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IT1400968B1 - Dispositivo di memoria non-volatile con scarica controllata - Google Patents

Dispositivo di memoria non-volatile con scarica controllata

Info

Publication number
IT1400968B1
IT1400968B1 ITMI2010A001082A ITMI20101082A IT1400968B1 IT 1400968 B1 IT1400968 B1 IT 1400968B1 IT MI2010A001082 A ITMI2010A001082 A IT MI2010A001082A IT MI20101082 A ITMI20101082 A IT MI20101082A IT 1400968 B1 IT1400968 B1 IT 1400968B1
Authority
IT
Italy
Prior art keywords
memory device
volatile memory
controlled discharge
discharge
controlled
Prior art date
Application number
ITMI2010A001082A
Other languages
English (en)
Inventor
Maurizio Francesco Perroni
Castagnagiuseppe
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI2010A001082A priority Critical patent/IT1400968B1/it
Priority to US13/156,360 priority patent/US8441865B2/en
Publication of ITMI20101082A1 publication Critical patent/ITMI20101082A1/it
Application granted granted Critical
Publication of IT1400968B1 publication Critical patent/IT1400968B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
ITMI2010A001082A 2010-06-15 2010-06-15 Dispositivo di memoria non-volatile con scarica controllata IT1400968B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITMI2010A001082A IT1400968B1 (it) 2010-06-15 2010-06-15 Dispositivo di memoria non-volatile con scarica controllata
US13/156,360 US8441865B2 (en) 2010-06-15 2011-06-09 Non-volatile memory device with controlled discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2010A001082A IT1400968B1 (it) 2010-06-15 2010-06-15 Dispositivo di memoria non-volatile con scarica controllata

Publications (2)

Publication Number Publication Date
ITMI20101082A1 ITMI20101082A1 (it) 2011-12-16
IT1400968B1 true IT1400968B1 (it) 2013-07-05

Family

ID=43242211

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2010A001082A IT1400968B1 (it) 2010-06-15 2010-06-15 Dispositivo di memoria non-volatile con scarica controllata

Country Status (2)

Country Link
US (1) US8441865B2 (it)
IT (1) IT1400968B1 (it)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797857A (en) 1986-04-11 1989-01-10 Texas Instruments Incorporated Array discharge for biased array
US4769787A (en) 1985-07-26 1988-09-06 Hitachi, Ltd. Semiconductor memory device
JP3892612B2 (ja) * 1999-04-09 2007-03-14 株式会社東芝 半導体装置
JP4068781B2 (ja) 2000-02-28 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置および半導体集積回路装置の製造方法
WO2006033832A2 (en) * 2004-09-21 2006-03-30 Atmel Corporation New compensated method to implement a high voltage discharge phase after erase pulse in a flash memory device
US7272053B2 (en) * 2004-11-18 2007-09-18 Freescale Semiconductor, Inc. Integrated circuit having a non-volatile memory with discharge rate control and method therefor
JP4683995B2 (ja) * 2005-04-28 2011-05-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7940572B2 (en) * 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates

Also Published As

Publication number Publication date
ITMI20101082A1 (it) 2011-12-16
US20110305092A1 (en) 2011-12-15
US8441865B2 (en) 2013-05-14

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