IT1044690B - Dispositivo con due transistori a effetto di campo complementari - Google Patents
Dispositivo con due transistori a effetto di campo complementariInfo
- Publication number
- IT1044690B IT1044690B IT28824/75A IT2882475A IT1044690B IT 1044690 B IT1044690 B IT 1044690B IT 28824/75 A IT28824/75 A IT 28824/75A IT 2882475 A IT2882475 A IT 2882475A IT 1044690 B IT1044690 B IT 1044690B
- Authority
- IT
- Italy
- Prior art keywords
- effect transistors
- complementary field
- complementary
- field
- transistors
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742453376 DE2453376A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453319 DE2453319A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453421 DE2453421A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453395 DE2453395A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1044690B true IT1044690B (it) | 1980-04-21 |
Family
ID=27431908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28824/75A IT1044690B (it) | 1974-11-11 | 1975-10-30 | Dispositivo con due transistori a effetto di campo complementari |
Country Status (7)
Country | Link |
---|---|
US (1) | US4040082A (it) |
JP (1) | JPS5171073A (it) |
BE (1) | BE835428A (it) |
FR (1) | FR2290759A1 (it) |
GB (1) | GB1527095A (it) |
IT (1) | IT1044690B (it) |
NL (1) | NL7513192A (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52153630A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
DE2638086A1 (de) * | 1976-08-24 | 1978-03-02 | Siemens Ag | Integrierte stromversorgung |
US4320312A (en) * | 1978-10-02 | 1982-03-16 | Hewlett-Packard Company | Smaller memory cells and logic circuits |
JPS5950562A (ja) * | 1982-09-17 | 1984-03-23 | Toshiba Corp | 半導体装置 |
DE3751242T2 (de) * | 1986-01-24 | 1995-09-14 | Canon Kk | Photoelektrischer Wandler. |
GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
US5068756A (en) * | 1989-02-16 | 1991-11-26 | Texas Instruments Incorporated | Integrated circuit composed of group III-V compound field effect and bipolar semiconductors |
US7569873B2 (en) * | 2005-10-28 | 2009-08-04 | Dsm Solutions, Inc. | Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys |
US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
US7646233B2 (en) * | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US20080099796A1 (en) * | 2006-11-01 | 2008-05-01 | Vora Madhukar B | Device with patterned semiconductor electrode structure and method of manufacture |
US20080237657A1 (en) * | 2007-03-26 | 2008-10-02 | Dsm Solution, Inc. | Signaling circuit and method for integrated circuit devices and systems |
US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
US7727821B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Image sensing cell, device, method of operation, and method of manufacture |
US20090168508A1 (en) * | 2007-12-31 | 2009-07-02 | Dsm Solutions, Inc. | Static random access memory having cells with junction field effect and bipolar junction transistors |
US7710148B2 (en) * | 2008-06-02 | 2010-05-04 | Suvolta, Inc. | Programmable switch circuit and method, method of manufacture, and devices and systems including the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3461361A (en) * | 1966-02-24 | 1969-08-12 | Rca Corp | Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment |
US3514676A (en) * | 1967-10-25 | 1970-05-26 | North American Rockwell | Insulated gate complementary field effect transistors gate structure |
US3767984A (en) * | 1969-09-03 | 1973-10-23 | Nippon Electric Co | Schottky barrier type field effect transistor |
US3846766A (en) * | 1971-03-25 | 1974-11-05 | Tokyo Shibaura Electric Co | Associative memories including mos transistors |
JPS5431671B2 (it) * | 1973-03-14 | 1979-10-08 |
-
1975
- 1975-10-30 IT IT28824/75A patent/IT1044690B/it active
- 1975-11-05 FR FR7533820A patent/FR2290759A1/fr active Granted
- 1975-11-06 US US05/629,394 patent/US4040082A/en not_active Expired - Lifetime
- 1975-11-07 GB GB46154/75A patent/GB1527095A/en not_active Expired
- 1975-11-10 BE BE161739A patent/BE835428A/xx unknown
- 1975-11-11 JP JP50135599A patent/JPS5171073A/ja active Pending
- 1975-11-11 NL NL7513192A patent/NL7513192A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2290759B1 (it) | 1978-06-30 |
US4040082A (en) | 1977-08-02 |
FR2290759A1 (fr) | 1976-06-04 |
NL7513192A (nl) | 1976-05-13 |
GB1527095A (en) | 1978-10-04 |
BE835428A (fr) | 1976-03-01 |
JPS5171073A (en) | 1976-06-19 |
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