IN162248B - - Google Patents
Info
- Publication number
- IN162248B IN162248B IN26/DEL/85A IN26DE1985A IN162248B IN 162248 B IN162248 B IN 162248B IN 26DE1985 A IN26DE1985 A IN 26DE1985A IN 162248 B IN162248 B IN 162248B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08402459A GB2153586B (en) | 1984-01-31 | 1984-01-31 | Gate turn-off thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN162248B true IN162248B (da) | 1988-04-23 |
Family
ID=10555788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN26/DEL/85A IN162248B (da) | 1984-01-31 | 1985-01-15 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0151019B1 (da) |
| JP (1) | JPH0646657B2 (da) |
| DE (1) | DE3574083D1 (da) |
| GB (1) | GB2153586B (da) |
| IN (1) | IN162248B (da) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62186563A (ja) * | 1986-02-12 | 1987-08-14 | Meidensha Electric Mfg Co Ltd | 自己消弧形半導体素子 |
| FR2638022B1 (fr) * | 1988-10-14 | 1992-08-28 | Sgs Thomson Microelectronics | Thyristor asymetrique a extinction par la gachette, muni de courts-circuits d'anode et presentant un courant de declenchement reduit |
| JP2764830B2 (ja) * | 1989-09-14 | 1998-06-11 | 株式会社日立製作所 | ゲートターンオフサイリスタ |
| DE4003387A1 (de) * | 1990-02-05 | 1991-08-08 | Eupec Gmbh & Co Kg | Gto-thyristor mit kurzschluessen |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356503A (en) * | 1978-06-14 | 1982-10-26 | General Electric Company | Latching transistor |
| JPS6019147B2 (ja) * | 1979-01-24 | 1985-05-14 | 株式会社日立製作所 | ゲ−ト・タ−ン・オフ・サイリスタ |
| JPS6043668B2 (ja) * | 1979-07-06 | 1985-09-30 | 株式会社日立製作所 | 半導体装置 |
| DE3000804A1 (de) * | 1980-01-11 | 1981-07-16 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer |
| JPS57153467A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Semiconductor device |
| JPS57201077A (en) * | 1981-06-05 | 1982-12-09 | Hitachi Ltd | Semiconductor switching device |
-
1984
- 1984-01-31 GB GB08402459A patent/GB2153586B/en not_active Expired
-
1985
- 1985-01-15 IN IN26/DEL/85A patent/IN162248B/en unknown
- 1985-01-29 DE DE8585300576T patent/DE3574083D1/de not_active Expired
- 1985-01-29 EP EP85300576A patent/EP0151019B1/en not_active Expired
- 1985-01-31 JP JP60015645A patent/JPH0646657B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0151019A2 (en) | 1985-08-07 |
| GB2153586A (en) | 1985-08-21 |
| JPS60182167A (ja) | 1985-09-17 |
| EP0151019B1 (en) | 1989-11-02 |
| JPH0646657B2 (ja) | 1994-06-15 |
| DE3574083D1 (en) | 1989-12-07 |
| GB8402459D0 (en) | 1984-03-07 |
| GB2153586B (en) | 1987-06-24 |
| EP0151019A3 (en) | 1986-11-20 |