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IN2015DN02030A - - Google Patents

Info

Publication number
IN2015DN02030A
IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
Authority
IN
India
Prior art keywords
wafer
discloses
group iii
iii nitride
present
Prior art date
Application number
Inventor
Tadao Hashimoto
Edward Letts
Sierra Hoff
Original Assignee
Sixpoint Materials Inc
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48050922&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN2015DN02030(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sixpoint Materials Inc, Seoul Semiconductor Co Ltd filed Critical Sixpoint Materials Inc
Publication of IN2015DN02030A publication Critical patent/IN2015DN02030A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H10P90/123—
    • H10P90/126—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention discloses a group III nitride wafer such as GaN AlN InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
IN2030DEN2015 2012-08-28 2013-03-15 IN2015DN02030A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261694119P 2012-08-28 2012-08-28
PCT/US2013/032006 WO2014035481A1 (en) 2012-08-28 2013-03-15 Group iii nitride wafer and its production method

Publications (1)

Publication Number Publication Date
IN2015DN02030A true IN2015DN02030A (en) 2015-08-14

Family

ID=48050922

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2030DEN2015 IN2015DN02030A (en) 2012-08-28 2013-03-15

Country Status (8)

Country Link
US (2) US8921231B2 (en)
EP (1) EP2890537A1 (en)
JP (1) JP6144347B2 (en)
KR (1) KR101895035B1 (en)
CN (1) CN104781057B (en)
IN (1) IN2015DN02030A (en)
TW (1) TWI621163B (en)
WO (1) WO2014035481A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US10161059B2 (en) * 2006-04-07 2018-12-25 Sixpoint Materials, Inc. Group III nitride bulk crystals and their fabrication method
IN2015DN02030A (en) 2012-08-28 2015-08-14 Sixpoint Materials Inc
JP6169704B2 (en) 2012-09-25 2017-07-26 シックスポイント マテリアルズ， インコーポレイテッド Method for growing group III nitride crystals
WO2014051684A1 (en) 2012-09-26 2014-04-03 Sixpoint Materials, Inc. Group iii nitride wafers and fabrication method and testing method
CN105917035B (en) 2014-01-17 2019-06-18 三菱化学株式会社 GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for producing semiconductor device
JP6292080B2 (en) * 2014-08-21 2018-03-14 三菱ケミカル株式会社 Nonpolar or semipolar GaN substrate
US10355115B2 (en) 2016-12-23 2019-07-16 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
CN106783579B (en) * 2016-12-29 2019-12-13 苏州纳维科技有限公司 Group III nitride substrate and preparation method thereof
JP2020535092A (en) 2017-09-26 2020-12-03 シックスポイント マテリアルズ， インコーポレイテッド Seed crystal and manufacturing method for the growth of gallium nitride bulk crystals in supercritical ammonia
CN108074834A (en) * 2018-01-08 2018-05-25 中国电子科技集团公司第四十六研究所 A Polarity Face Determination Method for Polar Irregular Wafers
KR102126186B1 (en) * 2018-06-27 2020-06-24 경희대학교 산학협력단 Method for manufacturing a gallium nitride substrate
TWI836391B (en) * 2022-03-29 2024-03-21 兆遠科技股份有限公司 Brittle-soft substrate and manufacturing method of brittle-soft substrate

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5984998A (en) 1997-11-14 1999-11-16 American Iron And Steel Institute Method and apparatus for off-gas composition sensing
KR20030024834A (en) * 2000-08-07 2003-03-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Method for processing a semiconductor wafer using double-side polishing
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces
PL219109B1 (en) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
IL161420A0 (en) * 2001-10-26 2004-09-27 Ammono Sp Zoo Substrate for epitaxy
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7022992B2 (en) 2002-01-17 2006-04-04 American Air Liquide, Inc. Method and apparatus for real-time monitoring of furnace flue gases
EP1590509B1 (en) 2002-12-11 2014-02-12 Ammono S.A. Process for obtaining bulk monocrystalline gallium-containing nitride
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
KR100541111B1 (en) 2004-06-25 2006-01-11 삼성전기주식회사 Multi-wavelength semiconductor laser manufacturing method
DE102004039076A1 (en) 2004-08-12 2006-02-23 Sms Demag Ag Non-contact exhaust gas measurement by means of FTIR spectroscopy on metallurgical aggregates
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4849296B2 (en) * 2005-04-11 2012-01-11 日立電線株式会社 GaN substrate
JP4792802B2 (en) * 2005-04-26 2011-10-12 住友電気工業株式会社 Surface treatment method of group III nitride crystal
US8709371B2 (en) 2005-07-08 2014-04-29 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
JP4696886B2 (en) * 2005-12-08 2011-06-08 日立電線株式会社 Method for manufacturing self-supporting gallium nitride single crystal substrate and method for manufacturing nitride semiconductor device
US20070138505A1 (en) 2005-12-12 2007-06-21 Kyma Technologies, Inc. Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
JP4803717B2 (en) 2005-12-13 2011-10-26 株式会社タカトリ Wire saw
US7878883B2 (en) * 2006-01-26 2011-02-01 Memc Electronics Materials, Inc. Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control
JP4930081B2 (en) * 2006-04-03 2012-05-09 住友電気工業株式会社 GaN crystal substrate
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
JP2009533303A (en) 2006-04-07 2009-09-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Growth of large surface area gallium nitride crystals.
CN101432471A (en) * 2006-04-28 2009-05-13 住友电气工业株式会社 Method for manufacturing gallium nitride crystal and gallium nitride wafer
JP5332168B2 (en) 2006-11-17 2013-11-06 住友電気工業株式会社 Method for producing group III nitride crystal
CN107059116B (en) 2007-01-17 2019-12-31 晶体公司 Defect reduction in seeded aluminum nitride crystal growth
CN100592539C (en) 2007-09-12 2010-02-24 泰谷光电科技股份有限公司 Method for manufacturing light emitting diode element
JP4395812B2 (en) * 2008-02-27 2010-01-13 住友電気工業株式会社 Nitride semiconductor wafer-processing method
EP2291551B1 (en) 2008-06-04 2018-04-25 SixPoint Materials, Inc. High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
TWI460322B (en) * 2008-06-04 2014-11-11 希波特公司 Method for producing a Group III nitride crystal having improved crystallinity from an initial Group III nitrided species by an ammonia thermal growth method
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
KR101624369B1 (en) 2008-06-20 2016-05-25 이네오스 유에스에이 엘엘씨 Methods for sequestering carbon dioxide into alcohols via gasification and fermentation
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US20100006082A1 (en) 2008-07-11 2010-01-14 Saint-Gobain Abrasives, Inc. Wire slicing system
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
JP2011530471A (en) 2008-08-07 2011-12-22 ソラア インコーポレーテッド Manufacturing method of gallium nitride bowl by large-scale ammonothermal method
US8148801B2 (en) * 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8680581B2 (en) * 2008-12-26 2014-03-25 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor and template substrate
JP2012516572A (en) 2009-01-30 2012-07-19 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション SEED LAYER AND SEED LAYER MANUFACTURING METHOD
WO2010113237A1 (en) 2009-04-03 2010-10-07 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
JP2011100860A (en) * 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd Ion-implanted group-iii nitride semiconductor substrate, bonding substrate for group-iii nitride semiconductor layer, and method for manufacturing group-iii nitride semiconductor device
JP5471387B2 (en) * 2009-12-09 2014-04-16 三菱化学株式会社 Group III nitride crystal semiconductor substrate manufacturing method and group III nitride crystal semiconductor substrate
JP5757068B2 (en) 2010-08-02 2015-07-29 住友電気工業株式会社 GaN crystal growth method
IN2015DN02030A (en) 2012-08-28 2015-08-14 Sixpoint Materials Inc
JP6169704B2 (en) 2012-09-25 2017-07-26 シックスポイント マテリアルズ， インコーポレイテッド Method for growing group III nitride crystals
WO2014051684A1 (en) 2012-09-26 2014-04-03 Sixpoint Materials, Inc. Group iii nitride wafers and fabrication method and testing method

Also Published As

Publication number Publication date
US20140061662A1 (en) 2014-03-06
TWI621163B (en) 2018-04-11
JP2015529626A (en) 2015-10-08
US20140065796A1 (en) 2014-03-06
TW201413807A (en) 2014-04-01
US9543393B2 (en) 2017-01-10
KR101895035B1 (en) 2018-09-04
JP6144347B2 (en) 2017-06-07
CN104781057B (en) 2018-04-24
EP2890537A1 (en) 2015-07-08
WO2014035481A1 (en) 2014-03-06
US8921231B2 (en) 2014-12-30
CN104781057A (en) 2015-07-15
KR20150088993A (en) 2015-08-04

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