ装置 |
| JPS6298765A (ja) * | 1985-10-25 | 1987-05-08 | Fujitsu Ltd | ダイナミツクランダムアクセスメモリ |
| DE3856528T2 (de) * | 1987-06-17 | 2002-12-05 | Fujitsu Ltd., Kawasaki | Dynamisches Speicherbauteil mit wahlfreiem Zugriff und Verfahren zu seiner Herstellung |
| JPH01154551A (ja) * | 1987-12-11 | 1989-06-16 | Oki Electric Ind Co Ltd | 半導体メモリ集積回路装置及びその製造方法 |
| JPH06105770B2 (ja) * | 1988-02-04 | 1994-12-21 | 日本電気株式会社 | ダイナミック型半導体記憶装置 |
| JPH01270344A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH01270343A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH01289154A (ja) * | 1988-05-16 | 1989-11-21 | Fujitsu Ltd | 半導体集積回路装置およびその製造方法 |
| JPH0260162A (ja) * | 1988-08-25 | 1990-02-28 | Sony Corp | 半導体メモリ |
| JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| US4864464A (en) * | 1989-01-09 | 1989-09-05 | Micron Technology, Inc. | Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps |
| US5006481A (en) * | 1989-11-30 | 1991-04-09 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked capacitor DRAM cell |
| US5005103A (en) * | 1990-06-05 | 1991-04-02 | Samsung Electronics Co., Ltd. | Method of manufacturing folded capacitors in semiconductor and folded capacitors fabricated thereby |
-
1990
- 1990-06-05 KR KR1019900008288A patent/KR920001716A/ko not_active Ceased
- 1990-08-21 FR FR9010511A patent/FR2662850A1/fr not_active Withdrawn
- 1990-08-27 DE DE4027074A patent/DE4027074A1/de active Granted
- 1990-08-29 IT IT48239A patent/IT1242360B/it active IP Right Grant
- 1990-08-30 JP JP2226835A patent/JPH0724283B2/ja not_active Expired - Lifetime
- 1990-08-31 US US07/575,666 patent/US5095346A/en not_active Expired - Lifetime
- 1990-08-31 GB GB9018965A patent/GB2244862A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2244862A (en) | 1991-12-11 |
| KR920001716A (ko) | 1992-01-30 |
| DE4027074C2 (it) | 1992-06-04 |
| US5095346A (en) | 1992-03-10 |
| DE4027074A1 (de) | 1992-01-09 |
| IT1242360B (it) | 1994-03-04 |
| JPH0724283B2 (ja) | 1995-03-15 |
| JPH0439964A (ja) | 1992-02-10 |
| GB9018965D0 (en) | 1990-10-17 |
| IT9048239A1 (it) | 1992-02-29 |
| FR2662850A1 (fr) | 1991-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |