IT1025701B - Riduzione delle sollecitazioni instrutture algaas algaasp a stratimultipli - Google Patents

Riduzione delle sollecitazioni instrutture algaas algaasp a stratimultipli

Info

Publication number: IT1025701B
Authority: IT; Italy
Prior art keywords: stratimultipli; algaasp; algaas; reduction; algaasp stratimultipli
Prior art date: 1973-11-12

Application number

IT29253/74A

Other languages

English (en)

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-11-12

Filing date

1974-11-08

Publication date

1978-08-30

1974-11-08 Application filed by Western Electric Co filed Critical Western Electric Co

1978-08-30 Application granted granted Critical

1978-08-30 Publication of IT1025701B publication Critical patent/IT1025701B/it

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/066—Gp III-V liquid phase epitaxy
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Led Devices (AREA)

IT29253/74A 1973-11-12 1974-11-08 Riduzione delle sollecitazioni instrutture algaas algaasp a stratimultipli IT1025701B (it)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US41466473A	1973-11-12	1973-11-12
US05/463,871 US3958263A (en)	1973-11-12	1974-04-25	Stress reduction in algaas-algaasp multilayer structures

Publications (1)

Publication Number	Publication Date
IT1025701B true IT1025701B (it)	1978-08-30

Family

ID=27022651

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT29253/74A IT1025701B (it)	1973-11-12	1974-11-08	Riduzione delle sollecitazioni instrutture algaas algaasp a stratimultipli

Country Status (8)

Country	Link
US (1)	US3958263A (it)
JP (1)	JPS5818792B2 (it)
CA (1)	CA1040514A (it)
DE (1)	DE2453347C2 (it)
FR (1)	FR2251101B1 (it)
GB (1)	GB1492808A (it)
IT (1)	IT1025701B (it)
NL (1)	NL181830C (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4213805A (en) *	1973-05-28	1980-07-22	Hitachi, Ltd.	Liquid phase epitaxy method of forming a filimentary laser device
US4121177A (en) *	1973-05-28	1978-10-17	Hitachi, Ltd.	Semiconductor device and a method of fabricating the same
JPS52109884A (en) *	1976-03-11	1977-09-14	Nec Corp	Stripe type hetero junction semoonductor laser
US4032951A (en) *	1976-04-13	1977-06-28	Bell Telephone Laboratories, Incorporated	Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
US4037111A (en) *	1976-06-08	1977-07-19	Bell Telephone Laboratories, Incorporated	Mask structures for X-ray lithography
FR2435816A1 (fr) *	1978-09-08	1980-04-04	Radiotechnique Compelec	Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede
FR2447612A1 (fr) *	1979-01-26	1980-08-22	Thomson Csf	Composant semi-conducteur a heterojonction
US4372791A (en) *	1979-04-30	1983-02-08	Massachusetts Institute Of Technology	Method for fabricating DH lasers
US4319937A (en) *	1980-11-12	1982-03-16	University Of Illinois Foundation	Homogeneous liquid phase epitaxial growth of heterojunction materials
FR2502847A1 (fr) *	1981-03-25	1982-10-01	Western Electric Co	Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
US4678266A (en) *	1983-06-29	1987-07-07	Stauffer Chemical Company	Use of pnictide films for wave-guiding in opto-electronic devices
IL78840A0 (en) *	1985-10-17	1986-09-30	Holobeam	Lattice-graded epilayer
US5294808A (en) *	1992-10-23	1994-03-15	Cornell Research Foundation, Inc.	Pseudomorphic and dislocation free heteroepitaxial structures
JPH0766455A (ja) *	1993-08-24	1995-03-10	Shin Etsu Handotai Co Ltd	半導体発光装置
JPH10214993A (ja) *	1997-01-29	1998-08-11	Hitachi Cable Ltd	エピタキシャルウエハおよびその製造方法並びに発光ダイオード
US6327293B1 (en) *	1998-08-12	2001-12-04	Coherent, Inc.	Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6636538B1 (en) *	1999-03-29	2003-10-21	Cutting Edge Optronics, Inc.	Laser diode packaging
DE19918651A1 (de) *	1999-04-16	2000-10-19	Friedrich Schiller Uni Jena Bu	Lichtemittierende Halbleiterdiode und Verfahren zu ihrer Herstellung
US6524971B1 (en)	1999-12-17	2003-02-25	Agere Systems, Inc.	Method of deposition of films
US7305016B2 (en) *	2005-03-10	2007-12-04	Northrop Grumman Corporation	Laser diode package with an internal fluid cooling channel
US20070235839A1 (en) *	2005-08-24	2007-10-11	Nlight Photonics Corporation	Semiconductor devices utilizing AlGaAsP
US20070053396A1 (en) *	2005-08-24	2007-03-08	Nlight Photonics Corporation	Semiconductor lasers utilizing AlGaAsP
US7656915B2 (en) *	2006-07-26	2010-02-02	Northrop Grumman Space & Missions Systems Corp.	Microchannel cooler for high efficiency laser diode heat extraction
US20080056314A1 (en) *	2006-08-31	2008-03-06	Northrop Grumman Corporation	High-power laser-diode package system
JP2008140887A (ja) *	2006-11-30	2008-06-19	Mitsubishi Electric Corp	半導体レーザ
DE102007030062A1 (de) *	2007-06-29	2009-01-02	Osram Opto Semiconductors Gmbh	Monolithisch integrierter Laserdiodenchip mit einem Aufbau als Mehrfachstrahl-Laserdiode
US7724791B2 (en) *	2008-01-18	2010-05-25	Northrop Grumman Systems Corporation	Method of manufacturing laser diode packages and arrays
US8345720B2 (en) *	2009-07-28	2013-01-01	Northrop Grumman Systems Corp.	Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US9590388B2 (en)	2011-01-11	2017-03-07	Northrop Grumman Systems Corp.	Microchannel cooler for a single laser diode emitter based system
US8937976B2 (en)	2012-08-15	2015-01-20	Northrop Grumman Systems Corp.	Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
CN110190512A (zh) *	2019-05-31	2019-08-30	度亘激光技术（苏州）有限公司	DBR的制备方法及GaAs基VCSEL

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3812516A (en) *	1970-05-01	1974-05-21	Bell Telephone Labor Inc	Spontaneously emitting hetero-structure junction diodes
JPS5527474B2 (it) *	1971-12-17	1980-07-21
US3838359A (en) *	1973-11-23	1974-09-24	Bell Telephone Labor Inc	Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode

1974
- 1974-04-25 US US05/463,871 patent/US3958263A/en not_active Expired - Lifetime
- 1974-09-05 CA CA208,566A patent/CA1040514A/en not_active Expired
- 1974-11-08 IT IT29253/74A patent/IT1025701B/it active
- 1974-11-08 FR FR7437210A patent/FR2251101B1/fr not_active Expired
- 1974-11-11 DE DE2453347A patent/DE2453347C2/de not_active Expired
- 1974-11-11 NL NLAANVRAGE7414702,A patent/NL181830C/xx not_active IP Right Cessation
- 1974-11-12 JP JP49129615A patent/JPS5818792B2/ja not_active Expired
- 1974-11-12 GB GB48843/74A patent/GB1492808A/en not_active Expired

Also Published As

Publication number	Publication date
DE2453347A1 (de)	1975-05-15
NL7414702A (nl)	1975-05-14
JPS5081486A (it)	1975-07-02
FR2251101B1 (it)	1979-02-23
FR2251101A1 (it)	1975-06-06
JPS5818792B2 (ja)	1983-04-14
CA1040514A (en)	1978-10-17
GB1492808A (en)	1977-11-23
DE2453347C2 (de)	1984-06-20
NL181830C (nl)	1987-11-02
US3958263A (en)	1976-05-18
NL181830B (nl)	1987-06-01

Publication	Publication Date	Title
IT1025701B (it)	1978-08-30	Riduzione delle sollecitazioni instrutture algaas algaasp a stratimultipli
IT1015421B (it)	1977-05-10	Sedia a rotelle
IT1013244B (it)	1977-03-30	Sedia accatastabile
BE819533A (fr)	1975-03-04	Catalyseurs renfermant du chrome
SE381564B (sv)	1975-12-15	Eldriven rullstol
SE401011B (sv)	1978-04-17	Toalett
IT1007343B (it)	1976-10-30	Gabinetto
BE816128A (fr)	1974-12-10	Pnenothiazines fluoro-substituees
NO143359C (no)	1981-01-21	Magnetisk omformerhode.
SE403332B (sv)	1978-08-07	Likstromsomformare
BE823810A (fr)	1975-06-24	Agents anti-inflammatoires
BE817331A (fr)	1975-01-06	Hydr0deparaffinage catalytique
JPS5143166A (ja)	1976-04-13	Ryuryosensa
AT345985B (de)	1978-10-10	Waessrige shampoos
BE810394A (fr)	1974-05-16	Baignoire
IT1021070B (it)	1978-01-30	Miglioramenti su cerchi
AR202656A1 (es)	1975-06-30	Copoliamidas cuaternarias
NL7410130A (nl)	1975-02-19	Spoellichaamflens.
JPS514845A (ja)	1976-01-16	Shuyakutekisaibainotamenorentsu oyobi mokangenshonimotozuku yokinyoru kangaisochi
AT333014B (de)	1976-10-25	Doppelboden
SU470668A2 (ru)	1975-05-15	Разьемное соединение
TR18104A (tr)	1976-09-30	Suebstitue edilmis uerasil'ler
JPS5140181A (ja)	1976-04-03	Shokuhinyokichunogenatsudookenshutsusuruhoho oyobi sonosochi
BE816368A (fr)	1974-12-16	Structure gonflable
BE816589A (fr)	1974-10-16	Coffrage d'allege