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IL49750A0 - Method and apparatus for centrifugally forming thin singlecrystal layers - Google Patents

Method and apparatus for centrifugally forming thin singlecrystal layers

Info

Publication number
IL49750A0
IL49750A0 IL49750A IL4975076A IL49750A0 IL 49750 A0 IL49750 A0 IL 49750A0 IL 49750 A IL49750 A IL 49750A IL 4975076 A IL4975076 A IL 4975076A IL 49750 A0 IL49750 A0 IL 49750A0
Authority
IL
Israel
Prior art keywords
singlecrystal
layers
forming thin
centrifugally forming
centrifugally
Prior art date
Application number
IL49750A
Other languages
English (en)
Original Assignee
Ict Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ict Inc filed Critical Ict Inc
Publication of IL49750A0 publication Critical patent/IL49750A0/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • H10F71/1212The active layers comprising only Group IV materials consisting of germanium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL49750A 1975-07-08 1976-06-09 Method and apparatus for centrifugally forming thin singlecrystal layers IL49750A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59410775A 1975-07-08 1975-07-08

Publications (1)

Publication Number Publication Date
IL49750A0 true IL49750A0 (en) 1976-08-31

Family

ID=24377548

Family Applications (1)

Application Number Title Priority Date Filing Date
IL49750A IL49750A0 (en) 1975-07-08 1976-06-09 Method and apparatus for centrifugally forming thin singlecrystal layers

Country Status (6)

Country Link
US (1) US4101925A (xx)
JP (1) JPS528989A (xx)
BR (1) BR7604394A (xx)
DE (1) DE2626761A1 (xx)
FR (1) FR2317005A1 (xx)
IL (1) IL49750A0 (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259365A (en) * 1978-03-02 1981-03-31 Wolfgang Ruppel Method for creating a ferroelectric or pyroelectric body
CH629034A5 (de) * 1978-03-31 1982-03-31 Ibm Vorrichtung zum herstellen mehrschichtiger halbleiterelemente mittels fluessigphasen-epitaxie.
DE2933976A1 (de) * 1979-08-22 1981-03-26 Georg Prof. Dr. 91094 Langensendelbach Müller Verfahren zum herstellen von kristallen hoher kristallguete.
AU562656B2 (en) * 1981-04-30 1987-06-18 Hoxan Corp. Fabricating polycrystalline silicon wafers
EP0066657A1 (en) * 1981-06-09 1982-12-15 Allen L. Kerlin Apparatus and method of forming sheet of single crystal semiconductor material
FR2516708A1 (fr) * 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
US5932163A (en) 1996-12-18 1999-08-03 Ashley; Louis S. Thin film cover and method of making same
US6260387B1 (en) * 1998-05-29 2001-07-17 Eastman Kodak Company Method for fabricating glass preforms for molding optical surfaces in glass elements
US7195797B2 (en) * 2000-07-10 2007-03-27 Atomic Telecom High throughput high-yield vacuum deposition system
US7456630B2 (en) * 2005-09-22 2008-11-25 U Chicago Argonne Llc NMR characterization of thin films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1630045A (en) * 1924-07-17 1927-05-24 Smith Corp A O Centrifugal casting of metals
US1831310A (en) * 1927-03-30 1931-11-10 Lewis B Lindemuth Centrifugal casting
US2178163A (en) * 1936-10-31 1939-10-31 Arthur C Davidson Method of and apparatus for centrifugally casting metals
FR1587403A (xx) * 1968-09-17 1970-03-20 Lajoye Pierre
JPS4896461A (xx) * 1972-03-24 1973-12-10
GB1423594A (en) * 1972-03-24 1976-02-04 Nippon Electric Co Manufacture of semiconductor single crystals
US3857436A (en) * 1973-02-13 1974-12-31 D Petrov Method and apparatus for manufacturing monocrystalline articles
US4052782A (en) * 1974-09-03 1977-10-11 Sensor Technology, Inc. Tubular solar cell and method of making same
US3984256A (en) * 1975-04-25 1976-10-05 Nasa Photovoltaic cell array

Also Published As

Publication number Publication date
US4101925A (en) 1978-07-18
BR7604394A (pt) 1978-01-17
DE2626761A1 (de) 1977-01-27
FR2317005A1 (fr) 1977-02-04
JPS528989A (en) 1977-01-24

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