IT1290286B1 - Diodo luminoso a rilassamento,con una sensibilita' alla luce aumentata - Google Patents
Diodo luminoso a rilassamento,con una sensibilita' alla luce aumentataInfo
- Publication number
- IT1290286B1 IT1290286B1 IT97MI000262A ITMI970262A IT1290286B1 IT 1290286 B1 IT1290286 B1 IT 1290286B1 IT 97MI000262 A IT97MI000262 A IT 97MI000262A IT MI970262 A ITMI970262 A IT MI970262A IT 1290286 B1 IT1290286 B1 IT 1290286B1
- Authority
- IT
- Italy
- Prior art keywords
- relaxing
- light sensitivity
- increased light
- bright diode
- bright
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P7/00—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices
- F02P7/02—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors
- F02P7/03—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means
- F02P7/035—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means without mechanical switching means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19604890A DE19604890B4 (de) | 1996-02-10 | 1996-02-10 | Lichtkippdiode |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI970262A1 ITMI970262A1 (it) | 1998-08-07 |
IT1290286B1 true IT1290286B1 (it) | 1998-10-22 |
Family
ID=7785044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT97MI000262A IT1290286B1 (it) | 1996-02-10 | 1997-02-07 | Diodo luminoso a rilassamento,con una sensibilita' alla luce aumentata |
Country Status (5)
Country | Link |
---|---|
US (1) | US5780877A (it) |
JP (1) | JPH09223792A (it) |
DE (1) | DE19604890B4 (it) |
HU (1) | HU222329B1 (it) |
IT (1) | IT1290286B1 (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004025082B4 (de) * | 2004-05-21 | 2006-12-28 | Infineon Technologies Ag | Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung |
US7582917B2 (en) * | 2006-03-10 | 2009-09-01 | Bae Systems Information And Electronic Systems Integration Inc. | Monolithically integrated light-activated thyristor and method |
US8835975B1 (en) * | 2013-05-10 | 2014-09-16 | Ixys Corporation | Ultra-fast breakover diode |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3427509A (en) * | 1965-11-16 | 1969-02-11 | Rca Corp | Asymmetrical triggering diode composed of three opposite conductivity regions |
DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
DE4417164C1 (de) * | 1994-05-17 | 1995-06-22 | Bosch Gmbh Robert | Hochspannungskippdiode insb. geeignet als Zündspannungsverteiler eines Verbrennungsmotors |
-
1996
- 1996-02-10 DE DE19604890A patent/DE19604890B4/de not_active Expired - Fee Related
-
1997
- 1997-02-06 US US08/795,624 patent/US5780877A/en not_active Expired - Fee Related
- 1997-02-07 JP JP9025460A patent/JPH09223792A/ja not_active Abandoned
- 1997-02-07 IT IT97MI000262A patent/IT1290286B1/it active IP Right Grant
- 1997-02-07 HU HU9700391A patent/HU222329B1/hu not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH09223792A (ja) | 1997-08-26 |
HU222329B1 (hu) | 2003-06-28 |
DE19604890A1 (de) | 1997-08-14 |
HU9700391D0 (en) | 1997-03-28 |
HUP9700391A3 (en) | 1998-12-28 |
ITMI970262A1 (it) | 1998-08-07 |
US5780877A (en) | 1998-07-14 |
HUP9700391A2 (en) | 1997-11-28 |
DE19604890B4 (de) | 2007-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |