IT8447900A0 - NOT BY MEANS OF LASER PULSES IMPROVEMENT IN THE PROCEDURES OF REARORDING OF CRYSTALLINE STRUCTURES IN ALLOY OR SEMICONDUCTORS - Google Patents
NOT BY MEANS OF LASER PULSES IMPROVEMENT IN THE PROCEDURES OF REARORDING OF CRYSTALLINE STRUCTURES IN ALLOY OR SEMICONDUCTORSInfo
- Publication number
- IT8447900A0 IT8447900A0 IT8447900A IT4790084A IT8447900A0 IT 8447900 A0 IT8447900 A0 IT 8447900A0 IT 8447900 A IT8447900 A IT 8447900A IT 4790084 A IT4790084 A IT 4790084A IT 8447900 A0 IT8447900 A0 IT 8447900A0
- Authority
- IT
- Italy
- Prior art keywords
- rearording
- semiconductors
- procedures
- alloy
- improvement
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT47900/84A IT1205350B (en) | 1984-03-21 | 1984-03-21 | IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES |
| DE3510204A DE3510204C2 (en) | 1984-03-21 | 1985-03-21 | Improved process for reordering crystalline structures in alloyed or non-alloyed semiconductors using laser pulses |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT47900/84A IT1205350B (en) | 1984-03-21 | 1984-03-21 | IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8447900A0 true IT8447900A0 (en) | 1984-03-21 |
| IT1205350B IT1205350B (en) | 1989-03-15 |
Family
ID=11263227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT47900/84A IT1205350B (en) | 1984-03-21 | 1984-03-21 | IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE3510204C2 (en) |
| IT (1) | IT1205350B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19904082A1 (en) * | 1999-02-02 | 2000-08-03 | Agfa Gevaert Ag | Process for the production of solar cells |
-
1984
- 1984-03-21 IT IT47900/84A patent/IT1205350B/en active
-
1985
- 1985-03-21 DE DE3510204A patent/DE3510204C2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| IT1205350B (en) | 1989-03-15 |
| DE3510204A1 (en) | 1985-10-03 |
| DE3510204C2 (en) | 1996-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960306 |