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IT1213343B - Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. - Google Patents

Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.

Info

Publication number
IT1213343B
IT1213343B IT8621682A IT2168286A IT1213343B IT 1213343 B IT1213343 B IT 1213343B IT 8621682 A IT8621682 A IT 8621682A IT 2168286 A IT2168286 A IT 2168286A IT 1213343 B IT1213343 B IT 1213343B
Authority
IT
Italy
Prior art keywords
state
detection circuit
matrix cells
mos technology
eprom memories
Prior art date
Application number
IT8621682A
Other languages
English (en)
Other versions
IT8621682A0 (it
Inventor
David Novosel
Giovanni Campardo
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8621682A priority Critical patent/IT1213343B/it
Publication of IT8621682A0 publication Critical patent/IT8621682A0/it
Priority to EP87113241A priority patent/EP0270750B1/en
Priority to DE8787113241T priority patent/DE3778845D1/de
Priority to JP62228226A priority patent/JPS63133399A/ja
Priority to KR870010097A priority patent/KR880004488A/ko
Application granted granted Critical
Publication of IT1213343B publication Critical patent/IT1213343B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
IT8621682A 1986-09-12 1986-09-12 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. IT1213343B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8621682A IT1213343B (it) 1986-09-12 1986-09-12 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
EP87113241A EP0270750B1 (en) 1986-09-12 1987-09-10 Sense circuit for the state of matrix cells in mos eprom memories
DE8787113241T DE3778845D1 (de) 1986-09-12 1987-09-10 Matrixzellenabtastschaltung fuer mos-eprom-speicher.
JP62228226A JPS63133399A (ja) 1986-09-12 1987-09-11 Ｍｏｓ　ｅｐｒｏｍ　メモリのマトリックスセルの状態検知回路
KR870010097A KR880004488A (ko) 1986-09-12 1987-09-11 모스 이피롬 메모리의 매트릭스 셀에 대한 상태 감지회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8621682A IT1213343B (it) 1986-09-12 1986-09-12 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.

Publications (2)

Publication Number Publication Date
IT8621682A0 IT8621682A0 (it) 1986-09-12
IT1213343B true IT1213343B (it) 1989-12-20

Family

ID=11185320

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8621682A IT1213343B (it) 1986-09-12 1986-09-12 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.

Country Status (5)

Country Link
EP (1) EP0270750B1 (it)
JP (1) JPS63133399A (it)
KR (1) KR880004488A (it)
DE (1) DE3778845D1 (it)
IT (1) IT1213343B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221780B (it) * 1988-01-29 1990-07-12 Sgs Thomson Microelectronics Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
US5191552A (en) * 1988-06-24 1993-03-02 Kabushiki Kaisha Toshiba Semiconductor memory device with address transition actuated dummy cell
EP0576046B1 (en) * 1988-06-24 1996-03-27 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JPH0824000B2 (ja) * 1989-06-12 1996-03-06 株式会社東芝 半導体メモリ装置
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
EP0486743B1 (en) * 1990-11-19 1996-05-08 STMicroelectronics S.r.l. Improved sense circuit for storage devices such as non-volatile memories, with compensated offset current
FR2682505B1 (fr) * 1991-10-11 1996-09-27 Sgs Thomson Microelectronics Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif.
US5390147A (en) * 1994-03-02 1995-02-14 Atmel Corporation Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory
JP2009129472A (ja) * 2007-11-20 2009-06-11 Toshiba Corp 半導体記憶装置
WO2010082243A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 不揮発性半導体メモリ及びメモリシステム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices

Also Published As

Publication number Publication date
EP0270750A2 (en) 1988-06-15
IT8621682A0 (it) 1986-09-12
JPS63133399A (ja) 1988-06-06
KR880004488A (ko) 1988-06-04
EP0270750A3 (en) 1990-04-18
EP0270750B1 (en) 1992-05-06
DE3778845D1 (de) 1992-06-11

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929