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IT8319169A0 - Circuito a transistori darlington. - Google Patents

Circuito a transistori darlington.

Info

Publication number
IT8319169A0
IT8319169A0 IT8319169A IT1916983A IT8319169A0 IT 8319169 A0 IT8319169 A0 IT 8319169A0 IT 8319169 A IT8319169 A IT 8319169A IT 1916983 A IT1916983 A IT 1916983A IT 8319169 A0 IT8319169 A0 IT 8319169A0
Authority
IT
Italy
Prior art keywords
transistor circuit
darlington transistor
darlington
circuit
transistor
Prior art date
Application number
IT8319169A
Other languages
English (en)
Other versions
IT1167555B (it
Inventor
Peter Flohrs
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IT8319169A0 publication Critical patent/IT8319169A0/it
Application granted granted Critical
Publication of IT1167555B publication Critical patent/IT1167555B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
IT19169/83A 1982-01-20 1983-01-19 Circuito a transistori darlington IT1167555B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE8201186 1982-01-20
DE19823227536 DE3227536A1 (de) 1982-01-20 1982-07-23 Darlington-transistorschaltung

Publications (2)

Publication Number Publication Date
IT8319169A0 true IT8319169A0 (it) 1983-01-19
IT1167555B IT1167555B (it) 1987-05-13

Family

ID=25803244

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19169/83A IT1167555B (it) 1982-01-20 1983-01-19 Circuito a transistori darlington

Country Status (6)

Country Link
US (1) US4618875A (it)
EP (1) EP0099897B1 (it)
JP (1) JPS59500074A (it)
DE (2) DE3227536A1 (it)
IT (1) IT1167555B (it)
WO (1) WO1983002528A1 (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
US4916494A (en) * 1984-05-04 1990-04-10 Robert Bosch Gmbh Monolithic integrated planar semiconductor system and process for making the same
DE3417474A1 (de) * 1984-05-11 1985-11-14 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung
DE3431676A1 (de) * 1984-08-29 1986-03-13 Robert Bosch Gmbh, 7000 Stuttgart Integrierte leistungsendstufe
JPH01198071A (ja) * 1988-02-03 1989-08-09 Mitsubishi Electric Corp クリップダイオード内蔵形トランジスタ
US4968901A (en) * 1989-05-16 1990-11-06 Burr-Brown Corporation Integrated circuit high frequency input attenuator circuit
DE3926888A1 (de) * 1989-08-16 1991-02-21 Bosch Gmbh Robert Darlington-transistorschaltung
US5479046A (en) * 1990-06-28 1995-12-26 Robert Bosch Gmbh Monolithically integrated semiconductor arrangement with a cover electrode
DE4020519A1 (de) * 1990-06-28 1992-01-02 Bosch Gmbh Robert Monolithisch integrierte halbleiteranordnung
DE4031350A1 (de) * 1990-10-04 1992-04-09 Bosch Gmbh Robert Spannungsbegrenzung fuer eine transistorschaltung
DE4039662A1 (de) * 1990-12-12 1992-06-17 Bosch Gmbh Robert Monolithisch integrierte halbleiteranordnung
DE4117959A1 (de) * 1991-05-31 1992-12-03 Bosch Gmbh Robert Halbleiteranordnung mit p-n-uebergang und zugeordneter elektrodenanordnung
DE4207349A1 (de) * 1992-03-07 1993-09-09 Telefunken Microelectron Leistungs-spannungsbegrenzungsschaltung
US5397914A (en) * 1992-04-30 1995-03-14 Hitachi Ltd. Power transistor device including power transistors in darlington connection and zener diode which is coupled between collector and base of power transistors and which is formed in polysilicon film
US5502338A (en) * 1992-04-30 1996-03-26 Hitachi, Ltd. Power transistor device having collector voltage clamped to stable level over wide temperature range
DE4231829A1 (de) * 1992-09-23 1994-03-24 Telefunken Microelectron Planares Halbleiterbauteil
DE4343140B4 (de) * 1993-12-17 2009-12-03 Robert Bosch Gmbh Halbleiteranordnung zur Beeinflussung der Durchbruchsspannung von Transistoren
US5747853A (en) * 1996-08-07 1998-05-05 Megamos Corporation Semiconductor structure with controlled breakdown protection
KR102403383B1 (ko) * 2019-02-28 2022-06-02 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 소스 저항기를 갖는 반도체 디바이스 및 그 제조 방법
US11217526B2 (en) 2019-02-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source resistor and manufacturing method thereof
US12122251B2 (en) 2022-09-28 2024-10-22 BorgWarner US Technologies LLC Systems and methods for bidirectional message architecture for inverter for electric vehicle

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1102197A (en) * 1966-01-14 1968-02-07 Westinghouse Brake & Signal Semi-conductor elements
NL293292A (it) * 1962-06-11
NL6413894A (it) * 1964-02-04 1965-08-05
US3510735A (en) * 1967-04-13 1970-05-05 Scient Data Systems Inc Transistor with integral pinch resistor
GB1348697A (en) * 1970-07-31 1974-03-20 Fairchild Camera Instr Co Semiconductors
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3858235A (en) * 1971-07-05 1974-12-31 Siemens Ag Planar four-layer-diode having a lateral arrangement of one of two partial transistors
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
DE2256688B2 (de) * 1972-11-18 1976-05-06 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
FR2468253A1 (fr) * 1979-10-22 1981-04-30 Radiotechnique Compelec Amplificateur de type darlington protege contre les surcharges de courant et sa realisation en structure semiconductrice integree
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
US4564771A (en) * 1982-07-17 1986-01-14 Robert Bosch Gmbh Integrated Darlington transistor combination including auxiliary transistor and Zener diode

Also Published As

Publication number Publication date
JPS59500074A (ja) 1984-01-12
EP0099897B1 (de) 1986-09-24
DE3227536A1 (de) 1983-07-28
US4618875A (en) 1986-10-21
DE3273498D1 (en) 1986-10-30
WO1983002528A1 (fr) 1983-07-21
EP0099897A1 (de) 1984-02-08
IT1167555B (it) 1987-05-13

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970127