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IT1394053B1 - Reattore per deposizione di strati su substrati - Google Patents

Reattore per deposizione di strati su substrati

Info

Publication number
IT1394053B1
IT1394053B1 ITMI2009A000753A ITMI20090753A IT1394053B1 IT 1394053 B1 IT1394053 B1 IT 1394053B1 IT MI2009A000753 A ITMI2009A000753 A IT MI2009A000753A IT MI20090753 A ITMI20090753 A IT MI20090753A IT 1394053 B1 IT1394053 B1 IT 1394053B1
Authority
IT
Italy
Prior art keywords
reactor
substrates
deposition
layers
Prior art date
Application number
ITMI2009A000753A
Other languages
English (en)
Inventor
Mario Preti
Franco Preti
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to ITMI2009A000753A priority Critical patent/IT1394053B1/it
Publication of ITMI20090753A1 publication Critical patent/ITMI20090753A1/it
Application granted granted Critical
Publication of IT1394053B1 publication Critical patent/IT1394053B1/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45591Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Saccharide Compounds (AREA)
ITMI2009A000753A 2009-05-04 2009-05-04 Reattore per deposizione di strati su substrati IT1394053B1 (it)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ITMI2009A000753A IT1394053B1 (it) 2009-05-04 2009-05-04 Reattore per deposizione di strati su substrati

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2009A000753A IT1394053B1 (it) 2009-05-04 2009-05-04 Reattore per deposizione di strati su substrati

Publications (2)

Publication Number Publication Date
ITMI20090753A1 ITMI20090753A1 (it) 2010-11-05
IT1394053B1 true IT1394053B1 (it) 2012-05-25

Family

ID=41716471

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2009A000753A IT1394053B1 (it) 2009-05-04 2009-05-04 Reattore per deposizione di strati su substrati

Country Status (1)

Country Link
IT (1) IT1394053B1 (it)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185499A (ja) * 1982-04-21 1983-10-29 Clarion Co Ltd 薄膜気相成長装置
US5493987A (en) * 1994-05-16 1996-02-27 Ag Associates, Inc. Chemical vapor deposition reactor and method
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3702068B2 (ja) * 1997-04-09 2005-10-05 東京エレクトロン株式会社 被処理基板の処理装置
KR20080013025A (ko) * 2000-12-27 2008-02-12 동경 엘렉트론 주식회사 처리 장치
DE10301949A1 (de) * 2003-01-20 2004-07-29 Siced Electronics Development Gmbh & Co. Kg CVD-Reaktor mit homogenisierendem Gaseinlass und Verwendung des CVD-Reaktors
KR100558922B1 (ko) * 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법

Also Published As

Publication number Publication date
ITMI20090753A1 (it) 2010-11-05

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