IT1185964B - PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS - Google Patents

PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS

Info

Publication number: IT1185964B
Authority: IT; Italy
Prior art keywords: procedure; related equipment; ohmic metal; make ohmic; semiconductor contacts
Prior art date: 1985-10-01

Application number

IT22325/85A

Other languages

Italian (it)

Other versions

IT8522325A0 (en

Inventor

Giulio Iannuzzi

Original Assignee

Sgs Microelettronica Spa

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-10-01

Filing date

1985-10-01

Publication date

1987-11-18

1985-10-01 Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa

1985-10-01 Priority to IT22325/85A priority Critical patent/IT1185964B/en

1985-10-01 Publication of IT8522325A0 publication Critical patent/IT8522325A0/en

1986-08-19 Priority to GB8620131A priority patent/GB2181297B/en

1986-09-29 Priority to NL8602453A priority patent/NL8602453A/en

1986-09-30 Priority to JP61234265A priority patent/JPS6286716A/en

1986-09-30 Priority to FR8613608A priority patent/FR2588120A1/en

1986-10-01 Priority to DE19863633472 priority patent/DE3633472A1/en

1987-11-18 Application granted granted Critical

1987-11-18 Publication of IT1185964B publication Critical patent/IT1185964B/en

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Plasma & Fusion (AREA)
Electrodes Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

IT22325/85A 1985-10-01 1985-10-01 PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS IT1185964B (en)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
IT22325/85A IT1185964B (en)	1985-10-01	1985-10-01	PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS
GB8620131A GB2181297B (en)	1985-10-01	1986-08-19	Process and relative apparatus for making ohmic type contacts between metal and semiconductor
NL8602453A NL8602453A (en)	1985-10-01	1986-09-29	METHOD AND APPARATUS FOR MAKING CONTACTS OF THE OHMSE TYPE BETWEEN METAL AND SEMICONDUCTOR
JP61234265A JPS6286716A (en)	1985-10-01	1986-09-30	Formation of ohmic contact between metal and semiconductor and apparatus for the same
FR8613608A FR2588120A1 (en)	1985-10-01	1986-09-30	CORRESPONDING METHOD AND APPARATUS FOR ESTABLISHING OHMIC-TYPE CONTACTS BETWEEN A METAL AND A SEMICONDUCTOR
DE19863633472 DE3633472A1 (en)	1985-10-01	1986-10-01	METHOD AND DEVICE FOR PRODUCING OHMS CONTACTS BETWEEN METALS AND SEMICONDUCTORS

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT22325/85A IT1185964B (en)	1985-10-01	1985-10-01	PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS

Publications (2)

Publication Number	Publication Date
IT8522325A0 IT8522325A0 (en)	1985-10-01
IT1185964B true IT1185964B (en)	1987-11-18

Family

ID=11194694

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT22325/85A IT1185964B (en)	1985-10-01	1985-10-01	PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS

Country Status (6)

Country	Link
JP (1)	JPS6286716A (en)
DE (1)	DE3633472A1 (en)
FR (1)	FR2588120A1 (en)
GB (1)	GB2181297B (en)
IT (1)	IT1185964B (en)
NL (1)	NL8602453A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5043299B1 (en) *	1989-12-01	1997-02-25	Applied Materials Inc	Process for selective deposition of tungsten on semiconductor wafer
US5478780A (en) *	1990-03-30	1995-12-26	Siemens Aktiengesellschaft	Method and apparatus for producing conductive layers or structures for VLSI circuits
EP0448763A1 (en) *	1990-03-30	1991-10-02	Siemens Aktiengesellschaft	Process and apparatus for manufacturing conductive layers or structures for highly integrated circuits
DE69121451T2 (en) *	1990-04-16	1997-02-20	Applied Materials Inc	Method for producing a titanium silicide layer on a semiconductor layer
DE4339465C2 (en) *	1993-11-19	1997-05-28	Gold Star Electronics	Process for treating the surface of a silicon substrate exposed to dry etching

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1177382A (en) *	1966-02-24	1970-01-14	Rca Corp Formerly Known As Rad	Method of Making Ohmic Contact to a Semiconductor Body
BE758321A (en) *	1969-11-03	1971-04-01	Rca Corp	PROCESS FOR METALLIZING SEMICONDUCTOR DEVICES
CA965189A (en) *	1972-01-03	1975-03-25	Signetics Corporation	Semiconductor structure using platinel silicide as a schottky barrier diode and method
US4056642A (en) *	1976-05-14	1977-11-01	Data General Corporation	Method of fabricating metal-semiconductor interfaces
US4107835A (en) *	1977-02-11	1978-08-22	Bell Telephone Laboratories, Incorporated	Fabrication of semiconductive devices
DE3103615A1 (en) *	1981-02-03	1982-09-09	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR GENERATING EXTREME FINE STRUCTURES
JPS57157525A (en) *	1981-03-23	1982-09-29	Fujitsu Ltd	Surface treating method
JPS6077429A (en) *	1983-10-04	1985-05-02	Asahi Glass Co Ltd	Dry etching method
US4693777A (en) *	1984-11-30	1987-09-15	Kabushiki Kaisha Toshiba	Apparatus for producing semiconductor devices
US4824518A (en) *	1985-03-29	1989-04-25	Sharp Kabushiki Kaisha	Method for the production of semiconductor devices
US4605479A (en) *	1985-06-24	1986-08-12	Rca Corporation	In-situ cleaned ohmic contacts

1985
- 1985-10-01 IT IT22325/85A patent/IT1185964B/en active
1986
- 1986-08-19 GB GB8620131A patent/GB2181297B/en not_active Expired
- 1986-09-29 NL NL8602453A patent/NL8602453A/en not_active Application Discontinuation
- 1986-09-30 JP JP61234265A patent/JPS6286716A/en active Pending
- 1986-09-30 FR FR8613608A patent/FR2588120A1/en not_active Withdrawn
- 1986-10-01 DE DE19863633472 patent/DE3633472A1/en not_active Withdrawn

Also Published As

Publication number	Publication date
DE3633472A1 (en)	1987-04-02
NL8602453A (en)	1987-05-04
GB2181297B (en)	1989-06-07
FR2588120A1 (en)	1987-04-03
GB8620131D0 (en)	1986-10-01
GB2181297A (en)	1987-04-15
JPS6286716A (en)	1987-04-21
IT8522325A0 (en)	1985-10-01

Publication	Publication Date	Title
DE3788791D1 (en)	1994-02-24	Electrically conductive single-use earthing strap.
DK452187A (en)	1988-03-20	ELECTRICAL CONTACT DEVICE WITH CONTACT PROTECTION
DK316187D0 (en)	1987-06-22	ELECTRICAL TERMINAL
IT1200785B (en)	1989-01-27	IMPROVED PLASMA ATTACK PROCEDURE (RIE) TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS
DK446887D0 (en)	1987-08-26	ELECTRICAL CONTACT DEVICE WITH CONTACT PROTECTION
DK78186D0 (en)	1986-02-19	ELECTROCARDIOGRAPHICAL ELECTRODE
IT1164957B (en)	1987-04-22	CIRCUIT CONNECTION FOR PROTECTION AGAINST CURRENT FOR DIRECT CURRENT AND / OR ALTERNATING CURRENT
IT1203738B (en)	1989-02-23	THERMO-STABLE BILIRUBIN-CSSIDASE AND PROCEDURE TO PRODUCE IT
IT1185964B (en)	1987-11-18	PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS
DK32387A (en)	1987-03-20	POWER CURRENT TERMINAL
DK174886D0 (en)	1986-04-17	ELECTRICAL CONNECTION
DK163696C (en)	1992-08-17	CONTACTS WITH WORKING CONTACTS
IT1209700B (en)	1989-08-30	ELECTRIC CONNECTOR AND CLOSING ELEMENT.
ATA186986A (en)	1995-09-15	SWITCH DISCONNECTOR
DK174986D0 (en)	1986-04-17	ELECTRICAL CONNECTION
DK165205C (en)	1993-03-01	ELECTRICAL CONNECTOR AND ELECTRICAL TERMINAL
IT1201840B (en)	1989-02-02	METHOD-SEMICONDUCTOR OHMIC CONTACTS PROCEDURE
KR890700176A (en)	1989-03-10	Selective plating device and anode assembly used therein
IT1213394B (en)	1989-12-20	DEVICE TO SURVEILL LOSTATE OF SLIDING ELEMENTS.
DK399279A (en)	1980-03-30	SWITCHING OFF AND CURRENT PROTECTION TO AN INTERMEDIATE CONVERTER OR SELF-CONTROLLING INCH
KR870004405U (en)	1987-07-31	Terminal attachment structure
KR860011322U (en)	1986-10-02	Electric liabilities
KR870008156U (en)	1987-06-10	Small Electric Ripper (RIPPER)
BR8505684A (en)	1987-06-09	PLOW AND PLOW EQUIPMENT EQUIPMENT
PT7670U (en)	1987-11-17	FOGAREIRO-PORTATIL AND DISMANTLABLE GRILL

Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19971030