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IT8683623A0 - Dispositivo di memoria non labile a seminconduttore con porta nonconnessa (floating gate) alterabile elettricamente. - Google Patents

Dispositivo di memoria non labile a seminconduttore con porta nonconnessa (floating gate) alterabile elettricamente.

Info

Publication number
IT8683623A0
IT8683623A0 IT8683623A IT8362386A IT8683623A0 IT 8683623 A0 IT8683623 A0 IT 8683623A0 IT 8683623 A IT8683623 A IT 8683623A IT 8362386 A IT8362386 A IT 8362386A IT 8683623 A0 IT8683623 A0 IT 8683623A0
Authority
IT
Italy
Prior art keywords
seminconductor
labile
memory device
floating gate
connected port
Prior art date
Application number
IT8683623A
Other languages
English (en)
Other versions
IT1191561B (it
Inventor
Gabriella Fontana
Original Assignee
Sgs Microelettrica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettrica Spa filed Critical Sgs Microelettrica Spa
Priority to IT83623/86A priority Critical patent/IT1191561B/it
Publication of IT8683623A0 publication Critical patent/IT8683623A0/it
Priority to US07/054,712 priority patent/US4823175A/en
Priority to EP87830204A priority patent/EP0256993B1/en
Priority to DE8787830204T priority patent/DE3768176D1/de
Priority to JP62132028A priority patent/JPH0810727B2/ja
Application granted granted Critical
Publication of IT1191561B publication Critical patent/IT1191561B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
IT83623/86A 1986-06-03 1986-06-03 Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente IT1191561B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT83623/86A IT1191561B (it) 1986-06-03 1986-06-03 Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente
US07/054,712 US4823175A (en) 1986-06-03 1987-05-27 Electrically alterable, nonvolatile floating gate memory device
EP87830204A EP0256993B1 (en) 1986-06-03 1987-05-29 Electrically alterable, nonvolatile, floating gate memory device
DE8787830204T DE3768176D1 (de) 1986-06-03 1987-05-29 Elektrisch veraenderbare nichtfluechtige speichereinrichtung mit schwebendem tor.
JP62132028A JPH0810727B2 (ja) 1986-06-03 1987-05-29 電気的に変更できる持久記憶浮動ゲ−トメモリデバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83623/86A IT1191561B (it) 1986-06-03 1986-06-03 Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente

Publications (2)

Publication Number Publication Date
IT8683623A0 true IT8683623A0 (it) 1986-06-03
IT1191561B IT1191561B (it) 1988-03-23

Family

ID=11323290

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83623/86A IT1191561B (it) 1986-06-03 1986-06-03 Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente

Country Status (5)

Country Link
US (1) US4823175A (it)
EP (1) EP0256993B1 (it)
JP (1) JPH0810727B2 (it)
DE (1) DE3768176D1 (it)
IT (1) IT1191561B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020030A (en) * 1988-10-31 1991-05-28 Huber Robert J Nonvolatile SNOS memory cell with induced capacitor
EP0393737B1 (en) * 1989-03-31 1995-06-07 Koninklijke Philips Electronics N.V. Electrically-programmable semiconductor memories
DE69428658T2 (de) * 1993-11-30 2002-06-20 Kabushiki Kaisha Toshiba, Kawasaki Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung
US5550072A (en) * 1994-08-30 1996-08-27 National Semiconductor Corporation Method of fabrication of integrated circuit chip containing EEPROM and capacitor
US5498560A (en) * 1994-09-16 1996-03-12 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
EP0752721B1 (en) * 1995-06-29 2009-04-29 Sharp Kabushiki Kaisha Nonvolatile semiconductor memory and driving method and fabrication method of the same
US5877054A (en) * 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
US5844269A (en) * 1996-07-02 1998-12-01 National Semiconductor Corporation EEPROM cell having reduced capacitance across the layer of tunnel oxide
JPH10242434A (ja) * 1997-02-26 1998-09-11 Toshiba Corp 半導体集積回路装置及びフラッシュｅｅｐｒｏｍ
IT1294312B1 (it) 1997-08-07 1999-03-24 Sgs Thomson Microelectronics Processo per la fabbricazione di un dispositivo di memoria non volatile programmabile elettricamente
TW351852B (en) * 1997-10-20 1999-02-01 United Semicondutor Corp Process for manufacturing flash memory cell structure
US6023085A (en) 1997-12-18 2000-02-08 Advanced Micro Devices, Inc. Core cell structure and corresponding process for NAND-type high performance flash memory device
EP1071134A1 (en) 1999-07-22 2001-01-24 STMicroelectronics S.r.l. Process for manufacturing an electronic device comprising EEPROM memory cells with dimensional control of the floating gate regions
JP2002026151A (ja) * 2000-07-05 2002-01-25 Mitsubishi Electric Corp 半導体メモリ装置
KR100518577B1 (ko) * 2003-05-26 2005-10-04 삼성전자주식회사 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법
US7262095B1 (en) * 2005-06-07 2007-08-28 Spansion Llc System and method for reducing process-induced charging
KR100731058B1 (ko) * 2005-12-26 2007-06-22 동부일렉트로닉스 주식회사 이중 터널 산화막을 포함하는 플래시 메모리 셀 및 그 제조방법
US7825479B2 (en) * 2008-08-06 2010-11-02 International Business Machines Corporation Electrical antifuse having a multi-thickness dielectric layer
CN102709288B (zh) * 2012-05-18 2016-03-30 电子科技大学 一种总剂量辐射加固的半导体存储器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
US4498095A (en) * 1978-05-02 1985-02-05 International Business Machines Corporation Semiconductor structure with improved isolation between two layers of polycrystalline silicon
JPS55500965A (it) * 1978-11-27 1980-11-13
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
US4458262A (en) * 1980-05-27 1984-07-03 Supertex, Inc. CMOS Device with ion-implanted channel-stop region and fabrication method therefor
DE3032333A1 (de) * 1980-08-27 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Monolithische statische speicherzelle und verfahren zu ihrem betrieb
EP0071335B1 (en) * 1981-07-27 1986-10-15 Xerox Corporation Field effect transistor
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
JPS58115856A (ja) * 1981-12-28 1983-07-09 Nec Home Electronics Ltd 半導体装置
WO1983003166A1 (en) * 1982-03-09 1983-09-15 Rca Corp An electrically alterable, nonvolatile floating-gate memory device
US4590504A (en) * 1982-12-28 1986-05-20 Thomson Components - Mostek Corporation Nonvolatile MOS memory cell with tunneling element
JPS60130161A (ja) * 1983-12-16 1985-07-11 Fujitsu Ltd スタテイツクメモリセル
IT1213218B (it) * 1984-09-25 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
JPS61194877A (ja) * 1985-02-25 1986-08-29 Nec Corp 絶縁ゲ−ト型不揮発性半導体メモリ
JPS61228672A (ja) * 1985-04-02 1986-10-11 Nec Corp 絶縁ゲ−ト型不揮発性半導体メモリ及びその製造方法

Also Published As

Publication number Publication date
DE3768176D1 (de) 1991-04-04
US4823175A (en) 1989-04-18
EP0256993B1 (en) 1991-02-27
JPS62291180A (ja) 1987-12-17
JPH0810727B2 (ja) 1996-01-31
EP0256993A1 (en) 1988-02-24
IT1191561B (it) 1988-03-23

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628