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IT1108268B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1108268B
IT1108268B IT69957/78A IT6995778A IT1108268B IT 1108268 B IT1108268 B IT 1108268B IT 69957/78 A IT69957/78 A IT 69957/78A IT 6995778 A IT6995778 A IT 6995778A IT 1108268 B IT1108268 B IT 1108268B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT69957/78A
Other languages
English (en)
Other versions
IT7869957A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7869957A0 publication Critical patent/IT7869957A0/it
Application granted granted Critical
Publication of IT1108268B publication Critical patent/IT1108268B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231Emitter or collector electrodes for bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177Base regions of bipolar transistors, e.g. BJTs or IGBTs
IT69957/78A 1977-12-28 1978-12-27 Dispositivo semiconduttore IT1108268B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/865,236 US4236164A (en) 1977-12-28 1977-12-28 Bipolar transistor stabilization structure

Publications (2)

Publication Number Publication Date
IT7869957A0 IT7869957A0 (it) 1978-12-27
IT1108268B true IT1108268B (it) 1985-12-02

Family

ID=25345018

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69957/78A IT1108268B (it) 1977-12-28 1978-12-27 Dispositivo semiconduttore

Country Status (9)

Country Link
US (1) US4236164A (it)
JP (1) JPS5497378A (it)
BE (1) BE873009A (it)
CA (1) CA1118533A (it)
DE (1) DE2855840A1 (it)
FR (1) FR2413790A1 (it)
GB (1) GB2011708B (it)
IT (1) IT1108268B (it)
NL (1) NL7812522A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPH0719838B2 (ja) * 1985-07-19 1995-03-06 松下電器産業株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3766449A (en) * 1972-03-27 1973-10-16 Ferranti Ltd Transistors
JPS509515A (it) * 1973-05-30 1975-01-31
JPS5116310B2 (it) * 1973-12-12 1976-05-22
DE2410092A1 (de) * 1974-03-02 1975-09-04 Licentia Gmbh Halbleiteranordnung
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
US4047220A (en) * 1975-12-24 1977-09-06 General Electric Company Bipolar transistor structure having low saturation resistance
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component

Also Published As

Publication number Publication date
FR2413790B1 (it) 1984-06-29
DE2855840A1 (de) 1979-08-16
FR2413790A1 (fr) 1979-07-27
IT7869957A0 (it) 1978-12-27
GB2011708A (en) 1979-07-11
GB2011708B (en) 1982-02-24
JPS5497378A (en) 1979-08-01
BE873009A (fr) 1979-04-17
US4236164A (en) 1980-11-25
CA1118533A (en) 1982-02-16
JPS6145863B2 (it) 1986-10-09
NL7812522A (nl) 1979-07-02

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