IT1149658B - Dispositivo a semiconduttori - Google Patents

Dispositivo a semiconduttori

Info

Publication number: IT1149658B
Authority: IT; Italy
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1981-02-20

Application number

IT19677/82A

Other languages

English (en)

Other versions

IT8219677A0 (it

Inventor

Shimizu Isao

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-02-20

Filing date

1982-02-16

Publication date

1986-12-03

1982-02-16 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1982-02-16 Publication of IT8219677A0 publication Critical patent/IT8219677A0/it

1986-12-03 Application granted granted Critical

1986-12-03 Publication of IT1149658B publication Critical patent/IT1149658B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

IT19677/82A 1981-02-20 1982-02-16 Dispositivo a semiconduttori IT1149658B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56023017A JPS57138174A (en)	1981-02-20	1981-02-20	Semiconductor device

Publications (2)

Publication Number	Publication Date
IT8219677A0 IT8219677A0 (it)	1982-02-16
IT1149658B true IT1149658B (it)	1986-12-03

Family

ID=12098714

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT19677/82A IT1149658B (it)	1981-02-20	1982-02-16	Dispositivo a semiconduttori

Country Status (7)

Country	Link
US (1)	US4500900A (it)
JP (1)	JPS57138174A (it)
DE (1)	DE3206060A1 (it)
GB (1)	GB2095471B (it)
HK (1)	HK44986A (it)
IT (1)	IT1149658B (it)
MY (1)	MY8600549A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1215230B (it) *	1985-01-08	1990-01-31	Ates Componenti Elettron	Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
US5298785A (en) *	1987-05-15	1994-03-29	Fuji Electric Co., Ltd.	Semiconductor device
FR2615326B1 (fr) *	1987-05-15	1990-08-31	Fuji Electric Co Ltd	Dispositif a semi-conducteurs du type multi-emetteur
DE3802821A1 (de) *	1988-01-30	1989-08-03	Bosch Gmbh Robert	Leistungstransistor
US5374844A (en) *	1993-03-25	1994-12-20	Micrel, Inc.	Bipolar transistor structure using ballast resistor
JP3253468B2 (ja) *	1994-12-05	2002-02-04	シャープ株式会社	半導体装置
SE521385C2 (sv) *	1997-04-04	2003-10-28	Ericsson Telefon Ab L M	Bipolär transistorstruktur
JP2006332117A (ja) *	2005-05-23	2006-12-07	Sharp Corp	トランジスタ構造および電子機器
US8008747B2 (en) *	2008-02-28	2011-08-30	Alpha & Omega Semiconductor, Ltd.	High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
US8946942B2 (en) *	2008-03-03	2015-02-03	Alpha And Omega Semiconductor Incorporated	Robust semiconductor power devices with design to protect transistor cells with slower switching speed
US8563387B2 (en) *	2010-09-22	2013-10-22	Infineon Technologies Ag	Transistor and method of manufacturing a transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3358197A (en) *	1963-05-22	1967-12-12	Itt	Semiconductor device
US3971060A (en) *	1974-07-12	1976-07-20	Texas Instruments Incorporated	TTL coupling transistor
US3988759A (en) *	1974-08-26	1976-10-26	Rca Corporation	Thermally balanced PN junction
JPS5619417Y2 (it) *	1976-03-19	1981-05-08
JPS5457963U (it) *	1977-09-29	1979-04-21
DE3017750C2 (de) *	1980-05-09	1985-03-07	Philips Patentverwaltung Gmbh, 2000 Hamburg	Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor

1981
- 1981-02-20 JP JP56023017A patent/JPS57138174A/ja active Granted
1982
- 1982-02-16 IT IT19677/82A patent/IT1149658B/it active
- 1982-02-16 GB GB8204512A patent/GB2095471B/en not_active Expired
- 1982-02-19 DE DE19823206060 patent/DE3206060A1/de not_active Withdrawn
- 1982-02-22 US US06/350,873 patent/US4500900A/en not_active Expired - Lifetime
1986
- 1986-06-19 HK HK449/86A patent/HK44986A/xx unknown
- 1986-12-30 MY MY549/86A patent/MY8600549A/xx unknown

Also Published As

Publication number	Publication date
IT8219677A0 (it)	1982-02-16
JPH049378B2 (it)	1992-02-20
JPS57138174A (en)	1982-08-26
US4500900A (en)	1985-02-19
DE3206060A1 (de)	1982-09-09
MY8600549A (en)	1986-12-31
HK44986A (en)	1986-06-27
GB2095471A (en)	1982-09-29
GB2095471B (en)	1985-08-21

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Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19950224