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IT7826395A0 - Processo di fabbricazione di dispositivi npn/pnp. - Google Patents

Processo di fabbricazione di dispositivi npn/pnp.

Info

Publication number
IT7826395A0
IT7826395A0 IT7826395A IT2639578A IT7826395A0 IT 7826395 A0 IT7826395 A0 IT 7826395A0 IT 7826395 A IT7826395 A IT 7826395A IT 2639578 A IT2639578 A IT 2639578A IT 7826395 A0 IT7826395 A0 IT 7826395A0
Authority
IT
Italy
Prior art keywords
npn
manufacturing process
devices manufacturing
pnp devices
pnp
Prior art date
Application number
IT7826395A
Other languages
English (en)
Other versions
IT1109971B (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7826395A0 publication Critical patent/IT7826395A0/it
Application granted granted Critical
Publication of IT1109971B publication Critical patent/IT1109971B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
IT26395/78A 1977-08-31 1978-08-02 Processo di fabbricazione di dispositivi npn/pnp IT1109971B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/830,222 US4180827A (en) 1977-08-31 1977-08-31 NPN/PNP Fabrication process with improved alignment

Publications (2)

Publication Number Publication Date
IT7826395A0 true IT7826395A0 (it) 1978-08-02
IT1109971B IT1109971B (it) 1985-12-23

Family

ID=25256566

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26395/78A IT1109971B (it) 1977-08-31 1978-08-02 Processo di fabbricazione di dispositivi npn/pnp

Country Status (6)

Country Link
US (1) US4180827A (it)
EP (1) EP0000909B1 (it)
JP (1) JPS5438775A (it)
CA (1) CA1118909A (it)
DE (1) DE2860860D1 (it)
IT (1) IT1109971B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same
US4492008A (en) * 1983-08-04 1985-01-08 International Business Machines Corporation Methods for making high performance lateral bipolar transistors
GB2148589B (en) * 1983-10-18 1987-04-23 Standard Telephones Cables Ltd Improvements in intergrated circuits
US6091884A (en) * 1991-08-19 2000-07-18 Index Systems, Inc. Enhancing operations of video tape cassette players
JPH09306924A (ja) * 1996-03-15 1997-11-28 Toshiba Corp 半導体装置の製造方法
US6551869B1 (en) * 2000-06-09 2003-04-22 Motorola, Inc. Lateral PNP and method of manufacture
US20060148188A1 (en) * 2005-01-05 2006-07-06 Bcd Semiconductor Manufacturing Limited Fabrication method for bipolar integrated circuits
KR100783278B1 (ko) * 2006-08-31 2007-12-06 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US8791546B2 (en) * 2010-10-21 2014-07-29 Freescale Semiconductor, Inc. Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure
JPS5155676A (en) * 1974-11-11 1976-05-15 Fujitsu Ltd Handotaisochino seizohoho
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
US4054900A (en) * 1974-12-27 1977-10-18 Tokyo Shibaura Electric Co., Ltd. I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor
FR2337433A1 (fr) * 1975-12-29 1977-07-29 Tokyo Shibaura Electric Co Dispositif a semi-conducteur

Also Published As

Publication number Publication date
CA1118909A (en) 1982-02-23
JPS5438775A (en) 1979-03-23
US4180827A (en) 1979-12-25
EP0000909A1 (de) 1979-03-07
IT1109971B (it) 1985-12-23
DE2860860D1 (de) 1981-10-29
EP0000909B1 (de) 1981-07-22

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