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IT1112275B - Condensatore perfezionato a circuito integrato - Google Patents

Condensatore perfezionato a circuito integrato

Info

Publication number
IT1112275B
IT1112275B IT25052/78A IT2505278A IT1112275B IT 1112275 B IT1112275 B IT 1112275B IT 25052/78 A IT25052/78 A IT 25052/78A IT 2505278 A IT2505278 A IT 2505278A IT 1112275 B IT1112275 B IT 1112275B
Authority
IT
Italy
Prior art keywords
perfected
condenser
integrated circuit
integrated
circuit
Prior art date
Application number
IT25052/78A
Other languages
English (en)
Other versions
IT7825052A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7825052A0 publication Critical patent/IT7825052A0/it
Application granted granted Critical
Publication of IT1112275B publication Critical patent/IT1112275B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/013Modifications for accelerating switching in bipolar transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/64Variable-capacitance diodes, e.g. varactors 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
IT25052/78A 1977-06-29 1978-06-28 Condensatore perfezionato a circuito integrato IT1112275B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,028 US4191899A (en) 1977-06-29 1977-06-29 Voltage variable integrated circuit capacitor and bootstrap driver circuit

Publications (2)

Publication Number Publication Date
IT7825052A0 IT7825052A0 (it) 1978-06-28
IT1112275B true IT1112275B (it) 1986-01-13

Family

ID=25205344

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25052/78A IT1112275B (it) 1977-06-29 1978-06-28 Condensatore perfezionato a circuito integrato

Country Status (5)

Country Link
US (1) US4191899A (it)
EP (1) EP0000169B1 (it)
JP (1) JPS5412577A (it)
DE (1) DE2861127D1 (it)
IT (1) IT1112275B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321490A (en) * 1979-04-30 1982-03-23 Fairchild Camera And Instrument Corporation Transistor logic output for reduced power consumption and increased speed during low to high transition
US4376252A (en) * 1980-08-25 1983-03-08 International Business Machines Corporation Bootstrapped driver circuit
US4516041A (en) * 1982-11-22 1985-05-07 Sony Corporation Voltage controlled variable capacitor
US4679215A (en) * 1985-12-06 1987-07-07 Sperry Corporation Exceedance counting integrating photo-diode array
US4752913A (en) * 1986-04-30 1988-06-21 International Business Machines Corporation Random access memory employing complementary transistor switch (CTS) memory cells
US4760282A (en) * 1986-11-13 1988-07-26 National Semiconductor Corporation High-speed, bootstrap driver circuit
US4791313A (en) * 1986-11-13 1988-12-13 Fairchild Semiconductor Corp. Bipolar transistor switching enhancement circuit
US5255240A (en) * 1991-06-13 1993-10-19 International Business Machines Corporation One stage word line decoder/driver with speed-up Darlington drive and adjustable pull down
US5680073A (en) * 1993-06-08 1997-10-21 Ramot University Authority For Applied Research & Industrial Development Ltd. Controlled semiconductor capacitors
JP2004241624A (ja) * 2003-02-06 2004-08-26 Mitsubishi Electric Corp 電圧制御発振回路
US7602228B2 (en) 2007-05-22 2009-10-13 Semisouth Laboratories, Inc. Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
DE102016216667A1 (de) * 2015-09-10 2017-03-16 Schaeffler Technologies AG & Co. KG Nockenwellenversteller
US10360958B2 (en) * 2017-06-08 2019-07-23 International Business Machines Corporation Dual power rail cascode driver

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764148A1 (de) * 1968-04-10 1971-05-19 Itt Ind Gmbh Deutsche Spannungsabhaengiger Kondensator,insbesondere fuer Festkoerperschaltungen
US3544862A (en) * 1968-09-20 1970-12-01 Westinghouse Electric Corp Integrated semiconductor and pn junction capacitor
FR2036530A5 (it) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Also Published As

Publication number Publication date
EP0000169B1 (de) 1981-10-07
DE2861127D1 (en) 1981-12-17
EP0000169A1 (de) 1979-01-10
IT7825052A0 (it) 1978-06-28
JPS5635028B2 (it) 1981-08-14
JPS5412577A (en) 1979-01-30
US4191899A (en) 1980-03-04

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