IT1032591B - Procedimento per la fabbricazione di dispostivi semiconduttori - Google Patents
Procedimento per la fabbricazione di dispostivi semiconduttoriInfo
- Publication number
- IT1032591B IT1032591B IT7567845A IT6784575A IT1032591B IT 1032591 B IT1032591 B IT 1032591B IT 7567845 A IT7567845 A IT 7567845A IT 6784575 A IT6784575 A IT 6784575A IT 1032591 B IT1032591 B IT 1032591B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacturing
- semiconductive devices
- semiconductive
- devices
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US484084A US3897627A (en) | 1974-06-28 | 1974-06-28 | Method for manufacturing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1032591B true IT1032591B (it) | 1979-06-20 |
Family
ID=23922675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7567845A IT1032591B (it) | 1974-06-28 | 1975-04-01 | Procedimento per la fabbricazione di dispostivi semiconduttori |
Country Status (7)
Country | Link |
---|---|
US (1) | US3897627A (it) |
JP (1) | JPS531630B2 (it) |
BE (1) | BE827022A (it) |
DE (1) | DE2511925A1 (it) |
FR (1) | FR2276692A1 (it) |
GB (1) | GB1476585A (it) |
IT (1) | IT1032591B (it) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
US4023258A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
US4080722A (en) * | 1976-03-22 | 1978-03-28 | Rca Corporation | Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink |
FR2420208A1 (fr) * | 1978-03-17 | 1979-10-12 | Thomson Csf | Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee |
US4237600A (en) * | 1978-11-16 | 1980-12-09 | Rca Corporation | Method for fabricating stacked semiconductor diodes for high power/low loss applications |
US4384400A (en) * | 1979-12-06 | 1983-05-24 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating monolithically interconnected series-parallel avalanche diodes |
US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
DE3211391A1 (de) * | 1982-03-27 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
US4498229A (en) * | 1982-10-04 | 1985-02-12 | Becton, Dickinson And Company | Piezoresistive transducer |
US4605919A (en) * | 1982-10-04 | 1986-08-12 | Becton, Dickinson And Company | Piezoresistive transducer |
DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR100287919B1 (ko) * | 1992-01-06 | 2001-05-02 | 사토 게니치로 | 더미 패턴을 갖는 반도체 칩 |
JP2836334B2 (ja) * | 1992-01-23 | 1998-12-14 | 三菱電機株式会社 | 高出力半導体装置の製造方法 |
US5580831A (en) * | 1993-07-28 | 1996-12-03 | Fujitsu Limited | Sawcut method of forming alignment marks on two faces of a substrate |
US5413659A (en) * | 1993-09-30 | 1995-05-09 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
US5882988A (en) * | 1995-08-16 | 1999-03-16 | Philips Electronics North America Corporation | Semiconductor chip-making without scribing |
JPH09172223A (ja) * | 1995-12-19 | 1997-06-30 | Sony Corp | 半導体装置と半導体装置の製造方法 |
DE19710375C2 (de) * | 1997-03-13 | 2002-11-07 | Micronas Semiconductor Holding | Verfahren zum Herstellen von räumlich strukturierten Bauteilen |
CN1860599A (zh) * | 2003-09-19 | 2006-11-08 | 霆激科技股份有限公司 | 半导体器件的制造 |
CN100452328C (zh) * | 2003-09-19 | 2009-01-14 | 霆激技术有限公司 | 半导体器件上导电金属层的制作 |
US8039363B2 (en) * | 2003-12-23 | 2011-10-18 | Tessera, Inc. | Small chips with fan-out leads |
US20050133891A1 (en) * | 2003-12-23 | 2005-06-23 | Tessera, Inc. | System and method for increasing the ball pitch of an electronic circuit package |
KR20070013273A (ko) * | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
KR20070028364A (ko) * | 2004-04-07 | 2007-03-12 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 발광 다이오드상의 반사층 제조 |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US7759201B2 (en) | 2007-12-17 | 2010-07-20 | Sandisk 3D Llc | Method for fabricating pitch-doubling pillar structures |
US7981592B2 (en) | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
US7713818B2 (en) | 2008-04-11 | 2010-05-11 | Sandisk 3D, Llc | Double patterning method |
US7786015B2 (en) | 2008-04-28 | 2010-08-31 | Sandisk 3D Llc | Method for fabricating self-aligned complementary pillar structures and wiring |
US8026178B2 (en) | 2010-01-12 | 2011-09-27 | Sandisk 3D Llc | Patterning method for high density pillar structures |
DE102012111358A1 (de) | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3820236A (en) * | 1969-06-20 | 1974-06-28 | Texas Instruments Inc | Method of making metal semiconductor diodes having plated heat sink members |
FR2100997B1 (it) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
US3720997A (en) * | 1971-01-11 | 1973-03-20 | Motorola Inc | Eutectic plating and breaking silicon wafers |
BE791930A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Dispositif electroluminescent et procede pour sa fabrication |
-
1974
- 1974-06-28 US US484084A patent/US3897627A/en not_active Expired - Lifetime
-
1975
- 1975-03-19 DE DE19752511925 patent/DE2511925A1/de active Pending
- 1975-03-20 FR FR7508687A patent/FR2276692A1/fr not_active Withdrawn
- 1975-03-21 GB GB1189575A patent/GB1476585A/en not_active Expired
- 1975-03-21 BE BE154625A patent/BE827022A/xx unknown
- 1975-03-24 JP JP3602175A patent/JPS531630B2/ja not_active Expired
- 1975-04-01 IT IT7567845A patent/IT1032591B/it active
Also Published As
Publication number | Publication date |
---|---|
US3897627A (en) | 1975-08-05 |
DE2511925A1 (de) | 1976-01-15 |
JPS50131459A (it) | 1975-10-17 |
BE827022A (fr) | 1975-07-16 |
GB1476585A (en) | 1977-06-16 |
JPS531630B2 (it) | 1978-01-20 |
FR2276692A1 (fr) | 1976-01-23 |
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