IT1397216B1 - Dispositivo di memoria sram - Google Patents
Dispositivo di memoria sramInfo
- Publication number
- IT1397216B1 IT1397216B1 ITMI2009A002322A ITMI20092322A IT1397216B1 IT 1397216 B1 IT1397216 B1 IT 1397216B1 IT MI2009A002322 A ITMI2009A002322 A IT MI2009A002322A IT MI20092322 A ITMI20092322 A IT MI20092322A IT 1397216 B1 IT1397216 B1 IT 1397216B1
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- sram memory
- sram
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2009A002322A IT1397216B1 (it) | 2009-12-29 | 2009-12-29 | Dispositivo di memoria sram |
| US12/974,569 US8400820B2 (en) | 2009-12-29 | 2010-12-21 | Adjustable impedance SRAM memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2009A002322A IT1397216B1 (it) | 2009-12-29 | 2009-12-29 | Dispositivo di memoria sram |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITMI20092322A1 ITMI20092322A1 (it) | 2011-06-30 |
| IT1397216B1 true IT1397216B1 (it) | 2013-01-04 |
Family
ID=42102520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI2009A002322A IT1397216B1 (it) | 2009-12-29 | 2009-12-29 | Dispositivo di memoria sram |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8400820B2 (it) |
| IT (1) | IT1397216B1 (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2508221B (en) | 2012-11-26 | 2015-02-25 | Surecore Ltd | Low-Power SRAM Cells |
| CN103019878B (zh) * | 2012-12-31 | 2015-01-14 | 清华大学 | 一种冗余结构存储单元 |
| CN103714849B (zh) * | 2013-12-30 | 2017-01-25 | 深圳市国微电子有限公司 | 一种用于可编程芯片的可编程存储单元 |
| US9871520B1 (en) * | 2016-08-15 | 2018-01-16 | Xilinx, Inc. | Voting circuit and self-correcting latches |
| US10236057B2 (en) * | 2017-05-25 | 2019-03-19 | Globalfoundries Singapore Pte. Ltd. | Memory cells and methods for writing data to memory cells |
| DE102021109480A1 (de) * | 2020-12-14 | 2022-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speichervorrichtung |
| TW202331718A (zh) * | 2021-12-21 | 2023-08-01 | 美商賽諾西斯公司 | 具有寫入輔助的靜態隨機存取記憶體非箝位寫入驅動器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638463A (en) * | 1985-01-24 | 1987-01-20 | International Business Machines Corporation | Fast writing circuit for a soft error protected storage cell |
| US4956815A (en) * | 1988-09-30 | 1990-09-11 | Texas Instruments Incorporated | Memory cell with increased stability |
| US5307142A (en) * | 1991-11-15 | 1994-04-26 | The United States Of America As Represented By The United States Department Of Energy | High performance static latches with complete single event upset immunity |
| JP3517411B2 (ja) * | 2002-04-08 | 2004-04-12 | 沖電気工業株式会社 | 半導体記憶装置 |
| JP2004047529A (ja) * | 2002-07-09 | 2004-02-12 | Renesas Technology Corp | 半導体記憶装置 |
| WO2007091541A1 (ja) * | 2006-02-08 | 2007-08-16 | Renesas Technology Corp. | 半導体記憶装置 |
| JP4932341B2 (ja) * | 2006-06-23 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置及び半導体記憶装置の動作方法 |
| US7782654B2 (en) * | 2007-05-09 | 2010-08-24 | Nec Electronics Corporation | Static random access memory device |
| US7983071B2 (en) * | 2008-01-04 | 2011-07-19 | Texas Instruments Incorporated | Dual node access storage cell having buffer circuits |
| FR2927722A1 (fr) * | 2008-02-18 | 2009-08-21 | Commissariat Energie Atomique | Cellule memoire sram a transistor double grille dotee de moyens pour ameliorer la marge en ecriture |
| WO2009122579A1 (ja) * | 2008-04-03 | 2009-10-08 | 日本ユニサンティスエレクトロニクス株式会社 | ６ｔ ｓｇｔ ｃｍｏｓ ｓｒａｍセルの安定性を改善する方法及び装置 |
| JP5306084B2 (ja) * | 2009-07-10 | 2013-10-02 | 株式会社東芝 | 半導体記憶装置 |
-
2009
- 2009-12-29 IT ITMI2009A002322A patent/IT1397216B1/it active
-
2010
- 2010-12-21 US US12/974,569 patent/US8400820B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110157954A1 (en) | 2011-06-30 |
| US8400820B2 (en) | 2013-03-19 |
| ITMI20092322A1 (it) | 2011-06-30 |
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