IL49750A0 - Method and apparatus for centrifugally forming thin singlecrystal layers - Google Patents
Method and apparatus for centrifugally forming thin singlecrystal layersInfo
- Publication number
- IL49750A0 IL49750A0 IL49750A IL4975076A IL49750A0 IL 49750 A0 IL49750 A0 IL 49750A0 IL 49750 A IL49750 A IL 49750A IL 4975076 A IL4975076 A IL 4975076A IL 49750 A0 IL49750 A0 IL 49750A0
- Authority
- IL
- Israel
- Prior art keywords
- singlecrystal
- layers
- forming thin
- centrifugally forming
- centrifugally
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1212—The active layers comprising only Group IV materials consisting of germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59410775A | 1975-07-08 | 1975-07-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL49750A0 true IL49750A0 (en) | 1976-08-31 |
Family
ID=24377548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL49750A IL49750A0 (en) | 1975-07-08 | 1976-06-09 | Method and apparatus for centrifugally forming thin singlecrystal layers |
Country Status (6)
Country | Link |
---|---|
US (1) | US4101925A (xx) |
JP (1) | JPS528989A (xx) |
BR (1) | BR7604394A (xx) |
DE (1) | DE2626761A1 (xx) |
FR (1) | FR2317005A1 (xx) |
IL (1) | IL49750A0 (xx) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259365A (en) * | 1978-03-02 | 1981-03-31 | Wolfgang Ruppel | Method for creating a ferroelectric or pyroelectric body |
CH629034A5 (de) * | 1978-03-31 | 1982-03-31 | Ibm | Vorrichtung zum herstellen mehrschichtiger halbleiterelemente mittels fluessigphasen-epitaxie. |
DE2933976A1 (de) * | 1979-08-22 | 1981-03-26 | Georg Prof. Dr. 91094 Langensendelbach Müller | Verfahren zum herstellen von kristallen hoher kristallguete. |
AU562656B2 (en) * | 1981-04-30 | 1987-06-18 | Hoxan Corp. | Fabricating polycrystalline silicon wafers |
EP0066657A1 (en) * | 1981-06-09 | 1982-12-15 | Allen L. Kerlin | Apparatus and method of forming sheet of single crystal semiconductor material |
FR2516708A1 (fr) * | 1981-11-13 | 1983-05-20 | Comp Generale Electricite | Procede de fabrication de silicium polycristallin pour photopiles solaires |
US4482913A (en) * | 1982-02-24 | 1984-11-13 | Westinghouse Electric Corp. | Semiconductor device soldered to a graphite substrate |
US5932163A (en) | 1996-12-18 | 1999-08-03 | Ashley; Louis S. | Thin film cover and method of making same |
US6260387B1 (en) * | 1998-05-29 | 2001-07-17 | Eastman Kodak Company | Method for fabricating glass preforms for molding optical surfaces in glass elements |
US7195797B2 (en) * | 2000-07-10 | 2007-03-27 | Atomic Telecom | High throughput high-yield vacuum deposition system |
US7456630B2 (en) * | 2005-09-22 | 2008-11-25 | U Chicago Argonne Llc | NMR characterization of thin films |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1630045A (en) * | 1924-07-17 | 1927-05-24 | Smith Corp A O | Centrifugal casting of metals |
US1831310A (en) * | 1927-03-30 | 1931-11-10 | Lewis B Lindemuth | Centrifugal casting |
US2178163A (en) * | 1936-10-31 | 1939-10-31 | Arthur C Davidson | Method of and apparatus for centrifugally casting metals |
FR1587403A (xx) * | 1968-09-17 | 1970-03-20 | Lajoye Pierre | |
JPS4896461A (xx) * | 1972-03-24 | 1973-12-10 | ||
GB1423594A (en) * | 1972-03-24 | 1976-02-04 | Nippon Electric Co | Manufacture of semiconductor single crystals |
US3857436A (en) * | 1973-02-13 | 1974-12-31 | D Petrov | Method and apparatus for manufacturing monocrystalline articles |
US4052782A (en) * | 1974-09-03 | 1977-10-11 | Sensor Technology, Inc. | Tubular solar cell and method of making same |
US3984256A (en) * | 1975-04-25 | 1976-10-05 | Nasa | Photovoltaic cell array |
-
1976
- 1976-06-09 IL IL49750A patent/IL49750A0/xx unknown
- 1976-06-15 DE DE19762626761 patent/DE2626761A1/de active Pending
- 1976-07-06 BR BR7604394A patent/BR7604394A/pt unknown
- 1976-07-07 FR FR7620782A patent/FR2317005A1/fr not_active Withdrawn
- 1976-07-08 JP JP51081427A patent/JPS528989A/ja active Pending
-
1977
- 1977-04-15 US US05/787,750 patent/US4101925A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4101925A (en) | 1978-07-18 |
BR7604394A (pt) | 1978-01-17 |
DE2626761A1 (de) | 1977-01-27 |
FR2317005A1 (fr) | 1977-02-04 |
JPS528989A (en) | 1977-01-24 |
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