IT1090846B - Perfezionamento nei generatori ad effetto hall a circuito integrato - Google Patents

Perfezionamento nei generatori ad effetto hall a circuito integrato

Info

Publication number: IT1090846B
Authority: IT; Italy
Prior art keywords: improvement; integrated circuit; hall effect; effect generators; circuit hall
Prior art date: 1977-02-02

Application number

IT52372/77A

Other languages

English (en)

Inventor

Robert Thomas Bate

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-02-02

Filing date

1977-12-23

Publication date

1985-06-26

1977-12-23 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1985-06-26 Application granted granted Critical

1985-06-26 Publication of IT1090846B publication Critical patent/IT1090846B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

IT52372/77A 1977-02-02 1977-12-23 Perfezionamento nei generatori ad effetto hall a circuito integrato IT1090846B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/764,931 US4141026A (en)	1977-02-02	1977-02-02	Hall effect generator

Publications (1)

Publication Number	Publication Date
IT1090846B true IT1090846B (it)	1985-06-26

Family

ID=25072193

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT52372/77A IT1090846B (it)	1977-02-02	1977-12-23	Perfezionamento nei generatori ad effetto hall a circuito integrato

Country Status (4)

Country	Link
US (1)	US4141026A (it)
JP (1)	JPS53108396A (it)
DE (1)	DE2804373A1 (it)
IT (1)	IT1090846B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4163986A (en) *	1978-05-03	1979-08-07	International Business Machines Corporation	Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
DE3001772A1 (de) *	1980-01-18	1981-07-23	Siemens AG, 1000 Berlin und 8000 München	Halbleiterbauelement
DE3110107A1 (de) *	1981-03-16	1982-09-23	Mannesmann Rexroth GmbH, 8770 Lohr	Kraftmessverfahren und kraftmessvorrichtung zur steuerung des krafthebers eines ackerschleppers
EP0162165A3 (en) *	1983-06-10	1986-07-16	Texas Instruments Incorporated	A Hall effect device and method for fabricating such a device
US4578692A (en) *	1984-04-16	1986-03-25	Sprague Electric Company	Integrated circuit with stress isolated Hall element
CH668147A5 (de) *	1985-05-22	1988-11-30	Landis & Gyr Ag	Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CH669068A5 (de) *	1986-04-29	1989-02-15	Landis & Gyr Ag	Integrierbares hallelement.
US4908527A (en) *	1988-09-08	1990-03-13	Xolox Corporation	Hall-type transducing device
US5789915A (en) *	1989-02-17	1998-08-04	Nartron Corporation	Magnetic field energy responsive position sensing apparatus and method
US7205622B2 (en) *	2005-01-20	2007-04-17	Honeywell International Inc.	Vertical hall effect device
US9007060B2 (en)	2011-07-21	2015-04-14	Infineon Technologies Ag	Electronic device with ring-connected hall effect regions
US8988072B2 (en)	2011-07-21	2015-03-24	Infineon Technologies Ag	Vertical hall sensor with high electrical symmetry
US9103868B2 (en)	2011-09-15	2015-08-11	Infineon Technologies Ag	Vertical hall sensors
US9312472B2 (en)	2012-02-20	2016-04-12	Infineon Technologies Ag	Vertical hall device with electrical 180 degree symmetry
DE102012024062A1 (de) *	2012-12-10	2014-06-12	Micronas Gmbh	Magnetfeldsensor
US9252354B2 (en) *	2013-01-29	2016-02-02	Infineon Technologies Ag	Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5040994B2 (it) *	1971-09-30	1975-12-27
NL173335C (nl) *	1972-06-01	1984-01-02	Philips Nv	Hall-element.
JPS5145233B2 (it) *	1973-08-06	1976-12-02
JPS561789B2 (it) *	1974-04-26	1981-01-16
JPS5220317B2 (it) *	1974-12-25	1977-06-02
US3994010A (en) *	1975-03-27	1976-11-23	Honeywell Inc.	Hall effect elements
US3997909A (en) *	1975-05-14	1976-12-14	International Business Machines Corporation	High carrier velocity magnetic sensor
JPS51147191A (en) *	1975-06-12	1976-12-17	Asahi Chem Ind Co Ltd	Hall element and its method of manufacturing

1977
- 1977-02-02 US US05/764,931 patent/US4141026A/en not_active Expired - Lifetime
- 1977-12-23 IT IT52372/77A patent/IT1090846B/it active
- 1977-12-28 JP JP16091677A patent/JPS53108396A/ja active Granted
1978
- 1978-02-02 DE DE19782804373 patent/DE2804373A1/de active Granted

Also Published As

Publication number	Publication date
DE2804373A1 (de)	1978-08-03
JPS53108396A (en)	1978-09-21
JPS6228600B2 (it)	1987-06-22
DE2804373C2 (it)	1991-06-06
US4141026A (en)	1979-02-20

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Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19951010